WO2008108603A1 - Apparatus for etching a substrate - Google Patents

Apparatus for etching a substrate Download PDF

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Publication number
WO2008108603A1
WO2008108603A1 PCT/KR2008/001325 KR2008001325W WO2008108603A1 WO 2008108603 A1 WO2008108603 A1 WO 2008108603A1 KR 2008001325 W KR2008001325 W KR 2008001325W WO 2008108603 A1 WO2008108603 A1 WO 2008108603A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
gas supply
gas
upper electrode
back surface
Prior art date
Application number
PCT/KR2008/001325
Other languages
French (fr)
Inventor
Geun-Ho Kim
Jung-Hee Lee
Seon-Kyu Jeon
Original Assignee
Sosul Co., Ltd.
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sosul Co., Ltd., Lam Research Corporation filed Critical Sosul Co., Ltd.
Publication of WO2008108603A1 publication Critical patent/WO2008108603A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated

Definitions

  • the present invention relates to an apparatus for etching a substrate. More particularly, the present invention relates to an apparatus for etching an unwanted layer formed on a back surface of a semiconductor substrate.
  • impurities or an unwanted layer including impurities may be formed on a back surface of the semiconductor substrate.
  • the impurities or the unwanted layer may function as a contamination source during an etching process for patterning the thin layer after forming the thin layer on the semiconductor substrate.
  • a process of etching the unwanted layer formed on the back surface of the semiconductor substrate may be performed.
  • the unwanted layer formed on the back surface of the semiconductor substrate may be removed by a wet etching process or a chemical mechanical polishing (CMP) process.
  • CMP chemical mechanical polishing
  • An object of the present invention is to provide an apparatus for etching a substrate capable of removing an unwanted layer formed on a back surface of a semiconductor substrate.
  • An apparatus for etching a substrate may include a chamber providing a space to process the substrate, a support member supporting an edge portion of a back surface of the substrate, and a gas supply comprising a body supplying an etching gas onto the back surface of the substrate through a plurality of holes and a gas supply conduit connected with the holes.
  • the support member may space the substrate apart from the gas supply and may partially support the edge portion of the back surface of the substrate.
  • the support member may be vertically movable to adjust a distance between the substrate and the gas supply.
  • the body may include an insulating material
  • the gas supply may include a conductive pattern to which high frequency energy is applied to generate a plasma from the etching gas.
  • the apparatus may further include an upper electrode disposed opposite to the gas supply and electrically grounded.
  • the body may include a conductive material, and high frequency energy may be applied to the body to generate a plasma from the etching gas.
  • the substrate may be supported by the support member between the upper electrode and the gas supply.
  • the apparatus may further include an insulating member disposed between the upper electrode and the substrate to prevent a plasma from being generated in a space between the upper electrode and the substrate.
  • an inert gas may be supplied into the space between the upper electrode and the substrate through the insulating member.
  • An apparatus for etching a substrate may include a chamber providing a space to process the substrate, a first support member supporting a first portion of a back surface of the substrate, a second support member supporting a second portion of the back surface of the substrate, and a gas supply including a body disposed under the substrate in the chamber and having a plurality of holes to supply an etching gas onto the back surface of the substrate and a gas supply conduit connected with the holes.
  • An apparatus for etching a substrate provides a space to process the substrate, a gas supply disposed under the substrate in the chamber to supply an etching gas toward a back surface of the substrate, high frequency energy being applied to the gas supply to generate a plasma from the etching gas, a lower electrode disposed on the gas supply and having a plurality of holes to uniformly supply the etching gas, and an upper electrode disposed over the substrate and electrically grounded.
  • the apparatus may further include a support member disposed between the upper electrode and the lower electrode to support an edge portion of the back surface of the substrate.
  • the support member may be vertically movable to adjust a distance between the substrate and the lower electrode.
  • the lower electrode may have a mesh structure.
  • the apparatus may further include a second gas supply supplying an inert gas into a space between the upper electrode and the substrate through the upper electrode.
  • the upper electrode may include a body rotatably disposed in the chamber and a holder connected to a lower portion of the body to face the substrate.
  • the inert gas may be supplied into the space between the upper electrode and the substrate through the body and the holder and may flow to an edge portion of the substrate along a front surface of the substrate.
  • the velocity of the inert gas may be increased by rotation of the body and the holder, and the substrate may float due to lift generated by the increased velocity of the inert gas and may be held under the holder.
  • an edge portion of the holder may downwardly extend to prevent the substrate from moving laterally, and the substrate may be held inside the edge portion of the holder.
  • an unwanted layer formed on a back surface of a substrate may be removed by a plasma which is generated from a process gas.
  • a layer or patterns formed on a front surface of the substrate may be prevented from being contaminated by the unwanted layer.
  • FIG. 1 is a cross-sectional view illustrating a plasma etching apparatus according to an example embodiment of the present invention
  • FIG. 2 is a cross-sectional view illustrating a plasma etching apparatus according to another example embodiment of the present invention.
  • FIG. 3 is a cross-sectional view illustrating a plasma etching apparatus according to still another example embodiment of the present invention.
  • spatially relative terms such as “lower,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
  • example embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing.
  • the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
  • FIG. 1 is a cross-sectional view illustrating a plasma etching apparatus according to an example embodiment of the present invention.
  • an etching apparatus 100 may include a chamber 110, a gas supply 120 and a support member 150.
  • the chamber 110 may receive a semiconductor substrate W and may provide a space to process the semiconductor substrate W.
  • the gas supply 120 may be disposed in the chamber 110.
  • the gas supply 120 may be disposed in a lower portion of the chamber 110.
  • High frequency energy may be applied to the gas supply 120 to generate a plasma from a process gas or an etching gas.
  • the process gas may be supplied to between the semiconductor substrate W and the gas supply 120 through the gas supply 120 and may be excited by the high frequency energy.
