WO2008069429A1 - Électrode ohmique, procédé associé et élément électroluminescent semi-conducteur contenant ladite électrode ohmique - Google Patents

Électrode ohmique, procédé associé et élément électroluminescent semi-conducteur contenant ladite électrode ohmique Download PDF

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Publication number
WO2008069429A1
WO2008069429A1 PCT/KR2007/004980 KR2007004980W WO2008069429A1 WO 2008069429 A1 WO2008069429 A1 WO 2008069429A1 KR 2007004980 W KR2007004980 W KR 2007004980W WO 2008069429 A1 WO2008069429 A1 WO 2008069429A1
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WO
WIPO (PCT)
Prior art keywords
layer
light emitting
ohmic electrode
contact
semiconductor
Prior art date
Application number
PCT/KR2007/004980
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English (en)
Inventor
Jong Lam Lee
Sang Han Lee
Original Assignee
Postech Academy-Industry Foundation
Seoul Opto-Device Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060121597A external-priority patent/KR100845037B1/ko
Application filed by Postech Academy-Industry Foundation, Seoul Opto-Device Co., Ltd. filed Critical Postech Academy-Industry Foundation
Priority to US12/517,321 priority Critical patent/US8093618B2/en
Publication of WO2008069429A1 publication Critical patent/WO2008069429A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Definitions

