TW201735091A - Quad chamber and platform having multiple quad chambers - Google Patents

Abstract

A method and apparatus for processing substrates includes a chamber defining a plurality of processing regions, a heater disposed centrally within each pair of processing regions, each heater having a first major surface and a second major surface opposing the first major surface, each of the first major surfaces defining a first substrate receiving surface and each of the second major surfaces defining a second substrate receiving surface, and a showerhead positioned in an opposing relationship to each of the first substrate receiving surfaces and each of the second substrate receiving surfaces of the heaters.

Description

Four chambers and workbench with multiple sets of four chambers

Embodiments of the present disclosure are generally related to semiconductor substrate processing and, more particularly, to etching and plasma related semiconductor substrate fabrication processes and associated hardware.

The wafer fabrication facility consists of a wide range of technologies. In a facility that processes or inspects a substrate, a cassette containing a semiconductor substrate (eg, a wafer) is wound to a plurality of stations. Semiconductor processing generally involves depositing material on and removing ("etching" and/or "polishing") materials from the substrate. Typical processes include chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), physical vapor deposition (PVD), electroplating, chemical mechanical polishing (CMP), etching, and the like.

One consideration in semiconductor processing is the productivity of the substrate. In general, the higher the substrate productivity, the lower the manufacturing cost, and the lower the cost of processing the substrate. In order to increase substrate processing productivity, conventional batch processing chambers have been developed. Batch processing allows several substrates to simultaneously use common fluid processing, such as process gases, chambers, processing, and the like, thereby reducing instrument costs and increasing productivity. Ideally, the batch processing system exposes each substrate to the same processing environment whereby each substrate simultaneously receives the same process gas and plasma density for consistent processing of the batch. Unfortunately, the processing within the batch processing system is difficult to control so that consistent processing occurs with respect to each substrate. As a result, it is well known that batch processing systems are inconsistent substrate processing. In order to achieve better process control, a single chamber substrate processing system was developed that was processed on a single substrate in an isolated processing environment one at a time. Unfortunately, single chamber substrate processing systems are generally not capable of providing high production rates as in batch processing systems because each substrate must be processed sequentially.

Accordingly, with the need for a substrate processing system, the substrate processing system is configured to provide consistency in control of a single substrate system and improved productivity characteristics of a batch processing system.

Embodiments of the present disclosure generally provide a substrate processing system having one or more chambers, each chamber capable of processing four substrates. The one or more chambers include a plurality of processing zones and a heater disposed centrally within each of the processing zones. Each heater includes a dish member having a first major surface and a second major surface, the second major surface being opposite the first major surface. Each of the first major surfaces defines a first substrate receiving surface and each of the second major surfaces defines a second substrate receiving surface. Each heater can be an electrostatic or vacuum clamp configured to clamp the substrate to the major surfaces of the substrate. Each heater can be an electrode for generating RF plasma within an individual chamber. Each chamber includes two showerheads configured to flow a precursor gas toward a substrate disposed on an individual heater, the substrates being placed between the showerheads. In some embodiments, the heater in each of the two processing zones functions as a single electrode that interacts with the two showerheads. Each heater is fixed relative to the chambers, but the showerhead is movable relative to the heater in each chamber. The substrate can be transported into or out of the processing region by a robotic blade that is configured to grasp the edge of the substrate or the major surface of the substrate with electrostatic attraction.

A method and apparatus for processing a substrate is disclosed and can include a chamber defining a plurality of processing regions, a heater disposed centrally in each pair of processing regions, each heater having a first major surface and a second a primary surface, the second major surface being opposite the first major surface, each first major surface defining a first substrate receiving surface and each second major surface defining a second substrate receiving surface, and a showerhead to The shower head is placed in an opposing relationship between each of the first substrate receiving surfaces of the heaters and each of the second substrate receiving surfaces.

In another embodiment, a quad processing chamber system is provided and includes a first four processing chamber defining a first plurality of isolated processing regions, including: a first substrate support And a second substrate support disposed in the first four processing chamber; a first gas distribution assembly, the first gas distribution assembly disposed in a first processing region and a second processing region of the plurality of isolation processing regions And a second gas distribution component disposed in a third processing region of the plurality of isolation processing regions and an upper end and a lower portion of the fourth processing region At the end, wherein each of the gas distribution assemblies is independently movable relative to the individual substrate support.

