WO2008108604A1

WO2008108604A1 - Apparatus and method of processing substrates

Info

Publication number: WO2008108604A1
Application number: PCT/KR2008/001326
Authority: WO
Inventors: Geun-Ho Kim; Jung-Hee Lee; Seon-Kyu Jeon; Hee-Se Lee; Kwan-Goo Rha; Seng-Hyun Chung
Original assignee: Sosul Co., Ltd.; Lam Research Corporation
Priority date: 2007-03-08
Filing date: 2008-03-07
Publication date: 2008-09-12
Also published as: TW200845268A; TWI438854B

Abstract

In an apparatus for treating substrates, a primary process chamber, a peripheral etching chamber and a rear etching chamber are arranged around a transfer chamber, and a primary process, a peripheral etching process and a rear etching process are performed under a vacuum state in a single system. The peripheral and the rear etching processes are performed in the same space without atmospheric exposure of the substrate. Accordingly, the process time of the primary process, the peripheral and the rear etching processes may be remarkably reduced, to thereby improve the manufacturing efficiency of a semiconductor device.

Description

APPARATUS AND METHOD OF PROCESSING SUBSTRATES

Technical Field

[1] Example embodiments of the present invention relate to an apparatus and a method of processing substrates, and more particularly, relate to an apparatus for performing a primary process on a substrate, a secondary process against the substrate and an inspection process on the substrate in the same system and a method of processing the substrate using the same. Background Art

[2] Generally, a manufacturing process for a semiconductor device needs deposition and etching processes that are repeatedly performed many times on a semiconductor device such as a wafer. However, when a thin layer is deposited onto the substrate, there is a problem in that an unnecessary layer is frequently formed on a peripheral portion and a rear surface of the substrate. Further, when the thin layer is etched off from the substrate for a patterning process, there is a problem in that various contaminants, such as particles, are absorbed onto the peripheral portion and the rear surface of the substrate. The peripheral portion of a substrate includes upper and lower edge portions of the substrate and a sidewall of the substrate and is widely known as a bevel portion of the substrate. A surface of the substrate on which the thin layer and a pattern structure are formed is referred to as a front surface, and a surface of the substrate opposite to the front surface is referred to as a rear surface. That is, an unnecessary thin layer is generally absorbed and/or deposited onto the peripheral portion of the substrate and the rear surface of the substrate.

[3] A manufacturing process for a semiconductor device necessarily requires at least one additional secondary process for improving process reliability and reducing process defects in a subsequent process. For example, when a pattern structure is formed on a substrate, a deposition process for forming a thin layer on the substrate and an etching process for patterning the thin layer are necessarily performed for the pattern structure. However, the etching process for removing the unnecessary layer from the substrate is preferred for reducing the processing defects and not necessarily required for the pattern structure. The etching process for removing the unnecessary layer from the substrate is referred to as a secondary process while the process for forming the pattern structure is referred to as a primary process.

[4] For that reason, a typical primary process for manufacturing a semiconductor device necessarily requires a secondary process for removing the unnecessary thin layer from the peripheral portion and the rear surface of the substrate after a primary process including the deposition process and the etching process on the substrate. The secondary process is performed in an additional apparatus after completion of the primary process. That is, when the deposition and/or the etching processes are completed on the substrate, the unnecessary thin layer is removed from the substrate in additional apparatuses, so that the primary process and the secondary process may be performed in different apparatuses that are separate from each other, respectively. Accordingly, the substrate that has undergone the primary process is necessarily exposed to the surroundings, particularly to the atmosphere for a transfer of the substrate from the apparatus for the primary process to the apparatus for the secondary process.

[5] In addition, there has not yet been suggested a process in which the unnecessary thin layer is removed from both the peripheral portion and the rear surface of the substrate in the same apparatus or system. Hereinafter, the unnecessary thin layer on the peripheral portion of the substrate is referred to as a peripheral unnecessary thin layer and the unnecessary thin layer on the rear surface of the substrate is referred to as a rear unnecessary thin layer, and the etching process for removing the peripheral unnecessary thin layer is referred to as a peripheral etching process and the etching process for removing the rear unnecessary thin layer is referred to as a rear etching process. Until now, the peripheral and the rear unnecessary thin layers have been removed from the substrate through a separating process in different chambers, respectively. That is, the peripheral etching process and the rear etching process are independently performed in respective apparatuses.

[6] Accordingly, the etching process for removing the unnecessary thin layers may require much time and cost because the peripheral and the rear etching processes are separately performed in different apparatuses, to thereby remarkably reduce processing efficiency for manufacturing a semiconductor device. Disclosure of Invention Technical Problem

[7] An example embodiment of the present invention provides an apparatus for performing a primary process, a secondary process and an inspection process in the same apparatus without exposure of the substrate to the surroundings.

[8] The present invention also provides a method of processing substrates using the above apparatus. Technical Solution

[9] According to an aspect of the present invention, there is provided an apparatus for processing substrates for manufacturing a semiconductor device. The apparatus may include a load-lock chamber holding a plurality of substrates, a primary process chamber for performing a primary process for manufacturing the semiconductor device, a secondary process chamber for performing an etching process against a peripheral portion of the substrate, and a transfer chamber adjacent to the load- lock chamber, the primary process chamber and the secondary process chamber, so that the substrate is transferred in the transfer chamber among the load-lock chamber, the primary process chamber and the secondary process chamber.

[10] In an example embodiment, the load- lock chamber, the primary process chamber and the secondary process chamber include a gate portion that makes contact with the transfer chamber, so that each inner space of the load- lock chamber, the primary process chamber and the secondary process chamber is connected to or separated from a transfer space of the transfer chamber.

[11] In an example embodiment, the secondary process chamber includes a stage supporting a rear surface of the substrate in such a manner that the peripheral portion of the substrate is exposed to the surroundings in the secondary process chamber, a shield unit adjacent to a front surface opposite to the rear surface of the substrate and covering a central portion of the front surface, so that the peripheral portion of the substrate is exposed to the surroundings, and a plasma generator for generating plasma around the peripheral portion of the substrate.

[12] In an example embodiment, a processing gas is supplied to the peripheral portion of the substrate that is not covered with the shield unit. A gas injector penetrating the shield unit is further installed on the apparatus and an inert gas is injected onto the central portion of the front surface of the substrate.

[13] In an example embodiment, the plasma generator includes a first electrode ring arranged along an edge portion of the stage, a second electrode ring arranged along an edge portion of the shield unit and a power source for applying electric power for generating the plasma. The power source applies a voltage to the first electrode ring or the second electrode ring for generating the plasma.

[14] In an example embodiment, the plasma generator further includes an antenna spaced apart from the peripheral portion of the substrate and on which electric power for generating the plasma is applied.

[15] In an example embodiment, the plasma generator includes an electrode ring arranged along an edge portion of the stage or of the shielding unit, and a power source for applying electric power for generating the plasma to the stage.

[16] In an example embodiment, the plasma generator includes an antenna spaced apart from the peripheral portion of the substrate and a power source for applying electric power to the antenna.

[17] According to still another aspect of the present invention, there is provided an apparatus for processing substrates for manufacturing a semiconductor device. The apparatus includes a load-lock chamber holding a plurality of substrates, a primary process chamber for performing a primary process for manufacturing the semiconductor device, a secondary process chamber for performing an etching process against a rear surface of the substrate, and a transfer chamber adjacent to the load-lock chamber, the primary process chamber and the secondary process chamber, so that the substrate is transferred in the transfer chamber among the load-lock chamber, the primary process chamber and the secondary process chamber.

[18] In an example embodiment, the load- lock chamber, the primary process chamber and the secondary process chamber include a gate portion that makes contact with the transfer chamber, so that each inner space of the load- lock chamber, the primary process chamber and the secondary process chamber is connected to or separated from a transfer space of the transfer chamber.

[19] In an example embodiment, the secondary process chamber includes a securing unit for securing the substrate in such a manner that the rear surface of the substrate is exposed to the surroundings in the secondary process chamber, a supply unit for supplying a process gas onto the rear surface of the substrate, and a plasma generator for generating plasma around the rear surface of the substrate.

[20] In an example embodiment, the secondary process chamber further includes a shield unit for shielding a front surface opposite to the rear surface of the substrate.

[21] In an example embodiment, the plasma generator includes an electrode spaced apart from the rear surface of the substrate and facing the rear surface of the substrate, and a power source for applying electric power to the electrode.

[22] In an example embodiment, a first gap distance between the electrode and the rear surface of the substrate is larger than a second gap distance between the shielding unit and the front surface of the substrate.

[23] In an example embodiment, a gas injector penetrating the shield unit is further installed on the apparatus, and thus an inert gas is injected onto the front surface of the substrate.

