WO2008082689A1 - Two component photodiode detector - Google Patents

Two component photodiode detector Download PDF

Info

Publication number
WO2008082689A1
WO2008082689A1 PCT/US2007/072780 US2007072780W WO2008082689A1 WO 2008082689 A1 WO2008082689 A1 WO 2008082689A1 US 2007072780 W US2007072780 W US 2007072780W WO 2008082689 A1 WO2008082689 A1 WO 2008082689A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
photodiode
shield
detector
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/072780
Other languages
English (en)
French (fr)
Other versions
WO2008082689A8 (en
Inventor
Sean Thorne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Frontgrade Colorado Springs LLC
Original Assignee
Aeroflex Colorado Springs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aeroflex Colorado Springs Inc filed Critical Aeroflex Colorado Springs Inc
Priority to JP2009519593A priority Critical patent/JP5082064B2/ja
Priority to EP07872236.0A priority patent/EP2041605B1/en
Publication of WO2008082689A1 publication Critical patent/WO2008082689A1/en
Priority to IL196436A priority patent/IL196436A/en
Anticipated expiration legal-status Critical
Publication of WO2008082689A8 publication Critical patent/WO2008082689A8/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/2019—Shielding against direct hits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Definitions

  • Figure 5 is a top, side (cross section) and bottom view of one embodiment of a second substrate and circuit die combination component for a photodiode detector array according to the present invention
  • Figure 6 shows opposing side views of one embodiment of a photodiode detector array according to the present invention.
  • the second substrate combination 225 includes the circuit die 160, passive electronic components 290 and the means for transmitting electrical signals from the first substrate 210 to the circuit die 160 and from the circuit die 160 to and from the passive electronic components 290. Thereafter the electric signal interact with the system in which the two component 2 -D photodiode detector array is part.
  • the second substrate 160 is electrically joined to the first substrate 210 using a ball-grid array 230.
  • Another aspect of the present invention is the flip chip bonding of the circuit die 160 to the second substrate 220.
  • Flip chip bonding uses solder bumps similar in concept to BGA but with considerably increased refinements and tolerance requirements.
  • Wafer bumping as it is referred to, is an advanced packaging technique where bumps or balls made of solder are formed on the substrates before being diced into individual chips. Bumping is an essential process in flip chip packaging, which connects the components face down, directly with the substrate or board through conductive bumps on the chip pads. These bumps provide the electrical, mechanical and thermal interconnection, hence, providing direct contact between the chip package and the device. This type of bonding possesses considerable advantages as opposed to traditional wire bonding.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
PCT/US2007/072780 2006-07-11 2007-07-03 Two component photodiode detector Ceased WO2008082689A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009519593A JP5082064B2 (ja) 2006-07-11 2007-07-03 ２コンポーネント検出器、ｘ線照射検出器、フォトダイオード検出器アレイの回路ダイを遮蔽する方法
EP07872236.0A EP2041605B1 (en) 2006-07-11 2007-07-03 Two component photodiode detector
IL196436A IL196436A (en) 2006-07-11 2009-01-11 Two-component photodiode detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/456,662 2006-07-11
US11/456,662 US7504637B2 (en) 2006-07-11 2006-07-11 Two component photodiode detector

Publications (2)

Publication Number Publication Date
WO2008082689A1 true WO2008082689A1 (en) 2008-07-10
WO2008082689A8 WO2008082689A8 (en) 2009-02-26

Family

ID=38948316

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/072780 Ceased WO2008082689A1 (en) 2006-07-11 2007-07-03 Two component photodiode detector

Country Status (5)

