TW200845268A - Apparatus and method of processing substrates - Google Patents

Abstract

In an apparatus for treating substrates, a primary process chamber, a peripheral etching chamber and a rear etching chamber are arranged around a transfer chamber, and a primary process, a peripheral etching process and a rear etching process are performed under a vacuum state in a single system. The peripheral and the rear etching processes are performed in the same space without atmospheric exposure of the substrate. Accordingly, the process time of the primary process, the peripheral and the rear etching processes may be remarkably reduced, to thereby improve the manufacturing efficiency of a semiconductor device.

Description

200845268 IX. Description of the Invention: Technical Field of the Invention The present invention relates to a substrate processing apparatus and method thereof, and more particularly to performing a primary process (process) and a secondary process (sec〇) on a substrate in the same system. n(jary pr〇cess ) and a device for inspecting an inspection process and a method of processing a substrate using the same.

Ο Generally, the fabrication process of a semiconductor device includes repeatedly performing a deposition (dep〇siii (10)) process and an etching process on a semiconductor device such as a wafer. However, when a thin layer is deposited on a substrate, an excessive layer is formed on the peripheral portion and the rear surface of the base (four). Further, when a thin layer on the substrate is named for the patterning process, various contaminants (e.g., particles) are easily attached to the peripheral portion and the rear surface of the substrate. The peripheral portion of the substrate includes upper and lower edge portions of the substrate and sidewalls of the substrate, generally referred to as bevel portions (bev-n) of the substrate. In general, the surface on the substrate for forming a thin layer and a pattern structure is referred to as a front surface, and the surface of the substrate opposite the front surface is referred to as a rear surface. It is also found on the back surface of the substrate where the surrounding layer is left and/or the base of the substrate is used. In the manufacturing process of semiconductor devices, in order to improve the system and reduce process defects in subsequent processes, an additional secondary process must be performed. For example, when a pattern structure is to be formed on a substrate, a deposition process is performed on the substrate to form a thin layer on the substrate, and then a thin layer is patterned by performing an etching process of 6 200845268 ^ / ^jyjyjuxx. Further, although it is not necessary for the above-described patterning structure, it is preferable to perform an etching process to remove excess layers on the substrate to reduce processing defects. The etching process for removing excess layers on the substrate is a secondary process, and the process for forming the pattern structure is a primary process. Therefore, a typical primary process for fabricating a semiconductor device is after performing a primary process including a deposition process and an etching process on the substrate. A secondary process must be performed to remove excess thin layers on the peripheral and back surfaces of the substrate. The secondary process is performed in an additional device after the primary process is performed. That is to say, after the deposition process and/or the etching process is performed on the substrate, the excess thin layer on the substrate is removed in an additional I, in other words, the primary and secondary processes are independent devices. Executed separately. Therefore, the substrate on which the primary process has been performed must be exposed to the surrounding environment, especially when the substrate is rotated from the primary process (4) to the secondary process. In addition, no one has proposed a process for cleaning the excess thin layer on the peripheral portion and the rear surface of the substrate in the same device or system. Hereinafter, the excess thin layer on the side of the substrate 2 is called the excess thin layer in the peripheral portion, and the excess thin layer on the wire after the = plate is called the excess thin layer on the back surface, and the excess thin layer of the peripheral portion is removed. The main μ ^ ~% is the peripheral part of the side process 'by the process called the back table secret engraving process. Different process chambers Uhambe 多余 多余 多余 多余 多余 多余 多余 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边 周边Since the peripheral portion etching process and the back surface etching process are performed in different devices: independently, performing an etching process to remove excess thin layers requires a large amount of time and cost, thus greatly reducing the processing efficiency of manufacturing the semiconductor device. SUMMARY OF THE INVENTION Therefore, the present invention provides a device that performs a primary process, a secondary process, and an inspection process in the same apparatus without exposing the substrate to the surrounding environment. The present invention also provides a method of processing a substrate using the above apparatus. The present invention provides a substrate processing apparatus for manufacturing a semiconductor device. The substrate processing apparatus includes a load-lock chamber for accommodating a plurality of substrates, a primary processing chamber for performing a primary process for manufacturing the semiconductor device, and a secondary processing chamber for performing peripheral portions of the substrate An etching process; and a transfer chamber adjacent to the load-lock chamber, the primary process chamber, and the secondary process chamber, thereby allowing the substrate to pass through the transfer chamber in the load-lock chamber, the primary process chamber, and the secondary process chamber Transfer between. Q In one embodiment, the loading "locking chamber, primary processing chamber, and secondary manufacturing are included to include a gate that is in contact with the transfer chamber, such that the load-lock to, the primary process chamber, and the second Each internal space of the stage process chamber is connected or separated from the transfer space of the transfer chamber. In one embodiment, the secondary process chamber includes a siage that supports the rear surface of the substrate such that the peripheral portion of the substrate is exposed to the surrounding environment within the secondary process chamber; a shield unit, adjacent a crucible surface opposite the rear surface of the substrate, and covering a central portion of the front surface such that the periphery of the base 8 200845268 is exposed to the surrounding environment; and the electropolymer generator (ph_gener_) is each around the peripheral portion of the substrate Generate electricity. In the example, the processing gas is supplied to the peripheral portion of the soil plate which is not covered by the shielding unit. In addition, the device has a gas injector that passes through the shielding unit, and the gas injector is injected into the central portion of the front surface of the substrate. Ο 穴 穴 - In one embodiment, the 'plasma generator includes: the first (electrical («e nng) ' along the edge of the stage belt = ft shielding unit edge portion configuration; and the power supply, IS ring to generate plasma . In the embodiment, the plasma generator further includes an antenna (the peripheral portions of the board are spaced apart and generate electricity (4). Applying electric power to generate plasma to the stage. In one embodiment, the plasma generator includes peripheral portions spaced apart; and a power source that applies power to the antenna to the substrate, and another aspect of the present invention is to manufacture a substrate processing device. The substrate processing apparatus comprises: a plurality of substrates for accommodating a garment; a primary processing chamber, performing a manufacturing process for performing a semi-process chamber, and performing a secondary transfer chamber for the rear surface of the substrate, adjacent loading - Locking chamber, primary processing chamber and "and Zhizhi 9 200845268. In one embodiment, the loading_locking chamber, the primary, the processing chamber includes contact with the transfer chamber (4) the part ^ city and the secondary primary processing chamber, and the secondary process Each interior of the chamber = person, chamber, transfer space connected or separated. Two 3 and the transfer chamber In one embodiment, the secondary process chamber includes: solid -) 'used to fix the substrate so that the rear of the substrate Surrounding the surface of the chamber In the environment; supply unit, for: road-under-stage, upper; lifetime, after the substrate is shielded from the substrate: phase == further