WO2008064176A3 - Procédé et système d'amélioration de la lithographie à faisceau de particules - Google Patents
Procédé et système d'amélioration de la lithographie à faisceau de particules Download PDFInfo
- Publication number
- WO2008064176A3 WO2008064176A3 PCT/US2007/085135 US2007085135W WO2008064176A3 WO 2008064176 A3 WO2008064176 A3 WO 2008064176A3 US 2007085135 W US2007085135 W US 2007085135W WO 2008064176 A3 WO2008064176 A3 WO 2008064176A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polygonal
- shaped
- contour
- cell pattern
- particle beam
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
L'invention concerne un procédé de lithographie à faisceau de particules telle que la lithographie à faisceau d'électrons (EB), comprenant la formation d'une pluralité de schémas cellulaires sur un masque de pochoir et la formation d'un ou de plusieurs schémas cellulaires avec un contour de forme polygonale. Un premier schéma cellulaire de forme polygonale est exposé à un faisceau de particules de façon à projeter le premier schéma cellulaire de forme polygonale sur un substrat. Un second schéma cellulaire de forme polygonale, ayant un contour qui correspond au contour du premier schéma cellulaire de forme polygonale est exposé au faisceau de particules tel qu'un faisceau d'électrons, de façon à projeter le second schéma cellulaire de forme polygonale sur le plan adjacent au premier schéma cellulaire de forme polygonale pour former ainsi une cellule combinée, le contour du premier schéma cellulaire de forme polygonale correspondant au contour du second schéma cellulaire de forme polygonale. Le contour de forme polygonale des premier et second schémas cellulaires peut comprendre un contour de forme rectiligne.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/603,603 US7897522B2 (en) | 2006-11-21 | 2006-11-21 | Method and system for improving particle beam lithography |
US11/603,603 | 2006-11-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008064176A2 WO2008064176A2 (fr) | 2008-05-29 |
WO2008064176A3 true WO2008064176A3 (fr) | 2008-07-31 |
Family
ID=39416005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/085135 WO2008064176A2 (fr) | 2006-11-21 | 2007-11-19 | Procédé et système d'amélioration de la lithographie à faisceau de particules |
Country Status (3)
Country | Link |
---|---|
US (1) | US7897522B2 (fr) |
TW (1) | TW200839459A (fr) |
WO (1) | WO2008064176A2 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5147711B2 (ja) * | 2005-12-01 | 2013-02-20 | ケイデンス デザイン システムズ インコーポレイテッド | 電子線描画のシステム及び方法 |
US7579606B2 (en) * | 2006-12-01 | 2009-08-25 | D2S, Inc. | Method and system for logic design for cell projection particle beam lithography |
US8017286B2 (en) * | 2008-09-01 | 2011-09-13 | D2S, Inc. | Method for design and manufacture of a reticle using a two-dimensional dosage map and charged particle beam lithography |
US7981575B2 (en) | 2008-09-01 | 2011-07-19 | DS2, Inc. | Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography |
US7759027B2 (en) * | 2008-09-01 | 2010-07-20 | D2S, Inc. | Method and system for design of a reticle to be manufactured using character projection lithography |
US7901845B2 (en) * | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method for optical proximity correction of a reticle to be manufactured using character projection lithography |
US9323140B2 (en) | 2008-09-01 | 2016-04-26 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US7799489B2 (en) * | 2008-09-01 | 2010-09-21 | D2S, Inc. | Method for design and manufacture of a reticle using variable shaped beam lithography |
US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
US8057970B2 (en) * | 2008-09-01 | 2011-11-15 | D2S, Inc. | Method and system for forming circular patterns on a surface |
