WO2008104096A1 - Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci - Google Patents

Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci Download PDF

Info

Publication number
WO2008104096A1
WO2008104096A1 PCT/CN2007/000627 CN2007000627W WO2008104096A1 WO 2008104096 A1 WO2008104096 A1 WO 2008104096A1 CN 2007000627 W CN2007000627 W CN 2007000627W WO 2008104096 A1 WO2008104096 A1 WO 2008104096A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat dissipation
light
emitting diode
electrodes
dissipation structure
Prior art date
Application number
PCT/CN2007/000627
Other languages
English (en)
Chinese (zh)
Inventor
Tsungwen Chan
Chinhsiang Ku
Original Assignee
Tsungwen Chan
Chinhsiang Ku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsungwen Chan, Chinhsiang Ku filed Critical Tsungwen Chan
Priority to PCT/CN2007/000627 priority Critical patent/WO2008104096A1/fr
Publication of WO2008104096A1 publication Critical patent/WO2008104096A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a production technology and structure of a light-emitting electronic component, and more particularly to a method and a structure for manufacturing a single surface-adhesive light-emitting diode. Background technique
  • LEDs Light Emitting Diodes
  • LEDs Light Emitting Diodes
  • the light-emitting diode is a light-emitting element made of a semiconductor material, and has two electrode terminals, a voltage is applied between the terminals, and a very small current is supplied, and the remaining energy is lighted by the combination of electrons and holes.
  • the form of the excitation is released, and the basic illuminating element of the illuminating diode is different from the general incandescent bulb, and the illuminating diode is cold illuminating, which has the advantages of low power consumption, long component life, no need for warming time, fast response, and the like.
  • it is small in size, shock-resistant, and suitable for mass production. It is easy to make extremely small or array components with the application requirements. Therefore, the current LEDs have been widely used in the indicators and display of information, communication and consumer electronics, and become an indispensable important component in daily life.
  • the die is packaged into different light-emitting diodes according to different applications of various products.
  • the packaged product types include bullet type, cluster type, digital display, dot matrix type and surface adhesion type (SMD).
  • SMD surface adhesion type
  • the surface-adhesive light-emitting diode is smaller than other conventional light-emitting diodes, so the surface-adhesive type is mainly used in the screen backlight of a mobile phone and the button of a mobile phone, and the demand in the current market is very large.
  • the above-mentioned light-emitting diode has a much lower heat loss than a general incandescent light bulb, so the heat generation problem is not considered in general application.
  • the heat has been greatly increased. If it is a light-emitting diode array, the heat can not be ignored. To this end, the current LED design has gradually increased the heat dissipation structure in the process.
  • the heat dissipation structure of the conventional surface-adhesive light-emitting diode is as shown in FIG. 4 of US Pat. No. 7,138,660, the light-emitting diode of the light-emitting diode is placed on the positive electrode terminal, and the light-emitting crystal is further The particles are respectively wired to the ends of the positive and negative electrodes, and the completed light-emitting diode does not require additional optical components or reflectors, and the path of the light after welding can be parallel to each circuit board.
  • the heat generated by the surface-adhesive light-emitting diode is conducted through the metal of the positive terminal to conduct heat outward.
  • the heat dissipation mechanism still has the following disadvantages, which need to be improved -
  • the heat dissipation mechanism of the existing light-emitting diode is insufficient to cope with the heat generated by it, and when the temperature rises, not only the brightness is lowered, but also when the temperature exceeds 85 degrees Celsius, the deterioration of the element is accelerated.
  • Phosphor used in LED package when the temperature is too high, it will absorb moisture after shutdown. These water molecules will blacken the phosphor, which will reduce the luminous efficiency and affect the product efficiency.
  • the existing light-emitting body will guide the heat to the copper foil on the printed circuit board to dissipate it. "But the heat dissipation mechanism based on the heat conduction of the two electrodes is very inefficient, which is insufficient for the effective conduction of the light-emitting diode. Thermal energy.
  • the light-emitting dies of the existing light-emitting diodes do not use a heat dissipation mechanism during the packaging process, so a large number of heat dissipation and processing problems are generated, which is not economical. Summary of the invention
  • An object of the present invention is to provide a method for manufacturing a single surface-adhesive light-emitting diode and Structure, which achieves sufficient heat dissipation through an added heat dissipation structure, and the added structure can be combined with existing processes without requiring a substantial increase in cost,
  • Another object of the present invention is to provide a method of fabricating a single surface-adhesive light-emitting diode and a structure thereof, the heat-dissipating structure of which can be combined with the heat-dissipating mechanism of the printed circuit board to more effectively transmit the heat energy generated by the light-emitting diode.
  • a single surface-adhesive light-emitting diode structure capable of achieving the foregoing object, comprising: a light-emitting die and two electrodes, the light-emitting die extending two wires respectively connected to the two electrodes; and the present invention mainly
  • One end of the light-emitting die is provided with an extended heat-dissipating structure, so that the heat-dissipating structure can fully derive the heat generated by the light-emitting die, and the heat can be further guided to the printed circuit board by the heat-dissipating device, and the original electrodeless copper of the printed circuit board is utilized.
