WO2008041294A1 - Chuck device for substrate bonding machine and method of neutralizing charges on substrate - Google Patents

Chuck device for substrate bonding machine and method of neutralizing charges on substrate Download PDF

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Publication number
WO2008041294A1
WO2008041294A1 PCT/JP2006/319541 JP2006319541W WO2008041294A1 WO 2008041294 A1 WO2008041294 A1 WO 2008041294A1 JP 2006319541 W JP2006319541 W JP 2006319541W WO 2008041294 A1 WO2008041294 A1 WO 2008041294A1
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WO
WIPO (PCT)
Prior art keywords
substrate
electrostatic chuck
electrostatic
chuck
bonding machine
Prior art date
Application number
PCT/JP2006/319541
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshikazu Ohtani
Original Assignee
Shin-Etsu Engineering Co., Ltd.
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Filing date
Publication date
Application filed by Shin-Etsu Engineering Co., Ltd. filed Critical Shin-Etsu Engineering Co., Ltd.
Priority to PCT/JP2006/319541 priority Critical patent/WO2008041294A1/en
Publication of WO2008041294A1 publication Critical patent/WO2008041294A1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/02Controlled or contamination-free environments or clean space conditions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04Arrangements of vacuum systems or suction cups
    • B65G2249/045Details of suction cups suction cups

Definitions

  • the present invention relates to a process for manufacturing a flat panel display such as a liquid crystal display (LCD) or a plasma display (PDP), for example, when a substrate such as CF glass or TFT glass is detachably held and bonded.
  • a flat panel display such as a liquid crystal display (LCD) or a plasma display (PDP)
  • LCD liquid crystal display
  • PDP plasma display
  • the present invention relates to a chuck device for a substrate bonding machine used for the above, and a substrate static elimination method using the chuck device.
  • the present invention relates to a chuck device for a substrate bonding machine that electrostatically attracts a substrate to a substrate side of a holding plate and detachably holds the substrate, and a substrate discharging method using the same.
  • a dielectric and an electrode unit are laminated on the entire opposing surfaces of a pair of upper and lower holding plates (surface plate) made of a rigid body such as metal or ceramics.
  • Each of the electrostatic chucks is provided, and suction suction means for assisting suction holding in the atmosphere are additionally provided, and both the substrates are sucked and held by the electrostatic chuck and suction suction means.
  • mutual alignment is performed to bond the force substrates together (see, for example, Patent Document 1).
  • electrostatic chucks electrostatic chucks
  • suction suction means suction conduits
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2003-324144 (Page 3-5, Fig. 1-2)
  • Patent Document 2 Japanese Patent Laid-Open No. 2002-229044 (Pages 10-12, FIGS. 7, 9)
  • glass cullet (shards) may be transported on the glass substrate, especially during setup. If the cullet is squeezed between the electrostatic chuck and the electrostatic chuck, the surface of the electrostatic chuck may be partially broken and broken.
  • the electrostatic chuck In order to prevent this, it is necessary to replace the electrostatic chuck itself whose surface has been destroyed.
  • the electrostatic chuck is fixedly arranged on the entire surface of the holding plate, so that the replacement work at the installation site is difficult and only requires time. Since the operation of the entire line cannot be resumed until this replacement work is completed, there was a problem that the operation rate decreased.
  • Patent Document 2 when the substrate is peeled off from the electrostatic chuck, it is easy to remove the residual charge of the substrate to make it easy to peel off. At that moment, the surface of the substrate is peeled and charged according to the difference in the charge train between the surface material of the electrostatic chuck and the material of the substrate is accumulated on the surface of the substrate. When the separation distance is long, there is a problem in that a discharge occurs to destroy a device such as a TFT element formed on the substrate.
  • the invention described in claim 1 is intended to attach the electrostatic chuck in a replaceable manner without any modification to the substrate side surface of the holding plate.
  • the invention described in claim 2 neutralizes the peeling charge generated on the substrate due to peeling from the electrostatic chuck from a position away from the electrostatic chuck. It is for the purpose.
  • the invention described in claim 3 is characterized in that after the substrate is peeled from the electrostatic chuck, the peeling charge generated on the substrate due to the peeling is removed from the electrostatic chip.
  • the purpose is to remove static from a position away from the backpack.
  • the invention according to claim 1 of the present invention is configured such that an electrostatic chuck formed in a thin plate shape or a film shape is detachably attached to the substrate side surface of the holding plate.
  • the substrate is detachably held on the substrate side surface of the holding plate by the electrostatic attraction force of the thin plate-like or film-like electrostatic chuck.
  • the invention according to claim 2 is provided with separation means for separating the substrate from the electrostatic chuck and forming a static elimination gap between the electrostatic chuck and the substrate in the configuration of the invention according to claim 1.
  • the separation means creates a gap for static elimination between the surface of the electrostatic chuck and the substrate, and changes the voltage of the electrode portion of the electrostatic chuck, thereby neutralizing the charge remaining on the substrate. It is characterized by the addition of a configuration that induces a summing electric field.
  • the invention described in claim 3 is the atmosphere after the substrate is peeled off from the electrostatic chuck of the substrate bonding machine chuck device of the substrate bonding machine according to claim 1, or in a predetermined low vacuum.
  • the voltage of the electrode part of the electrostatic chuck is varied to induce an electric field, and the charge remaining on the substrate is neutralized.
  • the invention according to claim 1 of the present invention is such that the electrostatic chuck formed in a thin plate shape or a film shape is detachably bonded to the substrate side surface of the holding plate to thereby attach the substrate side surface of the holding plate.
  • the substrate is detachably held by the electrostatic chucking force of the thin plate or film electrostatic chuck, and the substrate side surface force of the holding plate is A thin plate-like or film-like electrostatic chuck can be easily removed.
  • the surface of the electrostatic chuck partially breaks down due to the penetration of foreign matter compared to the conventional case where the electrostatic chuck is fixedly arranged on the entire surface of the holding plate.
  • the holding plate and the thin or film-like electrostatic chuck are separate parts, the electrostatic chuck can be easily exchanged for the holding plate even at the installation site.
  • the operation of the entire line can be resumed in a short time, so the operation rate does not decrease and a stable production volume can be expected.
  • the holding plate of the substrate laminating machine that holds the substrate by suction and suction means excluding the electrostatic chuck can be used as it is to provide an electrostatic chuck function.
  • the adsorption performance can be improved.
  • the invention of claim 2 forms a gap for static elimination between the surface of the electrostatic chuck and the substrate by the separating means, and the electrode of the electrostatic chuck By inducing an electric field by varying the voltage of the part, a part of the atmospheric gas such as air is instantaneously ionized and ionized in this electric field part, and these neutralize the charge remaining on the substrate B.
  • the holding plate of a substrate bonding machine that holds and holds substrates by suction suction means other than electrostatic chucks can be provided with a static elimination function to prevent destruction of devices on the substrate due to peeling charging. It becomes possible.
  • the invention of claim 3 fluctuates the voltage of the electrode portion of the electrostatic chuck in the atmosphere where the substrate is separated from the electrostatic chuck or in a predetermined low vacuum. Then, by inducing an electric field, a part of atmospheric gas such as air is instantaneously ionized and ionized in this electric field portion, and these neutralize charges remaining on the substrate.
  • the peeling charge generated on the substrate along with the peeling can be neutralized by the position force away from the electrostatic chuck.
  • the holding plate of a substrate bonding machine that holds and holds substrates by suction suction means other than electrostatic chucks can be provided with a static elimination function to prevent destruction of devices on the substrate due to peeling charging. It becomes possible.
  • LCD liquid crystal display
  • PDP plasma display
  • This substrate bonding machine is a fixed plate formed in a flat plate shape that does not deform (stagnate) with a rigid body such as metal or ceramics as shown in Figs. 1 (a) to 1 (c).
  • a pair of upper and lower holding plates 1, 1 ′ which is a board force, is arranged, and the two substrates A and B are detachably held on the parallel opposing surfaces of these upper and lower holding plates 1, 1 ′.
  • the upper and lower holding plates 1, ⁇ ' are relatively adjusted and moved in the ⁇ ⁇ direction (horizontal direction in the drawing) to obtain substrates A and B.
  • the substrates A and B After aligning each other, at least one of the substrates A and B is peeled off and overlapped by the smooth surface force of the upper and lower holding plates 1, ⁇ ', and then the vacuum break in the vacuum chamber S is performed.
  • the pressure difference between the substrates A and B is pressurized to a predetermined gap by the pressure difference generated between the substrates A and B.
  • the upper and lower holding plates 1, ⁇ 'as shown by the solid line in FIG. 1 (a) can be moved relatively in the Z direction (vertical direction in the drawing) by lifting means (not shown).
  • the substrates A and B transferred by a transfer robot are set on the respective smooth surfaces with the upper and lower holding plates 1 being separated in the vertical direction. Each is retained.
  • the horizontal holding means (not shown) is operated to operate the upper and lower holding plates 1. , 1 'can be adjusted and moved in the XY 0 direction with respect to the other. Rough alignment and fine alignment are sequentially performed as alignment between the held substrates A and B.
  • either one or both of the above-described substrate-side surfaces la and la 'of the upper and lower holding plates 1, 1' that are parallel to each other is used as a chuck device for a substrate bonding machine according to the present invention.
  • the electrostatic chuck 2 formed in the shape of a thin film or thin film is detachably adhered, and one or both of the upper and lower substrates A and B are electrostatically attracted by the electrostatic adsorption force of the thin plate or film-like electrostatic chuck 2
  • the alignment operation of the substrates A and B described above is performed, and the bonding operation of the substrates A and B described above is performed by stopping and peeling off the electrostatic chucking function of one of the electrostatic chucks 2. Is done.
