KR101357698B1 - System and method for treating substrates - Google Patents

Abstract

The present invention attaches a process chamber and an edge etching chamber and / or a transfer chamber to the outside of the transfer chamber, each of which allows the substrate processing process to be carried out in a vacuum to deposit a film on the substrate or to etch the substrate film without exposure to the substrate. In addition, the present invention provides a substrate processing system and a substrate processing method capable of performing etching of the substrate edge region and etching of the substrate backside region in a single system.

Substrate, Processing Process, Edge Etch, Back Etch, Vacuum

Description

Substrate Processing System and Substrate Processing Method {SYSTEM AND METHOD FOR TREATING SUBSTRATES}

1 is a conceptual diagram of a substrate processing system according to a first embodiment of the present invention.

2 is a conceptual cross-sectional view of a process chamber according to the first embodiment.

3 is a conceptual cross-sectional view of the edge etching chamber according to the first embodiment.

4 is a conceptual cross-sectional view of an inspection chamber according to the first embodiment.

5 is a conceptual diagram of a substrate processing system according to a modification of the first embodiment.

6 is a conceptual sectional view of a process chamber according to a modification of the first embodiment.

7 is a conceptual cross-sectional view of an edge etching chamber according to a modification of the first embodiment.

8 is a conceptual diagram of a substrate processing system according to a second embodiment of the present invention.

9 is a conceptual cross-sectional view of a backside etching chamber according to a second embodiment.

10 is a conceptual diagram of a substrate processing system according to a third embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10 substrate 100 transfer chamber

110: conveying device 200: load lock chamber

300: process chamber 400: edge etching chamber

500: inspection chamber 600: back etching chamber

101, 201, 302, 401, 501, 601: gate valve

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing system and a substrate processing method, and more particularly, to a process of depositing a film on a substrate or etching a film on a substrate, and an edge region and a backside etching process of a substrate and a substrate inspection process. It relates to a substrate processing system and a substrate processing method that proceed in the system.

In general, a process of depositing a film on a semiconductor substrate for manufacturing a semiconductor device and etching the same is alternately performed a plurality of times. At this time, when the film is deposited on the substrate in the deposition apparatus, an unwanted film is deposited on the substrate edge region and the substrate back region. In addition, even when etching the film on the substrate in the etching apparatus there is a problem that the particles are attracted to the substrate edge region and the substrate back region.

Therefore, an edge or rear region of the substrate on which deposition and etching is completed must be etched using a separate edge etching apparatus or a backside etching apparatus. However, these edge etching devices and backside etching devices exist in isolation from the deposition apparatus and the etching apparatus. Thus, in order for the substrate in the deposition or etching apparatus to be transferred to the edge etching apparatus or the backside etching apparatus, a problem occurs that the substrate must be exposed to the atmosphere.

Accordingly, in order to solve the above problem, the present invention can proceed with the process of depositing or etching a film on a substrate without exposing the substrate to the atmosphere, and etching the edge region and the back region of the substrate in a single process. It is an object of the present invention to provide a substrate processing system and a substrate processing method capable of determining whether an etching process is defective.

A load lock chamber in which a substrate according to the present invention is stored, at least one process chamber for forming a film on the substrate or etching the film on the substrate, or an edge etching chamber for etching an edge region of the substrate. And a transfer chamber to transfer the substrate and to which the load lock chamber, the process chamber, and the edge etching chamber are attached.

The load lock chamber, the process chamber and the edge etching chamber are respectively attached to the conveyance chamber by opening and closing means, and the inner space and the conveyance of the load lock chamber, the process chamber and the edge etching chamber are respectively conveyed by the opening and closing means. Preferably, the inner space of the chamber is separated or communicated.

The edge etching chamber may include a stage portion for supporting the substrate and exposing a substrate edge lower region, a shielding portion disposed adjacent to the stage portion and disposed on a center region of the substrate to expose an upper region of the substrate edge; It is possible to include a plasma generation unit for generating plasma in the edge region.

It is desirable to provide a process gas to the substrate edge region exposed through the shield. It is effective to further include an inert gas injector penetrating the inside of the shield to inject an inert gas to the entire surface of the substrate below the shield.

Preferably, the plasma generation unit includes a first electrode ring provided at an edge region of the stage unit, a second electrode ring provided at an edge region of the shielding unit, and a plasma power supply unit. The plasma power supply unit may effectively supply plasma power to the first electrode ring or the second electrode ring.

The plasma generation unit may further include an antenna unit positioned outside the substrate edge region to receive plasma power from the plasma power supply unit.

The plasma generating unit may include an electrode ring provided at an edge region of the stage unit or an edge region of the shielding unit, and a plasma power supply unit supplying plasma power to the stage unit.

Preferably, the plasma generation unit includes an antenna unit located outside the substrate edge region and a plasma power supply unit supplying plasma power to the antenna unit.

In addition, a load lock chamber in which a substrate is stored according to the present invention, a process chamber for forming a film on the substrate, or performing a process of etching the substrate or the film on the substrate, a back etching chamber for etching the rear region of the substrate, And a transfer chamber to transfer the substrate and to which the load lock chamber, the process chamber, and the back etching chamber are attached.

The load lock chamber, the process chamber and the back etching chamber are respectively attached to the conveying chamber by opening and closing means, and the inner spaces of the load lock chamber, the process chamber and the back etching chamber are conveyed by the opening and closing means. Preferably, the inner space of the chamber is separated or communicated.

The back side etching chamber may expose a back side of the substrate, and may include a substrate support part supporting the substrate, a process gas supply part located in the back area of the substrate and supplying a process gas, and generating a plasma in the back area of the substrate. It is preferable to include a plasma generation part.

The back etching chamber may further include a shield disposed adjacent to the front surface of the substrate.

The plasma generating unit may include an electrode unit positioned in the rear region of the substrate and a plasma power supply unit supplying plasma power to the electrode unit.

