WO2008031604A1 - Procédé d'application de couches sur des substrats présentant des surfaces incurvées - Google Patents

Procédé d'application de couches sur des substrats présentant des surfaces incurvées Download PDF

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Publication number
WO2008031604A1
WO2008031604A1 PCT/EP2007/008009 EP2007008009W WO2008031604A1 WO 2008031604 A1 WO2008031604 A1 WO 2008031604A1 EP 2007008009 W EP2007008009 W EP 2007008009W WO 2008031604 A1 WO2008031604 A1 WO 2008031604A1
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WIPO (PCT)
Prior art keywords
plasma
substrate
gas
gas supply
ion beam
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PCT/EP2007/008009
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German (de)
English (en)
Inventor
Rudolf Beckmann
Markus Fuhr
Michael Klosch
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Leybold Optics Gmbh
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Application filed by Leybold Optics Gmbh filed Critical Leybold Optics Gmbh
Publication of WO2008031604A1 publication Critical patent/WO2008031604A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Definitions

  • the invention relates to a method for depositing layers having a uniform layer thickness distribution on at least one curved surface of a substrate by means of a plasma CVD process.
  • Vacuum coating methods for depositing layers for a variety of applications are well known.
  • Deposited on a substrate layers have different layer properties depending on their deposition process. These are, for example, mechanical properties, in particular hardness, abrasion resistance, scratch resistance, electrical and magnetic properties, in particular conductivity, magnetizability, optical properties, in particular transparency, color, reflectivity, anti-reflection ability for incident light, and chemical properties, in particular wettability.
  • the layer properties are primarily dependent on the composition of the chemical elements of the layer itself, the layer thickness and layer thickness uniformity, the geometric extent of the layer, but also on the nature of the layer formation process and properties of the substrate, in particular material and geometry.
  • plasma CVD chemical vapor deposition
  • organosilicon compounds are polymerized
  • the plasma jet / ion beam can consist of a plasma jet / ion beam source arranged in the process chamber, as described, for example, in "The Physics and Technology of Ion Sources, Ed. Brown, Wiley, 1989 and in EP 349 556 B1 and DE 10317 027 A1 are extracted.
  • the above-described plasma CVD processes provide abrasion-resistant coatings or scratch-resistant coatings with very good mechanical properties.
  • the requirements for the uniformity of the coating is much lower than, for example, for optical coatings.
  • no optical coatings having a sufficiently precise layer thickness or layer thickness distribution can be produced using the methods described above.
  • Optical coatings are therefore usually applied by means of PVD (physical vapor deposition), in particular by means of vapor deposition methods, as these include u.a. the required accuracy of the layer thicknesses and layer thickness distribution for optical coatings is to be realized.
  • PVD physical vapor deposition
  • a substrate for example a plastic lens
  • optical layers for example with an anti-reflection layer
  • the substrate is supplied to a further coating installation for applying the optical coating. Since this procedure is very expensive, efforts are also being made to apply the optical coatings by means of a plasma CVD process which enables an improved layer thickness distribution.
  • problems arise in the production of high-quality and aging-stable layers or layer systems in plasma CVD processes due to high thermal stress on the substrates and layers.
  • the coating of a curved substrate with a scratch-resistant layer and an optical coating with a plasma pulse CVD method is disclosed. Based on the approach that the thickness of the coating depends essentially on the amount of the layer-forming material in the volume element on the surface element to be coated, it is proposed to introduce the process gases via a gas zone shower in the process chamber, while the pulse interval is shortened so that no complete gas exchange takes place more in the pulse break, but a residual gas content remains in the process chamber, which ensures that the layer thickness is no longer determined by the height of the volume elements between substrate and gas shower surface.
  • the gas zone shower is divided into several gas passage areas (zones), the size of the Gas passage surfaces and / or the mass flow through the gas passage surfaces is adjustable.
  • the gas mass flux density is set the same in all zones and the pulse break iteratively determined, which provides an optimal layer thickness distribution. Subsequently, the mass flow and / or the concentration of the process gas in certain zones of the gas shower is increased or decreased in order to further increase the uniformity of the layer thickness.
  • This solution is limited to plasma pulse CVD method and only very expensive adaptable to different substrate geometries.
  • the gas zone shower is not flexibly applicable, since this must be arranged directly below the substrate surface and the use of other system components, such as an ion beam source to support the coating process, difficult or impossible.