Embodiments of the present disclosure generally provide a plasma processing system adapted to process a plurality of substrates simultaneously. The substrate processing system is configured to combine the advantages of a single substrate processing chamber and multiple substrate handling for high quality substrate processing, high substrate throughput, and reduced system footprint.

1A and 1B are diagrammatically illustrated above and below plan views, and FIG. 2 illustrates a perspective view of an exemplary four-chamber system 100. System 100 can be used to perform a deposition process, an etch process, an anneal process, or other heat treatment, or a combination thereof. System 100 generally includes the necessary processing facilities itself, supported on primary frame structure 105 (shown in Figure 2). System 100 can be easily installed and provides a quick start for operation.

The system 100 generally includes four different zones, referred to as a front end step area 110, a load lock chamber 112, and a transfer chamber 114 that communicates with a plurality of four process chambers 115 via an isolation valve 120. Each of the four processing chambers 115 can be configured to process four substrates simultaneously or nearly simultaneously such that the system 100 can process 12 substrates simultaneously or nearly simultaneously.

The front end step area 110 (generally known as a factory interface or micro environment) generally includes an enclosure having, for example, at least one substrate-containing cassette 125 placed to communicate via a box loader. System 100 can also include one or more front end substrate transfer robots 130, generally a single arm robot, configured to move the substrate between front end step area 110 and load lock chamber 112. The front end substrate transfer robot 130 is typically placed proximate the cassette 125 and configured to remove the substrate from the cassette 125 for processing, and to place the substrate in the cassette 125 once the processing substrate is completed.

The front end step area 110 selectively communicates with the load lock chamber 112 via, for example, a select actuation valve (not shown). In addition, the load gate 112 can also selectively communicate with the transfer chamber 114, such as via another select actuation valve. Accordingly, during the process of transferring one or more substrates into the transfer chamber 114 for processing, the load lock chamber 112 is operable to isolate the interior of the substrate transfer chamber 114 from the interior of the front end stepped area 110. The load lock chamber 112 can be, for example, a side-by-side substrate type chamber, a single substrate type chamber, or a multi-substrate type load lock chamber, as is known in the art.

System 100 includes a facility supply unit 135 (shown in FIG. 2) that can be placed in any location generally in proximity to system 100. However, in order to maintain a small bottom area, the facility supply unit 135 may be disposed below the load lock chamber 112. The facility supply unit 135 typically houses support facilities required for operation of the system 100, such as gas panels, power distribution panels, power generators, and other components that are used to support semiconductor etching processes. The facility supply unit 135 typically includes RF power, bias power, and electrostatic power sections for the four processing chambers 115.

System 100 can include a process controller 138 to control one or more substrate processing functions. In one embodiment, the processing controller 138 includes a computer or other controller that is adapted to analyze and display the data input/output signals of the system 100. Processing controller 138 can display data on an output device (eg, a computer monitor screen). In general, the processing controller 138 includes a controller, such as a programmable logic controller (PLC), a computer, or other microprocessor-based controller. The processing controller 138 can include a central processing unit (CPU) in electrical communication with the memory, wherein the memory includes a substrate processing program that provides control of at least a portion of the system 100 when the CPU executes the substrate processing program. Accordingly, processing controller 138 can receive inputs from various components of system 100 and generate control signals that can be communicated to individual components of system 100 to control the operation of such components.

As illustrated in FIG. 1A, the substrate transfer robot 140 can be placed in the center of the upper inner portion of the transfer chamber 114. The substrate transfer robot 140 is generally configured to receive a substrate from the load lock chamber 112 and transport one of the four processing chambers 115 received from the substrate of the load lock chamber 112 to the periphery of the transfer chamber 114. . In addition, substrate transfer robot 140 is generally configured to transfer substrates between individual four processing chambers 115 and to transfer substrates from four processing chambers 115 back into loading gate chamber 112. The substrate transfer robot 140 generally includes a single four blade 145 having four substrate support members 148 that are configured to simultaneously support up to four substrates 150 on the substrate support member 148 (shown only in Figures 1A and 1B) Two). For example, the blade 145 can include two substrate support members 148 that are vertically stacked, and each of the two substrate support members 148 is generally aligned in an individual horizontal plane. The substrate support member 148 can have an edge grip configuration to maintain the substrate 150 on the substrate support member 148. Additionally, the blades 145 of the substrate transfer robot 140 are selectively extendable while the base is rotatable, allowing the blades to access any of the interior portions of the four processing chambers 115, the load lock chamber 112, and/or any other A chamber placed around the periphery of the transfer chamber 114.

