WO2008028352A1 - Appareil de régulation de la température et procédé de régulation de la température d'une tranche - Google Patents

Appareil de régulation de la température et procédé de régulation de la température d'une tranche Download PDF

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Publication number
WO2008028352A1
WO2008028352A1 PCT/CN2006/003175 CN2006003175W WO2008028352A1 WO 2008028352 A1 WO2008028352 A1 WO 2008028352A1 CN 2006003175 W CN2006003175 W CN 2006003175W WO 2008028352 A1 WO2008028352 A1 WO 2008028352A1
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Prior art keywords
edge
gas passage
cold gas
back cold
wafer
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PCT/CN2006/003175
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English (en)
French (fr)
Inventor
Lijian Liu
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Beijing Nmc Co., Ltd.
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Publication of WO2008028352A1 publication Critical patent/WO2008028352A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present invention relates to a temperature control system in a semiconductor manufacturing process, and more particularly to a temperature control device for a wafer etching apparatus, and a method of controlling the temperature of the wafer.
  • BACKGROUND OF THE INVENTION Chucks are used to secure and support wafers in semiconductor manufacturing processes to avoid wafer movement or misalignment during processing.
  • Electrostatic chucks use electrostatic attraction to hold the wafer, which has many advantages over previously used mechanical chucks and vacuum chucks. The electrostatic chuck reduces wafer damage caused by pressure, collision, etc. when using the mechanical chuck; increases the area where the wafer can be effectively processed; reduces the deposition of corrosive particles on the wafer surface; and can be in a vacuum process environment jobs.
  • a typical electrostatic chuck consists of a base and an electrostatic module attached thereto.
  • the electrostatic module contains at least one electrode, and the electrode is wrapped by an insulating layer.
  • a DC bias is applied to the electrodes of the electrostatic chuck to cause charge accumulation on the electrodes.
  • charge accumulation occurs on the wafer, and the accumulated charge polarity is opposite to that of the electrostatic chuck electrode, thereby between the electrode and the wafer.
  • Generate Coulomb gravity In the case of two-electrode driving, two electrodes with different polar charges are used to generate gravity for the wafer.
  • a typical electrostatic chuck has a cooling liquid passage therein, and the temperature of the cooling liquid flowing therethrough is controlled by a cooler to control the temperature of the electrostatic chuck.
  • the temperature control of the wafer is achieved by controlling the temperature of the electrostatic chuck, but since the contact surface between the wafer and the electrostatic chuck is not absolutely smooth, the heat conduction effect between each other is not good. It is common practice to pass a refrigerant gas between the back of the wafer and the electrostatic chuck, usually using a back-cooling gas.
  • the traditional temperature control method for electrostatic chuck control system usually uses a method on the electrostatic chuck.
  • the back cold gas passage, the back cold gas is introduced through the passage.
  • a certain air guiding groove system is formed on the wafer supporting surface of the electrostatic chuck, and the groove system on the surface of the wafer and the electrostatic chuck forms a nearly closed chamber structure, and the back cooling gas circulates in the chamber.
  • the electrostatic chuck wafer support surface is planar in an annular region 10 to 20 mils from the edge of the wafer. This causes the back cold gas to not reach the edge portion of the wafer sufficiently, resulting in poor heat dissipation at the edge portion of the wafer and high temperature.
  • the disk diameter of the electrostatic chuck is usually designed to be smaller than the diameter of the wafer, which results in the edge portion of the wafer not being placed on the electrostatic chuck, but placed on the other Parts such as the focus ring, these parts have no temperature control. And there is no back cold gas at the edge portion of the wafer. These factors all contribute to uneven temperature of the wafer during the process.
  • An object of the present invention is to provide a temperature control device for an etching device which is simple in structure and convenient to use, and a method for controlling the temperature of a wafer by using the device, which can change the heat dissipation effect of the edge portion of the wafer and effectively control the wafer. temperature.
  • the temperature control device of the present invention is disposed at an electrostatic chuck for controlling the temperature of the electrostatic chuck, the wafer can be placed on the electrostatic chuck, and the electrostatic chuck is provided with a central back cold gas passage and an edge back a cold gas passage, and the central back cold gas passage is not in communication with the edge back cold gas passage; the central back cold gas passage and the edge back cold gas passage are respectively connected to the gas source.