includes plum, used in one embodiment, the plasma generator includes Turning on and facing the rear surface of the substrate, the power supply is applied. In the embodiment, the distance between the surface of the electrode and the substrate is greater than the second distance between the surface of the shielding unit and the front surface of the substrate. In the embodiment, the device is further configured. There is a chaotic injection through the shielding unit to inject an inert gas onto the front surface of the substrate. Ben: A substrate for manufacturing a semiconductor device is further provided. Accommodating a plurality of primary #to, performing a manufacturing process for manufacturing a semi-conducting material, performing a process on a peripheral portion of the substrate; a second: 200845268. a two-base plate; and a transfer chamber 'adjacent to the chamber, Having the base (four) from the secondary process chamber and the second secondary chamber, the first secondary process chamber, and the I chamber f loading/locking chamber, the primary process in one embodiment, between: the secondary process chamber Transfer Ο Ο clothing ~ (10) in contact with the transfer chamber Inter-components, such that loading/locking;,, and ===== each internal space of the process chamber is in contact with the transfer chamber; the third pass; f, the peripheral portion of the substrate is executed and the transfer chamber is adjacent to A 4 = post-fetch process; thus, the transfer chamber is transferred between the first process chamber and the second process chamber. In one embodiment, the substrate processing apparatus further includes a test chamber shot! Tctlon chamber The inspection chamber is adjacent to the transfer chamber, and the substrate on which the last casting process has been performed is inspected in the inspection chamber. In the embodiment of the iri embodiment, the transfer chamber further includes a transfer material, the transfer order, and the rotation is connected. To the blade ae) of the main body, to turn the substrate by the blade. /, heart ί-! In the embodiment, the first peripheral part of the first process m is the result of the fruit, and the reading of the second part of the bribe is fresh ___ One side simultaneously performs the first process and the second process t Μ the rear surface side module and the second rear surface (four) module, respectively performing the third process and the 200845268 four on the back surface of the substrate and the fourth substrate Money engraving process. In one embodiment, the transfer chamber includes: a first transfer unit that transfers the first earth plate/the first substrate to the first peripheral portion, the engraved and the second transfer unit, and the third base:: Transferring to the first-back surface side module and the second back surface secret module Γ In a real complement, the substrate processing apparatus further includes a loading device for accommodating a plurality of substrates. In one embodiment, the substrate processing apparatus further includes loading a crying t and attaching the substrate from the outside of the device to the carrier for aligning the substrate. The substrate is processed by step H, and the substrate processing apparatus further includes an inspection member for verifying the substrate connected to the load-lock chamber. Ο The present invention further proposes a method of manufacturing a semiconductor device by subtracting a chamber from a transfer chamber and transferring the substrate to a primary f to reduce the fabrication of the semiconductor device. : Hunting transfers the substrate from the transfer chamber to the secondary-second process chamber, and Meituo = partially executes the process. The unloading to the first secondary process chamber is carried out by transferring the (four) substrate into the lock chamber. In one embodiment, the pair is first directed; the transfer chamber is loaded. In this embodiment, when the substrate is sub-locked to the palace, the peripheral portion of the substrate is subjected to further inspection after being unloaded to the load-negative ,, then 贞〇ο In 200845268, process defects and pollutants were measured. In one embodiment, the step of the process chamber to form a thin primary process on the back surface of the substrate after transferring the substrate to the second pass of the second etch process y etch process or after: The deposition process is a method in which a substrate is patterned on a substrate to form a pattern, a thin layer on the substrate is partially removed, and the substrate is processed from the same device in which the substrate is loaded. The chamber is loaded into the transfer chamber, and the substrate is transferred to the primary process of manufacturing the semiconductor device. After the error, the substrate is transferred from the transfer chamber to the second ^ 3 to the loading chamber. Transferring the substrate from the secondary processing chamber by the transfer chamber. The invention further provides a method for converting the substrate from the first-money engraving module by the method of treating the substrate with the #心/processing substrate in the same molding process, and In the second engraved mode, the elbow (four) i brother engraved right group. Then, a second #etch process is performed on the back surface of the substrate at the -f. In one embodiment, a plurality of substrates are simultaneously in the first etch process. In the embodiment of the heart 4 and the second money, the substrate is flipped first, and then the base is::, so that the rear surface of the substrate faces in the second module, and in the Leqin module, under. According to the invention, the silk can be transferred between her private parties without being exposed to the atmosphere. In addition, the peripheral J3 200845268 engraving process and the back surface etching process can be performed in the same device, and the etching time of the side etching process and the back surface etching process, 1 improves the manufacturing efficiency of the conductor device. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the preferred embodiments of the invention. The description of the invention is shown in these figures. However, the present invention can be embodied in the form of a 222. In order to make the disclosure more detailed, the scope of the disclosure is fully conveyed to those skilled in the art. In the drawings, the dimensions and relative sizes of the layers are enlarged for the sake of clarity. It is easy to understand that when it is mentioned that the component or layer is located on another component or sound, the component is "connected to," or "synchronized 5|丨,, brother-1曰: 'this element or layer Can be directly located in another cow directly connected to, or "direct = layer, a same section. Rod phase: the number represents any or all of the groups of related enumerations ^ or includes an easy to turn is Although the second, the third, and the like describe different parts, layers 14 200845268 and/or components, these elements, components, zones, and are limited by these terms. These terms are only used to refer to a component, layer or component to another region, layer or component. The first discussion below may also be referred to as the second component, component, component, region, layer in the specification without the teachings of the components, components, and the teachings. : or parts. Ο 面 face, "below", "above,", "DD", for example, "describe the elements or features of the scales in the figure", etc., in terms of the relationship between the parties. It is easy to understand that, in addition to the orientation shown in the figure, the position is shown in the figure. For example, if the term of device 2 in the figure also includes a member or feature "below," or ", at the end, located on top of other elements or features, "::, /, will become located above and below the other elements. 2 弋 5 brothers, the term "below, can be packaged (rotation 0. "Two orientations. I can also use other parties (suspicious to change the degree or other. His way of the position and space to recognize this Lang The term used in the book is not the term used in i R. It is only for the purpose of describing each particular case, and it is not limited to the limitation of the yoke case, but "TM", "- species, month". The singular form of the explicit table is more "the plural also includes the plural unless otherwise included" and / or "includes, the easy solution θ is, when the term "package operation, component and connection" is used in the specification to indicate the existence The features, integers, steps, other features, operations, but sub-areas do not preclude the presence or addition of one or more of the descriptions are:;; operations; component two components and/or their ethnic groups. ', ,, % A schematic cross-sectional view of an idealized embodiment of the invention

