CN108091589A - Substrate board treatment and substrate processing method using same - Google Patents
Substrate board treatment and substrate processing method using same Download PDFInfo
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- CN108091589A CN108091589A CN201710611245.1A CN201710611245A CN108091589A CN 108091589 A CN108091589 A CN 108091589A CN 201710611245 A CN201710611245 A CN 201710611245A CN 108091589 A CN108091589 A CN 108091589A
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- substrate
- locking cavity
- chamber
- load locking
- cover board
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
Abstract
The present invention, which provides a kind of substrate board treatment and substrate processing method using same, substrate board treatment of the invention, to be included：Front equipment end module (EFEM), with load port and indexer robot；Processing chamber；Transfer chamber has the transfer robot for moving into or taking out of substrate compared with the processing chamber；And load locking cavity, between the transfer chamber and the front equipment end module (EFEM), and the cover plate support unit with the substrate supporting unit for being used to support substrate and the cover board for being used to support the periphery for covering the substrate.
Description
Technical field
The present invention relates to a kind of substrate board treatment and substrate processing method using sames.
Background technology
In order to manufacture semiconductor device or liquid crystal display, various techniques, such as etch process, ash can be performed on substrate
Chemical industry skill and cleaning.ICP source, long-range plasma source etc. are used as plasma source.
Above-mentioned technique is performed using the device of group type (cluster type).In the device of group type, dress
It carries locking cavity and processing chamber is disposed in around transfer chamber.
In transfer chamber, provided for transmitting the transmission unit of chip between load locking cavity and processing chamber,
Or between one in processing chamber and another in processing chamber.
The content of the invention
One embodiment of the invention provides a kind of substrate board treatment and the processing substrate side for effectively handling substrate
Method.
One embodiment of the invention provides a kind of substrate board treatment and for being handled when the periphery of substrate is capped
The substrate processing method using same of substrate.
The exemplary embodiment of present inventive concept can provide a kind of substrate board treatment, including：Front equipment end module EFEM,
It is with load port and indexer robot；Processing chamber；Transfer chamber has to move into compared with the processing chamber
Or take out of the transfer robot of substrate；And load locking cavity, it is located at the transfer chamber and the front equipment end module
Between EFEM, and there is the substrate supporting unit for being used to support substrate and the cover board for being used to support the periphery for covering the substrate
Cover plate support unit.
In the exemplary embodiment, the substrate supporting unit may include to be used to support the first of the bottom surface of the substrate
Substrate supporting unit.
In the exemplary embodiment, the substrate supporting unit may include the second base for being used to support the periphery of the substrate
Plate support unit.
In the exemplary embodiment, the cover plate support unit is located at the outside of the substrate supporting unit.
In the exemplary embodiment, it is single to can be oriented so that its top is supported than the substrate for the cover plate support unit
The top of member is more higher by a predetermined length.
Exemplary embodiment can further comprise pusher, and the pusher is located at the outside of the substrate supporting unit,
It and can be along the lateral movement for the substrate being arranged in the substrate supporting unit.
In the exemplary embodiment, it is possible to provide multiple pushers are with facing with each other compared with substrate.
In the exemplary embodiment, it is possible to provide multiple processing chambers, and the load locking cavity can have multiple transmission
Region, wherein each transit area has substrate supporting unit and cover plate support unit.
In the exemplary embodiment, each transit area can provide substrate slave device front-end module EFEM and be moved to transmission
The moving-in path of chamber and by substrate from transfer chamber take out of to front equipment end module EFEM take out of road warp.
In the exemplary embodiment, the quantity of transit area is more than the quantity of processing chamber.
In the exemplary embodiment, processing chamber can perform process by plasma-based.
The other embodiment of present inventive concept can provide a kind of substrate processing method using same, including：Untreated substrate is moved into
To load locking cavity；On the periphery for the substrate that cover board is arranged in the load-lock chambers room；It takes out of described untreated
Substrate, wherein the cover board is set to transfer chamber from the load locking cavity；And the untreated substrate is moved into,
Wherein described cover board is set to processing chamber.
