WO2008078691A1 - 基板処理装置およびクリーニング方法 - Google Patents

基板処理装置およびクリーニング方法 Download PDF

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Publication number
WO2008078691A1
WO2008078691A1 PCT/JP2007/074688 JP2007074688W WO2008078691A1 WO 2008078691 A1 WO2008078691 A1 WO 2008078691A1 JP 2007074688 W JP2007074688 W JP 2007074688W WO 2008078691 A1 WO2008078691 A1 WO 2008078691A1
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WO
WIPO (PCT)
Prior art keywords
substrate
organic material
cleaned
space
ito
Prior art date
Application number
PCT/JP2007/074688
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English (en)
French (fr)
Inventor
Kenji Sudou
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2008078691A1 publication Critical patent/WO2008078691A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Cleaning In General (AREA)

Abstract

【課題】有機材料を劣化させずにＩＴＯ表面に密着して有機膜を形成する。 【解決手段】基板Ｇは、前処理室ＣＭにて前処理としてクリーニングされている。バルブ３００を閉じることにより、有機材料が収納された空間は、処理容器ＰＭ１により画定された空間から遮断される。遮断後、クリーニング装置は、処理容器ＰＭ１内にて基板ＧのＩＴＯ表面を最終クリーニングする。最終クリーニング後、バルブ３００を開くことにより、有機材料が収納された空間は基板Ｇをクリーニングした空間と連通する。連通後、収納された有機材料を気化させ、気化させた有機材料を有機材料が収納された空間から基板Ｇをクリーニングする空間に吹き出させる。これにより、基板Ｇをクリーニングした処理容器ＰＭ１と同一の処理容器内にてクリーニングされた基板ＧのＩＴＯ表面にホール輸送層（第１層の有機膜）を密着して形成する。
PCT/JP2007/074688 2006-12-22 2007-12-21 基板処理装置およびクリーニング方法 WO2008078691A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006346181A JP5095990B2 (ja) 2006-12-22 2006-12-22 基板処理装置およびクリーニング方法
JP2006-346181 2006-12-22

Publications (1)

Publication Number Publication Date
WO2008078691A1 true WO2008078691A1 (ja) 2008-07-03

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ID=39562480

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074688 WO2008078691A1 (ja) 2006-12-22 2007-12-21 基板処理装置およびクリーニング方法

Country Status (3)

Country Link
JP (1) JP5095990B2 (ja)
TW (1) TW200840113A (ja)
WO (1) WO2008078691A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113659A1 (ja) * 2009-03-31 2010-10-07 東京エレクトロン株式会社 成膜装置、成膜方法及び有機ｅｌ素子
JP5478324B2 (ja) * 2010-03-30 2014-04-23 株式会社アルバック クリーニング装置、成膜装置、成膜方法
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
KR102074255B1 (ko) * 2012-04-13 2020-02-06 오티아이 루미오닉스 인크. 기판의 작용화
US8853070B2 (en) 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142168A (ja) * 1993-11-16 1995-06-02 Matsushita Electric Ind Co Ltd 有機ｅｌ素子の製造方法
JPH08222368A (ja) * 1995-02-14 1996-08-30 Ulvac Japan Ltd 有機エレクトロルミネッセンス素子、その製造方法並びにその製造装置
JPH10255973A (ja) * 1997-03-10 1998-09-25 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子の製造方法
JP2003313654A (ja) * 2001-12-12 2003-11-06 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法およびクリーニング方法
JP2005142079A (ja) * 2003-11-07 2005-06-02 Fuji Electric Holdings Co Ltd スパッタ装置、スパッタ方法、有機ｅｌ発光素子の製造装置および有機ｅｌ発光素子の製造方法
JP2006104497A (ja) * 2004-10-01 2006-04-20 Hitachi Zosen Corp 蒸着装置
JP2006152326A (ja) * 2004-11-25 2006-06-15 Tokyo Electron Ltd 蒸着装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142168A (ja) * 1993-11-16 1995-06-02 Matsushita Electric Ind Co Ltd 有機ｅｌ素子の製造方法
JPH08222368A (ja) * 1995-02-14 1996-08-30 Ulvac Japan Ltd 有機エレクトロルミネッセンス素子、その製造方法並びにその製造装置
JPH10255973A (ja) * 1997-03-10 1998-09-25 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子の製造方法
JP2003313654A (ja) * 2001-12-12 2003-11-06 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法およびクリーニング方法
JP2005142079A (ja) * 2003-11-07 2005-06-02 Fuji Electric Holdings Co Ltd スパッタ装置、スパッタ方法、有機ｅｌ発光素子の製造装置および有機ｅｌ発光素子の製造方法
JP2006104497A (ja) * 2004-10-01 2006-04-20 Hitachi Zosen Corp 蒸着装置
JP2006152326A (ja) * 2004-11-25 2006-06-15 Tokyo Electron Ltd 蒸着装置

Also Published As

Publication number Publication date
JP5095990B2 (ja) 2012-12-12
TW200840113A (en) 2008-10-01
JP2008159381A (ja) 2008-07-10

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