JP6076954B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

  For example, in a manufacturing process of a semiconductor device or the like, various processes such as a film forming process and an etching process are performed on a semiconductor wafer (hereinafter referred to as “wafer”). And in these film-forming processes and etching processes, it is necessary to perform a uniform process within the wafer surface.

  In order to perform uniform processing on the wafer, it is necessary to appropriately place the wafer on a mounting table. For this reason, an attempt has been made to use an electrostatic chuck or clamp for the mounting table, for example, for the purpose of suppressing warpage of the wafer and equalizing the in-plane temperature. However, when an electrostatic chuck is used for the mounting table, it is necessary to apply a high voltage to the electrostatic chuck in order to achieve the above object. In such a case, even if it is attempted to detach the wafer from the electrostatic chuck, there is a possibility that electric charges remain on the wafer and cause detachment failure. In addition, when a clamp is used for the mounting table, there is a possibility that the wafer processing may be affected by the arrangement of the clamping mechanism in the vicinity of the wafer, or particles or foreign matters may be generated.

  Therefore, in order to perform uniform processing on the wafer, for example, in the film forming apparatus described in Patent Document 1, the film thickness is increased by growing a film on the surface of the wafer mounted on the mounting table while rotating the mounting table. To equalize. In addition, a solid film is formed on the surface of the mounting table, and the surface roughness of the surface of the solid film is larger than the surface roughness of the surface of the mounting table before forming the solid film. Specifically, arithmetic average roughness (hereinafter referred to as “Ra”) is used as the surface roughness, and Ra of the solid film is large. In this way, by increasing Ra of the mounting table (solid film), it is possible to suppress the positional deviation of the wafer due to the rotation of the mounting table.

JP 2014-33162 A

  However, as a result of investigations by the inventors, friction force generated between the surface of the mounting table and the back surface of the wafer is simply adjusted by adjusting Ra on the surface of the mounting table as in the method described in Patent Document 1. It has been found that there is a case where the value cannot be made sufficiently large (the reason will be described in detail later). In the film forming apparatus, the wafer may be warped by the stress of the formed film, and the frictional force is particularly small.

  When the mounting table is rotated in such a state where the frictional force is small, the rotation of the wafer and the mounting table may not match. In such a case, the reproducibility of the operation pattern of the wafer determined to improve the uniformity of the film thickness distribution cannot be obtained, and the uniformity cannot be improved with high accuracy. Further, the wafer may be misaligned, resulting in a conveyance failure. Therefore, the wafer processing cannot be performed properly, and there is room for improvement.

  This invention is made | formed in view of this point, and aims at carrying out the process with respect to the said board | substrate appropriately by mounting a board | substrate on a mounting base appropriately.

In order to achieve the above object, the present invention is a substrate processing apparatus for processing a substrate, and includes a mounting table on which a substrate is mounted , and a rotating mechanism that rotates the mounting table. The frictional force generated between the surface of the mounting table and the back surface of the substrate is equal to or higher than the inertial force generated on the substrate due to the angular acceleration in the rotation of the mounting table and the displacement of the substrate with respect to the mounting table . It is characterized in that the surface roughness, the surface hardness, and the force for adsorbing the substrate are optimized.

  To calculate the frictional force between the surface of the mounting table and the back surface of the substrate, for example, there is an idea using a model based on Ammonton-Coulomb's friction law, or an idea using a model based on adhesion friction. . There is a difference between these ways of thinking about whether or not to consider the true contact area. Amonton-Coulomb's law of friction does not consider the true contact area, so the only parameter that changes the frictional force is surface roughness. In this case, in order to increase the coefficient of friction, it is inferred that Ra is increased in the method described in Patent Document 1 because the uneven slope on the surface needs to be steeply inclined. On the other hand, in the adhesion friction, the true contact area is considered, and if Ra is increased as described in Patent Document 1, the frictional force cannot be increased. For this reason, as described in the above problem, the frictional force may not be sufficiently increased by simply increasing Ra on the surface of the mounting table.