  • the central back cold gas passage is in close contact with the portion in contact with the wafer and is well sealed.
  • the edge of the edge back cold gas passage is slightly rough at a portion of the contact surface of the wafer in contact with the wafer, and the back cold gas may leak along the rough surface portion.
  • the edge of the electrostatic chuck is provided with one or more back cold gas leakage holes, and the back cold gas leakage holes communicate with the edge back cold gas passage.
  • the temperature control device is applied to an etching device.
  • the central back cold gas passage is connected to the central gas passage, the edge back cold gas passage is connected to the edge gas passage; the central gas passage is provided with a pressure controller, and the edge gas passage is provided with a shield flow controller The central gas path and the edge gas path are respectively connected to the gas source.
  • the central back cold gas passage and the edge back cold gas passage are respectively provided with a plurality of groups, which are not connected to each other; the central gas passage and the edge gas passage are respectively provided with one or more roads.
  • the gas source has one or more.
  • the method for controlling the temperature of the wafer by the temperature control device comprises the following steps:
  • the back cold gas is introduced from the gas source to the central back cold gas passage and the edge back cold gas passage, and the back cold gas in the edge back cold gas passage is partially leaked;
  • step spine A In the step spine A:
  • the back cold gas in the edge back cold gas passage leaks through the rough surface at the edge of the electrostatic chuck or the back cold gas leak hole;
  • step B
  • the pressure of the back-cooling gas in the back-cooling gas passage of the center is controlled by a pressure controller provided on the central gas path; and the flow rate of the back-cooling gas in the edge back-cooling gas passage is controlled by a mass flow controller provided on the edge gas path.
  • the back cold gas is helium.
  • the temperature control device of the etching device of the present invention has a center back cooling gas passage and an edge back cooling gas passage which are not connected to each other on the electrostatic chuck.
  • the portion of the back cold gas passage that is in contact with the wafer is in close contact and well sealed; the edge of the edge back cold gas passage is slightly rough with the contact surface of the wafer, or one or more back cold gas leakage holes are provided at the edge of the electrostatic chuck.
  • the back cold gas in the edge back cold gas passage may leak along the rough surface or the leak hole portion.
  • the temperature in the middle of the wafer can be controlled by controlling the pressure of the back cold gas in the back cold gas passage of the control center.
  • the flow rate of the back cold gas in the edge back cold gas passage can be controlled to improve the heat dissipation effect at the edge of the wafer and control the temperature of the edge portion of the wafer.
  • the pressure control is provided on the central gas path and the mass flow controller is provided on the edge gas path, the pressure control of the back cold gas in the central back cold gas passage can be conveniently realized, and the back cooling of the edge back cold gas passage can be realized. Gas flow control.
  • FIG. 1 is a schematic structural view of a temperature control device of an etching apparatus of the prior art
  • FIG. 2 is a schematic structural view of a temperature control device of a prior art two etching device
  • FIG. 3 is a structural diagram of a first embodiment of a temperature control device for an etching apparatus according to the present invention
  • FIG. 4 is a structural diagram of a second embodiment of the temperature control device of the etching apparatus of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention is shown in FIG. 3, and is disposed at an electrostatic chuck 5 of an etching device for controlling the temperature of the electrostatic chuck 5.
  • the electrostatic chuck 5 can be placed with a wafer 1 and static electricity.
  • the chuck 5 is provided with a central back cold gas passage 2 and an edge back cold gas passage 4, and the central back cold gas passage 2 is not in communication with the edge back cold gas passage 4.
  • the central back cold gas passage 2 and the edge back cold gas passage 4 are connected to the gas source 10, respectively.
  • the portion of the center back cold gas pass 2 that is in contact with the wafer 1 is in close contact and is well sealed. It is advantageous to control the pressure of the back cold gas in the back cold gas passage 2 of the center to control the temperature of the wafer 1.
  • the back cooling gas in the edge back cold gas passage 4 needs to have a certain leak to improve the heat dissipation effect at the edge portion of the wafer 1.
  • the preferred embodiment 1 of the present invention is as shown in FIG. 3:
  • One or more back cold gas leak holes 11 are provided at the edge of the electrostatic chuck 5, and the back cold gas leak hole 11 communicates with the edge back cold gas passage 4, and the back cold gas can leak along the edge back cold gas passage 4.
