WO2008088053A1 - 研磨組成物 - Google Patents

研磨組成物 Download PDF

Info

Publication number
WO2008088053A1
WO2008088053A1 PCT/JP2008/050646 JP2008050646W WO2008088053A1 WO 2008088053 A1 WO2008088053 A1 WO 2008088053A1 JP 2008050646 W JP2008050646 W JP 2008050646W WO 2008088053 A1 WO2008088053 A1 WO 2008088053A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing composition
amino acid
polishing
preferable
ammonium
Prior art date
Application number
PCT/JP2008/050646
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Matsumura
Hiroshi Nitta
Original Assignee
Nitta Haas Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Incorporated filed Critical Nitta Haas Incorporated
Publication of WO2008088053A1 publication Critical patent/WO2008088053A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　本発明の目的は、ディッシングを抑制し、より高速研磨が可能な研磨組成物を提供することである。本発明の研磨組成物は、金属膜、特に銅（Ｃｕ）膜に好適な研磨組成物であって、アンモニア、アンモニウム塩、過酸化水素およびアミノ酸を含み、残部が水である。アンモニウム塩としては、塩化アンモニウム、炭酸アンモニウムが好ましく、アミノ酸としては、酸性アミノ酸およびヒドロキシアミノ酸が好ましい。
PCT/JP2008/050646 2007-01-18 2008-01-18 研磨組成物 WO2008088053A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007009609A JP2008177373A (ja) 2007-01-18 2007-01-18 研磨組成物
JP2007-009609 2007-01-18

Publications (1)

Publication Number Publication Date
WO2008088053A1 true WO2008088053A1 (ja) 2008-07-24

Family

ID=39636053

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050646 WO2008088053A1 (ja) 2007-01-18 2008-01-18 研磨組成物

Country Status (3)

Country Link
JP (1) JP2008177373A (ja)
TW (1) TW200844197A (ja)
WO (1) WO2008088053A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077061A (ja) * 1999-09-03 2001-03-23 Seimi Chem Co Ltd 半導体用研磨剤
JP2003507896A (ja) * 1999-08-13 2003-02-25 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003507896A (ja) * 1999-08-13 2003-02-25 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法
JP2001077061A (ja) * 1999-09-03 2001-03-23 Seimi Chem Co Ltd 半導体用研磨剤

Also Published As

Publication number Publication date
JP2008177373A (ja) 2008-07-31
TW200844197A (en) 2008-11-16

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