In the exemplary embodiment, the cover board is set to may include：Institute is arranged on when the untreated substrate is located at
When stating below the cover board in load locking cavity, the untreated substrate is vertically aligned；And along the cover board side
To the rise untreated substrate.
In the exemplary embodiment, the cover board being arranged in the load locking cavity may be provided as being arranged on lid
In plate support unit, the cover plate support unit is arranged on the base for supporting the substrate in the load locking cavity
The outside of plate support unit.
In the exemplary embodiment, by the untreated substrate be moved to the load locking cavity can be by equipment before
The indexer robot of end module EFEM carries out；And the cover board is set and is taken out of from the load locking cavity described untreated
Substrate can be carried out by the transfer robot of the transfer chamber.
In the exemplary embodiment, plasma-based can be used to handle the substrate for the processing chamber.
The exemplary embodiment of present inventive concept can provide a kind of substrate processing method using same, including：By untreated substrate from
Transfer chamber is moved to load locking cavity and cover board is arranged on the periphery of the substrate；The cover board is set to institute
State the inner space of load locking cavity；Processed substrate is arranged on to the substrate being arranged in the load locking cavity
In support unit；And the substrate is taken out of into front equipment end module EFEM.
In the exemplary embodiment, will may include on the inside of cover board setting to the load locking cavity：By described in
Processed substrate is set to the upside for the cover plate support unit being arranged in the load locking cavity；And by the warp
The substrate of processing moves down.
In the exemplary embodiment, the substrate is taken out of the front equipment end module EFEM can be described by being arranged on
Indexer robot in front equipment end module EFEM carries out；And the substrate is moved to the load locking cavity and is incited somebody to action
The substrate, which is arranged in the support unit, to be carried out by the transfer robot being arranged in the transfer chamber.
The embodiment of present inventive concept can provide a kind of substrate board treatment and for effectively handling at the substrate of substrate
Reason method.
The embodiment of present inventive concept can provide a kind of substrate board treatment and for around substrate be capped when
Handle the substrate processing method using same of substrate.
Description of the drawings
Fig. 1 is the plan view of substrate board treatment according to the embodiment.
Fig. 2 is the view of load locking cavity.
Fig. 3 is the view of the plasma-based module in the processing chamber for may be provided in Fig. 1.
Fig. 4 is the view of the load locking cavity before substrate is moved into.
Fig. 5 is the view for showing to move into substrate in EFEM the state of load locking cavity.
Fig. 6 is the view for showing to change the pusher of the position of substrate.
Fig. 7 is the view by cover board setting in a substrate.
Fig. 8 is to show that substrate is moved to the view of the state of processing chamber by wherein transfer robot.
Fig. 9 is to show that wherein substrate is arranged on the view of the state of pedestal.
The explanation of reference numeral
1：Substrate board treatment；4：Carrier；6：Supporting item；10：Load port；11：First direction；12：Second direction；
20：Front equipment end module (EFEM)；21：Delivery framework；25：Indexer robot；27：Transmission track；30：Process unit；
40：Load locking cavity；41a、41b：Transit area；50：Transfer chamber；53：Transfer robot；60：Processing chamber；70：Control
Device processed；100：Housing；110：Substrate supporting unit (first substrate support unit)；120：Substrate supporting unit (second substrate branch
Support unit)；121：Support slot；130：Cover plate support unit；140：Pusher；150：Cover board；151：Receiving slit；152：Slot；
2100：Chamber；2110：Main body；2111：Venthole；2112：Exhaust line；2120：Sealing cover；2121：Extending space；2210：Partially
Put power；2200：Pedestal；2220：Heater；2230：Lifter pin；2300：Spray head；2310：Dispensing orifice；2400：Plasma-based
Excite unit；2410：Oscillator；2420：Waveguide；2430：Dielectric waveguide；2440：Process gas feed unit；S：Substrate
Specific embodiment
Hereinafter reference will be made to the drawings is more fully described embodiment.However, different forms can be used in embodiment, and should not
It is regarded as being limited to specific embodiment as described herein.On the contrary, these embodiments are provided so that the present invention will be thorough and complete
, and will fully convey the scope to those who have general knowledge in this case technical field.In the accompanying drawings, in order to clear
Chu Qijian and exaggerate shape.
