CN103839783B - The forming method of self-alignment duplex pattern - Google Patents
The forming method of self-alignment duplex pattern Download PDFInfo
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- CN103839783B CN103839783B CN201210477219.1A CN201210477219A CN103839783B CN 103839783 B CN103839783 B CN 103839783B CN 201210477219 A CN201210477219 A CN 201210477219A CN 103839783 B CN103839783 B CN 103839783B
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- 239000013047 polymeric layer Substances 0.000 claims abstract description 69
- 238000005530 etching Methods 0.000 claims abstract description 59
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 10
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- 238000006243 chemical reaction Methods 0.000 claims description 11
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
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- 241000208340 Araliaceae Species 0.000 description 1
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- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
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- 238000003475 lamination Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of forming method of self-alignment duplex pattern, including：Material layer to be etched is provided；Formed in the material layer to be etched and sacrifice photoresist layer；Polymeric layer is formed at the top of the sacrifice photoresist layer and sidewall surfaces；The first mask layer is formed in the polymer layer surface；First mask layer is etched back, the first mask layer positioned at the sacrifice photoresist layer both sides forms the first mask pattern.Due to sacrificing the top of photoresist layer and sidewall surfaces formation polymeric layer, the hardness of the polymeric layer is far longer than the hardness for sacrificing photoresist layer, so that the stress that the shape for sacrificing photoresist layer will not be produced because of the first mask layer is deformed upon, and the corner of the polymeric layer formed using depositing operation and etching technics is right angle so that the sidewall profile of final etched features is preferable.
Description
Technical field
The present invention relates to semiconductor technology, more particularly to a kind of forming method of self-alignment duplex pattern.
Background technology
In field of semiconductor manufacture, Other substrate materials are used to be transferred to mask image in one or more layers material layer,
For example mask image is transferred in metal level, dielectric layer or Semiconductor substrate.But with the characteristic size of semiconductor technology
Constantly reduce, forming the mask pattern of small characteristic size in material layer using photoetching process becomes more and more difficult.
In order to improve the integrated level of semiconductor devices, industry has been presented for various double-pattern techniques, wherein, autoregistration is double
Multigraph shape（Self-Aligned Double Patterning, SADP）Technique is one kind therein.Fig. 1 to Fig. 6 is existing
A kind of utilization self-alignment duplex pattern of technology is the method that mask is performed etching to semiconductor structure, is specifically included：
Refer to Fig. 1, there is provided Semiconductor substrate 10, material layer to be etched 20 is formed on the surface of Semiconductor substrate 10, in institute
State the surface of material layer to be etched 20 and form bottom anti-reflection layer 40, photoresist layer is formed on the surface of the bottom anti-reflection layer 40
50；
Fig. 2 is refer to, development is exposed to the photoresist layer, formed and sacrifice photoresist layer 55, with the sacrifice light
Photoresist layer 55 is mask, and bottom anti-reflection layer is performed etching, and is formed and sacrifices bottom anti-reflection layer 45；
Fig. 3 is refer to, hard mask layer 60 is formed in the material layer to be etched 20 and sacrifice photoresist layer 55 surface；
Refer to Fig. 4, the hard mask layer be etched back, until expose the surface of material layer to be etched 20 and
The top surface of photoresist layer 55 is sacrificed, is formed in the sacrifice photoresist layer 55, the sacrifice sidewall surfaces of bottom anti-reflection layer 45
Side wall 65；
Fig. 5 is refer to, the sacrifice photoresist layer is removed and is sacrificed bottom anti-reflection layer；
Fig. 6 is refer to, using the side wall 65 as mask, to the material layer to be etched 20（Refer to Fig. 5）Carved
Erosion.
More United States Patent (USP) texts that Publication No. US2009/0146322A1 is refer on self-alignment duplex pattern technique
Offer.
But inventor has found, using the above method etch the sidewall profile of the etched features that material layer to be etched is formed compared with
Difference.
