JP2019117401A - Photoresists and methods for use thereof - Google Patents

Abstract

To provide new photoresists that comprise an Si-containing component and that are particularly useful for ion implant lithography applications.SOLUTION: A photoresist relief image is formed by: (a) applying, onto a substrate, a photoresist comprising a resin, a photoactive component and an adhesion-promoting agent comprising one or more Si-containing groups; and (b) exposing a photoresist coating layer to a patterned activating radiation. The photoresists can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.SELECTED DRAWING: None

Description

  The present invention relates to novel photoresists that contain Si-containing components and are particularly useful for ion implantation lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

  Photoresist is a photosensitive film used to transfer an image to a substrate. A coating layer of photoresist is formed on the substrate, and the photoresist layer is then exposed to an activating radiation source through a photomask.

  Ion implantation techniques have been used to dope semiconductor wafers. With this approach, the ion beam implanter produces an ion beam in a vacuum (low pressure) chamber, which ions are directed at the wafer and "implanted" into the wafer.

However, the current ion implantation method has a significant problem. In particular, in implant lithography protocols, photoresist is often not deposited on organic underlayers, but instead is deposited on inorganic layers, such as silicon oxynitride (SiON), SiO (silicon oxide) layers, and Other inorganic materials, such as Si ₃ N ₄ coatings, have been used in semiconductor device manufacturing, for example, as etch stop layers and inorganic antireflective layers. See, for example, U.S. Patent Nos. 6,124,217; 6,153,504; and 6,245,682.

U.S. Patent No. 6,124,217 U.S. Patent No. 6,153,504 U.S. Patent No. 6,245,682

  It is desirable to have a new photoresist system that provides good resolution and adhesion on SiON and other inorganic substrate layers.

  Here, the inventor provides a novel photoresist composition which preferably comprises an adhesion promoting component, a photoacid-labile group-containing resin, and one or more photoacid generator compounds. Preferred resists of the invention are useful for short wavelength imaging including sub-300 nm and sub-200 nm wavelengths, such as 248 nm, 193 nm and EUV.

  The adhesion promoting component (generally referred to herein as an "adhesion promoting component" or "adhesion promoting additive") suitably comprises one or more Si atoms.

  In certain preferred forms, the adhesion promoting component or additive referred to herein is a compound which is incorporated into the photoresist composition to provide a discernible increase in adhesion of the resist to the SiON or silicon oxide surface layer. Can be. A noticeable increase in adhesion is indicated by the increased resolution over the control resist (the same resist treated in the same way but without the adhesion promoting component). This increased resolution is determined by visual inspection of scanning electron micrographs (SEM) of resists (test resists) and control resists that contain the candidate adhesion promoting component. Thus, adhesion promoting components suitable for any given resist system can be readily identified experimentally.

  Adhesion promoting components suitable for use in resists of the invention may suitably include additional groups in addition to Si. Preferred adhesion promoting components can include carbon (ie, the component is an organic substance) and can be of relatively low molecular weight, eg, less than about 5000, preferably less than about 4000 or 3000, and preferred May have a molecular weight of less than about 2000 or 1000, or even less than about 800, 700, 600, 500, 400, 300, 250, 200, 150 or 100. The adhesion promoting component for use in resists of the invention may suitably be polymeric or non-polymeric (ie, non-polymeric groups do not include multiple repeat units).

  Preferred adhesion promoting components can also include other groups containing one or more heteroatoms (N, O and / or S), reactive groups such as epoxy. For example, in addition to the epoxy, the adhesion promoting component has a nitrogen-containing moiety, eg, a moiety comprising a cyclic nitrogen group, eg, 1 to 3 nitrogen ring atoms and has 4 to about 16 total ring atoms Non-aromatic ring groups can be included, such as, for example, optionally substituted azoles, optionally tetrazole, optionally substituted triazole, optionally substituted imidazole, and optionally substituted benzotriazole, and the like.

  Preferred resists of the invention can be imaged at short wavelengths including sub 300 nm and sub 200 nm such as 248 nm, 193 nm and EUV.

