WO2008096752A1 - Etching method and recording medium - Google Patents
Etching method and recording medium Download PDFInfo
- Publication number
- WO2008096752A1 WO2008096752A1 PCT/JP2008/051862 JP2008051862W WO2008096752A1 WO 2008096752 A1 WO2008096752 A1 WO 2008096752A1 JP 2008051862 W JP2008051862 W JP 2008051862W WO 2008096752 A1 WO2008096752 A1 WO 2008096752A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etching method
- recording medium
- plasma
- fluorine
- etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/526,471 US8383519B2 (en) | 2007-02-09 | 2008-02-05 | Etching method and recording medium |
CN2008800044252A CN101606234B (en) | 2007-02-09 | 2008-02-05 | Etching method and recording medium |
KR1020097014154A KR101179111B1 (en) | 2007-02-09 | 2008-02-05 | Etching method and recording medium |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007031162 | 2007-02-09 | ||
JP2007-031162 | 2007-02-09 | ||
JP2007-123820 | 2007-05-08 | ||
JP2007123820A JP4919871B2 (en) | 2007-02-09 | 2007-05-08 | Etching method, semiconductor device manufacturing method, and storage medium |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008096752A1 true WO2008096752A1 (en) | 2008-08-14 |
Family
ID=39681661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/051862 WO2008096752A1 (en) | 2007-02-09 | 2008-02-05 | Etching method and recording medium |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101179111B1 (en) |
WO (1) | WO2008096752A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011023449A (en) * | 2009-07-14 | 2011-02-03 | Renesas Electronics Corp | Semiconductor device |
WO2015069613A1 (en) * | 2013-11-06 | 2015-05-14 | Mattson Technology, Inc. | Novel mask removal process strategy for vertical nand device |
CN114645281A (en) * | 2022-04-06 | 2022-06-21 | 岭南师范学院 | Method for removing carbon film on surface of metal workpiece |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6817692B2 (en) * | 2015-08-27 | 2021-01-20 | 東京エレクトロン株式会社 | Plasma processing method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0467655A (en) * | 1990-07-09 | 1992-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JP2004530287A (en) * | 2000-12-26 | 2004-09-30 | ハネウェル・インターナショナル・インコーポレーテッド | Method for eliminating the reaction between photoresist and OSG |
JP2005123406A (en) * | 2003-10-16 | 2005-05-12 | Tokyo Electron Ltd | Plasma etching method |
JP2005223360A (en) * | 1999-03-09 | 2005-08-18 | Tokyo Electron Ltd | Manufacturing method of semiconductor device |
JP2006302924A (en) * | 2005-04-15 | 2006-11-02 | Hitachi High-Technologies Corp | Plasma treatment method and plasma treating apparatus |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3683570B2 (en) * | 2003-02-19 | 2005-08-17 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
JP4715207B2 (en) * | 2004-01-13 | 2011-07-06 | 東京エレクトロン株式会社 | Semiconductor device manufacturing method and film forming system |
-
2008
- 2008-02-05 KR KR1020097014154A patent/KR101179111B1/en not_active IP Right Cessation
- 2008-02-05 WO PCT/JP2008/051862 patent/WO2008096752A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0467655A (en) * | 1990-07-09 | 1992-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JP2005223360A (en) * | 1999-03-09 | 2005-08-18 | Tokyo Electron Ltd | Manufacturing method of semiconductor device |
JP2004530287A (en) * | 2000-12-26 | 2004-09-30 | ハネウェル・インターナショナル・インコーポレーテッド | Method for eliminating the reaction between photoresist and OSG |
JP2005123406A (en) * | 2003-10-16 | 2005-05-12 | Tokyo Electron Ltd | Plasma etching method |
JP2006302924A (en) * | 2005-04-15 | 2006-11-02 | Hitachi High-Technologies Corp | Plasma treatment method and plasma treating apparatus |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011023449A (en) * | 2009-07-14 | 2011-02-03 | Renesas Electronics Corp | Semiconductor device |
WO2015069613A1 (en) * | 2013-11-06 | 2015-05-14 | Mattson Technology, Inc. | Novel mask removal process strategy for vertical nand device |
JP2016517179A (en) * | 2013-11-06 | 2016-06-09 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | Novel mask removal method for vertical NAND devices |
CN114645281A (en) * | 2022-04-06 | 2022-06-21 | 岭南师范学院 | Method for removing carbon film on surface of metal workpiece |
CN114645281B (en) * | 2022-04-06 | 2023-11-24 | 岭南师范学院 | Method for removing carbon film on surface of metal workpiece |
Also Published As
Publication number | Publication date |
---|---|
KR101179111B1 (en) | 2012-09-07 |
KR20090094363A (en) | 2009-09-04 |
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