WO2008050579A1 - Matériau de semi-conducteur de type p, dispositif à semi-conducteur, dispositif électroluminescent organique et procédé de production d'un matériau de semi-conducteur de type p - Google Patents
Matériau de semi-conducteur de type p, dispositif à semi-conducteur, dispositif électroluminescent organique et procédé de production d'un matériau de semi-conducteur de type p Download PDFInfo
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- WO2008050579A1 WO2008050579A1 PCT/JP2007/068971 JP2007068971W WO2008050579A1 WO 2008050579 A1 WO2008050579 A1 WO 2008050579A1 JP 2007068971 W JP2007068971 W JP 2007068971W WO 2008050579 A1 WO2008050579 A1 WO 2008050579A1
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- Prior art keywords
- semiconductor material
- type semiconductor
- substrate
- znse
- type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 239000000463 material Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 16
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 10
- 229910009369 Zn Mg Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 59
- 239000011521 glass Substances 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 229920000307 polymer substrate Polymers 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 49
- 239000002994 raw material Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 16
- 229910052582 BN Inorganic materials 0.000 description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 14
- 238000007740 vapor deposition Methods 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000005525 hole transport Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241001422033 Thestylus Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
Definitions
- p-type semiconductor material semiconductor element, organic electret luminescence element, and method of manufacturing p-type semiconductor material
- the present invention relates to a p-type semiconductor material having a compound containing Zn and Se, a semiconductor element and an organic electroluminescence device comprising the p-type semiconductor material, and a method for producing the p-type semiconductor material.
- a hole injection electrode (hereinafter referred to as a p-type electrode) of a conventional organic electroluminescent device (hereinafter referred to as an organic EL element and an organic EL element) has transparency, easiness of availability, etc.
- ITO indium tin oxide
- ITO is formed on a glass substrate or a polymer substrate by a sputtering method, a vapor deposition method, or the like.
- ITO / NPB / Alq3 / Mg / Ag can be mentioned.
- NPB is N, N, -bis (l-naphyl)-N, N, one dipheny
- Alq3 is 8-hydroxyquinoline aluminum and functions as an electron transport layer.
- light is emitted by combining electrons and holes injected from the respective electrodes in the vicinity of the junction interface between the NPB layer which is a hole transport layer and the Alq layer which is an electron transport layer. Therefore, the light emission luminance of the organic EL element is proportional to the number of holes or holes or electrons injected into the electron transport layer.
- Patent Document 1 International Publication No. 2005/076373
- Non-Patent Document 1 S. ⁇ ⁇ Lee et al., Appl. Phys. Lett. 74 (1999) P. 67 0
- ZnSe or GaN whose polarity is controlled to p-type, has been proposed as a transparent p-type electrode material capable of achieving band matching with the hole transport layer having a large work function (patented)
- these materials are used only as a single crystal thin film, and the polycrystalline film loses the conductivity significantly, it can not be used on a glass substrate or a polymer substrate.
- the present invention is a p-type semiconductor material suitable for a p-type electrode which can be formed on a glass substrate or a polymer substrate which has band matching with the hole transport layer in an organic EL device.
- An object of the present invention is to provide a semiconductor element and an organic EL element provided with a p-type semiconductor material, and a method of manufacturing the p-type semiconductor material.
- Ag is contained in a compound containing Zn and Se at 1 ⁇ 10 18 to 5 ⁇ 10 2 ° cm ⁇ 3. It is characterized by
- the compound containing Zn and Se has a composition formula Zn
- Mg Se S (0 ⁇ ⁇ 0. 5, 0 ⁇ 0. 5) is indicated and eight 1 10 18 to 5 10 2 . It is characterized by containing cm ⁇ 3 .
- the content of Ag is 3 ⁇ 10 19 to 3 ⁇ 10 20 cm ⁇ 3 .
- a semiconductor device is characterized by including a p-type electrode including the above-mentioned p-type semiconductor material.
- the structure of the p-type semiconductor material contained in the p-type electrode of the semiconductor device according to the present invention is characterized in that it has a columnar structure extending in the average movement direction of holes.
- An organic EL device is characterized by comprising a p-type electrode including any one of the p-type semiconductor materials.
- p-type consisting of ZnSe containing l ⁇ 10 18 to 5 ⁇ 10 2 ° cm ⁇ 3 of Ag
- the manufacturing method of the semiconductor material is a vacuum evaporation method, and ZnSe and Ag S are used as a force evaporation source.
- a p-type semiconductor material suitable for a p-type electrode which has a large work function and can be formed on a glass substrate or a polymer substrate, and a semiconductor element using the same.