  • the present invention relates to an ohmic electrode, a method of forming the same and a semiconductor light emitting element having the same, and more particularly, to an ohmic electrode formed in contact with a region of a light emitting layer such that external operation power can be provided to the light emitting layer for emitting light, a method of forming the ohmic electrode, and a semiconductor light emitting element having the ohmic electrode.
  • a semiconductor light emitting elements has small size, lightweight, low power consumption and long life span, and does not require preheating time and driving circuits. Further, since the semiconductor light emitting element is resistant to impact and vibration and can be packaged into various shapes, the semiconductor light emitting element is expected to substitute for a backlight of a large-sized liquid crystal display, a general illuminator and a light source for a vehicle headlight within next few years.
  • a nitride-based semiconductor light emitting element has excellent characteristics of electron affinity, electron mobility, electron saturation velocity and electric field breakdown voltage, so that high efficiency and high power can be implemented. Since the nitride -based semiconductor light emitting element does not contain harmful substance such as As or Hg, it has been noticed as an environment- friendly element.
  • nitride semiconductor light emitting elements that have been developed up to now are still unsatisfactory in view of high power, light emitting efficiency and price, and their performance should be more improved.
  • the light emitting elements in order for the light emitting elements to substitute for conventional mercury lamps and fluorescent lamps, a problem of high power and thermal stability in accordance therewith should be solved.
  • a nitride semiconductor light emitting element is fabricated by sequentially laminating a nitride n-type layer, a nitride active layer and a nitride p-type layer, and then disposing two electrodes horizontally so as to apply power to the n-type and p-type layers.
  • a light emitting element with vertical structures and flip-chip type light emitting elements have been suggested.
  • a reflective layer is formed on any one electrode to allow light generated from an active layer to be easily emitted to the outside, whereby utilization efficiency of the light can be enhanced.
  • a metal substrate with excellent thermal conductivity is used in place of a sapphire substrate, so that the thermal stability can be enhanced.
  • the present invention is provided to solve the aforementioned problems.
  • the present invention provides an ohmic electrode, a method of forming the ohmic electrode and a semiconductor light emitting element having the ohmic electrode, wherein a contact layer formed of an Al alloy, a reflective layer formed of Ag metal and a protective layer for restraining out-diffusion of the Ag reflective layer are sequentially laminated on a light emitting layer for emitting light; heat treatment is then performed to form an ohmic contact while some particles in the reflective layer are diffused towards the light emitting layer and the contact layer and protective layer restrain excessive diffusion of the reflective layer; and the ohmic electrode thereby has low contact resistance together with strong adhesive strength, and excellent thermal stability together with high light reflectance.
  • an ohmic electrode comprising: a contact layer made of an Al alloy and formed on a nitride-based semiconductor layer functioning as a light emitting layer; a reflective layer made of Ag metal, formed on the contact layer and having some particles in- diffused to the semiconductor layer; and a protective layer formed on the reflective layer to restrain out-diffusion of the reflective layer.
  • the contact layer may be 2 to 5nm in thickness
  • the reflective layer may be 150 to
  • the protective layer may be 40 to lOOnm in thickness.
  • the contact layer may be formed of an alloy containing Al metal and any one metal selected from Mg, Cu, In and Sn, and the protective layer may be formed of any one metal selected from Ru, Ir, Rh, Pt, W, Ta, Ti and Co.
  • a method of forming an ohmic electrode comprising: sequentially laminating a contact layer formed of an Al alloy, a reflective layer formed of Ag metal and a protective layer for restraining out-diffusion of the reflective layer on a predetermined semiconductor layer functioning as a light emitting layer; and performing a heat treatment process of the structure having the contact layer, the reflective layer and the protective layer so that an ohmic contact is formed on an interface between the ohmic electrode and the semiconductor layer due to some particles in-diffused from the reflective layer.
  • the heat treatment process may be performed at a temperature of 200 to 600 0 C, and the heat treatment process may be performed in an atmosphere containing oxygen. That is, the heat treatment process may be performed under any one of an oxygen atmosphere, an air atmosphere, an oxygen-nitrogen mixture atmosphere, and an oxygen-argon mixture atmosphere.
