WO2008108477A1 - Procédé de formation de couche et processus de fabrication de dispositif d'affichage à cristaux liquides - Google Patents

Procédé de formation de couche et processus de fabrication de dispositif d'affichage à cristaux liquides Download PDF

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Publication number
WO2008108477A1
WO2008108477A1 PCT/JP2008/054229 JP2008054229W WO2008108477A1 WO 2008108477 A1 WO2008108477 A1 WO 2008108477A1 JP 2008054229 W JP2008054229 W JP 2008054229W WO 2008108477 A1 WO2008108477 A1 WO 2008108477A1
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Prior art keywords
substrate
deposition
film
ion beam
liquid crystal
Prior art date
Application number
PCT/JP2008/054229
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English (en)
Inventor
Yohei Ishida
Hirokatsu Miyata
Akira Sakai
Yasufumi Asao
Original Assignee
Canon Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008042178A external-priority patent/JP2008248381A/ja
Application filed by Canon Kabushiki Kaisha filed Critical Canon Kabushiki Kaisha
Priority to US12/090,275 priority Critical patent/US20100181013A1/en
Publication of WO2008108477A1 publication Critical patent/WO2008108477A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C23C14/226—Oblique incidence of vaporised material on substrate in order to form films with columnar structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133734—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by obliquely evaporated films, e.g. Si or SiO2 films