Ο 200845268 厶 / JV / V / jJi · 丄 (with intermediate structure) to describe an embodiment of the present invention. Likewise, graphical distortions due to, for example, manufacturing techniques and/or manufacturing tolerances should be expected. Therefore, the embodiments of the present invention should not be limited to the specific shapes of the regions described in the specification, but also include, for example, the variations produced during the manufacturing process. For example, an implanted region depicted as a rectangle may typically have a circular or curved feature//or an edge of the implant concentration gradient in a fine rather than a binary different from the implant concentration gradient in the non-implanted region. . Similarly, a buried area (buried r_n) formed by implantation (imPlantation) can cause an implanted area between the buried area and the surface through which implantation takes place. Therefore, the regions shown in the figures are schematic in nature, the shape of which is not the actual shape of the region in the device, nor is it intended to limit the scope. Further, unless otherwise specified in the specification + all of the terms (including scientific and technical silk) are the same as those commonly understood by those skilled in the art. It is more common to understand 岐, such as GM: those terms defined in the Code should be ideally or too formal with the previous technical terms, unless it is explicitly stated.曰1 Example 1 Fig. 1 is a structural view showing a manufacturing apparatus for manufacturing a semiconductor device according to a first embodiment of the present invention. Figure 2 is a cross-sectional view of the substrate processing chamber shown in Figure 2, the process chamber, and Figure 3 is a cross-sectional view of the ^^ secondary process chamber shown in ®! Figure 4 is a cross-sectional view of the substrate processing apparatus of the first embodiment of the present invention. Figure 5 is a manufacturing of the first embodiment of the present invention = 16 200845268 f, the improved structure of the board processing apparatus Fig. 6 is a perspective view of a modified primary processing chamber of a garment shown in Fig. 5, and Fig. 7 is a cross-sectional view of the modified secondary processing chamber of the substrate processing shown in Fig. 5. 7. Substrate at the substrate according to the first embodiment of the present invention = clothing 9G0 includes a transfer chamber_, a manned_locking chamber, a primary process to, a person, 'and a private to 4 (10), and a test chamber 500. In one embodiment The load_locking chamber 200, the primary processing chamber 300, the secondary processing chamber 400 Γ o, and the inspection chamber 500 are disposed around the transfer chamber 1〇〇, and the disc transfer chamber is in contact. 〃 s Lock chamber 200, primary processing chamber· The secondary processing chamber 400 and the extinguishing chamber 500 are, for example, maintained in a vacuum state, and the secondary processing chamber includes a portion engraved to the last portion of the substrate. The transfer chamber 100 is also maintained in a vacuum state, for example, and the substrate 10 is The transfer chamber 100 is transferred between the process chambers around the transfer chamber 100. That is, The transfer chamber 100 enables the substrate 10 to be transferred in a vacuum state. In detail, the substrate 10 is transferred from the load-lock chamber to the primary process chamber by the transfer (four) 100, and the substrate 1G to be unloaded from the initial (four) process chamber. And loaded into the secondary process chamber 400 by the transfer chamber 100. Further, the etched substrate 10 is completely unloaded from the secondary process chamber and loaded into the inspection chamber 500 by the transfer chamber 100. After the inspection process in chamber 500 is completed, substrate 10 is unloaded from inspection chamber 500 and loaded into load-lock chamber 200. In one embodiment, transfer chamber 1 includes: transfer unit no' Transfer substrate 10; and vacuum controller (v_m contr〇Uer) (no edge) is used to control its vacuum state. For example, transfer order 17 200845268 Z, / ^J\J\JULX Where 110 includes the robot ( When the robot is used as the rudder 110 to transfer the substrate 10, the substrate 1 may not be aligned with the upper end portion of the machine. Therefore, the alignment structure can be mounted on the transfer chamber. To compensate for the misalignment of the substrate K) - in one embodiment, The shift chamber (10) includes a plurality of transfer _ m (as shown in Fig. $) to improve the efficiency of processing the substrate 10. For example, when performing a primary process (e.g., a deposition process) on the first substrate in oo, the second substrate can be transferred. Up to the loading_locking chamber, this | f can simultaneously transfer the first substrate and the second substrate to the primary processing chamber 3 and the secondary processing chamber 4 by a plurality of transfer units m. In the example, the load lock chamber 200, the primary process chamber, to 4, and the test chamber 500 are connected to the transfer chamber (10). Details are as follows: in the second lock chamber 200, the briquetting chamber 300, and the secondary processing chamber 400. Both include an open member that is in contact with the transfer chamber 100. Each ==including the fourth to fourth cap gatevalve) 2Qi, view two ^ 501 〇 100 ^ 1 and 501 are disposed on each side wall of the transfer chamber 100, thus the 'load-lock chamber 200, the primary process chamber, The secondary process _ _ through these connections to the transfer room = manned, fixed room, primary process room 300, _,,, Yi Zhi to 400 and laboratory 5, such as the primary process (such as #制f The material is private (10) surrounding process (such as the peripheral part of the listening board ^; process), secondary and W clothing ^ can be performed simultaneously under vacuum. In another device similar to the diagram shown in 200845268 z/juupil 1 Separate to ιυυ, as shown in Fig. 5. In detail, the load-lock chamber 200, the primary process chamber 3〇〇 are disposed around the transfer chamber 100 in the secondary process chamber 400, and the inspection chamber = the transfer chamber 100 is separated, And adjacent to the load-lock chamber 200. Thus, the substrate for the primary and secondary processes can be moved to the inspection chamber 500 by the load-lock chamber 200. In one embodiment, the circumference of the transfer chamber However, a plurality of primary processing chambers 300, a manned-locking chamber 2A, and a squatting chamber 400 are disposed. At atmospheric pressure, the substrate 10 is loaded into the lock chamber 200 from the outside of the device 900, and the processed substrate 10 is unloaded from the load-lock chamber 2 to the outside of the device 900. For example, loading, chamber 2 The 〇〇 may include a holding unit (not shown) for accommodating the base: and pressure control (not shown) for controlling the internal pressure in-locking chamber to further include an aligning member (without a rim) Shown, material = substrate 10. The load-lock chamber 200 is connected by the first :2〇1: the cutting. The loading/locking chamber 2〇〇 can be divided into the wheel-out chamber 2_, as shown in FIG. Wherein, the bare substrate to be placed in the input chamber 200a is placed in standby, and the dice is moved to the primary processing chamber 300. The phase is transferred to 100 or transferred from the inspection chamber. ^ Substrate from the secondary process so - to 'bare substrate with the treated substrate; room spare. The substrate is contaminated, and the I ψ 疋 疋 , , , , 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可Cost and time. 300, and the bare substrate in th, also f is transferred to the primary P裎 Palace and sealed this bare base rebellion In the consistent application, the primary 19 200845268 Z./JUUjJll process may include: a deposition process to form a thin layer on the substrate 10; and an etching process to pattern the thin layer to form on the substrate 10. Pattern structure. No Figure 2纟 shows the primary process chamber 3 (8) for performing the deposition process. In one embodiment, the 'primary process chamber 300 includes: a second gate valve 3〇1, connected to the transfer chamber 100; a support table 310, used to support the substrate 1 〇; gas into the? § 320, injecting process gas onto the substrate 1; a temperature controller (not shown) for controlling the internal temperature of the primary process chamber 3; and a discharger 330 for discharging residual gases and by-products Primary system % room 3 (8). In one embodiment, the gas injector can be coupled to a gas supply unit 34 that supplies process gas. The plasma generator (not shown) can be placed in the primary process chamber 3〇〇. In an embodiment, the fulcrum 310 includes an electrostatic chuck (elec plus statk = 〇, in this embodiment, is based on the electrostatic chuck material), but as known to those of ordinary skill in the art Can be used, other support. The configuration surface of the substrate can be placed on the substrate 1 at the beginning. Or a single two 311 gingival 310 can be a female heater or cooler 3 1 'to (4) Substrate temperature. The gas injector 32Q may include a showerhead iJ:Terhead)' and the process gas includes various source gases to form various thin layers (eg, germanium, semiconductor layers, and metal layers); The gas injector 320 and the plasma generator can be body-shaped. For example, a portion of the gas=injector 320 can be used as an electrode to generate electricity. In addition, the primary processing chamber 3 can include a surname chamber for rhyming the substrate 20 200845268 〇, or Please refer to Figure 6: 1: Thin layer on top, as shown in Figure 6. Including: the second closed compartment 3 = ^ 的 的 的 的 的 的 ^ ^ ^ ^ 基板 · · · · · · · · · · · · · · · · · · · 转移 转移 转移 转移 转移 转移 转移 转移 转移 转移 转移 转移 转移 转移 转移 支 支 支The gas is injected into the substrate 10 source 370, and a plasma power power source is applied 38 〇 360; ^ bias a • primary process 2. = force (the residual gas in a fairy ^ is more packaged - the 33G, the primary process room • ~, the limb 'a field ^ product is discharged. In one embodiment, the supply of gas to the processing gas, used for ancient \ The 兀50 may be connected to the upper end electrode 360. The 〇50 may include: a chuck 351, and an edge ring 352, along which the upper electrode portion of the chuck is disposed on the upper electrode 360 to include a plurality of perforations (Qingjiao toe It is arranged in a circle below the gas injector 32. Although this embodiment discloses: o