The content of the invention
The problem that the present invention is solved is to provide a kind of forming method of self-alignment duplex pattern, the material to be etched for ultimately forming
The sidewall profile of the bed of material is preferable.
To solve the above problems, the invention provides a kind of forming method of self-alignment duplex pattern, including：There is provided to be etched
Corrosion material layer；Formed in the material layer to be etched and sacrifice photoresist layer；In the top of the sacrifice photoresist layer and side wall
Surface forms polymeric layer；The first mask layer is formed in the polymer layer surface；First mask layer is entered
Row is etched back to, the polymeric layer until exposing the sacrifice photoresist layer top surface, positioned at the sacrifice photoresist layer two
First mask layer of side forms the first mask pattern；Removal is described to sacrifice photoresist layer and polymeric layer.
Optionally, the technique for forming the polymeric layer includes：In the top of the sacrifice photoresist layer and sidewall surfaces
Polymeric layer is formed using depositing operation；Technique is performed etching to the polymeric layer, the polymeric layer of segment thickness is removed.
Optionally, repeated several times above-mentioned depositing operation and etching technics so that the corner of the polymeric layer of formation is
Right angle.
Optionally, the number of times of the repetition is 1 ~ 5.
Optionally, the depositing operation is plasma deposition process, is specifically included：Using at least including CH3F、CH2F2、
HBr、CH4One of which or several reacting gas are at the top of the sacrifice photoresist layer and sidewall surfaces form polymeric layer,
Wherein, the scope of radio-frequency power is 100 watts ~ 1000 watts, and the scope of reaction temperature is 30 degrees Celsius ~ 60 degrees Celsius, reaction chamber pressure
Strong scope is 100 millitorr ~ 200 millitorrs.
Optionally, the etching technics is plasma etch process, is specifically included：Using at least containing CF4、CHF3、
CH2F2、O2, Ar one of which etching gas polymeric layer is performed etching, the scope of radio-frequency power is 50 watts ~ 1000 watts, instead
It is 30 degrees Celsius ~ 60 degrees Celsius to answer the scope of temperature, and reaction chamber pressure range is 5 millitorr ~ 200 millitorrs.
Optionally, the material of first mask layer is silica, silicon nitride, silicon oxynitride, titanium nitride, tantalum nitride
It is therein one or more.
Optionally, the technique for forming first mask layer is atom layer deposition process, low-pressure chemical vapor deposition
Technique or sub- aumospheric pressure cvd technique.
Optionally, also include, the second mask layer is formed in the material surface to be etched, in second mask
Material surface is formed sacrifices photoresist layer.
Optionally, after removing the sacrifice bottom anti-reflection layer and sacrificing photoresist layer, it is with first mask pattern
Mask, performs etching to second mask layer, forms the second mask pattern.
Optionally, first mask pattern is removed, with second mask pattern as mask, to the corrosion material to be etched
Layer is performed etching.
Optionally, the material of second mask layer is silica, silicon nitride, carborundum, silicon oxynitride, amorphous
Carbon, polysilicon, hafnium oxide, titanium oxide, zirconium oxide, titanium nitride, tantalum nitride, titanium it is therein one or more.
Optionally, also include, with first mask pattern as mask, the material layer to be etched is performed etching.
Optionally, it is cineration technics to remove the photoresist layer and the technique of polymeric layer of sacrificing.
Optionally, the thickness range of the polymeric layer is 1 nanometer ~ 30 nanometers.
Compared with prior art, the present invention has advantages below：
The embodiment of the present invention forms sacrifice photoresist layer in the material layer to be etched, in the sacrifice photoresist layer
Top and sidewall surfaces form polymeric layer using depositing operation and etching technics, in the material layer to be etched, polymeric layer
Surface forms the first mask layer, first mask layer is etched back, until exposing the sacrifice photoetching
The polymeric layer of glue-line top surface, the first mask layer positioned at the sacrifice photoresist layer both sides forms the first mask figure
Shape.Due to foring polymeric layer at the top of the sacrifice photoresist layer and sidewall surfaces, the hardness of the polymeric layer is remote
Much larger than the hardness for sacrificing photoresist layer, the shape of polymeric layer is not allowed yielding so that the shape for sacrificing photoresist layer will not
Because the stress that the first mask layer is produced is deformed upon, the polymeric layer formed using depositing operation and etching technics is turned
Angle is right angle so that the sidewall profile of final etched features preferably, and by controlling the thickness of the polymeric layer, can be controlled
The spacing of the final etched features of system.