  • US Pat. No. 4,970,435 already discloses a reaction chamber with a plasma apparatus in which a plasma is generated in a plasma chamber by means of microwave radiation and an object arranged opposite the plasma chamber is processed. In a region near the object surface, a reaction gas is injected into the plasma.
  • the object is semiconductor wafer.
  • the object of the present invention is to provide a method for depositing layers on at least one curved surface of a substrate by means of a plasma CVD process while avoiding the drawbacks described in the prior art.
  • the Plasma or ion beam source comprises a plasma chamber having a plasma chamber
  • the plasma chamber includes a peripheral chamber wall with an outlet opening and substrate and outlet opening spaced from each other and a process gas with at least one monomer via a gas supply system in the vacuum chamber is admitted and applied to an area near the surface of the substrate
  • the plasma or ion beam source with a frequency of ⁇ than 100 MHz, preferably 80 MHz, more preferably 13.56 MHz is operated and the average ion energy in a range close to Surface of the substrate is less than 100 eV.
  • a directed movement of the energetic particles of the plasma of the plasma or ion beam source in the direction of the substrate as well as the diffusion of the excited excitation gas from the plasma or ion beam source in the direction of the substrate is defined as the plasma or ion beam.
  • the curved substrate surface to be coated is irradiated in a vacuum chamber with a plasma or ion beam which is generated by a plasma or ion beam source located opposite the substrate.
  • the plasma excitation by means of an excitation gas takes place away from the substrate in the plasma or ion beam source.
  • a process gas is introduced into the vacuum chamber via a gas supply system, the process gas being supplied by the gas supply system to a region near the surface of the substrate and a gas flow of the excitation gas and / or a plasma power of the plasma or ion beam source being adjusted which is a largely applied to the surface of the substrate acted upon process gas quantity.
  • the plasma or ion beam can advantageously be generated by means of a gridless plasma or ion beam source as direct plasma.
  • the plasma or ion beam source may also include a DC plasma source, an RF plasma source, an Oechsner source, an APS source, a Hall-end source or a source with a be transparent interface for coupling of electrical radiation between a radiation unit and the plasma chamber.
  • the substrate is floating, that is, electrically insulated from the chamber wall and / or the plasma or ion beam source arranged, since hereby surprisingly better layer properties can be achieved.
  • a plasma or ion beam is generated, which has a beam cross section, which is suitable to detect the entire substrate surface.
  • the plasma jet is generated by a high frequency plasma jet source.
  • a high-frequency plasma jet source both a parallel and a divergent plasma jet can be directed onto the substrate surface.
  • High-frequency plasma jet sources are described in the prior art, for example in EP 349 556 B1 and DE 103 17 027 A1, and reference is made to the technical configurations of the embodiments disclosed therein.
  • the source may be one of the sources described in EP 463 239 B1 or DE 10 2004 039 969 A1.
  • the process gas is introduced into the vacuum chamber via a gas supply system, wherein the process gas is distributed by means of the gas supply system defined on the surface of the substrate and the plasma or ion beam simultaneously acts on the substrate surface during the growth of the layer.
  • the process gas is preferably introduced downstream of the plasma or ion beam source, in particular in the immediate vicinity of the substrate surface, and introduced into the plasma or ion beam and activated there, so that the reaction of the monomer by the interaction with the excited excitation gas of the plasma or ion beam in the immediate Near the substrate surface takes place and the influence on the flow of the admitted process gas is further reduced.
  • the process gas is admitted within the plasma or ion beam source.
  • This embodiment variant is particularly advantageous if the substrate is arranged at a small distance from the plasma or ion beam source.
  • the process gas is distributed on the surface of the substrate in a defined manner by means of the gas supply system.
  • the process gas is distributed with high uniformity at the surface of the substrate. An even distribution of the process gas is given when the amount of Process gas in the volume element over each surface element of the same size to be coated is the same.
  • a distribution of the process gas is preferably carried out by a plurality of gas bores of the gas supply system, which have predetermined geometric dimensions for a defined distribution and a defined arrangement to one another and to the substrate surface.
  • a further aspect of the invention is the adjustment of a gas flow of the excitation gas and a plasma power of the plasma or ion beam source, in which the layer-forming process gas present on the surface of the substrate is largely, i. at least 51%, is implemented and deposited as a layer.