Country Link
US (1) US7504637B2 (https=)
EP (1) EP2041605B1 (https=)
JP (1) JP5082064B2 (https=)
IL (1) IL196436A (https=)
WO (1) WO2008082689A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535033B2 (en) * 2004-09-14 2009-05-19 Banpil Photonics, Inc. Multicolor photodiode array and method of manufacturing
JP2007258199A (ja) * 2006-03-20 2007-10-04 Nec Electronics Corp 撮像素子
KR101441630B1 (ko) * 2008-02-12 2014-09-23 삼성디스플레이 주식회사 엑스레이 검출기 및 이의 제조방법
EP2347284B1 (en) * 2008-11-18 2018-05-23 Koninklijke Philips N.V. Spectral imaging detector
DE102010011582B4 (de) * 2010-03-16 2011-12-01 Siemens Aktiengesellschaft Detektormodul für einen Strahlendetektor und Strahlendetektor
RU2589252C2 (ru) 2011-02-03 2016-07-10 Конинклейке Филипс Н.В. Чувствительные к вертикальному излучению детекторы одной или многих энергий
US8829454B2 (en) 2012-02-27 2014-09-09 Analog Devices, Inc. Compact sensor module
US9116022B2 (en) 2012-12-07 2015-08-25 Analog Devices, Inc. Compact sensor module
US20140348290A1 (en) * 2013-05-23 2014-11-27 General Electric Company Apparatus and Method for Low Capacitance Packaging for Direct Conversion X-Ray or Gamma Ray Detector
DE102014211602B4 (de) * 2014-06-17 2018-10-25 Siemens Healthcare Gmbh Detektormodul für einen Röntgendetektor
WO2016064374A1 (en) * 2014-10-20 2016-04-28 Analogic Corporation Detector unit for detector array of radiation imaging modality
DE102014222690B4 (de) * 2014-11-06 2024-10-02 Siemens Healthineers Ag Detektormodul für einen Röntgendetektor
WO2016113647A1 (en) * 2015-01-15 2016-07-21 Koninklijke Philips N.V. Imaging detector module assembly
JP6559977B2 (ja) * 2015-03-05 2019-08-14 キヤノンメディカルシステムズ株式会社 検出器パック、ｘ線ｃｔ装置
US9835733B2 (en) * 2015-04-30 2017-12-05 Zhengrong Ying Apparatus for detecting X-rays
US10074624B2 (en) 2015-08-07 2018-09-11 Analog Devices, Inc. Bond pads with differently sized openings
US11156727B2 (en) * 2015-10-02 2021-10-26 Varian Medical Systems, Inc. High DQE imaging device
US11056455B2 (en) 2017-08-01 2021-07-06 Analog Devices, Inc. Negative fillet for mounting an integrated device die to a carrier
CN113228272B (zh) 2018-12-06 2025-02-28 美国亚德诺半导体公司 具有无源器件组件的集成器件封装
EP3890612A4 (en) 2018-12-06 2022-10-05 Analog Devices, Inc. SHIELDED INTEGRATED DEVICE HOUSINGS
US11664340B2 (en) 2020-07-13 2023-05-30 Analog Devices, Inc. Negative fillet for mounting an integrated device die to a carrier
CN116250085A (zh) * 2020-11-13 2023-06-09 Ams-欧司朗有限公司 用于检测x射线辐射的模块组件
CN116472474A (zh) * 2020-11-25 2023-07-21 浜松光子学株式会社 摄像单元及摄像系统

Citations (2)

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Publication number Priority date Publication date Assignee Title
US5811790A (en) * 1996-02-22 1998-09-22 Canon Kabushiki Kaisha Photoelectric conversion device having thermal conductive member
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4532782B2 (ja) * 2000-07-04 2010-08-25 キヤノン株式会社 放射線撮像装置及びシステム
JP2003084066A (ja) * 2001-04-11 2003-03-19 Nippon Kessho Kogaku Kk 放射線検出器用部品、放射線検出器および放射線検出装置
JP4133429B2 (ja) * 2003-02-24 2008-08-13 浜松ホトニクス株式会社 半導体装置
JP4364514B2 (ja) * 2003-01-08 2009-11-18 浜松ホトニクス株式会社 配線基板、及びそれを用いた放射線検出器
JP4421209B2 (ja) * 2003-04-11 2010-02-24 浜松ホトニクス株式会社 放射線検出器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811790A (en) * 1996-02-22 1998-09-22 Canon Kabushiki Kaisha Photoelectric conversion device having thermal conductive member
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2041605A4 *

Also Published As

Publication number Publication date
JP2009544011A (ja) 2009-12-10
EP2041605A4 (en) 2012-01-18
IL196436A0 (en) 2009-09-22
US7504637B2 (en) 2009-03-17
WO2008082689A8 (en) 2009-02-26
EP2041605B1 (en) 2014-04-30
IL196436A (en) 2013-05-30
EP2041605A1 (en) 2009-04-01
US20080011959A1 (en) 2008-01-17
JP5082064B2 (ja) 2012-11-28

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