  • the gas supply 120 may include a body 121 and a gas supply conduit 123 to supply the process gas toward the semiconductor substrate W.
  • the body 121 may have a buffer space for receiving the process gas and a plurality of holes 125 for supplying the process gas from the buffer space into the chamber 110.
  • the holes 125 may be formed through an upper panel of the body 121 and the process gas may be upwardly supplied through the holes 125.
  • the gas supply 120 may include a conductive material such that the high frequency energy may be applied to the gas supply 120.
  • the gas supply 120 may include an insulating material.
  • a conductive pattern may be formed on surfaces which define the buffer space of the gas supply 120 such that the high frequency energy may be applied to the conductive pattern.
  • the conductive pattern may be formed on inner surfaces or a lower surface of the body 121.
  • the gas supply 120 of the etching apparatus 100 may further include a gas tank (not shown) for storing the process gas, an additional gas supply conduit 171 extending from the gas tank and a flow control valve 173 disposed between the gas supply conduit 123 and the additional gas supply conduit 171.
  • An upper electrode 140 may be disposed opposite to the gas supply 120 in the process chamber 110. Particularly, the upper electrode 140 may be disposed in an upper portion of the process chamber 110 and the semiconductor substrate W may be disposed between the gas supply 120 and the upper electrode 140. When the high frequency energy is applied to the gas supply 120, the upper electrode 140 may be electrically grounded. Thus, the process gas supplied to between the semiconductor substrate W and the gas supply 120 may be formed in a plasma state.
  • the support member 150 may be disposed between the gas supply 120 and the upper electrode 140 to support an edge portion of a back surface of the semiconductor substrate W. That is, the back surface of the semiconductor substrate W may be disposed to face the gas supply 120.
  • the support member 150 may be mounted on sidewalls of the chamber 110 and may be extended toward a central axis of the chamber 110. Further, though not shown in the figures, the support member 150 may be vertically movable to adjust a distance between the semiconductor substrate W and the gas supply 120.
  • the support member 150 may have a ring shape to support the edge portion of the semiconductor substrate W.
  • the semiconductor substrate W may be carried in the chamber 110 and may be carried out the chamber 110 by a transfer robot.
  • the support member 150 may have an open ring shape or a C-shape to prevent interference with a robot arm of the transfer robot.
  • the etching apparatus 100 may include a first support member and a second support member in place of the support member 150.
  • the semiconductor substrate W may be supported by one of the first and second support members. That is, the first or second support member may partially support the edge portion of the back surface of the semiconductor substrate W.
  • the first support member may support first edge portions of the back surface of the semiconductor substrate W
  • the second support member may support second edge portions of the back surface of the semiconductor substrate W.
  • the etching apparatus 100 may etch a portion of a layer on the back surface of the semiconductor substrate W except for the first edge portions while the first support member supports the first edge portions, and may etch a portion of the layer on the back surface of the semiconductor substrate W except for the second edge portions while the second support member supports the second edge portions.
  • the etching apparatus 100 may sufficiently etch the layer on the back surface of the semiconductor substrate W, and thus may sufficiently remove impurities or an unwanted layer from the back surface of the semiconductor substrate W.
  • the gas supply 120 of the etching apparatus 100 in accordance with another example embodiment of the present invention, may further include a mesh type electrode plate (not shown) to uniformly supply the process gas onto the back surface of the semiconductor substrate W.
  • the process gas may be uniformly supplied onto the back surface of the semiconductor substrate W through the holes 125 of the gas supply 120 and the electrode plate. Further, high frequency energy may be applied to the electrode plate.
  • the etching apparatus 100 may further include an elevating member (not shown) to vertically move the semiconductor substrate W so as to load the semiconductor substrate W on the support member 150 or to unload the semiconductor substrate
  • the etching apparatus 100 may further include an insulating member (not shown) disposed between the upper electrode 140 and the semiconductor substrate W to prevent a plasma from being generated in a space between the upper electrode
  • the plasma may be prevented from being generated in the space between the upper electrode 140 and the semiconductor substrate W by the insulating member, a layer or pattern formed on a front surface of the semiconductor substrate W may be prevented from being damaged while performing the etching process to remove the unwanted layer on the back surface of the semiconductor substrate W.
  • the insulating member may have a plurality of holes, and an inert gas, such as nitrogen, argon, and the like, may be supplied through the holes of the insulating member. Thus, the process gas or the plasma may be prevented from being introduced into the space between the upper electrode 140 and the semiconductor substrate W.
  • the unwanted layer formed on the back surface of the semiconductor substrate W may be removed by the plasma generated between the gas supply 120 and the back surface of the semiconductor substrate W.
  • FIG. 2 is a cross-sectional view illustrating an etching apparatus according to another example embodiment of the present invention.
  • an etching apparatus 200 may include a chamber 210, a gas supply 220, a lower electrode 230, an upper electrode 240 and a support member.
  • the chamber 210 may receive a semiconductor substrate W and may provide a space to process the semiconductor substrate W.
  • the semiconductor substrate W may be disposed between the lower electrode 230 and the upper electrode.
  • the gas supply 220 may be disposed in the chamber 210.
  • the gas supply 220 may be disposed in a lower portion of the chamber 210.
  • the gas supply 220 may supply a process gas, for example, an etching gas, into the chamber 210 to remove an unwanted layer, which is formed on a back surface of the semiconductor substrate W, and high frequency energy may be applied to the gas supply 220 to generate a plasma from the process gas.
  • a process gas for example, an etching gas
  • the gas supply 220 may include a body 221, which defines a buffer space 225 to receive the process gas for a time, and a gas supply conduit 223 connected to the body 221.
  • the process gas may be supplied from the buffer space 225 into the process chamber 210 through the lower electrode 230.
  • the gas supply 220 may further include a gas tank (not shown) receiving the process gas, an additional gas supply conduit 271 extending from the gas tank and a flow control valve 273 disposed between the gas supply conduit 223 and the additional gas supply conduit 271.