Brief description of the drawings
Fig. 1 to Fig. 6 is the cross-sectional view of the self-alignment duplex pattern technique of prior art；
Fig. 7 to Figure 16 is the cross-sectional view of the forming process of the self-alignment duplex pattern of the embodiment of the present invention.
Specific embodiment
Because the sidewall profile that the etched features that material layer to be etched is formed are etched using above-mentioned technology is poor, inventor's warp
Research is crossed to find, when hard mask layer is formed in the sacrificial material layer and sacrifice photoresist layer surface, the hard mask layer meeting
Stress is produced to sacrificing photoresist layer.Due to photoresist layer hardness less, even across sacrificing light after postexposure bake
Photoresist layer is also more soft, and the stress that the hard mask layer is produced can cause that sacrificing photoresist layer deforms, and it is class ladder to form section
The sacrifice photoresist layer of shape so that the side wall for sacrificing photoresist layer is not orthogonal to material surface to be etched so that be subsequently formed
Material surface to be etched is not orthogonal in the side wall of the sacrifice photoresist layer sidewall surfaces, influence finally treats etachable material
Layer performs etching the sidewall profile of the etched features to be formed.
Therefore, the present invention proposes a kind of forming method of self-alignment duplex pattern, the shape in the material layer to be etched
Into photoresist layer is sacrificed, form poly- using depositing operation and etching technics at the top of the sacrifice photoresist layer and sidewall surfaces
Compound layer, forms the first mask layer, to first mask layer in the material layer to be etched, polymer layer surface
It is etched back, the polymeric layer until exposing the sacrifice photoresist layer top surface, positioned at the sacrifice photoresist layer
First mask layer of both sides forms the first mask pattern.Due in the top of the sacrifice photoresist layer and sidewall surfaces shape
Into polymeric layer, the hardness of the polymeric layer is far longer than the hardness for sacrificing photoresist layer, and the shape of polymeric layer is not allowed
It is yielding so that the stress that sacrificing the shape of photoresist layer will not produce because of the first mask layer is deformed upon, and is utilized
The corner of the polymeric layer that depositing operation and etching technics are formed is right angle, does not interfere with the side wall shape of final etched features
Looks.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Elaborate detail in order to fully understand the present invention in the following description.But the present invention can with it is various not
It is same as other manner described here to implement, those skilled in the art can do class in the case of without prejudice to intension of the present invention
Like popularization.Therefore the present invention is not limited by following public specific implementation.
Fig. 7 to Figure 16 is refer to, is the structural representation of the forming process of the self-alignment duplex pattern of the embodiment of the present invention.
Refer to Fig. 7, there is provided Semiconductor substrate 100, material layer to be etched is formed on the surface of the Semiconductor substrate 100
110。
The Semiconductor substrate 100 is silicon substrate, germanium substrate, silicon-Germanium substrate, silicon-on-insulator substrate（SOI）, insulator
Upper germanium（GOI）The one kind therein such as substrate, glass substrate.The material layer to be etched 110 is silicon oxide layer, silicon nitride layer, many
Crystal silicon layer, low-K dielectric material, amorphous carbon, metal level etc. it is therein one or more.In the present embodiment, it is described to be etched
Material layer 110 is metal level, and the material of the metal level is aluminium, using self-alignment duplex pattern for mask enters to the metal level
Row etching forms metal interconnecting wires.In other embodiments, the material layer to be etched can also be Semiconductor substrate, using certainly
Alignment double-pattern is performed etching as mask to the Semiconductor substrate.
