WO2008038901A1 - Generateur de plasma - Google Patents

Generateur de plasma Download PDF

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Publication number
WO2008038901A1
WO2008038901A1 PCT/KR2007/003843 KR2007003843W WO2008038901A1 WO 2008038901 A1 WO2008038901 A1 WO 2008038901A1 KR 2007003843 W KR2007003843 W KR 2007003843W WO 2008038901 A1 WO2008038901 A1 WO 2008038901A1
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WO
WIPO (PCT)
Prior art keywords
plasma
treatment
plasma generation
applying
storage unit
Prior art date
Application number
PCT/KR2007/003843
Other languages
English (en)
Inventor
Hung Sik Min
Young Geun An
Sung Jin Yang
Original Assignee
Cmtech Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cmtech Co., Ltd filed Critical Cmtech Co., Ltd
Publication of WO2008038901A1 publication Critical patent/WO2008038901A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Definitions

  • the present invention relates to a plasma generator for surface treatment, and more particularly to a surface treatment apparatus that is used to treat a substrate by generating plasma under atmospheric pressure and leading the generated plasma out of a plasma generation space (or discharge space) to bring the plasma into contact with the surface of the substrate.
  • Methods for treating the surface of a substrate for example for removal of contaminants such as an organic material from the surface of a substrate, resist removal, bonding of an organic film, surface deformation, improvement of film formation, reduction of a metal oxide, cleaning of a glass substrate for LCDs, oxide layer etching, silicon or metal etching, or the like, are mainly classified into methods using chemicals and methods using plasma.
  • the methods using chemicals have a problem in that chemicals negatively affect the environment.
  • An example of the surface treatment method using plasma is a method using low- temperature, low-pressure plasma.
  • the surface treatment method using low- temperature, low-pressure plasma generates plasma in a low-temperature, low-pressure vacuum container and brings the plasma into contact with a substrate to treat the surface of the substrate.
  • Japanese Patent Application Publication Nos. 2-15171, 3-241739, or 1-306569 have disclosed a surface treatment method and apparatus to treat the surface of a substrate placed in a plasma generation space.
  • the method includes the steps of disposing a pair of electrodes insulated by at least one insulator in parallel, supplying treatment gases to a plasma generation space formed between the electrodes, applying an AC voltage between the electrodes to generate plasma from the treatment gases, and treating the surface of a substrate placed in the plasma generation space using the generated plasma.
  • this surface treatment method and apparatus can treat very thin flat-type substrates only since a substrate to be treated must be located in the plasma generation space between the two electrodes. Thus, the fields of application of the surface treatment method and apparatus are very limited.
  • the surface treatment method and apparatus also has a problem in that samples may be damaged by high voltage applied to the electrodes when they are metal or semiconductor samples with conductivity rather than dielectric samples.
  • United States Patent No. 5,185,132 has disclosed a surface treatment method characterized in that plasma is generated by introducing a mixture of a rare (or inert) gas and a reactive gas into a reaction container having insulator-coated electrodes obtained by placing a solid insulator on the surface of each of at least two flat-type electrodes disposed in parallel and an active species is then delivered downstream of the plasma to treat the surface of the sample.
  • a surface treatment apparatus used in this method includes two flat electrodes 101a and 101b, a treatment gas inlet 103, and an outlet 104.
  • the flat electrodes 101a and 101b disposed in parallel are insulated by insulators 106a and 106b.
  • the treatment gas inlet 103 is formed at one end of a plasma generation space 102 formed between the two electrodes 101a and 101b.
  • the outlet 104 is formed at the other end of the plasma generation space.
  • Treatment gases are introduced into the plasma generation space 102 through the inlet 103 formed at one end of the plasma generation space 102.
  • the introduced treatment gases are converted into plasma by an AC voltage applied to the electrodes 101a and 101b.
  • the generated plasma and treatment gases that have not been converted into plasma are led out of the plasma generation space 102 through the outlet 104 formed at the other end of the plasma generation space 102 so that the plasma and treatment gases are brought into contact with the surface of a substrate 105 to treat the surface of the substrate 105.