  Therefore, the inventors conducted further diligent studies and found that the frictional force can be made larger than the force acting on the substrate by optimizing the three parameters of surface roughness, surface hardness, and force for adsorbing the substrate. .

  The present invention has been made on the basis of such knowledge, and uses a mounting table in which surface roughness, surface hardness, and force for adsorbing a substrate are optimized. In such a case, since the frictional force generated between the surface of the mounting table and the back surface of the substrate can be increased as described above, for example, even when the mounting table rotates, the rotation of the substrate and the mounting table can be matched. The reproducibility of the optimum driving pattern can be improved. In addition, the positional deviation of the substrate with respect to the mounting table can be suppressed. Therefore, it is possible to appropriately place a substrate on the mounting table and appropriately perform processing on the substrate.

  The mounting table electrostatically attracts the substrate by a predetermined voltage applied to the mounting table, and the predetermined voltage causes at least a charge remaining on the substrate to be stopped when the electrostatic chucking of the substrate by the mounting table is stopped. A voltage that does not cause desorption abnormality may be used. Note that “no detachment abnormality” means that no detachment failure occurs when the substrate is detached from the mounting table.

  The said substrate processing apparatus may further have a support part which supports the part which is not contacting the said mounting base in the back surface of the board | substrate mounted in the said mounting base.

In such a case, the support unit is configured such that the frictional force generated between the front surface of the support unit and the back surface of the substrate is an inertia generated on the substrate due to angular acceleration in rotation of the mounting table and displacement of the mounting of the substrate with respect to the mounting table. The surface roughness and surface hardness may be optimized so as to be greater than the force .

  The substrate processing apparatus may further include a processing container that accommodates the mounting table, and a decompression mechanism that depressurizes the atmosphere inside the processing container to a predetermined degree of vacuum.

Another aspect of the present invention is a substrate processing method for processing a substrate placed on the mounting table while rotating the mounting table, wherein the mounting table absorbs surface roughness, surface hardness, and the substrate. The inertia force generated on the substrate due to the angular acceleration in the rotation of the mounting table and the deviation of the mounting of the substrate with respect to the mounting table is the friction force generated between the surface of the mounting table and the back surface of the substrate. As described above , the substrate is mounted on the mounting table.

  The substrate is electrostatically attracted by a predetermined voltage applied to the mounting table, and when the electrostatic chucking of the substrate by the mounting table is stopped, at least the charge remaining on the substrate causes a desorption abnormality. There may be no voltage.

  The substrate placed on the mounting table may be supported by a support portion at a portion that is not in contact with the mounting table.

In such a case, the surface roughness and surface hardness of the support portion are optimized, and the frictional force generated between the front surface of the support portion and the back surface of the substrate is measured by the angular acceleration in the rotation of the mounting table and the substrate with respect to the mounting table. The substrate may be supported by the support portion in excess of the inertial force generated on the substrate due to the mounting displacement .

  The processing of the substrate placed on the mounting table may be performed in a reduced pressure atmosphere.

  ADVANTAGE OF THE INVENTION According to this invention, a board | substrate can be mounted appropriately on a mounting base and the process with respect to the said board | substrate can be performed appropriately.

It is a longitudinal cross-sectional view which shows the outline of a structure of the plasma processing apparatus concerning this Embodiment. It is a longitudinal cross-sectional view which shows the outline of a mounting base. It is a top view which shows the outline of a mounting base. It is explanatory drawing which shows a mode that the said board | substrate is mounted with a mounting base, when a board | substrate deform | transforms into a convex shape with respect to a mounting base. It is explanatory drawing which shows a mode that the said board | substrate is mounted with a mounting base when a board | substrate deform | transforms into a concave shape with respect to a mounting base. It is a longitudinal cross-sectional view which shows the outline of the mounting base concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of the mounting base concerning other embodiment.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a longitudinal sectional view showing an outline of a configuration of a plasma processing apparatus 1 as a substrate processing apparatus according to the present embodiment. The plasma processing apparatus 1 is a film forming apparatus that performs plasma CVD (Chemical Vapor Deposition) processing on the surface (upper surface) of a wafer W as a substrate. The present invention is not limited to the embodiments described below.