Definitions

  • the alignment of the liquid crystal molecules in essential for the liquid crystal display device to have a switching function and therefore a characteristic of the alignment film largely affects a display characteristic of the liquid crystal display device .
  • an organic alignment film represented by a polyimide film has been used widely.
  • photodeterioration of the alignment film poses a problem. This problem can be solved by using an inorganic alignment film instead of the organic alignment film.
  • the inorganic alignment film is generally formed by using deposition (evaporation) which is called oblique deposition.
  • evaporation evaporation
  • This is a method for forming a film on a substrate surface by vaporizing from an evaporation source, an inorganic material as a material for the alignment film and depositing the vaporized inorganic from an oblique direction.
  • the material is vaporized on a boat or in a crucible by resistance heating or electron beam irradiation.
  • the present invention is also applicable to other inorganic materials.
  • the deposition is performed in a state in which a normal to the substrate and a line segment connecting a center of the substrate and the evaporation source are kept at a certain angle (generally called "deposition angle")
  • a SO that a film formed on the substrate microscopically has a column structure of minute SiO x grown in the oblique direction.
  • the surface of the oblique deposition film having the SiO x column structure has a shape anisotropy corresponding to the deposition angle and the deposition direction, so that it is considered that the liquid crystal is aligned in one direction.
  • the inorganic alignment film formed by the oblique deposition is different in state of liquid crystal alignment depending on the deposition angle.
  • the liquid crystal device is required to have the pretilt angle to some extent.
  • the deposition angle may be changed in ordinary vapor deposition but at a large deposition angle of 90 degrees, a change in pretilt angle with respect to the change in deposition angle is increased.
  • a diameter of the substrate is non-negligibly larger than a distance from the substrate to the evaporation source, such an angle (direction) that the evaporation source is viewed from an in-plane point of the substrate is different depending on an in-plane position, with respect to both of a polar angle and an azimuth angle.
  • the polar angle means an angle from a normal to the substrate surface
  • the azimuth angle is an in-plane angle and is taken as 0 deg. at the center of the substrate.
  • a polar angle is referred to as a deposition angle at the point (position) and an azimuth is referred to as a deposition azimuth.
  • In-plane non-uniformity of such deposition angle and deposition azimuth causes non-uniformity of the pretilt angle, thus leading to a contrast non-uniformity, a brightness non-uniformity, and a lowering in yield of the liquid crystal display device.
  • U.S. Patent No. 5,268,781 proposes a method of forming two (first and second) layers by oblique deposition in order to control a pretilt angle, in which the oblique deposition for the first layer is performed while irradiating a substrate with an ion beam.
  • it is difficult to bombard the entire substrate surface with the ion beam at a uniform intensity when an area of the substrate is increased. Further, such an effect of compensating for a distribution of a deposition angle with respect to a substrate inclination direction is not achieved, so that it is difficult to obviate a non-uniformity of alignment due to a difference in deposition angle.
  • a principal object of the present invention is to provide a film forming method having solved the above-described problems.
  • Another object of the present invention is to provide a process for producing a liquid crystal display device including the film forming method.
  • a method of forming a film on a substrate comprising: a step of depositing a material vaporized from an evaporation source onto a surface of a substrate while inclining the surface of the substrate with respect to a direction from the evaporation source to the substrate; and a step of providing the surface of the substrate with an energy depending on a deposition angle.
  • a production process of a liquid crystal display device comprising: a step of depositing an inorganic material vaporized from an evaporation source on a surface of a substrate while inclining the surface of the substrate with respect to a direction from the evaporation source to the substrate; a step of providing the surface of the substrate with an energy depending on a deposition angle of the inorganic material on the surface of the substrate, thereby forming a film of the inorganic material on the substrate; and applying two substrates each on which the film of the inorganic material is formed so that their film formed surfaces are disposed opposite to each other.
  • the large-size substrate may, e.g., include a substrate of 20 cm or more in diameter.
  • the deposition distance can be decreased to contribute to downsizing of the production apparatus.
  • the use of the film forming method of the present invention contributes to a reduction in production cost.
  • Figure 1 is a schematic view showing an embodiment of a constitution of an apparatus for performing oblique deposition.
  • Figure 2 is a schematic view showing an embodiment of a film forming method of the present invention.
  • Figure 3 is a schematic view showing an embodiment of a deposition method in the film forming method of the present invention.
  • Figure 4 and Figures 5 (a) to 5 (c) are schematic views each showing an embodiment of ion beam irradiation in the film forming method of the present invention.
  • Figure 7 is a schematic view showing another embodiment of the ion beam irradiation in the film forming method of the present invention.
  • Figure 8 is an explanatory view of a pretilt angle .
  • Figures 10 and 11 are schematic views each showing an embodiment of providing a temperature distribution providing method.
  • Figures 12 and 13 are graphs each for illustrating an embodiment in which control of a pretilt angle is performed by ion beam irradiation.
