CN111474833A - Photoetching wetting liquid and application thereof - Google Patents
Photoetching wetting liquid and application thereof Download PDFInfo
- Publication number
- CN111474833A CN111474833A CN202010472741.5A CN202010472741A CN111474833A CN 111474833 A CN111474833 A CN 111474833A CN 202010472741 A CN202010472741 A CN 202010472741A CN 111474833 A CN111474833 A CN 111474833A
- Authority
- CN
- China
- Prior art keywords
- fountain solution
- photoetching
- lithographic fountain
- water
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001259 photo etching Methods 0.000 title abstract description 27
- 238000009736 wetting Methods 0.000 title abstract description 22
- 239000007788 liquid Substances 0.000 title abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 18
- 239000003513 alkali Substances 0.000 claims abstract description 15
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims abstract description 12
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229920005682 EO-PO block copolymer Polymers 0.000 claims abstract description 9
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 8
- 239000012190 activator Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical group CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 18
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 230000000844 anti-bacterial effect Effects 0.000 claims description 9
- 239000003899 bactericide agent Substances 0.000 claims description 9
- 239000002202 Polyethylene glycol Substances 0.000 claims description 8
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 8
- 229920001223 polyethylene glycol Polymers 0.000 claims description 8
- -1 guanidine organic base Chemical class 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 150000007530 organic bases Chemical class 0.000 claims description 4
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229940123208 Biguanide Drugs 0.000 claims description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 150000004283 biguanides Chemical group 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims 2
- 125000004193 piperazinyl group Chemical group 0.000 claims 1
- 239000013543 active substance Substances 0.000 abstract description 6
- 239000006260 foam Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 241000894006 Bacteria Species 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003381 solubilizing effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229940058302 antinematodal agent piperazine and derivative Drugs 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a photoetching wetting liquid, which contains water, organic alkali and an active agent; the organic alkali is guanidine organic alkali or piperazine organic alkali; the activator is a composition of an EO/PO block copolymer and a water-soluble polymer. The photoetching wetting liquid is suitable for 45 nm, especially 14nm and below photoetching process, can further reduce the collapse rate of the photoresistance and improve the roughness of the pattern, forms more precise and complete photoresistance pattern, achieves the technical index of the process requirement, and improves the yield and the reliability.
Description
Technical Field
The invention relates to a photoetching wetting liquid and application thereof.
Background
The photoetching process plays a crucial role in the manufacture of semiconductor chips, and mainly comprises steps of photoresist spin coating, exposure, development, cleaning and the like, the photoetching process before 14nm can enter the next procedure after being directly spin-dried by ultrapure water after development, but with the rapid improvement of technical nodes and integration level, the extreme miniaturization of patterns not only raises higher requirements on the performance of the photoresist, but also makes more strict requirements on the photoresist patterns after development, especially 14nm and the following process nodes, with the extreme reduction of line width and the increase of depth-to-width ratio, defects are easily caused by collapse of the photoresist, and in addition, the line edge roughness L ER (line edge roughness) and L WR (line width roughness) after exposure also need to be controlled more precisely so as to avoid the deterioration of yield.
Disclosure of Invention
In order to further reduce the collapse rate of the light resistance and improve the roughness of the pattern so as to form a more fine and complete light resistance pattern, achieve the technical index of the process requirement and improve the yield and the reliability, the invention provides a photoetching wetting liquid, which contains water, organic alkali and an active agent; the organic alkali is guanidine organic alkali or piperazine organic alkali; the activator is a composition of an EO/PO block copolymer and a water-soluble polymer.
Preferably, the guanidine organic base is selected from monoguanidine and derivatives thereof, and the chemical structural formula is as follows:
wherein, R1, R2, R3 are each independently H, hydrocarbyl, or heterocyclic substituent;
or the guanidine organic base is selected from biguanide and derivatives thereof, and the chemical structural formula is as follows:
wherein Ra, Rb, Rc, Rd are each independently H, a hydrocarbyl group, an aromatic group, or a heterocyclic substituent.