  • a preferred embodiment 1 of the present invention is as shown in FIG. 4:
  • the portion of the contact surface 3 which is in contact with the wafer 1 at the edge of the edge back cold gas passage 4 is slightly rough, and the back cold gas can partially leak along the rough surface 3.
  • the central back cold gas passage 2 is connected to the central gas passage 9, and the edge back cold gas passage 4 is connected to the edge gas passage 7.
  • a pressure controller 8 is disposed on the central gas path 9, and a mass flow controller 6 is disposed on the edge gas path 7.
  • the central gas path 9 and the edge gas path 7 are connected to the gas source 10, respectively.
  • the pressure of the back cold gas in the central back cold gas passage 2 is controlled by the pressure controller 8 to control the temperature of the wafer 1.
  • the flow rate of the back cold gas in the edge back cooling gas passage 4 is controlled by the mass flow controller 6 to improve the heat dissipation effect of the edge portion of the wafer 1.
  • the central back cold gas passage 2 and the edge back cold gas passage 4 may be respectively provided with a plurality of groups, which are not connected to each other.
  • the plurality of sets of central back cold gas passages 2 may be uniformly supplied by one central air passage 9, or may be supplied by multiple central air passages 9, respectively.
  • the plurality of sets of edge back cold gas passages 4 may be uniformly supplied by one of the edge gas passages 7, or may be supplied by the multiple edge gas passages 7 respectively.
  • the gas source 10 used has a centralized gas supply, and two or more gas supplies to the central back cold gas passage 2 and the edge back cold gas passage 4, respectively.
  • the method for controlling the temperature of a wafer by using the temperature control device of the above etching apparatus comprises the following steps:
  • Step 1 Passing the back cold gas from the gas source to the central back cold gas passage and the edge back cold gas passage, and partially leaking the back cold gas in the edge back cold gas passage;