  • the electrostatic chuck 2 is a dielectric 2a formed in a smooth thin plate or thin film with an insulating organic material such as polyimide, polyetheretherketone (PEEK), or polyethylene naphthalate (PEN).
  • an electrode portion 2b that also becomes a conductive paste or a conductive foil cover patterned by screen printing or the like is integrally laminated therein.
  • the electrode portion 2b is formed to be insulated from the surroundings, and is connected to a power source (not shown) for applying a voltage thereto.
  • bipolar electrostatic chuck in which two or more electrode portions 2b are embedded in, for example, a comb shape.
  • an adhesive material is a magnet or a mechanical material. Wonta Attach it so that it cannot be misaligned using a coupling mechanism.
  • the outer peripheral edge of the electrostatic chuck 2 or a mounting portion formed continuously therewith can be formed larger than the substrate side surface la, la 'and can be bent and attached to the side surface. is there.
  • FIGS. 2 (a) and 2 (b) At least the lower holding plate! / And the lower electrostatic chuck ⁇ , a plurality of through-holes 3 as shown in FIGS. 2 (a) and 2 (b) are formed in a straight line in the Z (vertical) direction.
  • the lower substrate B is pushed up by lowering the surface force of the lower electrostatic chuck 2 by controlling the operation so that the gas or other fluid such as nitrogen gas or air is jetted upward.
  • a slight clearance S1 of about 2 to 3 mm, for example, is formed between the back surface B1 of B.
  • the lower electrostatic chuck is formed in the atmosphere or in a predetermined low vacuum in which a gap S1 is formed between the surface of the lower electrostatic chuck 2 and the rear surface B1 of the lower substrate B by the separating means 4.
  • a high voltage is applied between two or more electrode parts 2b embedded in 2 from a high voltage power source (not shown), and is applied during electrostatic chucking of the lower substrate B.
  • This Example 1 is a thin plate on the substrate-side surfaces la and la 'of the upper and lower holding plates 1, 1' as shown in Figs. 1 (&) to (ji) and Fig. 2 (&) (b).
  • the thin-film electrostatic chuck 2 is detachably bonded to each other, and both the upper and lower substrates A and B are electrostatically attracted by the electrostatic adsorption force of the thin plate-like or film-like electrostatic chuck 2, as described above.
  • the alignment operation and the bonding operation are performed in a vacuum, and the upper and lower substrates A and B, which have been bonded, are pushed up by the surface force of the lower electrostatic chuck 2 and between the lower surface B1 of the lower substrate B.
  • Fig. 9 shows a case where the static electricity is removed by forming a slight static elimination gap S1 of about 2 to 3 mm, for example.
  • a pedestal (base) having a rigid body force is provided on the smooth surfaces of the upper and lower holding plates 1, which face each other in parallel. It is preferable that the electrostatic chuck 2 is attached by an adhesive means, with lb, 1W protruding and having a smooth base surface at the tip surface as the substrate side surface la, la ′.
  • At least a base lb 'of the lower holding plate 1' is opened with a plurality of through holes 3 in which the separating means 4 is provided.
  • suction holes 5a are provided at appropriate intervals on the bases lb, 11 of the upper and lower holding plates 1, as suction suction means 5 for sucking and holding in the atmosphere. Is connected to a suction source (not shown) such as a vacuum pump.
  • the electrostatic chuck 2 is also opposed to each suction hole 5a and the through-holes 2c. Open the doors to communicate with each other.
  • a thin plate or thin film electrostatic chuck 2 is supported on a base lb of the upper holding plate 1 by a guide means (not shown) so as to be reciprocally movable in the vertical direction.
  • the upper electrostatic chuck 2 is drawn toward the smooth substrate side surface la of the pedestal lb to attach it detachably, and the isolation means for separating the electrostatic chuck 2 from the substrate side surface la.
  • Means 7 are provided.
  • the adhering means 6 includes, for example, a magnet 6a such as a permanent magnet or an electromagnet, and a magnetic field between the surface la on the substrate side of the upper holding plate 1 and the surface of the upper electrostatic chuck 2 facing the upper surface la.
  • a magnet attracted by the magnet and a magnetic body 6b such as a metal formed into a film by sputtering or the like are fixedly arranged.
  • the separating means 7 is directed toward the surface of the upper electrostatic chuck 2 from the suction hole 5a of the suction suction means 5 provided on the substrate side surface la of the upper holding plate 1, for example, nitrogen gas or air.
  • a force that injects gas or other fluid and presses the electrostatic chuck 2, or the electrostatic chuck 2 is pressed by a driving body that reciprocates up and down, such as an air cylinder,
  • a driving body that reciprocates up and down, such as an air cylinder
  • the electrostatic chuck in the form of a thin plate or thin film toward the substrate side surface la of the upper holding plate 1 by the operation of the suction adsorption means 5 or the adhesion means 6 2 and pulling the upper and lower substrates A and B transferred by the transfer robot in this state along the smooth substrate side surface la, and the upper electrostatic chuck attached to the upper holding surface la. 2 and the lower electrostatic chuck 2 mounted on the substrate-side surface 1 of the lower holding plate, respectively, are electrostatically attracted and held.
  • the surface of the electrostatic chuck 2 such as the dielectric 2a is formed by sandwiching the cullet between the electrostatic chucks 2 and 2 along with the electrostatic adsorption between the upper and lower substrates A and B. May break down and break down.
  • the upper and lower holding plates 1, 1 ′ are moved closer to each other by the operation of the elevating means as shown by a two-dot chain line in FIG. 1 (a) to form a vacuum chamber S, and the inside of the vacuum chamber S is predetermined.
  • the upper and lower holding plates 1, ⁇ ' are adjusted and moved relative to each other in the ⁇ direction, and the upper and lower substrates A and B are aligned.
  • the electrostatic chuck 2 above the substrate-side surface la of the upper holding plate 1 is moved upward by the operation of the separating means 7 as shown in FIG.
  • the substrate A is pulled away while being electrostatically attracted, and the upper substrate A is moved toward the lower substrate B.
  • the upper and lower substrates A and B are instantaneously pressed with the annular adhesive C interposed therebetween, and the two are sealed and overlapped.
  • the inside of the vacuum chamber S is returned to the atmospheric pressure, and the pressure is evenly applied by the pressure difference generated inside and outside of both the substrates A and B.
  • the pressure difference generated inside and outside the both substrates A and B reaches the predetermined gap.
  • the bonding process is completed by crushing.
  • the residual suction force of the upper electrostatic chuck 2 is extremely reduced by passing through the Paschen discharge region where the degree of vacuum in the vacuum chamber S is about several tens of Pa to several thousand Pa. .
  • the upper substrate A held by the adhesive force of the annular adhesive C and the upper electrostatic chuck 2 may come in contact with each other, and may be difficult to peel off.
  • the upper electrostatic chuck 2 from which the surface force of the upper substrate A is peeled adheres to the upper base surface la, and thereafter, the upper and lower holding plates 1, 1 'are separated from each other by the operation of the lifting means. Move in the direction to return to the initial state.
  • the surface material of the electrostatic chuck 2 is applied to the rear surface B1 of the lower substrate B.
  • the charge corresponding to the difference in the charge train between the material of the lower substrate B and the lower substrate B is caused by the peeling charge S that accumulates on the back surface B1 of the lower substrate B.
  • This static electricity varies depending on the size and processing conditions of the lower substrate B.
  • the voltage may be 20 KV or more as a ground voltage, and when this accumulated charge is discharged, the substrates A and B Devices such as TFT elements formed above may be destroyed, and the device characteristics may change partially even without destruction.
  • the upper and lower substrates A and B that have completed the bonding process are opened on the substrate-side surface 1 of the lower holding plate and the lower electrostatic chuck 2 as shown in FIGS. 2 (a) and 2 (b).
  • the upper and lower substrates that have been bonded together by raising the lift pin from the plurality of perforated holes 3 as the separating means 4 or by jetting a gas or other fluid such as nitrogen gas or air upward, for example.
  • the surface force of the lower electrostatic chuck 2 is also pushed up by A and B, and a slight clearance S1 of about 2 to 3 mm, for example, is formed between the lower substrate B and the back surface B1.
  • an electric field (specifically an alternating electric field) is induced in the vicinity thereof.
  • the gap between the surface of the lower bipolar electrostatic chuck 2 and the lower surface B1 of the lower substrate B with the lift pin of the separating means 4 is about 2 mm
  • the applied voltage is ⁇ 2500 V
  • the withstand voltage of the lower board B decreased to about 1/3, and it decreased to about 1/3 each time it was performed again.
  • the charging voltage can be drastically reduced in a short time. It was.
  • the substrate bonding machine for bonding two substrates A and B in a vacuum has been described.
  • the present invention is not limited to this, and the substrate for bonding substrates A and B in the atmosphere. Even in this case, the same effect as that of the above-described vacuum bonding machine can be obtained.
  • a thin plate-like or thin-film-like electrostatic is applied to the substrate side surface la of the upper holding plate 1.
  • the chuck 2 is supported so that it can reciprocate in the vertical direction, and the upper substrate A is moved toward the lower substrate B by separating the upper electrostatic chuck 2 while the upper substrate A is electrostatically attracted.
  • both substrates A and B are bonded together with agent C, the present invention is not limited to this. Both substrates A and B may be overlapped by other bonding methods that do not move the upper electrostatic chuck 2 up and down. .
  • FIG. 1 is a longitudinal front view showing an embodiment of a chuck device for a substrate bonding machine of the present invention, and (a) to (c) show a method for bonding substrates together in the order of steps.
  • FIG. 2 A longitudinal front view showing the state of static elimination, and (a) and (b) are shown in order of operation steps.

