CN108091589B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN108091589B
CN108091589B CN201710611245.1A CN201710611245A CN108091589B CN 108091589 B CN108091589 B CN 108091589B CN 201710611245 A CN201710611245 A CN 201710611245A CN 108091589 B CN108091589 B CN 108091589B
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substrate
cover plate
chamber
load lock
supporting unit
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CN108091589A (en
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朴范埈
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Psk Co ltd
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Psk Co ltd
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

Abstract

The invention provides a substrate processing apparatus and a substrate processing method, the substrate processing apparatus of the invention includes: an Equipment Front End Module (EFEM) having a load port and an indexing robot; a process chamber; a transfer chamber having a transfer robot for carrying in and out a substrate with respect to the process chamber; and a load lock chamber between the transfer chamber and the Equipment Front End Module (EFEM), and having a substrate supporting unit for supporting a substrate and a cover plate supporting unit for supporting a cover plate covering an outer circumference of the substrate.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method.
Background
In order to manufacture a semiconductor device or a liquid crystal display, various processes, such as an etching process, an ashing process, and a cleaning process, may be performed on a substrate. An ICP source, a remote plasma source, etc. are used as the plasma source.
The above process is performed using a cluster type (cluster type) device. In a cluster type apparatus, a load lock chamber and a process chamber are arranged around a transfer chamber.
In the transfer chamber, a transfer unit for transferring a chip is provided between the load lock chamber and the process chambers, or between one of the process chambers and another of the process chambers.
Disclosure of Invention
An embodiment of the present invention provides a substrate processing apparatus and a substrate processing method for efficiently processing a substrate.
An embodiment of the present invention provides a substrate processing apparatus and a substrate processing method for processing a substrate when an outer periphery of the substrate is covered.
Exemplary embodiments of the inventive concept may provide a substrate processing apparatus including: an equipment front end module EFEM having a load port and an index robot; a process chamber; a transfer chamber having a transfer robot for carrying in and out a substrate with respect to the process chamber; and a load lock chamber between the transfer chamber and the apparatus front end module EFEM, and having a substrate supporting unit for supporting a substrate and a cover plate supporting unit for supporting a cover plate covering an outer circumference of the substrate.
In an exemplary embodiment, the substrate supporting unit may include a first substrate supporting unit for supporting a bottom surface of the substrate.
In an exemplary embodiment, the substrate supporting unit may include a second substrate supporting unit for supporting an outer circumference of the substrate.
In an exemplary embodiment, the cover plate supporting unit is located at an outer side of the substrate supporting unit.
In an exemplary embodiment, the cover plate supporting unit may be positioned such that the top end thereof is higher than the top end of the substrate supporting unit by a predetermined length.
Exemplary embodiments may further include a pusher located at an outer side of the substrate support unit and capable of moving in a lateral direction of a substrate disposed in the substrate support unit.
In an exemplary embodiment, a plurality of pushers may be provided to face each other with respect to the substrate.
In an exemplary embodiment, a plurality of process chambers may be provided, and the load lock chamber may have a plurality of transfer zones, wherein each transfer zone has a substrate support unit and a cover plate support unit.
In an exemplary embodiment, each transfer region may provide a carry-in path for substrates to be carried in from the equipment front end module EFEM to the transfer chamber and a carry-out path for substrates to be carried out from the transfer chamber to the equipment front end module EFEM.
In an exemplary embodiment, the number of transfer regions is greater than the number of process chambers.
In an exemplary embodiment, the process chamber may perform a process treatment by a plasma.
Other embodiments of the inventive concept may provide a substrate processing method including: loading an unprocessed substrate into a load lock chamber; disposing a cover plate on an outer periphery of a substrate within the load lock chamber; moving the unprocessed substrate out, wherein the cover plate is disposed from the load lock chamber to a transfer chamber; and carrying in the unprocessed substrate, wherein the cover plate is arranged to the process chamber.
In an exemplary embodiment, providing the cap plate may include: vertically aligning the unprocessed substrates while the unprocessed substrates are positioned below the lid plate disposed in the load lock chamber; and raising the unprocessed substrate in the direction of the cover plate.
In an exemplary embodiment, the cover plate disposed in the load lock chamber may be provided in a cover plate supporting unit disposed at an outer side of a substrate supporting unit for supporting the substrate in the load lock chamber.
