WO2008047458A1 - Appareil d'alignement d'une tranche utilisant un masque de métal - Google Patents

Appareil d'alignement d'une tranche utilisant un masque de métal Download PDF

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Publication number
WO2008047458A1
WO2008047458A1 PCT/JP2006/320997 JP2006320997W WO2008047458A1 WO 2008047458 A1 WO2008047458 A1 WO 2008047458A1 JP 2006320997 W JP2006320997 W JP 2006320997W WO 2008047458 A1 WO2008047458 A1 WO 2008047458A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
metal mask
holder
mask
alignment apparatus
Prior art date
Application number
PCT/JP2006/320997
Other languages
English (en)
Japanese (ja)
Inventor
Seichin Kinuta
Masakatsu Shimabukuro
Original Assignee
Optnics Precision Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optnics Precision Co., Ltd. filed Critical Optnics Precision Co., Ltd.
Priority to JP2008539667A priority Critical patent/JP5138600B2/ja
Priority to PCT/JP2006/320997 priority patent/WO2008047458A1/fr
Publication of WO2008047458A1 publication Critical patent/WO2008047458A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Definitions

  • the present invention relates to a wafer alignment apparatus for semiconductor devices, and more particularly,
  • a wafer mask is positioned using a magnetic mask, and a magnetic material that does not have a holding power in the polymerization of the wafer and the metal mask and a metal mask that performs ultra-fine positioning of the metal mask by controlling the magnetic force of an electromagnet with an electromagnet are used.
  • the present invention relates to a wafer alignment apparatus.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2000-0100
  • Patent Document 2 Japanese Patent Laid-Open No. 2 085-8 9 47
  • Patent Document 2 describes a metal mask made of a magnetic material for alignment of a metal mask and a wafer in a sputter deposition apparatus.
  • a metal mask is arranged on the film-forming side of the substrate to be deposited, and sputtering using two or more pairs of multi-pole magnets, N pole and S pole, on a holder made of a flat nonmagnetic material.
  • An apparatus has been proposed (see Fig. 1 of Patent Document 2).
  • none of the technical matters described in Patent Document 1 and Patent Document 2 in the background art described above are suitable for an alignment apparatus using an ultra-precise metal mask.
  • Patent Document 1 in order to increase the accuracy in alignment, not only the mechanism of the optical system is complicated and expensive, but also the operation is not easy. Furthermore, since the metal mask is a magnetic material and the holder is a non-magnetic material, the technique described in Patent Document 2 is not completely fixed to the holder. Accurate alignment with the wafer may not be possible.
  • the present invention provides an alignment device that can obtain an accuracy of ⁇ 0.5 / m at 100 mm, for example, using a metal mask that can set an expansion coefficient that is a characteristic with respect to temperature to be extremely low. It is an object. Disclosure of the invention
  • the wafer alignment apparatus using the metal mask of the present invention is for aligning the wafer 1 and the metal mask 3 when a predetermined semiconductor element circuit pattern is vapor-deposited on the wafer 1. It has the structure of this.
  • the alignment apparatus of the present invention includes a table 6 capable of driving the wafer 1 in the X-axis direction, the y-axis direction, the z-axis direction, and a predetermined ⁇ direction, and a magnetic material having no coercive force on the table 6.
  • the magnetic material having no holding force in this specification is composed of samarium cobalt, ferrite, alnico (iron (F e), aluminum (A 1), nickel (N i), copper (C u), or the like.
  • the wafer alignment apparatus using the metal mask of the present invention is for aligning the wafer 1 and the metal mask 3 when a predetermined semiconductor element circuit pattern is deposited on the wafer 1.
  • the table 6 is configured to be driven in the X-axis direction, the y-axis direction, the z-axis direction, and a predetermined ⁇ direction.
  • the workpiece receiving plate 14 placed on the wafer holder 2 is made of a magnetic material having no coercive force, and is disposed opposite to the metal mask 3.
  • a metal mask 3 for forming a semiconductor element circuit pattern deposited on the wafer 1 is stretched over a suction frame 16.
  • the suction frame 16 on which the metal mask 3 is stretched is fixed by suction, for example, by suction means 8.
  • the overlapping means 5 is for aligning the overlapping positions of the wafer 1 and the metal mask 3.
  • the superposition means 5 includes, for example, a magnetic body 15 and an electromagnetic coil 5 that generate magnetic force by a direct current or alternating current control signal sent from the control means 7. It can consist of a. Based on the control signal, the control means 7 controls the magnetic force of the superposition means 5 so that the wafer 1 and the metal mask 3 are brought into close contact with or separated from each other, and the wafer holder 2 and the mask holder 4 are brought into close contact with or separated from each other.