- the force S can be matched with the hole transport layer, and the emission luminance can be improved.
- the present invention can be applied not only to organic EL elements but also to other types of elements that perform hole injection, such as p-type electrodes of LEDs using inorganic materials.
- the P-type semiconductor material according to the present embodiment contains Ag as a dopant at 1 ⁇ 10 18 to 5 ⁇ 10 2 ° cm — 3 in a compound containing Zn and Se, and this p-type semiconductor material is used.
- the semiconductor element according to the present embodiment is formed on the substrate as the p-type electrode.
- This p-type semiconductor material can be used, for example, as a p-type electrode material of an organic EL element, and holes can be injected into a hole transport layer formed to be adjacent.
- the content of Ag is more than 5 ⁇ 10 2 ° cm — 3 , Ag segregates at grain boundaries of ZnSe, resulting in a decrease in work function. Therefore, for example, when the p-type semiconductor material according to the present embodiment is used as the anode of the organic EL element, the efficiency of hole injection to the adjacent hole transport layer is low. On the other hand, when the content of Ag is less than 1 ⁇ 10 18 cm- 3 , carriers are scattered at grain boundaries of ZnSe, and the conductivity almost disappears.
- the content of Ag is that when is 1 X 10 19 ⁇ 4 X 10 2 ° cm_ 3 Note Yogu further 3 10 19-3 10 2 111_ 3 Dearu I like it.
- Ag can act as an acceptor in the ZnSe lattice to generate holes.
- the p-type semiconductor material is represented by a composition formula Zn Mg Se S (0 ⁇ x, y ⁇ 0.5) that preferably contains Mg and S in Zn, Se and Ag. It is preferable to use a ZnSe-based compound.
- the p-type semiconductor material has a columnar structure extending in the thickness direction of the substrate (which is the average moving direction of holes in the thickness direction of the p-type electrode). It is preferable to An example of the columnar structure is shown in Fig.1.
- FIG. 1 is an electron micrograph showing the cross-sectional structure of the semiconductor device according to the present embodiment.
- a p-type electrode 2 in which a ZnSe-based compound is doped with Ag is formed on a quartz substrate 1, and ZnSe extends in a columnar shape in the thickness direction of the quartz substrate 1 (vertical direction in FIG. 1). .
- a substrate for forming a p-type electrode in a semiconductor device a single crystal of a compound semiconductor (for example, GaAs, GaP, InP) and a glass substrate coated with a conductive oxide (for example, ITO, ⁇ ) Can be used.
- a device such as a GaAs substrate ⁇ n- ZnSe: Cl ⁇ i- ZnSe ⁇ ZnSe: Ag as a substrate and form it on the top
- FIG. 2 is a conceptual view of the schematic internal configuration of the vapor deposition apparatus according to the present embodiment as viewed from the side, in which (a) shows the state before the start of vapor deposition and FIG. FIG. 3 is a schematic view showing the arrangement of the crucible of the vapor deposition apparatus according to one embodiment of the present invention, and FIG. 3 (a) is a plan view showing the position of the crucible relative to the rotational orbit of the substrate holder in this embodiment. (B) is a plan view showing the arrangement in the case where there are four crucibles.
- the substrate 20 is housed inside the vapor deposition device 10 configured as a closed container, and Zn, Se, and This is done by supplying a raw material gas stream formed by evaporating the raw material such as Ag.
- the upper portion in the vapor deposition chamber 10 is rotated in the vapor deposition chamber 10 by the rotation shaft 12.
- a substrate holder 13 is provided which is rotated (rotated in the direction of the arrow in FIG. 2).
- the substrate 20 is attached to the lower surface side of the substrate holder 13.
- an exhaust part 11 for adjusting the pressure in the vapor deposition device 10 is provided.
- the pressure in the vaporizer 10 is preferably set to 1 ⁇ 10 — 7 T OT r or less.
- the pressure in the evaporator 1 in the 0 is higher than 1 X 10- 7 Torr, will be written Ri taken in the thin film to be formed by residual water is too large, impair the crystallinity, desired electrical characteristics can not express It is because there is a thing.
- the pressure in the evaporator 10 is set to lower than or equal to 1 X 10_ 7 T OT r, the mean free path of atoms in the evaporator becomes about LOOOKm, material generated in the crucible 25, 26, 27, 28 The gas molecules contained in the air flow reach the surface of the substrate 20 directly without colliding with anything.
- Crucibles 25, 26, 27 containing Zn, Se, and Ag as raw materials are disposed on the lower surface side of the substrate 20.
