WO2008055406A1 - Del de lumière blanche - Google Patents

Del de lumière blanche Download PDF

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Publication number
WO2008055406A1
WO2008055406A1 PCT/CN2007/003006 CN2007003006W WO2008055406A1 WO 2008055406 A1 WO2008055406 A1 WO 2008055406A1 CN 2007003006 W CN2007003006 W CN 2007003006W WO 2008055406 A1 WO2008055406 A1 WO 2008055406A1
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WIPO (PCT)
Prior art keywords
white light
light emitting
emitting diode
cup
diode according
Prior art date
Application number
PCT/CN2007/003006
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English (en)
French (fr)
Inventor
Pinya Lin
Original Assignee
Chang Hsin High Intensity Led (Dong Guan) Co., Ltd
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Filing date
Publication date
Application filed by Chang Hsin High Intensity Led (Dong Guan) Co., Ltd filed Critical Chang Hsin High Intensity Led (Dong Guan) Co., Ltd
Publication of WO2008055406A1 publication Critical patent/WO2008055406A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the present invention relates to light emitting diodes (LEDs), and more particularly to a functional illumination type light emitting diode that emits white light.
  • LEDs light emitting diodes
  • a white LED is a device that emits light in a forward direction to the junction of a semiconductor PN. It is today's hottest light source technology with many advantages over traditional light sources. The most significant advantage is energy saving, saving 80% energy compared to the eye light, and using low voltage power supply, which is safer and more reliable and has a long service life. Light-emitting diodes are not only less energy and materials required for production, they are also environmentally friendly because they do not contain mercury, a toxic substance commonly found in fluorescent lamps. High-power white light LED represents the development direction of today's LED point light source from decorative lighting to functional lighting, and the prospect is very broad.
  • the existing vertical bracket white light emitting diode is composed of a two-legged lead bracket ol, a chip 02 disposed in a bracket cup, a phosphor 03 covering the chip, and an epoxy lens 04 encapsulating the chip. .
  • This package structure has the following obvious disadvantages:
  • the invention aims to solve the problems of low luminous efficiency, serious light decay and short service life of the existing white LED, and provides a white LED with high luminous efficiency, very low light decay and long service life.
  • the technical solution of the present invention is to construct a white light emitting diode comprising a base having high thermal conductivity, at least one cup disposed on the base, and at least one chip disposed in the cup. a layer of phosphor covering the chip, a hollow lens cover for sealing the cup cup, and two high thermal conductivity guide legs respectively extending outwardly of the lens cover, the chip being positive
  • the negative electrodes are respectively connected to the lead pins through a lead.
  • the base is a cylinder having an upper end surface provided with a cup.
  • the base is a casing, and a plurality of bosses with the cups are disposed thereon, and the lens cover is a transparent member forming a hollow package with the casing. .
  • the hollow lens cover cavity may be filled with an inert gas.
  • the inert gas may be one of nitrogen, ammonia, helium, argon, and helium.
  • the angle between the diagonal lines on the inner circumferential surface of the cup is 80 to 120 degrees, and the preferred angle is 90 degrees.
  • the material of the base may be one of copper, aluminum, and iron.
  • the material of the lens cover is K7 anti-ultraviolet optical glass, anti-UV resin, and ceramic.
  • the present invention has the following three improvements:
  • a hollow, UV-resistant optical lens cover is used, in which an inert gas is filled. Thereby enhancing the light transmittance and thermal conductivity, while maintaining the heart. -14-chip working state stability, more Fully stimulate the light efficiency of white LEDs;
  • the large-sized chip base replaces the traditional vertical bracket. Through the high thermal conductivity of the material, the heat dissipation can be greatly accelerated, thereby reducing the thermal resistance of the white LED chip package and obtaining a good heat dissipation effect.
  • the invention has been tested in batches for a long time.
  • the following is a comparison table of the main parameters of the new white LED and the existing vertical bracket white LED.
  • the white light LED of the present invention has a luminous flux increase of 20% and a luminous efficiency of 20% as compared with the existing vertical bracket white light LED.
  • the abscissa indicates the aging test time of the LED, and the unit is hour.
  • the ordinate indicates the percentage of the luminous flux corresponding to the aging test time and the initial luminous flux.
  • the left vertical indicates the percentage of existing vertical white LEDs.
  • Right vertical is the percentage of white LEDs of the present invention.
  • the existing vertical white LED has only 10% of the initial luminous flux after 5000H aging; the white LED of the present invention only attenuates to 85% of the initial luminous flux after 5000H aging. It can be seen that the life of the white LED of the present invention is greatly increased, and a reliable basic product is provided for realizing the functional illumination of the white LED.