Preferably, the distance between the electrode portion and the back surface of the substrate is longer than the distance between the shield portion and the front surface of the substrate.

It is possible to further include an inert gas injector penetrating the inside of the shield to inject an inert gas to the entire surface of the substrate below the shield.

In addition, a load lock chamber in which a substrate according to the present invention is stored, a process chamber for forming a film on the substrate, or performing a process of etching the substrate or the film on the substrate, an edge etching chamber for etching the edge region of the substrate; And a back side etching chamber for etching the back side region of the substrate and the substrate, and a transfer chamber to which the load lock chamber, the process chamber, the edge etching chamber, and the back side etching chamber are attached. do.

The load lock chamber, the process chamber, the edge etching chamber and the back etching chamber are respectively attached to the transfer chamber by opening and closing means, and the load lock chamber, the process chamber, the edge etching chamber and the opening and closing means. It is effective that the inner space of each of the rear etching chambers and the inner space of the transfer chamber are separated or communicated.

In addition, an edge etching chamber for etching the edge region of the substrate, a back etching chamber for etching the rear region of the substrate and the substrate is transferred, the load lock chamber, the edge etching chamber and the back etching chamber Provided is a substrate processing system including a transfer chamber to which is attached.

Preferably, the substrate further includes a load lock chamber in which the substrate is stored.

The process chamber is effective to use a deposition chamber or an etching chamber.

It is possible to further include a test chamber for inspecting the substrate attached to the transfer chamber.

It is preferable to have a substrate transfer part connected to the load lock chamber and having a substrate transfer means for transferring the substrate to the load lock chamber, and substrate alignment means connected to the substrate transfer part to align the substrate.

It is possible to further include a substrate inspection means connected to the load lock chamber to inspect the substrate.

In addition, the step of transferring the substrate stored in the load lock chamber according to the invention to the transfer chamber, the substrate transferred to the transfer chamber is introduced into the process chamber to form a film on the substrate, or the film on the substrate or the substrate Removing the substrate, introducing the substrate in the process chamber into the edge etching chamber through the transfer chamber, and etching the substrate edge region; and introducing the substrate in the edge etching chamber into the load lock chamber via the transfer chamber. It provides a substrate processing method comprising a.

Preferably, the step of aligning the substrate before the transfer of the substrate stored in the load lock chamber to the transfer chamber.

After the step of introducing the substrate in the edge etching chamber into the load lock chamber via the transfer chamber, the method further includes inspecting an edge region of the substrate.

Before or after the etching of the substrate edge region, the method may further include etching the substrate backside region by introducing the substrate into the backside etching chamber.

In addition, the step of transferring the substrate stored in the load lock chamber according to the invention to the transfer chamber, the substrate transferred to the transfer chamber is introduced into the process chamber to form a film on the substrate, or the film on the substrate or the substrate Removing the substrate; introducing the substrate in the process chamber into the backside etching chamber through the transfer chamber; etching the substrate backside area; and introducing the substrate in the backside etching chamber through the transfer chamber into the loadlock chamber. It provides a substrate processing method comprising a.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

1 is a conceptual diagram of a substrate processing system according to a first embodiment of the present invention.

2 is a conceptual cross-sectional view of the process chamber according to the first embodiment, FIG. 3 is a conceptual cross-sectional view of the edge etching chamber according to the first embodiment, and FIG. 4 is a conceptual cross-sectional view of the inspection chamber according to the first embodiment. 5 is a conceptual diagram of a substrate processing system according to a modification of the first embodiment. 6 is a conceptual sectional view of a process chamber according to a modification of the first embodiment. 7 is a conceptual cross-sectional view of an edge etching chamber according to a modification of the first embodiment.

1 to 7, the substrate processing system according to the present embodiment includes a transfer chamber 100, a load lock chamber 200, a process chamber 300, and edge etching provided outside the transfer chamber 100. Chamber 400 and inspection chamber 500.

The transfer chamber 100, the process chamber 300, the edge etching chamber 400, and the inspection chamber 500 may maintain a vacuum.

The transfer chamber 100 maintains a vacuum state, and the substrate 10 is withdrawn from each of the chambers and drawn into another chamber. That is, it is in charge of the transfer of the substrate 10. That is, the substrate 10 drawn from the load lock chamber 200 is introduced into the process chamber 300. The substrate 10 in which the processing process in the process chamber 300 is completed is taken out, and the substrate 10 is drawn into the edge etching chamber 400. The substrate 10 on which the edge region etching is completed in the edge etching chamber 400 is taken out, and drawn into the test chamber 500. The substrate 10 in which the inspection is completed in the inspection chamber 500 is taken out and drawn into the load lock chamber 200. To this end, the transport chamber 100 includes a transport unit 110 for transporting the substrate 10 and a pressure control unit (not shown) for pressure control. And it is preferable to use a robot arm for the conveyance part 110. When the substrate 10 is transported by the robot arm, the substrate 10 may be misaligned at the upper portion of the robot arm. As such, when the substrate 10 is misaligned, an alignment part (not shown) for aligning the substrate 10 may be provided at one side of the transfer chamber 100 for correction thereof. In this case, the transfer chamber 100 may have a plurality of transfer units 110 as in the modification of FIG. 5. This can increase the substrate processing speed. That is, it is possible to pull in the substrate 10 of the load lock chamber 200 while performing the substrate processing in the process chamber 300. In addition, the substrate 10 may be simultaneously introduced into the process chamber 300 and the edge etching chamber 400.