- the crucibles 25, 26, 27 are placed vertically below the substrate 20.
- the flow of the raw material gas flow generated in each of the temples can be made substantially perpendicular to the substrate 20.
- the crucibles 25, 26, 27 may be arranged with an angle so that each raw material gas flow is concentrated in the vicinity of the substrate 20.
- Crucibles 25, 26, 27 are arranged at equal angular intervals on rotational orbit 13a of substrate holder 13 and with extension line 12a of rotational axis 12 (ie, the center of rotational orbit 13a). Force S preferred. By arranging at equal angular intervals, it is possible to equalize the supply time of the raw material air flow from each crucible to the substrate 20.
- S or Mg is deposited in addition to Zn, Se, and Ag, as shown in FIG. 3 (b), Zn, Se, etc. are equiangularly spaced from the extension line 12a of the rotary shaft 12.
- the crucibles 25, 26, 27, 28 containing Ag, Ag and S or Mg, respectively, are placed.
- BN boron nitride
- BN is , ZnSe, Zn, Se, Ag, a force that is difficult to react with.
- a shutter 14 is provided between the substrate 20 and the crucibles 25, 26, 27 for blocking supply of the raw material gas flow generated in each of the crucibles to the substrate 20.
- the shirter 14 may be provided with one common to all the crucibles rather than each crucible.
- the crucibles 25, 26, 27 and the substrate 20 are heated to a predetermined temperature by a heating means (not shown) (for example, an infrared lamp, a platinum wire electric current heater, a BN heater, a SiC heater).
- a heating means for example, an infrared lamp, a platinum wire electric current heater, a BN heater, a SiC heater.
- the heating temperature is set in accordance with the film forming conditions.
- the temperature of the substrate 20 during film formation is preferably 200 ° C. or more and 400 ° C. or less.
- the raw material gas flow reaching the substrate 20 is not crystallized, and desired electrical characteristics do not appear. Also, if the temperature is 400 ° C. or higher, the ZnSe vapor pressure is too high and the film does not adhere to the substrate 20.
- each raw material gas flow is supplied substantially perpendicularly to the substrate 20, and is adsorbed onto the substrate 20 to form the p-type electrode 2.
- the shutter 14 is simultaneously closed to complete the film forming process.
- the deposition rate is preferably 5 nm / min to 30 nm / min.
- the p-type semiconductor material and the semiconductor element of the present embodiment use Zn, Se, Ag or the like as a raw material, they can be easily manufactured by a vapor deposition method or a sputtering method.
- Ag is substitutionally dissolved in the ZnSe lattice to act as an acceptor and generate holes.
- It has a large work function (6.3 eV) compared to the work function of ITO used conventionally. Therefore, when applied to the p-type electrode of an organic EL device, band matching with the hole transport layer is taken away to create an energy barrier.
- the p-type semiconductor of the present embodiment is used.
- Ag is used as a dopant as in materials and semiconductor devices, valence control is unnecessary because only Ag + is present.
- the ion radius (100 pm) of Ag + is much larger than the ion radius (60 pm) of CtT, so it is difficult to cause diffusion due to heat or electric field in the ZnSe lattice.
- the content of Ag is set in a predetermined range, segregation at the grain boundaries and a decrease in work function due to the high content of Ag can be prevented, and It is possible to prevent the carrier scattering at the grain boundaries and the remarkable reduction of the conductivity due to the low content of.
- Example 1 an Ag-doped ZnSe epitaxial film was formed on a p-GaAs substrate to form a semiconductor device.
- the vapor deposition apparatus used was an ultimate vacuum of 1 x 10 8 T OT r. While heating the BN crucible containing lg of ZnSe raw material to 830 ° C and the BN crucible containing Ag SeO.lg to 775 ° C,
- the temperature of the GaAs substrate was raised to 250 ° C. by an IR lamp (infrared lamp), and the shutter below the substrate was opened for film formation.
- IR lamp infrared lamp
- the Ag concentration analyzed by the SI MS method was 1 ⁇ 10 2 ° cm ⁇ 3 and was uniform in the film thickness direction.
- the specific resistivity was 6. 8 ⁇ 10 4 Q cm.
- the current-voltage characteristics in the film thickness direction were good as shown in FIG.
- FIG. 4 shows 21 ⁇ 6: 8 ⁇ / ⁇ 0 & 8 3 (21 3 doped with 8 ⁇
- FIG. 2 is a diagram showing the current-voltage characteristic of the semiconductor device according to Example 1 in which e is deposited on p GaAs.
