WO2008099852A1 - ＧａＮ系半導体素子 - Google Patents

ＧａＮ系半導体素子 Download PDF

Info

Publication number
WO2008099852A1
WO2008099852A1 PCT/JP2008/052355 JP2008052355W WO2008099852A1 WO 2008099852 A1 WO2008099852 A1 WO 2008099852A1 JP 2008052355 W JP2008052355 W JP 2008052355W WO 2008099852 A1 WO2008099852 A1 WO 2008099852A1
Authority
WO
WIPO (PCT)
Prior art keywords
gan
layer
insulating film
over
semiconductor surface
Prior art date
Application number
PCT/JP2008/052355
Other languages
English (en)
French (fr)
Inventor
Hirotaka Otake
Hiroaki Ohta
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2008099852A1 publication Critical patent/WO2008099852A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

【課題】表面準位が形成されている素子であっても、表面準位を安定化させて、表面リークを抑制し、高周波動作の応答性も向上させたＧａＮ系半導体素子を提供する。 サファイア基板１上にＧａＮバッファ層２、アンドープＧａＮ層３、ｎ型ＧａＮドレイン層４、ｐ型ＧａＮチャネル層５が積層されており、ｐ型ＧａＮチャネル層５の上には、ｎ型ＧａＮソース層６が形成されている。リッジ部Ａ側面の傾斜面にゲート絶縁膜７が形成され、ゲート絶縁膜７上に積層されている。ドレイン電極１０とソース電極９が形成された半導体表面及びゲート絶縁膜７で被覆されている半導体表面とを除く露出した半導体表面に、その露出した半導体表面がすべて覆われるように絶縁膜１１が形成される。
PCT/JP2008/052355 2007-02-13 2008-02-13 ＧａＮ系半導体素子 WO2008099852A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-032323 2007-02-13
JP2007032323A JP2008198787A (ja) 2007-02-13 2007-02-13 ＧａＮ系半導体素子

Publications (1)

Publication Number Publication Date
WO2008099852A1 true WO2008099852A1 (ja) 2008-08-21

Family

ID=39690080

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052355 WO2008099852A1 (ja) 2007-02-13 2008-02-13 ＧａＮ系半導体素子

Country Status (2)

Country Link
JP (1) JP2008198787A (ja)
WO (1) WO2008099852A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10236373B2 (en) 2016-07-19 2019-03-19 Toyoda Gosei Co., Ltd. Semiconductor device and production method therefor
US11670696B2 (en) 2020-06-04 2023-06-06 Toyoda Gosei Co., Ltd. Semiconductor device and production method therefor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101018239B1 (ko) * 2008-11-07 2011-03-03 삼성엘이디 주식회사 질화물계 이종접합 전계효과 트랜지스터
US8525221B2 (en) * 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
JP6241100B2 (ja) 2013-07-17 2017-12-06 豊田合成株式会社 Ｍｏｓｆｅｔ
JP6197427B2 (ja) 2013-07-17 2017-09-20 豊田合成株式会社 ショットキーバリアダイオード

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308196A (ja) * 2000-04-25 2001-11-02 Furukawa Electric Co Ltd:The 絶縁ゲート型半導体装置
JP2004260140A (ja) * 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Ｉｉｉ族窒化物半導体を有する半導体素子
JP2005183597A (ja) * 2003-12-18 2005-07-07 Nec Corp 窒化物半導体ｍｉｓ型電界効果トランジスタ
JP2005527102A (ja) * 2001-07-24 2005-09-08 クリー　インコーポレイテッド 高電子移動度トランジスタ及びその製造方法
JP2006245317A (ja) * 2005-03-03 2006-09-14 Fujitsu Ltd 半導体装置およびその製造方法
JP2006303543A (ja) * 1999-05-21 2006-11-02 Kansai Electric Power Co Inc:The 半導体装置
JP2006339561A (ja) * 2005-06-06 2006-12-14 Matsushita Electric Ind Co Ltd 電界効果トランジスタ及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303543A (ja) * 1999-05-21 2006-11-02 Kansai Electric Power Co Inc:The 半導体装置
JP2001308196A (ja) * 2000-04-25 2001-11-02 Furukawa Electric Co Ltd:The 絶縁ゲート型半導体装置
JP2005527102A (ja) * 2001-07-24 2005-09-08 クリー　インコーポレイテッド 高電子移動度トランジスタ及びその製造方法
JP2004260140A (ja) * 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Ｉｉｉ族窒化物半導体を有する半導体素子
JP2005183597A (ja) * 2003-12-18 2005-07-07 Nec Corp 窒化物半導体ｍｉｓ型電界効果トランジスタ
JP2006245317A (ja) * 2005-03-03 2006-09-14 Fujitsu Ltd 半導体装置およびその製造方法
JP2006339561A (ja) * 2005-06-06 2006-12-14 Matsushita Electric Ind Co Ltd 電界効果トランジスタ及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10236373B2 (en) 2016-07-19 2019-03-19 Toyoda Gosei Co., Ltd. Semiconductor device and production method therefor
US11670696B2 (en) 2020-06-04 2023-06-06 Toyoda Gosei Co., Ltd. Semiconductor device and production method therefor

Also Published As

Publication number Publication date
JP2008198787A (ja) 2008-08-28

Similar Documents

Publication Publication Date Title
WO2006072575A3 (en) Ldmos transistor
WO2007146734A3 (en) Self aligned gate jfet structure and method
EP3614442A3 (en) Semiconductor device having oxide semiconductor layer and manufactoring method thereof
TW200715562A (en) Thin film transistor substrate and fabrication thereof
EP1843390A4 (en) SEMICONDUCTOR COMPONENT WITH MIS STRUCTURE AND METHOD OF MANUFACTURING THE SAME
TW200731530A (en) Semiconductor devices and methods for fabricating the same
WO2007147102A3 (en) High voltage ldmos
JP2006286910A5 (ja)
WO2010036942A3 (en) Power mosfet having a strained channel in a semiconductor heterostructure on metal substrate
WO2008105077A1 (ja) 化合物半導体装置とその製造方法
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
EP2084750A1 (en) Semiconductor device and its drive method
WO2008099528A1 (ja) 表示装置、表示装置の製造方法
TW200633125A (en) Semiconductor device and method of semiconductor device
EP1662558A4 (en) FIELD EFFECT TRANSISTOR AND PROCESS FOR MANUFACTURING
TW200717869A (en) Gallium nitride-based compound semiconductor light-emitting device
TW200731509A (en) Semiconductor device and manufacturing method thereof
JP2011077509A5 (ja) トランジスタ
WO2008099852A1 (ja) ＧａＮ系半導体素子
TW200743213A (en) Muti-channel thin film transistor
TW200644248A (en) Semiconductor device and manufacturing method thereof
WO2008105378A1 (ja) Iii族窒化物半導体電界効果トランジスタ
WO2008096521A1 (ja) 半導体装置
WO2008142873A1 (ja) 半導体装置及びその製造方法
WO2006080413A3 (en) Semiconductor devices

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08711213

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08711213

Country of ref document: EP

Kind code of ref document: A1