Particularly preferred photoresists of the invention include an adhesion promoting component as disclosed herein, an imaging effective amount of one or more photoacid generator compounds (PAGs), and a resin selected from the group consisting of: Including:
1) Phenolic resins containing acid labile groups that can provide chemically amplified positive-acting resists, which are particularly suitable for imaging at 248 nm. Particularly preferred resins of this type include: i) polymers comprising polymerized units of vinylphenol and alkyl acrylate, in which polymers the polymerized alkyl acrylate units are denatured in the presence of a photoacid It can be subjected to a deblocking reaction. Typically, alkyl acrylates that can undergo photoacid-induced deblocking reactions include, for example, t-butyl acrylate, t-butyl methacrylate, methyladamantyl acrylate, methyladamantyl methacrylate, and photoacid-induced reactions. Other non-cyclic alkyl and cycloaliphatic acrylates that may be included, such as, for example, the polymers in US Pat. Nos. 6,042,997 and 5,492,793 (incorporated herein by reference) Ii) acrylics such as vinylphenol, optionally substituted (but not containing hydroxy or carboxy ring substituents) vinylphenyl (eg styrene), and the deblocking groups described for polymer i) above Polymers containing polymerized units of alkyl acid, such as US No. 6,042,997 (incorporated herein by reference), and iii) containing repeating units comprising an acetal or ketal moiety capable of reacting with a photoacid, and optionally an aroma Group repeat units such as, for example, polymers containing phenyl or phenolic groups and the like;
2) A resin that is substantially or completely free of phenyl or other aromatic groups, which can provide a chemically amplified positive resist particularly suitable for imaging at sub-200 nm wavelengths such as 193 nm. Particularly preferred resins of this type include: i) polymers comprising polymerized units of non-aromatic cyclic olefins (endocyclic double bonds), such as optionally substituted norbornenes, eg US Polymers described in Patent 5,843,624 (incorporated herein by reference); ii) alkyl acrylate units, such as t-butyl acrylate, t-butyl methacrylate, methyladamantyl acrylate Methyladamantyl methacrylate, and other polymers comprising acyclic alkyl and cycloaliphatic acrylates; polymers described, for example, in US Pat. No. 6,057,083.

  The resists of the invention may also comprise a mixture of separate PAGs, typically a mixture of 2 or 3 different PAGs, more typically a mixture of a total of 2 separate PAGs.

  The present invention provides high resolution patterned photoresist images (eg, essentially vertical sidewalls of sub-quarter micron dimensions or smaller, eg, sub 0.2 or sub 0.1 micron dimensions). Also provided are methods of forming a relief image of a photoresist of the invention, including methods of forming a patterned line).

  The invention further includes an article of manufacture comprising a substrate, such as a microelectronic wafer, coated with the photoresist and relief image of the invention on the substrate. The invention also includes methods of making microelectronic wafers and other articles.

  Furthermore, as discussed, in a preferred form, the present invention provided known ion implantation processes. This process comprises dopant ions (eg, Group III and / or Group V ions, eg, boron) on the surface of a substrate (eg, a semiconductor wafer) having an organic photoresist as disclosed on the substrate that functions as a mask. Injection of arsenic, phosphorus, etc.). A resist masked substrate may be placed in a reaction chamber that may provide plasma and reduced pressure of ions from an ionizable source. These ions include dopants as mentioned which are electrically active when implanted into the substrate. A voltage may be applied (such as through a conductive chamber wall) within the reaction chamber to selectively implant dopant ions.

Other aspects of the invention are disclosed infra.
As mentioned above, here, the inventor as disclosed in the present specification, 1) a resin component which can suitably contain a photoacid-labile group; 2) one or more photoacid generators A novel photoresist is provided which suitably comprises: a compound; and 3) an adhesion promoting component. Preferred photoresists of the invention are positive resists, in particular chemically amplified resists. The invention also includes negative-acting photoresists, wherein the resist can include a resin, a crosslinking function and an adhesion promoting component as disclosed herein.

Particularly preferred adhesion promoting compounds for use in resists of the invention include one or more silane alkoxy moieties, such as Si, one or more oxygens, such as 1 to 3 oxygen, and 1 to 20 carbons. group, for _{example, -Si (OCH 3), -} Si (OCH 2 CH 3) 3, -Si (OCH 2 CH 2 CH 3) 3, -Si (O (CH 2) 3 CH 3) 3, -Si ( _{CH 3) 2 (OCH 2 CH} 3), - Si (CH 3) (OCH 2 CH 3) , and the like _2.

Other preferred groups of adhesion promoting components include cyano, halogenated groups such as halogenated carbocyclic aryl such as fluorinated phenyl (eg phenyl), as well as halogenated C _1-20 alkyl such as Fluoroalkyl is mentioned.