Fig. 8 is refer to, the second mask layer 120 is formed on the surface of material layer to be etched 110.
Second mask layer 120 be single layer structure or multilayer lamination structure, second mask layer 120
Material is silica, silicon nitride, carborundum, silicon oxynitride, amorphous carbon, polysilicon, hafnium oxide, titanium oxide, zirconium oxide, nitridation
One or more in titanium, tantalum nitride, titanium.In other embodiments, second mask layer can also be bottom anti-reflective
Penetrate layer.The technique for forming the second mask layer 120 is chemical vapor deposition method or physical gas-phase deposition.It is described
The material of the second mask layer 120 is different from the material of material layer to be etched 110, and both have etching selection ratio high, make
The second mask pattern for being formed of the second mask layer 120 described in later use treats etachable material layer 110 when performing etching
The loss of the second mask pattern is smaller, is conducive to controlling the pattern of etched features and the size for ultimately forming.And returned due to follow-up
The upper end for etching the first mask pattern for being formed is frequently not the rectangle of rule, with certain radian, directly using described
First mask pattern treats the sidewall profile that etachable material layer performs etching the etched features that can influence to ultimately form for mask, because
This, in the present embodiment, the second mask layer 120 is formed on the surface of material layer to be etched 110, and later use second is covered
After membrane layers 120 form the second mask pattern, removal is shaped as rule positioned at first mask pattern on its surface with the upper end
Then rectangular second mask pattern is mask, etches the material layer to be etched, is conducive to the etching figure for controlling to ultimately form
The pattern of shape.And in the present embodiment, second mask layer 120 includes amorphous carbon layer and positioned at the amorphous carbon
The silicon oxide layer of layer surface, when being performed etching to amorphous carbon layer due to dry etch process amorphous carbon layer sidewall profile compared with
It is good, and the silicon oxide layer is larger with the etching selection ratio of metal level, the metal level for being conducive to etch thicknesses larger.
Fig. 9 is refer to, bottom anti-reflection layer 130 is formed and positioned at bottom anti-reflective on the surface of material layer to be etched 120
Penetrate the sacrifice photoresist layer 145 on the surface of layer 130.
In the present embodiment, forming the bottom anti-reflection layer 130 and the technique of sacrifice photoresist layer 145 is：Using rotation
Turn coating technique and form bottom anti-reflection layer 130 on the surface of the second mask layer 120, in the bottom anti-reflection layer
130 surfaces form photoresist layer（It is not shown）, development is exposed to the photoresist layer and is formed and sacrifice photoresist layer 145.
In the present embodiment, formed and sacrifice not direct etching bottom anti-reflection layer 130 after photoresist layer 145, covered when being subsequently formed first
After film pattern, with first mask pattern as mask, then to the bottom anti-reflection layer 130, the second mask layer 120,
Material layer to be etched 110 is performed etching.
In other embodiments, formed after sacrificing photoresist layer, with the sacrifice photoresist layer as mask, etching bottom resists
Reflecting layer is formed sacrifices bottom anti-reflection layer, and the polymer being subsequently formed and the first mask pattern are located at sacrifice bottom anti-reflective
Penetrate layer and sacrifice the side wall of photoresist layer.
In other embodiments, the bottom anti-reflection layer can also be the bottom anti-reflection layer for being dissolved in developer solution, work as institute
When stating photoresist layer and being exposed development, while being also exposed development to bottom anti-reflection layer so that formed and sacrifice bottom and resist
Reflecting layer and sacrifice photoresist layer can be formed with a step, save processing step.
In other embodiments, it is also possible to do not form the bottom anti-reflection layer, in the second mask material layer surface
Photoresist layer is formed, and development is exposed to the photoresist layer, formed and sacrifice photoresist layer.
In other embodiments, it is also possible to do not form the second mask layer in the material surface to be etched, directly
Bottom anti-reflection layer and photoresist layer are formed in the material surface to be etched, and it is follow-up being formed in material layer to be etched
The first mask pattern be mask, the material layer to be etched is performed etching.