  • the lower electrode 230 may be disposed on the gas supply 220. Particularly, the lower electrode 230 may be mounted on an upper portion of the gas supply 220 and may define the buffer space 225 together with the body 221.
  • the lower electrode 230 may have a disk shape corresponding to the semiconductor substrate W.
  • the lower electrode 230 may have a plurality of holes 235 to supply the process gas toward the back surface of the semiconductor substrate W.
  • the lower electrode 230 may have a mesh structure through which the plurality of holes 235 is formed. The process gas may be supplied toward the semiconductor substrate W through the holes 235 of the lower electrode 230 having the mesh structure.
  • the holes 235 of the lower electrode 230 may have a diameter greater than about 0.1 mm, and a diameter of the lower electrode 230 may be about 95% of a diameter of the semiconductor substrate W.
  • the lower electrode 230 may have a diameter of about 285 mm.
  • the lower electrode 230 may have a thickness of about 0.1 to about 300 mm.
  • the lower electrode 230 may include a conductive material. Particularly,
  • Examples of the conductive material that may be used for the lower electrode 230 may include aluminum, copper, and the like.
  • high frequency energy may be applied to the lower electrode 230 to excite the process gas.
  • the high frequency energy may be simultaneously applied to the gas supply 220 and the lower electrode 230, and may be applied only to the gas supply 220 as well.
  • the lower electrode 230 may be electrically grounded.
  • the upper electrode 240 may be disposed in an upper portion of the chamber 210.
  • the upper electrode 240 may be disposed to face the gas supply 220.
  • the upper electrode 240 may be electrically grounded.
  • the process gas supplied into a space between the semiconductor substrate W and the lower electrode 230 may be excited by the high frequency energy to thereby generate the plasma.
  • the support member 250 may support edge portions of the back surface of the semiconductor substrate W and may horizontally extend from sidewalls of the chamber 210 toward a central axis of the chamber 210.
  • the support member 250 may be vertically movable to adjust a distance between the semiconductor substrate W and the lower electrode 230.
  • the etching apparatus 200 may etch the unwanted layer on the back surface of the semiconductor substrate W using the process gas supplied from the gas supply 220 through the holes 235 of the lower electrode 230.
  • the etching process on the unwanted layer may be performed under a pressure approximately equal to or lower than atmospheric pressure.
  • FIG. 3 is a cross-sectional view illustrating an etching apparatus according still another example embodiment of the present invention.
  • an etching apparatus 300 may include a chamber 310, a gas supply 320, a lower electrode 330 and an upper electrode 340.
  • the chamber 310 the gas supply 320 and the lower electrode 330 may be omitted because these elements are similar to the chamber 210, the gas supply 220 and the lower electrode 230 of the etching apparatus 200 already described with reference to FIG. 2.
  • the upper electrode 340 may include a body 341 extending downwardly through an upper portion of the chamber 310 and rotatably disposed in the chamber 310, a holder connected to a lower portion of the body 341 to face the lower electrode 330 and a second gas supply 345 supplying an inert gas, such as nitrogen, argon, and the like, onto a front surface of the semiconductor substrate W through the body 341.
  • a driving section may be connected with the upper electrode 340 to rotate the upper electrode 340.
  • the upper electrode 340 may be movably disposed in a vertical direction. The driving section may move the upper electrode 340 in the vertical direction to adjust a distance between the semiconductor substrate W and the lower electrode 330.
  • the upper electrode 340 may be rotated by the driving section while the inert gas is supplied into a space between the semiconductor substrate W and the upper electrode 340.
  • the inert gas may flow to an edge portion of the semiconductor substrate W along the front surface of the semiconductor substrate W, and the velocity of the inert gas may be increased by the rotation of the upper electrode 340.
  • a process gas may be supplied toward a back surface of the semiconductor substrate W through holes 335 of the lower electrode 330.
  • a differential pressure between pressures applied to the front and back surfaces of the semiconductor substrate W may occur due to the increased velocity of the inert gas, and thus lift may occur due to the differential pressure.
  • p is the pressure
  • p is the density
  • g is the gravitational acceleration
  • h is the elevation
  • v is the velocity
  • the semiconductor substrate W may float due to pressure applied to the back surface of the semiconductor substrate W by the process gas and the lift generated by the increased velocity of the inert gas. That is, the holder 343 may hold the semiconductor substrate W without making contact with the semiconductor substrate W. Meanwhile, the distance between the semiconductor substrate W and the lower electrode 330 may be fixed by the driving section, and an edge portion 344 of the holder 343 may downwardly extend to prevent the semiconductor substrate W from moving laterally. Thus, the semiconductor substrate W may be held inside the edge portion 344 of the holder 343 by the pressure applied to the back surface of the semiconductor substrate W and the lift.
  • the gas supply 320 includes a body 321 defining a buffer space 325, a gas supply conduit 323 supplying the process gas into the buffer space 325, an additional gas supply conduit 371 extending from a gas tank in which the process gas is stored, and a flow control valve 373 disposed between the gas supply conduit 323 and the additional gas supply conduit 371.
  • high frequency energy may be applied to the gas supply 320 to generate a plasma from the process gas supplied to under the semiconductor substrate W, and the upper electrode 340 may be electrically grounded.
  • the process gas may be prevented from being introduced to between the semiconductor substrate W and the holder 343 by the inert gas.
  • a layer or patterns on the front surface of the semiconductor substrate W may be prevented from being damaged by the process gas.
  • the unwanted layer on the back surface of the semiconductor substrate W may be removed before and/or after performing a cleaning or etching process on an edge portion of the semiconductor substrate W.
  • an unwanted layer including impurities formed on a back surface of a semiconductor substrate may be removed by a plasma.
  • the plasma may be generated from a process gas supplied through a gas supply or a lower electrode which may be disposed under the semiconductor substrate, and the plasma may be prevented from being introduced onto a front surface of the semiconductor substrate by supplying an inert gas onto the front surface of the semiconductor substrate.
  • a layer or patterns on the front surface of the semiconductor substrate may be prevented from being contaminated by the impurities.