Abstract

An electrostatic chuck is replaceably installed on the substrate-side surface of a holding plate without any modification on the surface. Electrostatic chucks (2) formed in a thin plate-like shape or a membrane-like shape are respectively detachably attracted to the substrate-side surfaces (la, la') of the holding plates (1, 1'). Because the substrate-side surfaces (la, la') of the holding plates (1, 1') are formed integrally with the thin sheet-like or membrane-like electrostatic chucks (2), the substrates (A, B) are detachably held by electrostatic attracting force of the thin sheet-like or membrane-like electrostatic chucks (2), and the thin sheet-like electrostatic chucks (2) can be easily detached from the substrate-side surfaces (la, la') of the holding plates (1, 1').

Description

基板貼り合わせ機用チャック装置及び基板除電方法  Substrate bonding machine chuck device and substrate neutralizing method
技術分野  Technical field
[0001] 本発明は、例えば液晶ディスプレー(LCD)やプラズマディスプレー(PDP)などの フラットパネルディスプレーの製造過程にぉ 、て、 CFガラスや TFTガラスなどの基板 を着脱自在に保持して貼り合わせる際に使用する基板貼り合わせ機用チャック装置 、及びそれを使用した基板除電方法に関する。  [0001] The present invention relates to a process for manufacturing a flat panel display such as a liquid crystal display (LCD) or a plasma display (PDP), for example, when a substrate such as CF glass or TFT glass is detachably held and bonded. TECHNICAL FIELD The present invention relates to a chuck device for a substrate bonding machine used for the above, and a substrate static elimination method using the chuck device.
詳しくは、保持板の基板側に基板を静電吸着して着脱自在に保持する基板貼り合 わせ機用チャック装置及び、それを使用した基板除電方法に関する。  Specifically, the present invention relates to a chuck device for a substrate bonding machine that electrostatically attracts a substrate to a substrate side of a holding plate and detachably holds the substrate, and a substrate discharging method using the same.
背景技術  Background art
[0002] 従来、この種の基板貼り合わせ機用チャック装置として、金属やセラミックスなどの 剛体で構成される上下一対の保持板 (定盤)の対向する面全体に、誘電体と電極部 が積層された静電チャックを夫々設けると共に、大気中における吸着保持を補助す るための吸引吸着手段が追加して夫々設けられ、これらの静電チャック及び吸引吸 着手段により両基板を夫々吸着保持して、相互の位置合わせを行って力 基板同士 の貼り合わせを行うものがある(例えば、特許文献 1参照)。  Conventionally, as a chuck device for this type of substrate bonding machine, a dielectric and an electrode unit are laminated on the entire opposing surfaces of a pair of upper and lower holding plates (surface plate) made of a rigid body such as metal or ceramics. Each of the electrostatic chucks is provided, and suction suction means for assisting suction holding in the atmosphere are additionally provided, and both the substrates are sucked and held by the electrostatic chuck and suction suction means. In some cases, mutual alignment is performed to bond the force substrates together (see, for example, Patent Document 1).
また、上下一対の保持板 (背面保持板)の対向する面全体に静電チャック (静電チ ャック部)を夫々取着すると共に、吸引吸着手段 (吸着管路)が夫々形成され、これら 静電チャックカゝら基板を剥離する時には、電圧の印加を停止すると共に、静電チヤッ クの端面に接続された導電物、又は静電チャック部の吸着面に設けられた基板と接 触する導電物をフレームグランドに接続して、静電吸着時に静電チャックの誘電層及 び基板に蓄積した電荷をフレームグランドに逃がすことにより、基板の剥離を容易に するか、或いは該フレームグランドに代えてスイッチング電源に接続し、誘電層及び 基板に蓄積した電荷を打ち消すように電流を流したり、基板の裏面に接触する導電 物及び基板の表面に接触する接触ピン力 基板の両面に蓄積した電荷を打ち消す ことにより、基板の剥離を容易にして剥離帯電を防止しているものもある(例えば、特 許文献 2参照)。 [0003] 特許文献 1 :特開 2003— 324144号公報(第 3— 5頁、図 1— 2) In addition, electrostatic chucks (electrostatic chucks) are respectively attached to the entire opposing surfaces of a pair of upper and lower holding plates (back holding plates), and suction suction means (suction conduits) are formed, respectively. When peeling the substrate from the electric chuck holder, the application of voltage is stopped and the conductive material connected to the end face of the electrostatic chuck or the conductive material in contact with the substrate provided on the adsorption surface of the electrostatic chuck section Is connected to the frame ground to release the charges accumulated on the dielectric layer of the electrostatic chuck and the substrate during electrostatic adsorption to the frame ground, thereby facilitating peeling of the substrate or switching instead of the frame ground. Connected to the power supply, the current flows to cancel the charge accumulated on the dielectric layer and the substrate, or the conductive pin that contacts the back surface of the substrate and the contact pin force that contacts the surface of the substrate Charge accumulated on both sides of the substrate By canceling the separation of the substrate to facilitate some are to prevent separation charge (for example, see Patent Document 2). [0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2003-324144 (Page 3-5, Fig. 1-2)
特許文献 2 :特開 2002— 229044号公報(第 10— 12頁、図 7, 9)  Patent Document 2: Japanese Patent Laid-Open No. 2002-229044 (Pages 10-12, FIGS. 7, 9)
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0004] このような基板貼り合わせ機用チャック装置を用いた液晶ディスプレーの生産ライン などでは、特にセットアップ中にガラスのカレット (破片)などがガラス基板上に運搬さ れることがあり、基板との静電吸着に伴って該カレットを静電チャックとの間に嚙み込 むことで、この静電チャックの表面が部分的に破壊して故障することがある。 [0004] In a production line of a liquid crystal display using such a chuck for a substrate bonding machine, glass cullet (shards) may be transported on the glass substrate, especially during setup. If the cullet is squeezed between the electrostatic chuck and the electrostatic chuck, the surface of the electrostatic chuck may be partially broken and broken.
静電チャックの表面が一部分でも破壊すると、この静電チャック全体の機能が停止 すると共に、高電圧が力かる電極部が露出するため、特に真空中貼り合わせ機のよう な真空に近い状態で用いられる場合には、金属製台座のアース部との間でアーク放 電したり、或いは真空引きの際のパッシェン領域においてプラズマ放電するなど、過 電流を引き起こす不具合が生ずる可能性があった。  If even a part of the surface of the electrostatic chuck breaks, the function of the entire electrostatic chuck stops and the electrode part where high voltage is applied is exposed, so it is used in a state close to a vacuum, especially in a vacuum laminating machine. In such a case, there is a possibility that a fault causing an overcurrent may occur, such as an arc discharge between the ground portion of the metal pedestal and a plasma discharge in the Paschen area during vacuuming.
これを防止するには表面が破壊された静電チャック自体を交換する必要がある。 しかし乍ら、従来の基板貼り合わせ機用チャック装置では、保持板の表面全体に対 して静電チャックを固定配置しているため、設置現場における交換作業が困難で時 間を要するだけでなぐこの交換作業が完了するまでライン全体の稼働を再開できな いことから、稼働率が低下するという問題があった。  In order to prevent this, it is necessary to replace the electrostatic chuck itself whose surface has been destroyed. However, in the conventional chuck device for a substrate bonding machine, the electrostatic chuck is fixedly arranged on the entire surface of the holding plate, so that the replacement work at the installation site is difficult and only requires time. Since the operation of the entire line cannot be resumed until this replacement work is completed, there was a problem that the operation rate decreased.
また、特許文献 2の場合には、静電チャックから基板を剥離する時に基板の残留電 荷を除電して剥離し易くするだけで、静電チャックに基板が付いている状態力も剥離 させると、その瞬間に基板の表面には、該静電チャックの表面材料と基板の材質との 帯電列の差に応じた電荷が基板の表面に溜まる剥離帯電が起こるため、これら静電 チャックの表面と基板との剥離距離が長い場合には、放電が起きて基板上に形成さ れている例えば TFT素子などのデバイスを破壊することもあるという問題があった。  In the case of Patent Document 2, when the substrate is peeled off from the electrostatic chuck, it is easy to remove the residual charge of the substrate to make it easy to peel off. At that moment, the surface of the substrate is peeled and charged according to the difference in the charge train between the surface material of the electrostatic chuck and the material of the substrate is accumulated on the surface of the substrate. When the separation distance is long, there is a problem in that a discharge occurs to destroy a device such as a TFT element formed on the substrate.
[0005] 本発明のうち請求項 1記載の発明は、保持板の基板側表面に対して何ら手を加え ることなく静電チャックを交換可能に取付けることを目的としたものである。 [0005] Of the present invention, the invention described in claim 1 is intended to attach the electrostatic chuck in a replaceable manner without any modification to the substrate side surface of the holding plate.
請求項 2記載の発明は、請求項 1に記載の発明の目的に加えて、静電チャックから の剥離に伴って基板に発生した剥離帯電を静電チャックと離れた位置から除電する ことを目的としたものである。 In addition to the object of the invention described in claim 1, the invention described in claim 2 neutralizes the peeling charge generated on the substrate due to peeling from the electrostatic chuck from a position away from the electrostatic chuck. It is for the purpose.
請求項 3記載の発明は、請求項 1または 2に記載の発明の目的に加えて、静電チヤ ックから基板を剥離した後に、その剥離に伴って基板に発生した剥離帯電を静電チ ャックと離れた位置から除電することを目的としたものである。  In addition to the object of the invention described in claim 1 or 2, the invention described in claim 3 is characterized in that after the substrate is peeled from the electrostatic chuck, the peeling charge generated on the substrate due to the peeling is removed from the electrostatic chip. The purpose is to remove static from a position away from the backpack.