The process chamber 300, the edge etching chamber 400, the inspection chamber 500, and the load lock chamber 200 are connected to the outer circumferential surface of the transfer chamber 100. That is, each of the load lock chamber 200, the process chamber 300, the edge etching chamber 400, and the inspection chamber 500 includes a transfer chamber 100 and a gate valve 201, 301, 401, 501. It is connected by opening and closing means. For example, as illustrated in FIG. 1, the transfer chamber 100 has a horizontal cross section having a substantially rectangular shape, and the load lock chamber 200 is provided through gate valves 201, 301, 401, and 501 on each side of the quadrangle. The process chamber 300, the edge etching chamber 400, and the inspection chamber 500 are connected. As described above, in the present exemplary embodiment, the process chamber 300, the edge etching chamber 400, and the inspection chamber 500 are disposed outside the transfer chamber 100 to treat the substrate central portion in a vacuum state, the film of the substrate edge region, and the like. Particles can be removed and the substrate edge region and substrate processing results can be inspected simultaneously. Of course, the present invention is not limited thereto, and the inspection chamber 500 may be provided separately from the transfer chamber 100 as in the modification of FIG. 5. That is, the load lock chamber 200, the process chamber 300, and the edge etching chamber 400 are positioned on the outer surface of the transfer chamber 100, and the test chamber 500 is spaced apart from the adjacent region of the load lock chamber 300. Can be arranged. Through the process chamber 300 and the edge etching chamber 400, the substrate 10 having completed the substrate processing and the etching of the edge region is introduced into the inspection chamber 500 through the load lock chamber 200, and thus the substrate processing result is processed. Inspection may be performed. In addition, a plurality of process chambers 300, a plurality of load lock chambers 200, and an edge etching chamber 400 may be attached to the transfer chamber 100.

Subsequently, the load lock chamber 200 serves to draw the substrate 10 from the outside of the system (that is, the air) or to pull the processed substrate out of the system through the system. Although not shown, the load lock chamber 200 includes a storage unit for storing the plurality of substrates 10 and a pressure control unit for adjusting the pressure. In addition, the substrate alignment means for aligning the substrate 10 may be further provided. The load lock chamber 200 is connected to one side of the transfer chamber 100 through the load lock gate valve 201. The load lock chamber 200 may be separated into the inlet and outlet load lock chambers 200a and 200b as in the modification of FIG. 5. Through this, the substrate 10 on which the treatment process is to be performed is stored in the incoming load lock chamber 200a and then introduced into the process chamber 300 through the transfer chamber 100. In addition, the substrate 10 on which the substrate processing is completed is withdrawn from the edge etching chamber 400 or the inspection chamber 500 and stored in the withdrawal load lock chamber 200b. In this way, the substrate 10 drawn into the system and the substrate 10 drawn out of the system may be separated to prevent contamination of the substrate 10, and the substrate processing process time may be shortened.

Subsequently, the process chamber 300 is responsible for a substrate processing process of depositing a film on the substrate 10 or etching a film on the substrate 10.

2 shows a process chamber 300 for depositing a film on a substrate 10. The process chamber 300 may include a process chamber gate valve 301 connected to the transfer chamber 100, a substrate support 310 on which the substrate 10 is located, and a process gas as illustrated in FIG. 2. It includes a process gas injection unit 320, a temperature controller (not shown) for adjusting the temperature in the substrate 10 and the chamber, and an exhaust unit 330 for exhausting the process gas in the chamber. The process gas supply unit 340 further provides a process gas to the process gas injection unit 320. Of course, although not shown, it may further include a plasma generating unit for generating a plasma inside the chamber.

It is preferable to use an electrostatic chuck as the substrate support 310. Of course, the present invention is not limited thereto, and various devices capable of supporting the substrate 10 may be used during the processing process. In addition, a plurality of substrates 10 may be positioned on the substrate support 310. In addition, a heating means or a cooling means 311 may be provided inside the substrate support 310 to adjust the temperature of the substrate constantly. It is preferable to use a shower head as the process gas injection unit 320. The process gas includes various source gases for insulating film, semiconductor film or metal film deposition. In addition, the process gas injection unit 320 and the plasma generation unit may be integrally manufactured. That is, at least a part of the body of the process gas injection unit 320 may be used as an electrode for plasma generation.

In addition, an etching chamber for etching a substrate or a film on the substrate may be used as the process chamber 300 as in the modification of FIG. 6.

As shown in FIG. 6, the process chamber 300 includes a gate valve 301 for the process chamber, a substrate support 350 on which the substrate 10 is located, a process gas injector 320 for injecting process gas, , An upper electrode portion 360 for generating plasma, a plasma power supply 370 for supplying plasma generation power to the upper electrode portion 360, and a bias power supply for applying bias power to the substrate support 350. 380. It further includes an exhaust unit 330 for exhausting the process gas in the chamber, and a process gas supply unit 340 for supplying the process gas.

The substrate support part 350 includes a substrate support chuck 351 and an edge ring 352 provided around an upper edge of the substrate support chuck 351. The upper electrode portion 350 is manufactured in a circular plate shape provided with a plurality of through holes. In addition, the upper electrode part 350 is positioned below the process gas injection part 320 as shown in FIG. 6. Of course, the present invention is not limited thereto, and the upper electrode 350 may be positioned in an upper region of the process gas injection unit 320 and an inner region of the process gas injection unit 320. The upper electrode portion 350 is connected to the plasma power supply 370. Through this, plasma is generated inside the chamber by using the plasma power supplied from the plasma power supply unit 370. Here, the process gas includes an etching gas for etching the substrate 10 or the film on the substrate. The substrate support 350 is connected to the bias power supply 380 to receive bias power.

In the above description, a chamber having a capacitively coupled plasma (CCP) by capacitive coupling for plasma generation has been described. However, the present invention is not limited thereto, and an inductively coupled plasma (ICP), a hybrid type plasma generator, an electromagnetic cyclotorn resonance (ECR) plasma generator, a surface wave plasma (SWP) generator, etc. may be used. Can be used.

In addition, when the etching chamber is used as the process chamber 300, a photoresist film, a hard mask film used during etching, and a separate ashing or cleaning chamber for removing particles in the center of the substrate may be further provided.