[24] According to further still another aspect of the present invention, there is provided an apparatus for processing substrates for manufacturing a semiconductor device. The apparatus includes a load-lock chamber holding a plurality of substrates, a primary process chamber for performing a primary process for manufacturing the semiconductor device, a first secondary process chamber for performing an etching process against a peripheral portion of the substrate, a second secondary process chamber for performing an etching process against a rear surface of the substrate, and a transfer chamber adjacent to the load-lock chamber, the primary process chamber, the first secondary process chamber and the second secondary process chamber, so that the substrate is transferred through the transfer chamber to/from the load-lock chamber, the primary process chamber and the first and second secondary process chambers. [25] In an example embodiment, the load-lock chamber, the primary process chamber and the secondary process chamber include a gate portion that makes contact with the transfer chamber, so that each inner space of the load- lock chamber, the primary process chamber and the secondary process chamber is connected to or separated from a transfer space of the transfer chamber.

[26] According to further still another aspect of the present invention, there is provided an apparatus for processing substrates for manufacturing a semiconductor device. The apparatus includes a first process chamber for performing an etching process against a peripheral portion of the substrate, a second process chamber for performing an etching process against a rear surface of the substrate, and a transfer chamber adjacent to the first and second process chambers, so that the substrate is transferred through the transfer chamber to/from the first and second process chambers.

[27] In an example embodiment, the apparatus further includes an inspection chamber adjacent to the transfer chamber, the substrate on which the etching process is completed being inspected in the inspection chamber.

[28] In an example embodiment, the transfer chamber further includes a transfer unit having a body and a blade rotationally connected to the body, so that the substrate is turned over by the blade.

[29] In an example embodiment, the first process chamber includes first and second peripheral etching modules in which first and second etching processes are simultaneously performed against the peripheral portions of first and second substrates, respectively, and first and second rear etching modules in which third and fourth etching processes are simultaneously performed against the rear surfaces of third and fourth substrates, respectively.

[30] In an example embodiment, the transfer chamber includes a first transfer unit for transferring the first and second substrates into the first and second peripheral etching modules, and a second transfer unit for transferring the third and fourth substrates into the first and second rear etching modules.

[31] In an example embodiment, the apparatus further includes a load- lock chamber holding a plurality of the substrates.

[32] In an example embodiment, the apparatus further includes a loader that is connected to the load-lock chamber and loads the substrate into the load-lock chamber from the exterior of the apparatus, and an alignment member that is connected to the loader and aligns the substrate.

[33] In an example embodiment, the apparatus further includes an inspection member for inspecting the substrate that is connected to the load-lock chamber.

[34] According to further still another aspect of the present invention, there is provided a method of processing substrates in the same single apparatus. A substrate is loaded into a transfer chamber from a load-lock chamber, and the substrate is transferred into a primary process chamber, to thereby perform a primary process for manufacturing the semiconductor device on the substrate. Then, the substrate is transferred into a first secondary process chamber through the transfer chamber, to thereby perform a first etching process against a peripheral portion of the substrate. The substrate is unloaded from the load-lock chamber into the first secondary process chamber through the transfer chamber.

[35] In an example embodiment, the substrate is aligned with respect to a guide line before loading the substrate into a transfer chamber.

[36] In an example embodiment, the peripheral portion of the substrate is further inspected for detecting the process defects and the contaminants after unloading the substrate into the load-lock chamber from the secondary process chamber.

[37] In an example embodiment, the substrate is further transferred into a second secondary process chamber through the transfer chamber, to thereby perform a second etching process against a rear surface of the substrate before or after the etching process.

[38] In an example embodiment, the primary process includes a deposition process for forming a thin layer on the substrate and an etching process for partially removing the thin layer from the substrate to thereby form a pattern structure on the substrate.

[39] According to further still another aspect of the present invention, there is provided a method of processing substrates in the same single apparatus. The substrate is loaded into a transfer chamber from a load-lock chamber, and the substrate is transferred into a primary process chamber, to thereby perform a primary process for manufacturing the semiconductor device on the substrate. The substrate is then transferred into a secondary process chamber through the transfer chamber, to thereby perform an etching process against a rear surface of the substrate. The substrate transferred into the load-lock chamber from the secondary process chamber through the transfer chamber.

[40] According to further still another aspect of the present invention, there is provided a method of processing substrates in the same single apparatus. A first etching process is performed against a peripheral portion of a substrate in a first etch module, and the substrate is transferred into a second etch module from the first etch module. Then, a second etching process is performed against a rear surface of the substrate in a second etch module.

[41] In an example embodiment, a plurality of the substrates is simultaneously etched in the first and second the etching processes, respectively.

[42] In an example embodiment, the substrate is turned over before the substrate is transferred into the second etch module, so that the rear surface of the substrate is directed upwards in the second etch module while the rear surface of the substrate is directed downwards in the first etch module.

[43] According to example embodiments of the present invention, a substrate may be transferred between a primary process chamber and a secondary process chamber without atmospheric exposure of the substrate. In addition, a peripheral etching process and a rear etching process may be performed in the same single apparatus, to thereby reduce the etching time of the peripheral and the rear etching processes and improve the manufacturing efficiency of a semiconductor device.

Advantageous Effects

[44] According to the example embodiments of the present invention, a primary process chamber and a secondary process chamber, such as a peripheral etching chamber or a rear etching chamber, are arranged around a transfer chamber, so that a substrate may be transferred between the primary process chamber and the secondary process chamber without atmospheric exposure of the substrate. In addition, the peripheral etching process and the rear etching process may be performed in the same single apparatus, to thereby reduce the etching time of the peripheral and the rear etching processes and improve the manufacturing efficiency of a semiconductor device. Brief Description of the Drawings

[45] The above and other features and advantages of the invention will become readily apparent by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein:

[46] FIG. 1 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a first example embodiment of the present invention;

[47] FIG. 2 is a cross-sectional view illustrating a primary process chamber of the apparatus shown in FIG. 1 ;

[48] FIG. 3 is a cross-sectional view illustrating a secondary process chamber of the apparatus shown in FIG. 1 ;

[49] FIG. 4 is a cross-sectional view illustrating an inspection chamber of the apparatus shown in FIG. 1 ;

[50] FIG. 5 is a view illustrating a modified structure of an apparatus for processing substrates for manufacturing a semiconductor device in a first example embodiment of the present invention;

[51] FIG. 6 is a cross-sectional view illustrating a modified primary process chamber of the apparatus shown in FIG. 5;

[52] FIG. 7 is a cross-sectional view illustrating a modified secondary process chamber of the apparatus shown in FIG. 5;

[53] FIG. 8 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a second example embodiment of the present invention;

[54] FIG. 9 is a cross-sectional view illustrating a secondary process chamber of the apparatus shown in FIG. 8;

[55] FIG. 10 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a third example embodiment of the present invention;

[56] FIG. 11 is a view illustrating a first modified structure of the apparatus for processing substrates shown in FIG. 10;

[57] FIG. 12 is a view illustrating a second modified structure of the apparatus for processing substrates shown in FIG. 10;

[58] FIG. 13 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a fourth example embodiment of the present invention;

[59] FIG. 14 is a cross-sectional view illustrating the secondary process chamber of the apparatus shown in FIG. 13;

[60] FIG. 15 is a cross-sectional view illustrating a modification of the secondary process chamber shown in FIG. 14; and

[61] FIG. 16 is a flowchart showing a method of performing the peripheral and rear etching processes in an example embodiment of the present invention. Best Mode for Carrying Out the Invention

[62] It should be understood that the example embodiments of the present invention described below may be modified in many different ways without departing from the inventive principles disclosed herein, and the scope of the present invention is therefore not limited to these particular following embodiments. Rather, these embodiments are provided so that this disclosure will be through and complete, and will fully convey the concept of the invention to those skilled in the art by way of example and not of limitation.

[63] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[64]

[65] Embodiment 1

[66] FIG. 1 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a first example embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating a primary process chamber of the apparatus shown in FIG. 1, and FIG. 3 is a cross-sectional view illustrating a secondary process chamber of the apparatus shown in FIG. 1. FIG. 4 is a cross- sectional view illustrating an inspection chamber of the apparatus shown in FIG. 1. FIG. 5 is a view illustrating a modified structure of an apparatus for processing substrates for manufacturing a semiconductor device in a first example embodiment of the present invention. FIG. 6 is a cross-sectional view illustrating a modified primary process chamber of the apparatus shown in FIG. 5, and FIG. 7 is a cross-sectional view illustrating a modified secondary process chamber of the apparatus shown in FIG. 5.

[67] Referring to FIGS. 1 to 7, an apparatus 900 for processing substrates in accordance with a first example embodiment of the present invention includes a transfer chamber 100, a load- lock chamber 200, a primary process chamber 300, a secondary process chamber 400 and an inspection chamber 500. In an example embodiment, the load- lock chamber 200, the primary process chamber 300, the secondary process chamber 400 and the inspection chamber 500 are arranged around the transfer chamber lOOand make contact with the transfer chamber 100. For example, the load- lock chamber 200, the primary process chamber 300, the secondary process chamber 400 and the inspection chamber 500 are maintained in a vacuum state, and the secondary process chamber includes an etching chamber for etching a peripheral portion of a substrate.