US8017288B2 (en) * | 2008-09-01 | 2011-09-13 | D2S, Inc. | Method for fracturing circular patterns and for manufacturing a semiconductor device |
US7901850B2 (en) * | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
US7754401B2 (en) * | 2008-09-01 | 2010-07-13 | D2S, Inc. | Method for manufacturing a surface and integrated circuit using variable shaped beam lithography |
WO2010025031A2 (fr) * | 2008-09-01 | 2010-03-04 | D2S, Inc. | Procédé pour correction de proximité optique, concept et fabrication d’un réticule à l’aide de la lithographie par projection de caractères |
US8669023B2 (en) | 2008-09-01 | 2014-03-11 | D2S, Inc. | Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography |
US7759026B2 (en) * | 2008-09-01 | 2010-07-20 | D2S, Inc. | Method and system for manufacturing a reticle using character projection particle beam lithography |
US9164372B2 (en) | 2009-08-26 | 2015-10-20 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459771A (en) * | 1994-04-01 | 1995-10-17 | University Of Central Florida | Water laser plasma x-ray point source and apparatus |
US5986292A (en) * | 1996-12-27 | 1999-11-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated logic circuit device |
US6037820A (en) * | 1997-12-12 | 2000-03-14 | Fujitsu Limited | Clock distribution circuit in a semiconductor integrated circuit |
US20020175298A1 (en) * | 2001-05-23 | 2002-11-28 | Akemi Moniwa | Method of manufacturing semiconductor device |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0364929B1 (fr) | 1988-10-20 | 1995-09-06 | Fujitsu Limited | Méthode de fabrication de dispositifs semiconducteurs et masque transparent au faisceau de particules chargées |
JPH03174716A (ja) * | 1989-08-07 | 1991-07-29 | Hitachi Ltd | 電子ビーム描画装置および描画方式 |
JP2663063B2 (ja) | 1991-06-12 | 1997-10-15 | 富士通株式会社 | 荷電ビーム露光方法 |
JP3478058B2 (ja) * | 1997-05-30 | 2003-12-10 | 株式会社日立製作所 | 荷電粒子線描画装置 |
JP2000031885A (ja) * | 1998-07-16 | 2000-01-28 | Ntt Mobil Communication Network Inc | 移動局正常接続確認方法 |
JP2001274077A (ja) | 2000-03-28 | 2001-10-05 | Toshiba Corp | 荷電粒子ビーム描画装置 |
JP2001332468A (ja) * | 2000-05-19 | 2001-11-30 | Nikon Corp | マスク、荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法 |
JP3983990B2 (ja) * | 2000-06-13 | 2007-09-26 | 株式会社東芝 | 回路パターンの設計方法と荷電粒子ビーム露光方法及び記録媒体 |
US6718532B2 (en) * | 2001-02-23 | 2004-04-06 | Kabushiki Kaisha Toshiba | Charged particle beam exposure system using aperture mask in semiconductor manufacture |
JP2002289510A (ja) * | 2001-03-28 | 2002-10-04 | Toshiba Corp | 露光データ作成方法、アパーチャマスクデータの作成方法、荷電ビーム露光方法、及び荷電ビーム露光装置 |
GB2413694A (en) * | 2004-04-30 | 2005-11-02 | Ims Nanofabrication Gmbh | Particle-beam exposure apparatus |
JP4187703B2 (ja) * | 2004-08-10 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | ブロックマスクを利用した荷電粒子ビーム露光データの生成方法及び荷電粒子ビーム露光方法 |
GB0425324D0 (en) * | 2004-11-17 | 2004-12-22 | Univ Edinburgh | Assay method |
JP4867163B2 (ja) | 2004-12-06 | 2012-02-01 | 富士通セミコンダクター株式会社 | 荷電粒子ビーム露光方法及び装置、荷電粒子ビーム露光データ作成方法及びプログラム、並びに、ブロックマスク |
JP5147711B2 (ja) * | 2005-12-01 | 2013-02-20 | ケイデンス デザイン システムズ インコーポレイテッド | 電子線描画のシステム及び方法 |
US7772575B2 (en) * | 2006-11-21 | 2010-08-10 | D2S, Inc. | Stencil design and method for cell projection particle beam lithography |
US7902528B2 (en) * | 2006-11-21 | 2011-03-08 | Cadence Design Systems, Inc. | Method and system for proximity effect and dose correction for a particle beam writing device |
US7953582B2 (en) * | 2006-11-21 | 2011-05-31 | Cadence Design Systems, Inc. | Method and system for lithography simulation and measurement of critical dimensions |
US7579606B2 (en) * | 2006-12-01 | 2009-08-25 | D2S, Inc. | Method and system for logic design for cell projection particle beam lithography |
-
2006