As illustrated in FIG. 1B, the substrate transfer robot 140 can be placed in the center of the lower inner portion of the transfer chamber 114. The substrate transfer robot 140 is generally configured to receive a substrate from the load lock chamber 112 and transport one of the four processing chambers 115 received from the substrate of the load lock chamber 112 to the periphery of the transfer chamber 114. . In addition, substrate transfer robot 140 is generally configured to transfer substrates between individual four processing chambers 115 and to transfer substrates from four processing chambers 115 back into loading gate chamber 112. The substrate transfer robot 140 generally includes a single four blade 145 having four substrate support members 148 that are configured to simultaneously support up to four substrates 150 on the substrate support member 148 (only two are shown in Figure 1B) ). For example, the blade 145 can include two substrate support members 148 that are vertically stacked, and each of the two substrate support members 148 is generally aligned in an individual horizontal plane. The substrate support member 148 can have an edge grip configuration to maintain the substrate 150 on the substrate support member 148. Additionally, the blades 145 of the substrate transfer robot 140 are selectively extendable while the base is rotatable, allowing the blades to access any of the interior portions of the four processing chambers 115, the load lock chamber 112, and/or any other A chamber placed around the periphery of the transfer chamber 114.

3A and 3B are various views of one embodiment of a four processing chamber 300 that can be used as one or more of the four processing chambers 115 of FIGS. 1A, 1B, and 2. 3A is a side cross-sectional view of the four processing chamber 300, and FIG. 3B is a perspective cross-sectional view of a portion of the four processing chamber 300 of FIG. 3A.

The four processing chambers 300 include a first processing chamber 302A coupled to a second processing chamber 302B, and each of the first processing chamber 302A and the second processing chamber 302B are configured to process two simultaneously or nearly simultaneously Substrate 150. The first processing chamber 302A and the second processing chamber 302B can operate in parallel such that up to four substrates are similarly processed in the same amount of time. Thus, the four processing chambers 300 increase productivity by at least two times while minimizing system floor area, such as systems 100 of Figures 1A, 1B, and 2.

The four processing chambers 300 include a plurality of processing volumes 305A through 305D contained within the chamber body 310. The four processing chambers 300 include two substrate supports 315, each of which supports two substrates on the substrate support 315 on a major surface of the substrate support 315. Each of the processing volumes 305A and 305B shares one of the substrate supports 315, and each of the processing volumes 305C and 305D shares the other of the substrate supports 315. The four processing chambers 300 include four gas distribution plates or showerheads 320. Each of the showerheads 320 is disposed in an individual processing volume 305A through 305D. The chamber body 310 includes a cover plate 325 and a wall 330 containing process volumes 305A through 305D. In some embodiments, the cover plate 325 can be hinged such that the showerhead 320 can be placed in a clamshell manner away from the substrate support 315 to facilitate substrate transfer. The suction channel 340 at least partially surrounds the processing volumes 305A-305D. Suction channel 340 is symmetric about the circumference of dual processing volumes 305A and 305B and dual processing volumes 305C and 305D. Suction channel 340 is in fluid communication with processing volumes 305A-305D and central channel 345, which is coupled to vacuum pump 350. The suction may be circumferential from the exterior of the face of the showerhead 320, but through the labyrinth structure such that deposition in or on the panels and/or openings in the showerhead 320 does not land on the substrate 150.

One or more valves 355 can control the dual processing volumes 305A and 305B and the conductive paths within the dual processing volumes 305C and 305D. When the four processing chambers 300 are shown to orient the substrate 150 in a horizontal plane, the chamber body 310 can be oriented such that the substrate 150 is processed vertically.

Process gas supply 392 is also shown in FIG. 3A, and process gas supply 392 provides precursor gas to each of process volumes 305A through 305D. Process gas supply 392 can be coupled to gas flow separation device 393 that is configured to control gas flow to each of process volumes 305A-305D. In some embodiments, gas flow separation device 393 includes a gas flow controller 395 and/or a gas flow meter 397. Gas flow meter 397 and gas flow controller 395 can be used to control gas flow between each of a plurality of processing regions (e.g., processing volumes 305A through 305D). In some embodiments, gas flow separation device 393 includes flow impedance element 399 to provide gas flow substantially equivalent to each of a plurality of processing regions (eg, processing volumes 305A-305D).