  • FIG. 1 is a schematic structural view of a conventional white light emitting diode:
  • FIG. 2 is a schematic structural view of a first embodiment of the present invention
  • Figure 3 is a schematic structural view of the hollow lens cover of FIG. 2:
  • Figure 4 is a schematic structural view of the base of Figure 2;
  • Figure 5 is a top plan view of a second embodiment of the present invention:
  • Figure 6 is a schematic view showing the structure of the cross section of A. A in Figure 5.
  • the white light emitting diode comprising a high thermal conductivity pedestal 1, a cup 2 disposed on the upper surface of the pedestal, and a cup A chip 3 in the middle, covering a layer of phosphor 4 on the chip.
  • An ultraviolet-resistant hollow lens cover 5 encloses the cup 2, and two high thermal conductivity guide pins 7 are respectively extended outwardly from the bottom of the lens cover 5, and the positive and negative electrodes of the chip 3 respectively pass through a 5 1 line 6 Connected to the lead 7 respectively.
  • the base 1 is a cylindrical body (see Fig. 4), and may also be a cylinder of other shapes, and only the shape of the lens cover is adapted thereto.
  • the susceptor 1 can be made of a material of copper, aluminum or iron.
  • the angle between the diagonal lines on the inner circumference of the bowl 2 is 80 to 120 degrees, and the optimum angle is 90 degrees (see Figure 4), and the optical reflection coefficient of the cup is improved by the matt treatment technique.
  • the number of chips in the cup 2 can be set as needed, for example, three chips of different colors are set.
  • the cavity of the lens cover 5 is filled with an inert gas 8, such as nitrogen, helium, neon, argon, helium or the like. As shown in Figure 3, the lens
  • the cover 5 can be made of K7 anti-ultraviolet optical glass material, or a]-j, y. It is made of other materials that are resistant to ultraviolet rays, such as UV-resistant resins and ceramics.
  • FIG. 5 and FIG. 6 show the basic structure of the second embodiment of the present invention
  • the chip mounting and the number, the materials used, and the shape of the cup are the same as those of the first embodiment, except that the base is a concave high-heat-conducting casing 10 having a plurality of bosses 1 1 having the cups 2 on the inner surface thereof, and the number of bosses can be selected according to requirements, for example, nine bosses, etc.
  • the cup 3 is provided with a chip 3, a layer of phosphor is covered on the chip (not shown), and the chip is positive.