Of course, the above-described deposition chamber and etching chamber as well as the various chambers for manufacturing a semiconductor device may be used as the process chamber 300.

The edge etch chamber 400 then removes the film or remaining particles formed in the substrate edge region. This prevents damage to the device pattern of the substrate and the substrate center due to the film and particles in the edge region during the subsequent process.

As shown in FIG. 3, the edge etching chamber 400 includes a stage part 410 on which the substrate 10 is located, and a shield part disposed on the center area of the substrate 10 and supplying process gas to the substrate edge area. 420 and a plasma generator 430 for generating a plasma. In this case, the plasma generating unit 430 includes a lower electrode ring 431 provided at an edge region of the stage unit 410, an upper electrode ring 433 provided at an edge region of the shielding unit 420, and the lower electrode ring ( And a plasma power supply unit 435 for supplying plasma power to the 431. In addition, the shielding unit 420 further includes a gas supply unit 440 for supplying a process gas and an exhaust unit 450 for exhausting the process gas. The stage part 410 and the shielding part 420 are provided with the protrusion part, and the shape of the protrusion part is manufactured in the same shape as the board | substrate 10. FIG. In addition, the size of the protrusion is made smaller than the size of the substrate 10. The stage 410 and / or the shield 420 may move up and down. Through this, the distance between the protrusions of the stage part 410 and the shielding part 420 can be freely adjusted. Therefore, if the substrate 10 is positioned on the protrusion of the stage 410 and the protrusion of the shield 420 is disposed adjacent to each other, the substrate 10 is formed by the two protrusions to the side regions of the stage 410 and the shield 420. The edge area of 10 is exposed. In this case, the edge region of the exposed substrate 10 is preferably 0.1 to 5mm at the end of the substrate.

The lower electrode ring 431 is provided around the protrusion of the stage part 410, and the upper electrode ring 433 is provided around the protrusion of the shielding part 420. As a result, the upper electrode ring 433 and the lower electrode ring 431 are positioned at upper and lower portions of the edge region of the substrate 10. The interval between the lower electrode ring 431 and the upper electrode ring 433 may be wider than the protrusion of the stage 410 and the protrusion of the shield 420. At this time, the lower electrode ring 431 and the upper electrode ring 432 is preferably spaced apart by an interval that can generate a plasma in the space between the two electrode ring through the plasma power source. Therefore, the plasma can be concentrated in the edge region of the substrate 10. In addition, a gas injection hole 421 for injecting a process gas is provided between the protrusion of the shield 420 and the upper electrode ring 433 as illustrated in the drawing. Through this, the process gas may be injected into the edge region of the substrate 10.

The lower electrode ring 431 is connected to the plasma power supply 435 to receive plasma power. The upper electrode ring 433 is preferably connected to the ground. The opposite connection, of course, is also possible. That is, when the plasma power is supplied to the lower electrode ring 431, and the process gas is injected into the substrate edge region, plasma is generated between the lower electrode ring 431 and the upper electrode ring 433, and the process gas is converted into plasma. . The plasmalized process gas reacts with and etches films or particles in the edge region of the substrate 10.

Of course, the substrate edge etching chamber 400 described above is not limited thereto, and the stage unit 410 supporting the substrate 10 and exposing the edge region of the substrate 10, as in the modified example of FIG. 7, and the substrate A shield 420 for shielding the central region of 10, and upper and lower electrode portions 450 and 460 positioned above and below the substrate edge region exposed by the stage 410 and the shield 420; The antenna unit 470 is provided in the side region of the exposed substrate edge region, and the shield unit 480 isolating the antenna unit 470. The apparatus further includes a process gas supply unit 440 for supplying a process gas to the substrate edge region through the shielding unit 420, and a plasma power supply unit 490 for supplying plasma power to the antenna unit 470. Here, the antenna unit 470 is applied with a high frequency power source for plasma generation, and the upper and lower electrode portions 450 and 460 are connected to the ground. The stage unit 410 receives a bias power supply. As shown in the figure, the upper electrode 450 is positioned around the edge of the shield 420, and the lower electrode 460 is located around the edge of the stage 410. In this case, since different powers are applied to the lower electrode portion 460 and the stage portion 410, an insulating film 461 for insulating them is positioned therebetween. If necessary, any one of the upper electrode 450 and the lower electrode 460 may be omitted. In addition, the edge etching chamber 400 may be manufactured by being separated into the upper body 402 and the lower body 403. At this time, the shield 480 is preferably manufactured in a circular ring shape extending from the lower body 403 to the upper body 402. In addition, it is effective to separate the inner and outer regions of the shield portion 480 spatially.

As such, the substrate edge etching chamber 400 for etching or cleaning the edge region of the substrate 10 may have various configurations and shapes depending on the plasma generating apparatus used.

Subsequently, the inspection chamber 500 inspects the deposition state of the film or the etching state of the film performed through the process chamber 300, or the etching defect of the edge region of the substrate 10 performed through the edge etching chamber 400. . The inspection chamber 500 supports the substrate 10 as shown in FIG. 4, a substrate support 510 for exposing an edge region of the substrate 10, and an inspection apparatus 520 for inspecting the surface of the substrate 10. ). The substrate support 510 is manufactured in a plate shape as shown in the drawing. Of course, the present invention is not limited thereto and may protrude in the form of a pin. The inspection device 520 includes a camera unit and a reading unit that reads it. As shown in the drawing, the inspection apparatus 520 may be located on upper and lower surfaces of the substrate 10. In addition, the inspection apparatus 520 positioned above the substrate 10 may move back, front, left, and right, and may also rotate. Through this, all regions of the substrate 10 can be inspected precisely. The camera unit includes at least one crack inspection camera and at least one edge width detection camera. In this case, the crack detection camera photographs an image of the substrate 10 and transmits the photographed image to the microcomputer (not shown). The microcomputer determines whether a crack exists in the substrate 10 based on the received image. The edge width detection camera photographs an image of the edge region of the substrate 10 and transmits the photographed image to the microcomputer. In this case, after etching the substrate edge region, an etching line exists between the etching region and the unetched region of the substrate. At this time, the microcomputer determines the distance between the etching line formed in the edge region and the end of the substrate using the received image.