  Particularly preferred for use in resists of the invention are adhesion promoting compounds comprising 1) one or more Si groups (such as one or more silane alkoxy moieties), and 2) one or more epoxy groups.

  In certain embodiments, the adhesion promoting compound can include one or more epoxy groups, and the Si-containing group is absent. Such epoxy-containing components can preferably be present with one or more ether groups.

  As mentioned above, the resist adhesion promoting component may suitably and often preferably be non-polymeric, ie it may not contain more than one repeating unit.

  In another form, the adhesion promoting additive may suitably be a polymer and may, for example, comprise a plurality of repeat units having an epoxy group or the like. In this form of the invention, the adhesion promoting additive may suitably have a relatively large molecular weight, for example a molecular weight greater than 1,000 or 1,500 daltons. However, such polymeric additives may preferably not have a weight average molecular weight greater than about 3,000, 4,000, 5,000 or 10,000 daltons.

  Preferably, the adhesion promoting component is stable in the photoresist composition and can not interfere with the lithographic processing of the resist. That is, the additive component preferably does not promote premature degradation of the resist (ie, reduced shelf life) or require changing lithographic processing conditions.

  Adhesion promoting additives are typically other resist components such as, for example, photoacid labile or deblocking resins, photoacid generators, basic additives, surfactants / levelers, plasticizers and / or solvents. Can be further discrete resist components. Thus, in at least certain embodiments, adhesion promoting additives suitable for use in resists include photoacid labile moieties such as photoacid labile ester or acetal groups that undergo a deblocking reaction as a result of the photoresist exposure step. It does not have to be included.

  Adhesion promoting additives can provide other functions to the resist composition, for example, can provide or enhance the solvency of solid components. However, unlike other volatile solvents, after the pre-exposure heat treatment, the adhesion promoting additive can remain in the resist layer in an effective amount, for example, an adhesive preferably formulated in a liquid resist composition At least about 10, 20, 30, 40, or 50 mole percent of the amount of accelerating additive can remain in the resist composition after the pre-exposure heat treatment. Typically, only a small amount of adhesion promoting additive needs to remain in the resist coating layer after any heat treatment to achieve effective results, eg, the adhesion promoting additive is volatile It can be suitably present in an amount of about 0.05 or 0.1 weight percent to about 5 weight percent of the total material of the resist layer after solvent removal.

Particularly preferred adhesion promoters for use in photoresists of the invention include the following (compound names are indicated immediately below the structure):

As indicated herein, various substituents of components of the resist may be optionally substituted. The substituted moieties may be at one or more available positions, for example, halogen such as F, Cl, Br and / or I, nitro, cyano, sulfono, alkyl such as C _1-16 alkyl (C _1-8 alkyl Preferred), haloalkyl such as fluoroalkyl (eg trifluoromethyl) and perhaloalkyl such as perfluoroC _1-4 alkyl, alkoxy, eg C _1-16 alkoxy having one or more oxygen bonds (C _1-8 Alkoxy is preferred), alkenyl, such as C _2-12 alkenyl (C _2-8 alkenyl is preferred), alkenyl such as C _2-12 alkenyl (C _2-8 alkynyl is preferred), aryl, such as phenyl or naphthyl As well as substituted aryl, such as halo, alkoxy, al Sulfonyl, (preferably having the number of carbon atoms for the corresponding groups) alkynyl and / or alkyl-substituted aryl with, be suitably substituted. Preferred substituted aryl groups include substituted phenyl, anthracenyl and naphthyl.

  Photoresists of the invention typically comprise a resin binder and a photoactive component and an adhesion promoting component. For example, preferred are resin binders comprising polar functional groups such as hydroxyl or carboxylate. Preferably, the resinous binder is used in the resist composition in an amount sufficient to render the resist developable with an aqueous alkaline solution.

  In many embodiments, chemically amplified positive resists are preferred. Many such resist compositions are described, for example, in US Pat. Nos. 4,968,581; 4,883,740; 4,810,613; and 4,491,628; and Canada. It is described in Patent Application Publication No. 2,001,384.

式中、Ｒはカンフル、アダマンタン、アルキル（例えば、Ｃ_１−１２アルキル）およびフルオロアルキル、例えば、フルオロ（Ｃ_１−１８アルキル）、例えば、ＲＣＦ_２−（Ｒは場合によって置換されたアダマンチルである）である。 Photoresists for use in the present invention are photoactive components, preferably one or more, suitably used in an amount sufficient to produce a latent image in the coating layer of the resist upon exposure to activating radiation. And a photoacid generator (i.e., PAG). Preferred PAGs for imaging at 193 nm and 248 nm imaging include imidosulfonates such as the compounds of the following formula:

Wherein R is camphor, adamantane, alkyl (eg C _1-12 alkyl) and fluoroalkyl such as fluoro (C _1-18 alkyl) eg RCF _2- (R is optionally substituted adamantyl ).