  • the poles are respectively connected to the circuit provided on the inner surface of the casing through a lead wire 6, and the lens cover is a transparent plate 9 which forms a hollow package with the casing 10, that is, the lens cover has a plurality of convex portions with the cup 2
  • the table 11 is integrally hollowed out.
  • the cavity of the housing 10 is filled with an inert gas 8. It is also possible to form the highly thermally conductive casing as a flat plate, and the lens cover of the package is formed into a corresponding concave body so as to form a hollow structure.
  • the invention improves the life of the white LED by the structural improvement, and provides a reliable basic product for realizing the functional illumination of the white LED.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

白光发光二极管
技术领域
本发明涉及发光二极管 (LED)， 尤其涉及一种发出白光的功能照明 型发光二极管。
背景技术
白光 LED是一种将电流顺向通到半导体 PN结处而发光的器件。 它 是当今最炙手可热的光源技术， 具有很多相对于传统光源的优点。最显 著的优点是节能， 比目光灯节约 80 %电能，而且采用低压供电方式， 更 安全可靠， 使用寿命长。发光二极管不仅仅在生产上所需的能源和材料 少， 它还不舍有在荧光灯里常见的有毒物质水银， 对环境友好。大功率 白光 LED代表当今 LED点光源从装饰照明向功能照明转型的发展方向， 前景无比广阔。
如图 1 所示， 现有竖式支架白光发光二极管由两腿式的引线支架 ol、 设于一支架碗杯中的芯片 02、 覆盖芯片的荧光粉 03和封装芯片的 环氧树脂透镜 04组成。 这种封装结构存在如下明显缺点：
1、 环氧树脂封装时将芯片包裹并完全接触， 芯片发出的光和热使 得环氧树脂加速老化， 环氧树脂的厚实封装使得 LED的散热效果较差， 因而严重影口向白光 LED的光效和寿命；
2、 两腿式的碗杯结构不合理及引线支架导致散热能力不足， 大大 降低了白光 LED的光效和寿命。
由于现有白光 LED光效差、 光衰严重而导致器件的使用寿命较低， 从而困扰白光 LED向功能照明的快速发展。业界一直在不断的探求一种
1
确认本 光效高、 寿命长的白光 LED, 期望产生一次照明业界的大变革。
发明内容
本发明是为了解决现有白光 LED光效低、光衰严重和使用寿命短的 问题， 提供一种光效高、 光衰非常小和使用寿命长的白光 LED。
为解决上述问题， 本发明技术方案是构造一种白光发光二极管， 其包 括一高导热性的基座、 设于该基座上的至少一碗杯、 设于所述碗杯中的至 少一块芯片、 覆盖于该芯片上的一层荧光粉、 一将所述碗杯封罩的抗紫外 线的中空的透镜罩， 两只高导热性的导脚分别向该透镜罩外伸展， 所述芯 片的正、 负电极各自通过一引线与所述的导脚分别连接。
本发明的第一实施例， 所述的基座为一圆柱体， 其上端面设有一个所 述的碗杯。
本发明的第二实施例， 所述的基座为一壳体， 其上设有多个带有所述 碗杯的凸台， 而透镜罩为一与所述壳体形成中空封装的透明构件。
所述中空的透镜罩空腔内可以填充有惰性气体。
所述的惰性气体可以为氮气、 氨气、 氖气、 氩气、 氙气的一种。
所述碗杯内圆周面两侧斜线的夹角为 80至 120度， 而较佳夹角为 90 度。
所述基座的材料可以为铜材、 铝材、 铁材的一种。
所述透镜罩的材料为 K7抗紫外线光学玻璃、 抗紫外线树脂、 陶瓷的 一种。
本发明与现有技术相比， 作了以下三点改善：
1、 采用中空抗紫外线 (UV)的光学透镜罩， 其中填充惰性气体。 从而 增强了透光率和导热性， 同时可保持心. -14-片工作状态的稳定性， 更加 充分地激发白光 LED的光效； ·
2、 采用大体积的芯片基座替代传统的竖式支架， 通过材料的高热传 导性能， 可以大大加快散热， 从而降低白光 LED芯片封装后的热阻， 获得 良好的散热效果-
3、 选取碗杯反射面的最佳角度， 并并"用亚光处理技术改良碗杯光 学反射系数， 提高了白光 LED管芯片封装后的有效光效。
本发明经过批量长时间测试， 下面是新型白光 LED和现有竖式支架白 光 LED主要参数的对比表。
所用晶片、荧光粉、荧光胶和晶片粘合剂均相同。在正向电流 IF=20MA、 环境温度 Ta=22. 3。 c、 相对湿度 PH=57%的条件下测试， 对比结果如下：
、 光参数 (光通量、 光效)
通用方法 新型方法
良专 光通量 光效 再专 光通量 光效（Lm / W)
(Lm) (L州 W) (Lm)
1 4. 21 70. 17 1 5. 051 84. 18
2 3. 96 66 2 . 4. 864 81. 06
3 4. 151 69. 18 3 5. 023 83. 71