Fig. 1 is the plan view of substrate board treatment according to the embodiment.
With reference to Fig. 1, substrate board treatment 1 includes front equipment end module EFEM 20, processing chamber 30 and controller
70.EFEM 20 and processing chamber 30 are along a direction arranged in series.Hereinafter, by EFEM20 and process chamber
The direction that room 30 is arranged is referred to as first direction 11 and will be referred to as when being watched from top perpendicular to the direction of the first direction 11
Second direction 12.
EFEM 20 includes load port 10 and delivery framework 21.Load port 10 11 is arranged in EFEM along a first direction
Before 20.Load port 10 has multiple supporting items 6.Each supporting item 6 is along 12 arranged in series of second direction, and a substrate
It will be provided in a technique and a carrier 4 (for example, cassette, FOUP etc.) is set.Carrier 4 stores processed substrate W.
In carrier 4, the substrate W that will be provided in process and the substrate W for completing processing are stored.Delivery framework 21 is arranged in load port 10
Between processing chamber 30.Delivery framework 21 is arranged on wherein, and including in load port 10 and process
The indexer robot 25 of substrate W is transmitted between chamber 30.Indexer robot 25 is moved along transmission track 27, the transmission track 27
It is set along second direction 12, and substrate W is transmitted between carrier 4 and processing chamber 30.
Processing chamber 30 includes load locking cavity 40, transfer chamber 50 and processing chamber 60.
Load locking cavity 40 and delivery framework 21 are disposed adjacently.In one example, load locking cavity 40 can be set
Between transfer chamber 50 and EFEM20.Load locking cavity 40 provides a spare space for being sent to processing chamber 60
The substrate W to be provided in the technique before or substrate W for completing processing before being sent to EFEM 20.
Transfer chamber 50 and load locking cavity 40 are disposed adjacently.When being watched from top side, transfer chamber 50 can have
Polygonal body.In one example, when being watched from top side, transfer chamber 50 can have pentagon main body.In the appearance of main body
In face, load locking cavity 40 and multiple processing chambers 60 are arranged along around main body.In each side wall of main body, formed
For the channel (non-icon) that substrate W enters, and the channel connects transfer chamber 50, load locking cavity 40 or processing chamber
60.In each channel, one (not shown) is for opening and closing the passage, so as to seal wherein.Transfer chamber 50
Inner space is provided with to transmit the transfer robot 53 of substrate W between load locking cavity 40 and processing chamber 60.It should
Untreated substrate W in load locking cavity 40 to be loaded in is transmitted to processing chamber 60 or will be complete by transfer robot 53
Substrate W into processing is transmitted to load locking cavity 40.In order to be sequentially provided substrate W in multiple processing chambers 60, substrate W
It is transmitted between processing chamber 60.In the side wall of the transfer chamber 50 of neighbouring EFEM 20, each load locking cavity is arranged
40, and in the rest part of the side wall, arrangement technology chamber 60.
Processing chamber 60 is arranged along around transfer chamber 50.Multiple processing chambers 60 can be provided.It can be in each technique
Substrate W is handled in chamber 60.Processing chamber 60 receives substrate W from transfer robot 53, handles substrate W and by processed base
Plate W is supplied to transfer robot 53.Can be different in the processing that each processing chamber 60 carries out.It is performed by processing chamber 60
Technique can be manufacture semiconductor device or display panel during use substrate W technique.In one example, in process cavity
One or more of room 60 may include the plasma-based module for using plasma-based processing substrate W.