  • the surface treatment apparatus has a problem in that a width (W) to be treated is limited since the outlet 104, through which the generated plasma and treatment gases that have not been converted into plasma are discharged, is formed at one end of the plasma generation space. Increasing the treatment width W causes a problem of a sharp increase in the applied AC voltage.
  • United States Patent No. 6,424,091 has disclosed a surface treatment apparatus characterized by including a) at least one pair of electrodes, each having an insulator at an outer surface thereof, b) gas supply means for supplying a treatment gas to a plasma generation space defined between the electrodes, and c) an AC power supply for applying an AC voltage between the electrodes to generate plasma of the treatment gas in the plasma generation space, wherein at least one of the pair of electrodes has a curved surface protruding into the plasma generation space.
  • FIG. 2 illustrates the surface treatment apparatus in which plasma 203 is generated between a pair of cylindrical electrodes 201a and 201b insulated by insulators 202a and 202b and the generated plasma is brought into contact with the surface of a substrate 204 provided outside the surface treatment apparatus to treat the surface of the substrate 204.
  • the surface treatment apparatus having this electrode structure has an advantage in that the cylindrical electrodes are used to increase the treatment width, it has a problem in that the plasma generation space per unit area of the electrodes is significantly reduced compared to when flat electrodes are used, thereby reducing the efficiency of conversion into plasma.
  • the effective area of the electrodes which can convert the treatment gas to plasma is significantly reduced to cause a decrease in the efficiency of conversion into plasma, thereby reducing the efficiency of treatment of the substrate. Due to the decrease in the efficiency of conversion into plasma, the surface treatment apparatus needs to supply a greater amount of power than when flat electrodes are used, thereby causing a waste of power.
  • Publication No. 10-0476136 has suggested a surface treatment apparatus including a lower electrode plate structure having outlets. Reference will now be made to this apparatus with reference to FIG. 3.
  • the surface treatment apparatus includes an upper electrode 301a, a flat lower electrode 301b, a plasma generation space 302 formed between the two electrodes 301a and 301b, insulators 303a and 303b for insulating the two electrodes 301a and 301b, radiators 304a and 304b for reducing the surface temperature of the electrodes 301a and 301b, inlets 305a and 305b for introducing treatment gases into a plasma generation portion 300, and outlets 306a, 306b, 306c, 306d, and 306e which are formed in the lower electrode 301b and through which the plasma generated in the plasma generation space 302 and treatment gases that have not been converted into plasma are led out of the plasma generation space 302.
  • a substrate 308 to be treated is located under the lower electrode 301a.
  • An AC power supply 307 is connected to the upper electrode 301a and the lower electrode 301b is grounded.
  • the surface treatment apparatus having this electrode structure can be designed with a larger effective area of the electrodes which can convert the treatment gas to plasma.
  • the surface treatment apparatus can also be designed with a larger treatment area since it uses the electrode plate with outlets.
  • this surface treatment apparatus has a problem in that there may be a large difference between the flow rate of treatment gases at the outlets 306a and 306e located at the edges of the electrode plate and the flow rate of treatment gases at the outlet 306c located at the center of the electrode plate, thereby causing a variation in the chemical strength of treatment gases. Disclosure of Invention Technical Problem
  • the conventional technology has the following problems. In order to allow uniform discharging of treatment gases through the outlets, it is necessary to increase the number of holes of the outlets or the flow rate of discharge gases. Thus, manufacturing an apparatus with a reliable structure requires high costs and it is also necessary to cope with great consumption of treatment gases when the apparatus is used.
  • the present invention provides a novel plasma generator which can overcome not only the problem of the small effective treatment width when the conventional flat- type electrode structure is employed but also the problem of the reduction in the plasma generation space when the cylindrical electrodes are used and also can overcome the problem of the uneven discharging of treatment gases through the outlets of the lower electrode plate.
  • the present invention provides a surface treatment apparatus which not only can allow successive surface treatment of a substrate under atmospheric pressure but also can increase the treatment area of the substrate and also provides a plasma generator with a simple structure which is easy to manufacture and can also significantly reduce consumption of treatment gases.
