WO2008081706A1 - 圧力波発生装置及びその温度調整方法 - Google Patents
圧力波発生装置及びその温度調整方法 Download PDFInfo
- Publication number
- WO2008081706A1 WO2008081706A1 PCT/JP2007/074248 JP2007074248W WO2008081706A1 WO 2008081706 A1 WO2008081706 A1 WO 2008081706A1 JP 2007074248 W JP2007074248 W JP 2007074248W WO 2008081706 A1 WO2008081706 A1 WO 2008081706A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulating layer
- heat
- wave generator
- pressure wave
- silicon
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K15/00—Acoustics not otherwise provided for
- G10K15/04—Sound-producing devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Multimedia (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Thermotherapy And Cooling Therapy Devices (AREA)
Abstract
圧力波発生装置(1)は、熱伝導性の基板(2)と、基板(2)の一方の主面に形成された断熱層(3)と、断熱層(3)の上に形成された絶縁体層(5)と、絶縁体層(5)の上に形成され、交流成分を含む電流が印加されて発熱する発熱体(4)と、を備える。断熱層(3)は、ナノ結晶シリコンである。絶縁体層(5)は、窒化珪素(Si3N4)、2酸化珪素(SiO2)、酸化アルミニウム(Al2O3)、酸化マグネシウム(MgO)、ダイヤモンド結晶炭素(C)、窒化アルミニウム(AlN)又は炭化珪素(SiC)のいずれか1つを含んで形成される。発熱体4は、例えば、金(Au)又はタングステン(W)を含んで形成される。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/521,120 US8130593B2 (en) | 2006-12-28 | 2007-12-17 | Pressure wave generator and temperature controlling method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-355625 | 2006-12-28 | ||
JP2006355625A JP4974672B2 (ja) | 2006-12-28 | 2006-12-28 | 圧力波発生装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008081706A1 true WO2008081706A1 (ja) | 2008-07-10 |
Family
ID=39588390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/074248 WO2008081706A1 (ja) | 2006-12-28 | 2007-12-17 | 圧力波発生装置及びその温度調整方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8130593B2 (ja) |
JP (1) | JP4974672B2 (ja) |
TW (1) | TWI401122B (ja) |
WO (1) | WO2008081706A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012020600A1 (ja) * | 2010-08-10 | 2012-02-16 | 株式会社村田製作所 | 音波源および超音波発生装置 |
CN109622347A (zh) * | 2018-12-26 | 2019-04-16 | 浙江清华柔性电子技术研究院 | 柔性mems超声波换能器及其制作方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014101287B4 (de) * | 2014-02-03 | 2017-09-21 | Bundesrepublik Deutschland, Vertreten Durch Den Bundesminister Für Wirtschaft Und Energie, Dieser Vertreten Durch Den Präsidenten Der Bundesanstalt Für Materialforschung Und -Prüfung (Bam) | Thermoakustischer Ultraschallwandler |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005269745A (ja) * | 2004-03-17 | 2005-09-29 | Nokodai Tlo Kk | 超音波音源および超音波センサ |
JP2005313086A (ja) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Works Ltd | 圧力波発生素子 |
JP2006013961A (ja) * | 2004-06-25 | 2006-01-12 | Matsushita Electric Works Ltd | 圧力波発生素子およびその製造方法 |
JP2007144406A (ja) * | 2005-10-26 | 2007-06-14 | Matsushita Electric Works Ltd | 圧力波発生装置およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2447593A2 (fr) * | 1978-08-11 | 1980-08-22 | Thomson Csf | Dispositif autoregule en temperature et son application a la mesure de temperature par couple thermo-electrique |
JP3705926B2 (ja) | 1998-04-23 | 2005-10-12 | 独立行政法人科学技術振興機構 | 圧力波発生装置 |
JP3798302B2 (ja) * | 2001-11-20 | 2006-07-19 | 独立行政法人科学技術振興機構 | 熱誘起圧力波発生装置 |
SG114589A1 (en) * | 2001-12-12 | 2005-09-28 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
KR20060095582A (ko) * | 2003-02-28 | 2006-08-31 | 노우코우다이 티엘오 가부시키가이샤 | 열 여기음파 발생장치 |
JP3845077B2 (ja) | 2003-08-28 | 2006-11-15 | 農工大ティー・エル・オー株式会社 | 音波発生装置の製造方法 |
KR100855788B1 (ko) * | 2004-04-28 | 2008-09-01 | 마츠시다 덴코 가부시키가이샤 | 압력파 발생장치 및 그 제조방법 |
US8130986B2 (en) * | 2006-01-23 | 2012-03-06 | The Regents Of The University Of Michigan | Trapped fluid microsystems for acoustic sensing |