The terminal electrode 36G is disposed below the gas injector, but as is known to those skilled in the art, the upper electrode can also be disposed on the = injector 320 or in the gas injector 32. In addition, the upper end 360 is electrically connected to the plasma power source 37, so that the plasma ^ 370 can apply power to the upper electrode 36 〇 to generate plasma in the primary process chamber 3 (10). In the present embodiment, the process gas includes an etch gas for etching a thin layer on the substrate 10 or the substrate 10. The support table 350 is electrically connected to the bias power source 380, so the support table 350 is applied with partial power. In one embodiment, the primary process chamber 300 includes a capacitively coupled plasma (CCP) process chamber, inductive light coupling, and the inductively coupled plasma (ICP) process chamber, electron cyclotron resonance Electron cyclotron resonance plasma (ECRP) process chamber and surface wave plasma (SWP) process chamber. In addition, when the primary processing chamber 300 is used to perform an etching process, the primary processing chamber 300 may further include an ashing chamber or a cleaning chamber for removing the photoresist layer and the hard mask. A hard mask layer and particles of a central portion of the substrate 10. In the present embodiment, the primary processing chamber 300 includes a deposition chamber and a residual chamber as an example, but any other process chamber for manufacturing a semiconductor device known to those skilled in the art can be used as the primary processing chamber 30Q. . When the substrate 10 completes the preliminary process in the primary process chamber 300, the substrate 10 is transferred to the secondary process chamber 400, and excess layers and particles of the peripheral portion of the substrate 10 can be removed. Therefore, it is possible to prevent the pattern structure of the central portion of the substrate 1 and the substrate from being broken by excess layers and particles in the peripheral portion of the substrate 1 . The central portion of the substrate 10 refers to the remaining portion of the substrate 1 except for the peripheral portion or the bevel portion. In summary, the pattern structure of the semiconductor device is on the front surface of the central portion of the substrate 10. As shown in FIG. 3, the secondary processing chamber 400 may include: a stage 41 〇 on which the substrate 10 is placed; and a shielding unit 420 disposed above a central portion of the ,, such that the substrate 丨The central portion of the crucible is covered by the mask unit 420 to direct the process gas to the peripheral portion of the substrate 1; and the slurry is generated 430 for generating plasma. In one embodiment, the plasma generator 430 includes a lower electrode ring 431 along the stage 41 22 = 22 200845268

2/3 UUpiI :::: two-position 'top electrode ring 433, along the edge of the shielding unit 420, the power source 435 is used to apply power to the lower end of the chamber. It may further include gas supply = 42_ and _ gamma 'Used to discharge the Erli gas and by-products. Stage 4Κ)