  The plasma processing apparatus 1 has a processing container 10 as shown in FIG. The processing container 10 has a substantially cylindrical shape with an open ceiling surface, and a radial line slot antenna 40 to be described later is disposed in the opening on the ceiling surface. Further, a loading / unloading port (not shown) for the wafer W is formed on the side surface of the processing container 10, and a gate valve (not shown) is provided at the loading / unloading port. And the processing container 10 is comprised so that the inside can be sealed. The processing container 10 is made of metal such as aluminum or stainless steel, and the processing container 10 is electrically grounded.

  A cylindrical mounting table 20 on which the wafer W is mounted on the surface (upper surface) is provided at the bottom of the processing container 10. The detailed structure of the mounting table 20 will be described later.

  A rotating mechanism 21 that rotates the mounting table 20 is provided on the back side of the mounting table 20. The rotation mechanism 21 has a support 22 and a rotation drive unit 23. The support column 22 supports the back surface of the mounting table 20 and is provided so as to penetrate the bottom surface of the processing container 10. The rotation drive unit 23 is provided at the lower end of the support column 22 outside the processing container 10. Due to the operation of the rotation driving unit 23, the mounting table 20 rotates through the support column 22.

  Below the mounting table 20, an elevating mechanism 30 is provided for appropriately moving the wafer W placed on the mounting table 20 up and down. The lifting mechanism 30 includes a lifting pin 31, a plate 32, a support 33, and a lifting drive unit 34. For example, three elevating pins 31 are provided on the surface of the plate 32, and are configured to project freely on the surface of the mounting table 20. The plate 32 is supported on the upper end of a column 33 that penetrates the bottom surface of the processing container 10. At the lower end of the support column 33, an elevating drive unit 34 disposed outside the processing container 10 is provided. With the operation of the lifting drive unit 34, the three lifting pins 31 penetrating the mounting table 20 are lifted and the upper end of the lifting pins 31 protrudes upward from the surface of the mounting table 20, The upper end is switched to the state of being pulled into the mounting table 20. In this embodiment, the elevating pin 31 functions as a support part of the present invention.

  A radial line slot antenna 40 (radial line slot antenna) that supplies microwaves for plasma generation is provided at the opening on the ceiling surface of the processing vessel 10. The radial line slot antenna 40 includes a microwave transmission plate 41, a slot plate 42, a slow wave plate 43, and a shield lid 44.

The microwave transmission plate 41 is densely provided in the ceiling surface opening of the processing container 10 via a sealing material (not shown) such as an O-ring, for example. Therefore, the inside of the processing container 10 is kept airtight. The microwave transmitting plate 41 is made of a dielectric material such as quartz, Al ₂ O ₃ , AlN, or the like, and the microwave transmitting plate 41 transmits microwaves.

  The slot plate 42 is provided on the surface of the microwave transmission plate 41 so as to face the mounting table 20. The slot plate 42 has a plurality of slots through which microwaves are transmitted, and the slot plate 42 functions as an antenna. The slot plate 42 is made of a conductive material such as copper, aluminum, or nickel.

The slow wave plate 43 is provided on the surface of the slot plate 42. The slow wave plate 43 is made of a low-loss dielectric material such as quartz, Al ₂ O ₃ , or AlN, and the slow wave plate 43 shortens the wavelength of the microwave.

  The shield lid 44 is provided on the surface of the slow wave plate 43 so as to cover the slow wave plate 43 and the slot plate 42. A plurality of annular channels 45 through which a cooling medium flows, for example, are provided inside the shield lid 44. The microwave transmission plate 41, the slot plate 42, the slow wave plate 43, and the shield lid body 44 are adjusted to a predetermined temperature by the cooling medium flowing through the flow path 45.