[68] The transfer chamber 100 is also maintained in a vacuum state, and a substrate 10 is transferred between the chambers around the transfer chamber 100 through the transfer chamber 100. That is, the transfer chamber 100 allows the substrate 10 to be transferred under the vacuum state. In detail, the substrate 10 is transferred from the load-lock chamber 200 to the primary process chamber 300 through the transfer chamber 100, and the processed substrate 10 is unloaded from the primary process chamber 300 and is loaded into the secondary process chamber 400 through the transfer chamber 100. In addition, the etched substrate 10 is unloaded from the secondary process chamber 400 and is loaded into the inspection chamber 500 through the transfer chamber 100. When an inspection process is completed in the inspection chamber 500, the substrate 10 is unloaded from the inspection chamber 500 and is loaded into the load-lock chamber 200. In an example embodiment, the transfer chamber 100 includes a transfer unit 110 for transferring the substrate 10 and a vacuum controller (not shown) for controlling the vacuum state thereof. For example, the transfer unit 110 may include a robot arm. When the robot arm is used as the transfer unit 110 for transferring the substrate 10, the substrate 10 may not be aligned at an upper portion of the robot arm. An alignment member (not shown) may be installed on the transfer chamber 100 to thereby compensate for misalignment of the substrate 10. In an example embodiment, the transfer chamber 100 includes a plurality of transfer units 110 as shown in FIG. 5, to thereby increase the efficiency of processing the substrate 10. For example, when a primary process such as a deposition process or an etching process is performed on a first substrate in the primary process chamber 300, a second substrate may be transferred into the load-lock chamber200. Further, first and second substrates may be simultaneously transferred into the primary process chamber 300 and the secondary process chamber 400 by a plurality of the transfer units 110.

[69] In an example embodiment, the load-lock chamber 200, the primary process chamber

300, the secondary process chamber 400 and the inspection chamber 500 are connected to the transfer chamber 100. Particularly, each of the load-lock chamber 200, the primary process chamber 300, the secondary process chamber400 and the inspection chamber 500 includes a gate portion that makes contact with the transfer chamber 100. Each of the gate portions includes first to fourth gate valves 201, 301, 401 and 501. For example, the transfer chamber 100 is configured to have a rectangular shape shown in FIG. 1, and the gate valves 201, 301, 401 and 501 are positioned at each sidewall of the transfer chamber 100. Therefore, the load- lock chamber 200, the primary process chamber 300, the secondary process chamber 400 and the inspection chamber 500 are connected to the transfer chamber 100 at each sidewall thereof through the gate valves, respectively. Accordingly, the load-lock chamber200, the primary process chamber 300, the secondary process chamber 400 and the inspection chamber 500 are arranged around the transfer chamber 100, and thus the primary process such as a deposition process and an etching process, the secondary process such as an etching process against the peripheral portion of the substrate and removal of particles and an inspection process are simultaneously performed under the vacuum state. As a modification of the apparatus shown in FIG. 1, the inspection chamber 500 may be separate from the transfer chamber 100, as shown in FIG. 5. Particularly, the load-lock chamber 200, the primary process chamber 300 and the secondary process chamber 400 are arranged around the transfer chamber 100, and the inspection chamber 500 may be separate from the transfer chamber 100 and be positioned adjacent to the load-lock chamber 100. Accordingly, the substrates on which the primary process and the secondary process are performed are transferred to the inspection chamber 500 through the load- lock chamber 200. In an example embodiment, a plurality of the primary process chambers 300, the load-lock chambers 200 and the secondary process chambers may be arranged around the transfer chamber 100.

[70] The substrates 10 are loaded into the load-lock chamber 200 from the exterior of the apparatus 900 under atmospheric pressure, and the processed substrates 10 are unloaded to the exterior of the apparatus 900 from the load-lock chamber 200. For example, the load-lock chamber 200 may include a holding unit (not shown) for holding the substrates 10 and a pressure controller (not shown) for controlling an inner pressure thereof. The load-lock chamber 200 may further include an alignment member (not shown) for aligning the substrates 10. The load-lock chamber 200 is connected to the transfer chamber 100 through the first gate valve 201. The load-lock chamber 100 may be divided into an input chamber 200a and an output chamber 200b, as shown in FIG. 5. In such a case, a bare substrate that is to be processed in the apparatus 900 is placed on standby in the input chamber 200a, and is transferred to the primary process chamber 300 through the transfer chamber 100. In contrast, the processed substrate is unloaded from the secondary process chamber 400 or from the inspection chamber 500, and is placed on standby in the output chamber 200b. Accordingly, the bare substrate and the processed substrate are kept separate from each other, to thereby prevent substrate contamination and to reduce cost and time for processing the substrates in the apparatus 900.

[71] The bare substrate in the load- lock chamber 200 is transferred into the primary process chamber 300, and the primary process is performed on the bare substrate. In an example embodiment, the primary process may include a deposition process for forming a thin layer on the substrate 10 and an etching process for patterning the thin layer to thereby form a pattern structure on the substrate 10.

[72] FIG. 2 illustrates the primary process chamber 300 in which the deposition process is performed. In an example embodiment, the process chamber 300 includes the second gate valve 301 connected to the transfer chamber 100, a support 310 for supporting the substrate 10, a gas injector 320 for injecting a process gas onto the substrate 10, a temperature controller (not shown) for controlling an inner temperature of the process chamber 300 and a discharger330 for discharging residual gases and byproducts from the process chamber 300. In an example embodiment, the gas injector 320 may be connected to a gas supply unit 340 for supplying the process gas. A plasma generator (not shown) may be positioned inside of the process chamber 300.

[73] In an example embodiment, the support 310 may include an electrostatic chuck.

While the present example embodiment discloses the electrostatic chuck as the support 310, any other configuration for supporting the substrates may be used in the process chamber 300 in place of the support 310, as would be known to one of ordinary skill in the art. A plurality of the substrates 10 may be positioned on the support 310 as well as a single substrate 10. In addition, a heater or a cooler 311 may be installed in the support 310, to thereby easily control a substrate temperature. The gas injector 320 may include a shower head, and the process gas may include various source gases for forming various thin layers such as an insulation layer, a semiconductor layer and a metal layer. The gas injector 320 and the plasma generator may be formed into one body. For example, a portion of the gas injector 320 may be used as an electrode for generating the plasma.

[74] In addition, the primary process chamber 300 may include an etching chamber for etching the substrate 10 or patterning the thin layer on the substrate 10, as shown in FIG. 6. [75] Referring to FIG. 6, the process chamber 300 for the etching process may include the second gate valve 301 connected to the transfer chamber 100, a support 350 for supporting the substrate 10, a gas injector 320 for injecting a process gas onto the substrate 10, an upper electrode 360 for generating plasma, a plasma power source 370 for applying electric power to the upper electrode 360 and a bias power source 380 for applying bias power to the support 350. The process chamber 300 may further include a discharger 330 for discharging residual gases and byproducts from an inside of the process chamber 300. In an example embodiment, a gas supply unit 340 for supplying the process gas is connected to the upper electrode 360.

[76] The support 350 may include a chuck 351 for supporting the substrate 10 and an edge ring 352 arranged along an upper edge portion of the chuck 351. The upper electrode 350 is shaped into a circular disk including a plurality of penetrating holes, and is positioned below the gas injector 320. While the present example embodiment discloses that the upper electrode 360 is positioned below the gas injector, the upper electrode 360 may be positioned on or in the gas injector 320, as would be known to one of ordinary skill in the art. The upper electrode 360 is also electrically connected to the plasma power source 370, and thus the electric power is applied to the upper electrode 360 by the plasma power source 370 to thereby generate plasma in the process chamber 300. In the present example embodiment, the process gas includes an etching gas for etching the substrate 10 or a thin layer on the substrate 10. The support 350 is electrically connected to the bias power source 380, and thus the bias power is applied to the support 350.

[77] In an example embodiment, the primary process chamber 300 may include a capa- citively coupled plasma (CCP) chamber, an inductively coupled plasma (ICP) chamber, an electron cyclotron resonance plasma (ECRP) chamber and a surface wave plasma (SWP) chamber.

[78] In addition, when an etching process is performed in the primary process chamber

300, the process chamber 300 may further include an ashing chamber or a cleaning chamber for removing a photoresist layer, a hard mask layer and particles on the central portion of the substrate 10.

[79] While the present example embodiment discloses that the primary process chamber

300 includes a deposition chamber and an etching chamber, any other process chamber for manufacturing a semiconductor device known to one of ordinary skill in the art may also be used as the primary process chamber 300.