  • the present invention provides a surface treatment apparatus using atmospheric pressure plasma with a variety of advantages.
  • the surface treatment apparatus can overcome the problems of the conventional flat or cylindrical electrodes, which include a reduction of the plasma generation space (i.e., the treatment area or the discharge area).
  • the surface treatment apparatus can control the discharge flow rate of plasma treatment gases through an outlet at a lower electrode at a uniform level, thereby improving the uniformity of the treated surface and can allow successive surface treatment under atmospheric pressure.
  • the manufacturing method is also simple to increase the reliability of the apparatus.
  • the amount of consumed treatment gases can also be reduced appropriately according to environments in which they are used. Brief Description of the Drawings
  • FIG. 1 is a cross-sectional view illustrating a first example of a plasma generator for surface treatment to which a conventional technology is applied;
  • FIG. 2 is a cross-sectional view illustrating a second example of a plasma generator for surface treatment to which a conventional technology is applied;
  • FIG. 3 is a cross-sectional view illustrating a third example of a plasma generator for surface treatment to which a conventional technology is applied;
  • FIG. 4 is a partially-cut perspective view illustrating a first example of a plasma generator for surface treatment to which a technology of the present invention is applied;
  • FIG. 5 is a cross-sectional view illustrating the plasma generator for surface treatment shown in FIG. 4; [30] FIG.
  • FIG. 6 is a partially-cut perspective view illustrating a second example of a plasma generator for surface treatment to which a technology of the present invention is applied;
  • FIG. 7 is a cross-sectional view illustrating the plasma generator for surface treatment shown in FIG. 6;
  • FIG. 8 is a cross-sectional view illustrating a modified example of a plasma generator for surface treatment to which a technology of the present invention is applied;
  • FIG. 9 is a cross-sectional view illustrating a modified example of the use of a plasma generator for surface treatment to which a technology of the present invention is applied.
  • a plasma generator 400 for surface treatment includes a case 402 that is reciprocated on the top surface of a substrate 401, which is to be subjected to surface treatment, along a transverse or longitudinal direction of the substrate 401 by moving means such as a cylinder or motor.
  • the case 402 includes a treatment gas storage unit 410 required for surface treatment and a plasma generation portion 420 that is located under the treatment gas storage unit 410 to convert treatment gases received from the treatment gas storage unit 410 into plasma.
  • the treatment gas storage unit 410 functions to stably supply treatment gases to the plasma generation portion 420 and thus the volume of the treatment gas storage unit
  • the treatment gas storage unit 410 can be selected appropriately by taking into consideration the capacity of treatment, the efficiency of conversion into plasma, and the like.
  • the treatment gas storage unit 410 includes inlets 411 and 412, through which treatment gases are taken into the treatment gas storage unit 410 to generate plasma, the inlets being formed in both sidewalls of the case 402.
  • inlets 411 and 412 are provided, there is no specific limitation on the number of the inlets 411 and 412 and various other embodiments are possible.
  • inlets may be formed in all sidewalls of the case 402 or a large inlet alone may be formed at a center portion of a wall of the case 402.
  • the plasma generation portion 420 includes long tube-like applying and ground electrodes 421 and 422 for generating plasma and has a plasma generation space 430 between the applying and ground electrodes 421 and 422 to allow generation of plasma in the plasma generation space 430.
  • An applying insulator 423 is provided outside the applying electrode 421 and ground insulators 424 are provided inside the ground electrodes 422 to provide appropriate insulation between the applying and ground electrodes 421 and 422.
  • An AC power supply 427 applies an AC voltage required to generate plasma to the applying electrode 421 and the ground electrodes 422 are grounded (428).
  • applying and ground electrodes 421 and 422 can be naturally cooled since they are exposed to gas or air introduced to generate plasma
  • general cooling means 429 may be provided for more efficient cooling in a space defined by both the case 402 and the applying and ground electrodes 421 and 422 or in a space formed outside the applying and ground electrodes 421 and 422.