In an exemplary embodiment, the loading of the unprocessed substrate into the load lock chamber may be performed by an index robot of an equipment front end module EFEM; and the setting of the cover plate and the carrying out of the unprocessed substrate from the load lock chamber may be performed by a transfer robot of the transfer chamber.
In an exemplary embodiment, the process chamber may process the substrate using a plasma.
Exemplary embodiments of the inventive concept may provide a substrate processing method including: carrying an unprocessed substrate from a transfer chamber into a load lock chamber, and disposing a cover plate on an outer periphery of the substrate; disposing the cover plate to an interior space of the load lock chamber; disposing the processed substrate in a substrate support unit disposed in the load lock chamber; and carrying out the substrate to an equipment front end module EFEM.
In an exemplary embodiment, disposing the cover plate to the inside of the load lock chamber may include: disposing the processed substrate to an upper side of a cover plate supporting unit disposed in the load lock chamber; and moving the processed substrate downward.
In an exemplary embodiment, the carrying out of the substrate to the equipment front end module EFEM may be performed by an index robot provided in the equipment front end module EFEM; and the carrying in of the substrate to the load lock chamber and the setting of the substrate in the support unit may be performed by a transfer robot provided in the transfer chamber.
Embodiments of the inventive concept may provide a substrate processing apparatus and a substrate processing method for efficiently processing a substrate.
Embodiments of the inventive concept may provide a substrate processing apparatus and a substrate processing method for processing a substrate while a periphery of the substrate is covered.
Drawings
Fig. 1 is a plan view of a substrate processing apparatus according to an embodiment.
Fig. 2 is a view of a load lock chamber.
Figure 3 is a view of a plasma module that may be provided in the process chamber of figure 1.
Fig. 4 is a view of the load lock chamber before the substrate is brought in.
Fig. 5 is a view illustrating a state in which a substrate is carried into a load lock chamber in the EFEM.
Fig. 6 is a view showing a pusher which changes the position of the substrate.
Fig. 7 is a view of disposing the cover plate in the base plate.
Fig. 8 is a view showing a state in which the transfer robot carries in the substrate to the process chamber.
Fig. 9 is a view showing a state in which a substrate is disposed on a susceptor.
Description of reference numerals
1: a substrate processing apparatus; 4: a carrier; 6: a support member; 10: a load port; 11: a first direction; 12: a second direction; 20: an Equipment Front End Module (EFEM); 21: a transport frame; 25: an indexing robot; 27: a transfer rail; 30: a process treatment unit; 40: a load lock chamber; 41a, 41 b: a transfer area; 50: a transfer chamber; 53: a transfer robot; 60: a process chamber; 70: a controller; 100: a housing; 110: a substrate supporting unit (first substrate supporting unit); 120: a substrate supporting unit (second substrate supporting unit); 121: a support groove; 130: a cover plate supporting unit; 140: a pusher; 150: a cover plate; 151: a receiving groove; 152: a groove; 2100: a chamber; 2110: a main body; 2111: a vent hole; 2112: an exhaust line; 2120: a sealing cover; 2121: expanding the space; 2210: a bias power; 2200: a base; 2220: a heating member; 2230: a lift pin; 2300: a shower head; 2310: a dispensing aperture; 2400: a plasma excitation unit; 2410: an oscillator; 2420: a waveguide; 2430: a dielectric waveguide; 2440: a process gas supply unit; s: substrate
Detailed Description
Embodiments will be described in more detail below with reference to the accompanying drawings. Embodiments may, however, take different forms and should not be construed as limited to the particular embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope to those skilled in the art. In the drawings, the shape is exaggerated for clarity.
Fig. 1 is a plan view of a substrate processing apparatus according to an embodiment.
Referring to fig. 1, the substrate processing apparatus 1 includes an equipment front end module EFEM20, a process chamber 30, and a controller 70. The EFEM20 and the process chamber 30 are arranged in series along a single direction. Hereinafter, the direction in which the EFEM20 and the process chamber 30 are arranged is referred to as a first direction 11, and a direction perpendicular to the first direction 11 when viewed from the top is referred to as a second direction 12.