  Other known PAGs may also be used in the resists of the invention. PAGs that do not contain aromatic groups, such as the above imidosulfonates, are generally preferred, in particular for imaging at 193 nm, to provide enhanced transparency.

  Other photoacid generators suitable for use in the present photoresist include, for example, onium salts, such as triphenylsulfonium trifluoromethanesulfonate, (p-tert-butoxyphenyl) diphenylsulfonium trifluoromethanesulfonate, tris (P-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate; nitrobenzyl derivatives such as 2-nitrobenzyl p-toluenesulfonate, 2, 6-dinitrobenzyl p-toluenesulfonate And 2,4-dinitrobenzyl p-toluenesulfonate; sulfonic acid esters such as 1,2,3-tris (methanesulfonyloxy) benzene, 1,2,3-tris (trifluorometa) Sulfonyloxy) benzene, and 1,2,3-tris (p-toluenesulfonyloxy) benzene; diazomethane derivatives such as bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane; glyoxime derivatives such as bis- O- (p-toluenesulfonyl) -α-dimethylglyoxime and bis-O- (n-butanesulfonyl) -α-dimethylglyoxime; sulfonic acid ester derivatives of N-hydroxyimide compounds, for example, N-hydroxysuccinimide Methanesulfonic acid esters, N-hydroxysuccinimide trifluoromethanesulfonic acid esters; and halogen-containing triazine compounds, for example, 2- (4-methoxyphenyl) -4,6-bis (trichloromethyl) -1,3,3, - triazine, and 2- (4-methoxynaphthyl) -4,6-bis (trichloromethyl) -1,3,5-triazine. One or more of such PAGs may be used.

  Preferred optional additives of the photoresists used according to the invention are additional bases, in particular tetramethyl ammonium hydroxide (TBAH) or tetramethyl ammonium lactate, which improve the resolution of the developed resist relief image Can. For resists imaged at 193 nm, the preferred additional base is the lactate salt of tetramethyl ammonium hydroxide, as well as various other amines such as triisopropanol, diazabicycloundecene or diazabicyclononene. The additional base is suitably used in relatively small amounts, for example about 0.03 to 5 weight percent based on total solids.

  The photoresists used in accordance with the present invention may also contain any other material. For example, other optional additives include anti-striation agents, plasticizers, speed enhancers and the like. Such optional additives are typically employed, except for fillers and dyes which can be present in relatively high concentrations, eg, about 5 to 30 weight percent of the total weight of the dry components of the resist. , In low concentrations in the photoresist composition.

  The photoresists used in accordance with the present invention are generally manufactured according to the following known procedure. For example, resists of the invention can be prepared as a coating composition by dissolving the components of the photoresist in a suitable solvent, such as, for example, glycol ethers such as 2-methoxyethyl. Ether (diglyme), ethylene glycol monomethyl ether, propylene glycol monomethyl ether; propylene glycol monomethyl ether acetate; lactate ester, for example, ethyl lactate or methyl lactate, ethyl lactate is preferred; propionate ester, in particular methyl propionate, ethyl propionate And ethyl ethoxy propionate; cellosolve esters such as methyl cellosolve acetate; aromatic hydrocarbons such as toluene or xylene; or ketones such as methyl ethyl ketone Emissions include cyclohexanone and 2-heptanone. The solids content of the photoresist typically varies from 5 to 35 weight percent of the total weight of the photoresist composition. Blends of such solvents are also suitable.

  The liquid photoresist composition may be applied to the substrate by, for example, spinning, dipping, roller coating or other conventional coating techniques. In the case of spin coating, the solids content of the coating solution is such as to provide the desired film thickness based on the specific spinning equipment used, the viscosity of the solution, the speed of the spinner and the amount of time allowed for spinning. It can be adjusted.

  The photoresist compositions used in accordance with the present invention are suitably applied to substrates conventionally used in processes involving coating with photoresists. For example, the composition can be applied on silicon wafers for the manufacture of microprocessors and other integrated circuit components, or silicon wafers coated with silicon dioxide. Aluminum-aluminum oxide, gallium arsenide, ceramic, quartz, copper, glass substrates and the like are also suitably used. Photoresists may also be suitably applied over antireflective layers, in particular organic antireflective layers.