  • a special mechanical configuration for performing the control can be eliminated.
  • the superposition means 5 is provided with the electromagnetic coil 5a as described above, and in the configuration for controlling the electromagnetic force against the close contact or separation between the wafer 1 and the metal mask 3, the wafer 1 and the At the time of alignment with the metal mask 3, the electromagnetic coil 5a can be set to a state in which the alignment operation can be easily performed without any magnetic force.
  • a direct current control signal is sent from the control means 7 to the electromagnetic coil 5 a, and the electromagnetic coil 5 a and a core having a coercive force provided as a magnetic body 15 are attached to the workpiece receiving plate 14.
  • a magnetic force is generated, and the wafer 1 and the metal mask 3 can be held in a tightly fixed state by an attractive force due to the magnetic force with respect to the suction frame 16 to which the metal mask 3 is attached.
  • the wafer 1 and the metal mask 3 can be freely set in an aligned state, and both can be closely fixed by a control signal from the control means 7.
  • the superposition means 5 As another configuration of the superposition means 5, at least one electromagnetic coil 5a is provided, and when the wafer 1 and the metal mask 3 are aligned, the wafer 1 and the metal mask 3 are freely attached. It can be set so that it can be aligned.
  • the control means 7 outputs a DC signal having a polarity that generates a suction force to the workpiece receiving plate 14 as a control signal. It is supplied to the magnetic coil 5a, and is closely fixed at a position where the wafer 1 and the metal mask 3 face each other.
  • the superposition means 5 can perform positioning and separation of the wafer 1 and the metal mask 3 quickly and freely by a control signal for the electromagnetic coil 5a.
  • An alloy such as an iron-nickel alloy is used as a material that does not have a coercive force to constitute the work receiving plate 14, and samarium cobalt, ferrite, or alnico is used as a material that has a coercive force to constitute the magnetic body 15. Is preferably used.
  • the wafer 1 and the metal mask 3 can be aligned or the wafer 1 can be vapor-deposited by the mask, or the vapor-deposition process. After the completion of the process, the superposition means 5 can easily and quickly bring the wafer 1 and the metal mask 3 into close contact or separation by the control signal for the electromagnetic coil 5a.
  • the wafer 1 and the metal mask 3 are aligned while the magnetic body 15 is demagnetized and has no magnetic force.
  • a direct current control signal is applied to the electromagnetic coil 5a to set the wafer holder 2 and the mask holder 4 in a close contact state.
  • a predetermined semiconductor element circuit pattern is deposited on the wafer 1.
  • the superimposing means 5 is a combination of an electromagnetic coiner and a magnetic material, and by simply sending a control signal from the control means 7 to the electromagnetic coil, the wafer 1 and the metal mask 3 can be easily adhered or separated and free. In addition to this, various types of control signals can be selected. Further, according to the configuration of the present invention, the superposition means 5 includes an electromagnetic coil and a magnetic material made of a magnetic material having no holding force, and the wafer 1 and the meta At the time of alignment with the magnetic mask 3, the magnetic material made of a magnetic material having no holding force is demagnetized by the control signal from the control means 7 to the electromagnetic coil, and the wafer 1 and the metal mask 3 are freely aligned. It is set in a state where it can be done, and after both positioning is completed, both are closely fixed.
  • FIG. 1 is a schematic cross-sectional view of an essential part showing an embodiment of a wafer alignment apparatus using a metal mask of the present invention.
  • FIG. 2 (a) is a schematic cross-sectional view of the relevant part showing the overall configuration of a wafer alignment apparatus using the metal mask of the present invention.
  • FIG. 2 (b) is a schematic cross-sectional view of an essential part showing a state in which the wafer holder 2 and the mask holder 4 are set in a close contact state in a wafer manufacturing process using the alignment apparatus shown in FIG. 2 (a). is there.
  • Fig. 2 (c) is a schematic cross-sectional view of the relevant part showing the state in which the wafer 1 and the metal mask 3 are separated after the completion of vapor deposition in the wafer manufacturing process using the alignment apparatus described in Fig. 2 (a). It is.
  • FIG. 3 is a flow chart showing a process of forming a circuit pattern by vapor deposition on a wafer by the wafer alignment apparatus using the metal mask in the present invention.