The EFEM20 includes a load port 10 and a transfer frame 21. The load port 10 is disposed in front of the EFEM20 along a first direction 11. The load port 10 has a plurality of supports 6. Each support 6 is arranged in series along the second direction 12 and a substrate is to be provided in a process and provided with a carrier 4 (e.g. wafer boat, FOUP, etc.). The carrier 4 stores the processed substrate W. In the carrier 4, the substrates W to be provided in the process and the substrates W whose processing is completed are stored. The transfer frame 21 is disposed between the load port 10 and the process chamber 30. The transfer frame 21 is disposed therein and includes an index robot 25 for transferring the substrate W between the load port 10 and the process chamber 30. The index robot 25 moves along a transfer rail 27, the transfer rail 27 is disposed along the second direction 12, and transfers the substrate W between the carrier 4 and the process chamber 30.
The process processing chamber 30 includes a load lock chamber 40, a transfer chamber 50, and a process chamber 60.
The load lock chamber 40 and the transfer frame 21 are disposed adjacently. In one example, the load lock chamber 40 may be disposed between the transfer chamber 50 and the EFEM 20. The load lock chamber 40 provides a spare space for substrates W to be provided in a process prior to being transferred to the process chamber 60 or for substrates W that have completed processing prior to being transferred to the EFEM 20.
The transfer chamber 50 and the load lock chamber 40 are disposed adjacently. The transfer chamber 50 may have a polygonal body when viewed from the top side. In an example, the transfer chamber 50 may have a pentagonal body when viewed from the top side. In the outer surface of the body, a load lock chamber 40 and a plurality of process chambers 60 are arranged along the circumference of the body. In each sidewall of the body, a channel (not shown) for entry of a substrate W is formed and connected to the transfer chamber 50, the load lock chamber 40, or the process chamber 60. In each channel, a door (not shown) is used to open and close the channel, thereby sealing therein. The inner space of the transfer chamber 50 is provided with a transfer robot 53 for transferring the substrate W between the load lock chamber 40 and the process chamber 60. The transfer robot 53 transfers an unprocessed substrate W to be loaded in the load lock chamber 40 to the process chamber 60, or transfers a substrate W that has completed processing to the load lock chamber 40. In order to sequentially provide substrates W in the plurality of process chambers 60, the substrates W are transferred between the process chambers 60. In the sidewall of the transfer chamber 50 adjacent the EFEM20, each load lock chamber 40 is disposed, and in the remainder of the sidewall, a process chamber 60 is disposed.
The process chamber 60 is disposed along the periphery of the transfer chamber 50. A plurality of process chambers 60 may be provided. A substrate W may be processed in each process chamber 60. The process chamber 60 receives the substrate W from the transfer robot 53, processes the substrate W, and provides the processed substrate W to the transfer robot 53. The processing performed in each process chamber 60 may be different. The process performed by the process chamber 60 may be a process using the substrate W during the manufacture of a semiconductor device or a display panel. In one example, one or more of the process chambers 60 may include a plasma module for processing the substrate W with a plasma.
The controller 70 controls the composition of the substrate processing apparatus 1.
Fig. 2 is a view of a load lock chamber.
Referring to fig. 2, the load lock chamber 40 includes a housing 100, substrate S supporting units 110 and 120, and a cover supporting unit 130.
The housing 100 forms a frame of the loadlock chamber 40. The housing 100 connects the transfer frame 21 and the transfer chamber 50. The opening (not shown) connecting the housing 100 and the transfer frame 21 may be opened and closed by a door (not shown). The opening (not shown) connecting the housing 100 and the transfer chamber 50 may be opened and closed by a door (not shown). In the casing 100, the transfer areas 41a, 41b in which the substrates S are disposed may be provided in plural numbers. In one example, the number of transfer regions 41a, 41b may be the same as or greater than the number of process chambers 60 in the housing 100. The transfer areas 41a, 41b may be arranged vertically, horizontally, or both. The transfer areas 41a, 41b provide passages for carrying in substrates to be processed and carrying out processed substrates.
The substrate support units 110 and 120 support the substrates S carried into the load lock chamber 40 from each of the transfer areas 41a and 41 b. The substrate supporting units 110 and 120 include a first substrate supporting unit 110 and a second substrate supporting unit 120.