  • Figures 14 and 15 are schematic views showing measuring positions of the pretilt angle at some points on a substrate in Example 1 and Example 3, respectively.
  • Figure 16 is a graph showing changes in alignment film density and pretilt angle by ion beam irradiation in the present invention.
  • the present inventors have found that a film density of an oblique deposition film and a pretilt angle have a correlation and that the film density is changed by irradiation intensity of an ion beam or substrate heating, thereby to lead to a change in the pretilt angle. Based on these foundings, it has been recognized that it is necessary to uniformize the film density of a liquid crystal alignment film in order to ensure uniformity of the pretilt angle and liquid crystal alignment in a plane of the substrate.
  • a film used in the film forming method of the present invention is not particularly limited but may, e.g., include a liquid crystal alignment film, an optical thin film, etc. In the following, description will be made by using the liquid crystal alignment film.
  • FIG. 1 shows an embodiment of an apparatus constitution in the case of performing an ordinary oblique deposition.
  • a material vaporized or evaporated from an evaporation source 11 reaches a substrate 12 set at a certain deposition angle to form a film.
  • a deposition angle with respect to directions with respect to a polar angle and an azimuth angle is different.
  • the material emitted from the evaporation source 11 reaches the substrate 12 with a deposition angle 15 at the center of the substrate 12, a deposition angle 16 at an upper portion of the substrate 12, and a deposition angle 17 at a lower portion of the substrate 12.
  • the material emitted from the evaporation source 11 reaches the substrate 12 at both end portions of the substrate 12 at angles different from that (0 deg.) at the center of the substrate 12.
  • the deposition may be performed by using a deposition preventing member 21 while moving the substrate 12 as shown in Figures 2 and 3. Specifically, the deposition is performed, while moving the substrate 12 in a substrate conveyance direction 32, in such a constitution that only a deposition species having an azimuth angle component in a limited range as shown by a deposition site 31 in Figure 3 reaches the substrate 12.
  • a deposition preventing member 21 while moving the substrate 12 in a substrate conveyance direction 32, in such a constitution that only a deposition species having an azimuth angle component in a limited range as shown by a deposition site 31 in Figure 3 reaches the substrate 12.
  • an oblique deposition film such that the same pretilt angle is provided at upper and lower portions of the substrate 12 by providing energy to a part of the substrate 12 during the oblique deposition to cause a change in formation of the oblique deposition film.
  • pretilt angle of liquid crystal
  • a liquid crystal display device prepared by applying glass substrates 84 each provided with a liquid crystal alignment film 83 with a spacing therebetween into which a liquid crystal consisting of liquid crystal molecules 82 is introduced
  • an average of values of inclination of the liquid crystal molecules 82 with respect to a normal to the substrate is referred to as a "pretilt angle”.
  • the pretilt angle is measurable by measuring/observation methods such as a crystal rotation method, a magnetic field threshold method, a conoscope observation, and the like.
  • the change in energy provided locally to a part of the substrate 12 is such a change that it affects the formation of the oblique deposition film with the result that the density of the oblique deposition film is uniformized in the plane of the substrate. This change is required to be suppressed within a range not causing non-uniformity of alignment by the pretilt angle distribution in the plane of the substrate .
  • An ion source 23 for generating an ion beam is disposed at positions as shown in Figures 2 and 4. That is, the ion source 23 is disposed in a flat plane including a line segment connecting an evaporation source 11 and the center of a substrate 12 and a normal 14 to the substrate 12.
  • Figure 4 is a schematic view such that Figure 2 is rotated 90 deg. around the line segment connecting the evaporation source 11 and the substrate 12 as an axis and that the evaporation source 11 and a deposition preventing member 21 are omitted for illustration purpose.
  • Figure 12 is a graph showing a relationship between the deposition angle and the pretilt angle at the time of ion beam unirradiation and irradiation of argon ion beam under a condition of an anode voltage of 200 V and an anode current of 2A and under a condition of an anode voltage of 200 V and an anode current of IA. From this figure, it is possible to confirm a lowering in pretilt angle by the ion beam irradiation.
  • Figure 13 is a graph showing a relationship between the anode current and the pretilt angle under application of the anode voltage of 200 V at a deposition angle of 65 deg. and a deposition angle of 70 deg. It is possible to confirm that the pretilt angle is decreased with an increase in anode current both in the cases of the deposition angles 65 deg. and 70 deg.
  • the pretilt angle is controllable by the anode current set with respect to the ion source. Similar studies are conducted also with respect to the anode voltage, so that similar tendency is confirmed. That is, it is clarified that the film density is increased by the increase in power of the irradiation beam and that the pretilt angle is lowered by the increase in power of the irradiation beam.
  • ion beam irradiation method there are no limitations to an ion beam irradiation method, species of ions, and types of the ion source so long as the above-described pretilt angle lowering effect is achieved.
  • the irradiation ion beam it is possible to use those of argon ion, oxygen ion, nitrogen ion, and the like or mixture ions thereof.
  • the ion source it is possible to use those of an end hole type, hollow cathode type, a grid type, and the like.
  • ion beam irradiation method irradiation methods (a) and (b) described below are relatively easily applicable, thus being preferred.