課題を解決するための手段  Means for solving the problem
[0006] 前述した目的を達成するために、本発明のうち請求項 1記載の発明は、保持板の 基板側表面に、薄板状又は膜状に形成された静電チャックを着脱自在に接着し、こ の薄板状又は膜状の静電チャックの静電吸着力により保持板の基板側表面に対し て基板を着脱自在に保持したことを特徴とするものである。 In order to achieve the above-described object, the invention according to claim 1 of the present invention is configured such that an electrostatic chuck formed in a thin plate shape or a film shape is detachably attached to the substrate side surface of the holding plate. The substrate is detachably held on the substrate side surface of the holding plate by the electrostatic attraction force of the thin plate-like or film-like electrostatic chuck.
請求項 2記載の発明は、請求項 1記載の発明の構成に、前記静電チャックから基板 を離して、これら静電チャックと基板との間に除電用の隙間を形成する分離手段を設 けると共に、この分離手段により静電チャックの表面と基板との間に除電用の隙間を 形成しながら、該静電チャックの電極部の電圧を変動することで、この基板に残留し た電荷を中和するような電界を誘発させた構成を加えたことを特徴とする。  The invention according to claim 2 is provided with separation means for separating the substrate from the electrostatic chuck and forming a static elimination gap between the electrostatic chuck and the substrate in the configuration of the invention according to claim 1. At the same time, the separation means creates a gap for static elimination between the surface of the electrostatic chuck and the substrate, and changes the voltage of the electrode portion of the electrostatic chuck, thereby neutralizing the charge remaining on the substrate. It is characterized by the addition of a configuration that induces a summing electric field.
請求項 3記載の発明は、請求項 1記載の基板貼り合わせ機用チャック装置の基板 貼り合わせ機用チャック装置の静電チャックから基板を剥離した後の大気中又は所 定の低真空中で、該静電チャックの電極部の電圧を変動して電界を誘発させ、基板 に残留した電荷を中和したことを特徴とする。  The invention described in claim 3 is the atmosphere after the substrate is peeled off from the electrostatic chuck of the substrate bonding machine chuck device of the substrate bonding machine according to claim 1, or in a predetermined low vacuum. The voltage of the electrode part of the electrostatic chuck is varied to induce an electric field, and the charge remaining on the substrate is neutralized.
発明の効果  The invention's effect
[0007] 本発明のうち請求項 1記載の発明は、保持板の基板側表面に、薄板状又は膜状に 形成された静電チャックを着脱自在に接着することにより、保持板の基板側表面と薄 板状又は膜状の静電チャックとが一体化され、この薄板状又は膜状の静電チャック の静電吸着力によって基板を着脱自在に保持されると共に、保持板の基板側表面 力 薄板状又は膜状の静電チャックが容易に取り外し可能となる。  [0007] The invention according to claim 1 of the present invention is such that the electrostatic chuck formed in a thin plate shape or a film shape is detachably bonded to the substrate side surface of the holding plate to thereby attach the substrate side surface of the holding plate. Are integrated with the thin plate or film electrostatic chuck, and the substrate is detachably held by the electrostatic chucking force of the thin plate or film electrostatic chuck, and the substrate side surface force of the holding plate is A thin plate-like or film-like electrostatic chuck can be easily removed.
従って、保持板の基板側表面に対して何ら手を加えることなく静電チャックを交換 可能に取付けることができる。  Therefore, it is possible to replace the electrostatic chuck with no change to the substrate side surface of the holding plate.
その結果、保持板の表面全体に対して静電チャックを固定配置して ヽる従来のもの に比べ、異物の嚙み込みにより静電チャックの表面が部分的に破壊して故障したとし ても、保持板と薄板状又は膜状の静電チャックが別部品なので、設置現場において も保持板に対し静電チャックを容易に交換できるからメンテナンス性に優れ、特に本 発明の静電チャック装置を液晶ディスプレーなどの生産ラインなどに用いた場合には 、ライン全体の稼働を短時間で再開できるから、稼働率が低下せず、安定した生産 量を期待できる。 As a result, the surface of the electrostatic chuck partially breaks down due to the penetration of foreign matter compared to the conventional case where the electrostatic chuck is fixedly arranged on the entire surface of the holding plate. However, since the holding plate and the thin or film-like electrostatic chuck are separate parts, the electrostatic chuck can be easily exchanged for the holding plate even at the installation site. When is used in a production line such as a liquid crystal display, the operation of the entire line can be resumed in a short time, so the operation rate does not decrease and a stable production volume can be expected.
更に、静電チャックを除く吸引吸着手段などで基板を吸着保持する基板貼り合わせ 機の保持板に対しても、この保持板をそのまま利用して静電チャック機能を持たせる ことができて、基板吸着性能の向上が図れる。  Furthermore, the holding plate of the substrate laminating machine that holds the substrate by suction and suction means excluding the electrostatic chuck can be used as it is to provide an electrostatic chuck function. The adsorption performance can be improved.
[0008] 請求項 2の発明は、請求項 1の発明の効果に加えて、分離手段で静電チャックの表 面と基板との間に除電用の隙間を形成し、この静電チャックの電極部の電圧を変動 して電界を誘発させることにより、この電界部分では瞬間的に空気などの雰囲気ガス の一部がイオン化して電離され、それらが基板 Bに残留した電荷を中和する。  [0008] In addition to the effect of the invention of claim 1, the invention of claim 2 forms a gap for static elimination between the surface of the electrostatic chuck and the substrate by the separating means, and the electrode of the electrostatic chuck By inducing an electric field by varying the voltage of the part, a part of the atmospheric gas such as air is instantaneously ionized and ionized in this electric field part, and these neutralize the charge remaining on the substrate B.
従って、静電チャックからの剥離に伴って基板に発生した剥離帯電を静電チャック と離れた位置力 除電することができる。  Accordingly, it is possible to neutralize the separation charge generated on the substrate due to the separation from the electrostatic chuck and away from the electrostatic chuck.
その結果、静電チャックから基板を剥離する時に基板の残留電荷を除電して剥離 し易くする従来のものに比べ、剥離帯電によって静電チャックの表面と基板との剥離 距離とに亘り放電が発生せず、基板上に形成されて!ヽる例えば TFT素子などのデバ イスが破壊することを防止できる。  As a result, when the substrate is peeled from the electrostatic chuck, discharge is generated over the separation distance between the surface of the electrostatic chuck and the substrate due to the peeling charge, compared to the conventional one in which the residual charge on the substrate is removed to facilitate peeling. Without being formed on the substrate! For example, devices such as TFT elements can be prevented from being destroyed.
更に、静電チャックを除く吸引吸着手段などで基板を吸着保持する基板貼り合わせ 機の保持板であっても、除電機能を持たせることができて、剥離帯電による基板上の デバイスの破壊防止が可能となる。  Furthermore, even the holding plate of a substrate bonding machine that holds and holds substrates by suction suction means other than electrostatic chucks can be provided with a static elimination function to prevent destruction of devices on the substrate due to peeling charging. It becomes possible.
[0009] 請求項 3の発明は、請求項 1の発明の効果に加えて、静電チャックから基板を離し た大気中又は所定の低真空中で、この静電チャックの電極部の電圧を変動して電界 を誘発させることにより、この電界部分では瞬間的に空気などの雰囲気ガスの一部が イオン化して電離され、それらが基板に残留した電荷を中和する。 [0009] In addition to the effect of the invention of claim 1, the invention of claim 3 fluctuates the voltage of the electrode portion of the electrostatic chuck in the atmosphere where the substrate is separated from the electrostatic chuck or in a predetermined low vacuum. Then, by inducing an electric field, a part of atmospheric gas such as air is instantaneously ionized and ionized in this electric field portion, and these neutralize charges remaining on the substrate.
従って、静電チャックから基板を剥離した後に、その剥離に伴って基板に発生した 剥離帯電を静電チャックと離れた位置力 除電することができる。  Therefore, after the substrate is peeled from the electrostatic chuck, the peeling charge generated on the substrate along with the peeling can be neutralized by the position force away from the electrostatic chuck.
その結果、静電チャックから基板を剥離する時に基板の残留電荷を除電して剥離 し易くする従来の除電方法に比べ、剥離帯電によって静電チャックの表面と基板との 剥離距離とに亘り放電が発生せず、基板上に形成されている例えば TFT素子などの デバイスが破壊することを防止できる。 As a result, when the substrate is peeled from the electrostatic chuck, the residual charge on the substrate is removed to remove it. Compared to the conventional static elimination method that makes it easier to discharge, discharge does not occur across the peeling distance between the surface of the electrostatic chuck and the substrate due to peeling charging, and devices such as TFT elements formed on the substrate are destroyed. Can be prevented.
更に、静電チャックを除く吸引吸着手段などで基板を吸着保持する基板貼り合わせ 機の保持板であっても、除電機能を持たせることができて、剥離帯電による基板上の デバイスの破壊防止が可能となる。  Furthermore, even the holding plate of a substrate bonding machine that holds and holds substrates by suction suction means other than electrostatic chucks can be provided with a static elimination function to prevent destruction of devices on the substrate due to peeling charging. It becomes possible.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0010] 本発明の基板貼り合わせ機用チャック装置が、液晶ディスプレー (LCD)やプラズ マディスプレー(PDP)やフレキシブルディスプレイのパネルに用いられるガラス基板 を着脱自在に保持して貼り合わせる基板貼り合わせ機に配備された場合を示す。  [0010] A substrate bonding machine in which a chuck device for a substrate bonding machine of the present invention holds a glass substrate used for a liquid crystal display (LCD), a plasma display (PDP) or a flexible display panel in a detachable manner. The case where it is deployed is shown.