  A coaxial waveguide 50 is connected to the center of the shield lid 44. The coaxial waveguide 50 has an inner conductor 51 and an outer conductor 52. The inner conductor 51 is connected to the slot plate 42. The lower end portion of the inner conductor 51 is formed in a conical shape, and has a tapered shape whose diameter increases toward the slot plate 42 side. The lower end portion efficiently propagates microwaves to the slot plate 42.

  The coaxial waveguide 50 includes a mode converter 53 that converts a microwave into a predetermined vibration mode, a rectangular waveguide 54, and a microwave generator 55 that generates a microwave in this order from the coaxial waveguide 50 side. It is connected. The microwave generator 55 generates a microwave having a predetermined frequency, for example, 2.45 GHz.

  With this configuration, the microwave generated by the microwave generator 55 sequentially propagates through the rectangular waveguide 54, the mode converter 53, and the coaxial waveguide 50, is supplied into the radial line slot antenna 40, and is delayed. After being compressed by the plate 43 and shortened in wavelength, circularly polarized waves are generated by the slot plate 42, and then transmitted from the slot plate 42 through the microwave transmission plate 41 and radiated into the processing vessel 10. The processing gas is converted into plasma in the processing chamber 10 by the microwave, and the plasma processing of the wafer W is performed by the plasma.

  In the processing container 10, an upper shower plate 60 and a lower shower plate 61 are provided on the top of the mounting table 20. The upper shower plate 60 and the lower shower plate 61 are made of a hollow tube material made of, for example, a quartz tube. The upper shower plate 60 and the lower shower plate 61 are provided with a plurality of openings (not shown) for supplying gas to the wafer W on the mounting table 20 in a distributed manner.

  A plasma generation gas supply source 62 disposed outside the processing container 10 is connected to the upper shower plate 60 via a pipe 63. The plasma generation gas supply source 62 stores, for example, Ar gas as a plasma generation gas. The plasma generation gas is supplied from the plasma generation gas supply source 62 through the pipe 63 into the upper shower plate 60 and is uniformly dispersed in the processing vessel 10.

A processing gas supply source 64 disposed outside the processing container 10 is connected to the lower shower plate 61 via a pipe 65. A processing gas corresponding to a film to be formed is stored in the processing gas supply source 64. For example, when forming a SiN film on the surface of the wafer W, TSA (trisilylamine), N ₂ gas, H ₂ gas or the like is stored as a processing gas, and when forming a SiO ₂ film, TEOS Etc. are stored. From the processing gas supply source 64, the processing gas is introduced into the lower shower plate 61 through the pipe 65, and the processing gas is supplied in a state of being uniformly dispersed in the processing container 10.

  A decompression mechanism 70 that decompresses the atmosphere inside the processing container 10 is provided on the bottom surface of the processing container 10. The decompression mechanism 70 has a configuration in which, for example, an exhaust unit 71 including a vacuum pump is connected to the bottom surface of the processing container 10 via an exhaust pipe 72. The exhaust unit 71 can exhaust the atmosphere in the processing container 10 and reduce the pressure to a predetermined degree of vacuum.

  Next, the detailed structure of the mounting table 20 described above will be described. For the mounting table 20, for example, AlN or the like is used.

  As shown in FIGS. 2 and 3, a first contact region 100 and a second contact region 101 are formed on the surface of the mounting table 20. The first contact region 100 is formed in an annular shape in a plan view on the outer periphery of the mounting table 20. The second contact region 101 is formed in a circular shape in plan view at the center of the mounting table 20.