  • the irradiation position is selected by using the deposition preventing member 22 capable of controlling the ion beam irradiation position and the power of the ion beam is changed depending no the selected irradiation position, so that it is possible to effect control of local growth of the oblique deposition film.
  • the deposition preventing member 22 provided with an opening (slit) , as shown in Figures 5 (a) to 5(c), it is possible to move the ion beam irradiation position.
  • the shape of the opening may be any shape so long as the opening is capable of passing therethrough the ion beam with the same width as that of a deposition site (portion) .
  • the irradiation intensity is set so be larger at an ion beam irradiation site 51, medium degree at an ion beam irradiation site 52, and smaller at an ion beam irradiation site 53.
  • the irradiation intensity is set so be larger at an ion beam irradiation site 51, medium degree at an ion beam irradiation site 52, and smaller at an ion beam irradiation site 53.
  • the ion beam has an intensity distribution such that it is highest at the center of the ion beam and is gradually decrease with a radial distance from the center.
  • this intensity distribution it is possible to provide different energy values to the substrate surface.
  • a target deposition site is an area 31
  • the substrate bombarded with the ion beam so that the ion beam is centered on an upper end position 41 in the area 31.
  • the substrate is bombarded with the ion beam having the intensity distribution with respect to a radial direction at each of points in the area 31 in different radial positions, so that different energy values are provided at the positions.
  • FIG. 6 is a schematic view showing the deposition apparatus shown in Figure 4 when the apparatus is viewed from a crosswise direction.
  • the ion beam center is set at an irradiation position 61 at the upper end portion of the substrate, so that the substrate is bombarded with the ion beam at a position radially distant from the ion beam center with a downward distance from the irradiation position 61, thus resulting in a lowering in irradiation intensity.
  • the irradiation intensity is strong at the substrate upper portion and is weak at the substrate center. Further, at the substrate lower portion, the ion beam irradiation is not performed or an influence thereof is very small.
  • the oblique deposition is performed, so that it is possible to form an oblique deposition film with a uniform film density over the entire substrate surface.
  • the irradiation angle of the ion beam or a distance from the substrate is set.
  • the method of providing the temperature distribution on the substrate may be any method so long as the method has an effect on the growth of the oblique deposition film so that a film density distribution is uniform in an acceptable image over the entire substrate surface and that a pretilt angle distribution of a liquid crystal cell prepared by using the substrate is uniform in an acceptable range.
  • a substrate conveyance mechanism 102 is provided with a plurality of temperature control elements such as heaters, Peltier elements, and the like. It is also possible to use a method in which local irradiation with infrared rays or lamp heating is performed, and the like method.
  • a substrate temperature is set so as to be high at the substrate upper portion and low at the substrate lower portion. As a result, it is possible to ensure film density uniformization at the substrate upper and lower portions by the film growth control during the oblique deposition.
  • the evaporation source 11 is not particularly limited so long as it is capable of forming the oblique deposition film on the substrate but may preferably employ a method liable to realize structural anisotropy of the oblique deposition film, 'such as electron beam deposition, resistance heating, or the like.
  • silicon dioxide SiC>2
  • SiO silicon monoxide
  • MgO magnesium oxide
  • Al oxide AI2O3
  • zinc oxide ZnO
  • titanium oxide Ti ⁇ 2
  • the material is silicon oxide (SiO x ) such as silicon dioxide (Si ⁇ 2) or silicon monoxide (SiO).
  • the production apparatus of the liquid crystal alignment film according to the present invention is constituted by a vacuum chamber, an evacuation device for evacuating the vacuum chamber, a substrate moving mechanism for moving the substrate in the vacuum chamber, an evaporation source, a deposition preventing member for limiting an azimuth angle direction during deposition, and a device for providing energy change to deposition particles flying to the substrate.
  • the substrate moving mechanism is a mechanism for performing setting of the deposition angle and holding and movement of the substrate in the chamber during the deposition and is not limited with respect to a constitution thereof.
  • the evaporation source is used for vaporizing an evaporation (deposition) source material to cause deposition species to fly to the substrate and may include those utilizing electron beam (EB) deposition, resistance heating deposition, and the like.
  • the evaporation source material introduced into the evaporation source is not particularly limited so long as the deposited oblique deposition film provides appropriate liquid crystal alignment but may preferably include silicon oxide (SiO x ) , particularly silicon dioxide (Si ⁇ 2) from the viewpoint of performances required for a liquid crystal device.
  • the deposition preventing member is used for keep an angle with respect to the azimuth angle direction during the oblique deposition within a certain angle distribution. .
  • the deposition preventing member is required to be appropriately set with respect to a shape, a mounting place, and the like.
  • the ion source it is possible to use any ion source so long as the ion source is capable of realizing uniformization of the film density at any place on the substrate.
  • the ion source may be an end hole type ion source or a grid type ion source.
  • Species of the ion beam generated from the ion source may include argon ion, oxygen ion, nitrogen ion, etc .
  • the inorganic alignment film is formed by using ion beam assist deposition and oblique deposition in combination.
  • particles of silicon dioxide SiC>2 (particle size of 1 to 2 mm) are introduced as an evaporation source material.