  • a semiconductor light emitting element comprising: a nitride-based semiconductor layer functioning as a light emitting layer; and an ohmic electrode formed on the semiconductor layer, wherein the ohmic electrode comprises a contact layer made of an Al alloy and formed on the nitride-based semiconductor layer functioning as the light emitting layer; a reflective layer made of Ag metal, formed on the contact layer and having some particles in-diffused to the semiconductor layer; and a protective layer formed on the reflective layer to restrain out-diffusion of the reflective layer.
  • an ohmic electrode according to the present invention includes a contact layer formed of an Al alloy, a reflective layer formed of Ag metal and a protective layer for restraining out-diffusion of the Ag reflective layer.
  • a metallization reaction is progressed in the entire interface between the contact layer and a light emitting layer due to Ag particles in-diffused from the reflective layer during heat treatment, and out-diffusion of the Ag particles are restrained by the contact layer and the protective layer. Therefore, advantageous effects can be expected as follows: [18] First, since the reflective layer and the light emitting layer directly form an ohmic contact due to the interface reaction during heat treatment, the present invention has strong adhesive strength and low contact resistance.
  • the present invention has high light reflectance and excellent thermal stability.
  • high-priced metal such as Au or Pt is not used in the present invention, manufacturing costs can be reduced.
  • the contact layer and the reflective layer are formed of Al and Ag having an excellent light reflectance characteristic, the present invention has high light reflectance.
  • FIG. 1 is a sectional view showing a semiconductor light emitting element according to a first embodiment of the present invention.
  • FIG. 2 to 5 are sectional views showing a process of manufacturing the semiconductor light emitting element according to the first embodiment of the present invention.
  • Fig. 6 is a graph showing current- voltage characteristics of an ohmic electrode according to an experimental example of the present invention and a comparative example.
  • Fig. 7 is a graph showing analysis results of depth profile by a secondary ion-mass spectroscopy (SIMS) before and after heat treatment of the ohmic electrode according to the experimental example of the present invention.
  • Fig. 8 is a graph showing light reflectance of the ohmic electrodes according to the experimental example of the present invention and the comparative example.
  • Fig. 1 is a graph showing current- voltage characteristics of an ohmic electrode according to an experimental example of the present invention and a comparative example.
  • SIMS secondary ion-mass spectroscopy
  • FIG. 9 is a graph showing the electrical light emitting spectrum of the semiconductor light emitting element according to the first embodiment of the present invention.
  • Fig. 10 is a sectional view showing a semiconductor light emitting element having a flip-chip structure according to a second embodiment of the present invention.
  • FIG. 1 is a sectional view showing a semiconductor light emitting element according to a first embodiment of the present invention.
  • the semiconductor light emitting element includes a light emitting layer 200, an n-type electrode 400 formed on one side of the light emitting layer 200, and a p-type electrode 300 formed on the other side of the light emitting layer 200.
  • the p-type electrode 300 is formed to have a multi-layered structure including a contact layer 310, a reflective layer 320 and a protective layer 330.
  • the light emitting layer 200 includes an n-type layer 210, an active layer 220 and a p-type layer 230, which are formed of one of a Si film, a GaN film, an AlN film, an InGaN film, an AlGaN film, an AlInGaN film, a semiconductor thin film including them and combinations thereof.
  • the n-type and p- type layers 210 and 230 are formed of a GaN film
  • the active layer 220 is formed of an InGaN film.
  • the n-type layer 210 which is a layer for providing electrons, may include an n- type semiconductor layer and an n-type clad layer.
  • the n-type semiconductor layer and n-type clad layer may be formed by implanting n-type impurites, e.g., Si, Ge, Se, Te, C or the like, into the aforementioned semiconductor thin film.
  • the p-type layer 230 which is a layer for providing holes, may include a p-type semiconductor layer and a p-type clad layer.
  • the p-type semiconductor layer and p- type clad layer may be formed by implanting p-type impurities, e.g., Mg, Zn, Be, Ca, Sr, Ba or the like, into the aforementioned semiconductor thin film.
  • the active layer 220 is a layer for emitting light having a predetermined wavelength through recombination of electrons provided from the n-type layer 210 and holes provided from the p-type layer 230.
  • the active layer 220 may be formed of multi- layered semiconductor thin films having a multiple quantum well structure, which is formed by alternately laminating well layers and barrier layers, or a bulk structure. Since the wavelength of the output light is changed depending on a semiconductor material of the active layer 220, a semiconductor material may be appropriately selected depending on a target wavelength.
  • the n-type layer 210 is formed by depositing a GaN thin film and thereafter implanting n-type impurities, the active layer 220 having a multiple quantum well structure is formed on the n-type layer 210 by alternately depositing GaN thin film which is a barrier layer and InGaN thin film which is a well layer, and then p-type layer 130 is formed by depositing a GaN thin film on the active layer 220 and then implanting p-type impurities to form the light emitting layer 200 described above.