  In the present embodiment, the wafer W placed on the mounting table 20 is warped by the stress of the film formed. The first contact area 100 and the second contact area 101 are areas where the warped wafer W comes into contact. That is, for example, as shown in FIG. 4, when a tensile stress acts on the wafer W, the wafer W is warped upward and the wafer W is deformed into a convex shape with respect to the mounting table 20, the outer peripheral portion of the wafer W is Contact the first contact area 100. Further, for example, as shown in FIG. 5, when a compressive stress acts on the wafer W, the wafer W is warped downward and the wafer W is deformed into a concave shape with respect to the mounting table 20, the central portion of the wafer W is 2 contact area 101.

  The mounting table 20 has, for example, three through holes 102 penetrating the mounting table 20 in the thickness direction. The elevating pins 31 are inserted into the through holes 102.

  An electrode 103 for electrostatic chuck is provided inside the mounting table 20. The electrode 103 is connected to a DC power source 104 provided outside the processing container 10. This DC power supply 104 can generate a Johnson-Rahbek force on the surface of the mounting table 20 to electrostatically attract the wafer W onto the mounting table 20.

  In addition, a temperature adjusting mechanism 105 that circulates a cooling medium, for example, is provided inside the mounting table 20. The temperature adjustment mechanism 105 is provided outside the processing container 10 and is connected to a liquid temperature adjustment unit 106 that adjusts the temperature of the cooling medium. Then, the temperature of the refrigerant medium is adjusted by the liquid temperature adjusting unit 106, and the temperature of the mounting table 20 can be controlled. As a result, the wafer W mounted on the mounting table 20 can be maintained at a predetermined temperature.

  The mounting table 20 may be connected to a high frequency power source (not shown) for RF bias. The high frequency power source outputs a certain frequency suitable for controlling the energy of ions drawn into the wafer W, for example, a high frequency of 13.56 MHz with a predetermined power.

  The mounting table 20 configured as described above is rotated by the rotating mechanism 21 with the wafer W mounted thereon. Therefore, the frictional force generated between the back surface of the wafer W and the surface of the mounting table 20 acts on the wafer W in order to suppress the positional deviation of the wafer W with respect to the mounting table 20 and to match the rotation of the wafer W and the mounting table 20. Greater than the force to be applied, that is, greater than the inertial force generated by angular acceleration or mounting displacement. Below, the structure of the mounting base 20 for enlarging a frictional force in this way is demonstrated in detail.

In order to calculate the frictional force generated between the wafer W and the mounting table 20, for example, there is a concept using a model based on Ammonton-Coulomb's friction law, and a concept using a model based on adhesion friction. For example, in the case of the idea based on Ammonton-Coulomb's friction law, the frictional force is derived by the following equation (1). In the case of the idea based on adhesion friction (friction generated through inclusions), the frictional force is derived by the following equation (2).
F = μ · N (1)
F = s · A = s · N / H (2)
Where F: friction force, μ: friction coefficient, N: normal force, s: shear strength, A: true contact area, H: surface hardness

  Accordingly, as a result of further intensive studies by the inventors, if the three parameters of the surface roughness, the surface hardness, and the force for attracting the wafer W are optimized in the mounting table 20, the force acting on the wafer W by the frictional force. I found that I could make it bigger.

  First, surface roughness, which is the first parameter, will be described. For example, in manufacturing, the surface roughness is established as an index for managing the surface state, and is easy to measure. Therefore, the surface roughness is used as a parameter. As the surface roughness, a parameter of surface roughness having a high correlation with the true contact area is used. For example, arithmetic average roughness Ra, maximum height Ry, ten-point average roughness Rz, and the like can be used. In the present embodiment, the surface roughness of the first contact region 100 and the surface roughness of the second contact region 101 are the same.