  • Each of the inlets 411 and 412 and the introducing opening 425 may have a slit shape as shown in the drawings and may, of course, be embodied in various other shapes such as one or a number of circles.
  • treatment gases are taken into the treatment gas storage unit 410 through the inlets 411 and 412 formed on the case 402 and are then introduced into the plasma generation space 430 formed between the applying and ground electrodes 421 and 422 through the introducing opening 425 formed between the ground insulators 424 that insulates the ground electrodes 422.
  • the treatment gases introduced into the plasma generation space 430 are converted into plasma through the AC voltage supplied by the AC power supply 427 and the generated plasma and treatment gases that have not been converted into plasma are led out of the plasma generation space 430 through the outlet 426 formed at a position opposite the introducing opening 425.
  • the discharged plasma and treatment gases are brought into contact with the surface of the substrate 401 located under the plasma generation space 430 to treat the surface of the substrate 401.
  • applying and ground electrodes 421 and 422 may be provided at upper and lower portions, respectively, so that an approximately V-shaped plasma generation space 430 is formed between the applying and ground electrodes 421 and 422 and an introducing opening 425 may be formed at either upper end of the applying and ground electrodes 421 and 422.
  • the treatment area of plasma discharged through the outlet 426 can be increased by using a plasma generator 400 with units connected in parallel as shown in FIG. 8 according to treatment environments or the substrate 401 to be treated or by using a plasma generator 400 designed with an appropriate slope as shown in FIG. 9.
  • the treatment gas supplied to generate plasma there is no specific limitation on the treatment gas supplied to generate plasma and it is possible to use any treatment gas commonly used in the art.
  • the treatment gas include nitrogen, oxygen, a rare gas (inert gas), carbon dioxide, nitrogen oxide, a perfluorinated gas, hydrogen, ammonia, a Cl-based gas, ozone, and a mixture of these gases.
  • Helium, argon, or xenon may be used as the rare gas.
  • SF6 SF6
  • a nitrogen gas, a mixture of nitrogen and oxygen, a mixture of air and nitrogen, a rare gas, or a mixture of nitrogen and rare gas can be selected when the purpose of the treatment is to clean an organic substance on the substrate 401.
  • nitrogen When economical aspects are taken into consideration, it is more preferable to select nitrogen, a mixture of nitrogen and oxygen, or a mixture of air and nitrogen.
  • An oxidative gas such as oxygen, ozone, air, CO2, a steam, or N2O can be used solely or together with nitrogen when it is necessary to remove a resist and to etch an organic film.
  • the frequency of the AC power supply 427 which applies an AC voltage to the applying electrode 421, is within a range of 50Hz to 200MHz. Plasma discharges may become unstable if the frequency is equal to or less than 50Hz and the temperature of plasma may be significantly increased to cause arc discharges if the frequency is higher than 200MHz.
  • the frequency is preferably within a range of IkHz to 100MHz and most preferably within a range of 5kHz to 100kHz.
  • the applied voltage can be selected appropriately by taking into consideration the interval between the applying and ground electrodes 421 and 422, the total area of the electrodes, the efficiency of conversion into plasma, the type of the insulators used, and the like.
  • the applied voltage is typically controlled within a range of lkV-40kV. It is difficult to cause plasma discharges if the voltage is less than IkV and damage may be caused to the insulators if the voltage is equal to or higher than 4OkV.
  • the applied voltage is preferably 2kV-10kV and most preferably 2kV-8kV.
  • the waveform of voltage generated by the AC power supply 427 may include, but not is necessarily limited to, a pulse or sinusoidal voltage waveform.
  • the applying and ground electrodes 421 and 422 may be deformed or the dielectric constant of the insulators may be reduced to cause arc discharges.
  • This cooling structure (particularly, provided around the lower electrode) increases the distance of the substrate to be treated from the area where plasma is generated, thereby degrading the efficiency of treatment.
  • the present invention easily achieves heat radiation since new introduced gases always pass by the discharge surfaces of the inner electrode (i.e., the applying electrode 421) and the outer electrode.
  • the distance from the plasma generation area to the substrate to be treated is not reduced even if a radiator is attached to the lower portion of the ground electrode, thereby achieving a highly efficient structure.