  Following coating of the photoresist on the surface, the photoresist can be dried by heating to remove the solvent, preferably until the photoresist coating is not tacky.

  The photoresist layer is then exposed to imaging radiation. An immersion lithography process may be used. References herein to “immersion exposure” or other like terms refer to a liquid layer (eg, water or water containing an additive) interposed between the exposure tool and the applied photoresist composition layer. ) Is used to indicate that exposure is to be performed.

The photoresist composition layer is suitably patterned, exposed to activating radiation typically having an exposure energy in the range of about 1 to 100 mJ / cm ² , depending on the components of the photoresist composition and the exposure tool. Ru. Reference herein to exposing a photoresist composition to radiation that activates the photoresist induces a reaction of the photoactive component (e.g., generates a photoacid from a photoacid generator compound) Indicate that the radiation can form a latent image in the photoresist.

  As mentioned above, the photoresist composition is preferably photoactivated with short exposure wavelengths, in particular sub 400 nm, sub 300 nm and sub 200 nm exposure wavelengths, EUV and I-line (365 nm), 248 nm and 198 nm being particularly preferred It is an exposure wavelength.

  Following exposure, the film layer of the composition is preferably baked at a temperature ranging from about 70 ° C to about 160 ° C. The film is then preferably an aqueous developer, such as a quaternary ammonium hydroxide solution, such as a tetraalkyl ammonium hydroxide solution; various amine solutions, preferably 0.26 N tetramethyl ammonium hydroxide, such as Developed by treatment with ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine or methyldiethylamine; alcohol amines such as diethanolamine or triethanolamine; cyclic amines such as pyrrole, pyridine etc. .

  The photoresists and methods of the invention can be used in various applications, for example, in the manufacture of back-end implants, CD masks, magnetic disks and thin film heads (e.g., 3-5 [mu] m).

  Also, the photoresists of the present invention may be useful for forming metal bumps on a semiconductor wafer. Such processing a) places the photoresist of the invention on a semiconductor wafer, preferably providing a thick film coating layer such as a dry resist coating layer of 50 μm or more; c) this photosensitive composition Imagewise exposing the layer of material with actinic radiation, eg sub 300 nm or sub 200 nm radiation, in particular 248 nm and 193 nm; d) developing the exposed layer of the photosensitive composition to pattern Providing a patterned area; e) depositing metal on the patterned area; and f) removing the exposed photosensitive composition to provide a semiconductor wafer having metal bumps; Can.

  In such bump formation methods, the photoresist layer is imaged to form an opening such as a via in the photosensitive layer. In such processes, the photosensitive layer is disposed on the conductive layer on the electronic device. Exposure of the photosensitive composition and subsequent development provides holes (vias) defined in the photosensitive composition to expose the underlying conductive layer. Thus, the next step in this process is to deposit metal or metal alloy bumps in the defined holes (vias). Such metal deposition can be by electroless or electrolytic deposition processes. Electrolytic metal deposition is preferred. In the electrolytic metal deposition process, the electronic device substrate, ie, the semiconductor wafer, functions as the cathode.

  A conductive layer such as copper or nickel is deposited by sputtering, electroless deposition, etc. to form the under-bump metal prior to deposition of such metals or metal alloys as suitable for solder. Can. Such underbump metal layers are typically 1000-50,000 Å thick and serve as a basis for wettability to solder bumps that are subsequently plated.

  Various metals can be electrolessly deposited, including but not limited to copper, tin-lead, nickel, gold, silver, palladium, and the like. Suitable metals and metal alloys that can be electrolytically deposited include, but are not limited to: copper, tin, tin-lead, nickel, gold, silver, tin-antimony, tin-copper, tin-bismuth, tin-indium, tin -Silver, palladium and the like can be mentioned. Such metal plating baths are well known to those skilled in the art and are readily available from various sources such as Rohm and Haas.