  • the layer-forming process gas present on the surface of the substrate is largely, i. at least 51%, is implemented and deposited as a layer.
  • Preferred is a conversion of at least 60%, 70%, 80% or 90%.
  • a conversion of 100% can be provided.
  • the coating rate and thus the layer thickness is determined essentially by the amount of process gas at the substrate surface.
  • the reaction is preferably carried out by the excitation gas of the plasma or ion beam at the surface of the substrate
  • a threshold value of a ratio between the process gas flow and the excited excitation gas flow is preferably determined, from which the coating rate no longer increases with an increase in the plasma power.
  • a ratio of process gas flow to excitation gas flow is set below twice the threshold value, particularly preferably below the simple threshold value.
  • the layer thickness uniformity can be increased when the simple threshold value is approached and undershot, and if the simple threshold value is approached and the double threshold value is exceeded, layer properties, for example with regard to reduced brittleness and layer stress, can be adapted.
  • a relatively low pressure in the range of 0.1 Pa to 10 Pa is preferably set, so that the flow of a recessed process gas is not or only slightly changed.
  • layers with a uniform layer thickness whose deviation is less than +/- 6% can be deposited on a strongly curved surface of a substrate.
  • the uniformity of the layer thickness also depends on the strength of the curvature of the substrates. In the case of less curved substrates, for example lenses with a dioptric number less than or equal to 4, it is preferable to deposit layers with a uniform layer thickness whose deviation is less than +/- 2%.
  • Such a small deviation of the layer thickness of the layers applied to curved surfaces of substrates is achieved by the process according to the invention in that by the set process parameters with which a homogeneous excitation of the process gas at the substrate surface by the plasma or ion beam and a nearly complete implementation of Process gas at the substrate surface is made possible, the layer thickness at a point P of the substrate surface is essentially only dependent on the amount of process gas flowing to this point P process gas, so that by means of a correspondingly adapted to the geometry of the substrate surface gas supply by a corresponding distribution of the process gas the layer thickness and layer thickness distribution can be adjusted specifically and accurately.
  • the geometric design and arrangement of the gas bores of the gas supply system for a uniform distribution of the process gas quantity and thus a uniform layer thickness distribution can be derived from the calculation of the layer thickness at a point P of the surface.
  • the layer thickness at a point P of the surface results from the sum of all portions of the process gas quantity which are conducted from the individual gas bores to the point P.
  • the layer thickness distribution results from the calculation of the layer thicknesses at all points P of the surface.
  • the process gas supply and distribution takes place via a first annular gas supply unit of the gas supply system and at least one second gas supply unit of the gas supply system.
  • the second gas supply unit is preferably likewise designed ring-like or as a centric to the first annular gas supply unit or to the plasma or ion beam arranged gas supply pipe.
  • annular gas supply units allow the arrangement of a plasma or ion beam source with respect to a surface of the substrate to be coated, wherein the gas supply units, the process gas directly into the plasma or ion beam, preferably can initiate directly into the film forming zone.
  • the gas supply units are arranged downstream of the plasma or ion beam source.
  • the gas supply units may also surround the plasma or ion beam source or be located within the plasma or ion beam source.
  • the setting of geometric parameters for generating a desired distribution of the process gas on the substrate surface is preferably carried out by adjusting the distances of the gas supply units to the substrate or to the substrate level and by using gas supply units each having a definable circumference or radius and by the design of the gas outlet openings.
  • gas supply units each having a definable circumference or radius and by the design of the gas outlet openings.
  • two or more gas supply units with the same circumference and different distances to the substrate, two or more gas supply units with different circumference and the same distance from the substrate and two or more gas supply units with different circumference and distances from the substrate can be used.
  • outlet openings are circular in shape and arranged uniformly and concentrically to the beam axis of the plasma or ion beam, since this produces uniform gas flows.
  • Another important parameter for setting a desired distribution of the process gas on the substrate surface is the setting of a specific gas flow for a defined time or a specific gas quantity for each gas supply unit.
  • the process gas flow or the process gas quantity is preferably set or regulated separately for each gas supply unit.
  • a dimensioning of the geometric parameters and the determination of the amount of gas to be adjusted can be done with simulation calculations.