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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

An apparatus for etching an unwanted layer formed on a back surface of a substrate includes a chamber providing a space to process the substrate, a support member supporting an edge portion of a back surface of the substrate, and a gas supply including a body supplying an etching gas onto the back surface of the substrate through a plurality of holes and a gas supply conduit connected with the holes. High frequency energy is applied to the gas supply to generate a plasma from the etching gas, and the unwanted layer may be removed by the plasma.

Description

APPARATUS FOR ETCHING A SUBSTRATE
Technical Field
The present invention relates to an apparatus for etching a substrate. More particularly, the present invention relates to an apparatus for etching an unwanted layer formed on a back surface of a semiconductor substrate.
Background Art
Generally, when a thin layer is formed on a semiconductor substrate in manufacturing semiconductor devices, impurities or an unwanted layer including impurities may be formed on a back surface of the semiconductor substrate.
The impurities or the unwanted layer may function as a contamination source during an etching process for patterning the thin layer after forming the thin layer on the semiconductor substrate. Thus, after forming the thin layer on the semiconductor substrate, a process of etching the unwanted layer formed on the back surface of the semiconductor substrate may be performed.
The unwanted layer formed on the back surface of the semiconductor substrate may be removed by a wet etching process or a chemical mechanical polishing (CMP) process. When the wet etching process is performed, the semiconductor substrate may be recontaminated by an etching solution. Further, when the CMP process is performed, the time required to remove the unwanted layer may be increased.
Disclosure of the Invention Technical Problem
An object of the present invention is to provide an apparatus for etching a substrate capable of removing an unwanted layer formed on a back surface of a semiconductor substrate. Technical Solution
An apparatus for etching a substrate, according to an aspect of the present invention, may include a chamber providing a space to process the substrate, a support member supporting an edge portion of a back surface of the substrate, and a gas supply comprising a body supplying an etching gas onto the back surface of the substrate through a plurality of holes and a gas supply conduit connected with the holes.
According to some example embodiments of the present invention, the support member may space the substrate apart from the gas supply and may partially support the edge portion of the back surface of the substrate.
According to some example embodiments of the present invention, the support member may be vertically movable to adjust a distance between the substrate and the gas supply.
According to some example embodiments of the present invention, the body may include an insulating material, and the gas supply may include a conductive pattern to which high frequency energy is applied to generate a plasma from the etching gas.
According to some example embodiments of the present invention, the apparatus may further include an upper electrode disposed opposite to the gas supply and electrically grounded. The body may include a conductive material, and high frequency energy may be applied to the body to generate a plasma from the etching gas. The substrate may be supported by the support member between the upper electrode and the gas supply.
According to some example embodiments of the present invention, the apparatus may further include an insulating member disposed between the upper electrode and the substrate to prevent a plasma from being generated in a space between the upper electrode and the substrate.
According to some example embodiments of the present invention, an inert gas may be supplied into the space between the upper electrode and the substrate through the insulating member.
An apparatus for etching a substrate, according to another aspect of the present invention, may include a chamber providing a space to process the substrate, a first support member supporting a first portion of a back surface of the substrate, a second support member supporting a second portion of the back surface of the substrate, and a gas supply including a body disposed under the substrate in the chamber and having a plurality of holes to supply an etching gas onto the back surface of the substrate and a gas supply conduit connected with the holes. An apparatus for etching a substrate, according to still another aspect of the present invention, a chamber providing a space to process the substrate, a gas supply disposed under the substrate in the chamber to supply an etching gas toward a back surface of the substrate, high frequency energy being applied to the gas supply to generate a plasma from the etching gas, a lower electrode disposed on the gas supply and having a plurality of holes to uniformly supply the etching gas, and an upper electrode disposed over the substrate and electrically grounded.
According to some example embodiments of the present invention, the apparatus may further include a support member disposed between the upper electrode and the lower electrode to support an edge portion of the back surface of the substrate.
According to some example embodiments of the present invention, the support member may be vertically movable to adjust a distance between the substrate and the lower electrode. According to some example embodiments of the present invention, the lower electrode may have a mesh structure.
According to some example embodiments of the present invention, the apparatus may further include a second gas supply supplying an inert gas into a space between the upper electrode and the substrate through the upper electrode. According to some example embodiments of the present invention, the upper electrode may include a body rotatably disposed in the chamber and a holder connected to a lower portion of the body to face the substrate. The inert gas may be supplied into the space between the upper electrode and the substrate through the body and the holder and may flow to an edge portion of the substrate along a front surface of the substrate. The velocity of the inert gas may be increased by rotation of the body and the holder, and the substrate may float due to lift generated by the increased velocity of the inert gas and may be held under the holder. According to some example embodiments of the present invention, an edge portion of the holder may downwardly extend to prevent the substrate from moving laterally, and the substrate may be held inside the edge portion of the holder. Advantageous Effects In accordance with the example embodiments of the present invention as described above, an unwanted layer formed on a back surface of a substrate may be removed by a plasma which is generated from a process gas. Thus, a layer or patterns formed on a front surface of the substrate may be prevented from being contaminated by the unwanted layer.