The first substrate supporting unit 110 supports the bottom surface of the substrate S. The first substrate supporting unit 110 may be located at the bottom of the transfer regions 41a, 41 b. The first substrate supporting unit 110 is provided with a shape so as to prevent interference with the index robot 25, the transfer robot 53 when the index robot 25, the transfer robot 53 carry in and out the substrate S. In one example, the first substrate supporting unit 110 may be provided with a plurality of loading shapes so as to support the bottom surface of the substrate S.
In an example, the first substrate supporting unit 110 may be provided in a plate shape, thereby including a unit for supporting the substrate S and pins for lifting the substrate S to a predetermined height when the index robot 25, the transfer robot 53 exchange the substrate S.
The second substrate supporting unit 120 supports the outer circumference of the substrate S. The plurality of second substrate supporting units 120 may be located at positions corresponding to the outer edges of the substrate S. In one example, when the substrate S is disposed in a square shape, two or more second substrate supporting units 120 may be positioned on the edge of the substrate S. When the substrate S is disposed in a circular shape, the two or more second substrate supporting units 120 may be located at positions corresponding to any outer bottom surface of the substrate S. Here, the second substrate support units 120 may be equally spaced along the circumference.
In the second substrate supporting unit 120, a supporting groove 121 corresponding to the outer bottom surface of the substrate S may be formed. When the substrate S moves perpendicular to the arrangement of the second substrate supporting unit 120, the substrate S is supported by the supporting groove 121 and prevented from deviating to the outside. A distance between an outer surface and an outer surface of the support groove 121 may be formed to be greater than a predetermined size and a size of the substrate S. Even when there is an error while the substrate S and the second substrate supporting unit 120 are vertically arranged, the substrate S may be positioned in the supporting groove 121.
One of the first substrate-supporting unit 110 and the second substrate-supporting unit 120 may be omitted. The substrate S may be supported by the first substrate supporting unit 110 or the second substrate supporting unit 120.
The cover plate supporting unit 130 supports the cover plate 150 in each of the conveying areas 41a, 41 b. The cover supporting unit 130 is located at an outer side of the substrate supporting units 110 and 120 and prevents interference with the substrate S located in the substrate supporting units 110 and 120. The cover supporting unit 130 is located at a position where the index robot 25 and the transfer robot 53 can prevent interference with the loading and unloading of the substrate S. In one example, the cover plate supporting unit 130 may be a plurality of load ports or a plate having a predetermined width located outside the substrate supporting units 110 and 120. The upper end of the cover supporting unit 130 may be higher than the upper ends of the substrate supporting units 110 and 120 by a predetermined height. Accordingly, the cover plate 150 supported by the cover plate supporting unit 130 may be located at a higher position than the substrate S located in the substrate supporting units 110, 120.
Outside the substrate support units 110, 120, a pusher 140 may be provided. The pusher 140 is disposed such that a surface facing a side surface of the substrate S is movable along the substrate S. The plurality of pushers 140 may be disposed to face each other with respect to the substrate S. In an example, two pushers 140 may be disposed to face each other based on the substrate S, or four pushers 140 may be disposed to cross each other.
Figure 3 is a view of a plasma module that may be provided in the process chamber of figure 1.
Referring to fig. 3, the process chamber 60 includes a chamber 2100, a pedestal 2200, a showerhead 2300, and a plasma excitation unit 2400.
The chamber 2100 provides a space for a substrate processing process. The chamber 2100 includes a body 2110 and a sealing cap 2120. The upper surface of the body 2110 is open and has an inner space. An opening (not shown) is formed in the sidewall of the body 2110 at the substrate entrance, and the opening can be opened and closed by an opening and closing device such as a slit door (not shown). The opening and closing device closes the opening when the substrate W is processed in the chamber 2100, and opens the opening when the substrate W is carried into the chamber 2100 and carried out to the outside.
A vent 2111 is formed in the bottom wall of the body 2110. The vent 2111 is connected to an exhaust line 2112. The pressure within the chamber 2100 is controlled by an exhaust line 2112, and reaction byproducts generated in the process are exhausted to the outside of the chamber 2100.
The sealing cover 2120 is coupled to the upper wall of the body 2110, covers the opened upper surface of the body 2110 and seals the inside of the body 2110. The upper end of the sealing cover 2120 is connected to the plasma exciting unit 2400. An expansion space 2121 is formed in the sealing cover 2120. The expanded space 2121 widens as it approaches the showerhead 2300. For example, the expansion space 2121 may be in the form of a funnel turned upside down.