The composition of 70 control base board processing unit 1 of controller.
Fig. 2 is the view of load locking cavity.
With reference to Fig. 2, load locking cavity 40 includes housing 100, substrate S support units 110,120 and cover plate support unit
130。
Housing 100 forms the frame of load locking cavity 40.Housing 100 connects delivery framework 21 and transfer chamber 50.Even
The opening of body contact body 100 and delivery framework 21 (not shown) can be by an opening and closing (not shown).Connect 100 He of housing
The opening (not shown) of transfer chamber 50 can be by an opening and closing (not shown).In a housing 100, wherein by substrate S
Transit area 41a, 41b therein is set to may be provided with multiple quantity.In one example, in a housing 100, transit area 41a,
It is identical or more that the quantity of 41b, which can be set with the quantity of processing chamber 60,.Transit area 41a, 41b can vertically arranged, water
Level land arrangement or both.Transit area 41a, 41b are provided to move into pending substrate and are taken out of the logical of processed substrate
Road.
Substrate supporting unit 110,120 supports the base that load locking cavity 40 is moved to from each transit area 41a, 41b
Plate S.Substrate supporting unit 110,120 includes first substrate support unit 110 and second substrate support unit 120.
The bottom surface of 110 supporting substrate S of first substrate support unit.First substrate support unit 110 can be located at transmission area
The bottom of domain 41a, 41b.First substrate support unit 110 is provided with a shape so that when indexer robot 25, transfer robot
53 prevent interference indexer robot 25, transfer robot 53 when moving into and take out of substrate S.In one example, first substrate supports
Unit 110 may be provided with multiple loading shapes, so as to the bottom surface of supporting substrate S.
In one example, first substrate support unit 110 may be configured as plate shape, so as to the list including being used to support substrate S
Member and the pin for substrate S to be increased to predetermined altitude when indexer robot 25, transfer robot 53 exchange substrate S.
The periphery of 120 supporting substrate S of second substrate support unit.Multiple second substrate support units 120, which can be located at, to be corresponded to
In the outer peripheral position of substrate S.In one example, when substrate S is arranged to square, two or more second substrates support
Unit 120 can be on the edge of substrate S.When substrate S is arranged to circle, two or more second substrate support units
120 can be positioned corresponding to the position of any outer bottom surface of substrate S.Herein, second substrate support unit 120 can circumferentially etc.
It is spaced apart away from ground.
In second substrate support unit 120, the support slot 121 corresponding to the outer bottom surface of substrate S can be formed.Work as substrate
When S is arranged perpendicular to second substrate support unit 120 and moved, substrate S is supported by support slot 121 and is prevented from being offset to outer
Portion.The distance between one outer surface and an outer surface of support slot 121 are formed as being more than a preliminary dimension and a ruler of substrate S
It is very little.Even if there are during error while substrate S and second substrate support unit 120 is arranged vertically, substrate S can still be located at support
In slot 121.
One in first substrate support unit 110 and second substrate support unit 120 can be omitted.Substrate S can be by first
Substrate supporting unit 110 or second substrate support unit 120 support.
Cover plate support unit 130 supports cover board 150 in each transit area 41a, 41b.Cover plate support unit 130 is located at
The outside of substrate supporting unit 110,120, and the substrate S that interference is prevented to be located in substrate supporting unit 110,120.Cover plate support
Unit 130 is located at indexer robot 25, the position of transfer robot 53 that can prevent interference from moving into and taking out of substrate S.It is real one
In example, cover plate support unit 130 can be located at multiple load ports in 110,120 outside of substrate supporting unit or with predetermined
The plate of width.The upper end of cover plate support unit 130 is higher by a predetermined altitude than the upper end of substrate supporting unit 110,120.Cause
This, the cover board 150 supported by cover plate support unit 130 can be located at the substrate S highers than position in substrate supporting unit 110,120
Position.
