WO2007013774A1 - Structure de boitier de dispositif electroluminescent, procede de fabrication de structure de boitier de dispositif electroluminescent, et procede de fabrication de dispositif electroluminescent ayant une telle structure - Google Patents

Structure de boitier de dispositif electroluminescent, procede de fabrication de structure de boitier de dispositif electroluminescent, et procede de fabrication de dispositif electroluminescent ayant une telle structure Download PDF

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Publication number
WO2007013774A1
WO2007013774A1 PCT/KR2006/002970 KR2006002970W WO2007013774A1 WO 2007013774 A1 WO2007013774 A1 WO 2007013774A1 KR 2006002970 W KR2006002970 W KR 2006002970W WO 2007013774 A1 WO2007013774 A1 WO 2007013774A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
leads
dissipating
light emitting
auxiliary
Prior art date
Application number
PCT/KR2006/002970
Other languages
English (en)
Inventor
Byoung Jae Park
Yong Ho Jung
Jin Yeol Yoo
Original Assignee
Sailux, Inc.
Gold Mountain Electronics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sailux, Inc., Gold Mountain Electronics Co., Ltd. filed Critical Sailux, Inc.
Publication of WO2007013774A1 publication Critical patent/WO2007013774A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Definitions

  • the present invention relates to a light emitting device package structure, a method of manufacturing the light emitting device package structure, and a method of manufacturing a light emitting device adopting the same, and more particularly, to a light emitting device package structure which can be easily manufactured and has a heat- dissipating structure suitable for high-output applications, a method of manufacturing the light emitting device package structure, and a method of manufacturing a light emitting device adopting the same.
  • a conventional LED is constructed such that a plate-shaped lead frame has an LED chip mounted thereon. Since heat dissipation is made through the lead frame, the conventional LED has poor heat-dissipation capability and is thus difficult to apply to high-output applications.
  • the present invention provides a light emitting device package structure that is easy to manufacture while improving heat-dissipation capability, a method of manufacturing the light emitting device package structure, and a method of manufacturing a light emitting device adopting the same.
  • a light emitting device package structure comprising: first and second plate-shaped auxiliary support pieces each having a first thickness; a heat-dissipating portion used to mount a light emitting device chip and formed upwardly higher than the first and second auxiliary support pieces at the center of the first and second auxiliary support pieces; a plurality of auxiliary leads having the same thicknesses as the auxiliary support pieces, connected between each of the auxiliary support pieces and a side surface of the heat- dissipating portion, and each having a first bent portion formed therebetween; and main leads having the same thicknesses as the auxiliary support pieces, extending in parallel with the auxiliary leads to be spaced apart from the heat-dissipating portion, the main leads each having a second bent portion that is extended from the auxiliary support pieces toward the heat-dissipating portion, wherein the heat-dissipating portion, the auxiliary support pieces and the main leads are integrally formed of a conductive metallic material
  • the bottom surface of the heat-dissipating portion and the bottom surface of the auxiliary support pieces are parallel with each other, and the second bent portion is constructed to have a vertical portion and a second horizontal portion, the vertical portion being bent to a predetermined length upward at an end of a first horizontal portion that is extended by predetermined distance from each of the auxiliary support pieces toward the heat-dissipating portion, and the second horizontal portion being horizontally bent from the top end of the vertical portion toward the heat- dissipating portion.
  • the light emitting device package structure may further comprise a chip mounting portion whose inner diameter gradually decreases toward a lower position at the center of the heat-dissipating portion to mount the LED chip.
  • the light emitting device package structure further comprises a molding cap including portions of the auxiliary leads and the main leads in view of the heat-dissipating portion, the molding cap formed through molding such that the bottom surface of the heat-dissipating portion, the top surface of the second horizontal portion of each of the main leads, the chip mounting portion, and the bottom surface of the first horizontal portion are exposed outside.
  • a method of manufacturing a light emitting device package structure comprising: forming auxiliary leads and main leads by performing a perforating process on a base frame having a base portion with a first thickness and a heat-dissipating portion formed a predetermined length higher than the base portion at the center of the base portion, the perforating process performed on the base portion of the base frame, the auxiliary leads connected between either end of the base portion and the heat-dissipating portion, and the main leads each having one end isolated from the heat-dissipating portion and the other end connected to the end of the base portion; and forming a first bent portion and a second bent portion, the first bent portion formed by bending the auxiliary leads upwardly by a predetermined length so as to protrude in a height length of the heat-dissipating portion, and the second bent portion formed such that there are provided a vertical portion formed by bending the main leads upwardly at a position space
  • the method may further comprise forming a molding cap including a portion of the heat-dissipating portion and portions of the auxiliary leads, the molding cap formed through molding such that the second horizontal portion, and the chip mounting portion are exposed outside, and forming cutting the main leads and the auxiliary leads exposed outside from the molding cap.
  • a method of manufacturing a light emitting device comprising: forming auxiliary leads and main leads by performing a perforating process on a base frame having a base portion with a first thickness and a heat-dissipating portion formed a predetermined length higher than the base portion at the center of the base portion, the heat-dissipating portion having a chip mounting portion formed at the center of its top surface, the perforating process performed on the base portion of the base frame, the auxiliary leads connected between either end of the base portion and the heat- dissipating portion, and the main leads each having one end isolated from the heat- dissipating portion and the other end connected to the end of the base portion; forming a first bent portion and a second bent portion, the first bent portion formed by bending the auxiliary leads upwardly by a predetermined length so as to protrude in a height length of the heat-dissipating portion, and the second bent portion formed such that