Hereinafter, a substrate processing method of the substrate processing system including the transfer chamber 100, the load lock chamber 200, the process chamber 300, the edge etching chamber 400, and the inspection chamber 500 will be described.

The substrate 10 is drawn into the load lock chamber 200 from outside of the system. In this case, the load lock chamber 200 is in the same atmospheric pressure state as the outside of the system, and the remaining chambers 200 except the load lock chamber 200 maintain a vacuum state. The internal pressure of the load lock chamber 200 is equal to the pressure of the transfer chamber 100. The substrate in the load lock chamber 200 is moved to the transfer chamber 100 through the transfer unit 110. The substrate 10 transferred to the transfer chamber 100 is seated on the substrate support 310 of the process chamber 300. In the process chamber 300, a substrate treatment process such as depositing a film on the substrate 10, etching the substrate 10, or etching the film on the substrate 10 is performed. After the substrate processing process is completed, the processed substrate 10 is taken out from the process chamber 300 through the transfer unit 110, and then transferred to the edge etching chamber 400 via the transfer chamber 100. The substrate 10 removes impurities such as particles and the film formed in the substrate edge region in the edge etching chamber 400. After the etching of the substrate edge region is completed as described above, the substrate 10 is withdrawn from the edge etching chamber 400 through the transfer unit 110, and then transferred to the inspection chamber 500 via the transfer chamber 100. The substrate 10 inspects not only the film or pattern defect inspection of the substrate center region but also the defect of the substrate edge region in the inspection chamber 500. After the inspection of the substrate 10 is completed, the substrate 10 is withdrawn from the inspection chamber 500 through the transfer unit 110, and transferred to the load lock chamber 200 via the transfer chamber 100. Thereafter, the substrate transferred to the load lock chamber 200 is discharged out of the system.

In this case, the conveying chamber, the process chamber, the edge etching chamber and the inspection chamber are preferably under similar pressure (vacuum). This enables the deposition of the film or the etching of the film, the removal of the film in the substrate edge region and the inspection of the substrate in a single system, and the exposure of the substrate to air to prevent substrate contamination. .

The substrate processing system according to the present invention is not limited to the above description, and the film deposition / etching process and the substrate back region etching process may be performed in a single system. Hereinafter, a substrate processing system according to a second exemplary embodiment of the present invention will be described with reference to the drawings. The description overlapping with the above-described embodiment will be omitted. In addition, the description of the following description may be applied to the above-described embodiment.

8 is a conceptual diagram of a substrate processing system according to a second embodiment of the present invention.

9 is a conceptual cross-sectional view of a backside etching chamber according to a second embodiment.

8 and 9, the substrate processing system according to the present embodiment includes a transfer chamber 100, a load lock chamber 200 provided outside the transfer chamber 100, a process chamber 300, and a rear etching chamber ( 600 and inspection chamber 500.

In the present exemplary embodiment, a process of depositing a film on the substrate 10 through the process chamber 300 or removing the film of the substrate 10 or the substrate 10 is performed, and the back etching chamber 600 is maintained in a vacuum state. By removing the unnecessary film or particles located in the substrate back region.

For example, in the case of depositing a film on the substrate 10 through the process chamber 300, the process gas provided during the deposition process penetrates between the substrate 10 and the substrate support 310 to form a back region of the substrate 10. An unwanted film is deposited on. Accordingly, when the next process is performed without removing the film, the film 10 may be bent or warped due to the film. Therefore, the above-described problems may be solved by performing a process of etching the rear surface of the substrate after the substrate 10 is processed through the process chamber 300.

To this end, in the present embodiment, the process chamber 300 and the rear surface etching chamber 600 are attached to the outer circumferential surface of the transfer chamber 100 through the gate valves 301 and 601. As a result, the processed substrate 10 may be etched through the process chamber 300 to the rear surface etching chamber 600 without being exposed to the atmosphere, and the rear surface of the substrate 10 may be etched.

Here, the transfer chamber 100, the process chamber 300, and the inspection chamber 500 are omitted because they are similar to the description of the first embodiment. At this time, the transfer chamber 100 may have a body of a circular shape, as shown in FIG. At this time, the conveying apparatus 110 may be located at the center of the circular body to sufficiently secure the active area of the conveying apparatus 110. Through this, the substrate transfer in the transfer chamber 100 can be freed.

The above-mentioned back etching chamber 600 exposes a back surface of the substrate 10 and supports a substrate support 610 for supporting the substrate 10, a shield 620 for shielding the front surface of the substrate 10, and a substrate ( The inert gas is disposed on the front surface of the substrate 10 through the process gas supply unit 630 positioned at the rear region of the substrate 10 to supply the process gas, the plasma generator 640 generating the plasma, and the shielding unit 620. An inert gas supply unit 650 for spraying and a lifting unit 660 for raising and lowering the substrate support unit 610 are provided. And it further includes an exhaust unit 670 for exhausting the gas.

As shown in the drawing, the substrate support 610 includes a protrusion supporting the substrate rear edge region, and an extension extending from the protrusion to be connected to and fixed to the lifting unit 660. The protrusions are arranged in a substantially circular ring shape, and the substrate back edge region is located inside the ring. The projection has a predetermined inclined surface and has a seating surface on which the substrate is mounted. This allows the substrate to be automatically aligned. In addition, since the edge portion of the substrate is supported by the protrusion, almost the region of the rear surface of the substrate may be exposed. The extension part is connected to the lifting part 660 to fix and support the protrusion part. Then, the extension portion is elevated by the elevation portion 660. Through this, the position of the protrusion can be moved up and down, so that the inlet and out of the substrate 10 can be easily performed, and the distance between the substrate 10 and the shield 620 positioned on the protrusion can be variously adjusted. .