Next, the second parameter, surface hardness, will be described. For example, according to the above formula (2), the surface hardness needs to be reduced. That is, the surface hardness of the contact areas 100 and 101 is preferably reduced. Specifically, for example, by changing the material of the contact regions 100 and 101 or forming a film on the surface of the contact regions 100 and 101, the contact region 100 can be obtained from the surface hardness 10.4 (GPa) of the mounting table 20. , 101 to reduce the surface hardness. If Al ₂ O ₃ is used as the material of the contact regions 100 and 101, the surface hardness can be 6.0 (GPa). If Al ₂ O ₃ is sprayed on the contact regions 100 and 101, the surface hardness can be 9.8 (GPa). If Y ₂ O ₃ is sprayed on the contact regions 100 and 101, the surface hardness can be 5.8 (GPa). If YF ₃ is sprayed on the contact areas 100 and 101, the surface hardness can be 2.9 (GPa).

  Finally, the third parameter, the force for attracting the wafer W, will be described. For example, according to the above formulas (1) and (2), it is necessary to increase the vertical drag of the mounting table 20. Since the weight of the wafer W cannot be changed, for example, the force for attracting the wafer W is increased, the apparent load of the wafer W is increased, and the vertical drag of the mounting table 20 is increased.

  As described above, when a high voltage is applied to the mounting table 20 to electrostatically attract the wafer W, even if an attempt is made to detach the wafer W from the mounting table 20, charges remain on the wafer W, resulting in detachment failure. There is a fear. For this reason, when the wafer W is attracted by the mounting table 20, a low voltage is applied to the mounting table 20. Specifically, the predetermined low voltage is generated when at least the charge remaining on the wafer W is transferred from the mounting table 20 to the wafer when the adsorption of the wafer W by the mounting table 20 is stopped (that is, when the application of the voltage is stopped). This is a voltage that does not cause desorption abnormality when W is desorbed. In such a case, the above-described detachment failure does not occur.

  As described above, in the mounting table 20, the three parameters of the surface roughness, the surface hardness, and the force for attracting the wafer W are optimized in accordance with the processing conditions of the plasma processing. Then, the frictional force between the wafer W and the mounting table 20 is made larger than the force acting on the wafer W.

  For example, as shown in FIG. 5, when a compressive stress acts on the wafer W and the wafer W is deformed into a concave shape with respect to the mounting table 20, a portion other than the central portion of the wafer W in contact with the second contact region 101 is used. In the portion, the back surface of the wafer W and the lift pins 31 may be brought into contact with each other. If it does so, the frictional force which acts on the wafer W can be enlarged by the part which the back surface of the wafer W contacts the raising / lowering pin 31. FIG. In this embodiment, the elevating pin 31 functions as a support part of the present invention.

  In this case, it is preferable to optimize the two parameters of the surface roughness and surface hardness of the tip 31a of the elevating pin 31 in accordance with the plasma processing conditions as in the mounting table 20 described above. Then, the frictional force generated between the back surface of the wafer W and the front surface portion 31a can be increased, and the frictional force acting on the wafer W can be further increased.

  The elevating pins 31 may be supported by, for example, a spring (not shown), and may be configured to be supported by a force equivalent to the weight of the wafer W by the elastic force of the spring. Further, it is preferable to use a material having a small specific heat for the lifting pins 31 and particularly a material having high thermal conductivity for the tip 31a so that the temperature of the mounting table 20 and the lifting pins 31 is the same.

  Next, plasma processing of the wafer W performed by the plasma processing apparatus 1 configured as described above will be described.

  First, the wafer W carried into the processing container 10 is mounted on the mounting table 20 by the lift pins 31. At this time, the DC power supply 104 is turned on, a DC voltage is applied to the electrode 103 of the mounting table 20 at a predetermined low voltage, and the wafer W is attracted by the mounting table 20.

  Thereafter, after the inside of the processing container 10 is sealed, the atmosphere in the processing container 10 is reduced to a predetermined pressure, for example, 400 mTorr (= 53 Pa) by the decompression mechanism 70. Further, a plasma generating gas is supplied from the upper shower plate 60 into the processing container 10, and a processing gas for plasma film formation is supplied from the lower shower plate 61 into the processing container 10.