  • the coating rate in some plasma CVD processes can also be influenced by the substrate temperature, it is advantageous in these cases if the substrate can be heated before the coating and thus an exact substrate temperature can be set.
  • the exhaust gas is preferably sucked off in such a way that the suction does not obstruct the gas flows of the process gas and the excitation gas as little as possible.
  • an extraction by means of a ring-like, between plasma or ion beam source and substrate arranged Abgasabsaugaji wherein the exhaust gas is sucked radially.
  • the substrate is coated on both sides.
  • the gas supply and / or the irradiation with a plasma or ion beam on both sides of the substrate by one of the front and the rear associated gas supply system and / or by one of the front and the back associated plasma or ion beam source.
  • a change of the process gas for the application of different layers can be realized during the process without interruption of the gas supply. Furthermore, scratch-resistant and optical layers (such as antireflection layers) can be made in the same plasma CVD coating apparatus, preferably without breaking the vacuum.
  • Figure 2 shows the dependence of the layer thickness distribution of the ratio of
  • the device comprises a process chamber 2 with a vacuum pump 4, with a substrate holder 5, on which the substrate 6 is arranged with a curved surface Gas supply system 12 for supplying at least one process gas and a high frequency plasma jet source 7 for generating a plasma jet 1.
  • the substrate holder 5 or the substrate 6 may be floating, that is electrically isolated from the vacuum chamber and / or the source 7 may be arranged. In another embodiment, the substrate holder 5 and the substrate 6 are grounded. Deviating from the illustration in FIG. 1, it is also possible for a plurality of substrates to be arranged on the substrate holder on a substrate holder and to be coated simultaneously.
  • the surface of a substrate may in particular be curved convexly or concavely. Typically, the substrates to be coated are circular, but substrates with other geometric shapes may also be coated.
  • the high-frequency plasma jet source 7, hereinafter referred to as Hf plasma jet source 7, generates a parallel or divergent neutral plasma jet 1 which irradiates the entire surface of the substrate 6 to be coated.
  • the Hf plasma jet source 7 is designed as a plasma chamber 11 and arranged in a region of the process chamber 2 designed as a vacuum chamber.
  • the RF plasma jet source 7 has a plasma chamber 8 in which a plasma is ignited, for. B. by a high-frequency radiation.
  • electrical means not shown, are provided, such as a radio frequency transmitter and electrical connections.
  • at least one magnet 9 can be provided, which is used in the usual way for enclosing the plasma in the plasma chamber 8.
  • the Hf plasma jet source 7 is operated, for example, with the method described in the literature under the ECWR principle for increasing the efficiency of the gas discharge.
  • a supply 10 is provided for a gas supply to the RF plasma jet source 7 with an excitation gas.
  • an extraction grid with preferably high transmission is arranged in a region of an outlet opening.
  • the source may be lattice-free so that the plasma jet is formed by the direct plasma of the source and the substrate is exposed to the direct plasma of the source.
  • the gas supply units 16, 17 of the gas supply system 12 are arranged, which introduce the process gas in the plasma jet 1 and evenly distributed on the substrate surface.
  • the annular gas supply units 16, 17 surround the plasma jet 1 and are preferably designed so that the plasma jet 1 can pass unhindered to the substrate 6.
  • the process gas required for the layer to be applied is conducted from a storage container via the first gas supply 22 into the first gas supply unit 16 and / or via the second gas supply 23 into the second gas supply unit 17 and flows through the openings 18 the process chamber 2 to the location of the layer forming zone.
  • the gas supply lines 22 and 23 are preferably connected to a (not shown) gas distribution system of the gas supply system 12, which has different reservoirs for different process gases.
  • a change of the process gas for application of the various layers can then be realized during the process without interrupting the gas supply and / or breaking the vacuum.
  • the geometric parameters of the gas supply units 16, 17 are adapted for a uniform distribution of the process gas to the geometry and surface of the substrate 6.
  • the geometric parameters, in particular the arrangement, diameter and exit angle of the outlet openings 18 of the gas supply units 16, 17 were derived for a uniform layer thickness distribution from the formula:
  • R PA length of the connecting path between the outlet opening and the point P on the substrate surface a angle between the connecting line R PA and the cylinder axis of the outlet opening ß angle between the connecting line R PA and the surface normal at the point P n can be determined from the directionality of the out of the outlet opening emitted gas jet (in analogy to the distribution calculation of the layer thickness in the vapor deposition technique, described in G. Deppisch: layer thickness uniformity of vapor-deposited layers, vacuum technique, Issue 3, Jg. 30 (1981) pp 67-77)
  • the geometric centers of the annular gas supply units 16, 17 are preferably perpendicular to the substrate plane 13 and through the geometric center of the substrate 6 extending axis 3.