Preferably, the piperazine organic base is selected from piperazine and derivatives thereof, and the chemical structural formula is as follows:
wherein Rs1, Rs2 are each independently H, methyl, ethyl, amino, hydroxymethyl, or hydroxyethyl.
Preferably, the EO/PO block copolymer has the formula:
RO-[-(EO)m(PO)n-]-H
wherein R is a hydrocarbon chain with 5-20 carbon atoms, m is the number of EO repeating units, n is the number of PO repeating units, and the sum of m and n is less than 20;
the water-soluble polymer is polyethylene glycol (PEG); the molecular weight of the polyethylene glycol is 200-600.
Preferably, the organic base is contained in an amount of 0.05 to 1% by mass (more preferably 0.05 to 0.1%) by mass, the EO/PO block copolymer is contained in an amount of 0.001 to 1% by mass (more preferably 0.02 to 0.1%) by mass, and the water-soluble polymer is contained in an amount of 0.001 to 1% by mass (more preferably 0.01 to 0.05%) by mass.
Preferably, the photoetching wetting liquid also contains a high-boiling-point organic solvent; the high boiling point organic solvent is selected from propylene glycol, ethylene glycol, propylene glycol and glycerol; the content of the high-boiling-point organic solvent is 0.5-5% (more preferably 1.0-2.0%) by mass.
Preferably, the photoetching wetting liquid also contains a mildew-proof bactericide; the mildew-proof bactericide is a quaternary ammonium salt bactericide; the mass percentage of the mildew-proof bactericide is 0.001-0.005%.
The invention also provides a semiconductor photoetching process, after the photoresistance is developed, the photoetching wetting liquid is adopted to spin-wash the surface of the photoresistance, so as to remove impurities in the structure and form clear and complete photoresistance patterns.
The 14nm and below photoetching process has higher requirements on the collapse rate and the intra-cluster roughness, particularly the 7 nm technology photoetching process, the formula of the photoresist is changed, and the collapse rate and the surface roughness caused by the fine pattern become more and more key factors influencing the yield, so that the performance needs to be further improved to meet the more advanced process. The method of forming a pattern on a silicon substrate of the present invention is as follows: firstly, spin-coating a photoresist material on a substrate to form a film, then exposing and developing, and then processing by using the photoetching wetting liquid to obtain a cleaning pattern. The photoetching wetting liquid is suitable for 45 nm, especially 14nm and below photoetching process, can further reduce the collapse rate of the photoresistance and improve the roughness of the pattern, forms more precise and complete photoresistance pattern, achieves the technical index of the process requirement, and improves the yield and the reliability. The photoetching wetting liquid has outstanding cost performance, and all the additives are environment-friendly additives and can be biodegraded.
Organic alkali (guanidine organic alkali or piperazine organic alkali) is added into the formula of the photoetching wetting liquid, and the organic alkali can generate cross-linking reaction with functional groups on the surface of the photoresistor, so that the mechanical property of the surface of the photoresistor is improved, collapse or deformation is avoided, and the collapse rate can be improved.
The EO/PO segmented copolymer is added into the formula of the photoetching wetting liquid, so that the dynamic and static surface tension of the wetting liquid can be reduced, the deformation and the breakage of a light resistance caused by a capillary phenomenon are eliminated, and the collapse rate is reduced.
The water-soluble polymer (polyethylene glycol) is added into the formula of the photoetching wetting liquid, so that the effect of solubilizing the active agent can be achieved, and the solubility and uniformity of the active agent are improved.
The high boiling point organic solvent (propylene glycol, ethylene glycol, propylene glycol and glycerol) is added into the formula of the photoetching wetting liquid, so that the dual functions of defoaming and dissolving assisting can be achieved, and the surface tension fluctuation caused by foam can be further inhibited.