  • FIG. 1 is a schematic cross-sectional view of an essential part showing an embodiment of a wafer alignment apparatus using a metal mask of the present invention.
  • FIGS. 2 (a) to 2 (c) are schematic cross-sectional views showing the main part of the wafer manufacturing process in the wafer alignment apparatus using the metal mask of the present invention.
  • a wafer alignment apparatus 100 using a metal mask according to the present invention is used for forming semiconductor elements constituting various electronic circuits.
  • the mask holder 4 that sucks the suction frame 16 by the suction force of the suction means 8, the superposition means 5 that brings the wafer holder 2 and the mask holder 4 into close contact with each other, or the wafer holder 2, and the wafer holder 2.
  • control means 7 including a power source so as to generate a control signal.
  • the wafer holder 2 includes a work receiving plate 14 provided at the upper part, a magnetic body 15 and an electromagnetic coil 5 a provided at the lower part, and a concave part 2 ′ in which the work receiving plate 14 is provided at the upper part.
  • the work receiving plate 1 4 is at least composed of a magnetic substance 1 5, and the fixing frame 1 3 for fixing the electromagnetic coil 5 a .
  • a wafer 1 provided with a wafer-side alignment mark 10 is fitted and positioned in a wafer mounting recess 14 ⁇ provided on the workpiece receiving plate 14.
  • the workpiece receiving plate for the rate 14 a material having no coercive force, for example, an alloy such as an iron-nickel alloy is used.
  • a material having a coercive force is used as the core of the magnetic body 15, for example, summary cobalt, ferrite, alnico. Is used.
  • the mask holder 4 is provided at a lower portion, and a suction frame 16 that sucks and lifts the metal mask 3 from above, a suction means 8 that sucks the metal mask 3 to the suction frame 16, and the suction means 8 And an air suction hole 9 connecting the suction frame 16 and an observation window 18 for observing the mask side alignment mark 11.
  • the table 6 is driven in the X-axis direction, the y-axis direction, the z-axis direction, and a predetermined ⁇ direction by the driving device 6 ′ to adjust the position and angle of the wafer 1 and the metal mask 3. Further, the superposing means 5 is provided with a connector 12 for electrical connection so that a control signal from the control means 7 is supplied.
  • the magnetic body 15 is composed of a core housed in the electromagnetic coil 5a as a magnetic field generating means. For example, alnico is used as described above.
  • the superposition means 5 includes the electromagnetic coil 5 a and the magnetic body 15, and is supplied with a control signal from the control means 7, and generates magnetic force by the electromagnetic coil 5 a and the magnetic body 15. As it occurs, its electromagnetic force is controlled.
  • the two-field microscope camera 17 moves the table 6 from the observation window 18 until the wafer side alignment mark 10 and the mask side alignment mark 11 are observed to coincide. Since the wafer alignment apparatus 100 using the metal mask is a schematic diagram, some mechanisms are omitted.
  • FIG. 3 is a flow chart showing a process of forming a circuit pattern by vapor deposition on a wafer using a wafer alignment apparatus using a metal mask according to the present invention.
  • a wafer 1 and a metal mask 3 are prepared in advance and are in a ready state (steps 31 and 32).
  • the alignment apparatus 100 using the metal mask of the present invention has the mask holder 4 adsorbed to the adsorbing means 8 using air, and the wafer 1 is held on a wafer receiving plate 14 provided on the wafer holder 2.
  • the metal mask 3 is stretched over the suction frame 16 of the mask holder 4 so as to be aligned with the position of the mask holder 4, and the mask holder 4 is overlaid on the wafer holder 2.
  • the mask holder 4 can easily approach the wafer holder 2.
  • the magnetic force from the superposition means 5 is made substantially zero, and the work receiving plate 14 is brought into a demagnetized state.
  • the wafer holder 2 is kept in a state in which no magnetic force acts on the mask holder 4, and thus can be freely positioned.
  • the wafer side alignment mark 1 0 and the mask side alignment mark 1 Alignment with 1 can be performed accurately (Step 3 3).
  • the attractive force due to the magnetic force of the magnetic material 15 which is a magnetic material having a holding force is used. That is, the wafer holder 2 and the mask holder 4 which were separated from each other were attracted to each other by the electromagnetic force of the magnetic body 15 generated by the application of the DC signal from the control means 7 and set in a close contact state, and the two were combined. (Step 3 4). Thereafter, when the vapor deposition process is completed through a predetermined process, a predetermined circuit pattern is formed on the wafer surface by the metal mask 3, and the vapor deposition is completed (step 35).
  • the adsorption frame 16 is made of a material having a coercive force, such as a nickel alloy, an iron alloy, or an aluminum alloy having magnetism.