  • the gas supply units 16, 17 preferably have the same circumference, wherein the circumference of the gas supply units 16, 17 is preferably greater than the circumference of the substrate 6 and the distances of the gas supply unit 16,17 to the substrate 6 are set differently.
  • Each of the gas supply units 16, 17 has, for example, ten outlet openings 18, which are arranged at equal distances from each other on the circumference of a gas supply unit 16, 17 and designed with a uniform hole size.
  • the angles of the outlet openings 18 to the axis 3 of the gas supply units 16, 17 are each 60 °.
  • FIG. 2 by way of example for the coating of an optical lens with a TiO 2 layer, it is shown how the uniformity of the layer thickness distribution can be set via the adjustment of the gas flows.
  • the TiO 2 layers were applied by means of the above-described gas supply system 12 with predetermined gas flows through the Gaszuschreibajien 16, 17 on a 4 dpt curved convex surface of a lens with 70 mm diameter, as described in more detail below.
  • the ratio of the gas flows through the first gas supply unit 16 and the second gas supply unit 17 was 25% steps of 100% gas flow through the first gas supply unit 16 and 0% by the second gas supply unit 17 (100% and 0% in line 2) down to 0% gas flow through the first gas supply unit 16 and 100% through the second gas supply unit 17 (line 0% and 100% in FIG. 2) for one coating test each time (and in each case the plasma jet source is filled with an oxygen gas and fired).
  • the gas flows are normalized to 100%; 100% corresponds to the maximum gas flow supplied by the gas flow controllers used.
  • the gas flows through the gas supply units 16, 17 are thus adjusted by setting two independent gas flow controllers.
  • a gas flow regulator can be used and the gas flow can be set via a "variable three-way valve".
  • the layer thickness of the substrate 6 was measured from the center (0 mm) to the left edge (+30 mm) and the right edge (-30 mm).
  • the diagram in Fig. 2 shows that when using only the first gas supply unit 16 (line 100% and 0% in Figure 2), the layer thickness in the center of the substrate 6 is highest. In contrast, when using only the second gas supply unit 17 (line 0% and 100% in FIG. 2), the layer thickness is lowest in the center of the substrate 6.
  • the optimum for a plane surface is 15% through the second gas supply unit 17 and 85% through the first gas supply unit 16.
  • the substrate 6 for example, an optical lens of 4 dpt is to be coated with a scratch-resistant layer and a multilayer anti-reflection layer.
  • the substrate 6 is made of a polymeric material, such as CR 39.
  • the substrate 6 is merely exemplary. For better adhesion of the applied scratch-resistant layers to be coated surface of the substrate 6 is pretreated prior to coating with the plasma jet 1 in the evacuated vacuum chamber 2.
  • a scratch-resistant layer of about 3 .mu.m is preferably introduced as a process gas, a silicon-containing monomer, for example HMDS-O (hexamethyldisiloxane) via the gas supply units 16, 17 in the plasma jet 1 generated by the RF plasma jet source 7 and as described above by adjusting the geometric parameters of the gas supply units 16, 17 and the gas flows with approximately 25% gas flow through the first gas supply unit 16 and 75% evenly distributed by the second gas supply unit 17.
  • HMDS-O hexamethyldisiloxane
  • the generation of the plasma jet 1 is effected as described above by introducing excitation gases, such as oxygen, argon, nitrogen or a mixture of these gases via the gas supply 10 into the RF plasma jet source 7.
  • excitation gases such as oxygen, argon, nitrogen or a mixture of these gases
  • the layers for the antireflection coating of the substrate 6 can be applied immediately after the application of the scratch-resistant layer.
  • a titanium-containing monomer for generating a high-index layer and a silicon-containing monomer for generating a low-refractive layer in the plasma jet 1 are alternately introduced via the gas supply system 12, for example as a process gas.
  • four single layers (12 nm TiO 2, 25 nm SiO 2, 123 nm TiO 2, 86 nm SiO 2) are applied as a broadband antireflective layer.