The Si portion is provided with a portion (Pr°trUSi〇n), the shape of the raised portion is ο ο and/or the shielding unit ΐϋΐ . The Π private movement of the door of the unit 410 of the stage 410 is controlled to control the stage 410 and the convex portion of the shield to be placed on the substrate of the stage 410, and the heart is positioned early to make its convex portion abut. The central portion of the plate 5 is exposed by the stage 410 and the peripheral portion of the substrate 1 in the shield unit 400, and the peripheral portion of the substrate 1 is exposed to the side of the process chamber as early as possible. In the present embodiment, the inside of the substrate 10 is exposed. Knife ~ Xiaotu board! The periphery of the crucible is about 11 to 5 mm, and the lower electrode ring 431 is disposed around the stage 4 and the electrode ring 433 is disposed on the convex portion of the shielding unit: the sub-gate and the end are located on the substrate 10 The side of the surrounding part. The lower peripheral portion is between the first and second convex portions of the upper portion of the insulating material Awn electrode assembly 433 and the convex portion of the shielding unit 42: a pitch. For example, the lower electrode ring 431 = split, planted to produce Jing, so that the periphery of the 'production = the periphery. The convex portion of the shielding unit 420 and the upper portion of the substrate are irradiated with the gas to the peripheral portion of the substrate 10 by 200845268 ... υμι丄. The lower electrode ring 431 is connected to the plasma electrosurgical cutter as is known to those skilled in the art, and may also be "two to the upper electrode ring 433, and the lower electrode ring 431: two, (4) plasma power is applied to the lower electrode On the ring 431, when i is to the peripheral portion of the substrate 1Q, the process gas is formed in the (four) between the upper 433 and the lower electrode ring 431 as an excess layer of the portion between the plasma and the substrate 1Q and the particle = reaction Excess layers and particles on the substrate 10 are engraved by the last name. - 次级 The secondary process chamber can be modified to the configuration shown in Figure 7. The improved #t chamber can include: the stage, reading the substrate 1〇 The peripheral portion of the substrate 10 is not torn by the stage, and is disposed above the central portion of the substrate 1 , covering the base = , the central portion 'and exposing the peripheral portion of the substrate 1 ;; and the upper electrode lowering the lower electrode 460 'arranged above the peripheral portion of the substrate 1G, the antenna 47 is spaced apart from the peripheral portion of the substrate 10 in the periphery of the substrate 1 in the process chamber 4, and the sealing member gamma, the antenna 470 and the process chamber 400 The surrounding environment is isolated. The process chamber may further include: a gas supply unit right to supply the processing gas to the peripheral portion of the substrate 1 through the shielding unit 420; and: a Liu, applying power to the antenna 470. In this configuration, used to generate The high frequency voltage of =, is applied to the antenna, and the upper end electrode 455 and the lower end electrode are 24 Ο ο 200845268

The 2/DUUpiT 460 is grounded in a % manner and the stage is biased. The upper electrode 455 is disposed around the shielding unit 42A, and the lower electrode 46A is disposed around the stage 410. Since the electric power applied to the lower end electrode 460 is different from that applied to the stage 410, the insulating layer 461 is interposed between the stage ϋ 410 and the lower end electrode 460. One of the lower terminal 460 and the upper electrode 455 can be omitted depending on the process environment. Further, the secondary process chamber 4A may include an upper body 402 and a lower body 403. The sealing member 48A may include a ring extending from the lower body to the upper body 402. Therefore, in the modified process chamber 4, the inner region of the sealing member 48 is spatially separated from the outer region. The secondary process chamber for the peripheral portion of the side substrate 1 or the cleaning substrate 10 may have various configurations depending on the process for generating the electropolymer. In one embodiment, the inspection chamber 500 is already in the primary processing chamber 3 In the middle of the process, the substrate 1G is subjected to the round defect inspection, or the substrate 1Q in which the secondary process has been performed in the secondary process chamber is subjected to the secondary process defect inspection. In one embodiment, the inspection chamber 5 (8) includes: a center portion of the pedestal '510, 'the pedestal substrate W, such that the peripheral portion of the substrate 1 不 is different, the object 510 is covered, and the inspection tool 52 〇 is used. To check the kitchen surface of the substrate (7). For example, the lock inspection tool 520, which is configured to be flat or convex, may include a camera unit UamemuniO and a knife unit and is disposed above or below the substrate 1A. In the present embodiment, the Lt tool 520 is disposed, for example, above the substrate 10, which is movable around the axis g and around the substrate K), so that each of the regions on the substrate 1G can be inspected by the inspection tool 52G. The camera unit may include: first 200845268

The Z/DUUpiI uses a crack defect on the top substrate 1 and a second camera to detect the size of the peripheral portion of the substrate 10. The first camera can take the size of the substrate 1Q ^ / knife. («image) Judging this digital shadow silly I丕 古列月日不”" monthly part of the system. Photograph of the side part == two, = machine can be on the substrate 10 ° plate ° electric _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 500. , 定室 ί 1 (1 ^ device 9QG external load to load 〇 (4) real f = _ _ force reduction job transfer room (10) inside _ please turn two: two: unit 110 fine reverse 10 from load-lock Process, in the substrate 10 (four) rn. Primary preparation may include: deposition or substrate 10 _ £ each, '' and S' and the engraving process, money engraved substrate 10 moved back to the transfer chamber ·: two 4 boards 10 from the initial stage The process chamber 3 is transferred to the secondary process chamber 400 and then transferred to the secondary process chamber 400. In the peripheral portion, the particles and excess layers of the peripheral portion of the substrate 200845268 2/^υυριΐ ίο are removed by the peripheral portion. Then, the substrate 1 The transfer is transferred from the process chamber 400 back to the transfer chamber 100. Then, the substrate 1 is transferred from the transfer system to the inspection chamber 500. The inspection tool 520 checks whether the substrate (10) portion and the peripheral portion have process defects and particles, respectively. , the sense, ^ transferred from the inspection room 500 back to the transfer chamber 1〇〇, and then stacked back into the load chamber 200. The money substrate 1〇 from the load_lock chamber was external to the ^ ^ ^ 900. In the embodiment, the transfer chamber 100, the primary process chamber 3, the "process chamber 400, and the test chamber 5 (8) are in Under similar pressures, the protection is in the same vacuum state. According to the first embodiment of the present invention, the primary process performed by the board (for example, the deposition process and the etching process, such as the peripheral portion of the substrate execution) Process ^ and inspection 2 are performed in the same device to avoid exposure of the substrate to the atmosphere and subject to the implementation of the 岐 、 deposition, (4) m-process and Ο Ο process in the same device, but the deposition process Disk technology = any other surface etching process in the field having the usual knowledge. It is also possible to implement the device and method thereof in the same device as the second embodiment of the present invention. The detailed description of the same reference numerals in the word-representing the first embodiment of the present invention will be omitted. n-piece, and thus the same element embodiment 2 27 200845268 27ί>ϋϋριί , 8 is the second embodiment of the present invention FIG. 9 is a cross-sectional view showing a secondary processing chamber of the substrate processing apparatus shown in FIG. 8. Referring to FIG. 8 and FIG. 9, a second embodiment according to the present invention is shown. Base The processing apparatus 1000 includes a transfer chamber 100, a load-lock chamber 2, a primary process chamber 300, a secondary process chamber 6A, and a test chamber 5A. In one embodiment, the secondary process chamber 600 can be executed An etching process is performed to remove contaminants and/or particles on the surface of the substrate. For example, in the primary processing chamber 300, a thin layer may be formed on the substrate 10, and the thin layer may be etched to form a pattern on the substrate 10. In the secondary process chamber 600, excess layers and particles on the surface of the substrate 1 can be etched away. When a thin layer is formed on the substrate 1 in the primary process chamber 300, the process gas is usually dispersed on the substrate. A space between the support table 310 and 10 forms an excess layer on the rear surface of the substrate 10. The excess layer on the surface after the substrate 1 会 causes the substrate 1 to be bent and/or deformed in subsequent processes. In the second embodiment of the present invention, the excess layer on the surface after the substrate 10 is removed to prevent the substrate 10 from being bent and deformed. In an embodiment, the primary process chamber 300 and the secondary process chamber 600 are coupled to the transfer chamber 100 by a first gate valve 301 and a fifth gate valve 601 such that the substrate 10 can be transferred from the primary process chamber 300 to the secondary process chamber 600. It will not be exposed to the atmosphere. The transfer chamber 100, the primary process chamber 300, and the test chamber 500 in this embodiment are substantially the same as or similar to the first embodiment of the present invention, and thus at 28