  • the n-type electrode 400 may include one of Pb, Sn, Au, Ge, Cu, Bi, Cd, Zn, Ag,
  • Ni, Ti, an alloy of them and combinations thereof may be used as the n-type electrode 400.
  • An ohmic electrode of a multi-layered structure including the contact layer 310, the reflective layer 320 and the protective layer 330 may be used as the p-type electrode 300.
  • the contact layer 310 may be formed of an alloy layer including Al and any one selected from Mg, Cu, In and Sn.
  • the reflective layer 320 may be formed of a metal layer including Ag, and the protective layer 330 may be formed of a metal layer including any one selected from Ru, Ir, Rh, Pt, W, Ta, Ti and Co.
  • the contact layer 310 is formed of MgAl alloy
  • the reflective layer 320 is formed of Al metal
  • the protective layer 330 is formed of Ru metal.
  • FIGs. 2 to 5 are sectional views showing a process of manufacturing the semiconductor light emitting element according to the first embodiment of the present invention.
  • a light emitting layer 200 with a multi-layered structure is formed by sequentially laminating an n-type layer 210, an active layer 220 and a p- type layer 230 on a substrate 100, and individual cells are formed by performing a patterning process using a predetermined mask.
  • the substrate 100 may be a SiC, Si, ZnO, GaAs or GaP substrate. Particularly, the sapphire substrate is more preferable to be used.
  • the light emitting layer 200 may include one of a Si film, a GaN film, an AlN film, an InGaN film, an AlGaN film, an AlInGaN film and a film including them.
  • the n-type layer 210 is formed by depositing a GaN thin film and thereafter implanting n-type impurities
  • the active layer 220 with a multiple quantum well structure is formed on the n-type layer 210 by alternately depositing a GaN thin film which is barrier layer and an InGaN thin film which is a well layer
  • the p-type layer 230 is formed by depositing a GaN thin film on the active layer 220 and then implanting p-type impurities.
  • a buffer layer (not shown) may be additionally formed between the substrate 100 and the n-type layer 210.
  • the buffer layer reduces the stress caused by lattice mismatch between the substrate 100 and the n-type layer 210 and helps the n-type layer 210 grow smoothly.
  • the light emitting layer 200 may be surface treated in order to form a high-quality thin film thereon and to enhance adhesive strength of an interface.
  • a secondary surface treatment may be performed by dipping the light emitting layer 200 into a solution in which HCl and deionized water are mixed at a ratio of 1 to 1 for 1 minute and then drying, before depositing a subsequent layer, i.e., a p-type electrode.
  • a contact layer 310 a contact layer 310, a reflective layer 320 and a protective layer
  • the contact layer 310 may be formed to have a thickness of 2 to 5nm
  • the reflective layer 320 may be formed to have a thickness of 150 to 5000nm
  • the protective layer 330 may be formed to have a thickness of 40 to lOOnm.
  • the contact layer 310 is formed by depositing an MgAl film to have a thickness of 5nm
  • the reflective layer 320 is formed by depositing an Ag film to have a thickness of 300nm
  • the protective layer 330 is formed by depositing a Ru film to have a thickness of 50nm.
  • the p-type electrode 300 is an ohmic electrode formed by performing a rapid thermal annealing process of a multi-layered electrode having an MgAl/Ag/Ru structure in air.
  • Such a heat treatment process may be performed under an atmosphere containing oxygen. That is, the heat treatment process may be performed under any one of an oxygen atmosphere, an air atmosphere, an oxygen-nitrogen mixture atmosphere, and an oxygen-argon mixture atmosphere. At this time, the pressure of the atmosphere containing oxygen may be atmospheric pressure or less, and the heat treatment process is performed at a temperature of 200 to 600 0 C for about 1 minute.
  • the multi-layered electrode with an MgAl/Ag/Ru structure is heat treated in air, diffusion of Ag particles is generated in the Ag reflective layer 320.
  • the Ag particles which infiltrate into the MgAl contact layer 310 due to the in- diffusion of the Ag particles, are metallized on the entire interface between the MgAl contact layer 310 and the p-type layer 230, so that the ohmic electrode 300 has strong adhesive strength and low contact resistance.
  • the ohmic electrode has high light reflectance and excellent thermal stability.
  • a lift-off process for separating the substrate 100 adhering to the n-type layer 210 is performed by irradiating excimer laser onto a lower portion of the substrate 100, and an n-type electrode 400 is formed on the n-type layer 210 from which the substrate 100 is removed, and thereby a semiconductor light emitting element provided with the aforementioned structure is manufactured.
  • the ohmic electrode 300 with an MgAl/Ag/Ru structure formed by laminating MgAl, Ag and Ru thin films 310, 320 and 330 on a light emitting layer 200 and then performing a heat treatment process in air at a temperature of 45O 0 C for about 1 minute was used.