Figure 10 is refer to, polymerization is formed using depositing operation at the top of the sacrifice photoresist layer 145 and sidewall surfaces
Nitride layer 155.
In the present embodiment, the technique for forming the polymeric layer 155 is plasma deposition process, due to the sacrifice
The main element of photoresist layer includes C, therefore can form poly- on sacrifice photoresist layer 145 surface using plasma
Compound layer 155, the polymeric layer 155 has highly cross-linked network structure, and heat endurance, chemical stability and mechanics are strong
Degree, hardness are excellent.Because sacrifice photoresist layer 145 surface has high mechanical strength, hardness polymer high so that follow-up
The stress that the first mask layer for being formed is produced will not allow sacrifice photoresist layer to deform upon, the first mask figure being subsequently formed
Shape is vertical with semiconductor substrate surface, does not interfere with the sidewall profile of the etched features for ultimately forming.It is described plasma-deposited
Technique is specifically included：Reacting gas at least includes CH3F、CH2F2、HBr、CH4One of which is several, will by radio frequency power source
After the reacting gas is plasmarized, the plasma of the reacting gas occurs with the photoresist for sacrificing photoresist layer surface
Reaction, forms polymeric layer at the top of the sacrifice photoresist layer with sidewall surfaces, and the scope of radio-frequency power is 100 watts ~ 1000
Watt, the scope of reaction temperature is 30 degrees Celsius ~ 60 degrees Celsius, and reaction chamber pressure range is 100 millitorr ~ 200 millitorrs.
Figure 11 is refer to, the polymeric layer 155 to being formed performs etching technique, remove the polymeric layer of segment thickness.
Due to the possible became uneven of polymeric layer 155 using a plasma deposition process formation, and polymeric layer
155 corners are likely to more round and smooth so that the sidewall profile of the first mask pattern being subsequently formed is not good.Therefore, formed
After one layer of polymeric layer 155, the polymeric layer 155 of segment thickness is performed etching using etching technics so that after etching
The surface of polymeric layer 155 it is smooth, the corner of the polymeric layer 155 is changed into right angle.In the present embodiment, the etching technics
It is plasma etch process, specifically includes：CF will at least be contained by radio frequency power source4、CHF3、CH2F2、O2, Ar wherein
After the etching gas of kind are plasmarized, polymeric layer is performed etching using the plasma of the etching gas, radio frequency work(
The scope of rate is 50 watts ~ 1000 watts, and the scope of reaction temperature is 30 degrees Celsius ~ 60 degrees Celsius, and reaction chamber pressure range is 5 millitorrs
~ 200 millitorrs.
Conventionally, as the thickness of the first mask layer（That is the width of the first mask pattern）Corresponding to be etched
The width of the etched features of corrosion material layer, what the width of the etched features of the material layer to be etched was to determine, i.e. the first mask
What the thickness of material layer was to determine, the spacing between two the first mask patterns between adjacent sacrifice photoresist layer is depended on
Sacrifice the spacing between photoresist layer.And limited by existing photoetching process, the adjacent spacing sacrificed between photoresist layer
It is larger, therefore, in embodiments of the present invention, can be with deposited polymer layer process described in repeated several times and etch polymers layer
Technique, due to also containing carbon in the polymeric layer that is previously formed, using at least including CH3F、CH2F2、HBr、CH4Wherein one
The plasma of kind or several reacting gas further can react to form thicker polymer with the polymeric layer being previously formed
Layer, so as to control the thickness of polymeric layer for ultimately forming, and then controls adjacent two first sacrificed between photoresist layer
Spacing between mask pattern, the spacing between the etched features that control is ultimately formed.In the present embodiment, repeated deposition technique
It is 1 ~ 5 with the number of times of etching technics, the thickness range of the polymeric layer 155 for ultimately forming is 1 nanometer ~ 30 nanometers.