The formula of the photoetching wetting liquid is added with the mildew-proof bactericide (quaternary ammonium salt bactericide) to prevent bacteria and mildew from forming in a high-temperature and high-humidity environment, and the aim of sterilizing is achieved by inhibiting the growth environment of the bacteria through the chamber resistance generated by the comprehensive action of electrostatic force, hydrogen bonds and active agent molecule protein molecules.
The photoetching wetting liquid avoids the influence of capillary phenomenon by changing the surface tension, enhances the mechanical strength of the photoresistor at the same time, further avoids the collapse of the photoresistor, and slightly changes the appearance of the surface of the photoresistor after the surface of the photoresistor is contacted by the active agent, thereby improving the roughness.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The forming method of forming the photoresist pattern on the silicon substrate comprises the following steps: spin coating a photoresist material on a silicon substrate to form a film, using an ArF ultraviolet light source or an electron beam light source for exposure, baking and developing, and further using the photoetching wetting liquid for treatment. The size of the finally formed pattern (including line width, space width, plug through hole and connecting through hole) is 7 nm, the collapse rate and surface roughness of the pattern area are obviously improved, and specific test results are shown in table 1.
Table 1 test results of collapse Rate and surface roughness of Pattern region
In table 1:
the percentage contents are all mass percentage contents.
The general formula of the EO/PO block copolymer is as follows: RO- [ - (EO) m (PO) n- ] -H; wherein R is a hydrocarbon chain having 5 to 20 carbon atoms, m is the number of repeating units of EO, n is the number of repeating units of PO, and the sum of m and n is less than 20.
The collapse rate of the photoresist: the ratio of collapse rates of the photoresist after wetting and cleaning with different aspect ratios is defined, and the larger the aspect ratio is, the smaller the collapse rate is, which indicates that the technical effect of the photoetching wetting liquid is better;
a: the depth-to-width ratio is 5, and the collapse rate of the light resistor is obviously improved;
b: the depth-to-width ratio is more than 3 and less than 5, and the collapse rate of the light resistance is obviously improved;
c: the depth-to-width ratio is less than 3, and the collapse rate of the photoresistance is obviously improved.
Line deviation: the line width deviation of dense lines and sparse lines after exposure is referred to;
d1: the deviation meets the process requirements;
d2, deviation exists, but the process requirement is basically met;
d3: the deviation is large and can not meet the process requirement.
Hole roundness: the shape deviation degree of the fine hole and the roughness of the edge are shown;
y1: the roundness reaches the standard, and the edge is clear;
y2; the roundness has a small deviation and the edge is clear;
y3: the roundness deviation is large, and the edge is fuzzy.
Surface roughness: it means the roughness and fineness of the end face of the line;
r1: the roughness meets the process requirements;
r2: the roughness is slightly poor, but the yield is not influenced;
r3: the roughness is poor and can not meet the process requirement.
In addition, the solubilizing and foam suppressing effects of PEG and glycerol are shown in table 2:
TABLE 2 solubilization and foam inhibition of PEG and Glycerol
In table 2:
the percentage contents are all mass percentage contents.
The general formula of the EO/PO block copolymer is as follows: RO- [ - (EO) m (PO) n- ] -H; wherein R is a hydrocarbon chain having 5 to 20 carbon atoms, m is the number of repeating units of EO, n is the number of repeating units of PO, and the sum of m and n is less than 20.
Solubility:
a: insufficient dissolution and oil content; b: the solubility is improved; c: a true solution was formed.
Foaming:
a: the foam is heavy; b: improving foam; c: substantially free of foam.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A lithographic fountain solution comprising water, an organic base, and an activator;
the organic alkali is guanidine organic alkali or piperazine organic alkali;
the activator is a composition of an EO/PO block copolymer and a water-soluble polymer.