[0011] この基板貼り合わせ機は、図 1 (a)〜(c)に示す如ぐ例えば金属やセラミックスなど の剛体で歪み (橈み)変形しな 、厚さの平板状に形成された定盤力 なる上下一対 の保持板 1, 1' を配置し、これら上下保持板 1, 1' の平行に対向する平滑面に、二 枚の基板 A, Bを夫々着脱自在に保持させ、それらの周囲に区画形成された真空室 S内が所定の真空度に達してから、上下保持板 1, \' を相対的に ΧΥ Θ方向(図面 では水平方向)へ調整移動して、基板 A, B同士の位置合わせが行われ、その後、少 なくとも基板 A, Bのどちらか一方を上下保持板 1, \' の平滑面力 剥離して重ね合 わせた後、真空室 S内の真空破壊を行い、両基板 A, Bの内外に生じる気圧差で両 基板 A, Bの間を所定のギャップまで加圧するものである。  [0011] This substrate bonding machine is a fixed plate formed in a flat plate shape that does not deform (stagnate) with a rigid body such as metal or ceramics as shown in Figs. 1 (a) to 1 (c). A pair of upper and lower holding plates 1, 1 ′, which is a board force, is arranged, and the two substrates A and B are detachably held on the parallel opposing surfaces of these upper and lower holding plates 1, 1 ′. After the vacuum chamber S formed in the surrounding area reaches a predetermined degree of vacuum, the upper and lower holding plates 1, \ 'are relatively adjusted and moved in the ΧΥ Θ direction (horizontal direction in the drawing) to obtain substrates A and B. After aligning each other, at least one of the substrates A and B is peeled off and overlapped by the smooth surface force of the upper and lower holding plates 1, \ ', and then the vacuum break in the vacuum chamber S is performed. The pressure difference between the substrates A and B is pressurized to a predetermined gap by the pressure difference generated between the substrates A and B.
[0012] 詳しく説明すれば、図 1 (a)の実線に示す如ぐ上下保持板 1, \' が昇降手段(図 示せず)で Z方向(図面では上下方向)へ相対的に移動可能に支持され、大気圧の 雰囲気中、これら上下保持板 1, を上下方向へ離した状態で夫々の平滑面に対 し、搬送用ロボット(図示せず)で移送した基板 A, Bをセットされて夫々保持される。  More specifically, the upper and lower holding plates 1, \ 'as shown by the solid line in FIG. 1 (a) can be moved relatively in the Z direction (vertical direction in the drawing) by lifting means (not shown). In an atmosphere of atmospheric pressure, the substrates A and B transferred by a transfer robot (not shown) are set on the respective smooth surfaces with the upper and lower holding plates 1 being separated in the vertical direction. Each is retained.
[0013] その後、図 1 (a)の二点鎖線に示す如ぐ上記昇降手段の作動により上下保持板 1 , 1' を接近移動させて、これら両者間に真空室 Sが区画形成される。  [0013] Thereafter, the upper and lower holding plates 1 and 1 'are moved closer to each other by the operation of the elevating means as shown by the two-dot chain line in Fig. 1 (a), and the vacuum chamber S is defined between them.
これに続いて、この真空室 Sから吸気手段(図示せず)の作動により、空気を抜いて 所定の真空度に達したところで、水平移動手段(図示せず)の作動により、上下保持 板 1, 1' のどちらか一方を他方に対し XY 0方向へ調整移動させることで、それらに 保持された基板 A, B同士の位置合わせ (ァライメント)として粗合わせと微合わせが 順次行われる。 Subsequently, when the air is exhausted from the vacuum chamber S by the operation of the suction means (not shown) and a predetermined degree of vacuum is reached, the horizontal holding means (not shown) is operated to operate the upper and lower holding plates 1. , 1 'can be adjusted and moved in the XY 0 direction with respect to the other. Rough alignment and fine alignment are sequentially performed as alignment between the held substrates A and B.
[0014] これらの位置合わせが完了した後は、図 1 (b)に示す如ぐ上下保持板 1, 1' に保 持された基板 A, Bのどちらか一方を他方へ向け移動して、下基板 B上の環状接着 剤(シール材) Cを挟んで瞬間的に圧着させることにより、両者間を封止して重ね合わ せる。  [0014] After these alignments are completed, either one of the substrates A and B held on the upper and lower holding plates 1, 1 'as shown in Fig. 1 (b) is moved toward the other, An annular adhesive (sealant) C on the lower substrate B is sandwiched between the two by applying pressure instantaneously with the C sandwiched between them.
[0015] その後は、図 1 (c)に示す如ぐ上記昇降手段の作動により上下保持板 1, \' を互 い離隔する方向へ移動させ、これと略同時に上記吸気手段を逆作動させるか又は別 の機構で真空室 S内に空気や窒素を供給して、該真空室 S内の雰囲気を大気圧に 戻すことにより、両基板 A, Bの内外に生じる気圧差で均等に加圧され、液晶が封入 された状態で所定のギャップまで押し潰れて貼り合わせ工程を完了させている。  [0015] After that, as shown in Fig. 1 (c), the upper and lower holding plates 1, \ 'are moved away from each other by the operation of the elevating means, and the intake means is operated in reverse at substantially the same time. Alternatively, air or nitrogen is supplied into the vacuum chamber S by another mechanism, and the atmosphere in the vacuum chamber S is returned to atmospheric pressure. Then, the liquid crystal is squeezed to a predetermined gap to complete the bonding process.
[0016] そして、上述した上下保持板 1, 1' の平行に対向する基板側表面 la, la' のどち らか一方か又は両方には、本発明の基板貼り合わせ機用チャック装置として、薄板 状又は薄膜状に形成された静電チャック 2を着脱自在に接着し、この薄板状又は膜 状の静電チャック 2の静電吸着力により、上下基板 A, Bの一方又は両方を静電吸着 して、上述した基板 A, Bの位置合わせ動作が行われると共に、どちらか一方の静電 チャック 2の静電吸着機能を停止して剥離することにより、上述した基板 A, Bの貼り 合わせ動作が行われる。  [0016] Then, either one or both of the above-described substrate-side surfaces la and la 'of the upper and lower holding plates 1, 1' that are parallel to each other is used as a chuck device for a substrate bonding machine according to the present invention. The electrostatic chuck 2 formed in the shape of a thin film or thin film is detachably adhered, and one or both of the upper and lower substrates A and B are electrostatically attracted by the electrostatic adsorption force of the thin plate or film-like electrostatic chuck 2 Then, the alignment operation of the substrates A and B described above is performed, and the bonding operation of the substrates A and B described above is performed by stopping and peeling off the electrostatic chucking function of one of the electrostatic chucks 2. Is done.
[0017] 上記静電チャック 2は、例えばポリイミド、ポリエーテルエーテルケトン(PEEK)、ポリ エチレンナフタレート (PEN)などの絶縁性有機材料で平滑な薄板状又は薄膜状に形 成された誘電体 2aと、その内部にスクリーン印刷などによってパターンィ匕された導電 性ペースト又は導電箔カもなる電極部 2bとを一体的に積層している。  [0017] The electrostatic chuck 2 is a dielectric 2a formed in a smooth thin plate or thin film with an insulating organic material such as polyimide, polyetheretherketone (PEEK), or polyethylene naphthalate (PEN). In addition, an electrode portion 2b that also becomes a conductive paste or a conductive foil cover patterned by screen printing or the like is integrally laminated therein.
[0018] この電極部 2bは、周囲と絶縁して形成され、それに電圧を印加するための電源(図 示せず)と接続する。  [0018] The electrode portion 2b is formed to be insulated from the surroundings, and is connected to a power source (not shown) for applying a voltage thereto.
その具体例としては、二つ以上の電極部 2bを例えば櫛歯形に埋設した双極型の 静電チャックを使用とすることが好まし ヽ。  As a specific example, it is preferable to use a bipolar electrostatic chuck in which two or more electrode portions 2b are embedded in, for example, a comb shape.
[0019] 上述した上下保持板 1, 1' の基板側表面 la, la' のどちらか一方か又は両方と 静電チャック 2との接着手段としては、図示せぬが粘着材ゃ磁石又は機械的なワンタ ツチ式連結機構などを使用して位置ズレ不能に取り付ける。 [0019] As an adhering means between the electrostatic chuck 2 and one or both of the substrate-side surfaces la and la 'of the upper and lower holding plates 1, 1' described above, although not shown, an adhesive material is a magnet or a mechanical material. Wonta Attach it so that it cannot be misaligned using a coupling mechanism.
更に、静電チャック 2の外周端又はそれに連続して形成された取付部を、基板側表 面 la, la' よりも大きく形成して、その側面側へ折り曲げて取り付けるようにすること も可能である。  Furthermore, the outer peripheral edge of the electrostatic chuck 2 or a mounting portion formed continuously therewith can be formed larger than the substrate side surface la, la 'and can be bent and attached to the side surface. is there.
[0020] また、少なくとも下保持板!/ 及び下方の静電チャック ^ には、図 2 (a) (b)に示す 如ぐ複数の通孔 3を夫々 Z (上下)方向へ一直線上に貫通開穿し、これら通孔 3の内 部には、貼り合わせが完了した上下基板 A, Bを該静電チャック 2の表面から離す分 離手段 4として、その先端部が絶縁材料で形成されたリフトピンを、 Z (上下)方向へ 移動自在に配備するか、或いは例えば窒素ガスや空気などの気体やその他の流体 を上方へ噴射するように作動制御させることにより、下基板 Bを下方の静電チャック 2 の表面力 押し上げて、下基板 Bの裏面 B1との間に例えば 2〜3mm程度の僅かな 除電用の隙間 S1を形成する。  [0020] At least the lower holding plate! / And the lower electrostatic chuck ^, a plurality of through-holes 3 as shown in FIGS. 2 (a) and 2 (b) are formed in a straight line in the Z (vertical) direction. As the separating means 4 for separating the upper and lower substrates A and B, which have been bonded together, from the surface of the electrostatic chuck 2, the lift pins whose tip portions are formed of an insulating material are moved in the Z (vertical) direction. The lower substrate B is pushed up by lowering the surface force of the lower electrostatic chuck 2 by controlling the operation so that the gas or other fluid such as nitrogen gas or air is jetted upward. A slight clearance S1 of about 2 to 3 mm, for example, is formed between the back surface B1 of B.