In FIG. 3B, the first processing chamber 302A of the four processing chambers 300 is described in more detail. However, the second processing chamber 302B can be configured to be similar to the first processing chamber 302A.

In one embodiment, the substrate support 315 can be cantilevered to the wall 330 of the chamber body 310 by a fastener (not shown). In some embodiments, the substrate support 315 branches off the first processing chamber 302A such that the processing volumes 305A and 305B are substantially equal in size. The substrate support 315 includes a first major surface 362 and an opposite second major surface 364, each of the first major surface 362 and the second major surface 364 configured to receive and secure the substrate 150 on the surfaces.

In one aspect, the substrate support 315 includes a heater 360. Optionally, or in addition, substrate support 315 is coupled to power source 366 to function as an electrostatic chuck. In one example, the substrate support 315 is a bipolar clamp that selectively clamps the substrate 150 over the respective first major surface 362 and second major surface 364. In other embodiments, the substrate support 315 can be a heated vacuum clamp that selectively sandwiches the substrate 150 over the respective first major surface 362 and second major surface 364. Processing controller 138 (shown in FIG. 1B) can be coupled to four processing chambers 300 (shown in FIG. 3A) to control substrate processing parameters in individual processing volumes 305A through 305D (shown in FIG. 3A). . Processing controller 138 can be used to control RF power and/or tune RF power to each of processing volumes 305A-305D. For example, the processing controller 138 can be an RF tuning device that can be utilized to lock the output signal of an RF power source (eg, the power source 374 shown in FIG. 3B). The processing controller 138 can also be utilized to lock the output frequency of each of the RF power sources using at least one of phase lock and frequency lock. Process controller 138 can be utilized to control actuation of valve 355. Processing controller 138 may also be utilized to control the temperature of substrate support 315, such as such functionality.

Each of the showerheads 320 includes a perforated plate having an opening 370 in the output face 372 (eg, a panel). Each of the output faces 372 is opposite the first major surface 362 and the second major surface 364 of the substrate support 315. Each of the showerheads 320 can be made of a conductive material, such as a metal, and can function as electrodes within the processing volumes 305A and 305B. The showerhead 320 can be coupled to a power source 374 that can be a radio frequency application and utilized to form a plasma of process gas between the output face 372 and the substrate support 315. Thus, the substrate support 315 can be made of a conductive material to function as an electrode shared by the showerhead 320.

Each of the showerheads 320 can be coupled to a translation system 376 that moves the individual perforated plates relative to the first major surface 362 and the second major surface 364 of the substrate support 315. The translation system 376 can include an actuator 378 that controls the spacing between the output surface 372 and the first major surface 362 and the second major surface 364 of the substrate support 315. In one example, the actuator 378 can be coupled to the cover cover 380 by a rod 382. The rod 382 can be a threaded member coupled to the ring 384 that maintains the orientation of the showerhead 320 during movement. For example, the ring 384 can be coupled to the actuator 378 by the support member 385, and the one or more guide bars 386 interface with the ring 384 during movement of the showerhead 320. The support member 385 can also be coupled using a central shaft member 388 that is disposed in an opening 390 in the cover cover panel 380. The central shaft member 388 can be secured to the showerhead 320. The central shaft member 388 can also serve as a gas conduit for the showerhead 320 such that gas from the process gas supply 392 can be delivered to the showerhead 320. In some embodiments, the first processing chamber 302A can include an RF shield 394 (shown in FIG. 3A) placed between the first processing chamber 302A and the second processing chamber 302B. The RF shield 394 can comprise a material that is adapted to absorb or reflect RF energy. For example, the RF shield 299 can comprise a metal, such as steel and aluminum, and can also comprise an electromagnetically isolating material.

4 is a perspective view of one embodiment of a substrate support member 400 that can be used for the substrate support member 148 in the transfer chamber 114 of FIGS. 1A, 1B, and 2. The substrate support member 400 includes support arms 405, each having one or more edge grip members 410. While only two edge grip members 410 are shown, the substrate support member 400 can include more edge grip members 410, such as three edge grip members 410. One or both of the support arm 405 and the edge grip member 410 can move laterally (toward and away from the edge of the substrate 150) in the direction of the arrow. In other embodiments, the edge gripping member 410 can be a clamping device that selectively engages the edge of the substrate 150.