  • a method of manufacturing a light emitting device comprising: forming auxiliary leads and main leads by performing a perforating process on a base frame having a base portion with a first thickness and a heat-dissipating portion formed a predetermined length higher than the base portion at the center of the base portion, the heat- dissipating portion having a chip mounting portion formed at the center of its top surface, the perforating process performed on the base portion of the base frame, the auxiliary leads connected between either end of the base portion and the heat- dissipating portion, and the main leads each having one end isolated from the heat- dissipating portion and the other end connected to the end of the base portion; forming a first bent portion and a second bent portion, the first bent portion formed by bending the auxiliary leads upwardly by a predetermined length so as to protrude in a height length of the heat-dissipating portion, and the second bent portion formed such that
  • FIG. 1 is a perspective view of a light emitting device package structure according to an embodiment of the present invention
  • FIG. 2 is a perspective view of a base frame for forming the light emitting device package structure shown in FIG. 1
  • FIG. 3 is a plan view of a structure resulting after primarily processing the base frame shown in FIG. 2
  • FIG. 4 is a perspective view of a light emitting device according to an embodiment of the present invention, to which a molding cap as a modified example of the light emitting device package structure of FIG. 1 is applied
  • FIG. 5 is a perspective view illustrating a state in which an LED chip is mounted on a light emitting device package structure according to the present invention.
  • FlG. 6 is a perspective view illustrating a state in which a molding cap is formed on the light emitting device package structure of FlG. 1 and a lead is then cut.
  • FlG. 1 is a perspective view of a light emitting device package structure according to an embodiment of the present invention.
  • a light emitting device package structure 100 includes a heat- dissipating portion 110, auxiliary support pieces 121a and 121b, main leads 131a and 131b, and auxiliary leads 141a and 141b.
  • the heat-dissipating portion 110 is formed of a substantially rectangular shape and has a chip mounting portion 111 whose inner diameter gradually decreases toward a lower position at a center of the heat-dissipating portion 110.
  • the chip mounting portion 111 is used as an area where the LED chip is mounted.
  • a thickness of the heat-dissipating portion 110 is greater than that of the auxiliary support piece 121a, 121b and determined in consideration of heat-dissipation capability of an LED chip to which the heat-dissipating portion 110 is to be applied to.
  • the auxiliary support piece 121a, 121b has a thickness e.g., a first thickness.
  • auxiliary support pieces i.e., a first and a second auxiliary support pieces
  • auxiliary leads 141a and 141b are spaced a predetermined distance apart from the left and right side of the heat-dissipating portion 110 to support the auxiliary leads 141a and 141b and the main leads 131a and 131b.
  • the first and second auxiliary support pieces 121a and 121b are removed together with some of the main leads 131a and 131b and the auxiliary leads 141a and 141b after forming a molding cap 310, which will later be described.
  • the auxiliary leads 141a and 141b have the same thicknesses as the auxiliary support pieces 121a and 121b and connected between each of the auxiliary support pieces 121a and 121b and the heat-dissipating portion 110 in a strip shape.
  • the auxiliary leads 141a and 141b have a first bent portion 142 formed therebetween to a predetermined length upward.
  • the first bent portion 142 of the auxiliary leads 141a and 141b adjusts a gap between a second horizontal portion 134 of each of the main leads 131a and 131b and the heat-dissipating portion 110, which will later be described later.
  • the main leads 131a and 131b have the same thicknesses as the auxiliary support pieces 121a and 121b.
  • the main leads 131a and 131b are spaced apart from the auxiliary leads 141a and
  • the second bent portion has a vertical portion 133 that is bent to a predetermined length upward at an end of a first horizontal portion 132 that is extended by predetermined distance from each of the auxiliary support pieces 121a and 121b toward the heat-dissipating portion 110, and the second horizontal portion 134 that is horizontally bent from the top end of the vertical portion 133 toward the heat-dissipating portion 110.
  • the top surface of the second horizontal portion 134 is used for facilitating wire-bonding and the first horizontal portion 132 or the bottom surface is used for electrical connection with external circuitry.
  • the aforementioned light emitting device package structure 100 is preferably coated with a material having high reflectivity.
  • the light emitting device package structure 100 is formed of is primarily coated with a nickel (Ni) and then secondarily coated with silver on the nickel-coated layer, thereby forming a multi- coated layer.
  • the base frame 101 has a base portion 120 with a first thickness and a heat- dissipating portion 110 formed a predetermined length higher than the base portion 120 at the center of the base portion 120.
  • the base frame 101 which has a hat-like shape, may be formed by rolling, roll forming or extruding.
  • the base frame 101 is made of a material having superior heat and electric conductivity, e.g., copper or a copper alloy.
  • a perforating process is performed on the base frame 101 to form the above-described auxiliary support pieces 121a and 121b, the main leads 131a and 131b, and the auxiliary leads 141a and 141b. That is to say, the perforating process is performed so that an auxiliary lead formation slot 103 and a main lead isolation groove 104 are formed through the base frame 101. Then, the chip mounting portion 111 is formed at the center of the heat-dissipating portion 110.