  • Step 2 Control the temperature in the middle of the wafer by controlling the pressure of the back cold gas in the back cold gas passage of the control center; and controlling the temperature of the edge portion of the wafer by controlling the flow rate of the back cold gas in the edge back cold gas passage.
  • step 1 the back cold gas in the edge back cold gas passage leaks through the rough surface at the edge of the electrostatic chuck or the back cold gas leak hole;
  • step 2 control the pressure of the back cold gas in the back gas passage of the center through a pressure controller provided on the central gas path; and control the back of the edge back cold gas passage through the mass flow controller provided on the edge gas path The flow of cold gas.
  • the back cold gas in the edge back cold gas passage can be partially leaked, thereby improving the heat dissipation effect of the wafer edge;
  • the pressure of the back cold gas in the back cold gas passage of the center is beneficial to control the temperature of the wafer.
  • the back cold gas used in the system is helium, nitrogen or other gases.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Description

控温装置及其控制晶片温度的方法
技术领域 本发明涉及一种半导体生产工艺中的控温系统， 尤其涉及一种晶片刻蚀 设备的控温装置， 及其控制晶片温度的方法。 背景技术 卡盘在半导体生产工艺中被用来固定和支撑晶片， 避免晶片在处理过程 中出现移动或者错位现象。 静电卡盘采用静电引力来固定晶片， 相对于以前 采用的机械卡盘和真空卡盘， 具有很多优势。 静电卡盘减少了在使用机械卡 盘时由于压力、 碰撞等原因造成的晶片破损； 增大了晶片可被有效加工的面 积； 减少了晶片表面腐蚀物颗粒的沉积； 并且可以在真空工艺环境下工作。
典型的静电卡盘由基座和固定在其上的静电模块构成。 静电模块包含至 少一个电极， 电极被绝缘层包裹。 在静电卡盘工作时， 在静电卡盘电极上加 直流偏压， 从而使电极上产生电荷积累。 在使用单电极驱动的情况下， 反应 腔室内的等离子体的作用下， 使得晶片上出现电荷积累， 积累的电荷极性与 静电卡盘电极上的电荷极性相反， 从而在电极和晶片之间产生库仑引力。 在 使用双电极驱动的情况下， 两个积累了不同极性电荷的电极被用于对晶片产 生引力。
典型的静电卡盘在其中具有冷却液体通道， 通过冷却机（Chiller )控制 流过其中的冷却液体的温度， 来控制静电卡盘的温度。
晶片的温控是通过控制静电卡盘的温度实现的， 但是因为晶片与静电 卡盘之间的接触面不可能绝对平滑， 因此相互之间的热传导效果不好。 通用 的做法为在晶片背面和静电卡盘之间通入冷媒气体， 通常使用背冷气体。
传统的静电卡盘控温系统釆用的控温方法通常是在静电卡盘上制作一个 背冷气体通道， 背冷气体由该通道导入。 静电卡盘的晶片支撑面上制作了一 定的导气凹槽系统， 晶片和静电卡盘表面的凹槽系统形成了一个接近密闭的 腔室结构， 背冷气体就在这个腔室内流通。 在釆用这种方法时， 为了避免背 冷气体的泄露， 要求导气系统不能延伸到晶片支撑的边缘部分， 导气系统的 边缘和晶片边缘之间一般需要留 10到 20毫米的距离。 即在距离晶片边缘 10到 20亳米的环形区域内， 静电卡盘晶片支撑表面为平面。 这就导致背冷气体不 能充分到达晶片的边缘部分， 造成晶片边缘部分散热效果较差， 温度较高。
