WO2008098350A1 - Non-volatile semiconductor memory having multiple external power supplies - Google Patents
Non-volatile semiconductor memory having multiple external power supplies Download PDFInfo
- Publication number
- WO2008098350A1 WO2008098350A1 PCT/CA2008/000256 CA2008000256W WO2008098350A1 WO 2008098350 A1 WO2008098350 A1 WO 2008098350A1 CA 2008000256 W CA2008000256 W CA 2008000256W WO 2008098350 A1 WO2008098350 A1 WO 2008098350A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voltage
- memory
- flash memory
- memory device
- power
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20184596.3A EP3790009A1 (en) | 2007-02-16 | 2008-02-12 | Non-volatile semiconductor memory having multiple external power supplies |
CA2675561A CA2675561C (en) | 2007-02-16 | 2008-02-12 | Non-volatile semiconductor memory having multiple external power supplies |
JP2009549344A JP2010518544A (en) | 2007-02-16 | 2008-02-12 | Nonvolatile semiconductor memory having multiple external power supply units |
EP08714579A EP2122629A4 (en) | 2007-02-16 | 2008-02-12 | Non-volatile semiconductor memory having multiple external power supplies |
CN200880005233.3A CN101617371B (en) | 2007-02-16 | 2008-02-12 | Non-volatile semiconductor memory having multiple external power supplies |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US90200307P | 2007-02-16 | 2007-02-16 | |
US60/902,003 | 2007-02-16 | ||
US94999307P | 2007-07-16 | 2007-07-16 | |
US60/949,993 | 2007-07-16 | ||
US11/955,754 | 2007-12-13 | ||
US11/955,754 US7639540B2 (en) | 2007-02-16 | 2007-12-13 | Non-volatile semiconductor memory having multiple external power supplies |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008098350A1 true WO2008098350A1 (en) | 2008-08-21 |
Family
ID=39689582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CA2008/000256 WO2008098350A1 (en) | 2007-02-16 | 2008-02-12 | Non-volatile semiconductor memory having multiple external power supplies |
Country Status (9)
Country | Link |
---|---|
US (10) | US7639540B2 (en) |
EP (2) | EP2122629A4 (en) |
JP (3) | JP2010518544A (en) |
KR (2) | KR101266206B1 (en) |
CN (1) | CN103903647B (en) |
CA (1) | CA2675561C (en) |
HK (1) | HK1199139A1 (en) |
TW (2) | TWI543164B (en) |
WO (1) | WO2008098350A1 (en) |
Cited By (2)
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JP2010040076A (en) * | 2008-08-01 | 2010-02-18 | Toshiba Corp | Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system |
KR101612111B1 (en) | 2009-04-27 | 2016-04-14 | 삼성전자주식회사 | Data storage device comprising a current detector |
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US7898851B2 (en) * | 2007-12-19 | 2011-03-01 | Kabushiki Kaisha Toshiba | Semiconductor memory device which includes memory cell having charge accumulation layer and control gate |
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