Brief Description of the Drawings
The above and other advantages of the present invention will become more apparent by describing example embodiments thereof in detail with reference to the accompanying drawings, in which: FIG. 1 is a cross-sectional view illustrating a plasma etching apparatus according to an example embodiment of the present invention;
FIG. 2 is a cross-sectional view illustrating a plasma etching apparatus according to another example embodiment of the present invention; and
FIG. 3 is a cross-sectional view illustrating a plasma etching apparatus according to still another example embodiment of the present invention.
Best Mode for Carrying Out the Invention
The present invention is described more fully hereinafter with reference to the accompanying drawings, in which example embodiments of the present invention are shown. The present invention may, however, be embodied in many different forms and should not be construed as limited to the example embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.
It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present. Like reference numerals refer to like elements throughout. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "lower," "upper" and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the example term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present invention. As used herein, the singular forms "a," "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Example embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. The regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
FIG. 1 is a cross-sectional view illustrating a plasma etching apparatus according to an example embodiment of the present invention.
Referring to FIG. 1, an etching apparatus 100, according to an example embodiment of the present invention, may include a chamber 110, a gas supply 120 and a support member 150.
The chamber 110 may receive a semiconductor substrate W and may provide a space to process the semiconductor substrate W.
The gas supply 120 may be disposed in the chamber 110. For example, the gas supply 120 may be disposed in a lower portion of the chamber 110. High frequency energy may be applied to the gas supply 120 to generate a plasma from a process gas or an etching gas. The process gas may be supplied to between the semiconductor substrate W and the gas supply 120 through the gas supply 120 and may be excited by the high frequency energy.
The gas supply 120 may include a body 121 and a gas supply conduit 123 to supply the process gas toward the semiconductor substrate W.
The body 121 may have a buffer space for receiving the process gas and a plurality of holes 125 for supplying the process gas from the buffer space into the chamber 110. Particularly, the holes 125 may be formed through an upper panel of the body 121 and the process gas may be upwardly supplied through the holes 125.
In accordance with an example embodiment of the present invention, the gas supply 120 may include a conductive material such that the high frequency energy may be applied to the gas supply 120. In accordance with another example embodiment of present invention, the gas supply 120 may include an insulating material. In this case, a conductive pattern may be formed on surfaces which define the buffer space of the gas supply 120 such that the high frequency energy may be applied to the conductive pattern. Alternatively, the conductive pattern may be formed on inner surfaces or a lower surface of the body 121.
In accordance with an example embodiment of the present invention, the gas supply 120 of the etching apparatus 100 may further include a gas tank (not shown) for storing the process gas, an additional gas supply conduit 171 extending from the gas tank and a flow control valve 173 disposed between the gas supply conduit 123 and the additional gas supply conduit 171.
An upper electrode 140 may be disposed opposite to the gas supply 120 in the process chamber 110. Particularly, the upper electrode 140 may be disposed in an upper portion of the process chamber 110 and the semiconductor substrate W may be disposed between the gas supply 120 and the upper electrode 140. When the high frequency energy is applied to the gas supply 120, the upper electrode 140 may be electrically grounded. Thus, the process gas supplied to between the semiconductor substrate W and the gas supply 120 may be formed in a plasma state.
The support member 150 may be disposed between the gas supply 120 and the upper electrode 140 to support an edge portion of a back surface of the semiconductor substrate W. That is, the back surface of the semiconductor substrate W may be disposed to face the gas supply 120. The support member 150 may be mounted on sidewalls of the chamber 110 and may be extended toward a central axis of the chamber 110. Further, though not shown in the figures, the support member 150 may be vertically movable to adjust a distance between the semiconductor substrate W and the gas supply 120. The support member 150 may have a ring shape to support the edge portion of the semiconductor substrate W. Meanwhile, the semiconductor substrate W may be carried in the chamber 110 and may be carried out the chamber 110 by a transfer robot. Particularly, the support member 150 may have an open ring shape or a C-shape to prevent interference with a robot arm of the transfer robot.