4 3. 971 66. 18 4 4. 941 82. 35
5 4. 321 72. 01 5 5. 316 88. 6
6 3. 861 64. 35 6 4. 944 82. 4
7 4. 010 66. 83 7 4. 847 80. 78
8 4. 3 1 71. 83 8 5. 376 89. 6
9 4. 358 72. 63 9 5. 54 92. 33
10 4. 03 67. 16 10 5. 23 87. 16
AUG 4. 118 68. 63 AUG 5. 133 85. 22 从上面图表可以看出本发明白光 LED与现有竖式支架白光 LED相比， 光通量增加了 20%、 光效提高了 20%。
二、 寿命对比表
Figure imgf000006_0001
表中： 横坐标表示 LED的老化测试时间， 单位为小时。 纵坐标表示对应老化 测试时间光通量与初始光通量的百分比。左纵表示现有竖型白光 LED百分比。 右纵是表示本发明白光 LED百分比。
"—— " 现有竖型白光 LED为的测试曲线；
"一口一"为本发明白光 LED的测试曲线。 ，
通过以上对比， 可以看出现有竖型白光 LED在 5000H老化后光通量仅有 初始光通量的 10% ; 本发明的白光 LED在 5000H老化后只衰减到初始光 通量的 85%。 从而可以看出本发明白光 LED的寿命大大增加， 为真正实 现白光 LED的功能照明提供了可靠的基本产品。
附图说明
下面结合附图和实施例对本发明做进一步的说明， 其中： 图 1为现有白光发光二极管的结构示意图：
图 2为本发明第一实施例的结构示意图；
图 3为图 2中的中空透镜罩的结构示意图： 图 4为图 2中基座的结构示意图；
图 5为本发明第二实施例的俯视示意图：
图 6为图 5中 A. A向横截面的结构示意图。
具体实施方式
图 2示出了本发明第一实施例的基本结构，所述的白光发光二极管， 其包括一高导热性的基座 1、 设于该基座上表面的一个碗杯 2、 设于碗 杯中的一块芯片 3、 覆盖于该芯片上的一层荧光粉 4。 一抗紫外线的中 空的透镜罩 5将碗杯 2封罩，两只高导热性的导脚 7分别由透镜罩 5底 部内向外伸展， 而芯片 3的正、 负电极各自通过一 5 1线 6分别与导脚 7连接。 本实施例中， 所述的基座 1为一圆柱状体 (请阅图 4)， 也可以 是其他形状的柱体，只需透镜罩的形状与其适配。基座 1可以采用铜材、 铝材、 铁材的一种材料来制作。碗杯 2内圆周面两侧斜线的夹角为 80 至 120度，夹角的最佳值为 90度 (请阅图 4)，并利用亚光处理技术改良 碗杯的光学反射系数。碗杯 2中芯片的块数可以根据需要设置， 如、 设 置三块不同颜色的芯片等等。 透镜罩 5的空腔内填充惰性气体 8， 如、 氮气、 氦气、 氖气、 氩气、 氙气等。 如图 3所示， 透镜
罩 5可以采用 K7抗紫外线光学玻璃材料来制作， 也. 一]- j, y. 采用其 他抗紫外线的材料来制作， 如， 抗紫外线树脂、 陶瓷等。
图 5、图 6示出了本发明第二实施例的基本结构，芯片安装和数量、 采用的材料和碗杯的形状与第一实施例的相同， 所不同的是， 所述的基 座为一凹形的高导热的壳体 10，其内表面上均布有多个带有所述碗杯 2 的凸台 1 1， 凸台的数量可以根据需要选择， 如、 九个凸台等， 碗杯中 设有芯片 3， 一层荧光粉覆盖于芯片上（图中未示出）， 芯片的正. . 负电 极各自通过一引线 6分别与设于壳体内表面上的电路对应连接，而透镜 罩为一与该壳体 10形成中空封装的透明平板 9，即透镜罩将多个带有碗 杯 2的凸台 11整体中空封装。 壳体 10的空腔内填充有惰性气体 8。 也 可以将高导热的壳体作成平板， 而配套封装的透镜罩作成相应的凹状 体， 以致形成中空结构。
本发明通过结构上的改进， 使得白光 LED的寿命大大增加， 为真正 实现白光 LED的功能照明提供了可靠的基本产品。

Claims

权 利 要 求 书
1、 一种白光发光二极管， 其特征在于： 包括一高导热性的基座、 设于该基座上的至少一碗杯 (2)、 设于所述碗杯中的至少一块芯片（3)、 覆盖于该芯片上的一层荧光粉 (4)、一将所述碗杯 (2)中空封罩的抗紫外 线的透镜罩， 高导热性的两只导脚 (7)分别向该透镜罩外伸展， 所述芯 片 (3)的正、 负电极各自通过一引线 (6)与所述的导脚 (7)分别连接。
2、 如权利要求 1所述的白光发光二极管， 其特征在于： 所述的基 座为一柱状体 (1)， 其上端面设有一个所述的碗杯 (2)。
3、 如权利要求 1所述的白光发光二极管， 其特征在于： 所述的基 座为一壳体（10)， 其上设有多个带有所述碗杯 (2)的凸台， 而透镜罩为 一与所述壳体 (10)形成中空封装的透明构件 (9)。
4、 如权利要求 1所述的白光发光二极管， 其特征在于： 所述透镜 罩的空腔内填充有惰性气体 (8)。
5、 如权利要求 4所述的白光发光二极管， 其特征在于： 所述的惰 性气体 (8)为氮气、 氦、 氖、 氩、 氙的一种。
6、 如权利要求 1所述的白光发光二极管， 其特征在于： 所述碗杯 (2)内圆周面两侧斜线的夹角为 80至 120度三一。
7、 如权利要求 6所述的白光发光二极管， 其特征在于： 所述碗杯 (2)内圆周面两侧斜线的夹角为 90度。
8、 如权利要求 1所述的白光发光二极管， 其特征在于： 所述基座 的材料为铜材、 铝材、 铁材的一种。
9、 如权利要求 1所述的白光发光二极管， 其特征在于： 所述透镜 罩的材料为抗紫外线光学玻璃、 抗紫外线树脂、 陶瓷。
PCT/CN2007/003006 2006-11-08 2007-10-22 Del de lumière blanche WO2008055406A1 (fr)

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