- 2006-11-21 US US11/603,603 patent/US7897522B2/en not_active Expired - Fee Related
-
2007
- 2007-11-19 WO PCT/US2007/085135 patent/WO2008064176A2/fr active Application Filing
- 2007-11-20 TW TW096143894A patent/TW200839459A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459771A (en) * | 1994-04-01 | 1995-10-17 | University Of Central Florida | Water laser plasma x-ray point source and apparatus |
US5986292A (en) * | 1996-12-27 | 1999-11-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated logic circuit device |
US6037820A (en) * | 1997-12-12 | 2000-03-14 | Fujitsu Limited | Clock distribution circuit in a semiconductor integrated circuit |
US20020175298A1 (en) * | 2001-05-23 | 2002-11-28 | Akemi Moniwa | Method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TW200839459A (en) | 2008-10-01 |
US20080116399A1 (en) | 2008-05-22 |
WO2008064176A2 (fr) | 2008-05-29 |
US7897522B2 (en) | 2011-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008064176A3 (fr) | Procédé et système d'amélioration de la lithographie à faisceau de particules | |
WO2008064155A3 (fr) | Dessin stencil et procédé de lithographie par faisceau à particules à projection de cellules | |
WO2010065252A3 (fr) | Procédés de fabrication de substrats | |
WO2008033879A3 (fr) | Procédé pour obtenir des caractéristiques d'assistance de sous-résolution conformes | |
WO2010025032A3 (fr) | Procédé pour correction de proximité optique, concept et fabrication d’un réticule à l’aide d’une lithographie à faisceau de forme variable | |
WO2012129209A3 (fr) | Procédé de gravure permettant de commander la dimension critique et l'intégrité d'un motif dans des masques multicouches | |
EP2302659A3 (fr) | Procédé de fractionnement et de formation d'un motif utilisant des caractères curvilinéaires avec la lithographie par faisceau de particules chargées | |
WO2007030528A3 (fr) | Masque photographique et procede pour etablir une caracteristique non orthogonale sur celui-ci | |
TW200705097A (en) | Pattern coating material and pattern formation method | |
WO2007006455A3 (fr) | Image quadrillee et son procede de production | |
WO2010025031A3 (fr) | Procédé pour correction de proximité optique, concept et fabrication d’un réticule à l’aide de la lithographie par projection de caractères | |
TW200731026A (en) | A method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process | |
TW200745739A (en) | Method and apparatus for performing dark field double dipole lithography (DDL) | |
TWI268543B (en) | Composite optical lithography method for patterning lines of substantially equal width | |
SG158822A1 (en) | Full wafer width scanning using step and scan system | |
TW200639576A (en) | Method of manufacturing gray level mask, gray level mask, and gray level mask blank | |
TW200632540A (en) | Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device | |
WO2010110987A3 (fr) | Procédés pour former des motifs sur des substrats | |
WO2009082150A3 (fr) | Procédé de formation de motif magnétique et procédé de fabrication de support à motif faisant appel audit procédé | |
WO2007041530A3 (fr) | Inscription d'un motif de structure de circuit par flashes de faisceau de particules forme | |
SG128504A1 (en) | Dielectric substrate with holes and method of manufacture | |
TW200725200A (en) | Method and system of mask superposition for multiple exposures | |
TW200735179A (en) | Circuit pattern exposure method and mask | |
TW200612554A (en) | Method and system for etching a gate stack | |
TW200739249A (en) | Photomask, method for manufacturing such photomask and pattern forming method using such photomask |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07845118 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07845118 Country of ref document: EP Kind code of ref document: A2 |