  As described above, when the plasma generation gas and the processing gas are supplied into the processing container 10, the microwave generator 55 is operated, and the microwave generator 55 has a microwave with a predetermined power at a frequency of 2.45 GHz, for example. Is generated. Then, an electric field is generated on the lower surface of the microwave transmission plate 41, the plasma generation gas is turned into plasma, and the processing gas is turned into plasma, and a film forming process is performed on the wafer W by the active species generated at that time. The In this way, a predetermined film is formed on the surface of the wafer W.

  While the plasma film forming process is performed on the wafer W, the mounting table 20 is rotated by the rotating mechanism 21. By rotating the wafer W mounted on the mounting table 20 in this way, a uniform film formation process is performed on the wafer W within the wafer surface, and a predetermined film is formed with a uniform film thickness. .

  Further, even when the mounting table 20 is rotated and an inertial force generated by angular acceleration or mounting displacement is applied to the wafer W, the frictional force generated between the back surface of the wafer W and the surface of the mounting table 20 exceeds the above force. Therefore, the rotation of the wafer W and the mounting table 20 can be matched, and the reproducibility of the optimum operation pattern of the wafer W can be improved. Moreover, the position shift of the wafer W with respect to the mounting table 20 can also be suppressed, and the conveyance failure of the wafer W can be suppressed.

  Thereafter, when a predetermined film is grown and a film having a predetermined film thickness is formed on the wafer W, the supply of the plasma generation gas and the processing gas and the microwave irradiation are stopped. Thereafter, the wafer W is unloaded from the processing container 10 and a series of plasma film forming processes is completed.

  According to the above embodiment, since the mounting table 20 with optimized surface roughness, surface hardness, and force for attracting the wafer W is used, the gap between the back surface of the wafer W and the surface of the mounting table 20 is used. It is possible to make the frictional force generated in the step larger than the force acting on the wafer W. For this reason, even if the mounting table 20 rotates in the plasma processing, the rotation of the wafer W and the mounting table 20 can be matched, and the positional deviation of the wafer W with respect to the mounting table 20 can be suppressed. Therefore, it is possible to appropriately place the wafer W on the mounting table 20 and appropriately perform plasma processing on the wafer W.

  Also, as shown in FIG. 5, when the wafer W is deformed into a concave shape with respect to the mounting table 20, the back surface of the wafer W and the lift pins 31 are brought into contact with each other, so that the frictional force acting on the wafer W can be increased. it can. Furthermore, since the surface roughness and surface hardness are optimized at the tip 31a of the elevating pin 31, the frictional force acting on the wafer W can be further increased.

  In the above embodiment, the wafer W is deformed into a convex shape with respect to the mounting table 20 as shown in FIG. 4, and the wafer W is concave with respect to the mounting table 20 as shown in FIG. The first contact region 100 and the second contact region 101 were formed on the mounting table 20 assuming the case of deformation. However, for example, the wafer W may be wavy in the wafer surface, or may be flat, that is, the contact location of the wafer W may not be specified on the surface of the mounting table 20. Therefore, the contact region 200 may be formed on the entire surface of the mounting table 20 as shown in FIG. Similar to the contact areas 100 and 101, the contact area 200 is formed by optimizing its surface roughness and surface hardness.

  Also in this embodiment, the same effect as the above embodiment can be enjoyed, that is, the frictional force generated between the back surface of the wafer W and the surface of the mounting table 20 is increased, and the wafer W is appropriately applied to the mounting table 20. It can be mounted on. Moreover, for example, when the electrode 103 of the mounting table 20 is omitted and the frictional force is increased only by the contact region 200, it is not necessary to use AlN or the like as the material of the mounting table 20, and the manufacturing cost of the plasma processing apparatus 1 is greatly increased. It can be cheaper.