  In one embodiment, metal deposits on semiconductor wafers are useful as solder bumps. Thus, the metal bumps are solderable metals and metal alloys such as tin, tin-lead, tin-copper, tin-silver, tin-bismuth, tin-copper-bismuth, tin-copper-silver, etc. Is preferred. Metals and metal alloys suitable for forming solder bumps are disclosed in US Pat. Nos. 5,186,383; 5,902,472; 5,990,564; 6,099,713; and 6,013, No. 572 as well as European Patent Application Publication No. EP 1148548 (Cheung et al.), All of which are incorporated herein by reference. Exemplary metals and metal alloys include, but are not limited to: tin; copper less than 2 wt%, preferably a tin-copper alloy having about 0.7 wt% copper; silver less than 20 wt%, preferably Is a tin-silver alloy having 3.5 to 10 wt% silver; 5 to 25 wt% bismuth, preferably a tin-bismuth alloy having about 20 wt% bismuth; and less than 5 wt% silver, preferably Included are tin-silver-copper alloys having about 3.5 wt% silver, less than 2 wt% copper, preferably about 0.7 wt% copper and the balance tin. In one embodiment, the metal alloy used for the solder bumps contains no lead, ie, the metal alloy contains no more than 10 ppm lead.

  In general, suitable electrolytic metal plating baths are acidic and soluble in acid, water, the soluble form of the metal (s) to be deposited, and optionally one or more organic additives such as brighteners (promoting agents Agents), carriers (inhibitors), levelers, ductility enhancers, wetting agents, bath stabilizers (especially for tin-containing baths), grain refiners and the like. The presence, type and amount of each optional component will vary depending on the particular metal plating bath used. Such metal plating baths are generally commercially available from, for example, the Shipley Company.

  In such a process, the resist composition acts as a protective layer to the areas not to be plated. After metal deposition, the remaining resist composition is stripped, such as by using a commercial N-methyl pyrrolidone (NMP) based stripper, at a temperature of about 40 ° C to 69 ° C. Suitable release agents are available from a variety of sources, such as Shipley-SVC, Sunnyvale, CA.

  All documents mentioned herein are incorporated herein by reference. The following non-limiting examples are illustrative of the invention.

Example 1 Resist Preparation A photoresist is prepared by mixing the following components (1-5 below), the amount being expressed as a weight percent of the total weight of the resist.
1. Resin The photoresist resin is based on the total weight of the fluid photoresist 10. Terpolymer of (2-methyl-2-adamantyl methacrylate / beta-hydroxy-gamma-butyrolactone methacrylate / cyanonorbornyl methacrylate) present at 80% by weight.
2. Photo acid generator compound (PAG)
PAG is t-butylphenyl tetramethylene sulfonium perfluorobutane sulfonate which is present at 2.5 weight percent of the total weight of the fluid photoresist.
3. Basic Additive The basic additive is N-alkylcaprolactam in an amount of 0.017% by weight based on the total weight of the photoresist composition.
4. Adhesion promoting component The adhesion promoting component is 3-glycidoxypropyltrimethoxysilane present in an amount of 2.5 percent by weight based on the total weight of the photoresist.
5. Solvent The solvent is ethyl lactate, which provides the balance of the resist.

Example 2 Lithographic Processing The formulated resist composition of Example 1 is spin coated on a SiON wafer surface and soft baked on a vacuum hotplate at 90 ° C. for 60 seconds. The resist coating layer is exposed at 193 nm through a photomask, and then the exposed coating layer is post-exposure baked at 110 ° C. The coated wafer is then treated with 0.26 N aqueous tetrabutylammonium hydroxide solution to develop the imaged resist layer.
After formation of the photoresist relief image, the substrate (with a resist mask) is subjected to a high energy (> 20 eV, reduced pressure environment) phosphorous ion implantation process.

Claims (5)

(A) applying on the substrate a photoresist comprising an adhesion promoting component comprising one or more Si-containing groups, a resin, and a photoactive component; and (b) activation radiation patterned on the photoresist coating layer. To expose;
A method of forming a photoresist relief image, comprising:   The method of claim 1, wherein the radiation is 193 nm.   The method according to claim 1 or 2, wherein the photoresist composition is applied on an inorganic surface.   A photoresist composition comprising a resin, a photoactive component, and an adhesion promoting component.   The adhesion promoting component is 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropyl (methyl) diethoxysilane, 3-glycidoxypropyl (dimethyl) ethoxysilane , N-butyltrimethoxysilane, n-octyltrimethoxysilane, 3- (pentafluorophenyl) propyltrimethoxysilane, 3-cyanopropyltrimethoxysilane, 1,8-bis (triethoxysilyl) octane, butanediol di The method according to any one of claims 1 to 3, selected from the group consisting of glycidyl ether and ethylhexyl glycidyl ether.