Figure 12 is refer to, top surface, sidewall surfaces in the surface of the bottom anti-reflection layer 130 and polymeric layer 155
Form the first mask layer 160.
The material of first mask layer 160 be silica, silicon nitride, silicon oxynitride, titanium nitride, tantalum nitride wherein
One or more.The material of first mask layer 160 and the second mask layer 120, bottom anti-reflection layer 130
Material is different, with etching selection ratio high so that the first mask figure that the first mask layer 160 described in later use is formed
The loss of the first mask pattern is smaller when shape is performed etching to bottom anti-reflection layer 130, the second mask layer 120, is conducive to
The pattern and size of the etched features that control is ultimately formed.
In other embodiments, when the bottom anti-reflection layer is formed directly into the material surface to be etched, institute
The material for stating the first mask layer is different from the material of material layer to be etched, and both have etching selection ratio high so that after
Continuous the first mask pattern formed using first mask layer treats the first mask figure when etachable material layer is performed etching
The loss of shape is smaller, is conducive to controlling the pattern of etched features and the size for ultimately forming.
Because first mask layer 160 is used to being formed the first mask pattern of self-alignment duplex pattern, described the
The width of one mask pattern depends on the thickness of the first mask layer 160 of the sidewall surfaces of polymeric layer 155, therefore, lead to
Cross the thickness for controlling first mask layer 160, it is possible to the width of the etched features that control is ultimately formed.It is of the invention real
The technique for applying first mask layer of example formation is atom layer deposition process, low-pressure chemical vapor deposition process or sub- normal
Pressure chemical vapor deposition technique.Because the sedimentation rate of above-mentioned several depositing operations is slower, the first mask layer of formation is equal
Even property is preferably, smooth vertical positioned at the side wall of the first mask layer 160 of the sidewall surfaces of the polymeric layer 155, pattern
Preferably so that the sidewall profile of the first mask pattern being subsequently formed is mask to second with first mask pattern preferably
When mask layer or material layer to be etched are performed etching, the pattern for etching the figure for being formed is preferable.
In the present embodiment, using atom layer deposition process in the surface of the bottom anti-reflection layer 130 and polymeric layer 155
Top, sidewall surfaces form silicon oxide layer, because the temperature of the atom layer deposition process is relatively low, temperature range is 20 Celsius
Degree will not produce harmful effect to 100 degrees Celsius to described other semiconductor structures.
Figure 13 is refer to, to first mask layer 160（With reference to Figure 12）It is etched back, it is described until exposing
The surface of bottom anti-reflection layer 130 and the polymeric layer 155 positioned at sacrifice photoresist layer 145 surface, positioned at the polymeric layer 155
First mask layer 160 of sidewall surfaces forms the first mask pattern 165.
The width of first mask pattern 165 is corresponding with the thickness of the first mask layer 160.When the sacrifice light
Photoresist layer 145 and polymeric layer 155 overlook when being shaped as strip of visual angle, and first mask pattern 165 is shaped as
Around the annular mask pattern for sacrificing photoresist layer 145, polymeric layer 155, in the present embodiment, due to the etching for ultimately forming
Figure is metal interconnecting wires, after the sacrifice photoresist layer is subsequently removed, recycles photoresist covering strip zone line
Corresponding first mask pattern, exposes corresponding first mask pattern in strip two ends, is removed by mask of the photoresist
Corresponding first mask pattern in the strip two ends so that first mask pattern is changed into the straight line or broken line of bar shaped.
Figure 14 is refer to, using the cineration technics removal sacrifice photoresist layer 145（Refer to Figure 13）And polymeric layer
155（Refer to Figure 13）.
It is described because the material of the polymeric layer and photoresist layer is made up of the organic matter that the elements such as C, O, H, N are constituted
The reacting gas of cineration technics is O2, by the oxygen gas plasma, and utilize the oxygen gas plasma and polymeric layer
155 react with the organic matter for sacrificing photoresist layer 145, form volatile carbon monoxide, carbon dioxide, water etc. main raw
Into thing, so as to remove the polymeric layer 155 and sacrifice photoresist layer 145.In other embodiments, the cineration technics is anti-
Answering gas can also include N2Or H2Deng the N2Or H2Be conducive to improving removal polymeric layer, sacrifice the ability of photoresist layer.