  In the above embodiment, the plasma processing using microwaves has been described as an example. However, the present invention is not limited to this, and the present invention can of course be applied to plasma processing using high-frequency voltages. Furthermore, in the above embodiment, the present invention is applied to plasma processing for performing film formation processing, but the present invention is also applied to substrate processing other than film formation processing, for example, plasma processing for performing etching processing and sputtering. it can.

  The present invention can also be applied to processes other than plasma processing, that is, any process as long as it is a process for a substrate placed on a mounting table. Further, the present invention is not limited to the substrate processing for performing the processing while rotating the substrate on the mounting table, but is particularly useful for the substrate processing performed while rotating the substrate as described above.

  Further, the substrate to be processed by the plasma processing of the present invention may be any of a semiconductor wafer, an organic EL substrate, a substrate for FPD (flat panel display), and the like.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus 10 Processing container 20 Mounting base 21 Rotating mechanism 30 Elevating mechanism 31 Elevating pin 31a Tip part 70 Decompression mechanism 100 1st contact area 101 2nd contact area 103 Electrode 200 Contact area W Wafer

Claims (10)

A substrate processing apparatus for processing a substrate,
A mounting table for mounting the substrate ;
A rotation mechanism for rotating the mounting table ,
In the mounting table described above, the frictional force generated between the surface of the mounting table and the back surface of the substrate is greater than the inertial force generated on the substrate due to the angular acceleration in the rotation of the mounting table and the displacement of the mounting of the substrate with respect to the mounting table. The substrate processing apparatus is characterized in that the surface roughness, the surface hardness, and the force for adsorbing the substrate are optimized. The mounting table electrostatically attracts the substrate by a predetermined voltage applied to the mounting table,
2. The substrate processing according to claim 1, wherein the predetermined voltage is a voltage at which at least the charge remaining on the substrate does not cause a desorption abnormality when the electrostatic adsorption of the substrate by the mounting table is stopped. apparatus. The substrate processing apparatus according to claim 1, further comprising a support portion that supports a portion that is not in contact with the mounting table on a back surface of the substrate mounted on the mounting table. In the support unit, the frictional force generated between the surface of the support unit and the back surface of the substrate is more than the inertial force generated on the substrate due to the angular acceleration in the rotation of the mounting table and the displacement of the mounting of the substrate with respect to the mounting table. The substrate processing apparatus according to claim 3, wherein the surface roughness and the surface hardness are optimized. A processing container for housing the mounting table;
Characterized by further comprising a pressure reducing mechanism for reducing the pressure of an ambient in the interior of the processing container to a predetermined degree of vacuum, the substrate processing apparatus according to any one of claims 1-4. A substrate processing method for processing a substrate mounted on the mounting table while rotating the mounting table,
The mounting table is optimized for surface roughness, surface hardness, and the force to adsorb the substrate,
The friction force generated between the front surface of the mounting table and the back surface of the substrate is set to be greater than the inertial force generated on the substrate due to the angular acceleration in the rotation of the mounting table and the displacement of the substrate with respect to the mounting table. A substrate processing method, wherein a substrate is placed on the substrate. The substrate is electrostatically attracted by a predetermined voltage applied to the mounting table,
The substrate processing according to claim 6 , wherein the predetermined voltage is a voltage at which at least the electric charge remaining on the substrate does not cause a desorption abnormality when the electrostatic adsorption of the substrate by the mounting table is stopped. Method. Substrate placed on the mounting table, characterized in that the supporting portion not in contact with the mounting table by the support unit, the substrate processing method according to claim 6 or 7. The support is optimized for surface roughness and surface hardness,
The frictional force generated between the front surface of the support portion and the back surface of the substrate is set to be equal to or higher than the inertial force generated on the substrate due to the angular acceleration in the rotation of the mounting table and the deviation of the mounting of the substrate with respect to the mounting table. The substrate processing method according to claim 8 , wherein the substrate is supported by the substrate. Processing of the substrate mounted on the mounting table is characterized in that it is carried out in a reduced pressure atmosphere, the substrate processing method according to any one of claims 6-9.

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