2. The lithographic fountain solution of claim 1, wherein the guanidine organic base is selected from the group consisting of monoguanidine and its derivatives, and has the following chemical formula:
wherein, R1, R2, R3 are each independently H, hydrocarbyl, or heterocyclic substituent;
or the guanidine organic base is selected from biguanide and derivatives thereof, and the chemical structural formula is as follows:
wherein Ra, Rb, Rc, Rd are each independently H, a hydrocarbyl group, an aromatic group, or a heterocyclic substituent.
3. The lithographic fountain solution of claim 1, wherein the piperazine-based organic base is selected from piperazine and its derivatives, and has the following chemical formula:
wherein Rs1, Rs2 are each independently H, methyl, ethyl, amino, hydroxymethyl, or hydroxyethyl.
4. The lithographic fountain solution of claim 1, wherein the EO/PO block copolymer has the following general formula:
RO-[-(EO)m(PO)n-]-H
wherein R is a hydrocarbon chain with 5-20 carbon atoms, m is the number of EO repeating units, n is the number of PO repeating units, and the sum of m and n is less than 20;
the water-soluble polymer is polyethylene glycol; the molecular weight of the polyethylene glycol is 200-600.
5. The lithographic fountain solution of claim 1, wherein the organic base is present in an amount of 0.05 to 1% by mass, the EO/PO block copolymer is present in an amount of 0.001 to 1% by mass, and the water-soluble polymer is present in an amount of 0.001 to 1% by mass.
6. The lithographic fountain solution of claim 1, further comprising a high boiling point organic solvent; the high boiling point organic solvent is selected from propylene glycol, ethylene glycol, propylene glycol and glycerol.
7. The lithographic fountain solution of claim 6, wherein the high boiling point organic solvent is present in an amount of 0.5-5% by weight.
8. The lithographic fountain solution of claim 1, further comprising a mildewcide; the mildew-proof bactericide is a quaternary ammonium salt bactericide.
9. The lithographic fountain solution of claim 8, wherein the anti-mold bactericide is present in an amount of 0.001-0.005% by weight.
10. A semiconductor lithography process, characterized in that after developing a photoresist, the photoresist surface is spin-washed using the lithography fountain solution of any one of claims 1 to 9 to remove impurities in the structure and form a clear and complete photoresist pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010472741.5A CN111474833A (en) | 2020-05-29 | 2020-05-29 | Photoetching wetting liquid and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010472741.5A CN111474833A (en) | 2020-05-29 | 2020-05-29 | Photoetching wetting liquid and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111474833A true CN111474833A (en) | 2020-07-31 |
Family
ID=71763657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010472741.5A Pending CN111474833A (en) | 2020-05-29 | 2020-05-29 | Photoetching wetting liquid and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111474833A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080199814A1 (en) * | 2006-12-06 | 2008-08-21 | Fujifilm Electronic Materials, U.S.A., Inc. | Device manufacturing process utilizing a double patterning process |
| CN103165533A (en) * | 2013-03-15 | 2013-06-19 | 上海华力微电子有限公司 | Process method for preventing defects of photoresist during wet etching |
| CN103186038A (en) * | 2011-12-31 | 2013-07-03 | 罗门哈斯电子材料有限公司 | Photoresist pattern trimming methods |
| CN103197513A (en) * | 2013-03-15 | 2013-07-10 | 上海华力微电子有限公司 | Technical method for preventing photoresist from generating defects during wet etching |
| CN103258733A (en) * | 2013-03-15 | 2013-08-21 | 上海华力微电子有限公司 | Technological method capable of preventing shortcomings on photoresist during wet etching |
| CN103258795A (en) * | 2013-03-15 | 2013-08-21 | 上海华力微电子有限公司 | Technological method capable of preventing shortcomings on photoresist during wet etching |
| US20140256155A1 (en) * | 2013-03-11 | 2014-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning Solution for Preventing Pattern Collapse |
