WO2008090942A1 - 露光方法、露光装置、及びマイクロデバイスの製造方法 - Google Patents

露光方法、露光装置、及びマイクロデバイスの製造方法 Download PDF

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Publication number
WO2008090942A1
WO2008090942A1 PCT/JP2008/050943 JP2008050943W WO2008090942A1 WO 2008090942 A1 WO2008090942 A1 WO 2008090942A1 JP 2008050943 W JP2008050943 W JP 2008050943W WO 2008090942 A1 WO2008090942 A1 WO 2008090942A1
Authority
WO
WIPO (PCT)
Prior art keywords
exposure
light source
movable mirrors
pulse
exposure device
Prior art date
Application number
PCT/JP2008/050943
Other languages
English (en)
French (fr)
Inventor
Kei Nara
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2008090942A1 publication Critical patent/WO2008090942A1/ja
Priority to US12/507,275 priority Critical patent/US8456617B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　パルス光を射出する光源（ＬＳ）と、配列的に配置された複数の微少な可動ミラーを有し、該可動ミラーの動作状態を選択的に変化させることにより、任意のパターンを形成する可変成形マスク（８）とを備え、前記光源から射出され、前記可変成形マスクを介した光で基板（Ｐ）を露光する露光装置であって、前記可動ミラーの動作状態を変化させる動作タイミングと前記光源から射出されるパルス光のパルスの照射タイミングとが同期するように制御する制御装置（１００）を備えて構成される。
PCT/JP2008/050943 2007-01-25 2008-01-24 露光方法、露光装置、及びマイクロデバイスの製造方法 WO2008090942A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/507,275 US8456617B2 (en) 2007-01-25 2009-07-22 Exposure method, exposure device, and micro device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007015391A JP5211487B2 (ja) 2007-01-25 2007-01-25 露光方法及び露光装置並びにマイクロデバイスの製造方法
JP2007-015391 2007-01-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/507,275 Continuation US8456617B2 (en) 2007-01-25 2009-07-22 Exposure method, exposure device, and micro device manufacturing method

Publications (1)

Publication Number Publication Date
WO2008090942A1 true WO2008090942A1 (ja) 2008-07-31

Family

ID=39644516

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050943 WO2008090942A1 (ja) 2007-01-25 2008-01-24 露光方法、露光装置、及びマイクロデバイスの製造方法

Country Status (3)

Country Link
US (1) US8456617B2 (ja)
JP (1) JP5211487B2 (ja)
WO (1) WO2008090942A1 (ja)

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WO2016157697A1 (ja) * 2015-03-30 2016-10-06 ウシオ電機株式会社 露光装置及び露光方法

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NL2006254A (en) * 2010-02-23 2011-08-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
KR101059811B1 (ko) * 2010-05-06 2011-08-26 삼성전자주식회사 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법
WO2013058813A1 (en) * 2011-02-25 2013-04-25 Barret Lippey Laser display method and system
EP2768396A2 (en) 2011-10-17 2014-08-27 Butterfly Network Inc. Transmissive imaging and related apparatus and methods
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
EP3062146B1 (en) 2013-10-25 2020-01-22 Nikon Corporation Laser device, and exposure device and inspection device provided with laser device
DE102014203041A1 (de) * 2014-02-19 2015-08-20 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zum Betreiben eines solchen
KR101938723B1 (ko) * 2014-09-25 2019-01-15 에이에스엠엘 네델란즈 비.브이. 조명 시스템
WO2016104319A1 (ja) * 2014-12-25 2016-06-30 株式会社小糸製作所 点灯回路および車両用灯具
KR101682686B1 (ko) * 2015-09-24 2016-12-06 주식회사 리텍 고출력 uv led 광원의 펄스제어를 이용한 마스크리스 노광장치
KR101689836B1 (ko) * 2015-09-25 2016-12-27 주식회사 리텍 고출력 uv led 광원의 펄스제어를 이용한 dmd 과열 저감 시스템
JP6662453B2 (ja) 2016-05-26 2020-03-11 株式会社ニコン パルス光生成装置、パルス光生成方法、パルス光生成装置を備えた露光装置および検査装置
CN109154727B (zh) 2016-05-26 2022-02-22 株式会社尼康 脉冲光生成装置、脉冲光生成方法、具备脉冲光生成装置的曝光装置及检查装置
JP6818393B2 (ja) * 2016-09-01 2021-01-20 株式会社オーク製作所 露光装置
EP3702130B1 (de) * 2019-02-27 2022-05-18 Ivoclar Vivadent AG Stereolithografiegerät und ein verfahren zum einstellen eines stereolithografiegerätes
TW202301035A (zh) * 2021-04-27 2023-01-01 日商尼康股份有限公司 照明光學系統、曝光裝置及平板顯示器之製造方法
KR20240014514A (ko) * 2021-07-05 2024-02-01 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법

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JP2006080539A (ja) * 1998-03-02 2006-03-23 Micronic Laser Syst Ab 改良型パターン・ジェネレータ
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JP2006319140A (ja) * 2005-05-12 2006-11-24 Sharp Corp 露光方法、および露光装置

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JP2006080539A (ja) * 1998-03-02 2006-03-23 Micronic Laser Syst Ab 改良型パターン・ジェネレータ
JP2003332221A (ja) * 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
JP2006295175A (ja) * 2005-04-08 2006-10-26 Asml Netherlands Bv コントラスト装置のブレーズ部を用いるリソグラフィ装置及び素子製造方法
JP2006319140A (ja) * 2005-05-12 2006-11-24 Sharp Corp 露光方法、および露光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016157697A1 (ja) * 2015-03-30 2016-10-06 ウシオ電機株式会社 露光装置及び露光方法

Also Published As

Publication number Publication date
JP2008182115A (ja) 2008-08-07
JP5211487B2 (ja) 2013-06-12
US20090280441A1 (en) 2009-11-12
US8456617B2 (en) 2013-06-04

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