  • the magnetic force and magnetic direction of the magnetic body 15 can be changed with a single electromagnetic coil. Since the workpiece receiving plate 14 is demagnetized by the application of an AC signal from the control means 7, the adsorption force is lost due to the demagnetization state between the adsorption frame 16 and the wafer holder 2 and the mask holder 4 are particularly Since there is no effect of residual magnetism, wafer 1 and metal mask 3 can be separated smoothly.
  • the wafer holder 2 and the mask holder 4 are both made of a material having a coercive force, such as a nickel alloy, an iron alloy, or an aluminum alloy, which has magnetism.
  • the Example of this invention was explained in full detail, this invention is not limited to the said Example.
  • the present invention can be modified in various ways without departing from the matters described in the claims.
  • the mask holder or the wafer holder of the present invention can be changed in design as long as it holds the wafer and the metal mask and can easily align the alignment marks.
  • table driving means, suction means, and control means constituting the present invention known or Use well-known ones and change the design as necessary.
  • the superposition means one is a magnetic body having a holding force and the other is an electromagnetic coil, but the other is an electromagnetic coil and the other is a magnetic body, and the reverse combination, or other various types. Combinations are possible.
  • the electromagnetic coil and the magnetic body having a holding force at the center are arranged as the superimposing means in the above embodiment, but the magnetic body is arranged on the outside, and the center of the magnetic body is arranged. It is possible to configure in various combinations such as a configuration in which an electromagnetic coil is disposed in a plurality of layers, or a plurality of electromagnetic coils and a magnetic material.
  • the wafer can be moved in various directions such as the X-axis direction, the y-axis direction, the z-axis direction, and the predetermined ⁇ direction.
  • the wafer and the metal mask can be aligned extremely accurately using a two-field microscope camera or the like while being held on the wafer holder and no magnetic force is generated.
  • Fixing or releasing can be freely selected by a control signal to an electromagnetic coil provided as the magnetic field generating means, and, for example, an accuracy of 0.5 / im can be obtained for 100 mm.
  • the debonding state of the mask holder can be used to release the bond between the wafer holder and the mask holder, so that the effect of preventing damage to the pattern on the wafer can also be obtained. It is done.
  • the control of the close contact or separation between the wafer holder and the mask holder by the superposition means can be performed by the control signal supplied to the electromagnetic coil, there is an advantage that the mechanical configuration can be extremely reduced.
  • the wafer holder places the wafer via a workpiece receiving plate made of a magnetic material having no coercive force, the wafer does not float due to the effect of residual magnetization, and stable attachment is possible. It became possible.
  • the wafer holder and the mask can be controlled by selecting the optimum material for the constituent element, and by controlling the electromagnetic force by the electric control signal in combination with each magnetic material in the polymerization means. Since close contact with or separation from the holder is possible, there is an advantage that various forms can be selected as the control signal.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention porte sur un appareil d'alignement (100) comportant au moins une table (6) qui peut déplacer une tranche (1) selon les axes des abscisses et des ordonnées et l'axe z ainsi que dans une direction T prescrite; un support de tranche (2) la plaçant (1) sur la table (6) par l'intermédiaire d'une plaque réceptrice (14) composé d'un matériau magnétique sans force coercitive; un support de masque (4) faisant face au support de tranche (2) et servant à fixer un cadre de succion (16) à la suite de quoi le masque métallique (3) est étiré; un moyen d'alignement (5) des positions de la tranche (1) et du masque métallique (3); et un moyen aisé de commande (7) de l'adhésion ou de la séparation de la tranche (1) d'avec le masque métallique (3) par application d'un courant continu ou alternatif au moyen d'alignement (5).
PCT/JP2006/320997 2006-10-17 2006-10-17 Appareil d'alignement d'une tranche utilisant un masque de métal WO2008047458A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008539667A JP5138600B2 (ja) 2006-10-17 2006-10-17 メタルマスクを用いたウエハのアライメント装置
PCT/JP2006/320997 WO2008047458A1 (fr) 2006-10-17 2006-10-17 Appareil d'alignement d'une tranche utilisant un masque de métal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/320997 WO2008047458A1 (fr) 2006-10-17 2006-10-17 Appareil d'alignement d'une tranche utilisant un masque de métal