The support arm 405 includes a first surface 415 and a second surface 420 relative to the first surface 415. Similarly, the edge gripping member 410 includes a first surface 425 and an opposing second surface 430. Depending on whether the substrate support member 400 transports the substrate 150 to the first major surface 362 or the second major surface 364 of the substrate support 315 (both shown in FIG. 3B), the individual planes of the first surface 415 and the second surface 420 and The plane of the first surface 425 and the second surface 430 does not extend beyond the plane of the first major surface 435 or the second major surface 440 of the substrate 150. For example, if the substrate 150 is to be placed or removed from the second major surface 364 of the substrate support 315 (shown in FIG. 3B), the first surface 415 of the support arm 405 and the first surface 425 of the edge grip member 410 The plane of the first major surface 435 of the substrate 150 is coplanar or slightly recessed from the plane of the first major surface 435 (as shown in Figure 4 below). In some embodiments (not shown), the first major surface 362 and the second major surface 364 of the substrate support 315 (both shown in FIG. 3B) may include depressions corresponding to the location of the edge grip members 410 or The slit receives the surface of the substrate support 315 around the circumference of the substrate 150. The recess or slit is configured to allow spacing for the edge gripping member 410 such that the plane of the first surface 425 and/or the second surface 430 of the edge gripping member 410 does not contact the first major surface 435 or the second of the substrate 150 The main surface 440 supports the substrate 150 when it is coplanar.

5A and 5B are various views of the processing chamber 500, showing an example of substrate transfer processing using the substrate supporting member 400 of Fig. 4. The processing chamber 500 can be the first processing chamber 302A or the second processing chamber 302B of the four processing chambers 115 of Figure 3A. The depicted processing chamber 500 is part of the four processing chambers 115 of Figure 3A and includes two processing volumes, such as a first processing volume 505A and a second processing volume 505B. Although another processing chamber of four processing chambers 115 is not shown, the substrate transfer processing described in Figures 5A and 5B can be similar to and/or occur simultaneously to another processing chamber coupled to processing chamber 500.

FIG. 5A is a schematic cross-sectional view of the processing chamber 500. FIG. 5B is a schematic isometric cross-sectional view of the processing chamber 500. The substrate 150 is shown on the first major surface 362 of the substrate support 315. The display substrate support member 400 extends into the first processing volume 505A via the substrate transfer cassette 510. The support arm 405 (only one shown in FIG. 5B) surrounds the peripheral edge portion of the substrate 150 (which can be grasped at the substrate 150).

6A to 6D are various views of the processing chamber 500, showing another example of the substrate transfer process using the substrate supporting member 400 of Fig. 4. Although another processing chamber of the four processing chambers 115 of FIG. 3A is not shown, the substrate transfer processing described in FIGS. 6A and 6B can be similar to and/or occur simultaneously to another processing coupled to the processing chamber 500. Chamber.

6A and 6B are schematic cross-sectional views of the processing chamber 500 in which the substrate 150 is supported on the substrate supporting member 400. The substrate support member 400 enters the processing volume 505B in the X direction as shown via the substrate transfer cassette 510. The back side 600 of the substrate 150 is slightly spaced (in the Z direction) from the second major surface 364 of the substrate support 315 such that the substrate 150 does not contact the substrate support 315.

6C is a schematic cross-sectional view of the processing chamber 500, and FIG. 6D is a schematic isometric cross-sectional view of the processing chamber 500. In FIG. 6C, the substrate support 315 is energized (eg, electrostatically or with a vacuum applied) such that the substrate is attracted to the second major surface 364 of the substrate support 315. The edge gripping member 410 (showing only one) releases the substrate 150 and the substrate 150 is effectively clamped onto the second major surface 364 of the substrate support 315, as shown in Figure 6D. Although not shown, the substrate can be transferred to the first major surface 362 of the substrate support 315 while the substrate 150 is transferred onto the second major surface 364. After the substrate 150 is clamped, the substrate support member 400 can be retracted away from the processing chamber 500 via the substrate transfer cassette 510. The substrate can be sealed to transport 埠 510 and processing can begin. Moreover, although not shown, other processing volume substrates for the four processing chambers (eg, four processing chambers 115 of FIG. 3A) can be simultaneously transferred to all processing volumes. The transfer process from the process volume removal process substrate can be a substantial reversal of the process described in Figures 6A through 6D. The removal process is performed at the same time.