| CN106353976A (en) * | 2015-07-17 | 2017-01-25 | 荣昌化学制品株式会社 | Cleaning composition for photolithography and method of forming photoresist pattern using the same |
-
2020
- 2020-05-29 CN CN202010472741.5A patent/CN111474833A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080199814A1 (en) * | 2006-12-06 | 2008-08-21 | Fujifilm Electronic Materials, U.S.A., Inc. | Device manufacturing process utilizing a double patterning process |
| CN103186038A (en) * | 2011-12-31 | 2013-07-03 | 罗门哈斯电子材料有限公司 | Photoresist pattern trimming methods |
| US20140256155A1 (en) * | 2013-03-11 | 2014-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning Solution for Preventing Pattern Collapse |
| CN103165533A (en) * | 2013-03-15 | 2013-06-19 | 上海华力微电子有限公司 | Process method for preventing defects of photoresist during wet etching |
| CN103197513A (en) * | 2013-03-15 | 2013-07-10 | 上海华力微电子有限公司 | Technical method for preventing photoresist from generating defects during wet etching |
| CN103258733A (en) * | 2013-03-15 | 2013-08-21 | 上海华力微电子有限公司 | Technological method capable of preventing shortcomings on photoresist during wet etching |
| CN103258795A (en) * | 2013-03-15 | 2013-08-21 | 上海华力微电子有限公司 | Technological method capable of preventing shortcomings on photoresist during wet etching |
| CN106353976A (en) * | 2015-07-17 | 2017-01-25 | 荣昌化学制品株式会社 | Cleaning composition for photolithography and method of forming photoresist pattern using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101963755B (en) | Self-aligned spacer multiple patterning methods | |
| TWI357539B (en) | ||
| CN101076759B (en) | Cleaning liquid for lithography and method for resist pattern formation | |
| EP1152036B1 (en) | Method for forming a fine resist pattern applying a water-soluble resin composition | |
| CN109075035A (en) | Treatment fluid and treatment fluid host body | |
| TWI619808B (en) | Rinse solution for lithography and pattern formation method employing the same | |
| TWI605117B (en) | Cleaning composition for photolithography and method of forming photoresist pattern using the same | |
| KR102083151B1 (en) | Rinse composition, method of forming resist pattern, and method of manufacturing semiconductor device | |
| KR100858594B1 (en) | Resist pattern forming method and composite rinse agent | |
| JP4767829B2 (en) | Lithographic cleaning agent and resist pattern forming method using the same | |
| US20060128581A1 (en) | Lithographic rinse solution and method for forming patterned resist layer using the same | |
| CN105190445A (en) | Rinsing liquid for lithography and pattern forming method using same | |
| CN101010639A (en) | Rinsing liquid for lithography and method for resist pattern formation | |
| JP2005220350A (en) | Cleaning liquid composition and method for cleaning semiconductor device using the same | |
| JP2023519537A (en) | Electronic device manufacturing aqueous solution, resist pattern manufacturing method, and device manufacturing method | |
| CN111474833A (en) | Photoetching wetting liquid and application thereof | |
| KR102107367B1 (en) | Compositions for anti pattern collapse treatment comprising gemini additives | |
| US20120228747A1 (en) | Resist pattern improving material, method for forming resist pattern, method for producing semiconductor device, and semiconductor device | |
| KR101759571B1 (en) | Developer composition for forming photosensitive photoresist pattern for extreme ultraviolet | |
| CN104471487B (en) | For manufacturing IC apparatus, Optical devices, micromechanics and the composition of mechanical precision apparatus | |
| CN108475022A (en) | LWR ameliorative ways and composition in the Patternized technique using negative photoresist |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yu Wei Inventor after: Song Weihong Inventor before: Song Weihong Inventor before: Yu Wei |
|
| CB03 | Change of inventor or designer information | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200731 |
|
| WD01 | Invention patent application deemed withdrawn after publication |