ο 200845268 ζ/^υυρίΐ Any description below is different from the description of the present invention. Among them, has a circular body::: two _ turn: the center of the chamber 100' transfer chamber 100, with the brake g Μ 矛 矛 夕 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置 配置Unit 110 In one embodiment, the PM A process chamber 600 used to perform the post-surface etching process may include: (1) a rear-surface support (10) of a secondary (four) secondary, a branch plate 1G, such that the substrate is Η) = 7 above the table (4), above the table, the back surface 1 of the wire plate 10 is supplied with a covering base; the lightning generator 640' generates plasma in the process chamber _; the second gas supply ς 兀650 ' supplies inert gas to the substrate ^ white surface through the shielding unit 62 ;; an elevator 660 moves the support table 61 上下 and the ejector 670 up and down, and discharges residual treatment 1 and j in the process chamber 600

product. In the W1-embodiment, the support table 61G includes: a horizontal projecting member for supporting the rear edge portion of the substrate 10 such that the rear surface of the substrate is exposed to the surrounding environment; and the vertical extension The member extends from the water = projecting member to the lifter 660. The horizontal projecting member is configured in a toroidal shape, and the substrate 10 is placed in this ring. In one embodiment, the horizontal = exit member includes a beveled surface for guiding the substrate 10; and a flat surface in contact with the rear edge portion of the sheet 10. Therefore, most of the rear surface 29 of the substrate 10 is exposed except for the rear edge portion which is in contact with the plane of the horizontal projecting member. The vertically extending members are fixed to the lifter 660, so that the horizontal projecting members are also fixed to the lifter_, and the horizontal projecting members are moved up and down with the lifter 660 so that the substrate 1 is input or output to the process chamber 600. In addition, the use of lifter 660 helps control the spacing between substrate 1 and shield 620. The mask unit 620 is configured to have substantially the same planar shape as the substrate 1 and is located above the substrate 10. In the present embodiment, the shielding unit 620 is disposed on the bottom surface of the process chamber_ as shown in FIG. The size of the cover 62 is greater than or equal to the size of the substrate 10, and the cover covers the front surface of the substrate. In addition, the shielding unit (4) can be used as an electrode, so the shielding = 620 can be grounded in a material manner, or the surface unit can be biased eight: Ϊ Ϊ Ϊ Ϊ 620 620 620 620 620 620 620 620 620 Crotch zone and electrode zone. The through-body supply unit (4) may include: a second gas injector (6), upper .::::620 'injecting an inert gas onto the front surface of the substrate 1 , and a slave gas reservoir 652 for receiving The second gas (four) Qianzi (four) ^, and even the unit (four) Git L. Therefore, the inert gas is injected into the space between the surfaces of the etched rain to avoid the supply of the process gas to the front surface of the substrate 10. The gas-apartment supply unit 630 may include: underneath, injecting a process gas into the substrate "the rear table is connected to the first; the memory 632' is used to store the process gas, and may include a lotus root: a thief 63, for example, The first gas injector 631 is configured to increase the uniformity of the process gas injected onto the surface of the substrate 1G by 30 200845268 27500 pif. The plasma generator 640 may include a power source 642, Ο ο and a plasma electrode 641, depending on the power, The electric power is supplied to the substrate 1; the plasma electrode 641 is disposed on the upper surface of the first gas injector 631 around the rear surface of the substrate 1 , as shown in FIG. 9 == lower: square and The hole includes a plurality of holes respectively corresponding to the first gas injection. In the embodiment, the distance between the substrate 10 and the electric device is greater than that of the substrate 10 and the shielding unit 62. The second spacing between the rabbits 1 is less than about 〇lmm to 〇.5mm, and the spacing between the upper and the second is. If the second space between 620 is too small, it will result in no-reverse, = and shielding units. Raw plasma, thus only on the substrate 10 and the plasma electrode = second space stem A plasma is generated in between. The lifter 660 can move the first empty substrate 10 between the upper and lower sides, the shielding unit 620, and the strut 610 to control the pitch and the second pitch. The first between the 4 (4) Transferred to the process chamber by the fifth gate valve is placed on the flat plate of the support table 61G. Then, the 'downer _ rises and moves upward, so that the substrate 1G ^ 遮 遮 620 620, and the plasma generator _ Interval-distance, - distance = = plate Κ) and the plasma electrode 641 in the first space to generate electrical equipment, Ι apply power to the plasma electrode 641 'processing gas in the first space Μ The excess layer and particles on the substrate 10 are chemically and chemically affected, and can be removed. The anti-substrate 10 is transferred from the primary processing chamber 300 to the secondary processing by the transfer chamber 100 which is also in a vacuum state. Room 6〇〇, so that the substrate 1〇 is not exposed to the atmosphere of 31 200845268 Z/MiUpii γ, 600. As in the field = primary 4-way chamber 300 is transferred to the secondary process chamber to the secondary process chamber, there are ^ As far as the knowledge is known, the substrate 10 is transferred to the substrate 10, which can be Move to the clean room (not shown). After moving to the inspection room 500=after the surface surname process, the substrate 10 is rotated, and the substrate ίο _= process defects and particles on the substrate 1G. 1(8) is transferred to the load-lock chamber 200, and is unloaded to the outside of the process chamber 600. ο ο# According to the second embodiment of the present invention, the primary process performed on the substrate, such as a deposition process and a remnant process, The stage process (eg, the back surface etch process performed on the substrate) and the inspection process can be performed in the same device to avoid exposure of the substrate to the atmosphere and contamination. Although the above embodiments disclose that the deposition/etch process and the back surface etch process can be performed in a single device, as is known to those skilled in the art, the deposition/etch process, the back surface etch process, and the peripheral portion etch are known. The apparatus may also perform the following detailed disclosure in the same apparatus as a third embodiment of the present invention, and a method and method for performing a deposition/etching process, a back surface surname process, and a peripheral part etching process in the same apparatus . In the following description, the same reference numerals denote the same elements as the first embodiment of the present invention and the second embodiment, and thus detailed description of the same elements will be omitted. (Embodiment 3) Figure 10 is a configuration diagram of a board processing apparatus for manufacturing a semiconductor device according to a third embodiment of the present invention. Figure 11 is a first modified structural view of the substrate processing apparatus 32 200845268 275ϋϋριί shown in Figure 10, and Figure 12 is a second modified structural view of the substrate shown in Figure 1A. According to FIG. 10, a substrate processing apparatus 1100 according to a third embodiment of the present invention includes a transfer chamber 100, a load-lock chamber 2, a primary process = 3 〇〇, a first secondary process chamber 400, and Second Secondary Process Chamber 6: In one embodiment, a thin layer deposition process is formed on the substrate and an etched substrate 10 or a thin layer is formed to form a patterned structure on the substrate 1 掣浐Executed in the process chamber 300. The first etching process for removing the dye and/or particles of the peripheral portion of the substrate 1 can be performed in the first secondary processing chamber 4 (8) = while the first etching of the contaminants and/or particles on the surface after the substrate 10 is removed The process can be performed in the second secondary process chamber 6 (8). • The third embodiment of the present invention allows the deposition/etch process, the peripheral partial etch process, and the back surface etch process to be performed in the same device. Therefore, the substrate 10 is prevented from being exposed to the air to reduce the degree of oxidation of the substrate 10, and the substrate 10 is prevented from absorbing contaminants. In addition, the transfer path of the substrate 1 can be greatly shortened to shorten the processing time for manufacturing the semiconductor device. The transfer chamber 100 can be configured in a polygonal shape depending on the process environment. In the present embodiment, the transfer chamber 100 is configured as an octagon, as shown in Fig. 10, no. The load-lock chamber 200, the primary process chamber 300, the first secondary process 400, and the first secondary process chamber 6 (8) may be provided by the first gate valve, the first gate chamber 301, the second gate chamber 401, and the fifth gate 6 〇 1 is connected to each side wall of the octagonal transfer chamber 100. The bare substrate is transferred from the load-lock chamber 2 〇 0 to the primary process chamber by the transfer chamber 1 , , and the deposition process is performed on the bare substrate in the primary process chamber 2008 200845268 27500pif or :,. In one embodiment, the primary process chamber can be loaded into the room, and (4) the domain plate is in her-locked room. The substrate at the beginning of the present embodiment is referred to as a bare substrate, and the substrate on which the deposition process or the process is performed is referred to as a processed substrate (t read d substrate). Similarly, the substrate on which the second process (for example, the peripheral portion process) is performed is referred to as the substrate for the first process, and the substrate on which the second secondary process (for example, the surface of the cover is performed) is referred to as the second time. The treated substrate. Then, the processed substrate is unloaded from the primary processing chamber, and is rotated, K) 〇 and the m-level process chamber is, and after the treatment, "the general ^ room 300 is unloaded, and another bare substrate is loaded into the primary two = Qin in the brother - The secondary processing chamber 400 performs a process on the processed substrate such that the processed substrate = thus the transfer path of the processed substrate between her processing chamber and the secondary processing chamber 400. 'The first-time processed substrate from the first time, depends on the transfer chamber (10) and the second secondary process chamber _, and: the younger-human processed substrate - from the first secondary process chamber 4〇〇 Suppressing a processed substrate is loaded into the first-second process chamber. In the second-second process, the second-order process is performed on the substrate after the first process, so that the substrate after the first process is processed. Excess layer and grain on the back surface ^ 200845268 27500ριί Second secondary system; room _;; =::: secondary process chamber. 舆, after 'second treatment of the substrate from the second secondary process chamber J straw is loaded into the load-lock chamber 200 by the transfer chamber 100, P: the substrate after the person is processed from the second secondary processing chamber _Unloading and the first processed substrate is loaded for the second time - Ο (10): Butterfly (4) editing and unloading, sequentially passing through the primary processing chamber 30 (), the second: the secondary process = refers to the first-level process Room 4 (8). This and the bare substrate can also pass the first-second process chamber 4〇〇 and the second second-order sequence through the primary process chamber 3〇〇 according to the order of the second substrate. The inspection room can also be installed on the side wall of the transfer chamber 1 ,, the sister will show. In particular, the transfer chamber can be installed without 'to detect particles in the peripheral part of the substrate, and the first = smile = in the second The test chamber is inspected to detect the substrate: t-based particles. The substrate after secondary treatment as is conventional in the art may be in the same-inspection chamber; the test chamber may also be separated from the transfer chamber. In addition, in the male embodiment, the inspection member 240 can be disposed in the load_lock 6 35 200845268 27500pif 200 instead of the inspection room 500, as shown in FIG. 11. The improved loading/locking chamber 200 can include: a receiving space 210 connected to the transfer chamber 1; a cassette unit 250 for accommodating the substrate 1; and loading The device 220 is interposed between the accommodating space 210 and the cassette unit 25A. In an embodiment, the loader 220 may include: an aligning member 23〇Y for aligning the substrate 10; and an inspection member 240 for The substrate 10 is inspected; and the robot 26 = is used to transfer the substrate 1 in the loader 220. The armor 10 is unloaded from the cassette unit 25 using a robot 26, and the alignment member 230 is used according to i is shown to align the substrate 10. Then, the robot 26 turns the aligned substrate 1 into the accommodating space 210. The substrate 1 in the accommodating space 21 转移 is transferred to the transfer by transferring 11 〇 In the room 100. Conversely, when the 兀 primary process and the secondary process are performed on the substrate 10 in the apparatus , 〇 , the processed board is transferred from the transfer chamber 100 to the accommodating space ^ by the transfer unit 110, and then by the robot 260 It is transferred to the inspection member 240. After the inspection system is completed, the substrate 10 after the processing is finished using a robot: two boxes 5: 兀 250. In one embodiment, the apparatus 1110 shown in FIG. 11 has its own primary process chamber 30. . In the present embodiment, the device VII, the thief, and the second primary process room are smuggled. ^In one embodiment, the improved process unit 1 of the process chamber 3 can be divided into the transfer chamber 1 and the first secondary lock chamber secondary process chamber 6〇0, the test chamber 5〇0, and Loading · Side part (4) system: = == Transfer room around 1〇0, so that Zhou Mengjin (1) “Heart 4 process and inspection process can be the same — 虽然. Although the above embodiment discloses the primary process room 36 200845268 27500pif The transfer chamber is separated, but any of its improved forms can be used as known to the processor. (4) 200 can be separated from the transfer chamber 1〇〇. Loading-locking chamber