The shield 620 is provided in substantially the same plate shape as the substrate 10 and is positioned in an upper region of the substrate. The shield 620 is fixed to the upper wall of the rear etching chamber 600 as shown in FIG. 9. Of course, if necessary, the shield 620 may be positioned in the upper region of the substrate to perform vertical movement. In addition, the size of the shield 620 is preferably equal to or larger than the size of the substrate 10 to shield the entire surface of the substrate 10. The shield 620 may also function as an electrode. In this case, the shield 620 may be connected to ground, or may be connected to a predetermined bias power supply. Of course, the shield 620 may be fabricated separately into the electrode area and the shield area.

The inert gas supply unit 630 penetrates inside the shield 620 to inject an inert gas to the entire surface of the substrate 10 below the shield 620 and the inert gas injector 651. An inert gas reservoir 652 for supplying an inert gas. As such, the inert gas may be injected into the space between the shield 620 and the front surface of the substrate 10 to prevent the etching gas for backside etching from penetrating into the space.

The process gas supply unit 630 may be disposed at a rear surface of the substrate 10 to inject a process gas into a rear surface of the substrate, and a process gas to supply process gas to the process gas injector 631. A storage unit 632 is provided. At this time, it is effective to use the showerhead method as the process gas injection unit 631. Through this, the process gas may be evenly sprayed on the rear surface of the substrate 10.

The plasma generator 640 includes a plasma power supply 642 for providing plasma power, and a plasma electrode part 641 for generating plasma in the rear region of the substrate 10 according to the plasma power. The plasma electrode part 641 is located in the lower region of the rear surface of the substrate 10. The plasma electrode portion 641 is located on the upper surface of the process gas injection portion 630, that is, on the upper surface of the process gas injection portion 631 as shown in FIG. 9. In this case, the plasma electrode part 641 is provided with a through hole corresponding to the nozzle part of the process gas injection part 631. In the present embodiment, it is preferable that the separation distance between the plasma electrode part 641 and the substrate 10 is longer than the separation distance between the shielding part 620 and the substrate 10. The distance between the shielding part 620 and the substrate 10 may be set closer to a distance (for example, 0.1 mm to 5 mm) or more to prevent plasma generation in the area between the two. Therefore, the plasma may be selectively generated only in the space between the plasma electrode unit 641 and the rear surface of the substrate 10. In this case, the separation interval between the substrate 10, the shield 620, and the plasma electrode 641 is controlled by the substrate support 610 moving by the lifting unit 660.

The rear surface etching chamber 600 supports the substrate 10 that is introduced through the gate valve 601 by lowering the substrate support 610. Subsequently, the substrate supporting part 610 is raised by the elevating part 660 to position the substrate 10 adjacent to the shielding part 620, and the distance between the substrate 10 and the plasma generating part 640 is a predetermined distance (plasma). Distance to generate a distance). Subsequently, plasma power is supplied to generate plasma in a space between the substrate 10 and the plasma generator 640, and a process gas is supplied to plasma the plasma. The plasma-processed process gas reacts with and removes particles and particles on the back surface of the substrate 10.

The substrate 10 introduced into the rear etching chamber 600 is transferred from the process chamber 300 to the substrate 10 on which the deposition or etching process is completed, through the transfer chamber 100. As a result, the substrate 10 may not be exposed to the atmosphere. Of course, the substrate 10 from the process chamber 300 may be provided to the back etching chamber 600 after first passing through a cleaning chamber (not shown). After removing the film and the particles of the rear surface area of the substrate by the back etching chamber 600, the substrate 10 is introduced into the inspection chamber 500 to perform the inspection. The inspected substrate 10 is discharged out of the system through the load lock chamber 200.

As described above, in the present exemplary embodiment, the process chamber 300 for depositing or etching the film on the substrate 10 and the back etching chamber 600 for etching the substrate rear region are placed in a single vacuum system, and thus the substrate backside is deposited after the film deposition or etching. The films or particles formed in the area can be effectively removed in vacuo.

In addition, the substrate processing system according to the present invention is not limited to the above description, and the film deposition / etch process and the substrate edge region and the substrate back region etching process may be performed in a single system. Hereinafter, a substrate processing system according to a third embodiment of the present invention will be described with reference to the drawings. Descriptions overlapping with the above-described embodiments will be omitted. In addition, the description of the following description may be applied to the above-described embodiments.

10 is a conceptual diagram of a substrate processing system according to a third embodiment of the present invention. 11 is a conceptual diagram of a substrate processing system according to a modification of the third embodiment. 12 is a conceptual diagram of a substrate processing system according to another modification of the third embodiment.

Referring to FIG. 10, the substrate processing system according to the present exemplary embodiment may include a load lock chamber 200, a process chamber 300, an edge etching chamber 400, which are provided outside the transfer chamber 100 and the transfer chamber 100. And back etching chamber 600.

Through this process, a film is deposited on the substrate 10, a process of removing the film of the substrate 10 or the substrate 10, a process of removing the film or particles of the substrate edge region, and a film or particle of the substrate back region. The process can be carried out in a single system. As a result, the exposure time of the substrate 10 may be reduced to prevent oxidation, as well as the phenomenon that impurities are adsorbed onto the substrate 10. In addition, the process distance may be shortened by reducing the transfer distance of the substrate 10.

The transfer chamber 100 preferably has an octagonal body as shown in FIG. 10. Of course, the present invention is not limited thereto and may have a polygonal body. The transfer chamber 100 may include a load lock chamber 200, a process chamber 300, and an edge etching chamber 400 through gate valves 201, 301, 401, and 601, respectively, on an outer circumferential surface of an octagonal body. And the back etching chamber 600 is coupled.