Figure 15 is refer to, with first mask pattern 165 as mask, to the bottom anti-reflection layer 130（Refer to figure
14）, the second mask layer 120（Refer to Figure 14）Dry etching is carried out, formation sacrifice bottom anti-reflection layer 135, second are covered
Film pattern 125.
Because the upper end of the first mask pattern for being etched back to be formed is frequently not the rectangle of rule, with certain arc
Degree, directly treats etachable material layer and performs etching the etching figure that can influence to ultimately form using first mask pattern for mask
The sidewall profile of shape, therefore, in the present embodiment, after forming the second mask pattern 125, first mask of the removal positioned at its surface
Figure 165, sacrifice bottom anti-reflection layer 135, the second mask pattern 125 of regular oblong is shaped as to cover with the upper end
Film, etches the material layer to be etched 110, is conducive to controlling the pattern of etched features for ultimately forming.
In other embodiments, removal is after first mask pattern on its surface, it is also possible to anti-with the sacrifice bottom
Reflecting layer is mask, etches the material layer to be etched, forms etched features.
Figure 16 is refer to, first mask pattern 165 is removed（With reference to Figure 15）With sacrifice bottom anti-reflection layer 135（Ginseng
Examine Figure 15）, with second mask pattern 125 as mask, the material layer to be etched 110 is performed etching（With reference to Figure 15）,
Form the etched features 115 of self-alignment duplex pattern.
In the present embodiment, the technique for removing first mask pattern 165 and sacrificing bottom anti-reflection layer 135 is wet method
Etching.Because the width of the etched features 115 is determined according to the thickness of the first mask layer, first mask layer
Thickness can be less than existing process photoetching, the minimum dimension of etching technics so that the width of the etched features 115 is less than
The width of the figure formed using photoetching process, and the width of polymeric layer ultimately formed by control, can control adjacent
Etched features 115 between spacing so that the figure for being smaller than being formed using photoetching process of adjacent etched figure 115
Spacing, is conducive to improving the integrated level of integrated circuit.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and techniques content of the disclosure above to this hair
Bright technical scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Any simple modification, equivalent variation and modification for being made to above example of technical spirit, belong to technical solution of the present invention
Protection domain.
Claims (15)
1. a kind of forming method of self-alignment duplex pattern, it is characterised in that including：
Material layer to be etched is provided；
Formed in the material layer to be etched and sacrifice photoresist layer；
Polymeric layer is formed at the top of the sacrifice photoresist layer and sidewall surfaces, the polymeric layer causes what is be subsequently formed
The stress that first mask layer is produced will not allow sacrifice photoresist layer to deform upon；
The first mask layer is formed in the polymer layer surface；
First mask layer is etched back, the polymer until exposing the sacrifice photoresist layer top surface
Layer, the first mask layer positioned at the sacrifice photoresist layer both sides forms the first mask pattern；
Removal is described to sacrifice photoresist layer and polymeric layer.
2. the forming method of self-alignment duplex pattern as claimed in claim 1, it is characterised in that form the polymeric layer
Technique includes：At the top of the sacrifice photoresist layer and sidewall surfaces polymeric layer is formed using depositing operation；To described poly-
Compound layer performs etching technique, removes the polymeric layer of segment thickness.
3. the forming method of self-alignment duplex pattern as claimed in claim 2, it is characterised in that above-mentioned heavy of repeated several times
Product technique and etching technics so that the corner of the polymeric layer of formation is right angle.
4. the forming method of self-alignment duplex pattern as claimed in claim 3, it is characterised in that the number of times of the repetition is 1
~5.