相反， 如果使导气系统过分向晶片边缘部分延伸， 会加大背冷气体的 泄露量， 这将降低系统对晶片温度、 特别是边缘温度的控制能力， 使晶片上 出现冷热不均的区域， 造成整个晶片的温度下降。'
另外， 因为害怕在工艺过程中， 静电卡盘受到等离子体伤害， 静电卡 盘的盘面直径通常设计为小于晶片的直径， 这就导致晶片边缘部分不能放置 在静电卡盘上， 而是放置在其它部件如聚焦环上， 这些部件没有温控功能。 且在晶片边缘部分没有背冷气体。 这些因素都导致了工艺过程中晶片的温度 不均匀。
在刻蚀工艺中， 晶片温度的不均匀会造成刻蚀结果的不均匀， 刻蚀后 有些区域具有很高的刻蚀剖面角度， 而另一些区域刻蚀剖面角度则很差。 比 预定工艺参数低的温度会造成过多的聚合物沉积， 因为在低温下聚合物的沉 积系数更高， 这就在晶片的某些区域形成了较差的刻蚀剖面角度， 具有锥形 的侧壁。 这种刻蚀效应当是被尽量消除的， 而且， 这些聚合物沉积很难从晶 片上清除。
目前解决的方法有两种：
一种是， 让背冷气体在静电卡盘边缘部分泄漏， 以改善晶片边缘部分的 散热性能， 但是在这种方法中， 边缘部分泄漏的气体与晶片中心及其它部分 的气体是连通的， 因此泄漏的气体的量无法控制和计量， 且如果泄露的气体 量过大， 必然影响其它部分的背冷气体压强， 使晶片的温度难以控制。
另一种是， 在静电卡盘的侧面设计背冷气体泄漏孔， 但是该背冷气体 泄漏孔的作用主要是使得背冷气体的压强稳定， 因此那些背冷气体孔是与静 电卡盘表面连通的， 泄漏的量很小， 只是为了稳定背冷背冷气体压强， 不能 起到对晶片边缘部分的冷却作用。 发明内容 本发明的目的是提供一种结构简单、 使用方便的刻蚀设备的控温装置， 及应用该装置控制晶片温度的方法， 既可以改变晶片边缘部分的散热效果， 又可以有效控制晶片的温度。
本发明的目的是通过以下技术方案实现的：
本发明所述的控温装置， 设于静电卡盘处， 用于控制静电卡盘的温度， 静电卡盘上可放置晶片， 所述的静电卡盘上设有中心背冷气体通道和边缘背 冷气体通道， 且所述中心背冷气体通道与边缘背冷气体通道不连通； 所述中 心背冷气体通道和边缘背冷气体通道分别与气源连接。
所述的中心背冷气体通道与晶片接触的部分紧密接触且密封良好。
所述的边缘背冷气体通道的边缘与晶片接触的部分接触面稍粗糙， 背冷 气体可沿粗糙面部分泄漏。
所述的静电卡盘的边缘设有一个或多个背冷气体泄漏孔， 所述背冷气体 泄漏孔与边缘背冷气体通道连通。
所述控温装置被应用于刻蚀设备中。
所述的中心背冷气体通道与中心气路连接， 所述边缘背冷气体通道与边 缘气路连接； 所述中心气路上设有压强控制器， 所述边缘气路上设有盾量流 量控制器； 所述中心气路和边缘气路分别与气源连接。
所述的中心背冷气体通道与边缘背冷气体通道分別设有多组， 相互之间 互不连通； 所述中心气路和边缘气路分别设有一路或多路。
所述的气源有一个或多个。
所述的控温装置控制晶片温度的方法包括以下步骤：
A、 由气源向中心背冷气体通道和边缘背冷气体通道通入背冷气体， 并 使边缘背冷气体通道中的背冷气体部分泄漏； B、 通过控制中心背冷气体通道中背冷气体的压强控制晶片中部的温 度； 并通过控制边缘背冷气体通道中背冷气体的流量控制晶片边缘部分的温 度。
所述的步棘 A中：
边缘背冷气体通道中的背冷气体通过静电卡盘边缘处的粗糙面或背冷气 体泄漏孔部分泄漏；
所述步骤 B中：
通过中心气路上设有的压强控制器控制中心背冷气体通道中背冷气体的 压强； 并通过边缘气路上设有的质量流量控制器控制边缘背冷气体通道中背 冷气体的流量。
所述的背冷气体为氦气。
所述晶片放置于刻蚀设备中的静电卡盘上。 由上述本发明提供的技术方案可以看出， 本发明所述的刻蚀设备的控温 装置， 由于静电卡盘上设有互不不连通的中心背冷气体通道和边缘背冷气体 通道， 中心背冷气体通道与晶片接触的部分紧密接触且密封良好； 边缘背冷 气体通道的边缘与晶片接触的部分接触面稍粗糙， 或在静电卡盘的边缘设有 一个或多个背冷气体泄漏孔， 边缘背冷气体通道中的背冷气体可沿粗糙面或 泄漏孔部分泄漏。
既可以通过控制中心背冷气体通道中背冷气体的压强控制晶片中部的温 度； 又可以通过控制边缘背冷气体通道中背冷气体的流量， 改善晶片边缘散 热效果， 控制晶片边缘部分的温度。
又由于中心气路上设有压强控制器， 边缘气路上设有质量流量控制器， 可以很方便的实现对中心背冷气体通道中背冷气体的压强控制 , 和对边缘背 冷气体通道中背冷气体的流量控制。
结构筒单、 使用方便， 既可以改变晶片边缘部分的散热效果， 又可以有 效控制晶片的温度。 本发明主要适用于半导体生产工艺中的控温系统， 也适 用于其它场合的控温。 附图说明 图 1为现有技术一刻蚀设备的控温装置的结构示意图；
图 2为现有技术二刻蚀设备的控温装置的结构示意图；
图 3为本发明刻蚀设备的控温装置具体实施例一的结构间图；
