WO2008102630A1 - 赤外光検出器 - Google Patents

赤外光検出器 Download PDF

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Publication number
WO2008102630A1
WO2008102630A1 PCT/JP2008/051679 JP2008051679W WO2008102630A1 WO 2008102630 A1 WO2008102630 A1 WO 2008102630A1 JP 2008051679 W JP2008051679 W JP 2008051679W WO 2008102630 A1 WO2008102630 A1 WO 2008102630A1
Authority
WO
WIPO (PCT)
Prior art keywords
infrared light
status
light detector
electronic layer
saturation
Prior art date
Application number
PCT/JP2008/051679
Other languages
English (en)
French (fr)
Inventor
Susumu Komiyama
Zhenghua An
Takeji Ueda
Original Assignee
Japan Science And Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science And Technology Agency filed Critical Japan Science And Technology Agency
Priority to US12/527,614 priority Critical patent/US8304731B2/en
Publication of WO2008102630A1 publication Critical patent/WO2008102630A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

【課題】赤外光への感度のさらなる向上を図りうる赤外光検出器を提供する。 【解決手段】赤外光検出器１００によれば、第１電子層１０２の孤立領域１０の「遮断状態」および「接続状態」が切り替えられる。接続状態の実現により、遮断状態における孤立領域１０の帯電量の飽和ひいては第２電子層１０４の電気伝導率の変化量の飽和が解消されうる。したがって、第２電子層１０４の電気伝導率の変化量が時間積分されることにより赤外光の感度のさらなる向上が図られる。
PCT/JP2008/051679 2007-02-19 2008-02-01 赤外光検出器 WO2008102630A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/527,614 US8304731B2 (en) 2007-02-19 2008-02-01 Infrared light detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007038176A JP5240748B2 (ja) 2007-02-19 2007-02-19 赤外光検出器
JP2007-038176 2007-02-19

Publications (1)

Publication Number Publication Date
WO2008102630A1 true WO2008102630A1 (ja) 2008-08-28

Family

ID=39709909

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051679 WO2008102630A1 (ja) 2007-02-19 2008-02-01 赤外光検出器

Country Status (3)

Country Link
US (1) US8304731B2 (ja)
JP (1) JP5240748B2 (ja)
WO (1) WO2008102630A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010137422A1 (ja) * 2009-05-25 2010-12-02 独立行政法人科学技術振興機構 赤外光検出器
WO2010137423A1 (ja) * 2009-05-25 2010-12-02 独立行政法人科学技術振興機構 赤外光検出器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202332072A (zh) * 2022-01-19 2023-08-01 友達光電股份有限公司 感測裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006572A1 (fr) * 1999-07-15 2001-01-25 Japan Science And Technology Corporation Detecteur d'onde millimetrique et d'infrarouge lointain
JP2001060699A (ja) * 1999-08-19 2001-03-06 Hitachi Ltd 光検出器
WO2006006469A1 (ja) * 2004-07-09 2006-01-19 Japan Science And Technology Agency 赤外光検出器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114017A (ja) 1995-10-16 1999-01-06 Toshiba Corp 光学装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006572A1 (fr) * 1999-07-15 2001-01-25 Japan Science And Technology Corporation Detecteur d'onde millimetrique et d'infrarouge lointain
JP2001060699A (ja) * 1999-08-19 2001-03-06 Hitachi Ltd 光検出器
WO2006006469A1 (ja) * 2004-07-09 2006-01-19 Japan Science And Technology Agency 赤外光検出器

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
AN Z. ET AL.: "A sensitive double quantum well infrared phototransistor", JOURNAL OF APPLIED PHYSICS, vol. 100, 2006, pages 044509-1 - 044509-7, XP012089824 *
AN Z. ET AL.: "Metastable excited states of a closed quantum dot with high sensitivity to infrared photons", PHYS. REV. B., vol. 75, 12 February 2007 (2007-02-12), pages 085417 *
AN Z. ET AL.: "Reset Operation of Quantum-Well Infrared Phototransistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 54, no. 7, July 2007 (2007-07-01), pages 1776 - 1780, XP011186192 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010137422A1 (ja) * 2009-05-25 2010-12-02 独立行政法人科学技術振興機構 赤外光検出器
JP2010272794A (ja) * 2009-05-25 2010-12-02 Japan Science & Technology Agency 赤外光検出器
WO2010137423A1 (ja) * 2009-05-25 2010-12-02 独立行政法人科学技術振興機構 赤外光検出器
EP2426739A1 (en) * 2009-05-25 2012-03-07 Japan Science and Technology Agency Infrared sensor
EP2426739A4 (en) * 2009-05-25 2012-07-18 Japan Science & Tech Agency INFRARED SENSOR
JPWO2010137423A1 (ja) * 2009-05-25 2012-11-12 独立行政法人科学技術振興機構 赤外光検出器
US8395142B2 (en) 2009-05-25 2013-03-12 Japan Science And Technology Agency Infrared light detector

Also Published As

Publication number Publication date
JP5240748B2 (ja) 2013-07-17
US20100116989A1 (en) 2010-05-13
US8304731B2 (en) 2012-11-06
JP2008205106A (ja) 2008-09-04

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