  • the perforated base frame 101 is constructed to have a structure shown in FlG. 1 by bending the auxiliary leads 141a and 141b and the main leads 131a and 131b. That is to say, the auxiliary leads 141a and 141b are bent such that they protrude by a predetermined length in a height direction of the heat- dissipating portion 110.
  • ends of the main leads 131a and 131b adjacent to the heat-dissipating portion 110 are bent such that there are provided a vertical portion 133 extending upwardly and a second horizontal portion 134 extending from an upper end of the first vertical portion 133 horizontally toward the heat-dissipating portion 110.
  • each of the auxiliary leads 141a and 141b has a first bent portion 142 to an appropriate height with respect to the top surface of the heat-dissipating portion 110.
  • plating treatment is performed.
  • a portion subjected to the plating treatment may include at least the chip mounting portion 111, and the main leads 131a and 131b.
  • the overall light emitting device package structure 100 formed of a metallic material, other than the molding cap, may be subjected to the plating treatment.
  • the light emitting device package structure 100 is primarily plated with nickel (Ni) and then secondarily plated with silver (Ag). In an alternative embodiment, the light emitting device package structure 100 may be plated only with nickel or silver.
  • a portion indicated by a dotted line shown in FIG. 1 is molded using a resin to form the molding cap 310, the auxiliary leads 141a and 141b and the main leads 131a and 131b, which are exposed outside from the molding cap 310, are cut in an appropriate length, thereby completing the light emitting device, which will now be described in more detail.
  • a LED chip (not shown) is mounted on the chip mounting portion
  • 111 and the second horizontal portion 134 and the LED chip are wire-bonded, followed by molding using a transparent resin such that the portion indicated by a dotted line shown in FIG. 1 forms an outline and cutting the auxiliary leads 141a and 141b and the main leads 131a and 131b.
  • the molding cap 310 formed by molding may have a planar top surface.
  • a molding cap 330 may be provided, the molding cap 330 including a lens 332 having a convexly projecting portion corresponding to the chip mounting portion 111.
  • the molding caps 310 and 330 may be formed a predetermined length higher than the heat-dissipating portion 110 from the top surface of a base portion (120 of FlG. 2), so that the bottoms of the main leads 131a and 131b and the heat-dissipating portion 110 are exposed outside.
  • auxiliary leads 141a and 141b are cut so as to protrude from the molding cap 330
  • the invention is not limited thereto and the auxiliary leads 141a and 141b may be cut so as not to protrude from the molding cap 330.
  • a molding cap 340 having a receiving groove 342 is formed by molding such that a portion including the second horizontal portion 134 of each of the main leads 131a and 131b and the chip mounting portion 111 is exposed.
  • a LED chip 400 is mounted on the chip mounting portion 111 and the second horizontal portion 134 of each of the main leads 131a and 131b and the LED chip 400 are wire-bonded to each other.
  • the molding cap 340 is preferably made of a white resin.
  • the LED chip 400 is hermetically sealed by filling the receiving groove 342 of the molding cap 340 with a transparent material or additionally providing a lens-shaped auxiliary cap (not shown). Before or after forming the auxiliary cap, the main leads 131a and 131b and the auxiliary leads 141a and 141b are cut.
  • the fluorescent substance is applied to the LED chip to surround the same and the receiving groove 342 of the molding cap 340 is then filled with the auxiliary cap made of a transparent resin.
  • Reference numeral 345 denotes a marking chamfer portion for indicating polarity of each of the main leads 131a and 131b.
  • the main leads 131a and 131b and the auxiliary leads 141a and 141b are first cut, followed by chip mounting and forming the auxiliary cap.
  • a metal plate whose central part is thicker than its peripheral part is integrally formed with a heat-dissipating portion through perforating or bending, followed by molding and cutting process to form connection leads thereby facilitating and simplifying the manufacturing process.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention a trait à une structure de boîtier de dispositif électroluminescent, à un procédé de fabrication de structure de boîtier de dispositif électroluminescent, et à un procédé de fabrication de dispositif électroluminescent ayant une telle structure. La structure de boîtier de dispositif électroluminescent comporte des première et deuxième pièces de support auxiliaires en forme de plaque chacune ayant une première épaisseur; une portion de dissipation de chaleur utilisée pour le montage d'une puce de dispositif électroluminescent et formée plus haut que les première et deuxième pièces de support auxiliaires au centre des première et deuxième pièces de support auxiliaires; une pluralité de fils de connexion ayant les mêmes épaisseurs que les pièces de support auxiliaires, reliés entre chacune des pièces de support auxiliaires et une face latérale de la portion de dissipation de chaleur, et ayant chacun une première portion coudée interposée; et des fils de connexion principaux ayant les mêmes épaisseurs que les pièces de support auxiliaires, s'étendant en parallèle avec les fils de connexion auxiliaires pour être espacés de la portion de dissipation de chaleur, les fils de connexion principaux ayant chacun une deuxième portion coudée qui s'étend depuis les pièces de support auxiliaires vers la portion de dissipation de chaleur, ladite portion de dissipation de chaleur, lesdites pièces de support auxiliaires et lesdits fils de connexion principaux étant réalisés intégralement en un matériau conducteur. Selon la structure de boîtier de dispositif électroluminescent et son procédé de fabrication, une plaque métallique dont la partie centrale est plus épaisse que la partie périphérique est intégralement formée avec la portion de dissipation de chaleur par perforation ou flexion, suivie de moulage et de procédé de découpe pour former les fils de connexion facilitant et simplifiant ainsi le procédé de fabrication.
PCT/KR2006/002970 2005-07-28 2006-07-28 Structure de boitier de dispositif electroluminescent, procede de fabrication de structure de boitier de dispositif electroluminescent, et procede de fabrication de dispositif electroluminescent ayant une telle structure WO2007013774A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0069100 2005-07-28
KR1020050069100A KR100628987B1 (ko) 2005-07-28 2005-07-28 발광소자 패키지 구조체와 그 제조방법 및 이를 적용한발광소자의 제조방법