[80] When the primary process is completed on the substrate 10 in the primary process chamber 300, the substrate 10 is transferred into the secondary process chamber 400, and thus an unnecessary layer and particles may be removed from a peripheral portion of the substrate 10. Therefore, the substrate 10 and the pattern structure on a central portion of the substrate 10 may be prevented from being damaged by the unnecessary layer and the particles of the peripheral portion of the substrate 10. The central portion of the substrate 10 indicates a residual portion of the substrate 10 excluding the peripheral portion or the bevel portion of the substrate 10. In general, the pattern structure of a semiconductor device is positioned on a front surface of the central portion of the substrate 10.

[81] As shown in FIG. 3, the secondary process chamber 400 may include a stage 410 on which the substrate 10 is positioned, a shield unit 420 positioned over the central portion of the substrate 10 such that the central portion of the substrate 10 is covered with the shield unit 420 and thus the process gas is guided to the peripheral portion of the substrate 10, and a plasma generator 430 for generating the plasma. In an example embodiment, the plasma generator430 includes a lower electrode ring 431 arranged along an edge portion of the stage 410, an upper electrode ring 433 arranged along an edge portion of the shield unit 420 and a plasma power source 435 for applying electric power to the lower electrode ring 431. The secondary process chamber 400 may further include a gas supply unit 440 for supplying the process gases to the shield unit 420 and a discharger 450 for discharging residual process gases and byproducts from the process chamber 400. The stage 410 and the shield unit 420 include a protrusion having substantially the same shape as the substrate 10 and a size smaller than that of the substrate 10. The stage 410 and/or the shield unit 420 may move upwards and downwards, to thereby control a gap distance between the stage 410 and the shield unit 420. For example, when the substrate 10 is positioned on the protrusion of the stage 410 and the shield unit 420 is positioned in such manner that the protrusion thereof is adjacent to the substrate 10, the central portion of the substrate 10 is covered by the protrusions of the stage 410 and the shield unit 420 and the peripheral portion of the substrate 10 is exposed to the surroundings in the process chamber 400. In the present example embodiment, the exposed peripheral portion of the substrate 10 is in range of about 0.1 mm to about 5 mm from a sidewall of the substrate 10.

[82] The lower electrode ring 431 is arranged around the protrusion of the stage 410, and the upper electrode ring 433 is arranged around the protrusion of the shield unit 420. Accordingly, the upper electrode ring 433 is positioned over the peripheral portion of the substrate 10, and the lower electrode ring 431 is positioned under the peripheral portion of the substrate 10. A first gap distance between the lower and the upper electrode rings 431 and 433 is larger than a second gap distance between the protrusions of the stage 410 and the shield unit 420. For example, the lower and upper electrode rings 431 and 433 are sufficiently spaced apart from each other for generating the plasma, so that the plasma is intensively generated around the peripheral portion of the substrate 10. A plurality of injection holes 421 is arranged between the protrusion of the shield unit 420 and the upper electrode ring 433, so that the process gases are injected onto the peripheral portion of the substrate 10.

[83] The lower electrode ring 431 is connected to the plasma power source 435, and thus the plasma power is applied to the lower electrode ring 431, while the upper electrode ring 433 is electrically grounded. The plasma power may be applied to the upper electrode ring 433, while the lower electrode ring 431 is electrically grounded, as would be known to one of ordinary skill in the art. As a result, when the plasma power is applied to the lower electrode ring 431 and the process gases are injected onto the peripheral portion of the substrate 10, the process gases are transformed into plasma in the space between the upper and lower electrode rings 433 and 431. the plasma is chemically reacted to the unnecessary layer and particles of the peripheral portion of the substrate 10, to thereby etch the unnecessary layer and particles off from the substrate 10.

[84] The secondary process chamber may be modified to a configuration shown in FIG. 7.

The modified secondary process chamber 400 may include a stage 410 supporting the central portion of the substrate 10 such that the peripheral portion of the substrate 10 is not covered by the stage 410, a shielding unit 420 over the central portion of the substrate 10 such that the central portion of the substrate 10 is covered with the shielding unit 420 and the peripheral portion of the substrate 10 is open, an upper and a lower electrode 450 and 460 positioned over and under the peripheral portion of the substrate 10, an antenna 470 adjacent to and spaced apart from the peripheral portion of the substrate 10 in the process chamber 400, and a sealing member 480 for isolating the antenna 470 from the surroundings in the process chamber 400. The modified secondary process chamber 400 may further include a gas supply unit 440 for supplying the process gasses to the peripheral portion of the substrate 10 through the shield unit 420 and a plasma power source 490 for applying electric power to the antenna 470. In such a configuration, high frequency voltage for generating the plasma is applied to the antenna 470, and the upper and lower electrodes 450 and 460 are electrically grounded while bias power is applied to the stage 410. The upper electrode 450 is arranged around the shield unit 420 and the lower electrode 460 is arranged around the stage 410. An insulation layer 461 is interposed between the stage 410 and the lower electrode 460, because the electric power of the lower electrode 460 is different from that of the stage 410. One of the lower and the upper electrodes 460 and 450 may be omitted in accordance with process environments. Further, the secondary process chamber 400 may include an upper body 402 and a lower body 403. The sealing member 480 may include a circular ring extended from the lower body 403 to the upper body 402, so that an inner area of the sealing member 480 is separate from an outer area thereof in a view of a space in the modified process chamber 400. [85] The secondary process chamber 400 for etching the peripheral portion of the substrate 10 or cleaning the substrate 10 may have various configurations and shapes in accordance with the plasma generation process.

[86] In an example embodiment, the inspection chamber 500 inspects primary process defects of the substrate 10 undergoing the primary process in the primary process chamber 300, or secondary process defects of the substrate 10 undergoing the secondary process in the secondary process chamber 400. In an example embodiment, the inspection chamber 500 may include a support 510 for supporting the central portion of the substrate 10 such that the peripheral portion of the substrate 10 is not covered by the stage 510, and an inspection tool 520 for inspecting the front surface of the substrate 10. For example, the support 510 is configured to be a flat plane or a protruding pin. The inspection tool 520 may include a camera unit and an analysis unit and be positioned over and/or under the substrate 10. In the present example embodiment, the inspection tool 520 may be positioned over the substrate 10 and may move around the substrate 10 and rotate with respect to an axis thereof, so that every area of the substrate 10 may be scrupulously inspected by the inspection tool 520. The camera unit may include a first camera for inspecting crack defects on the substrate 10 and a second camera for detecting a size of the peripheral portion of the substrate 10. The first camera may take a picture of the substrate 10 and transmit the picture to a computer system (not shown) as a digital image. The computer system determines whether or not the crack defects are detected by the digital image. The second camera may take a picture of the peripheral portion of the substrate 10, and transmit the picture to a computer system. When the peripheral etching process is performed on the substrate 10, an etching line is formed between the central portion and the peripheral portion of the substrate 10. The computer system determines a peripheral distance from the etching line to an end of the substrate 10.

[87] Hereinafter, a method of processing the substrates is disclosed in detail using the above apparatus shown in FIGS. 1 to 7 including the transfer chamber 100, the load- lock chamber 200, the primary process chamber 300, the secondary process chamber 400 and the inspection chamber 500.

[88] The substrate 10 is loaded into the load-lock chamber 200 from the exterior of the apparatus 900 under atmospheric pressure. The load-lock chamber 200 of the apparatus 900 is under the atmospheric pressure, and the other chambers of the apparatus 900 are maintained in a vacuum state. Then, an inner pressure of the load-lock chamber 200 is decreased to substantially the same pressure as the transfer chamber 100. The transfer unit 110 transfers the substrate 10 from the load- lock chamber 200 into the transfer chamber 200, and then the substrate 10 is transferred onto the support 310 of the primary process chamber 300 from the transfer chamber 200. The primary process is performed on the substrate 10 in the primary process chamber 300. The primary process may include a deposition process for forming a thin layer on the substrate 10, an etching process against the substrate 10 or against the thin layer on the substrate 10. Thereafter, the substrate 10 is transferred back into the transfer chamber 200 from the primary process chamber 300, and is again transferred to the secondary process chamber 400 from the transfer chamber 200. The particles and unnecessary layer may be removed from the peripheral portion of the substrate 10 by the peripheral etching process in the secondary process chamber 400. Then, the substrate 10 is transferred back into the transfer chamber 200 from the secondary process chamber 400. Then, the substrate 10 is again transferred into the inspection chamber 500 from the transfer chamber 200. The substrate 10 is inspected by the inspection tool 520 whether or not the process defects and the particles are positioned on the central and the peripheral portions of the substrate 10, respectively. Then, the substrate 10 is transferred back into the transfer chamber 100 from the inspection chamber 500, and then is stacked backwards into the load- lock chamber 200. Then, the substrate 10 is finally unloaded to the exterior of the apparatus 900 from the load-lock chamber 200.

[89] In an example embodiment, the transfer chamber 100, the primary process chamber

300, the secondary process chamber 400 and the inspection chamber 500 are under a similar pressure, and more particularly, the same vacuum state. According to the first example embodiment of the present invention, the primary process such as the deposition and etching process, the secondary process such as the peripheral etching process against the substrate and the inspection process on the substrate may be performed in a single apparatus, to thereby prevent atmospheric exposure and contamination of the substrate.