In the outside of substrate supporting unit 110,120, pusher 140 can be set.Pusher 140 is arranged to face to substrate
The surface of the side surface of S can be moved along substrate S.Multiple pushers 140 can be set to facing with each other compared with substrate S.One
In example, two pushers 140 may be configured as facing with each other or four pushers 140 may be configured as handing over each other based on substrate S
Fork.
Fig. 3 is the view of the plasma-based module in the processing chamber for may be provided in Fig. 1.
With reference to Fig. 3, processing chamber 60 includes chamber 2100, pedestal 2200, spray head 2300 and plasma-based excitation unit 2400.
Chamber 2100 provides the space of substrate processing process.Chamber 2100 includes main body 2110 and sealing cover 2120.Main body
2110 upper surface is open and with an inner space.There is an opening (not shown) to be formed on master at the substrate place of entrance
In the side wall of body 2110, and the opening can be opened and closed by the opening and closing device of a such as slot door (not shown)
It closes.The opening and closing device closes the opening in substrate W when being processed in chamber 2100, and when substrate W is moved to chamber
The opening is opened in 2100 and when being moved to outside.
Venthole 2111 is formed in the bottom wall of main body 2110.Venthole 2111 is connected to exhaust line 2112.Chamber
Pressure in 2100 is controlled by exhaust line 2112, and the byproduct of reaction generated in process is discharged to chamber 2100
It is external.
Sealing cover 2120 is couple to the upper wall of main body 2110, covers open upper surface and the sealed body of main body 2110
2110 inside.The upper end of sealing cover 2120 is connected to plasma-based excitation unit 2400.It is empty that extension is formed in sealing cover 2120
Between 2121.Extending space 2121 broadens when close to spray head 2300.For example, extending space 2121 can be the leakage turned upside down
Bucket shape formula.
Pedestal 2200 is located in chamber 2100.Substrate is placed on the upper surface of pedestal 2200.It, can be in pedestal 2200
Form the cooling path (non-icon) that cooling fluid cycles wherein.Cooling fluid is cycled along cooling path and cooling base
2200.In pedestal 2200, power can be applied from bias power (bias power) 2210 at plasma-based control base board W
Reason.The power applied from bias power 2210 can be radio frequency (Radio Frequency；RF).Pedestal 2200 is by from biasing
The power that power 2210 is supplied forms sheath, and can form high-density electric slurry, so as to improve technological ability.
Heater 2220 can be provided in pedestal 2200.In one embodiment, heater 2220 can be hot line.
Substrate W is heated to predetermined temperature by heater 2220.
Spray head 2300 is couple to the upper wall of main body 2110.Spray head 2300 has circular shape, and can be parallel to
The upper surface arrangement of pedestal 2200.Spray head 2300 can be aluminum material, and wherein surface is oxidized.Dispensing orifice 2310 can be formed
In spray head 2300.Dispensing orifice 2310 can be spaced a distance equably to supply free radical with concentric circumferences.Expanding
Plasma-based diffusion in exhibition space 2121 flows to dispensing orifice 2310.During this period, captured in spray head 2300 such as electronics or from
The charged particle of son, and the neutral particle of such as oxygen radical through dispensing orifice 2310 and is provided to substrate W.In addition, spray
Head can be grounded and form electronics or ion movement path.
Plasma-based excitation unit 2400 generates plasma-based and is fed to chamber 2100.Plasma-based excitation unit 2400 can be arranged on chamber
The top of room 2100.Plasma-based excitation unit 2400 includes oscillator 2410, waveguide 2420, dielectric waveguide 2430 and process gas
Feed unit 2440.
Oscillator 2410 generates electromagnetic wave.Oscillator 2410 is connected by waveguide 2420 with dielectric waveguide 2430, and is provided
The electromagnetic wave generated from oscillator 2410 is wherein transferred to the access of dielectric waveguide 2430.Process gas supply unit 2440 will
Process gas is fed to the top of chamber 2100.Process gas can be supplied as the first process gas and the second process gas according to technique
Body.The process gas of dielectric waveguide 2430 is provided by electromagnetic waveforms into plasma-based state.Plasma-based passes through dielectric waveguide 2430 simultaneously
It flow to extending space 2121.