  • an ion source 23 an end hole type ion gun is used.
  • an Si (silicon) substrate 12 having a diameter of 200 mm as a substrate is mounted on a substrate conveyance mechanism 13.
  • a reflection electrode and a transistor for driving the liquid crystal display device are formed on the substrate 12.
  • a deposition angle is set to 65 deg.
  • the deposition angle is an angle formed between a normal to the Si substrate 12 and a line segment connecting the center of the Si substrate 12 and the evaporation source 11.
  • a deposition preventing member 21 provided with a fixed slit for limiting an azimuth angle distribution is disposed.
  • another deposition preventing member 22 provided with a slit for limiting fluxes of an ion beam emitted from the ion source 23 and controlling an irradiation position is disposed.
  • the evaporation source 11 is actuated to generate fluxes of deposition particles.
  • feedback control is automatically made so that a film forming speed is 0.5 nm/s on a film thickness monitor.
  • the film thickness monitor is located at a position, with a deposition angle of 0 deg. and a deposition distance of 1 m, at which the deposition species flying toward the Si substrate is not blocked by the deposition preventing member.
  • the ion source 23 is actuated and a flow rate of Ar gas is set so as to provide the ion source 23 with an anode voltage of 200 V, an anode current of 1.5 A, and a neutralizer current of 200 mA.
  • uniformity of alignment of the alignment film is improved by performing the ion beam assist deposition for changing the ion beam power depending on the irradiation position to control the ion beam power in correspondence with a length of the deposition distance and a value of the deposition angle at each point on the Si substrate.
  • an Si substrate and an ITO glass substrate are cut from the above prepared respective substrates.
  • a sealing agent containing silica beads (particle size: 3 ⁇ m) as a spacer is applied and the two substrates are applied to each other so that inorganic alignment films on the substrates are disposed in an anti-parallel constitution.
  • the sealing agent is thermally cured to prepare a blank cell (into which a liquid crystal is not injected) .
  • a cell gap of the blank cell can be confirmed that it is about 3 ⁇ m at the respective points in the blank cell.
  • the liquid crystal mixture (MLC-6608) is injected, followed by sealing treatment.
  • the resultant cell is heated to a nematic-isotropic phase transition temperature (91 °C) or more to effect alignment treatment.
  • a plurality of liquid crystal display devices is prepared from the 2 mm-thick (8-inch) Si substrate and the 2 mm-thick (8-inch) ITO glass substrate.
  • V-R characteristic A voltage-reflectance characteristics (V-R characteristic) of each of the liquid crystal display devices is similar on'e, so that it is possible to 5 confirm that each of the liquid crystal display devices provides the same pretilt angle.
  • a reflection type projection apparatus is prepared by using three liquid crystal display devices prepared above.
  • An inorganic alignment film and a liquid 15 crystal cell are prepared in the same manner as in
  • An inorganic alignment film is prepared in the same manner as in Example 1 except that such an ion source that an irradiation intensity distribution is present in an ion beam irradiation range is used instead of such a manner that the ion beam irradiation position scanning and the irradiation amount control by the movement of the deposition preventing member 22 provided with the slit are performed.
  • an irradiation angle of the ion gun is set so that an ion current density of the ion beam is highest at a point at which the deposition distance is largest on the Si substrate, i.e., the deposition angle is smallest (ion beam irradiation position center 61 in Figure 6) .
  • Measurement of the ion current density is performed by using an ion current monitor.
  • Setting of the ion source includes the anode voltage of 200 V and the anode current of 1.5 A.
  • a liquid crystal cell is prepared by applying two substrates to each other and subjected to measurement of the pretilt angle in the same manner as in Example 1. Measurement results of the pretilt angle at the respective points on the substrate are shown in Table 3 below, so that it is understood that uniformity in pretilt angle is also ensured in this example .
  • oblique deposition is performed while locally heating a substrate by a substrate heater mounted on a substrate conveyance mechanism.
  • the temperature of the heater is set to 200 0 C at a site 152, 125 °C at a site 153, and 50 °C at a site 154 on the substrate.
  • An inorganic alignment film is prepared on an Si substrate and an ITO glass substrate in the same manner as in Example 1 except that the ion beam is not 5 used.
  • an inorganic alignment film is prepared by using the oblique deposition apparatus including the slit for limiting the deposition particle fluxes and the slit for limiting the ion beam fluxes used in Example 1 and using the deposition 5 apparatus provided with the local substrate heating device using the plurality of heaters used in Example 3.
  • the temperatures at the respective substrate sites shown in Figure 15 are set. Specifically, the substrate temperature is set to 150 deg. at the site 152, 100 °C at the site 153, and 50 °C at the site 154.
  • the oblique deposition is performed while simultaneously effecting the ion beam irradiation intensity modulation and the scanning.
  • ion beam intensity set values include the anode voltage of 150 V and the anode current of 2A in the case of the largest irradiation intensity (the irradiation site 51 in Figure 5) and the anode voltage of 150 V and the anode current IA in the case of the smallest irradiation intensity (the irradiation site 53 in Figure 5) .
  • An inorganic alignment film is prepared in the same manner as in Example 4 except that the substrate is bombarded with the ion beam in the same manner as in Example 2 instead of the ion beam scanning in Example 4.
  • Setting during ion beam irradiation includes the anode voltage of 150 V and the anode current of IA. In this embodiment, the same effect as in Example 4 is achieved.