[90] While the above example embodiments disclose that the deposition/etching process and the peripheral etching process may be performed in a single apparatus, the deposition/etching process and any other secondary process such as a rear etching process known to one of ordinary skill in the art may also be performed in a single apparatus. Hereinafter, an apparatus and a method of performing the deposition/etching process and the rear etching process are disclosed in detail as a second example embodiment of the present invention. In the following descriptions, the same reference numerals denote the same elements in the first example embodiment of the present invention, and thus detailed descriptions of the same elements will be omitted.

[91]

[92] Embodiment 2

[93] FIG. 8 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a second example embodiment of the present invention. FIG. 9 is a cross-sectional view illustrating a secondary process chamber of the apparatus shown in FIG. 8.

[94] Referring to FIGS. 8 and 9, the apparatus 1000 for processing substrates in accordance with a second example embodiment of the present invention includes a transfer chamber 100, a load- lock chamber 200, a primary process chamber 300, a secondary process chamber 600 and an inspection chamber 500. In an example embodiment, an etching process for removing contaminants and/or particles from a rear surface of the substrate 10 may be performed in the secondary process chamber 600.

[95] For example, a thin layer may be formed on the substrate 10 and the thin layer may be etched off to thereby form a pattern structure on the substrate 10 in the primary process chamber 300, and the unnecessary layer and particles are etched off from the rear surface of the substrate 10 in the secondary process chamber 600.

[96] When the thin layer is formed on the substrate 10 in the primary process chamber

300, the process gases are usually permeated into the space between the substrate 10 and the support 310, to thereby form the unnecessary layer on the rear surface of the substrate 10. The unnecessary layer on the rear surface of the substrate 10 causes a bending and/or a distortion of the substrate 10 in a subsequent process. The second example embodiment of the present invention removes the unnecessary layer from the rear surface of the substrate 10, to thereby sufficiently prevent the bending and the distortion of the substrate 10.

[97] In an example embodiment, the primary process chamber 300 and the secondary process chamber 600 are connected to the transfer chamber 100 through the first gate valve 301 and a fifth gate valve 601, so that the substrate 10 may be transferred from the primary process chamber 300 into the secondary process chamber 600 without atmospheric exposure.

[98] The transfer chamber 100, the primary process chamber 300 and the inspection chamber 500 of the present example embodiment are substantially the same as or similar to those of the first example embodiment of the present invention, and thus any detailed descriptions on the above chambers will be omitted hereinafter. Particularly, the transfer chamber 100 may have a circular body that is different from the rectangular transfer chamber 100 of the first example embodiment of the present invention. In such a case, the transfer unit 110 is positioned at the center of the transfer chamber 100, to thereby obtain a sufficiently spacious transfer area and to facilitate movement of the transfer unit 110 in the transfer chamber 100.

[99] In an example embodiment, the secondary process chamber 600 in which the rear etching process is performed may include a support 610 for supporting the substrate 10 in such a manner that the rear surface of the substrate 10 is exposed to the surroundings in the process chamber 600, a shield unit 620 positioned over the front surface of the substrate 10 such that the front surface of the substrate 10 is covered with the shield unit 620, a first gas supply unit 630 that faces the rear surface of the substrate 10 and supplies process gases such as etching gases onto the rear surface of the substrate 10, a plasma generator 640 for generating plasma in the process chamber 600, a second gas supply unit 650 for supplying an inert gas onto the front surface of the substrate 10 through the shield unit 620, an elevator 660 for moving the support 610 up and down, and a discharger 670 for discharging residual process gases and byproducts from the process chamber 600.

[100] In an example embodiment, the support 610 includes a horizontal protrusion member for supporting a rear edge portion of the substrate 10 such that the central rear surface of the substrate 10 is exposed to the surroundings and a vertical extension member extended from the horizontal protrusion member to the elevator 660. The horizontal protrusion member is configured into a circular ring, and the substrate 10 is positioned inside the ring. In an example embodiment, the horizontal protrusion member includes an inclined surface for guiding the substrate 10 and a flat surface with which the rear edge portion of the substrate 10 makes contact. As result, most of the rear surface of the substrate 10 is exposed except for the rear edge portion making contact with the flat surface of the horizontal protrusion member. The vertical extension member is secured to the elevator 660, so that horizontal protrusion member is also secured to the elevator 660 and moves up and down in accordance with the elevator 660 to thereby facilitate input and output of the substrate 10 into and out of the process chamber 600. In addition, the gap distance between the substrate 10 and the shield unit 620 may be easily controlled by the elevator 660.

[101] The shield unit 620 is configured to have substantially the same flat shape as the substrate 10, and positioned over the substrate 10. In the present embodiment, the shield unit 620 is positioned at a bottom surface of the process chamber 600, as shown in FIG. 9. The shield unit 620 has a size larger than or equal to that of the substrate 10, so that the front surface of the substrate 10 is covered with the shield unit 620. In addition, the shield unit 620 may be function as an electrode, so that the shield unit 620 may be electrically grounded or bias power may be applied to the shield unit 620. The shield unit 620 may be divided into a shield area and electrode area, as would be known to one of ordinary skill in the art.

[102] The second gas supply unit 650 may include a second gas injector 651 penetrating the shield unit 620 and injecting the inert gas onto the front surface of the substrate 10 and an inert gas reservoir 652 for holding the inert gas and connected to the second gas injector 651. Accordingly, the inert gas is injected to a space between the shield unit 620 and the front surface of the substrate 10, so that the process gas for etching the rear surface may be prevented from being supplied to the front surface of the substrate 10.

[103] The first gas supply unit 630 may include a first gas injector 631 positioned under the substrate 10 and injecting the process gas onto the rear surface of the substrate 10 and a process gas reservoir 632 for holding the process gas and connected to the first gas injector 631. For example, the first gas injector 631 may include a shower head, to thereby improve injection uniformity of the process gas onto the rear surface of the substrate 10.

[104] The plasma generator 640 may include a power source 642 for supplying electric power and a plasma electrode 641 for generating plasma around the rear surface of the substrate 10 in accordance with the electric power. The plasma electrode 641 is positioned under the rear surface of the substrate 10 and a top surface of the first gas injector 631, as shown in FIG. 9. The plasma electrode 641 may also include a plurality of holes corresponding to nozzles of the first gas injector 631, respectively. In the present embodiment, a first gap distance between the substrate 10 and the plasma electrode 641 is greater than a second gap distance between the substrate 10 and the shield unit 620. When the second gap distance is smaller than about 0.1 mm to about 0.5 mm, a second space between the substrate 10 and the shield unit 620 is so small that the plasma is not generated in the second space, and thus the plasma is only generated in a first space between the substrate 10 and the plasma electrode 641. The first and second gap distances among the substrate 10, the shield unit 620 and the plasma electrode 641 are controlled by the support 610 moving up and down by the elevator 660.

[105] The substrate 10 is transferred into the process chamber 600 through the fifth gate valve 601 and is positioned on the flat surface of the support 610. Then, the support 610 moves upwards in accordance with a lifting of the elevator 660, so that the substrate 10 is positioned adjacent to the shield unit 620 and the is spaced apart from the plasma generator640 by the first distance sufficient for generating the plasma in the first space between the substrate 10 and the plasma electrode 641. Then, the electrical power is applied to the plasma electrode 641, and the process gases are transformed into plasma in the first space. The unnecessary layer and the particles are chemically reacted with the plasma and may be removed from the substrate 10.

[106] The substrate 10 is transferred into the process chamber 600 from the primary process chamber 300 through the transfer chamber 100 that is also in the vacuum state, so that the substrate 10 is transferred into the secondary process chamber 600 from the primary process chamber 300 without atmospheric exposure. The substrate 10 may be transferred into a cleaning chamber (not shown) before transferring into the secondary process chamber 600, as would be known to one of ordinary skill in the art. After completing the rear etching process against the substrate 10, the substrate 10 is then transferred into the inspection chamber 500 for detecting the process defects and particles on the substrate 10. Thereafter, the substrate 10 is transferred into the load- lock chamber 200 through the transfer chamber 100, and is unloaded to the exterior of the process chamber 600.

[107] According to the second example embodiment of the present invention, the primary process, such as the deposition and etching process, the secondary process, such as the rear etching process against the substrate, and the inspection process on the substrate may be performed in a single apparatus, to thereby prevent the atmospheric exposure and contamination of the substrate.

[108] While the above example embodiments disclose that the deposition/etching process and the rear etching process may be performed in a single apparatus, the deposition/ etching process, the rear etching process and the peripheral etching process may be performed in the same single apparatus, as would be known to one of ordinary skill in the art. Hereinafter, an apparatus and a method of performing the deposition/etching process, the rear etching process and the peripheral etching process in the same single apparatus are disclosed in detail as a third example embodiment of the present invention. In the following descriptions, the same reference numerals denote the same elements in the first and second example embodiments of the present invention, and thus detailed descriptions of the same elements will be omitted.