  • the applying and ground electrodes 421 and 422 are insulated by the applying and ground insulators 423 and 424. Although the present invention has been described as using the two insulators for both the applying and ground electrodes 421 and 422, the applying and ground electrodes 421 and 422 may be insulated by an insulator provided at one of the applying and ground electrodes 421 and 422, which will be apparent to those having ordinary knowledge in the art.
  • each of the applying and ground insulators 423 and 424 is preferably within a range of 0. l-3mm.
  • the withstanding voltage of the applying and ground insulators 423 and 424 may be reduced if the thickness is less than 0.1mm.
  • cracks may occur in the insulators or the insulators may be peeled if the thickness is less than 0.1mm, thereby making it difficult to maintain the uniformity of glow discharge.
  • the withstanding voltage of the applying and ground insulators 423 and 424 may be excessively increased if the thickness is greater than 0.3mm.
  • the applying and ground electrodes 421 and 422 provided at the applying and ground insulators 423 and 424 can be formed according to a general method using a metallic material with high conductivity, for example Cu, Ag, Al, Au, Pt, Pd, Mo, or W, or a material obtained using at least one of these elements.
  • a metallic material with high conductivity for example Cu, Ag, Al, Au, Pt, Pd, Mo, or W
  • an electrode layer may be formed by coating a conductive layer with a material including a highly conductive electrode material through screen printing, calendar roll, spray, electrostatic coating, dip, knife cutter, or the like and then appropriately sintering the conductive layer and an electrode may be formed through a fusion-bonding method, a chemical vapor deposition using an electrode material, or physical vapor deposition using an electrode material.
  • the outlet 426 be formed by processing a specific area after the ground electrodes 422 and the ground insulators 424 are bonded together. More preferably, the two curved or planar ground insulators on which the ground electrodes are formed and the circular or V-shaped applying insulator on which the applying electrode is formed are combined simultaneously or individually to define the introducing opening 425, the outlet 426, and the plasma discharge interval so as to provide the structure of the present invention.
  • electrode structures may be arranged in parallel as described above and a thermometer for measuring the temperature of the surfaces of the electrodes, a monitor for displaying the measured electrode temperature, and a controller for controlling the surface temperature may also be installed to allow control of the surface temperature of the electrodes.
  • the surface treatment apparatus according to the present invention can be used, for example, for removal of contaminants such as an organic material from the surface of a substrate, resist removal, bonding of an organic film, surface deformation, improvement of film formation, reduction of a metal oxide, cleaning of a glass substrate for LCDs, oxide layer etching, silicon or metal etching, or the like.
  • the surface treatment apparatus can also be applied, for example, to PCB stripping, lead frame cleaning, pre-cleaning of large area glass for TFT-LCDs, and removal of a resist placed on large area glass for TFT-LCDs.
  • the surface treatment apparatus can be applied to all processes for packaging among semiconductor manufacturing processes, i.e., bonding, molding, soldering, chip attaching, dipping, marking processes, and the like. Further, the surface treatment apparatus can be applied to removal of metal oxides on semiconductors, formation of a hydrophilic surface, formation of a hydrophobic surface, and the like.
  • the surface treatment apparatus according to the present invention allows successive substrate surface treatment under atmospheric pressure.