[0021] この分離手段 4により下方の静電チャック 2の表面と下基板 Bの裏面 B1との間に隙 間 S 1を形成した大気中又は所定の低真空中で、この下方の静電チャック 2の内部に 埋設された二つ以上の電極部 2bの間に高電圧電源(図示せず)から高電圧を印加 し、下基板 Bの静電吸着時に印加して 、た状態カゝら電圧の極性を反転することを繰り 返すなどして、これら二つ以上の電極部 2bの電圧を変動することにより、下基板 Bに 残留した電荷を中和するような電界を誘発させて!/ヽる。  [0021] The lower electrostatic chuck is formed in the atmosphere or in a predetermined low vacuum in which a gap S1 is formed between the surface of the lower electrostatic chuck 2 and the rear surface B1 of the lower substrate B by the separating means 4. A high voltage is applied between two or more electrode parts 2b embedded in 2 from a high voltage power source (not shown), and is applied during electrostatic chucking of the lower substrate B. By changing the voltage of these two or more electrode portions 2b by repeatedly reversing the polarity of the substrate, an electric field that neutralizes the charge remaining on the lower substrate B is induced! / ヽThe
以下、本発明の一実施例を図面に基づいて説明する。  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
実施例 1  Example 1
[0022] この実施例 1は、図 1 (&)〜(じ)及び図2 (&) (b)に示す如ぐ上下保持板 1, 1' の 基板側表面 la, la' に夫々薄板状又は薄膜状の静電チャック 2を夫々着脱自在に 接着し、これら薄板状又は膜状の静電チャック 2の静電吸着力により、上下基板 A, B の両方を静電吸着して、上述した位置合わせ動作と貼り合わせ動作が真空中で行わ れ、この貼り合わせが完了した上下基板 A, Bを、下方の静電チャック 2の表面力 押 し上げて、下基板 Bの裏面 B1との間に例えば 2〜3mm程度の僅かな除電用の隙間 S 1を形成して除電する場合を示すものである。  [0022] This Example 1 is a thin plate on the substrate-side surfaces la and la 'of the upper and lower holding plates 1, 1' as shown in Figs. 1 (&) to (ji) and Fig. 2 (&) (b). Alternatively, the thin-film electrostatic chuck 2 is detachably bonded to each other, and both the upper and lower substrates A and B are electrostatically attracted by the electrostatic adsorption force of the thin plate-like or film-like electrostatic chuck 2, as described above. The alignment operation and the bonding operation are performed in a vacuum, and the upper and lower substrates A and B, which have been bonded, are pushed up by the surface force of the lower electrostatic chuck 2 and between the lower surface B1 of the lower substrate B. Fig. 9 shows a case where the static electricity is removed by forming a slight static elimination gap S1 of about 2 to 3 mm, for example.
[0023] 上述した上下保持板 1, の平行に対向する平滑面には、剛体力 なる台座 (ベ ース) lb, 1W を突設し、その先端表面の平滑なベース面を基板側表面 la, la' と して、上記静電チャック 2を接着手段により取り付けることが好ましい。 [0023] On the smooth surfaces of the upper and lower holding plates 1, which face each other in parallel, a pedestal (base) having a rigid body force is provided. It is preferable that the electrostatic chuck 2 is attached by an adhesive means, with lb, 1W protruding and having a smooth base surface at the tip surface as the substrate side surface la, la ′.
[0024] 少なくとも下保持板 1' の台座 lb' には、前記分離手段 4が配備される複数の通 孔 3を夫々開穿する。 [0024] At least a base lb 'of the lower holding plate 1' is opened with a plurality of through holes 3 in which the separating means 4 is provided.
更に必要に応じて上下保持板 1, の台座 lb, 11 には、大気中において吸着 保持するための吸引吸着手段 5として、複数の吸引孔 5aが夫々適宜間隔毎に開設 し、これら吸引孔 5aを例えば真空ポンプなどの吸引源(図示せず)に配管連絡させる  Further, as necessary, a plurality of suction holes 5a are provided at appropriate intervals on the bases lb, 11 of the upper and lower holding plates 1, as suction suction means 5 for sucking and holding in the atmosphere. Is connected to a suction source (not shown) such as a vacuum pump.
[0025] このように基板側表面 la, la' に複数の吸引孔 5aが夫々適宜間隔毎に開設され る場合には、上記静電チャック 2にも各吸引孔 5aと対向して貫通孔 2cを開穿して夫 々連通させる。 [0025] When the plurality of suction holes 5a are formed in the substrate-side surfaces la and la 'at appropriate intervals as described above, the electrostatic chuck 2 is also opposed to each suction hole 5a and the through-holes 2c. Open the doors to communicate with each other.
[0026] また図示例では、上保持板 1の台座 lbに対して薄板状又は薄膜状の静電チャック 2を、ガイド手段(図示せず)などによって上下方向へ往復動自在に支持し、この上方 の静電チャック 2を該台座 lbの平滑な基板側表面 laへ向け引き寄せて着脱自在に 接着するための付着手段 6と、この基板側表面 laから該静電チャック 2を引き離すた めの隔離手段 7とを備えている。  In the illustrated example, a thin plate or thin film electrostatic chuck 2 is supported on a base lb of the upper holding plate 1 by a guide means (not shown) so as to be reciprocally movable in the vertical direction. The upper electrostatic chuck 2 is drawn toward the smooth substrate side surface la of the pedestal lb to attach it detachably, and the isolation means for separating the electrostatic chuck 2 from the substrate side surface la. Means 7 are provided.
[0027] 上記付着手段 6は、上保持板 1の基板側表面 laと、それに対向する上方の静電チ ャック 2の表面とに亘つて、例えば永久磁石や電磁石などの磁石 6aと、その磁気によ り引き付けられる磁石や例えばスパッタなどで膜状に形成された金属などの磁性体 6 bとを夫々固定配置している。  [0027] The adhering means 6 includes, for example, a magnet 6a such as a permanent magnet or an electromagnet, and a magnetic field between the surface la on the substrate side of the upper holding plate 1 and the surface of the upper electrostatic chuck 2 facing the upper surface la. A magnet attracted by the magnet and a magnetic body 6b such as a metal formed into a film by sputtering or the like are fixedly arranged.
[0028] 上記隔離手段 7は、上保持板 1の基板側表面 la配備された前記吸引吸着手段 5の 吸引孔 5aなどから上方の静電チャック 2の表面に向け、例えば窒素ガスや空気など の気体やその他の流体を注入して静電チャック 2を押圧する力、或いはエアシリンダ などの上下往復動する駆動体で静電チャック 2を押圧するか、或 、は上記付着手段 4として対向状に設けられた磁石 6a, 6bのどちらか一方の磁極を変換し、これら対向 する磁石 6a, 6bの磁極を同じにして反発させることにより、平滑な基板側表面 laから 上方の静電チャック 2が平行に離れるようにして 、る。  [0028] The separating means 7 is directed toward the surface of the upper electrostatic chuck 2 from the suction hole 5a of the suction suction means 5 provided on the substrate side surface la of the upper holding plate 1, for example, nitrogen gas or air. A force that injects gas or other fluid and presses the electrostatic chuck 2, or the electrostatic chuck 2 is pressed by a driving body that reciprocates up and down, such as an air cylinder, By converting one of the magnetic poles of the magnets 6a and 6b provided and repelling them by making the magnetic poles of the opposing magnets 6a and 6b the same, the upper electrostatic chuck 2 is parallel from the smooth substrate side surface la. To leave.
[0029] 次に、斯カる基板貼り合わせ機用チャック装置の作動について説明する。 先ず、図 1 (a)の実線に示す大気圧状態で、前記吸引吸着手段 5や付着手段 6の 作動により、上保持板 1の基板側表面 laへ向けて薄板状又は薄膜状の静電チャック 2を引き寄せ、平滑な基板側表面 laに沿わせ平滑にして接着し、この状態で搬送用 ロボットにより移送された上下基板 A, Bを、上保持面 laに付着された上方の静電チ ャック 2と、下保持板 の基板側表面 1 上に取り付けられた下方の静電チャック 2 により夫々静電吸着して保持する。 Next, the operation of such a chuck device for a substrate bonding machine will be described. First, in the atmospheric pressure state shown by the solid line in FIG. 1 (a), the electrostatic chuck in the form of a thin plate or thin film toward the substrate side surface la of the upper holding plate 1 by the operation of the suction adsorption means 5 or the adhesion means 6 2 and pulling the upper and lower substrates A and B transferred by the transfer robot in this state along the smooth substrate side surface la, and the upper electrostatic chuck attached to the upper holding surface la. 2 and the lower electrostatic chuck 2 mounted on the substrate-side surface 1 of the lower holding plate, respectively, are electrostatically attracted and held.
[0030] この搬送用ロボットにより上下基板 A, Bを移送して、上下の静電チャック 2へ夫々移 送してセットする際に、ガラスのカレット (破片)などが入り込む可能性がある。  [0030] When the upper and lower substrates A and B are transferred by the transfer robot and transferred to the upper and lower electrostatic chucks 2 and set, there is a possibility that glass cullet (fragment) or the like enters.
この場合には、上下基板 A, Bとの静電吸着に伴って該カレットを各静電チャック 2, との間に嚙み込むことにより、これら静電チャック 2の誘電体 2aなどの表面が部分的 に破壊して故障することがある。  In this case, the surface of the electrostatic chuck 2 such as the dielectric 2a is formed by sandwiching the cullet between the electrostatic chucks 2 and 2 along with the electrostatic adsorption between the upper and lower substrates A and B. May break down and break down.
