WO2008070060A3 - Device manufacturing process utilizing a double pattering process - Google Patents

Device manufacturing process utilizing a double pattering process Download PDF

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Publication number
WO2008070060A3
WO2008070060A3 PCT/US2007/024806 US2007024806W WO2008070060A3 WO 2008070060 A3 WO2008070060 A3 WO 2008070060A3 US 2007024806 W US2007024806 W US 2007024806W WO 2008070060 A3 WO2008070060 A3 WO 2008070060A3
Authority
WO
WIPO (PCT)
Prior art keywords
photosensitive composition
rinsing
applying
bilayer stack
exposing
Prior art date
Application number
PCT/US2007/024806
Other languages
French (fr)
Other versions
WO2008070060A2 (en
Inventor
Dave Brzozowy
Thomas R Sarubbi
Sanjay Malik
Gregory Spaziano
Original Assignee
Fujifilm Electronic Materials
Dave Brzozowy
Thomas R Sarubbi
Sanjay Malik
Gregory Spaziano
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials, Dave Brzozowy, Thomas R Sarubbi, Sanjay Malik, Gregory Spaziano filed Critical Fujifilm Electronic Materials
Priority to JP2009540251A priority Critical patent/JP2010511915A/en
Priority to EP07862481A priority patent/EP2089774A2/en
Publication of WO2008070060A2 publication Critical patent/WO2008070060A2/en
Publication of WO2008070060A3 publication Critical patent/WO2008070060A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A process for manufacturing a semiconductor device using a multiple exposure patterning process including providing a coated semiconductor substrate, applying a first photosensitive composition, exposing the first photosensitive composition, developing the exposed first photosensitive composition, rinsing the imaged bilayer stack, applying a fixer solution, rinsing the imaged bilayer stack containing the stabilized image, applying a second photosensitive composition, exposing the second photosensitive composition, developing the second photosensitive composition, rinsing the imaged bilayer stack, wherein the first and second photosensitive compositions each comprise a photoacid generator and a substantially aqueous base insoluble polymer whose aqueous base solubility increases upon treatment with acid and comprises an anchor group. The fixer solution comprises a polyfunctional fixer compound which is reactive with the anchor group, but does not contain silicon and wherein the semiconductor substrate stays within a lithographic cell from at least the first coating step until at least after the final exposure.
PCT/US2007/024806 2006-12-06 2007-12-04 Device manufacturing process utilizing a double pattering process WO2008070060A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009540251A JP2010511915A (en) 2006-12-06 2007-12-04 Equipment manufacturing process using double patterning process
EP07862481A EP2089774A2 (en) 2006-12-06 2007-12-04 Device manufacturing process utilizing a double pattering process

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US87311706P 2006-12-06 2006-12-06
US60/873,117 2006-12-06
US90221307P 2007-02-20 2007-02-20
US60/902,213 2007-02-20

Publications (2)

Publication Number Publication Date
WO2008070060A2 WO2008070060A2 (en) 2008-06-12
WO2008070060A3 true WO2008070060A3 (en) 2009-04-16

Family

ID=39492840

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/024806 WO2008070060A2 (en) 2006-12-06 2007-12-04 Device manufacturing process utilizing a double pattering process

Country Status (6)

Country Link
US (1) US20080199814A1 (en)
EP (1) EP2089774A2 (en)
JP (1) JP2010511915A (en)
KR (1) KR20090095604A (en)
TW (1) TW200845203A (en)
WO (1) WO2008070060A2 (en)

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Also Published As

Publication number Publication date
EP2089774A2 (en) 2009-08-19
TW200845203A (en) 2008-11-16
WO2008070060A2 (en) 2008-06-12
KR20090095604A (en) 2009-09-09
JP2010511915A (en) 2010-04-15
US20080199814A1 (en) 2008-08-21

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