  • a substrate is moved after the surface treatment apparatus according to the present invention is fixed or the surface treatment apparatus is moved with the substrate being fixed so that the surface treatment apparatus according to the present invention can be applied to successive processes.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un générateur de plasma pour traitement de surface, permettant le traitement de surfaces successives dans des conditions de pression atmosphérique, quelle que soit la forme du substrat à traiter. Ce générateur de plasma comprend : une unité de stockage de gaz de traitement nécessaire au traitement de surface, contenue dans un boîtier qui se déplace sur la surface supérieure d'un substrat ; une partie production de plasma située sous l'unité de stockage de gaz de traitement pour convertir en plasma des gaz de traitement reçus de l'unité de stockage et conduire le plasma jusqu'au substrat ; des orifices d'entrée formés dans l'unité de stockage de gaz de traitement, sur le boîtier, permettant aux gaz de traitement d'être introduits dans l'unité de stockage ; des électrodes d'application et de masse contenues dans la partie production de plasma pour produire du plasma ; un espace de production de plasma formé entre les électrodes d'application et de masse pour permettre la production de plasma ; des isolateurs d'application et de masse conçus pour isoler les électrodes d'application et de masse ; une ouverture d'introduction formée au-dessus de la partie production de plasma, de sorte que les gaz de traitement introduits dans l'unité de stockage soient introduits dans l'espace de production de plasma ; et un orifice de sortie formé en dessous de la partie production de plasma, de sorte que le plasma produit dans l'espace de production et que les gaz de traitement qui n'ont pas été convertis en plasma soient entraînés vers l'extérieur de l'espace de production de plasma.
PCT/KR2007/003843 2006-09-25 2007-08-10 Generateur de plasma WO2008038901A1 (fr)

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KR1020060093068A KR100723019B1 (ko) 2006-09-25 2006-09-25 표면처리를 위한 플라즈마 발생 장치
KR10-2006-0093068 2006-09-25

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
WO2013143080A1 (fr) * 2012-03-28 2013-10-03 深圳上理工科技开发有限公司 Dispositif de nettoyage d'air et générateur de plasma
WO2015199539A1 (fr) * 2014-06-25 2015-12-30 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Source de plasma et procédé de traitement de surface
WO2019245372A1 (fr) 2018-06-21 2019-12-26 Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno Source de plasma et son procédé de fonctionnement

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KR101108668B1 (ko) * 2009-10-08 2012-01-25 주식회사 세미라인 휘발성유기화합물 및 악취처리를 위한 저온 플라즈마 반응장치
KR101349389B1 (ko) 2012-02-16 2014-01-15 (주) 엠에이케이 플라즈마 처리장치
KR101579787B1 (ko) 2014-10-28 2015-12-29 주식회사 피글 대기압 플라즈마 가스 발생장치

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JP2001087643A (ja) * 1999-09-22 2001-04-03 Pearl Kogyo Kk プラズマ処理装置
KR200236599Y1 (ko) * 2001-04-10 2001-10-11 주식회사 싸일렌테크놀로지 상압 플라즈마 발생기

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WO2013143080A1 (fr) * 2012-03-28 2013-10-03 深圳上理工科技开发有限公司 Dispositif de nettoyage d'air et générateur de plasma
CN104039362A (zh) * 2012-03-28 2014-09-10 深圳上理工科技开发有限公司 一种空气净化装置及等离子发生器
WO2015199539A1 (fr) * 2014-06-25 2015-12-30 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Source de plasma et procédé de traitement de surface
EP2960358A1 (fr) * 2014-06-25 2015-12-30 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Source plasma et procédé de traitement de surface
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WO2019245372A1 (fr) 2018-06-21 2019-12-26 Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno Source de plasma et son procédé de fonctionnement
EP3588533A1 (fr) * 2018-06-21 2020-01-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Source de plasma et son procédé de fonctionnement
JP2021529416A (ja) * 2018-06-21 2021-10-28 ネーデルランセ オルハニサチエ フォール トゥーヘパスト−ナツールウェーテンシャッペルック オンデルズク テーエヌオーＮｅｄｅｒｌａｎｄｓｅ Ｏｒｇａｎｉｓａｔｉｅ ｖｏｏｒ ｔｏｅｇｅｐａｓｔ−ｎａｔｕｕｒｗｅｔｅｎｓｃｈａｐｐｅｌｉｊｋ ｏｎｄｅｒｚｏｅｋ ＴＮＯ プラズマ源及びその操作方法
US11610764B2 (en) 2018-06-21 2023-03-21 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Plasma source and method of operating the same
JP7295892B2 (ja) 2018-06-21 2023-06-21 ネーデルランセ オルハニサチエ フォール トゥーヘパスト－ナツールウェーテンシャッペルック オンデルズク テーエヌオー プラズマ源及びその操作方法

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