The base 2200 is located in the chamber 2100. A substrate is placed on the upper surface of the susceptor 2200. In the susceptor 2200, a cooling path (not shown) in which a cooling fluid circulates may be formed. The cooling fluid circulates along the cooling path and cools the susceptor 2200. In the pedestal 2200, power may be applied from a bias power (bias power)2210 to control the processing of the substrate W from the plasma. The power applied from the bias power 2210 may be Radio Frequency (RF). The susceptor 2200 forms a sheath by the power supplied from the bias power 2210 and can form a high density plasma, thereby enhancing the process capability.
The heating member 2220 may be provided in the base 2200. In an embodiment, the heating member 2220 may be a hot wire. The heating member 2220 heats the substrate W to a predetermined temperature.
The showerhead 2300 is coupled to an upper wall of the body 2110. The showerhead 2300 has a circular shape and may be arranged parallel to an upper surface of the base 2200. The showerhead 2300 may be an aluminum material, wherein the surface is oxidized. A distribution hole 2310 may be formed in the showerhead 2300. The dispensing hole 2310 may be spaced apart from the concentric circumference by a certain distance to uniformly supply the radicals. The plasma in the expanded space 2121 diffuses toward the distribution holes 2310. During this time, charged particles such as electrons or ions are trapped in the showerhead 2300, and neutral particles such as oxygen radicals pass through the distribution holes 2310 and are supplied to the substrate W. In addition, the showerhead may be grounded and form a path for electrons or ions to move.
The plasma excitation unit 2400 generates plasma and supplies the plasma to the chamber 2100. The plasma excitation unit 2400 may be disposed at an upper portion of the chamber 2100. The plasma excitation unit 2400 includes an oscillator 2410, a waveguide 2420, a dielectric waveguide 2430, and a process gas supply unit 2440.
The oscillator 2410 generates an electromagnetic wave. The waveguide 2420 connects the oscillator 2410 with the dielectric waveguide 2430, and provides a path in which an electromagnetic wave generated from the oscillator 2410 is transferred to the dielectric waveguide 2430. The process gas supply unit 2440 supplies a process gas to the upper portion of the chamber 2100. The process gases may be supplied as a first process gas and a second process gas according to the process. The process gas supplied to the dielectric waveguide 2430 is formed into a plasma state by electromagnetic waves. The plasma passes through the dielectric waveguide 2430 and flows to the expansion space 2121.
The plasma excitation unit 2400 is illustrated as using electromagnetic waves. In another embodiment, the plasma excitation unit 2400 may be provided as an inductively coupled plasma excitation unit and a capacitively coupled plasma excitation unit.
Fig. 4 is a view of the load lock chamber before the substrate is brought in.
As shown in fig. 2 and 4, a cover plate 150 is provided in the cover supporting unit 130 before the substrate S is carried into the load lock chamber 40 from the EFEM 20. The cover plate 150 is provided with a square ring or circular shape to correspond to the outer circumference of the substrate S. Therefore, when the cover plate 150 is placed on the upper surface of the substrate S, the outer circumference of the substrate S is covered by the cover plate 150. The inner bottom surface of the cap plate 150 has a shape corresponding to the outer circumference of the base plate S and may include a receiving groove 151. Accordingly, adhesion may be formed between the cover plate 150 and the substrate S. A groove 152 may be formed in the cap plate 150. The groove 152 may correspond to the shape of the upper end of the cover supporting unit 130. When the cap plate 150 is positioned in the cap supporting unit 130, the upper end of the cap supporting unit 130 is positioned in the groove 152, and the cap plate 150 may be prevented from being deviated from the cap supporting unit 130.
Fig. 5 is a view illustrating a state in which a substrate is carried into a load lock chamber in the EFEM.
Referring to fig. 5, the index robot 25 may carry the substrate S processed in the process chamber 60 into the load lock chamber 40. The controller 70 controls the index robot 25 so that the substrate S can be carried into a higher position supported by the substrate support units 110, 120. When the substrate S is disposed perpendicular to the position supportable by the substrate support units 110, 120, the index robot 25 moves downward and enables the substrate S to be positioned at the substrate support units 110, 120.