The substrate 10 of the load lock chamber 200 is introduced into the process chamber 300 through the transfer device 110 of the transfer chamber 100. The process chamber 300 forms a film on the inserted substrate 10 or performs a treatment process of etching the film. In this case, it is preferable that the process chamber 300 is located in an adjacent region of the load lock chamber 200. Through this, the transfer distance of the substrate 10 can be reduced. In the following description, the process chamber 300 forms a film on the substrate 10.

Subsequently, the substrate 10 on which the processing process is completed is discharged from the process chamber 300 and drawn into the edge etching chamber 400. In this case, a new substrate may be loaded into the process chamber 300. The edge etching chamber 400 removes the film or particles of the edge region of the substrate 10, that is, the upper side, the sidewall, and the lower side of the end of the substrate 10, which have been processed. The edge etching chamber 400 is preferably disposed adjacent to the process chamber 300.

Subsequently, the substrate 10 having completed the etching of the substrate edge region is discharged from the edge etching chamber 400 and drawn into the back etching chamber 600. In this case, the substrate 10 may be discharged from the process chamber 300 and introduced into the edge etching chamber 400. The back etching chamber 600 removes the film or particles in the back region of the substrate 10 from which the edge region is etched. That is, the back etching chamber 600 removes the film or particles formed during the processing by the process chamber 300 and the edge etching chamber 400. The back etching chamber 600 is disposed adjacent to the edge etching chamber 400.

In the above description, the substrate 10 passes through the process chamber 300 and then sequentially passes through the edge etching chamber 400 and the rear etching chamber 600, and then enters the load lock chamber 200 and is discharged out of the system. It was.

However, the present invention is not limited thereto, and the order of the substrate 10 to be processed by being introduced into the process chamber 300, the edge etching chamber 400, and the back etching chamber 600 may be changed in various ways. Accordingly, the treatment method of the substrate 10 may also be variously changed. For example, a film is formed on the substrate 10 while sequentially passing through the process chamber 300, the rear etching chamber 600, and the edge etching chamber 400, and the film on the rear surface of the substrate 10 is removed, Remove the film or particles. In addition, before the substrate 10 is introduced into the process chamber 300, the substrate 10 is first introduced into the edge etching chamber 400 and / or the rear etching chamber 600, so that the edge region and the rear region of the substrate 10 may be removed. Can be etched.

Of course, although the embodiment is not shown, an inspection chamber may be provided on one side of the transfer chamber 100. In this case, a plurality of inspection chambers may be provided. That is, the edge region surface inspection of the substrate 10 discharged from the edge etching chamber 400 is performed through the inspection chamber inspecting the substrate edge region. In addition, an inspection chamber for inspecting the substrate rear region may perform an inspection of the rear region of the substrate 10 discharged from the rear etching chamber 600. Of course, the present invention is not limited thereto, and both the substrate edge region and the substrate rear region may be inspected through one inspection chamber. And, as mentioned in the above embodiment, the test chamber may be located separately from the transport chamber.

As illustrated in FIG. 11, an inspection means 240 functioning as an inspection chamber may be provided inside the load lock chamber 200. That is, the load lock chamber 200 according to FIG. 11 includes a load lock unit 210 connected to the transfer chamber 100, a cassette unit 250 in which the substrate 10 is stored, the load lock unit 210 and the cassette unit. And a substrate transfer part 220 provided in an area between the 250. In addition, the substrate transfer unit 220 includes a substrate alignment unit 230 that is in charge of the alignment of the substrate 10, and a substrate inspection unit 240 that performs inspection of the substrate 10. In addition, the substrate transfer part 220 is provided with a robot arm 260 that is responsible for the transfer of the substrate 10. Through this, the robot arm 260 withdraws the substrate 10 located in the cassette unit 250 to the outside. The withdrawn substrate 10 is aligned with the substrate alignment means 230 and then introduced into the load lock unit 210 through the robot arm 260 and transferred into the transfer chamber 100. Subsequently, the substrate 10 processing step is completed and the substrate 10 transferred from the transfer chamber 100 to the load lock unit 210 is placed in the substrate inspection means 240 by the robot arm 260. In the substrate inspection means 240, the edge region of the substrate 10 is inspected and then mounted on the cassette 250 by the robot arm 260. In addition, the substrate processing system according to the modified example of FIG. 11 may provide a plurality of process chambers 300. That is, in the drawing, two process chambers 300a and 300b are provided.

In addition, the substrate processing system according to the modification of FIG. 12 may omit the process chamber 300. That is, the edge etching chamber 400, the rear etching chamber 600, the inspection chamber 500, and the load lock chamber 200 may be attached to the outside of the transfer chamber 100. This allows the edge and back regions of the substrate 10 to be etched in a single system and then inspected for defects in the edge and back regions. Of course, the present invention is not limited thereto, and various modifications are possible. For example, it is possible for the substrate processing system to omit the load lock chamber 200 as needed.

As described above, according to the present invention, a process chamber, an edge etching chamber, and a rear etching chamber are disposed outside the transfer chamber to deposit a film on the substrate or to etch the substrate film without exposing the substrate to the atmosphere. Etching of the back region can be performed in a single chamber system.