Plasma-based excitation unit 2400 is illustrated as using electromagnetic wave.In another embodiment, plasma-based excitation unit 2400 can
To be provided as inductive coupling plasma-based excitation unit and capacitive coupling plasma-based excitation unit.
Fig. 4 is the view of the load locking cavity before substrate is moved into.
As shown in Figure 2 and Figure 4, before substrate S is moved to load locking cavity 40 from EFEM 20, cover board 150 is carried
For in lid support unit 130.Cover board 150 is provided with Q-RING or circular shape, to correspond to the periphery of substrate S.Therefore, when
When cover board 150 is placed on the upper surface of substrate S, the periphery of substrate S is covered by cover board 150.The shape of the inner bottom surface of cover board 150
Shape corresponds to the periphery of substrate S, and may include receiving slit 151.Therefore, it can be formed and sticked between cover board 150 and substrate S.
Slot 152 can be formed in cover board 150.Slot 152 can correspond to the shape of the upper end of lid support unit 130.When cover board 150
When in lid support unit 130, the upper end of lid support unit 130 is located in slot 152, and can prevent 150 offset from cover of cover board
Supporting item unit 130.
Fig. 5 is the view for showing to move into substrate in EFEM the state of load locking cavity.
With reference to Fig. 5, the substrate S handled in processing chamber 60 can be moved to load locking cavity 40 by indexer robot 25
In.Controller 70 controls indexer robot 25 so that substrate S can be moved to by the support of substrate supporting unit 110,120 more
High position.When substrate S perpendicular to can by substrate supporting unit 110,120 support location arrangements when, index robot 25 to
Lower movement, and substrate S is enable to be located at substrate supporting unit 110,120.
Fig. 6 is the view for showing to change the pusher of the position of substrate.
It, can be by the position of 140 correction substrate S of pusher after substrate S is moved into from EFEM20 with reference to Fig. 6.Index
Robot 25 is set to substrate S being placed on installation position.However, substrate S is being placed into substrate supporting unit 110,120
Meanwhile substrate S position and installation position can be different.Pusher 140 is moved preset distance by controller 70 along substrate S,
And it can promote substrate S that it is allowd to be located at correct position.Afterwards, pusher 140 is with the direction shifting anti-with substrate S-phase
It is dynamic, and can prevent during moving substrate S with other component interferences.
Fig. 7 is the view by cover board setting in a substrate.
With reference to Fig. 7, cover board 150 is placed in substrate S by transfer robot 53, and takes out of base from load locking cavity 40
Plate.
Transfer robot 53 is moved in load locking cavity 40 to place the bottom of substrate S, raises and picks up substrate
S.Transfer robot 53 further rises to setting height, and cover board 150 is placed in substrate S.Transfer robot 53 along
Transfer chamber 50 moves and moves the substrate S that will be handled along transfer chamber 50.
Transit area 41a, 41b for being carried in substrate S are performed using cover board 150 and substrate S, so that lid support
Unit 130 is emptying.When substrate S is moved to transfer chamber 50, controller 70 stores the transmission that lid support unit 130 is drained
The information of region 41a, 41b.
Fig. 8 is to show that substrate is moved to the view of the state of processing chamber by wherein transfer robot.Fig. 9 is to show wherein
Substrate is arranged on the view of the state of pedestal.
With reference to Fig. 8 and Fig. 9, it is moved to from the substrate S that load locking cavity 40 takes out of in processing chamber 60.