Other embodiments of the present disclosure may be modified without departing from the basic scope, and the scope is determined by the scope of the appended claims.

100‧‧‧System 105‧‧‧Main frame structure 110‧‧‧ Front step area 112‧‧‧Loading chamber 114‧‧‧Transport chamber 115‧‧‧4 Processing chamber 120‧‧‧Insulation valve 125‧ ‧‧卡匣130‧‧‧ Front-end substrate transfer robot 135‧‧‧ Facilities supply unit 138‧‧‧Processing controller 140‧‧‧Substrate transfer robot 145‧‧‧ Blades 148‧‧‧Substrate support members 150‧‧ ‧Substrate 299‧‧‧RF Shielding 300‧‧‧4 Processing Chamber 302A‧‧‧First Processing Chamber 302B‧‧‧Second Processing Chamber 302C‧‧‧ Third Processing Chamber 302D‧‧‧ Fourth Treatment Chamber 305A-305D‧‧ ‧ treatment volume 310‧‧ ‧ chamber body 315‧‧ ‧ substrate support 320 ‧ ‧ sprinkler head 325 ‧ ‧ cover 330‧ ‧ wall 340 ‧ ‧ suction channel 345 ‧ ‧‧Central Channel 350‧‧‧ Vacuum Pump 355‧‧ Valve 360‧‧‧Heater 362‧‧‧ First major surface 364‧‧‧Second main surface 366‧‧‧Power supply 370‧‧ Opening 372‧ ‧‧Output surface 374‧‧‧Power supply 376‧‧‧ translation system 3 78‧‧‧Actuator 380‧‧ ‧ Covering plate 382‧‧‧ Rod 384‧‧‧ Ring 385‧‧‧ Supporting member 386‧‧‧ Guide rod 388‧‧‧Center shaft 390‧‧‧ Opening 392 ‧‧‧Process gas supply 393‧‧ Gas flow separation device 394‧‧‧RF shielding 395‧‧‧Gas flow controller 397‧‧‧Gas flow meter 399‧‧‧Flow impedance element 400‧‧‧Substrate support member 405 ‧‧‧Support arm 410‧‧‧Edge gripping member 415‧‧‧ First surface 420‧‧‧Second surface 425‧‧‧ First surface 430‧‧‧ Second surface 435‧‧‧ First major surface 440 ‧‧‧Second major surface 500‧‧‧Processing chamber 505A‧‧‧First treatment volume 505B‧‧‧Second treatment volume 510‧‧‧Substrate transmission埠600‧‧‧ Back side

The manner in which the above-described features of the present disclosure are achieved can be understood in detail, and a more specific description of the present disclosure (a brief summary above) can be made by reference to the embodiments (illustrated in the drawings). It is to be understood, however, that the appended claims

1A and 1B illustrate plan views of opposite sides of an exemplary four chamber system.

Figure 2 illustrates a perspective view of an exemplary four-chamber system of Figures 1A and 1B.

Figure 3A is a side cross-sectional view of one embodiment of a four processing chamber that can be used in the systems of Figures 1A and 1B.

Figure 3B is a perspective cross-sectional view of a portion of the four processing chambers of Figure 3A.

Figure 4 is a perspective view of one embodiment of a substrate support member that can be used in the transfer chamber of Figures 1A and 1B.

Figures 5A and 5B show various views of the processing chamber, showing an example of substrate transfer processing.

Figures 6A through 6D are various views of the processing chamber showing another example of substrate transfer processing.

For ease of understanding, the same words are used whenever possible to indicate the same elements that are common in the drawings. It is to be understood that the elements disclosed in one embodiment may be used in other embodiments without a specific description.