[0031] このような場合でも上下保持板 1, 1' の基板側表面 la, W に対して薄板状又は 薄膜状の静電チャック 2が夫々着脱自在に配備されるため、これら静電チャック 2を 簡単に交換できる。  [0031] Even in such a case, since the electrostatic chuck 2 having a thin plate shape or a thin film shape is detachably provided on the substrate side surfaces la, W of the upper and lower holding plates 1, 1 ', these electrostatic chucks 2 Can be easily replaced.
[0032] その後、図 1 (a)の二点鎖線に示す如ぐ前記昇降手段の作動により上下保持板 1 , 1' を接近移動させて真空室 Sを形成し、この真空室 S内が所定の真空度に達して から、そのまま上下保持板 1, \' を相対的に ΧΥ Θ方向へ調整移動して、上下基板 A, Bの位置合わせ動作が行われる。  Thereafter, the upper and lower holding plates 1, 1 ′ are moved closer to each other by the operation of the elevating means as shown by a two-dot chain line in FIG. 1 (a) to form a vacuum chamber S, and the inside of the vacuum chamber S is predetermined. After reaching the vacuum degree, the upper and lower holding plates 1, \ 'are adjusted and moved relative to each other in the ΘΘ direction, and the upper and lower substrates A and B are aligned.
[0033] この位置合わせ動作の完了後は、図 1 (b)に示す如ぐ前記隔離手段 7の作動によ り、上保持板 1の基板側表面 laから上方の静電チャック 2を、上基板 Aが静電吸着さ れたまま引き離して、この上基板 Aを下基板 Bへ向け移動させる。  [0033] After the alignment operation is completed, the electrostatic chuck 2 above the substrate-side surface la of the upper holding plate 1 is moved upward by the operation of the separating means 7 as shown in FIG. The substrate A is pulled away while being electrostatically attracted, and the upper substrate A is moved toward the lower substrate B.
それにより、上下基板 A, Bが環状接着剤 Cを挟んで瞬間的に圧着され、両者間が 封止して重ね合わされる。  As a result, the upper and lower substrates A and B are instantaneously pressed with the annular adhesive C interposed therebetween, and the two are sealed and overlapped.
[0034] この重ね合わせ工程において、上下基板 A, Bの間に気体や流体が入り込むことを 完全に防止できると共に、剛性が極端に低い上基板 Aに対して、その上に存在する 薄板状又は薄膜状の静電チャック 2がクッション材となるため、環状接着剤 Cに対す る加圧に僅かな不均一が生じたとしても、上下基板 A, Bの間に形成された環状接着 剤 Cゃスぺーサー(図示せず)などに影響を及ぼし難いという利点がある。 [0035] また、この上基板 Aの移動が完了した直後に、上方の静電チャック 2の電源が切断 されて、その静電吸着機能が停止される。 [0034] In this superposition process, gas and fluid can be completely prevented from entering between the upper and lower substrates A and B, and the upper substrate A having extremely low rigidity is formed into a thin plate or Since the thin-film electrostatic chuck 2 serves as a cushioning material, even if slight pressure non-uniformity is applied to the annular adhesive C, the annular adhesive C formed between the upper and lower substrates A and B There is an advantage that it is difficult to affect a spacer (not shown). [0035] Immediately after the movement of the upper substrate A is completed, the power supply of the upper electrostatic chuck 2 is turned off, and the electrostatic adsorption function is stopped.
その後、真空室 S内が大気圧に戻されて、両基板 A, Bの内外に生じる気圧差によ り均等に加圧され、両基板 A, Bの内外に生じる気圧差で所定のギャップまで押し潰 れて貼り合わせ工程が完了する。  After that, the inside of the vacuum chamber S is returned to the atmospheric pressure, and the pressure is evenly applied by the pressure difference generated inside and outside of both the substrates A and B. The pressure difference generated inside and outside the both substrates A and B reaches the predetermined gap. The bonding process is completed by crushing.
[0036] それに続いて、図 1 (c)に示す如ぐ環状接着剤 Cを介して下基板 Bと貼り合わされ た上基板 Aから、前記吸引吸着手段 5や付着手段 6の作動により、上方の静電チヤッ ク 2を上保持板 1の基板側表面 laへ引き寄せて、これら両者の剥離を開始する。 Subsequently, from the upper substrate A bonded to the lower substrate B via the annular adhesive C as shown in FIG. 1 (c), the suction adsorbing means 5 and the adhering means 6 are operated to move upward. The electrostatic chuck 2 is pulled toward the substrate-side surface la of the upper holding plate 1 to start peeling of both.
[0037] この頃には、真空室 S内の真空度が数十 Pa〜数千 Pa程度のパッシェン放電領域 を通過することで、上方の静電チャック 2の残留吸着力が極端に低下している。 しかし、環状接着剤 Cの接着力で保持された上基板 Aと上方の静電チャック 2とは、 それらの面全体が接触して ヽるために、剥離し難!ヽ場合が考えられる。 [0037] At this time, the residual suction force of the upper electrostatic chuck 2 is extremely reduced by passing through the Paschen discharge region where the degree of vacuum in the vacuum chamber S is about several tens of Pa to several thousand Pa. . However, the upper substrate A held by the adhesive force of the annular adhesive C and the upper electrostatic chuck 2 may come in contact with each other, and may be difficult to peel off.
[0038] そこで、上述したように上基板 Aの表面から上方の静電チャック 2の面全体を同時 に引き離すのではなぐ貼り合わされた上基板 Aの外周端部と対向する箇所力 部 分的に変形させて、上基板 Aの外周端部との間に剥離用の隙間を部分的に形成す れば、これら静電チャック 2の静電吸着部 2aと上基板 Aの表面に該剥離用の隙間が 一気に広がって、残留吸着力が強制的に減衰されて消滅するため、上方の静電チヤ ック 2の静電吸着面全体力 上基板 Aの表面からスムーズに剥離する。 [0038] Therefore, as described above, it is not the case that the entire surface of the upper electrostatic chuck 2 is separated from the surface of the upper substrate A at the same time. If it is deformed and a gap for peeling is partially formed between the outer peripheral edge of the upper substrate A, the peeling force is applied to the electrostatic chucking portion 2a of the electrostatic chuck 2 and the surface of the upper substrate A. The gap widens at once, and the residual adsorption force is forcibly attenuated and disappears. Therefore, the entire force of the electrostatic adsorption surface of the upper electrostatic chuck 2 is smoothly peeled off from the surface of the substrate A.
[0039] 更に、上基板 Aの表面力 剥離した上方の静電チャック 2は、上ベース面 laに付着 し、それ以降は、前記昇降手段の作動により上下保持板 1, 1' を互い離隔する方向 へ移動させて初期状態に戻る。 [0039] Further, the upper electrostatic chuck 2 from which the surface force of the upper substrate A is peeled adheres to the upper base surface la, and thereafter, the upper and lower holding plates 1, 1 'are separated from each other by the operation of the lifting means. Move in the direction to return to the initial state.
[0040] この貼り合わせ工程が完了した上下基板 A, Bは、下方の静電チャック 2から脱離し て搬出されるが、この離脱に伴って、上下基板 A, B側には静電気 (電荷)が残ってし まつ。 [0040] The upper and lower substrates A and B that have completed this bonding process are detached from the lower electrostatic chuck 2 and carried out, but along with this separation, the upper and lower substrates A and B are charged with static electricity (charge). Will remain.
[0041] 詳しく説明すれば、下方の静電チャック 2にガラス製の下基板 Bが付いている状態 から剥離させた瞬間に、下基板 Bの裏面 B1には、該静電チャック 2の表面材料と下 基板 Bの材質との帯電列の差に応じた電荷が下基板 Bの裏面 B1に溜まる剥離帯電 力 S起こる。 この時、上記下方の静電チャック 2の表面と下基板 Bの裏面 Blとの剥離距離が短 い場合には、帯電電圧が低いために下方の静電チャック 2を支持する金属製の台座 lbなどの導電物との間で放電が起こり難いが、この剥離距離が大きくなると非常に高 電圧となり、金属製の台座 lbなどの導電物との間で放電が起こる。 More specifically, at the moment when the lower electrostatic chuck 2 is peeled off from the state where the lower substrate B made of glass is attached, the surface material of the electrostatic chuck 2 is applied to the rear surface B1 of the lower substrate B. The charge corresponding to the difference in the charge train between the material of the lower substrate B and the lower substrate B is caused by the peeling charge S that accumulates on the back surface B1 of the lower substrate B. At this time, if the peeling distance between the surface of the lower electrostatic chuck 2 and the back surface Bl of the lower substrate B is short, the metal base lb that supports the lower electrostatic chuck 2 because the charging voltage is low lb It is difficult for electric discharge to occur between the conductive materials such as, but if this separation distance increases, the voltage becomes very high, and electric discharge occurs between the conductive materials such as the metal base lb.
[0042] この静電気 (電荷)は、下基板 Bのサイズや処理条件によっても異なる力 その電圧 は対地電圧で 20KV以上になることもあり、この蓄積電荷が放電される際に、基板 A , B上に形成されている例えば TFT素子などのデバイスを破壊することもあるし、破 壊まで至らなくても、デバイスの特性が部分的に変化してしまうこともあった。  [0042] This static electricity (charge) varies depending on the size and processing conditions of the lower substrate B. The voltage may be 20 KV or more as a ground voltage, and when this accumulated charge is discharged, the substrates A and B Devices such as TFT elements formed above may be destroyed, and the device characteristics may change partially even without destruction.
そこで以下のように除電を行う。  Therefore, static elimination is performed as follows.