- Example 2 a Ag-doped ZnSe film was formed on a glass substrate with ITO to form a semiconductor device.
- the film formation conditions are the same as in Example 1.
- the work function measured by ultraviolet photoelectron spectroscopy was 6.3 eV, and the specific resistivity was 6.8 ⁇ 10 4 Q cm
- the current-voltage characteristic in the film thickness direction was good as in Example 1 .
- Example 3 an Ag-doped ZnSe epitaxial film was formed on a p-GaAs substrate to form a semiconductor element.
- evaporator used was of ultimate vacuum 1 X 10- 8 Torr. While heating the BN crucible containing lg of ZnSe raw material to 830 ° C and the BN crucible containing Ag SeO. Lg to 750 ° C,
- the temperature of the GaAs substrate was raised to 250 ° C. by an IR lamp (infrared lamp), and the shutter below the substrate was opened for film formation.
- IR lamp infrared lamp
- Example 4 an Ag-doped ZnSe epitaxial film was formed on a p-GaAs substrate to form a semiconductor element.
- evaporator used was of ultimate vacuum 1 X 10- 8 Torr. While heating the BN crucible containing lg of ZnSe raw material to 830 ° C and the BN crucible containing Ag SeO. Lg to 730 ° C,
- the temperature of the GaAs substrate was raised to 250 ° C. by an IR lamp (infrared lamp), and the shutter below the substrate was opened for film formation.
- IR lamp infrared lamp
- the epitaxial growth was performed by the In-plane X-ray diffraction method and the transmission electron microscope.
- the Ag concentration analyzed by the SIMS method was 3 ⁇ 10 18 cm ⁇ 3 and was uniform in the film thickness direction.
- the work function measured by ultraviolet photoelectron spectroscopy was 6. leV.
- the resistivity ratio was 7.5 ⁇ 10 6 Qcm.
- the current-voltage characteristics in the film thickness direction were as good as in Example 1.
- Comparative Example 1 an Ag-doped ZnSe epitaxial film was formed on a p-GaAs substrate to form a semiconductor element.
- evaporator used was of ultimate vacuum 1 X 10- 8 Torr. While heating the BN crucible containing lg of ZnSe raw material to 830 ° C and the BN crucible containing Ag SeO.lg to 830 ° C,
- the temperature of the GaAs substrate was raised to 250 ° C. by an IR lamp (infrared lamp), and the shutter below the substrate was opened for film formation.
- IR lamp infrared lamp
- the Ag concentration analyzed by the SIM S method is 1 ⁇ 10 21 cm ⁇ 3 , and the force is uniform in the film thickness direction. Ag is segregated at the grain boundaries by the in-plane X-ray diffraction method and the transmission electron microscope It was confirmed.
- the work function measured by ultraviolet photoelectron spectroscopy was 5. leV.
- the resistivity was 3 ⁇ 3 ⁇ 10 2 ⁇ «.
- evaporator used was of ultimate vacuum 1 X 10- 8 Torr.
- BN containing ZnSe raw material lg While heating the crucible to 830 ° C and the BN crucible containing Ag SeO.lg to 700 ° C, p-
- the temperature of the GaAs substrate was raised to 250 ° C. by an IR lamp (infrared lamp), and the shutter below the substrate was opened for film formation.
- IR lamp infrared lamp
- the Ag concentration analyzed by the SIMS method was 510 17 cm ⁇ 3 and was uniform in the film thickness direction. The measurement of the work function by ultraviolet photoelectron spectroscopy and the measurement of the specific resistivity were not possible because the conductivity of the film was too low.
- FIG. 1 is an electron micrograph showing the cross-sectional structure of a semiconductor device according to an embodiment of the present invention.
- FIG. 2 A conceptual view of a schematic internal configuration of a vapor deposition apparatus according to an embodiment of the present invention seen from the side (A) shows the state before the start of deposition, and (b) shows the state after the start of deposition.
- FIG. 3 A schematic view showing the arrangement of crucibles of a vapor deposition apparatus according to an embodiment of the present invention, (a) is a plan view showing an arrangement example of crucibles with respect to the rotation orbit of a substrate holder in the embodiment, (b) is the top view which showed the example of arrangement
- FIG. 4 is a diagram showing current-voltage characteristics of the semiconductor device according to Example 1.
- FIG. 5 A conceptual view of the schematic internal configuration of the vapor deposition apparatus according to another embodiment of the present invention as viewed from the side, showing a state in which the crucible is arranged with an angle so as to concentrate raw material vapor near the substrate.