Fig. 6 is a view showing a pusher which changes the position of the substrate.
Referring to fig. 6, after the substrate S is carried in from the EFEM20, the position of the substrate S may be corrected by the pusher 140. The index robot 25 is set to place the substrate S at the set position. However, the position and the arrangement position of the substrate S may be different while the substrate S is placed on the substrate support units 110, 120. The controller 70 moves the pusher 140 a predetermined distance along the substrate S and may push the substrate S so that it may be located at a correct position. Thereafter, the pusher 140 moves in the opposite direction to the substrate S, and may prevent interference with other components during the movement of the substrate S.
Fig. 7 is a view of disposing the cover plate in the base plate.
Referring to fig. 7, the transfer robot 53 places the cover plate 150 in the substrate S and carries out the substrate from the load lock chamber 40.
The transfer robot 53 is carried into the load lock chamber 40 to place the bottom of the substrate S, and raises and picks up the substrate S. The transfer robot 53 further rises to a set height and places the cover plate 150 in the substrate S. The transfer robot 53 moves along the transfer chamber 50 and moves the substrate S to be processed along the transfer chamber 50.
The transfer areas 41a, 41b for carrying in the substrate S are performed using the cover plate 150 and the substrate S, thereby emptying the cover supporting unit 130. When the substrate S is carried into the transfer chamber 50, the controller 70 stores information of the transfer areas 41a, 41b where the lid support unit 130 is evacuated.
Fig. 8 is a view showing a state in which the transfer robot carries in the substrate to the process chamber. Fig. 9 is a view showing a state in which a substrate is disposed on a susceptor.
Referring to fig. 8 and 9, the substrate S carried out of the load lock chamber 40 is carried into the process chamber 60.
When the substrate S is carried into the process chamber 60, the lift pins 2230 may be raised in the susceptor 2200. After the substrate S is vertically arranged with the susceptor 2200, the transfer robot 53 moves downward. Accordingly, the substrate S is supported by the lift pins 2230, and the transfer robot 53 moves along the transfer chamber 50. When the lift pins 2230 are lifted up downward, the substrate S is placed on the upper surface of the susceptor 2200.
According to an embodiment, the substrate S carried into the process chamber 60 is provided such that the outer circumference thereof is covered by the cover plate 150. Therefore, the phenomenon generated at the outer circumference of the substrate S exposed to the plasma can be prevented or its degree can be reduced. In an example, when the substrate S is positioned in the susceptor 2200, a bottom surface of the outer circumference of the substrate S may not be planar, and thus there may be a gap between the outer bottom surface of the substrate S and the susceptor S. Such a gap may be generated when the substrate S is processed, thereby damaging the substrate S. It may be necessary to process the outer periphery of the substrate S by plasma interruption.
In one embodiment, the cover plate 150 need not be placed on the substrate S in the process chamber 60, thus making it easier to maintain the process chamber 60.
When the substrate S is finished, the substrate S is carried in the reverse order of the substrate S. When the lift pins 2230 are raised, the transfer robot 53 carries out the substrate S placed on the cover plate 150 from the process chamber 60. The controller 70 controls the transfer robot 53 so that the substrate is carried into the transfer areas 41a, 41b without the cover support unit 130. The transfer robot 53 carries the substrate S into the load lock chamber 40 such that the cover plate 150 is arranged perpendicular to the cover supporting unit 130, and places the cover plate 150 and the substrate S on the cover supporting unit 130 and the substrate supporting units 110, 120, respectively. After that, the transfer robot 53 moves to the transfer chamber 50, and the index robot 25 reaches the load lock chamber 40 and carries out the processed substrate S.
The foregoing detailed description may be merely exemplary of embodiments. Moreover, the foregoing illustrates and describes only preferred embodiments, and other embodiments may include various combinations, permutations and environments. That is, it will be appreciated by those skilled in the art that substitutions, modifications and changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents. Furthermore, it is not intended that the scope of the disclosure be limited to these specific embodiments or the specific features or benefits thereof. Rather, it is intended that the scope of the application be limited only to the claims which follow and equivalents thereof.