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Abstract

Cette invention concerne un procédé de formation d'une couche sur un substrat comprenant une étape consistant à déposer un matériau vaporisé à partir d'une source d'évaporation sur une surface d'un substrat tout en inclinant la surface du substrat selon une direction allant de la source d'évaporation vers le substrat, et une étape consistant à appliquer de l'énergie sur la surface du substrat en fonction d'un angle de dépôt.
PCT/JP2008/054229 2007-03-02 2008-03-03 Procédé de formation de couche et processus de fabrication de dispositif d'affichage à cristaux liquides WO2008108477A1 (fr)

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US12/090,275 US20100181013A1 (en) 2007-03-02 2008-03-03 Film forming method and production process of liquid crystal display device

Applications Claiming Priority (4)

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JP2007-053253 2007-03-02
JP2007053253 2007-03-02
JP2008042178A JP2008248381A (ja) 2007-03-02 2008-02-22 膜の形成方法および液晶表示素子の製造方法
JP2008-042178 2008-02-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3140888A1 (fr) * 2022-10-12 2024-04-19 Safran Procede de depot de revetement

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0541388A1 (fr) * 1991-11-08 1993-05-12 Victor Company Of Japan, Limited Dispositif d'affichage à cristal liquide et son procédé de fabrication
JPH11160711A (ja) * 1997-11-25 1999-06-18 Victor Co Of Japan Ltd 液晶配向膜の製造方法及びその装置
US6195146B1 (en) * 1996-05-10 2001-02-27 International Business Machines Corporation Tilted liquid crystal alignment produced by ion beam treatment on the alignment layer using a voltage less than 200v
US6313896B1 (en) * 1999-08-31 2001-11-06 International Business Machines Corporation Method for forming a multi-domain alignment layer for a liquid crystal display device
US20020186336A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Tilted vertical alignment of liquid crystals employing inorganic thin film composition and ion beam treatment
WO2006123803A1 (fr) * 2005-05-19 2006-11-23 Canon Kabushiki Kaisha Dispositif d'affichage a cristaux liquides

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0541388A1 (fr) * 1991-11-08 1993-05-12 Victor Company Of Japan, Limited Dispositif d'affichage à cristal liquide et son procédé de fabrication
US6195146B1 (en) * 1996-05-10 2001-02-27 International Business Machines Corporation Tilted liquid crystal alignment produced by ion beam treatment on the alignment layer using a voltage less than 200v
JPH11160711A (ja) * 1997-11-25 1999-06-18 Victor Co Of Japan Ltd 液晶配向膜の製造方法及びその装置
US6313896B1 (en) * 1999-08-31 2001-11-06 International Business Machines Corporation Method for forming a multi-domain alignment layer for a liquid crystal display device
US20020186336A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Tilted vertical alignment of liquid crystals employing inorganic thin film composition and ion beam treatment
WO2006123803A1 (fr) * 2005-05-19 2006-11-23 Canon Kabushiki Kaisha Dispositif d'affichage a cristaux liquides

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 199935, Derwent World Patents Index; AN 1999-408511 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3140888A1 (fr) * 2022-10-12 2024-04-19 Safran Procede de depot de revetement

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