5. the forming method of self-alignment duplex pattern as claimed in claim 2, it is characterised in that the depositing operation for wait from
Daughter depositing operation, specifically includes：Using at least including CH3F、CH2F2、HBr、CH4One of which or several reacting gas exist
The sacrifice photoresist layer top and sidewall surfaces form polymeric layer, wherein, the scope of radio-frequency power is 100 watts~1000
Watt, the scope of reaction temperature is 30 degrees Celsius~60 degrees Celsius, and reaction chamber pressure range is 100 millitorr~200 millitorrs.
6. the forming method of self-alignment duplex pattern as claimed in claim 2, it is characterised in that the etching technics for wait from
Daughter etching technics, specifically includes：Using at least containing CF4、CHF3、CH2F2、O2, Ar one of which etching gas to polymerization
Nitride layer is performed etching, and the scope of radio-frequency power is 50 watts~1000 watts, and the scope of reaction temperature is 30 degrees Celsius~60 degrees Celsius,
Reaction chamber pressure range is 5 millitorr~200 millitorrs.
7. the forming method of self-alignment duplex pattern as claimed in claim 1, it is characterised in that first mask layer
Material be silica, silicon nitride, silicon oxynitride, titanium nitride, tantalum nitride it is therein one or more.
8. the forming method of self-alignment duplex pattern as claimed in claim 1, it is characterised in that form the first mask material
The technique of the bed of material is atom layer deposition process, low-pressure chemical vapor deposition process or sub- aumospheric pressure cvd technique.
9. the forming method of self-alignment duplex pattern as claimed in claim 1, it is characterised in that also include, described to be etched
Corrosion material layer surface forms the second mask layer, is formed in the second mask material layer surface and sacrifices photoresist layer.
10. the forming method of self-alignment duplex pattern as claimed in claim 9, it is characterised in that the removal sacrifice photoetching
After glue-line, with first mask pattern as mask, second mask layer is performed etching, form the second mask figure
Shape.
The forming method of 11. self-alignment duplex patterns as claimed in claim 10, it is characterised in that removal first mask
Figure, with second mask pattern as mask, performs etching to the material layer to be etched.
The forming method of 12. self-alignment duplex patterns as claimed in claim 9, it is characterised in that second mask material
Layer material for silica, silicon nitride, carborundum, silicon oxynitride, amorphous carbon, polysilicon, hafnium oxide, titanium oxide, zirconium oxide,
Titanium nitride, tantalum nitride, titanium it is therein one or more.
The forming method of 13. self-alignment duplex patterns as claimed in claim 1, it is characterised in that also include, with described first
Mask pattern is mask, and the material layer to be etched is performed etching.
The forming method of 14. self-alignment duplex patterns as claimed in claim 1, it is characterised in that the removal sacrifice photoetching
The technique of glue-line and polymeric layer is cineration technics.
The forming method of 15. self-alignment duplex patterns as claimed in claim 1, it is characterised in that the thickness of the polymeric layer
Degree scope is 1 nanometer~30 nanometers.
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| US9390909B2 (en) * | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
| CN105336571B (en) * | 2014-07-28 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | The forming method of autoregistration multiple graphics mask |
| CN105719954B (en) * | 2014-12-04 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
| CN107968046B (en) * | 2016-10-20 | 2020-09-04 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN111696862B (en) * | 2019-03-12 | 2023-07-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN110459465B (en) * | 2019-08-30 | 2022-03-04 | 上海华力微电子有限公司 | Method for forming self-aligned double-layer pattern |
| CN113035694B (en) * | 2019-12-25 | 2024-09-10 | 中微半导体设备(上海)股份有限公司 | Etching method |
| CN113496875A (en) * | 2020-04-01 | 2021-10-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and method for forming semiconductor structure |
| US20220359201A1 (en) * | 2021-05-06 | 2022-11-10 | Applied Materials, Inc. | Spacer patterning process with flat top profile |
| CN113488474A (en) * | 2021-07-15 | 2021-10-08 | 广东省大湾区集成电路与系统应用研究院 | High-density static random access memory bit cell structure and process method thereof |
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