[109]

[110] Embodiment 3

[111] FIG. 10 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a third example embodiment of the present invention. FIG. 11 is a view illustrating a first modified structure of the apparatus for processing substrates shown in FIG. 10, and FIG. 12 is a view illustrating a second modified structure of the apparatus for processing substrates shown in FIG. 10.

[112] Referring to FIG. 10, the apparatus 1 lOOfor processing substrates in accordance with a third example embodiment of the present invention includes a transfer chamber 100, a load- lock chamber 200, a primary process chamber 300, a first secondary process chamber 400 and a second secondary process chamber 600.

[113] In an example embodiment, a deposition process for forming a thin layer on a substrate 10 and an etching process for etching the substrate 10 or the thin layer to thereby form a pattern structure on the substrate 10 may be performed in the primary process chamber 100. A first etching process for removing contaminants and/or particles from a peripheral portion of the substrate 10 may be performed in the first secondary process chamber 400, and a second etching process for removing contaminants and/or particles from a rear surface of the substrate 10 may be performed in the second secondary process chamber 600.

[114] The third example embodiment of the present invention may allow the deposition/ etching process, the peripheral etching process and the rear etching process to be performed in the same single apparatus. Accordingly, the substrate 10 may be prevented from being exposed to air to thereby reduce oxidation of the substrate 10 and absorption of contaminants by the substrate 10. In addition, a transfer path of the substrate 10 may be sufficiently decreased to thereby reduce the process time for manufacturing a semiconductor device.

[115] The transfer chamber 100 may be configured to have a polygonal shape I accordance with process environments. In the present example embodiment, the transfer chamber 100 is shaped into an octagon as shown in FIG. 10. The load- lock chamber 200, the primary process chamber 300, the first secondary process chamber 400 and the second secondary process chamber 600 may be connected to each sidewall of the octagonal transfer chamber 100 through the first, the second, the third and the fifth gate valves 201, 301, 401 and 601.

[116] A bare substrate is transferred into the primary process chamber 300 from the load- lock chamber 200 through the transfer chamber 100, and the deposition process and/or the etching process may be performed on the bare substrate in the primary process chamber 300. In an example embodiment, the primary process chamber300 may be positioned adjacent to the load-lock chamber 200, to thereby shorten the transfer path of the substrate between the primary process chamber 300 and the load-lock chamber 200. In the present embodiment, the deposition process may be performed on the bare substrate in the primary process chamber 300. In the present example embodiment, a substrate on which no unit process is performed is referred to as a bare substrate, and a substrate on which a primary process such as the deposition or the etching process is referred to as a treated substrate. In a similar way, a substrate on which a first secondary process such as the peripheral etching process is referred to as a first post- treated substrate, and a substrate on which a second secondary process such as the rear etching process is referred to as a second post-treated substrate.

[117] Then, the treated substrate is unloaded from the primary process chamber 300 and is loaded into the first secondary process chamber 400 through the transfer chamber 100, and no sooner has the treated substrate been unloaded from the primary process chamber 300 than another bare substrate is loaded into the primary process chamber 300. The first etching process is performed on the treated substrate in the first secondary process chamber 400, so that the unnecessary layer and the particles are etched off from the peripheral portion of the treated substrate. The first secondary process chamber 400 is positioned adjacent to the primary process chamber 300, to thereby shorten the transfer path of the treated substrate between the primary process chamber 300 and the secondary process chamber 400.

[118] Then, the first post- treated substrate is unloaded from the first secondary process chamber 400 and is loaded into the second secondary process chamber 600 through the transfer chamber 100, and no sooner has the first post- treated substrate been unloaded from the first secondary process chamber 400 than another treated substrate is loaded into the first secondary process chamber 400. The second etching process is performed on the first post-treated substrate in the second secondary process chamber 600, so that the unnecessary layer and the particles are etched off from the rear surface of the first post-treated substrate. The second secondary process chamber 600 is positioned adjacent to the first secondary process chamber 400, to thereby shorten the transfer path of the first post-treated substrate between the first secondary process chamber 400 and the second secondary process chamber 600.

[119] Then, the second post- treated substrate is unloaded from the second secondary process chamber 400 and is loaded into the load-lock chamber 200 through the transfer chamberlOO, and no sooner has the second post-treated substrate been unloaded from the second secondary process chamber600 than another first post-treated substrate is loaded into the second secondary process chamber 400. The second post-treated substrate in the load- lock chamber 200 is unloaded to the exterior of the apparatus 1100.

[120] The above sequence of processing the substrates may be varied in accordance with the processing conditions and environments, and thus the substrate may be processes in various methods. For example, the bare substrate may sequentially undergo the primary process chamber 300, the second secondary process chamber 600 and the first secondary process chamber 400 in the order named. In addition, the bare substrate may sequentially undergo the first and second secondary process chamber400 and 600 and finally the primary process chamber 300 in the order named.

[121] Although not shown in figures, an inspection chamber may be installed at a sidewall of the transfer chamber 100. Particularly, a plurality of the inspection chambers may be installed on the transfer chamber 100. Accordingly, the first post- treated substrate may be inspected for detecting particles from the peripheral portion of the substrate in a first inspection chamber, and the second post-treated substrate may be inspected for detecting particles from the rear surface of the substrate in a second inspection chamber. The first or the second post-treated substrate may be inspected in the same inspection chamber, as would be known to one of ordinary skill in the art. The inspection chamber may also be separate from the transfer chamber.

[122] In an example embodiment, an inspection member 240 may be positioned in the load- lock chamber 200 in place of the inspection chamber 500, as shown in FIG. 11. A modification of the load-lock chamber 200 may include a holding space 210 connected to the transfer chamber 100, a cassette unit 250 holding the substrates 10 and a loader 220 interposed between the holding space 210 and the cassette unit 250. In an example embodiment, the loader 220 may include an alignment member230 for aligning the substrates 10, an inspection member 240 for inspecting the substrates 10 and a robot arm 260 for transferring the substrates 10 in the loader 220. One of the substrates 10 is unloaded from the cassette unit 250 by the robot arm 260, and is aligned with respect to a guide line by the alignment member 230. Then, the aligned substrate 10 is transferred into the holding space 210 by the robot arm 260. The substrate 10 in the holding space 210 is transferred into the transfer chamber 100 by the transfer unit 110. In contrast, when the primary process and the secondary process are performed on the substrate 10 in the apparatus 1110, the completed substrate 10 is transferred into the holding space 210 from the transfer chamber 100 by the transfer unit 110, and is transferred into the inspection member 240 by the robot arm 260. After the inspection process, the completed substrate 10 is then inserted into the cassette unit 250 by the robot arm 260. In an example embodiment, a plurality of the primary process chambers 300 may be installed in the apparatus 1110 as shown in FIG. 11. In the present embodiment, a first primary process chamber 300a and a second primary process chamber 300b are provided to the apparatus 1110.

[123] In an example embodiment, the primary process chamber 300 may be separate from the transfer chamber 100 as shown in FIG. 12. A modified apparatus 1120 of the present invention may include the first and second secondary process chambers 400 and 600, the inspection chamber 500 and the load-lock chamber 200 arranged around the transfer chamber 100, so that the peripheral etching process, the rear etching process and the inspection process may be performed in the same single apparatus. 1120. While the above example embodiment discloses that the primary process chamber is separate from the transfer chamber, any other modifications known to one of ordinary skill in the art may be used as the apparatus for processing substrates. For example, the load-lock chamber 200 may be separate from the transfer chamber 100.

[124]

[125] Embodiment 4

[126] FIG. 13 is a view illustrating a structure of an apparatus for processing substrates for manufacturing a semiconductor device in a fourth example embodiment of the present invention. FIG. 14 is a cross-sectional view illustrating the secondary process chamber of the apparatus shown in FIG. 13.

[127] Referring to FIGS. 13 and 14, the apparatus 1200 for processing substrates in accordance with a fourth example embodiment of the present invention includes a transfer chamber 100, a load- lock chamber 200, a primary process chamber 300, an inspection chamber 500 and a secondary process chamber 700. In the present example embodiment, the first etching process against the peripheral portion of the substrate and the second etching process against the rear surface of the substrate may be performed in the secondary process chamber 700 in the same process. As a result, no respective chambers are needed for the first and second etching processes.

[128] The primary process chamber 300 and the inspection chamber 500 have substantially the same structure and function as described in the above first, second and third example embodiments of the present invention, and thus any further detailed descriptions on the primary process chamber 300 and the inspection chamber 500 are omitted hereinafter.

[129] In an example embodiment, the secondary process chamber700 may include a peripheral etching module 700a for performing a peripheral etching process against the substrate and a rear etching module 700b for performing a rear etching process against the substrate. For example, the peripheral and rear etching processes against the substrate may be performed through an etching process in accordance with the kinds of the particles. In the present example embodiment, a plasma etching process may be performed in the secondary process chamber 700. The peripheral etching module 700a and the rear etching module 700b may be positioned in the same chamber, or may be positioned in different chambers under substantially the same process conditions.