The structure of the SiMtMA 囝13疋 fourth 实 plate processing skirt of the present invention. Figure M is a cross-sectional view of the secondary process chamber of the base; Referring to FIG. 13 and FIG. H, the tablet processing apparatus according to the present invention includes the basic test of the transitional month to the _ and the secondary system:: The second-order engraving process of the first-嶋(four)-two-lit surface can be performed after the sub-substrate process. Therefore, the first etching process: the straw is performed by the same in different process chambers. ~, Le - I engraved process does not need

The structure and function of the Cj's room and test room are the same as those of the present invention: the details of the actual phase described in the 32.2 embodiment and the third embodiment = how about the primary process chamber 3 (10) and the test room _== The "!" secondary process chamber may include: a peripheral partial etched 桓 group 7 〇 a 〇 板 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 执行 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 For example, the basis of the engraving process can be based on the particle type J. In this example, the plasma engraving process can be performed at 37 Ο

Q 200845268 27500pif Executed in the secondary process chamber 700. The etching module 700b can be configured/circumferentially. The trowel etching module 700a is the same as the rear surface of the four-piece blanking m chamber, or can be disposed substantially in one embodiment, the peripheral vertical etching chamber 7]0, Then use the ^ knife to engrave the module lion including the surrounding part (such as particles). The money is engraved away from the contaminant of the touch portion of the substrate. The south frequency voltage is applied to the positive electrode, and the lower end electrode of the etching chamber 710 is used to convert the gas into a plasma. Contaminants and electric paddles in the peripheral portion of the substrate are etched away. The κ hair reacts, so that from the peripheral portion of the substrate, the 饳I surface engraving module 7_ can be adjacent to the peripheral portion engraved, and 7GQa, and can include the rear table 72G. In the rear surface engraving module 700b, the smear (e.g., particles) on the surface of the substrate is etched away. The frequency is applied to the lower end electrode (not shown) of the rear surface side chamber 720 to convert the process gas into a plasma. The 5 dye on the surface behind the substrate reacts with the plasma, and thus is etched from the back surface of the substrate. The transfer chamber 100 may include a transfer unit 110 that is etched to the 710 and back surface etch chamber 720 adjacent the peripheral portion. In one embodiment, the transfer unit 11A includes a body (not shown) and blades (not shown) that are coupled to the body and rotate about its axis. When the contaminants in the peripheral portion of the substrate are etched away in the peripheral portion etching module 700a, the substrate is transferred to the transfer chamber 1 by the transfer unit 110. The transfer unit 110 rotates about its axis to turn 38 200845268 27500pif Ο Ο = substrate, and will lay the back of the substrate age class secret group crane:. That is to say, the direction of the in-service partial butterfly module a in the rear surface of the substrate is opposite to the direction in the rear table group 7_. For example, the rear surface of the substrate faces upward in the rear panel module 7_, and faces downward in the peripheral module 7_. The seams in the back surface of the module are m. The contaminants on the surface are engraved by the surname. That is, the transfer early 110 extracts the substrate from the peripheral portion of the engraved chamber 710, and transfers the base to the rear surface chamber 72G. Conversely, as is known in the art, the transfer unit extracts the substrate from the back surface # etch chamber and transfers the substrate to the peripheral portion etch chamber 710. - The peripheral portion of the etch chamber 710 and the rear surface surname chamber 720 respectively perform peripheral portion recording secret engraving, and the manned_locking chamber provides spare space for temporarily accommodating the substrate. In an embodiment, loading _, ',: 疋 to 200 includes: peripheral portion loading _ lock chamber, for example, bean internal conditions (eg, temperature, pressure, and humidity) depend on the peripheral portion of the etch chamber 71 The process conditions; and the rear surface manned. Locking chamber 鸠, its internal strip: (eg / 1 degree, | force and humidity) depends on the process conditions of the back surface magnetic chamber 7 plus. Therefore, the difference in the manufacturing conditions between the external thermal chambers 710, 20 of the device can be reduced. The structure of the load-lock chamber 2 (10) is the same as that described in the first embodiment, the second embodiment, and the third embodiment of the present invention, so any detailed description about the load-lock chamber 200 will be Omitted. 15 is a modified cross-sectional view of the secondary process chamber shown in FIG. The structure of the secondary process chamber shown in FIG. 15 is the same as that of the secondary process chamber shown in FIG. 14 except that a plurality of peripheral portion etching modules and a plurality of rear 39 200845268 27500pif surface touch groups are disposed in the clothing set 1200. The structure is the same. The peripheral portion etching module 7〇〇a includes: a first peripheral portion of the money, a module 700al, a peripheral portion engraving process for the first substrate, and a second peripheral portion etching module 7〇〇a2 , on the second side of the ο peripheral part of the process. In addition, the rear table secret engraving module 7 (10) includes: the first: the rear table secret _ group 7 purchase, the third substrate is performed on the back surface side, and the second rear table secret engraving module 2, after the execution of the fourth substrate The surface is crafted. As is known to those of ordinary skill in the art, the first substrate, the second substrate, the third substrate, and the fourth substrate can be the same or different types of substrates. Therefore, in the peripheral portion of the engraving module 700a, a plurality of engraving processes can be performed regardless of the rear surface engraving process; in the surface::= edge, the post-recognition can be performed on a plurality of substrates - _ human weeks Part of the rhyme process has nothing to do. In the middle part, the process part and the back surface surname are engraved *, and then the transfer unit can be provided in each peripheral part. For example, the transfer unit _ '70: medium-turn = material:, transfer the substrate to the peripheral portion to the rear table secret _ group · b ^ 4 shift member 11Gb 'transfer the substrate into the room _ 卩 ^ ^ Comparable islands include: transport plate The load-locking chamber 200b includes: an input chamber 40 Ο ϋ 200845268 27500pif 200bl for accommodating _ 钤屮宕 $ private to the rear surface etching chamber 720 In the substrate; and =. ' used to accommodate the output from the back surface etching chamber 720 from the circumference: the second sub-substrate is by the first-transfer member ii〇a ^70〇al fourth beauty; te Gan-^周坆口^ knife Etching the module 7〇〇a2, and the third substrate and the second transfer member 11〇b are transferred from the rear surface loading-locking chamber 200b to the first table, the module to the module 700b2, the rear surface etching module 700bl and the second The back surface is etched, 'the peripheral core etch module 7 〇〇a can selectively perform the circumferential centroid entanglement * etch process on the plurality of slabs, and the rear surface 彳 彳 module 7 can be more selective The substrates perform a back surface side process. Therefore, when the 1 side part and the back surface _ process are performed at different times, the ’ 卩 与 与 and the smear on the back surface can be more effectively erased by the respective surnames. In this way, the primary process and the secondary process performed on the substrate are performed in the device without exposing the substrate to the money. In addition, the peripheral boring and back surface engraving processes can be performed in the same space or in the process chamber to improve the process efficiency of the peripheral portion side process and the rear table etch process. Figure I6 is a flow chart of a method of performing a peripheral portion etch process and a back surface etch process in accordance with an embodiment of the present invention. Please refer to the item 16' to load the substrate into the peripheral portion chamber 10. For example, the substrate may include a thin layer formed on a front portion of the substrate Ο i) 200845268 27500pif; and then a pliable layer formed on a peripheral portion of the substrate. Temperature and pressure) ^ The internal conditions of the chamber 710 (for example, after the iron, the face + knife is exposed to the surrounding environment. The substrate, the circumference, the true gas supply to the peripheral portion of the lateral chamber claw, and in the example, the peripheral portion is projected ~"^ turns the parent into a plasma. In the implementation of the pressure, and the upper end of the electricity; & the lower end electrode of the second Γ 0 is applied around the periphery of the high frequency electricity. p hair water is produced in the substrate slurry A strong reaction occurs, and the part of the dye and the electric side is etched away every AU. The peripheral part of the substrate is etched away. / In the case of the 'peripheral part of the rhyme module, 7〇〇a can include multiple jij 匕:: at the same time The plurality of substrates perform peripheral portion closing; the efficiency of the peripheral portion etching process is promoted. The #移=矣 substrate is transferred from the peripheral portion side chamber 710 by the transfer unit 110 to the US cup, the surface (four) ^ 72G. From the peripheral portion side chamber 7) _ Round out: The blade in the breakable transfer unit 11G is turned over. Then, the back surface etch process 4- =1 ' is performed on the back surface of the substrate. The back surface etch module 700b may include a plurality of process chambers, so the substrate performs a back surface etch process to improve the back table _ =, The substrate is photographed 72G and enters the lock chamber 200. ^ Therefore, by the primary process chamber, the secondary process operation can effectively remove the contaminants on the surface of the substrate == 42 200845268 27500pif in the same device. ▲Although the above method of the present embodiment discloses that the peripheral portion is first executed and then the surface surname process is performed, as is known to those skilled in the art, the back surface etching process may be performed before the peripheral portion is executed. Narrative process. Ο According to an embodiment of the present invention, the primary process chamber and the secondary process chamber (the side portion #刻室 or the rear surface (four) chamber) are disposed around the transfer chamber, and the 晛2 plate is between the primary process chamber and the secondary process chamber. Transfer, and not in addition, the peripheral part (four) process and the post-surface surname are engraved and the surface is shot and executed. Therefore, the peripheral part process and rate can be shortened: the time of the heart process is increased, and the manufacturing efficiency of the semiconductor device is improved. The inspection room can also be arranged in the thorns and the lanes to perform the inspection and the contaminants on the rear surface (for example, the two kings X and the periphery of the substrate, and the present invention). The above has been disclosed in the preferred embodiment, and is limited to the present invention. Anyone who is familiar with the technique: the Asian or African is used to make a little more; the spirit of ==: =:; FIG. 2 is a cross-sectional view of the primary processing chamber of the substrate processing apparatus shown in FIG. 2; 200845268 27500pif FIG. 3 is the second processing unit of the substrate processing apparatus shown in FIG. Sectional view of the process chamber. Figure 4 is Figure 1. Fig. 5 is a cross-sectional view showing a substrate processing apparatus for manufacturing a semiconductor device according to a first embodiment of the present invention. Fig. 6 is a view showing a modification of the substrate processing apparatus shown in Fig. 5. Fig. 7 is a cross-sectional view of a modified secondary process chamber of the substrate processing apparatus shown in Fig. 5. Fig. 8 is a view showing the structure of a substrate processing apparatus for manufacturing a semiconductor device according to a second embodiment of the present invention. Fig. 9 is a cross-sectional view showing a secondary processing chamber of the substrate processing apparatus shown in Fig. 8. Fig. 10 is a structural view showing a substrate processing apparatus for manufacturing a semiconductor device according to a third embodiment of the present invention. The first modified structure C/FIG. of the substrate processing apparatus shown in Fig. 10. Fig. 12 is a second modified structural view of the substrate processing apparatus shown in Fig. 10. Fig. 13 is a substrate for manufacturing a semiconductor device according to a fourth embodiment of the present invention. Figure 14 is a cross-sectional view of the secondary processing chamber of the substrate processing apparatus shown in Figure 13. Figure 15 is a modified cross-sectional view of the secondary processing chamber shown in Figure 14. 44 200845268 27500pif Figure 16 A flow chart of a method for performing a peripheral partial etching process and a back surface etching process according to an embodiment of the present invention. [Main component symbol description] 10. Substrate 100, 100a, 100b: transfer chambers 110, 110a, 110b: transfer unit 200 In-locking chamber, 200a, 200al, 200M: input chambers f, 200b, 200a2, 200b2: output chamber 2 (Π, 3 (Π, 401, 5 (Π, 6 (Π, 7 (H, 701a, 701b: gate valve) 210: accommodation space 220: loader 230: alignment member 240 · inspection member one 250: cassette unit 260: robot cassette 300, 300a, 300b: primary processing chamber 310, 350, 410, 510, 610: support Stage 311: heater or cooler 320, 631, 651: gas injectors 330, 450, 670: dischargers 340, 440, 630, 650: gas supply unit 351: chuck 352: edge ring 45 200845268 27500pif 360, 431 433, 455, 460, 641: electrodes 370, 380, 435, 490, 642 · power supply 400, 600, 700: secondary process chamber 402 · upper body 403: lower body 420, 620: shielding unit 421: orifice 430, 640: plasma generator 461 insulation layer 470 antenna 480 sealing member 500 inspection room 520 inspection Tool 632 Process Gas Reservoir 652 Inert Gas Reservoir 660 Lifter O 700a, 700al, 700a2: Peripheral Part Etching Modules 700b, 700M, 700b2: Back Surface Etch Modules 710, 7101, 7102: Peripheral Part Etching Chambers 720, 7201 , 7202: rear surface etching chambers 900, 1000, 1100, 1110, Π 20, 1200 · substrate processing devices S10 to S30: operation step 46

Claims (1)