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/311,886 US8212260B2 (en) | 2006-10-23 | 2007-09-28 | P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material |
CN2007800382540A CN101523983B (zh) | 2006-10-23 | 2007-09-28 | p型半导体材料、半导体元件、有机电致发光元件及p型半导体材料的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006287995A JP4832250B2 (ja) | 2006-10-23 | 2006-10-23 | p型半導体材料、半導体素子、有機エレクトロルミネッセンス素子、及びp型半導体材料の製造方法 |
JP2006-287995 | 2006-10-23 |
Publications (1)
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WO2008050579A1 true WO2008050579A1 (fr) | 2008-05-02 |
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Family Applications (1)
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PCT/JP2007/068971 WO2008050579A1 (fr) | 2006-10-23 | 2007-09-28 | Matériau de semi-conducteur de type p, dispositif à semi-conducteur, dispositif électroluminescent organique et procédé de production d'un matériau de semi-conducteur de type p |
Country Status (4)
Country | Link |
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US (1) | US8212260B2 (ja) |
JP (1) | JP4832250B2 (ja) |
CN (1) | CN101523983B (ja) |
WO (1) | WO2008050579A1 (ja) |
Cited By (2)
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---|---|---|---|---|
WO2010010425A1 (en) | 2008-07-25 | 2010-01-28 | Freescale Semiconductor, Inc. | Heterodyne receiver |
CN103173733A (zh) * | 2013-03-08 | 2013-06-26 | 北京航空航天大学 | 一种高导电性能Ag掺杂Cu2O基p型透明导电薄膜及其制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102064284A (zh) * | 2010-12-01 | 2011-05-18 | 郑州大学 | 一种有机电致发光器件 |
WO2023073404A1 (en) | 2021-10-27 | 2023-05-04 | Silanna UV Technologies Pte Ltd | Methods and systems for heating a wide bandgap substrate |
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WO2000067531A1 (fr) * | 1999-04-30 | 2000-11-09 | Idemitsu Kosan Co., Ltd. | Dispositif organique electroluminescent et procede de fabrication |
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WO2006001194A1 (ja) * | 2004-06-24 | 2006-01-05 | Sumitomo Electric Industries, Ltd. | 蛍光体及びその製法並びにそれを用いた粒子分散型elデバイス |
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US5248631A (en) * | 1990-08-24 | 1993-09-28 | Minnesota Mining And Manufacturing Company | Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
JP4537596B2 (ja) | 2000-02-10 | 2010-09-01 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2003017509A (ja) * | 2001-06-28 | 2003-01-17 | Telecommunication Advancement Organization Of Japan | 半導体層の電気的特性制御方法 |
CN100401543C (zh) | 2004-02-06 | 2008-07-09 | Hoya株式会社 | 半导体材料以及采用该半导体材料的半导体元件 |
-
2006
- 2006-10-23 JP JP2006287995A patent/JP4832250B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-28 US US12/311,886 patent/US8212260B2/en not_active Expired - Fee Related
- 2007-09-28 CN CN2007800382540A patent/CN101523983B/zh not_active Expired - Fee Related
- 2007-09-28 WO PCT/JP2007/068971 patent/WO2008050579A1/ja active Application Filing
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JPH10223377A (ja) * | 1997-02-04 | 1998-08-21 | Internatl Business Mach Corp <Ibm> | 発光ダイオード |
WO2000067531A1 (fr) * | 1999-04-30 | 2000-11-09 | Idemitsu Kosan Co., Ltd. | Dispositif organique electroluminescent et procede de fabrication |
JP2005100893A (ja) * | 2003-09-26 | 2005-04-14 | Sekisui Plastics Co Ltd | エレクトロルミネッセンス素子 |
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WO2010010425A1 (en) | 2008-07-25 | 2010-01-28 | Freescale Semiconductor, Inc. | Heterodyne receiver |
CN103173733A (zh) * | 2013-03-08 | 2013-06-26 | 北京航空航天大学 | 一种高导电性能Ag掺杂Cu2O基p型透明导电薄膜及其制备方法 |
CN103173733B (zh) * | 2013-03-08 | 2014-09-17 | 北京航空航天大学 | 一种高导电性能Ag掺杂Cu2O基p型透明导电薄膜及其制备方法 |
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US20100078626A1 (en) | 2010-04-01 |
US8212260B2 (en) | 2012-07-03 |
CN101523983B (zh) | 2011-08-10 |
CN101523983A (zh) | 2009-09-02 |
JP4832250B2 (ja) | 2011-12-07 |
JP2008108471A (ja) | 2008-05-08 |
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