  • the heat dissipation structure of the foil area or the underlying metal substrate is dissipated; in addition, in order to cooperate with the light-emitting diode process of the present invention, the heat dissipation structure and the two electrodes are provided with a support structure for fixing, so that the structure can be maintained during production. Positioning, for encapsulation, completes a single surface-adhesive LED structure that can be used.
  • the method for manufacturing the single surface-adhesive light-emitting diode first cuts the heat-dissipating structure and the excess area other than the two electrodes on the metal strip to form a basic shape; and then in the heat-dissipating structure and the two electrodes The plastic injection molding out of the supporting structure; then cutting off the other excess parts of the metal strip, and cutting off the joint between the heat dissipating structure and the two electrodes, so that each area becomes an independent individual; finally, the solid crystal, the wire is wound, and after encapsulation, The finished light-emitting diode structure is cut from the metal strip and the description of the drawing is completed.
  • FIG. 4 is a schematic view of the metal strip structure for cutting the excess portion in the first step of the present invention
  • FIG. 5 is a schematic view showing the support structure of the second step of the present invention.
  • Figure 6 is a structural view of the metal strip after cutting according to the third step of the present invention.
  • the single surface-adhesive light-emitting diode structure of the present invention is characterized by comprising a light-emitting die 1 , and the light-emitting die 1 is disposed on the heat dissipation structure 2 , and the heat dissipation structure 2 is disposed beside There are two electrodes 3, the illuminating crystal 1 extends two wires 4 respectively connected to the two electrodes 3, and the heat dissipating structure 2 and the two electrodes 3 are provided with a supporting structure 5 for fixing, and the foregoing devices are further
  • the package is packaged in a general light-emitting diode configuration to form a light-emitting diode structure that can be used. As shown in FIG.
  • the two electrodes 3 are in contact with the printed circuit board 6 for surface adhesion, and then electrically conductive to cause the light-emitting die 1 to start to emit light; and the heat dissipation structure 2 extends to other positions, which is effective.
  • the printed circuit board 6 Dissipating the heat generated by the illuminating die 1 or cooperating with other scatters, such as a predetermined heat dissipation measure on the surface of the printed circuit board 6, the printed circuit board 6 is provided with a through hole 161, the inner edge of the through hole 6 1
  • the heat dissipating material such as copper powder may be disposed, and the heat dissipating structure 2 is disposed adjacent to the through hole 61, and the heat may be transmitted to the outside of the printed circuit board 6 to be dissipated; the surface of the dispersing structure 2 is formed with a heat dissipating structure forming positioning hole 74.
  • the heat dissipation structure 2 is quasi- ⁇ - aligned with the bead perforation 61 to dissipate heat; since the heat dissipating structure 2 itself is not in contact with any of the electrodes, it is in a non-polar state and does not interfere with the use of other circuits during use.
  • the heat dissipation structure 2 can be bent into various shapes as needed to facilitate contact with other devices, or to change the heat dissipation space configuration to provide the most efficient heat dissipation result; or the heat dissipation structure 2 can change its area according to requirements. Through the increase of the heat dissipation area, a better guiding heat dissipation effect can be produced.
  • the present invention further develops a so-called single surface-adhesive light-emitting diode manufacturing method and related schematic diagram, wherein the heat-dissipating structure 2 and the two electrodes 3 are formed on a single metal strip 7. .
  • the detailed steps are as follows:
  • the heat dissipation structure 2 and the excess area 7 1 other than the two electrodes 3 are punched and cut on the metal strip 7 by a die to make the metal strip 7 Forming a basic shape of the electrode 3 and the heat dissipation structure 2;
  • Step 2 F ll uses a plastic injection molding method to project the support structure 5 in a range required for the structure of the light-emitting diode: the support structure 5 covers at least the range of the heat dissipation structure 2 and the two electrodes 3 ;
  • connection point 73 is cut off, and the packaged light-emitting diode structure is cut out from the metal strip 7, thereby completing the single surface-adhesive light-emitting diode structure of the present invention.
  • Figure 2 Please refer to Figure 2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne une diode électroluminescent de type montée en surface unique (DEL) et un procédé de fabrication de celle-ci. Cette DEL comprend principalement une puce (1), un dissipateur thermique (2), deux électrodes (3), des fils (4) et une structure de support (5). Une région excédentaire en dehors du dissipateur thermique (2) et des deux électrodes (3) sur la bande métallique (7) est d'abord découpée et écartée de façon à former une forme de base, une matière plastique est passée au jet afin de former la structure de support (5) à portée du dissipateur thermique et des deux électrodes, puis une autre partie éxcédentaire de la bande métallique est également découpée et écartée, de sorte que le dissipateur thermique et les deux électrodes deviennent une unité individuelle, puis une plaquette est montée et liée par des fils, et après la mise en boîtier, cette diode électroluminescente est descendue de la bande métallique, et ainsi cette diode électroluminescente est terminée.
PCT/CN2007/000627 2007-02-28 2007-02-28 Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci WO2008104096A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2007/000627 WO2008104096A1 (fr) 2007-02-28 2007-02-28 Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2007/000627 WO2008104096A1 (fr) 2007-02-28 2007-02-28 Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci

Publications (1)

Publication Number Publication Date
WO2008104096A1 true WO2008104096A1 (fr) 2008-09-04

Family

ID=39720834

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/000627 WO2008104096A1 (fr) 2007-02-28 2007-02-28 Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci

Country Status (1)

Country Link
WO (1) WO2008104096A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222997A (ja) * 2001-01-25 2002-08-09 Seiwa Electric Mfg Co Ltd 表面実装型発光ダイオード、及びその製造方法
JP2002314148A (ja) * 2001-04-13 2002-10-25 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
CN1442910A (zh) * 2002-03-06 2003-09-17 徐继兴 液冷式发光二极管及其封装方法
CN1444271A (zh) * 2002-03-11 2003-09-24 光磊科技股份有限公司 固态发光装置封装的散热构件及其制造方法
CN2788360Y (zh) * 2005-01-14 2006-06-14 周虎 连接式表面粘着型发光二极管结构
WO2007013774A1 (fr) * 2005-07-28 2007-02-01 Sailux, Inc. Structure de boitier de dispositif electroluminescent, procede de fabrication de structure de boitier de dispositif electroluminescent, et procede de fabrication de dispositif electroluminescent ayant une telle structure
EP1753036A2 (fr) * 2005-08-08 2007-02-14 Samsung Electronics Co., Ltd. Boîtier de diode électroluminescente et sa méthode de fabrication

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222997A (ja) * 2001-01-25 2002-08-09 Seiwa Electric Mfg Co Ltd 表面実装型発光ダイオード、及びその製造方法
JP2002314148A (ja) * 2001-04-13 2002-10-25 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
CN1442910A (zh) * 2002-03-06 2003-09-17 徐继兴 液冷式发光二极管及其封装方法
CN1444271A (zh) * 2002-03-11 2003-09-24 光磊科技股份有限公司 固态发光装置封装的散热构件及其制造方法
CN2788360Y (zh) * 2005-01-14 2006-06-14 周虎 连接式表面粘着型发光二极管结构
WO2007013774A1 (fr) * 2005-07-28 2007-02-01 Sailux, Inc. Structure de boitier de dispositif electroluminescent, procede de fabrication de structure de boitier de dispositif electroluminescent, et procede de fabrication de dispositif electroluminescent ayant une telle structure
EP1753036A2 (fr) * 2005-08-08 2007-02-14 Samsung Electronics Co., Ltd. Boîtier de diode électroluminescente et sa méthode de fabrication

Similar Documents

Publication Publication Date Title
JP4885908B2 (ja) 放熱の向上を伴う側面発光ｌｅｄパッケージ
JP5011494B2 (ja) 熱伝導／消散ユニット一体型半導体発光装置
JP4802304B2 (ja) 半導体発光モジュール、およびその製造方法
US20080191235A1 (en) Light emitting diode structure with high heat dissipation
JP2008293966A (ja) 発光ダイオードランプ
JP2004265986A (ja) 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法
JP4750821B2 (ja) 発光表示パネル
JP2000031546A (ja) Ｌｅｄ集合体モジュール
US20120241773A1 (en) Led bar module with good heat dissipation efficiency
US20110084612A1 (en) Hybrid chip-on-heatsink device and methods
KR100892224B1 (ko) 핀 타입형 파워 엘이디(ｌｅｄ) 방열구조
JP3770192B2 (ja) チップ型ｌｅｄ用リードフレーム
US20080135869A1 (en) Light emitting chip package and light source module
JP3938100B2 (ja) Ｌｅｄランプおよびｌｅｄ照明具
US20060071329A1 (en) Power led package
US20100044727A1 (en) Led package structure
WO2016197957A1 (fr) Châssis métallique de lampe à del
US20080220547A1 (en) Single-chip surface mounted led structure and a method for manufacturing the same
US20080220548A1 (en) Multi-chip surface mounted led structure and a method for manufacturing the same
WO2008104096A1 (fr) Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci
WO2008104103A1 (fr) Procédé de fabrication d'une pluralité de del smd et structure de del
JP2011159825A (ja) Ｌｅｄ照明用モジュール装置及びその製造方法
JP3186004U (ja) チップ未封止ｌｅｄ照明
CN101256964A (zh) 多颗表面黏着型发光二极管制造方法及其结构
TW201244056A (en) Light emitting diode module package structure

Legal Events

Date Code Title Description
DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07720277

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07720277

Country of ref document: EP

Kind code of ref document: A1