200845268 27500pif Patent application scope: 1. A substrate processing device for manufacturing a semiconductor device, a spoon loading-locking chamber for accommodating a plurality of substrates; and comprising: and performing a primary garment of the semiconductor skirts to Etching is performed on a peripheral portion of the substrate: 转移 ο a transfer chamber adjacent to the manned-lock chamber, the secondary process chamber, such that the substrate is controlled by ??? The primary process chamber and the G described carrier. Between the clothes and the private to the 2nd, as described in the scope of the patent application, the base (4) (4) the moving parts of the door, so that; ΐ Jr knife-level process room and each internal space of the secondary process room / The transfer space of the transfer chamber is connected or separated. 3. The secondary processing chamber in the substrate as described in the scope of claim 2 includes: /, τ, 'supporting the rear surface of the substrate such that the portion and portion of the substrate are exposed In the surrounding environment of the secondary process chamber; a concealer, adjacent to a front surface opposite the back surface of the substrate and covering a central portion of the surface of the crucible, such that the perimeter of the substrate is 2 The sub-exposure is exposed to the surrounding environment; and the bedding generator generates a plasma around the peripheral portion of the substrate. 47 Ο a 200845268 27500pif Insufflation: The substrate processing apparatus according to the third aspect of the present invention, further comprising a kiln injection benefit, the gas injector passing through the shielding unit, the gas injection-substrate Said the previous table _ the central part. The invention relates to the substrate processing apparatus according to Item 3, wherein the generator of the slurry comprises: ', ^ electrode known, arranged along the edge portion of the stage; A two-pole ring is disposed along an edge portion of the job shielding unit; and a power source that applies power to generate the plasma. , ^ If t, please turn the _5 item of the substrate at the county, where the source knows the power to the first electrode ring or the second electrode to produce the plasma. The substrate processing apparatus of claim 5, wherein the substrate portion is spaced apart, and the substrate of the substrate is energized to apply the electric paddle. The utility model as described in claim 3, wherein: the age of the edge of the cutting table or the edge portion of the shielding unit is applied to generate the plasma to The stage. The plasma generator includes the substrate processing apparatus of the third aspect, wherein the peripheral portion is spaced apart by the peripheral portion; and a power source for applying power to the antenna. And the substrate processing apparatus according to claim 1, wherein the package 48 200845268 27500pif includes: a loading state, connected to the loading and locking chamber, and a device 2: the substrate loading the loading Into the room; soil and board treatment body λ Lt _ disambiguation device, including: loading-locking chamber, accommodating a plurality of substrates; :=;ΐ, performing a primary process for manufacturing the semiconductor device; and performing a rhyme process on the rear surface of the substrate; and carrying the person, the room, the chamber, The primary processing chamber and the chamber are such that the filament region is moved by the transfer chamber to the loading chamber, the primary processing chamber, and the secondary processing chamber. The substrate processing apparatus according to claim 5, wherein the manned compartment: the subtraction (four) and the secondary processing chamber are configured to be in contact with the transfer chamber The gate member is such that each of the loading, the primary processing chamber, and the internal processing space of the secondary processing chamber are connected or spaced apart from the transfer space of the transfer chamber. I3. The substrate processing apparatus of claim 11, wherein the secondary processing chamber of A includes: /, solid & single A for fixing the substrate such that the four surfaces of the substrate Exposing in an ambient environment within the secondary process chamber; a supply unit for supplying a process gas to the rear surface of the substrate; and 49 200845268 pen water generation as a starting vehicle at the base handle Two or two (five)^14. The secondary process chamber as described in the scope of the patent application further includes opposing front surfaces that cover the rear surface. 15·If the scope of patent application is ί3 The substrate processing apparatus of claim 3, wherein the plasma generator comprises: a packet pole spaced apart from the rear surface of the substrate, the rear surface of the substrate; and facing the power source for applying Power is applied to the electrodes. 16. The substrate according to claim 15 wherein the first spacing between the electrode and the rear surface of the substrate is less than two of the shielding unit and the front surface of the substrate. The second substrate between the two is as described in claim 14 of the patent application scope. A gas injector is included, and the gas injector passes through the shielding unit to inject an inert gas onto the front surface of the substrate. And a substrate processing apparatus according to the first aspect of the invention, wherein a loader is connected to the load-locking chamber, and the substrate is externally disposed from the substrate processing apparatus Loading the load-locking chamber; and an alignment member coupled to the loader and for aligning the substrate. 19. A substrate processing apparatus for fabricating a semiconductor device, comprising: a load-lock chamber for accommodating a plurality of substrates; a primary process chamber for performing a primary process for fabricating the semiconductor device; a first secondary process chamber for the substrate The peripheral portion performs an etching process 50 200845268 2750〇pif; a second secondary processing chamber performs etching on the rear surface of the substrate; and a transfer chamber adjacent to the load-lock chamber, the primary processing chamber The first secondary processing chamber and the second secondary processing chamber, such that the substrate is first described by the transfer chamber in the load-lock chamber, the primary processing chamber, Transfer between the stage process chamber and the second secondary process chamber. The substrate processing apparatus of claim 19, wherein the load-lock chamber, the primary processing chamber, the first secondary processing chamber, and the second secondary processing chamber include a gate member in contact with the transfer chamber, such that each inner space of the load-lock chamber, the primary processing chamber, the first grading processing chamber, and the second secondary processing chamber It is connected or separated from the transfer space of the transfer room. 21. The substrate processing apparatus according to claim i9, further comprising: a loader connected to the load-locking chamber, and said from the outside of the substrate processing apparatus # The substrate is loaded into the load-locking chamber; and the alignment member is connected to the carrier, and the substrate is fed. 22. A substrate processing apparatus for manufacturing a semiconductor device, comprising: ΛM performing a (four) process on a peripheral portion of the substrate; performing a shoe engraving process on a rear surface of the substrate; and transferring a chamber adjacent to the first process The chamber and the first substrate are transferred between the first process chamber and the (200824268 27500pif) process chamber by the transfer chamber. 23· As stated in the Shenqing Patent Fanyuan, the fourth (4) further includes the processing device of ', (4), and the rotating unit has a rotating body with the main body with the leaf >;& the cymbal of the main body, so that the substrate is simultaneously executed by the side portion of the second engraving module and the second week, and the surrounding portion of the earth plate and the first substrate is exemplified by the process - the second process And the following: a: =, after the second surface of the group, respectively, the fourth substrate of the third substrate = the implementation of the third Qing Cheng and the Ming said the scope of the patent said the scope of the substrate at the county: Description: Multiple: comprising: a first transfer unit, wherein the first substrate *2:=! to the first-peripheral portion_module and the second week portion are recorded; and the second transfer unit The third substrate is placed in the fourth substrate to be transferred to the first-back surface module and the second surface chip engraving module. 26: A substrate processing method for manufacturing a semiconductor device, comprising: Loading a transfer chamber from a load-lock chamber; transferring the substrate to a primary processing chamber to fabricate a primary process for the semiconductor device; and transferring the substrate to the substrate by the transfer chamber a secondary processing chamber to perform a first etching process on a peripheral portion of the substrate; a transfer chamber for unloading the substrate from the first secondary process chamber Ο Ci 200845268 2750〇pif into the load-lock chamber. 27. The substrate processing method according to claim ,%, Further, before the substrate is loaded into the transfer chamber, the substrate is described in the above-mentioned patent scope, and the substrate is unloaded from the secondary processing chamber to the load-lock to the middle. Thereafter, the peripheral portion of the substrate is inspected. 2-9. If the substrate processing method described in claim 26 of the special fiber package is used, the straw transfer processing chamber is used before or after the substrate etching process. For the substrate, the etch process is performed. 30. According to the substrate processing method of claim 26, the primary process described in 1 includes a deposition process, forming a thin film on the substrate. a layer; and a process for partially removing the thin layer on the substrate, forming a pattern structure on the substrate. 31. A substrate processing method for manufacturing a semiconductor device, comprising: loading a substrate from a load-lock chamber Transfer room; a primary processing chamber for performing a primary process for fabricating the semiconductor description on the substrate; performing an etching process on the rear surface of the substrate by moving the transfer chamber to the secondary processing chamber; and borrowing The substrate is loaded from the secondary process into the load-lock chamber by the transfer chamber. #判32. A substrate processing method for manufacturing a semiconductor device, including · 53 200845268 27500pif in the first surname Performing a first engraving process on the peripheral portion of the substrate in the group; transferring the substrate from the first etching module to the second etching mode; and _ in the second etching module A second etching process is performed on a rear surface of the substrate. The substrate processing method of claim 32, wherein the first etching process and the second etching process respectively etch a plurality of the substrates simultaneously. 34. The substrate processing method of item 32, further comprising: first flipping the substrate, and transferring the substrate to the second etched ruthenium such that the rear surface of the substrate is in the second etch The module faces upwards and faces down in the first etching module. L) 54