  • Fig. 6 is a graph showing current- voltage characteristics of the ohmic electrode according to the experimental example of the present invention and the comparative example.
  • Line A in the graph of Fig. 6 represents a current- voltage characteristic of the ohmic electrode with an MgAl/Ag/Ru structure according to the experimental example
  • line B represents a current- voltage characteristic of the ohmic electrode with a Ni/ Au structure according to the comparative example.
  • Fig. 7 is a graph showing analysis results of depth profile by a secondary ion-mass spectroscopy (SIMS) before and after heat treatment of the ohmic electrode according to the experimental example of the present invention.
  • SIMS secondary ion-mass spectroscopy
  • Fig. 8 is a graph showing light reflectance of the ohmic electrodes according to the experimental example of the present invention and the comparative example, wherein the light reflectance is measured at a wavelength band of 460nm.
  • Line A in the graph of Fig. 8 represents light reflectance of the ohmic electrode with an MgAl/Ag/Ru structure after the heat treatment according to the experimental example
  • line B represents light reflectance of the ohmic electrode with an Ag/Ru structure after the heat treatment according to the comparative example.
  • the ohmic electrode without Ru protective layer according to the comparative example shows a low light reflectance of 72%.
  • the ohmic electrode with the Ru protective layer according to the experimental example shows a high light reflectance of 85%. This is because in the ohmic electrode with an MgAl/ Ag/Ru structure according to the present invention, the MgAl contact layer and the Ru protective layer respectively prevent the agglomeration of the Ag reflective layer at the interface with the light emitting layer and a surface thereof, and thus a high light reflectance characteristic of Ag is maintained as it is.
  • Fig. 9 is a graph showing the electrical light emitting spectrum of the semiconductor light emitting element according to the first embodiment of the present invention.
  • Line A in the graph of Fig. 9 represents a case where the ohmic electrode with an MgAl/Ag/Ru structure according to the experimental example is used as a p- type electrode
  • line B represents a case where the ohmic electrode with a Ni/ Ag structure according to the comparative example is used as a p-type electrode.
  • the ohmic electrode 300 applied to the semiconductor light emitting element according to this embodiment has low contact resistance together with strong adhesive strength and excellent thermal stability together with high light reflectance. Accordingly, the omhic electrode can be appropriately used in a high power light emitting element through the application of large current, i.e., a semiconductor light emitting element with the aforementioned vertical structure or with a following flip- chip structure. In this case, an excellent light emitting characteristic can be expected.
  • Fig. 10 is a sectional view showing a semiconductor light emitting element with a flip-chip structure according to a second embodiment of the present invention.
  • the semiconductor light emitting element includes a light emitting layer 510 with a multi-layered structure having an n-type layer 210, an active layer 220 and a p-type layer 230, an n-type electrode 520 formed in a predetermined region of the n-type layer 210, a p-type electrode 530 formed on the p-type layer 130, and a submount substrate 540 connected to the two electrodes 520 and 530 using bumps 541 and 542.
  • the semiconductor light emitting element further includes a diffusion layer 550 formed under the n-type layer 210.
  • the p-type electrode 530 includes a contact layer 310, a reflective layer 320 and a protective layer 330. That is, the aforementioned ohmic electrode with an MgAl/Ag/Ru structure may be used. Accordingly, the adhesive strength between the p-type layer 130 and the contact layer 310 can be enhanced, and the interface therebetween is planarized, thereby the light reflection efficiency of the Ag reflective layer 320 can be maximized. In addition, the Ag reflective layer 320 is protected since it is covered with the protective layer 330, so that it is possible to prevent the deterioration and agglomeration of the Ag reflective layer 330 due to heat generated in a subsequent heat treatment process or operation process.
  • the diffusion layer 550 allows the current applied to the n-type electrode 520 to be uniformly diffused into the n-type layer 510 and allows the heat transferred through the n-type layer 510 to be effectively radiated, the high power and reliability of the semiconductor light emitting element are ensured.
  • n-type layer 210, an active layer 220 and a p-type layer 230 are sequentially laminated on a mother substrate (not shown), and a patterning process is then performed using a predetermined mask, to thereby form individual cells. Then, an MgAl contact layer 310, an Ag reflective layer 320 and a Ru protective layer 330 are additionally laminated on the p-type layer 230, and a heat treatment process is performed in air at a temperature of 45O 0 C for about 1 minute, to thereby form an ohmic electrode, i.e., a p-type electrode 530, with low contact resistance and excellent light reflectance.
  • the diffusion layer 550 may be formed of a material with excellent conductivity and transmissivity, e.g., ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