[130] In an example embodiment, the peripheral etching module 700a may include a peripheral etching chamber 710, so that the contaminants such as particles are etched off from the peripheral portion of the substrate by using plasma.

[131] A high frequency voltage is applied to a lower electrode (not shown) of the peripheral etching chamber 710, to thereby transform the process gas into the plasma. The contaminants on the peripheral portion of the substrate are reacted with the plasma to thereby be etched off from the peripheral portion of the substrate.

[132] In an example embodiment, the rear etching module 700b may be positioned adjacent to the peripheral etching module 700a, and may include a rear etching chamber 720. The contaminants such as particles are etched off from the rear surface of the substrate in the rear etching module 700b.

[133] A high frequency voltage is applied to a lower electrode (not shown) of the rear etching chamber 720, to thereby transform the process gas into the plasma. The contaminants on the rear surface of the substrate are reacted with the plasma to thereby be etched off from the rear surface of the substrate.

[134] The transfer chamber 100 may include a transfer unit 110 adjacent to the peripheral and rear etching chambers 710 and 720. In an example embodiment, the transfer unit 110 may include a body (not shown) and a blade (not shown) connected to the body and rotating with respect to an axis thereof. When the contaminants are etched off from the peripheral portion of the substrate in the peripheral etching module 700a, the substrate is transferred into the transfer chamber 100 by the transfer unit 110. The transfer unit 110 rotates with respect to the axis thereof, so that the substrate is turned over and the turned-over substrate is transferred into the rear etching module 700b. That is, the direction of the rear surface of the substrate in the peripheral etching module 700a is reverse to that in the rear etching module 700b. For example, the rear surface of the substrate is directed upwards in the rear etching module 700b while the rear surface of the substrate is directed downwards in the peripheral etch module 700a. Then, the contaminants are etched off from the rear surface of the substrate in the rear etching module 700b. That is, the transfer unit 110 pulls the substrate out of the peripheral etching chamber 710, and then transfers the substrate into the rear etching chamber 720. In contrast, the transfer unit 110 pulls the substrate out of the rear etching chamber 720, and then transfers the substrate into the peripheral etching chamber 710, as would be known to one of ordinary skill in the art.

[135] The load- lock chamber 200 provides a standby space for temporarily holding the substrate while the peripheral and rear etching processes are performed in the peripheral and rear etching chambers 710 and 720, respectively. In an example embodiment, the load-lock chamber 200 may include a peripheral load- lock chamber 200a of which the inner conditions such as a temperature, a pressure and moisture is determined by the process conditions in the peripheral etching chamber 710, and a rear load- lock chamber 200b of which the inner conditions such as a temperature, a pressure and moisture is determined by the process conditions in the rear etching chamber 720. Accordingly, rapid variation of the process conditions may be mitigated between the exterior of the apparatus and the etching chambers 710 and 720, respectively. The load-lock chamber 200 has the same structure and function as described in the first, second and third example embodiments of the present invention, and thus any detailed descriptions on the load-lock chamber 200 will be omitted hereinafter.

[136] FIG. 15 is a cross-sectional view illustrating a modification of the secondary process chamber shown in FIG. 14. The secondary process chamber in FIG. 15 is the same structure as the secondary process chamber in FIG. 14, except that a plurality of the peripheral etching modules and a plurality of the rear etching modules are arranged in the apparatus 1200.

[137] Referring to FIG. 15, the peripheral etching module 700a includes a first peripheral etching module 700al for performing the peripheral etching process with respect to a first substrate and a second peripheral etching module 700a2 for performing the peripheral etching process with respect to a second substrate. Further, the rear etching module 700b includes a first rear etching module 700bl for performing the rear etching process with respect to a third substrate and a second rear etching module 700b2 for performing the rear etching process with respect to a fourth substrate. The first and second substrates may be the same as or different from the third and fourth substrates, as would be known to one of ordinary skill in the art. Accordingly, the peripheral etching process may be performed on a plurality of the substrates in the peripheral etching module 700a irrespectively of the rear etching process, and the rear etching process may be performed on a plurality of the substrates in the rear etching module 700b irrespectively of the peripheral etching process.

[138] In an example embodiment, the transfer unit may be provided to each of the peripheral etching module 700a and the rear etching module 700b, because the peripheral etching process and the rear etching process may be performed independently from each other. For example, the transfer unit 110 may include a first transfer member 110a for transferring the substrates into the peripheral etching module 700a and a second transfer member 110b for transferring the substrates into the rear etching module 700b.

[139] In an example embodiment, the peripheral load- lock chamber 200a may include an input chamber 200al for holding the substrate transferred into the peripheral etching chamber 710 and an output chamber 200a2 for holding the substrate transferred from the peripheral etching chamber 710. The rear load-lock chamber 200b may also include an input chamber 200bl for holding the substrate transferred into the rear etching chamber 710 and an output chamber 200a2 for holding the substrate transferred from the peripheral etching chamber 710.

[140] Therefore, the first and second substrates are transferred from the peripheral load- lock chamber 200a to each of the first and second peripheral etching modules 700al and 700a2 by the first transfer member 110a, and the third and fourth substrates are transferred from the rear load- lock chamber 200bto each of the first and second rear etching modules 700bl and 700b2 by the second transfer member 110b.

[141] Accordingly, the peripheral etching process may be selectively performed on a plurality of the substrates in the peripheral etching module 700a, and the rear etching process may be selectively performed on a plurality of the substrates in the rear etching module 700a. Therefore, when the peripheral etching process and the rear etching process are performed at different times, the contaminants may be more efficiently etched off from the peripheral portion and the rear surface of the substrates, respectively.

[142] As a result, the primary process and the secondary process performed against the substrate may be performed in the same single apparatus without atmospheric exposure of the substrate. In addition, the peripheral etching process and the rear etching process may be performed in the same space or chamber, to thereby increase the process efficiency of the peripheral and rear etching processes.

[143] FIG. 16 is a flowchart showing a method of performing the peripheral and rear etching processes in an example embodiment of the present invention.

[144] Referring to FIGS. 14 and 16, the substrate is loaded into the peripheral etching chamber 710. For example, the substrate may include the thin layer on the central portion of the front surface thereof and the unnecessary thin layer on the peripheral portion thereof.

[145] Then, the inner conditions of the peripheral etching chamber 710 such as a temperature and a pressure may be controlled for the peripheral etching process. In the peripheral etching chamber 710, the peripheral portion of the substrate is exposed to the surroundings.

[146] Then, the process gases are supplied to the peripheral etching chamber 710, and are transformed into the plasma around the peripheral portion of the substrate. In an example embodiment, a high frequency voltage is applied to the lower electrode and the upper electrode is electrically grounded in the chamber 710, most of the plasma is generated around the peripheral portion of the substrate. Then, the contaminants are intensively reacted with the plasma around the peripheral portion of the substrate, to thereby be etched off from the peripheral portion of the substrate.

[147] In an example embodiment, the peripheral etching module 700a may include a plurality of the chambers, and thus the peripheral etching process may be simultaneously performed on a plurality of the substrates, to thereby improve the efficiency of the peripheral etching process.

[148] Then, the substrate is transferred into the rear etching chamber 720 from the peripheral etching chamber 710 by the transfer unit 110. The substrate transferred from the peripheral etching chamber 710 may be turned over by the blade of the transfer unit 110. Then, the rear etching process may be performed on the rear surface of the substrate in the rear etching chamber 720. In an example embodiment, the rear etching module 700b may include a plurality of the chambers, and thus the rear etching process may be simultaneously performed on a plurality of the substrates, to thereby improve the efficiency of the rear etching process.

[149] Then, the substrate is transferred from the rear etching chamber720 and is transferred into the load-lock chamber 200.

[150] Accordingly, the contaminants may be efficiently removed from the peripheral portion and rear surface of the substrates in the same single apparatus by optimal and operation of the primary process chamber, the secondary process chamber and the transfer chamber.

[151] While the above method of the present example embodiment discloses that the rear etching process is performed after the peripheral etching process is performed, the peripheral etching process may be performed after the rear etching process is performed, as would be known to one of ordinary skill in the art. Industrial Applicability [152] According to the example embodiments of the present invention, a primary process chamber and a secondary process chamber, such as a peripheral etching chamber or a rear etching chamber, are arranged around a transfer chamber, so that a substrate may be transferred between the primary process chamber and the secondary process chamber without atmospheric exposure of the substrate. In addition, the peripheral etching process and the rear etching process may be performed in the same single apparatus, to thereby reduce the etching time of the peripheral and the rear etching processes and improve the manufacturing efficiency of a semiconductor device.

[153] Further, an inspection chamber may also be arranged around the transfer chamber, to thereby facilitate an inspection process for detecting process defects from a central portion of the substrate and contaminants such as particles from a peripheral portion and a rear surface of the substrate.