In accordance with another example embodiment of the present invention, the etching apparatus 100 may include a first support member and a second support member in place of the support member 150. Particularly, the semiconductor substrate W may be supported by one of the first and second support members. That is, the first or second support member may partially support the edge portion of the back surface of the semiconductor substrate W. For example, the first support member may support first edge portions of the back surface of the semiconductor substrate W, and the second support member may support second edge portions of the back surface of the semiconductor substrate W. In this case, the etching apparatus 100 may etch a portion of a layer on the back surface of the semiconductor substrate W except for the first edge portions while the first support member supports the first edge portions, and may etch a portion of the layer on the back surface of the semiconductor substrate W except for the second edge portions while the second support member supports the second edge portions. Thus, the etching apparatus 100 may sufficiently etch the layer on the back surface of the semiconductor substrate W, and thus may sufficiently remove impurities or an unwanted layer from the back surface of the semiconductor substrate W. Meanwhile, the gas supply 120 of the etching apparatus 100, in accordance with another example embodiment of the present invention, may further include a mesh type electrode plate (not shown) to uniformly supply the process gas onto the back surface of the semiconductor substrate W. The process gas may be uniformly supplied onto the back surface of the semiconductor substrate W through the holes 125 of the gas supply 120 and the electrode plate. Further, high frequency energy may be applied to the electrode plate.
In accordance with an example embodiment of the present invention, the etching apparatus 100 may further include an elevating member (not shown) to vertically move the semiconductor substrate W so as to load the semiconductor substrate W on the support member 150 or to unload the semiconductor substrate
W from the support member 150.
In accordance with an example embodiment of the present invention, the etching apparatus 100 may further include an insulating member (not shown) disposed between the upper electrode 140 and the semiconductor substrate W to prevent a plasma from being generated in a space between the upper electrode
140 and the semiconductor substrate W.
Because the plasma may be prevented from being generated in the space between the upper electrode 140 and the semiconductor substrate W by the insulating member, a layer or pattern formed on a front surface of the semiconductor substrate W may be prevented from being damaged while performing the etching process to remove the unwanted layer on the back surface of the semiconductor substrate W. Further, the insulating member may have a plurality of holes, and an inert gas, such as nitrogen, argon, and the like, may be supplied through the holes of the insulating member. Thus, the process gas or the plasma may be prevented from being introduced into the space between the upper electrode 140 and the semiconductor substrate W.
As described above, the unwanted layer formed on the back surface of the semiconductor substrate W may be removed by the plasma generated between the gas supply 120 and the back surface of the semiconductor substrate W.
FIG. 2 is a cross-sectional view illustrating an etching apparatus according to another example embodiment of the present invention.
Referring to FIG. 2, an etching apparatus 200, according to another example embodiment of the present invention, may include a chamber 210, a gas supply 220, a lower electrode 230, an upper electrode 240 and a support member.
The chamber 210 may receive a semiconductor substrate W and may provide a space to process the semiconductor substrate W. The semiconductor substrate W may be disposed between the lower electrode 230 and the upper electrode.
The gas supply 220 may be disposed in the chamber 210. For example, the gas supply 220 may be disposed in a lower portion of the chamber 210. Though not shown in the figures, the gas supply 220 may supply a process gas, for example, an etching gas, into the chamber 210 to remove an unwanted layer, which is formed on a back surface of the semiconductor substrate W, and high frequency energy may be applied to the gas supply 220 to generate a plasma from the process gas.
The gas supply 220 may include a body 221, which defines a buffer space 225 to receive the process gas for a time, and a gas supply conduit 223 connected to the body 221. The process gas may be supplied from the buffer space 225 into the process chamber 210 through the lower electrode 230.
In accordance with an example embodiment of the present invention, the gas supply 220 may further include a gas tank (not shown) receiving the process gas, an additional gas supply conduit 271 extending from the gas tank and a flow control valve 273 disposed between the gas supply conduit 223 and the additional gas supply conduit 271.
The lower electrode 230 may be disposed on the gas supply 220. Particularly, the lower electrode 230 may be mounted on an upper portion of the gas supply 220 and may define the buffer space 225 together with the body 221. The lower electrode 230 may have a disk shape corresponding to the semiconductor substrate W. Further, the lower electrode 230 may have a plurality of holes 235 to supply the process gas toward the back surface of the semiconductor substrate W. For example, the lower electrode 230 may have a mesh structure through which the plurality of holes 235 is formed. The process gas may be supplied toward the semiconductor substrate W through the holes 235 of the lower electrode 230 having the mesh structure.
The holes 235 of the lower electrode 230 may have a diameter greater than about 0.1 mm, and a diameter of the lower electrode 230 may be about 95% of a diameter of the semiconductor substrate W. For example, when the semiconductor substrate W has a diameter of about 300 mm, the lower electrode 230 may have a diameter of about 285 mm. Further, the lower electrode 230 may have a thickness of about 0.1 to about 300 mm. The lower electrode 230 may include a conductive material. Particularly,
Examples of the conductive material that may be used for the lower electrode 230 may include aluminum, copper, and the like. Though not shown in the figures, high frequency energy may be applied to the lower electrode 230 to excite the process gas. For example, the high frequency energy may be simultaneously applied to the gas supply 220 and the lower electrode 230, and may be applied only to the gas supply 220 as well. When the high frequency energy is applied only to the gas supply 220, the lower electrode 230 may be electrically grounded.