Abstract

La présente invention concerne une électrode ohmique, qui comprend : une couche de contact constituée d'un alliage d'Al et formée sur une couche semi-conductrice à base de nitrure servant de couche électroluminescente; une couche réfléchissante constituée d'un métal Ag, formée sur la couche de contact et contenant des particules diffusées vers l'intérieur vers la couche semi-conductrice; et une couche protectrice formée sur la couche réfléchissante et destinée à restreindre la diffusion vers l'extérieur de la couche réfléchissante. L'invention a également trait à un procédé de formation de ladite électrode ohmique, et à un élément électroluminescent semi-conducteur contenant ladite électrode ohmique. L'électrode ohmique selon l'invention est caractérisée en ce qu'elle présente une adhérence élevée et une faible résistance de contact, la couche réfléchissante et la couche électroluminescente formant directement un contact ohmique en raison de la réaction au niveau de l'interface lors d'un traitement thermique. L'électrode ohmique selon l'invention présente également un facteur de réflexion élevé et une excellente stabilité thermique, la couche de contact et la couche protectrice restreignant la diffusion vers l'extérieur de la couche réfléchissante pendant le traitement thermique.
PCT/KR2007/004980 2006-08-02 2007-10-11 Électrode ohmique, procédé associé et élément électroluminescent semi-conducteur contenant ladite électrode ohmique WO2008069429A1 (fr)

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Application Number Priority Date Filing Date Title
US12/517,321 US8093618B2 (en) 2006-08-02 2007-10-11 Multi-layer ohmic electrode, semiconductor light emitting element having multi-layer ohmic electrode, and method of forming same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060121597A KR100845037B1 (ko) 2006-08-02 2006-12-04 오믹 전극 및 그 형성 방법, 이를 구비하는 반도체 발광소자
KR10-2006-0121597 2006-12-04

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2352165A1 (fr) * 2009-04-03 2011-08-03 Panasonic Corporation Élément à semi-conducteurs de nitrure et son procédé de fabrication
EP2365548A1 (fr) * 2010-03-09 2011-09-14 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur et son procédé de fabrication
US8933543B2 (en) 2010-04-02 2015-01-13 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag

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JP2005268275A (ja) * 2004-03-16 2005-09-29 Sanyo Electric Co Ltd 窒化物系半導体発光ダイオード素子
JP2006059933A (ja) * 2004-08-18 2006-03-02 Mitsubishi Cable Ind Ltd ｎ型窒化物半導体用のオーミック電極およびその製造方法
KR20060080337A (ko) * 2005-01-05 2006-07-10 엘지이노텍 주식회사 반도체발광소자 및 이를 구비한 반도체패키지

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Publication number Priority date Publication date Assignee Title
JP2005268275A (ja) * 2004-03-16 2005-09-29 Sanyo Electric Co Ltd 窒化物系半導体発光ダイオード素子
JP2006059933A (ja) * 2004-08-18 2006-03-02 Mitsubishi Cable Ind Ltd ｎ型窒化物半導体用のオーミック電極およびその製造方法
KR20060080337A (ko) * 2005-01-05 2006-07-10 엘지이노텍 주식회사 반도체발광소자 및 이를 구비한 반도체패키지

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2352165A1 (fr) * 2009-04-03 2011-08-03 Panasonic Corporation Élément à semi-conducteurs de nitrure et son procédé de fabrication
EP2352165A4 (fr) * 2009-04-03 2012-11-14 Panasonic Corp Élément à semi-conducteurs de nitrure et son procédé de fabrication
EP2365548A1 (fr) * 2010-03-09 2011-09-14 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur et son procédé de fabrication
US8445916B2 (en) 2010-03-09 2013-05-21 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US8729564B2 (en) 2010-03-09 2014-05-20 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US8933543B2 (en) 2010-04-02 2015-01-13 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag

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