[154] Although the exemplary embodiments of the present invention have been described, it is understood that the present invention should not be limited to these exemplary embodiments but various changes and modifications can be made by one skilled in the art within the spirit and scope of the present invention as hereinafter claimed.

[155]

Claims

[1] An apparatus for processing substrates for manufacturing a semiconductor device, comprising: a load- lock chamber holding a plurality of substrates; a primary process chamber for performing a primary process for manufacturing the semiconductor device; a secondary process chamber for performing an etching process against a peripheral portion of the substrate; and a transfer chamber adjacent to the load-lock chamber, the primary process chamber and the secondary process chamber, so that the substrate is transferred in the transfer chamber among the load-lock chamber, the primary process chamber and the secondary process chamber.

[2] The apparatus of claim 1, wherein the load-lock chamber, the primary process chamber and the secondary process chamber include a gate portion that makes contact with the transfer chamber, so that each inner space of the load-lock chamber, the primary process chamber and the secondary process chamber is connected to or separated from a transfer space of the transfer chamber.

[3] The apparatus of claim 1, wherein the secondary process chamber includes: a stage supporting a rear surface of the substrate in such a manner that the peripheral portion of the substrate is exposed to the surroundings in the secondary process chamber; a shield unit adjacent to a front surface opposite to the rear surface of the substrate and covering a central portion of the front surface, so that the peripheral portion of the substrate is exposed to the surroundings; and a plasma generator for generating plasma around the peripheral portion of the substrate.

[4] The apparatus of claim 3, further comprising a gas injector penetrating the shield unit and injecting an inert gas onto the central portion of the front surface of the substrate.

[5] The apparatus of claim 3, wherein the plasma generator includes a first electrode ring arranged along an edge portion of the stage, a second electrode ring arranged along an edge portion of the shield unit and a power source for applying electric power for generating the plasma.

[6] The apparatus of claim 5, wherein the power source applies a voltage to the first electrode ring or the second electrode ring for generating the plasma.

[7] The apparatus of claim 5, wherein the plasma generator further includes an antenna spaced apart from the peripheral portion of the substrate and to which electric power for generating the plasma is applied.

[8] The apparatus of claim 3, wherein the plasma generator includes an electrode ring arranged along an edge portion of the stage or of the shielding unit, and a power source for applying electric power for generating the plasma to the stage.

[9] The apparatus of claim 3, wherein the plasma generator includes an antenna spaced apart from the peripheral portion of the substrate and a power source for applying electric power to the antenna.

[10] The apparatus of claim 1, further comprising: a loader that is connected to the load- lock chamber and loads the substrate into the load- lock chamber from the exterior of the apparatus; and an alignment member that is connected to the loader and aligns the substrate.

[11] An apparatus for processing substrates for manufacturing a semiconductor device, comprising: a load- lock chamber holding a plurality of substrates; a primary process chamber for performing a primary process for manufacturing the semiconductor device; a secondary process chamber for performing an etching process against a rear surface of the substrate; and a transfer chamber adjacent to the load-lock chamber, the primary process chamber and the secondary process chamber, so that the substrate is transferred in the transfer chamber among the load-lock chamber, the primary process chamber and the secondary process chamber.

[12] The apparatus of claim 11, wherein the load-lock chamber, the primary process chamber and the secondary process chamber include a gate portion that makes contact with the transfer chamber, so that each inner space of the load-lock chamber, the primary process chamber and the secondary process chamber is connected to or separated from a transfer space of the transfer chamber.

[13] The apparatus of claim 11, wherein the secondary process chamber includes: a securing unit for securing the substrate in such a manner that the rear surface of the substrate is exposed to the surroundings in the secondary process chamber; a supply unit for supplying a process gas onto the rear surface of the substrate; and a plasma generator for generating plasma around the rear surface of the substrate.

[14] The apparatus of claim 13, wherein the secondary process chamber further includes a shield unit for shielding a front surface opposite to the rear surface of the substrate.

[15] The apparatus of claim 13, wherein the plasma generator includes an electrode spaced apart from the rear surface of the substrate and facing the rear surface of the substrate, and a power source for applying electric power to the electrode.

[16] The apparatus of claim 15, wherein a first gap distance between the electrode and the rear surface of the substrate is larger than a second gap distance between the shielding unit and the front surface of the substrate.

[17] The apparatus of claim 14, further comprising a gas injector penetrating the shield unit and injecting an inert gas onto the front surface of the substrate.

[18] The apparatus of claim 11 ,further comprising: a loader that is connected to the load- lock chamber and loads the substrate into the load- lock chamber from the exterior of the apparatus; and an alignment member that is connected to the loader and aligns the substrate.

[19] An apparatus for processing substrates for manufacturing a semiconductor device, comprising: a load- lock chamber holding a plurality of substrates; a primary process chamber for performing a primary process for manufacturing the semiconductor device; a first secondary process chamber for performing an etching process against a peripheral portion of the substrate; a second secondary process chamber for performing an etching process against a rear surface of the substrate; and a transfer chamber adjacent to the load-lock chamber, the primary process chamber, the first secondary process chamber and the second secondary process chamber, so that the substrate is transferred through the transfer chamber to/from the load-lock chamber, the primary process chamber and the first and second secondary process chambers.

[20] The apparatus of claim 19, wherein the load-lock chamber, the primary process chamber and the secondary process chamber include a gate portion that makes contact with the transfer chamber, so that each inner space of the load-lock chamber, the primary process chamber and the secondary process chamber is connected to or separated from a transfer space of the transfer chamber.

[21] The apparatus of claim 19, further comprising: a loader that is connected to the load- lock chamber and loads the substrate into the load- lock chamber from the exterior of the apparatus; and an alignment member that is connected to the loader and aligns the substrate.

[22] An apparatus for processing substrates for manufacturing a semiconductor device, comprising: a first process chamber for performing an etching process against a peripheral portion of the substrate; a second process chamber for performing an etching process against a rear surface of the substrate; and a transfer chamber adjacent to the first and second process chambers, so that the substrate is transferred through the transfer chamber to/from the first and second process chambers.

[23] The apparatus of claim 22, wherein the transfer chamber further includes a transfer unit having a body and a blade rotationally connected to the body, so that the substrate is turned over by the blade.

[24] The apparatus of claim 22, wherein the first process chamber includes first and second peripheral etching modules in which first and second etching processes are simultaneously performed against the peripheral portions of first and second substrates, respectively, and first and second rear etching modules in which third and fourth etching processes are simultaneously performed against the rear surfaces of third and fourth substrates, respectively.

[25] The apparatus of claim 24, wherein the transfer chamber includes a first transfer unit for transferring the first and second substrates into the first and second peripheral etching modules, and a second transfer unit for transferring the third and fourth substrates into the first and second rear etching modules.

[26] A method of processing substrates for manufacturing a semiconductor device, comprising: loading the substrate into a transfer chamber from a load-lock chamber; transferring the substrate into a primary process chamber, to thereby perform a primary process for manufacturing the semiconductor device on the substrate; transferring the substrate into a first secondary process chamber through the transfer chamber, to thereby perform a first etching process against a peripheral portion of the substrate; and unloading the substrate from the first secondary process chamber into the load- lock chamber through the transfer chamber.

[27] The method of claim 26, further comprising aligning the substrate before loading the substrate into a transfer chamber.

[28] The method of claim 26, further comprising inspecting the peripheral portion of the substrate after unloading the substrate from the secondary process chamber into the load-lock chamber.

[29] The method of claim 26, further comprising transferring the substrate into a second secondary process chamber through the transfer chamber, to thereby perform a second etching process against a rear surface of the substrate before or after the etching process.

[30] The method of claim 26, wherein the primary process includes a deposition process for forming a thin layer on the substrate and an etching process for partially removing the thin layer from the substrate to thereby form a pattern structure on the substrate. [31] A method of processing substrates for manufacturing a semiconductor device, comprising: loading the substrate into a transfer chamber from a load-lock chamber; transferring the substrate into a primary process chamber, to thereby perform a primary process for manufacturing the semiconductor device on the substrate; transferring the substrate into a secondary process chamber through the transfer chamber, to thereby perform an etching process against a rear surface of the substrate; and unloading the substrate from the secondary process chamber into the load-lock chamber through the transfer chamber. [32] A method of processing substrates for manufacturing a semiconductor device, comprising: performing a first etching process against a peripheral portion of a substrate in a first etch module; transfer the substrate into a second etch module from the first etch module; and performing a second etching process against a rear surface of the substrate in a second etch module. [33] The method of claim 32, wherein a plurality of the substrates is simultaneously etched in the first and second the etching processes, respectively. [34] The method of claim 32, further comprising turning over the substrate before the substrate is transferred into the second etch module, so that the rear surface of the substrate is directed upwards in the second etch module while the rear surface of the substrate is directed downwards in the first etch module.