Publications (1)

Publication Number Publication Date
WO2007013774A1 true WO2007013774A1 (fr) 2007-02-01

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KR (1) KR100628987B1 (fr)
WO (1) WO2007013774A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008104096A1 (fr) * 2007-02-28 2008-09-04 Tsungwen Chan Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci
CN102593339A (zh) * 2012-02-23 2012-07-18 日月光半导体制造股份有限公司 芯片构装
WO2016197961A1 (fr) * 2015-06-11 2016-12-15 吴少健 Structure d'encapsulation de lampe à del

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100992598B1 (ko) 2008-09-03 2010-11-08 산일테크(주) 리드프레임 및 이의 제조방법과 이를 포함하는 엘이디 발광소자
KR101129585B1 (ko) 2010-04-08 2012-03-28 우리엘이디 주식회사 발광 장치
KR101524043B1 (ko) * 2013-10-28 2015-05-29 주식회사 루멘스 발광 소자용 리드 프레임과, 발광 소자 패키지와, 백라이트 유닛 및 조명 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035156A (ko) * 1998-11-05 2000-06-26 디. 크레이그 노룬드 다이용 패키지
JP2004221598A (ja) * 2003-01-16 2004-08-05 Lumileds Lighting Us Llc Ｌｅｄアセンブリの正確なアラインメント
JP2004228387A (ja) * 2003-01-23 2004-08-12 Koha Co Ltd 発光装置
JP2005183993A (ja) * 2003-12-19 2005-07-07 Lumileds Lighting Us Llc Ｌｅｄパッケージ組立体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035156A (ko) * 1998-11-05 2000-06-26 디. 크레이그 노룬드 다이용 패키지
JP2004221598A (ja) * 2003-01-16 2004-08-05 Lumileds Lighting Us Llc Ｌｅｄアセンブリの正確なアラインメント
JP2004228387A (ja) * 2003-01-23 2004-08-12 Koha Co Ltd 発光装置
JP2005183993A (ja) * 2003-12-19 2005-07-07 Lumileds Lighting Us Llc Ｌｅｄパッケージ組立体

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008104096A1 (fr) * 2007-02-28 2008-09-04 Tsungwen Chan Diode électroluminescentes de type montée en surface de signal et procédé de fabrication de celle-ci
CN102593339A (zh) * 2012-02-23 2012-07-18 日月光半导体制造股份有限公司 芯片构装
WO2016197961A1 (fr) * 2015-06-11 2016-12-15 吴少健 Structure d'encapsulation de lampe à del

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Publication number Publication date
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