Claims (19)

1. A substrate processing apparatus, comprising:
an equipment front end module having a load port and an index robot;
a process chamber;
a transfer chamber having a transfer robot for carrying in and out a substrate with respect to the process chamber; and
a load lock chamber located between the transfer chamber and the apparatus front end module and having a substrate supporting unit for supporting a substrate and a cover plate supporting unit for supporting a cover plate covering an outer circumference of the substrate,
the cover plate is placed on the substrate and carried out together with the substrate, and the cover plate supporting unit supporting the cover plate is in an evacuated state.
2. The substrate processing apparatus of claim 1, wherein the substrate supporting unit comprises a first substrate supporting unit for supporting a bottom surface of the substrate.
3. The substrate processing apparatus of claim 1, wherein the substrate supporting unit comprises a second substrate supporting unit for supporting an outer circumference of the substrate.
4. The substrate processing apparatus of claim 1, wherein the cover plate supporting unit is located outside the substrate supporting unit.
5. The substrate processing apparatus of claim 1, wherein the cover supporting unit is positioned such that a top end thereof is higher than a top end of the substrate supporting unit by a predetermined length.
6. The substrate processing apparatus of claim 1, further comprising a pusher located outside the substrate support unit and movable in a lateral direction of a substrate disposed in the substrate support unit.
7. The substrate processing apparatus according to claim 6, wherein a plurality of the pushers are provided to face each other with respect to the substrate.
8. The substrate processing apparatus of claim 1, wherein a plurality of the process chambers are provided and the load lock chamber has a plurality of transfer zones, wherein each of the transfer zones has the substrate support unit and the lid support unit.
9. The substrate processing apparatus of claim 8, wherein each of the transfer regions provides a carry-in path for the substrate to be carried into the transfer chamber from the equipment front end module; and a carrying-out path for carrying out the substrate from the transfer chamber to the front end module.
10. The substrate processing apparatus of claim 8, wherein the number of transfer regions is greater than the number of process chambers.
11. The substrate processing apparatus of claim 1, wherein the process chamber performs a process by plasma.
12. A method of processing a substrate, comprising:
a cover plate supporting unit for setting the cover plate in the loading locking chamber before the substrate is carried into the loading locking chamber;
loading an unprocessed substrate into a load lock chamber;
disposing a cover plate on an outer periphery of the base plate within the load lock chamber;
carrying out the unprocessed substrate provided with the cover plate from the load lock chamber to a transfer chamber; and
and carrying the untreated substrate provided with the cover plate into a process chamber.
13. The substrate processing method of claim 12, wherein providing the cover plate comprises:
vertically aligning the unprocessed substrates in a state where the unprocessed substrates are located under the cover plate disposed in the load lock chamber; and
raising the untreated substrate in the direction of the cover plate.
14. The substrate processing method of claim 13, wherein the cover plate disposed in the load lock chamber is provided to be disposed on a cover plate supporting unit disposed outside a substrate supporting unit for supporting the substrate in the load lock chamber.
15. The substrate processing method of claim 12, wherein the loading of the unprocessed substrate into the load lock chamber is performed by an index robot of a tool front end module; and the setting of the cover plate and the carrying out of the unprocessed substrate from the load lock chamber are performed by a transfer robot of the transfer chamber.
16. The method of claim 12, wherein the process chamber processes the substrate using a plasma.
17. A method of processing a substrate, comprising:
carrying a processed substrate from a transfer chamber into a load lock chamber in which a cover plate supporting unit is evacuated, wherein a cover plate is disposed on an outer circumference of the substrate;
disposing the cover plate in a cover plate supporting unit disposed in the load lock chamber;
disposing the processed substrate in a substrate support unit disposed in the load lock chamber, thereby separating the substrate from the cover plate; and
and carrying out the substrate separated from the cover plate to an equipment front end module.
18. The substrate processing method of claim 17, wherein disposing the lid plate in a lid plate support unit disposed in the load lock chamber comprises:
disposing the processed substrate to an upper side of a cover plate supporting unit disposed in the load lock chamber; and
moving the processed substrate downward.
19. The substrate processing method according to claim 17, wherein the carrying out of the substrate to the apparatus front end module is performed by an index robot provided in the apparatus front end module; and loading the substrate into the load lock chamber and disposing the substrate on the substrate supporting unit are performed by a transfer robot disposed in the transfer chamber.
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SG10201701124TA (en) 2018-06-28

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