Domestic deposit information (please note according to the order of the depository, date, number)

Foreign deposit information (please note in the order of country, organization, date, number)

(Please change the page separately) No

150‧‧‧Substrate

300‧‧‧ four processing chambers

302A‧‧‧First Processing Chamber

302B‧‧‧Second processing chamber

305A-305D‧‧‧Processing volume

310‧‧‧ Chamber body

315‧‧‧substrate support

320‧‧‧Sprinkler

325‧‧‧ cover

330‧‧‧ wall

340‧‧ ‧ suction channel

345‧‧‧Central passage

350‧‧‧vacuum pump

355‧‧‧ valve

392‧‧‧Processing gas supply

393‧‧‧Gas flow separation device

395‧‧‧Gas flow controller

397‧‧‧ gas flow meter

399‧‧‧Flow Impedance Element

Claims (20)

An apparatus comprising: a chamber defining a plurality of processing regions, each processing region having a heater disposed centrally within the individual processing regions, each heater having a first major surface and a second major surface The second major surface faces an opposite direction of the first major surface, each first major surface defining a first substrate receiving surface and each second major surface defining a second substrate receiving surface; and a shower The head places the shower head in an opposing relationship to each of the first substrate receiving surface and each of the second substrate receiving surfaces. The apparatus of claim 1 wherein the showerheads are independently movable relative to the substrate receiving surfaces. The device of claim 1 wherein each of the showerheads is coupled to a power source and each showerhead includes a first electrode in the processing regions. The device of claim 3, wherein each heater comprises a second electrode. The apparatus of claim 1 wherein each heater comprises an electrostatic chuck. The apparatus of claim 1 wherein each heater comprises a vacuum clamp. The device of claim 1, further comprising: a radio frequency power source connected to each sprinkler, wherein the output signals of the radio frequency power source are locked together; and each heater includes a bias coupled to A bias electrode of the power supply. The apparatus of claim 7, further comprising: a radio frequency shielding member disposed between two showerheads in adjacent processing regions, the radio frequency shielding member electromagnetically isolating the showerheads. The device of claim 7, further comprising: a radio frequency power controller coupled to the sprinklers to lock the RF using at least one of a phase lock and a frequency lock The output frequency of each of the power supplies. The apparatus of claim 1 further comprising: a gas flow separation device in fluid communication with each of the plurality of processing zones. The apparatus of claim 10, wherein the gas flow separation device comprises: at least one resistive element adapted to provide a gas flow substantially equivalent to each of the plurality of processing regions. The apparatus of claim 10, wherein the gas flow separation device comprises: at least one gas flow controller adapted to provide a gas flow substantially equivalent to each of the plurality of processing zones. The apparatus of claim 10, wherein the gas flow separation device comprises: a gas flow meter and a gas flow controller fluidly coupled to a first gas path, wherein the gas flow meter and the gas flow controller are configured To control gas flow between each of the plurality of processing regions. A processing chamber system comprising: a first quad processing chamber defining a first plurality of isolated processing regions, including: a first substrate support and a second substrate support, Placed in the first four processing chambers; a first gas distribution assembly, the first gas distribution assembly is disposed at a first processing region of the first plurality of isolation processing regions and an upper end of a second processing region And a second gas distribution component, the second gas distribution component is disposed at an upper end and a lower end of a third processing region and a fourth processing region of the first plurality of isolation processing regions Wherein each of the gas distribution assemblies is independently movable relative to the individual substrate support. The system of claim 14, further comprising: a second four processing chamber, the second four processing chamber being disposed adjacent to the first four processing chamber, the second four processing chamber defining a second A plurality of isolated processing areas. The system of claim 14 wherein each of the first and second gas distribution components comprises an electrode coupled to a power source. The system of claim 14 wherein each of the substrate supports comprises a heater. The system of claim 16 further comprising an RF shield between the first and second gas distribution components. The system of claim 17 wherein each of the substrate supports further comprises an electrode. An apparatus comprising: a chamber defining a plurality of processing regions; at least two heaters disposed centrally within the plurality of processing regions, each heater having a first major surface and a first a second major surface, the second major surface being opposite the first major surface, each first major surface defining a first substrate receiving surface and each second major surface defining a second substrate receiving surface, and each heater comprising a biasing electrode coupled to a bias power source; a showerhead for placing the showerhead in an opposing relationship to each of the first substrate receiving surface and each of the second substrate receiving surfaces, each shower head being Independently receiving surface movements relative to the substrates; and a plurality of RF power sources, each of the RF power sources being coupled to each of the showerheads, wherein the output signals of the RF power sources are locked together.