-
2006
- 2006-12-28 JP JP2006355625A patent/JP4974672B2/ja active Active
-
2007
- 2007-12-17 US US12/521,120 patent/US8130593B2/en not_active Expired - Fee Related
- 2007-12-17 WO PCT/JP2007/074248 patent/WO2008081706A1/ja active Application Filing
- 2007-12-26 TW TW096150357A patent/TWI401122B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005269745A (ja) * | 2004-03-17 | 2005-09-29 | Nokodai Tlo Kk | 超音波音源および超音波センサ |
JP2005313086A (ja) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Works Ltd | 圧力波発生素子 |
JP2006013961A (ja) * | 2004-06-25 | 2006-01-12 | Matsushita Electric Works Ltd | 圧力波発生素子およびその製造方法 |
JP2007144406A (ja) * | 2005-10-26 | 2007-06-14 | Matsushita Electric Works Ltd | 圧力波発生装置およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012020600A1 (ja) * | 2010-08-10 | 2012-02-16 | 株式会社村田製作所 | 音波源および超音波発生装置 |
CN109622347A (zh) * | 2018-12-26 | 2019-04-16 | 浙江清华柔性电子技术研究院 | 柔性mems超声波换能器及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US8130593B2 (en) | 2012-03-06 |
TWI401122B (zh) | 2013-07-11 |
JP2008161816A (ja) | 2008-07-17 |
JP4974672B2 (ja) | 2012-07-11 |
TW200841941A (en) | 2008-11-01 |
US20100025145A1 (en) | 2010-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Tong et al. | Low vacuum wafer bonding | |
WO2001069228A3 (en) | Mis hydrogen sensors | |
TW200620632A (en) | Semiconductor memory | |
WO2002048434A3 (en) | Gallium nitride materials and methods for forming layers thereof | |
WO2002086180A3 (en) | A process for converting a metal carbide to diamond by etching in halogens | |
TW200517642A (en) | Sensor usable in ultra pure and highly corrosive environments | |
WO2006052576A3 (en) | Encapsulated wafer processing device and process for making thereof | |
WO2008081706A1 (ja) | 圧力波発生装置及びその温度調整方法 | |
WO2002069373A3 (en) | Gallium nitride material based semiconductor devices including thermally conductive regions | |
WO2005012592A3 (en) | Cvd diamond-coated composite substrate for making same | |
TW200518197A (en) | Substrate for nitride semiconductor growth | |
TW200610016A (en) | Semiconductor device | |
US20140021501A1 (en) | Light Emitting Diode Device with Enhanced Heat Dissipation, and the Method of Preparing the Same | |
MY143405A (en) | N-type nitride semiconductor laminate and semiconductor device using same | |
WO2002081363A3 (de) | Verfahren zur herstellung eines halbleiterbauelements sowie ein nach dem verfahren hergestelltes halbleiterbauelement | |
WO2003003435A3 (en) | Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor | |
WO2002082517A1 (fr) | Procede de fabrication pour substrat semi-conducteur et element semi-conducteur | |
EP1247653A3 (en) | Thermal head enabling continuous printing without print quality deterioration | |
WO2002009131A3 (de) | Halbleiterbauelement mit einer piezo- oder pyroelektrischen schicht und dessen herstellungsverfahren | |
WO2008081705A1 (ja) | 圧力波発生装置及びその放熱方法 | |
WO2002046121A3 (de) | Substrat auf basis von siliciumnitrid für halbleiter-bauelemente | |
EP1333008A3 (en) | Systems and methods for thermal isolation of a silicon structure | |
JPH10134938A (ja) | 接触加熱用ヒータ | |
AU2002216529A1 (en) | A resistor element for extreme temperatures | |
Joyeux et al. | Second phase formation and properties of AlN ceramics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07850736 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12521120 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07850736 Country of ref document: EP Kind code of ref document: A1 |