When substrate S is moved in processing chamber 60, lifter pin 2230 can raise in pedestal 2200.Substrate S with
After pedestal 2200 is arranged vertically, transfer robot 53 moves down.Therefore, substrate S is supported by lifter pin 2230, transmits machine
People 53 moves along transfer chamber 50.When lifter pin 2230 rises downwards, substrate S is placed on the upper surface of pedestal 2200.
According to embodiment, the substrate S being moved in processing chamber 60 is provided such that its periphery is covered by cover board 150.
Accordingly it is possible to prevent it can be lowered exposed to phenomenon or its degree caused by the periphery of the substrate S of plasma-based.In one example,
When substrate S is located in pedestal 2200, the bottom surface of the periphery of substrate S can not be plane, thus substrate S outer bottom with
There may be gaps between pedestal S.When handling substrate S, such gap may be generated, so as to damaged substrate S.Therefore may
Need the periphery by plasma-based blocking processing substrate S.
In one embodiment, cover board 150 need not be placed on the substrate S in processing chamber 60, therefore be easier to tie up
Hold processing chamber 60.
When substrate S completes to handle, substrate S is carried out with the order anti-with moving into substrate S-phase.When lifter pin 2230 raises
When, transfer robot 53 takes out of the substrate S being seated on cover board 150 from processing chamber 60.Controller 70 controls transfer robot
53 so that substrate is moved in transit area 41a, 41b of not lid support unit 130.Transfer robot 53 removes substrate S
Enter to load locking cavity 40 so that cover board 150 is arranged vertically with lid support unit 130, and cover board 150 and substrate S are divided
Lid support unit 130 and substrate supporting unit 110,120 are not placed on.Afterwards, transfer robot 53 is moved to transfer chamber 50,
And indexer robot 25 reaches load locking cavity 40 and takes out of processed substrate S.
Foregoing detailed description can be only the example of embodiment.In addition, the above is only shown and describes preferably in fact
Example is applied, and other embodiment can include various combinations, change and environment.This has in the technical field of the invention
The personnel of usual knowledge will be understood that, without departing substantially from the principle and spirit that its scope is limited by the appended claims and its equivalent
In the case of, these embodiments can be replaced, modifications and changes.In addition, being not intended to scope of the present application is limited to these
Specific embodiment or its specific features or benefit.On the contrary, be intended to by scope of the present application be only limitted to the right followed now will
Ask book and its equivalent.
Claims (19)
1. a kind of substrate board treatment, including：
Front equipment end module, with load port and indexer robot；
Processing chamber；
Transfer chamber has the transfer robot for moving into or taking out of substrate compared with the processing chamber；And
Load locking cavity between the transfer chamber and the front equipment end module, and has and is used to support substrate
Substrate supporting unit and be used to support the periphery for covering the substrate cover board cover plate support unit.
2. substrate board treatment according to claim 1, wherein the substrate supporting unit includes being used to support the base
The first substrate support unit of the bottom surface of plate.
3. substrate board treatment according to claim 1, wherein the substrate supporting unit includes being used to support the base
The second substrate support unit of the periphery of plate.
4. substrate board treatment according to claim 1, wherein the cover plate support unit is located at substrate support list
The outside of member.
5. substrate board treatment according to claim 1, wherein the cover plate support unit is positioned such that its top
Top than the substrate supporting unit is more higher by a predetermined length.
6. substrate board treatment according to claim 1, further comprises pusher, the pusher is located at the base
The outside of plate support unit, and can be along the lateral movement for the substrate being arranged in the substrate supporting unit.
7. substrate board treatment according to claim 6, wherein providing multiple pushers with compared with the substrate
It is facing with each other.
8. substrate board treatment according to claim 1, wherein multiple processing chambers are provided, and the load lock
Chamber has multiple transit areas, wherein each transit area has the substrate supporting unit and the cover plate support list
Member.
9. substrate board treatment according to claim 8, wherein each transit area provides the substrate from described
Front equipment end module is moved to the moving-in path of the transfer chamber；And by the substrate from the transfer chamber take out of to
The front equipment end module takes out of road warp.