The upper electrode 240 may be disposed in an upper portion of the chamber 210. For example, the upper electrode 240 may be disposed to face the gas supply 220. When the high frequency energy is applied to the gas supply 220 and/or the lower electrode 230, the upper electrode 240 may be electrically grounded. The process gas supplied into a space between the semiconductor substrate W and the lower electrode 230 may be excited by the high frequency energy to thereby generate the plasma.
The support member 250 may support edge portions of the back surface of the semiconductor substrate W and may horizontally extend from sidewalls of the chamber 210 toward a central axis of the chamber 210. The support member 250 may be vertically movable to adjust a distance between the semiconductor substrate W and the lower electrode 230.
The etching apparatus 200, as described above, may etch the unwanted layer on the back surface of the semiconductor substrate W using the process gas supplied from the gas supply 220 through the holes 235 of the lower electrode 230. The etching process on the unwanted layer may be performed under a pressure approximately equal to or lower than atmospheric pressure.
FIG. 3 is a cross-sectional view illustrating an etching apparatus according still another example embodiment of the present invention.
Referring to FIG. 3, an etching apparatus 300, according to still another example embodiment of the present invention, may include a chamber 310, a gas supply 320, a lower electrode 330 and an upper electrode 340.
Further detailed descriptions for the chamber 310, the gas supply 320 and the lower electrode 330 may be omitted because these elements are similar to the chamber 210, the gas supply 220 and the lower electrode 230 of the etching apparatus 200 already described with reference to FIG. 2.
The upper electrode 340 may include a body 341 extending downwardly through an upper portion of the chamber 310 and rotatably disposed in the chamber 310, a holder connected to a lower portion of the body 341 to face the lower electrode 330 and a second gas supply 345 supplying an inert gas, such as nitrogen, argon, and the like, onto a front surface of the semiconductor substrate W through the body 341. Meanwhile, though not shown in the figures, a driving section may be connected with the upper electrode 340 to rotate the upper electrode 340. Further, the upper electrode 340 may be movably disposed in a vertical direction. The driving section may move the upper electrode 340 in the vertical direction to adjust a distance between the semiconductor substrate W and the lower electrode 330.
The upper electrode 340 may be rotated by the driving section while the inert gas is supplied into a space between the semiconductor substrate W and the upper electrode 340. The inert gas may flow to an edge portion of the semiconductor substrate W along the front surface of the semiconductor substrate W, and the velocity of the inert gas may be increased by the rotation of the upper electrode 340. Further, a process gas may be supplied toward a back surface of the semiconductor substrate W through holes 335 of the lower electrode 330. Meanwhile, a differential pressure between pressures applied to the front and back surfaces of the semiconductor substrate W may occur due to the increased velocity of the inert gas, and thus lift may occur due to the differential pressure. The lift may be described using Bernoulli's equation which is well known as the following Formula 1. [Formula 1] p + pgh + (l/2)pv2 = constant
Where p is the pressure; p is the density; g is the gravitational acceleration; h is the elevation; and v is the velocity.
As a result, the semiconductor substrate W may float due to pressure applied to the back surface of the semiconductor substrate W by the process gas and the lift generated by the increased velocity of the inert gas. That is, the holder 343 may hold the semiconductor substrate W without making contact with the semiconductor substrate W. Meanwhile, the distance between the semiconductor substrate W and the lower electrode 330 may be fixed by the driving section, and an edge portion 344 of the holder 343 may downwardly extend to prevent the semiconductor substrate W from moving laterally. Thus, the semiconductor substrate W may be held inside the edge portion 344 of the holder 343 by the pressure applied to the back surface of the semiconductor substrate W and the lift. The gas supply 320 includes a body 321 defining a buffer space 325, a gas supply conduit 323 supplying the process gas into the buffer space 325, an additional gas supply conduit 371 extending from a gas tank in which the process gas is stored, and a flow control valve 373 disposed between the gas supply conduit 323 and the additional gas supply conduit 371. Further, though not shown in the figures, high frequency energy may be applied to the gas supply 320 to generate a plasma from the process gas supplied to under the semiconductor substrate W, and the upper electrode 340 may be electrically grounded. Meanwhile, the process gas may be prevented from being introduced to between the semiconductor substrate W and the holder 343 by the inert gas. Thus, a layer or patterns on the front surface of the semiconductor substrate W may be prevented from being damaged by the process gas.
The unwanted layer on the back surface of the semiconductor substrate W may be removed before and/or after performing a cleaning or etching process on an edge portion of the semiconductor substrate W.
Industrial Applicability
According to the example embodiments of the present invention as described above, an unwanted layer including impurities formed on a back surface of a semiconductor substrate may be removed by a plasma. Particularly, the plasma may be generated from a process gas supplied through a gas supply or a lower electrode which may be disposed under the semiconductor substrate, and the plasma may be prevented from being introduced onto a front surface of the semiconductor substrate by supplying an inert gas onto the front surface of the semiconductor substrate.
As a result, a layer or patterns on the front surface of the semiconductor substrate may be prevented from being contaminated by the impurities.
Although the example embodiments of the present invention have been described, it is understood that the present invention should not be limited to these example embodiments but various changes and modifications can be made by those skilled in the art within the spirit and scope of the present invention as hereinafter claimed.