[0043] 具体的には、貼り合わせ工程が完了した上下基板 A, Bを、図 2 (a) (b)に示す如く 、下保持板 の基板側表面 1 及び下方の静電チャック 2に開穿された複数の通 孔 3から前記分離手段 4として、リフトピンを上昇させるか、或いは例えば窒素ガスや 空気などの気体やその他の流体を上方へ噴射させることにより、貼り合わせが完了し た上下基板 A, Bを、下方の静電チャック 2の表面力も押し上げて、下基板 Bの裏面 B 1との間に例えば 2〜3mm程度の僅かな除電用の隙間 S1が形成される。  Specifically, the upper and lower substrates A and B that have completed the bonding process are opened on the substrate-side surface 1 of the lower holding plate and the lower electrostatic chuck 2 as shown in FIGS. 2 (a) and 2 (b). The upper and lower substrates that have been bonded together by raising the lift pin from the plurality of perforated holes 3 as the separating means 4 or by jetting a gas or other fluid such as nitrogen gas or air upward, for example. The surface force of the lower electrostatic chuck 2 is also pushed up by A and B, and a slight clearance S1 of about 2 to 3 mm, for example, is formed between the lower substrate B and the back surface B1.
[0044] このような状況で貼り合わせが完了した上下基板 A, Bの周囲は、大気中又はそれ に近い低真空となっており、この雰囲気で、下方の静電チャック ^ の内部に埋設さ れた二つ以上の電極部 2bに高電圧を印加する。  [0044] The surroundings of the upper and lower substrates A and B, which have been bonded together in such a situation, are in the atmosphere or a low vacuum close thereto, and are embedded in the lower electrostatic chuck ^ in this atmosphere. A high voltage is applied to the two or more electrode portions 2b.
即ち、正の電荷と負の電荷を隣り合わせて対で印加して、電極部 2bの電圧を変動 させることにより、その近傍に電界 (詳しくは交番電界)が誘発される。  That is, by applying a positive charge and a negative charge side by side as a pair and changing the voltage of the electrode portion 2b, an electric field (specifically an alternating electric field) is induced in the vicinity thereof.
[0045] この誘発した交番電界によって、その部分では瞬間的に空気などの雰囲気ガスの 一部がイオンィ匕して電離、即ち中性分子が正と負の電荷に分離されるので、それら が下基板 Bの裏面 B1に残留した電荷を中和させるように作用する。  [0045] By this induced alternating electric field, a part of the atmospheric gas such as air is instantaneously ionized and ionized in that portion, that is, neutral molecules are separated into positive and negative charges. It acts to neutralize the charge remaining on the back surface B1 of the substrate B.
[0046] 実験によれば、上記分離手段 4のリフトピンで下方の双極型静電チャック 2の表面と 下基板 Bの裏面 B1との隙間を約 2mmとし、印加電圧を ± 2500Vとして、 1回の極性 入れ替えを行った場合は、下基板 Bの耐電圧は約 1/3まで減少し、更に 1回行う毎に 約 1/3の電圧まで減少した。  [0046] According to the experiment, the gap between the surface of the lower bipolar electrostatic chuck 2 and the lower surface B1 of the lower substrate B with the lift pin of the separating means 4 is about 2 mm, the applied voltage is ± 2500 V, and When the polarity was changed, the withstand voltage of the lower board B decreased to about 1/3, and it decreased to about 1/3 each time it was performed again.
これを複数回繰り返すことによって、帯電電圧を短時間に極端に下げることができ た。 By repeating this multiple times, the charging voltage can be drastically reduced in a short time. It was.
[0047] 尚、前示実施例では、真空中で二枚の基板 A, Bを貼り合わせる基板貼り合わせ機 を説明したが、これに限定されず、大気中で基板 A, Bを貼り合わせる基板貼り合わ せ機でも良ぐこの場合でも、上述した真空貼り合わせ機と同じ作用効果が得られる 更に、図示例では、上保持板 1の基板側表面 laに対して薄板状又は薄膜状の静 電チャック 2を上下方向へ往復動自在に支持し、この上方の静電チャック 2を上基板 Aが静電吸着されたまま引き離すことにより、上基板 Aを下基板 Bへ向け移動させて、 環状接着剤 Cで両基板 A, Bを貼り合わせたが、これに限定されず、上方の静電チヤ ック 2を上下移動しない他の貼り合わせ方法により両基板 A, Bを重ね合わせても良 い。  In the previous embodiment, the substrate bonding machine for bonding two substrates A and B in a vacuum has been described. However, the present invention is not limited to this, and the substrate for bonding substrates A and B in the atmosphere. Even in this case, the same effect as that of the above-described vacuum bonding machine can be obtained. Further, in the illustrated example, a thin plate-like or thin-film-like electrostatic is applied to the substrate side surface la of the upper holding plate 1. The chuck 2 is supported so that it can reciprocate in the vertical direction, and the upper substrate A is moved toward the lower substrate B by separating the upper electrostatic chuck 2 while the upper substrate A is electrostatically attracted. Although both substrates A and B are bonded together with agent C, the present invention is not limited to this. Both substrates A and B may be overlapped by other bonding methods that do not move the upper electrostatic chuck 2 up and down. .
図面の簡単な説明  Brief Description of Drawings
[0048] [図 1]本発明の基板貼り合わせ機用チャック装置の一実施例を示す縦断正面図であ り、(a)〜(c)に基板の貼り合わせ方法を工程順に示している。  FIG. 1 is a longitudinal front view showing an embodiment of a chuck device for a substrate bonding machine of the present invention, and (a) to (c) show a method for bonding substrates together in the order of steps.
[図 2]除電時を示す縦断正面図であり、 (a) (b)に作動工程順に示している。  [Fig. 2] A longitudinal front view showing the state of static elimination, and (a) and (b) are shown in order of operation steps.
符号の説明  Explanation of symbols
A 基板 (上基板) B 基板 (下基板)  A board (upper board) B board (lower board)
B1 裏面 C 環状接着剤  B1 Back C C Adhesive
S 真空室 S1 除電用の隙間  S Vacuum chamber S1 Static elimination gap
1 上保持板 la 基板側表面  1 Upper holding plate la Board side surface
lb 台座 1' 下保持板  lb pedestal 1 'lower holding plate
la' 基板側表面 lb' 台座  la 'PCB side surface lb' Pedestal
2 静電チャック 2a 誘電体  2 Electrostatic chuck 2a Dielectric
2b 電極部 2c 貫通孔  2b Electrode part 2c Through hole
3 通孔 4 分離手段  3 Through holes 4 Separation means
5 吸引吸着手段 5a 吸引孔  5 Suction suction means 5a Suction hole
6 付着手段 6a 石  6 Adhering means 6a Stone
6b 磁性体 (磁石) 7 隔離手段  6b Magnetic material (magnet) 7 Isolation means

Claims

請求の範囲 The scope of the claims
[1] 保持板の基板側に基板を静電吸着して着脱自在に保持する基板貼り合わせ機用チ ャック装置において、  [1] In a chuck device for a substrate bonding machine that holds a substrate detachably by electrostatically adsorbing the substrate to the substrate side of the holding plate,
前記保持板の基板側表面に、薄板状又は膜状に形成された静電チャックを着脱自 在に接着し、この薄板状又は膜状の静電チャックの静電吸着力により保持板の基板 側表面に対して基板を着脱自在に保持したことを特徴とする基板貼り合わせ機用チ ャック装置。  An electrostatic chuck formed in a thin plate shape or a film shape is bonded to the surface of the holding plate on the substrate side, and the substrate side of the holding plate is attached by the electrostatic adsorption force of the thin plate shape or the film shape electrostatic chuck. A chuck device for a substrate bonding machine, wherein the substrate is detachably held on the surface.
[2] 前記静電チャックから基板を離して、これら静電チャックと基板との間に除電用の隙 間を形成する分離手段を設けると共に、この分離手段により静電チャックの表面と基 板との間に除電用の隙間を形成しながら、該静電チャックの電極部の電圧を変動す ることで、この基板に残留した電荷を中和するような電界を誘発させた請求項 1記載 の基板貼り合わせ機用チャック装置。  [2] Separation means for separating the substrate from the electrostatic chuck and forming a static elimination gap between the electrostatic chuck and the substrate is provided, and the surface of the electrostatic chuck and the substrate are separated by the separation means. The electric field that neutralizes the charge remaining on the substrate is induced by changing the voltage of the electrode portion of the electrostatic chuck while forming a gap for static elimination between the electrodes. Chuck device for substrate bonding machine.
[3] 請求項 1記載の基板貼り合わせ機用チャック装置の静電チャックから基板を剥離した 後の大気中又は所定の低真空中で、該静電チャックの電極部の電圧を変動して電 界を誘発させ、基板に残留した電荷を中和したことを特徴とする基板除電方法。  [3] In the atmosphere after peeling the substrate from the electrostatic chuck of the chuck device for the substrate bonding machine according to claim 1, the voltage of the electrode portion of the electrostatic chuck is changed in the air or in a predetermined low vacuum. A method for neutralizing a substrate, characterized by inducing a field and neutralizing a charge remaining on the substrate.
PCT/JP2006/319541 2006-09-29 2006-09-29 Chuck device for substrate bonding machine and method of neutralizing charges on substrate WO2008041294A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150274420A1 (en) * 2012-10-22 2015-10-01 Grenzebach Maschinenbau Gmbh Apparatus and method for quickly transferring plates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000025948A (en) * 1998-07-10 2000-01-25 Yaskawa Electric Corp Electrostatic floating conveyor
WO2005041156A1 (en) * 2003-10-23 2005-05-06 Shin-Etsu Engineering Co., Ltd. Method for sealing substrates while stacking

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000025948A (en) * 1998-07-10 2000-01-25 Yaskawa Electric Corp Electrostatic floating conveyor
WO2005041156A1 (en) * 2003-10-23 2005-05-06 Shin-Etsu Engineering Co., Ltd. Method for sealing substrates while stacking

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150274420A1 (en) * 2012-10-22 2015-10-01 Grenzebach Maschinenbau Gmbh Apparatus and method for quickly transferring plates

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