10. substrate board treatment according to claim 8, wherein the quantity of the transit area is more than the processing chamber
Quantity.
11. substrate board treatment according to claim 1, wherein the processing chamber performs process by plasma-based.
12. a kind of substrate processing method using same, comprises the following steps：
Untreated substrate is moved to load locking cavity；
On the periphery for the substrate that cover board is arranged in the load-lock chambers room；
The untreated substrate is taken out of, wherein the cover board is set to transfer chamber from the load locking cavity；And
The untreated substrate is moved into, wherein the cover board is set to processing chamber.
13. substrate processing method using same according to claim 12, being provided with the cover board includes：
When the untreated substrate is located at below the cover board being arranged in the load locking cavity, vertically arrange
Arrange the untreated substrate；And
The untreated substrate is raised along the cover board direction.
14. substrate processing method using same according to claim 13 is provided with the lid in the load locking cavity
Plate is provided as being arranged in cover plate support unit, and the cover plate support unit is arranged in the load locking cavity
The outside of the substrate supporting unit of the middle support substrate.
15. substrate processing method using same according to claim 12, wherein the untreated substrate is moved to the loading
Locking cavity is carried out by the indexer robot of front equipment end module；And the cover board is set and from the load locking cavity
The untreated substrate is taken out of by the transfer robot of the transfer chamber to carry out.
16. substrate processing method using same according to claim 12, wherein the processing chamber handles the substrate using plasma-based.
17. a kind of substrate processing method using same, comprises the following steps：
Untreated substrate is moved to load locking cavity from transfer chamber and cover board is arranged on to the periphery of the substrate
On；
The cover board is set to the inner space of the load locking cavity；
Processed substrate is arranged in the substrate supporting unit being arranged in the load locking cavity；And
The substrate is taken out of into front equipment end module.
18. substrate processing method using same according to claim 17, wherein setting the cover board to the load locking cavity
Inner space include：
The processed substrate is set to the upside for the cover plate support unit being arranged in the load locking cavity；With
And
The processed substrate is moved down.
19. substrate processing method using same according to claim 17, wherein the substrate is taken out of the front equipment end module
It is carried out by the front equipment end mould indexer robot in the block is arranged on；And the substrate is moved to the load lock
Determine chamber and the substrate is arranged in the substrate supporting unit by the transmission machine being arranged in the transfer chamber
People carries out.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0155070 | 2016-11-21 | ||
| KR1020160155070A KR101754589B1 (en) | 2016-11-21 | 2016-11-21 | Substrate treating apparatus and substrate treating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108091589A true CN108091589A (en) | 2018-05-29 |
| CN108091589B CN108091589B (en) | 2021-10-26 |
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| CN201710611245.1A Active CN108091589B (en) | 2016-11-21 | 2017-07-25 | Substrate processing apparatus and substrate processing method |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101754589B1 (en) |
| CN (1) | CN108091589B (en) |
| SG (1) | SG10201701124TA (en) |
| TW (1) | TWI631642B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112151412A (en) * | 2019-06-26 | 2020-12-29 | 细美事有限公司 | Transfer robot and substrate processing apparatus having the same |
| CN112687598A (en) * | 2019-10-17 | 2021-04-20 | 细美事有限公司 | Substrate transfer apparatus and substrate processing apparatus |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994358B (en) * | 2017-12-29 | 2021-04-27 | 中微半导体设备(上海)股份有限公司 | Plasma processing system and operation method thereof |
| KR102139934B1 (en) * | 2018-02-21 | 2020-08-03 | 피에스케이홀딩스 (주) | Substrate processing apparatus, load lock chamber thereof and method for operating the apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN108091589B (en) | 2021-10-26 |
| TWI631642B (en) | 2018-08-01 |
| KR101754589B1 (en) | 2017-07-10 |
| TW201820501A (en) | 2018-06-01 |
| SG10201701124TA (en) | 2018-06-28 |
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