Publications (1)

Publication Number Publication Date
WO2008047458A1 true WO2008047458A1 (fr) 2008-04-24

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106920767A (zh) * 2017-03-29 2017-07-04 华东师范大学 一种掩膜版与样品的贴合及分离装置
EP3133183A4 (fr) * 2014-04-18 2017-12-06 Boe Technology Group Co. Ltd. Dispositif magnétique, dispositif d'évaporation et procédé d'évaporation
CN107858650A (zh) * 2017-11-22 2018-03-30 京东方科技集团股份有限公司 一种蒸镀设备和蒸镀方法
CN110129721A (zh) * 2019-04-26 2019-08-16 华东师范大学 一种用于铁磁性掩膜版的热蒸发镀膜器基板
CN112442657A (zh) * 2020-11-24 2021-03-05 合肥京东方卓印科技有限公司 蒸镀方法、蒸镀装置及其吸附组件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004106437A (ja) * 2002-09-20 2004-04-08 Renesas Technology Corp スクリーン印刷方法、印刷マスクの製造方法
JP2006188731A (ja) * 2005-01-06 2006-07-20 Seiko Epson Corp マスク成膜方法，マスク

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004106437A (ja) * 2002-09-20 2004-04-08 Renesas Technology Corp スクリーン印刷方法、印刷マスクの製造方法
JP2006188731A (ja) * 2005-01-06 2006-07-20 Seiko Epson Corp マスク成膜方法，マスク

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3133183A4 (fr) * 2014-04-18 2017-12-06 Boe Technology Group Co. Ltd. Dispositif magnétique, dispositif d'évaporation et procédé d'évaporation
CN106920767A (zh) * 2017-03-29 2017-07-04 华东师范大学 一种掩膜版与样品的贴合及分离装置
CN106920767B (zh) * 2017-03-29 2023-06-09 华东师范大学 一种掩膜版与样品的贴合及分离装置
CN107858650A (zh) * 2017-11-22 2018-03-30 京东方科技集团股份有限公司 一种蒸镀设备和蒸镀方法
CN110129721A (zh) * 2019-04-26 2019-08-16 华东师范大学 一种用于铁磁性掩膜版的热蒸发镀膜器基板
CN112442657A (zh) * 2020-11-24 2021-03-05 合肥京东方卓印科技有限公司 蒸镀方法、蒸镀装置及其吸附组件

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JP5138600B2 (ja) 2013-02-06

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