Claims

1. An apparatus for etching a substrate comprising: a chamber providing a space to process the substrate; a support member supporting an edge portion of a back surface of the substrate; and a gas supply comprising a body supplying an etching gas onto the back surface of the substrate through a plurality of holes and a gas supply conduit connected with the holes.
2. The apparatus of claim 1, wherein the support member spaces the substrate apart from the gas supply and partially supports the edge portion of the back surface of the substrate.
3. The apparatus of claim 1, wherein the support member is vertically movable to adjust a distance between the substrate and the gas supply.
4. The apparatus of claim 1, wherein the body comprises an insulating material, and the gas supply comprises a conductive pattern to which high frequency energy is applied to generate a plasma from the etching gas.
5. The apparatus of claim 1, further comprising an upper electrode disposed opposite to the gas supply and electrically grounded, and wherein the body comprises a conductive material; high frequency energy is applied to the body to generate a plasma from the etching gas, and the substrate is supported by the support member between the upper electrode and the gas supply.
6. The apparatus of claim 5, further comprising an insulating member disposed between the upper electrode and the substrate to prevent a plasma from being generated in a space between the upper electrode and the substrate.
7. The apparatus of claim 6, wherein an inert gas is supplied into the space between the upper electrode and the substrate through the insulating member.
8. An apparatus for etching a substrate comprising: a chamber providing a space to process the substrate; a first support member supporting a first portion of a back surface of the substrate; a second support member supporting a second portion of the back surface of the substrate; and a gas supply comprising a body disposed under the substrate in the chamber and having a plurality of holes to supply an etching gas onto the back surface of the substrate and a gas supply conduit connected with the holes.
9. An apparatus for etching a substrate comprising: a chamber providing a space to process the substrate; a gas supply disposed under the substrate in the chamber to supply an etching gas toward a back surface of the substrate, high frequency energy being applied to the gas supply to generate a plasma from the etching gas; a lower electrode disposed on the gas supply and having a plurality of holes to uniformly supply the etching gas; and an upper electrode disposed over the substrate and electrically grounded.
10. The apparatus of claim 9, further comprising a support member disposed between the upper electrode and the lower electrode to support an edge portion of the back surface of the substrate.
11. The apparatus of claim 10, wherein the support member is vertically movable to adjust a distance between the substrate and the lower electrode.
12. The apparatus of claim 9, wherein the lower electrode has a mesh structure.
13. The apparatus of claim 9, further comprising a second gas supply supplying an inert gas into a space between the upper electrode and the substrate through the upper electrode.
14. The apparatus of claim 13, wherein the upper electrode comprises a body rotatably disposed in the chamber and a holder connected to a lower portion of the body to face the substrate, the inert gas is supplied into the space between the upper electrode and the substrate through the body and the holder and flows to an edge portion of the substrate along a front surface of the substrate, a velocity of the inert gas is increased by rotation of the body and the holder, and the substrate floats due to lift generated by the increased velocity of the inert gas and is held under the holder.
15. The apparatus of claim 14, wherein an edge portion of the holder downwardly extends to prevent the substrate from moving laterally, and the substrate is held inside the edge portion of the holder.
PCT/KR2008/001325 2007-03-08 2008-03-07 Apparatus for etching a substrate WO2008108603A1 (en)

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KR1020070022866A KR101277504B1 (en) 2007-03-08 2007-03-08 Apparatus for etching a substrate

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Citations (5)

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JPH03228321A (en) * 1990-02-02 1991-10-09 Nec Corp Plasma cvd device
JPH053176A (en) * 1991-06-26 1993-01-08 Nec Corp Plasma processing device
JPH05175162A (en) * 1991-12-20 1993-07-13 Hitachi Ltd Dry etching system
JP2002367967A (en) * 2001-06-07 2002-12-20 Matsushita Electric Ind Co Ltd Method and apparatus for treating plasma
JP2004022821A (en) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp Method and device for dry etching

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Publication number Priority date Publication date Assignee Title
JP4699061B2 (en) * 2005-03-25 2011-06-08 東京エレクトロン株式会社 Substrate removal method, substrate processing apparatus, program

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228321A (en) * 1990-02-02 1991-10-09 Nec Corp Plasma cvd device
JPH053176A (en) * 1991-06-26 1993-01-08 Nec Corp Plasma processing device
JPH05175162A (en) * 1991-12-20 1993-07-13 Hitachi Ltd Dry etching system
JP2002367967A (en) * 2001-06-07 2002-12-20 Matsushita Electric Ind Co Ltd Method and apparatus for treating plasma
JP2004022821A (en) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp Method and device for dry etching

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