  • the generation of the plasma jet 1 takes place with introduction of oxygen, argon, nitrogen gas mixtures via the gas supply 10 into the RF plasma jet source 7.
  • a pressure of preferably 0.5 to 5 Pa is set in the vacuum chamber, so that the gas flows of the monomer gas passing out of the outlet openings 18 are maintained.
  • an RF power of the plasma jet source of more than 400 W is set, in which the layer thickness is determined only by the amount of monomer gas.
  • the generated plasma jet 1 thus completely and homogeneously decomposes the monomer gas at the substrate surface.
  • the scratch-resistant layer and the anti-reflection layers were coated with a uniform layer thickness whose deviation is less than +/- 2%. LIST OF REFERENCE NUMBERS
  • Substrate surface first gas supply unit second gas supply unit

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Abstract

L'invention concerne un procédé de séparation de couches à répartition d'épaisseur uniforme appliquées sur une surface incurvée d'un substrat (6), à l'aide d'un procédé de dépôt chimique en phase vapeur assisté par plasma, selon lequel un faisceau plasmique ou ionique est produit en direction de la surface du substrat par une source de faisceau plasmique ou ionique (7) opposée au substrat (6), un gaz de procédé est admis par un système d'alimentation en gaz (12) en aval de la source de faisceau plasmique ou ionique (7), ledit gaz de procédé étant réparti par le système d'alimentation (12) en gaz de manière définie sur la surface (14) du substrat (6) et un flux de gaz d'excitation et une puissance plasmique de la source de faisceau plasmique ou ionique étant réglés, le volume de gaz de procédé étant ainsi transformé quasiment en totalité par le gaz d'excitation excité du faisceau plasmique ou ionique à la surface du substrat.
PCT/EP2007/008009 2006-09-14 2007-09-14 Procédé d'application de couches sur des substrats présentant des surfaces incurvées WO2008031604A1 (fr)

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DE200610043943 DE102006043943A1 (de) 2006-09-14 2006-09-14 Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen
DE102006043943.0 2006-09-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ306854B6 (cs) * 2016-07-27 2017-08-09 Univerzita PalackĂ©ho Způsob vytváření tenkých depozičních vrstev pomocí nízkotlakého plazmatu a zařízení k provádění tohoto způsobu

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107089238B (zh) * 2017-03-23 2020-04-24 西南交通大学 一种高速列车节能减阻方法和装置
TW202001977A (zh) * 2018-06-08 2020-01-01 財團法人工業技術研究院 處理基板邊緣缺陷之電漿系統及使用此系統之處理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664747A (en) * 1985-03-28 1987-05-12 Anelva Corporation Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same
US6397776B1 (en) * 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators
EP0748260B1 (fr) * 1994-03-03 2003-05-14 Morgan Chemical Products Inc. Procede a faisceau d'ions pour le depot de revetements hautement resistants a l'abrasion
EP1365042A1 (fr) * 2002-05-21 2003-11-26 OTB Group B.V. Méthode de passivation d'un substrat semi-conducteur
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960014434B1 (ko) * 1987-12-09 1996-10-15 후세 노보루 플라즈마 처리장치
EP0753082B1 (fr) * 1994-03-29 1999-07-07 Schott Glas Procede plasma-cvd de revetement de substrats bombes
FR2731370B1 (fr) * 1995-03-07 1997-06-06 Cie Generale D Optique Essilor Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
WO1999045585A1 (fr) * 1998-03-05 1999-09-10 Tokyo Electron Limited Appareil et procede de traitement au plasma

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664747A (en) * 1985-03-28 1987-05-12 Anelva Corporation Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same
EP0748260B1 (fr) * 1994-03-03 2003-05-14 Morgan Chemical Products Inc. Procede a faisceau d'ions pour le depot de revetements hautement resistants a l'abrasion
US6397776B1 (en) * 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
EP1365042A1 (fr) * 2002-05-21 2003-11-26 OTB Group B.V. Méthode de passivation d'un substrat semi-conducteur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ306854B6 (cs) * 2016-07-27 2017-08-09 Univerzita PalackĂ©ho Způsob vytváření tenkých depozičních vrstev pomocí nízkotlakého plazmatu a zařízení k provádění tohoto způsobu

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