In addition, the present invention can quickly determine whether the substrate processing process performed by the process chamber, the edge etching chamber or the back etching chamber by placing the inspection chamber outside the transfer chamber.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

Claims (30)

A load lock chamber in which a substrate is stored; At least one process chamber which forms a film on the substrate or performs a process of etching the substrate or the film on the substrate; An edge etching chamber for etching an edge region of the substrate; And A transfer chamber to transfer the substrate, to which the load lock chamber, the process chamber, and the edge etching chamber are attached, The edge etching chamber is, A stage portion for supporting the substrate and exposing a region under the substrate edge; A shield disposed adjacent to the stage and disposed on a center area of the substrate to expose an area above the substrate edge; An antenna unit provided in a side region of the substrate edge region and provided inside the edge etching chamber; And a shield portion for isolating the antenna portion. The method according to claim 1, The load lock chamber, the process chamber and the edge etching chamber are each attached to the transfer chamber by opening and closing means, And an inner space of each of the load lock chamber, the process chamber, and the edge etching chamber and the inner space of the transfer chamber are separated or communicated by the opening and closing means. A load lock chamber in which a substrate is stored; At least one process chamber which forms a film on the substrate or performs a process of etching the substrate or the film on the substrate; An edge etching chamber for etching an edge region of the substrate; An inspection chamber for inspecting the substrate; And And a transfer chamber to transfer the substrate and to which the load lock chamber, the process chamber, the edge etching chamber and the inspection chamber are attached. The method according to claim 1, A substrate processing system providing a process gas to the substrate edge region exposed through the shield. The method according to claim 1, And an inert gas injector penetrating the inside of the shield to inject an inert gas to the entire surface of the substrate below the shield. The method according to claim 1, And a plasma power supply for supplying power to the antenna. The method according to claim 1 or 6, And an upper electrode portion and a lower electrode portion positioned above and below the substrate edge region. The method according to claim 1 or 6, And an upper electrode portion positioned around an edge of the shielding portion or a lower electrode portion positioned around an edge of the stage portion. The method of claim 3, The edge etching chamber is, A stage portion for supporting the substrate and exposing a region under the substrate edge; A shield disposed adjacent to the stage and disposed on a center area of the substrate to expose an area above the substrate edge; And a plasma generation unit generating plasma in the substrate edge region. The method of claim 9, And the plasma generating unit includes a first electrode ring provided at an edge region of the stage unit, a second electrode ring provided at an edge region of the shielding unit, and a plasma power supply unit. A load lock chamber in which a substrate is stored; A process chamber for forming a film on the substrate or etching the substrate or a film on the substrate; A back etching chamber for etching a back region of the substrate; And And a transfer chamber to transfer the substrate and to which the load lock chamber, the process chamber, and the backside etch chamber are attached. The method of claim 11, The load lock chamber, the process chamber and the back etching chamber are each attached to the transfer chamber by opening and closing means, And an inner space of each of the load lock chamber, the process chamber, and the rear surface etching chamber and an inner space of the transfer chamber are separated or communicated by the opening and closing means. The method of claim 11, wherein the back etching chamber, A substrate support for exposing a rear surface of the substrate and supporting the substrate; A process gas supply unit positioned in a rear region of the substrate to supply a process gas; And a plasma generator configured to generate a plasma in a rear region of the substrate. 14. The method of claim 13, The back side etching chamber further comprises a shield disposed adjacent to the front of the substrate. 15. The method of claim 14, And the plasma generating unit includes an electrode unit positioned in the rear region of the substrate, and a plasma power supply unit supplying plasma power to the electrode unit. 16. The method of claim 15, And a distance between the electrode portion and the back surface of the substrate is longer than a distance between the shield portion and the front surface of the substrate. 15. The method of claim 14, And an inert gas injector penetrating the inside of the shield to inject an inert gas to the entire surface of the substrate below the shield. A load lock chamber in which a substrate is stored; A process chamber for forming a film on the substrate or etching the substrate or a film on the substrate; An edge etching chamber for etching an edge region of the substrate; A back etching chamber for etching a back region of the substrate; And And a transfer chamber to transfer the substrate and to which the load lock chamber, the process chamber, the edge etching chamber and the backside etching chamber are attached. 19. The method of claim 18, The load lock chamber, the process chamber, the edge etching chamber and the back etching chamber are each attached to the transfer chamber by opening and closing means, And an inner space of each of the load lock chamber, the process chamber, the edge etching chamber, and the rear etching chamber and the inner space of the transfer chamber are separated or communicated by the opening and closing means. An edge etching chamber for etching an edge region of the substrate; A back etching chamber for etching a back region of the substrate; And And a transfer chamber to transfer the substrate and to which the edge etching chamber and the backside etching chamber are attached. The method of claim 20, And a load lock chamber in which the substrate is stored. The method according to any one of claims 1, 11 and 18, And the process chamber uses a deposition chamber or an etching chamber. The method according to any one of claims 1, 11, 18 and 20, And a test chamber for inspecting a substrate attached to the transfer chamber. The method according to any one of claims 1, 11, 18 and 21, A substrate transfer part connected to the load lock chamber and having a substrate transfer means for transferring the substrate to the load lock chamber; And substrate alignment means connected to the substrate transfer portion to align the substrate. The method according to any one of claims 1, 11, 18 and 21, And substrate inspection means connected to the load lock chamber to inspect the substrate. Transferring the substrate stored in the load lock chamber to a transfer chamber; Introducing the substrate transferred to the transfer chamber into a process chamber to form a film on the substrate or removing the substrate or a film on the substrate; Etching a substrate edge region by introducing a substrate in the process chamber into the edge etching chamber via the transfer chamber; Drawing a substrate in the edge etching chamber into the load lock chamber via the transfer chamber; And Inspecting an edge region of the substrate; Substrate processing method comprising a. The method of claim 26, wherein before transferring the substrate stored in the load lock chamber to the transfer chamber, And aligning the substrate. delete The method of claim 26, before or after the step of etching the substrate edge region, And etching the substrate backside area by introducing the substrate into a backside etch chamber. Transferring the substrate stored in the load lock chamber to a transfer chamber; Introducing the substrate transferred to the transfer chamber into a process chamber to form a film on the substrate or removing the substrate or a film on the substrate; Etching the substrate backside region by introducing a substrate in the process chamber through the transfer chamber into a backside etch chamber; And Drawing a substrate in the back etching chamber through the transfer chamber into the load lock chamber.

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