图 4为本发明刻蚀设备的控温装置具体实施例二的结构间图。 具体实施方式 本发明较佳的具体实施方式如图 3所示， 设于刻蚀设备的静电卡盘 5处， 用于控制静电卡盘 5的温度， 静电卡盘 5上可放置晶片 1 , 静电卡盘 5上设有中 心背冷气体通道 2和边缘背冷气体通道 4 , 中心背冷气体通道 2与边缘背冷气 体通道 4不连通。 中心背冷气体通道 2和边缘背冷气体通道 4分別与气源 10连 接。
中心背冷气体通遺 2与晶片 1接触的部分紧密接触且密封良好。 有利于控 制中心背冷气体通道 2中背冷气体的压强， 以控制晶片 1的温度。
由于晶片 1边缘部位的散热效果较差， 因此， 边缘背冷气体通道 4中的背 冷气体需要有一定的泄漏， 以改良晶片 1边缘部位的散热效果。
为此， 本发明采用的较佳的具体实施方式一， 如图 3所示：
在静电卡盘 5的边缘设有一个或多个背冷气体泄漏孔 11 , 背冷气体泄漏 孔 11与边缘背冷气体通道 4连通， 背冷气体可沿边缘背冷气体通道 4部分泄 漏。
本发明采用的较佳的具体实施方式一， 如图 4所示：
在静电卡盘 5的边缘， 具体在边缘背冷气体通道 4的边缘与晶片 1接触的 部分接触面 3稍粗糙， 背冷气体可沿粗糙面 3部分泄漏。
中心背冷气体通道 2与中心气路 9连接， 边缘背冷气体通道 4与边缘气路 7 连接。 中心气路 9上设有压强控制器 8, 边缘气路 7上设有质量流量控制器 6。 中心气路 9和边缘气路 7分别与气源 10连接。 通过压强控制器 8控制中心背冷气体通道 2中背冷气体的压强， 用以控制 晶片 1的温度。
并通过质量流量控制器 6控制边缘背冷气体通道 4中背冷气体的流量， 用 以改良晶片 1边缘部位的散热效果。
所述的中心背冷气体通道 2与边缘背冷气体通道 4可以分别设有多组， 相 互之间互不连通。
多组中心背冷气体通道 2可以由一路中心气路 9统一供气， 也可以有多路 中心气路 9分别供气。
多组边缘背冷气体通道 4可以由一路边缘气路 7统一供气， 也可以有多路 边缘气路 7分别供气。
所用的气源 10有一个集中供气， 也可以有两个或多个分别给中心背冷气 体通道 2和边缘背冷气体通道 4供气。
本发明利用上述刻蚀设备的控温装置控制晶片温度的方法， 包括以下步 驟：
步骤 1、 由气源向中心背冷气体通道和边缘背冷气体通道通入背冷气体， 并使边缘背冷气体通道中的背冷气体部分泄漏；
步驟 2、 通过控制中心背冷气体通道中背冷气体的压强控制晶片中部的温 度； 并通过控制边缘背冷气体通道中背冷气体的流量控制晶片边缘部分的温 度。
在步厥 1中： 边缘背冷气体通道中的背冷气体通过静电卡盘边缘处的粗糙 面或背冷气体泄漏孔部分泄漏；
在步 -骤2中： 通过中心气路上设有的压强控制器控制中心背冷气体通道中 背冷气体的压强； 并通过边缘气路上设有的质量流量控制器控制边缘背冷气 体通道中背冷气体的流量。
在整个控制过程中， 由于中心背冷气体通道 2与边缘背冷气体通道 4不连 通， 既可以使边缘背冷气体通道中的背冷气体部分泄漏， 达到改善晶片边缘 散热效果的问题； 又不影响中心背冷气体通道中背冷气体的压强， 有利于控 制晶片的温度。 系统中所用的背冷气体为氦气、 氮气或其它气体。
以上所述， 仅为本发明较佳的具体实施方式， 但本发明的保护范围并不 局限于此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可 轻易想到的变化或替换， 都应涵盖在本发明的保护范围之内。

Claims

权 利 要 求 书
1、 一种控温装置， 设于静电卡盘处， 用于控制静电卡盘的温度， 静电 卡盘上可放置晶片， 其特征在于， 所述的静电卡盘上设有中心背冷气体通道 和边缘背冷气体通道， 且所述中心背冷气体通道与边缘背冷气体通道不连 通； 所述中心背冷气体通道和边缘背冷气体通道分别与气源连接。
2、 根据权利要求 1所述的控温装置， 其特征在于， 所述的中心背冷气体 通道与晶片接触的部分紧密接触且密封良好。
3、 根据权利要求 2所述的控温装置， 其特征在于， 所述的边缘背冷气体 通道的边缘与晶片接触的部分接触面稍粗糙， 背冷气体可沿粗糙面部分泄 漏。
4、 根据权利要求 2所述的控温装置， 其特征在于， 所述的静电卡盘的边 缘设有一个或多个背冷气体泄漏孔， 所述背冷气体泄漏孔与边缘背冷气体通 道连通。
5、 根据权利要求 1所述的控温装置， 其特征在于， 所述控温装置被应用 于刻蚀设备中。
6、 根据'权利要求 1 - 5中任一项所述的控温装置， 其特征在于， 所述的 中心背冷气体通道与中心气路连接， 所述边缘背冷气体通道与边缘气路连 接； 所述中心气路上设有压强控制器， 所迷边缘气路上设有质量流量控制 器； 所述中心气路和边缘气路分别与气源连接。
7、 根据权利要求 6所述的控温装置， 其特征在于， 所述的中心背冷气体 通道与边缘背冷气体通道分别设有多组， 相互之间互不连通； 所述中心气路 和边缘气路分别设有一路或多路。
8、 根据权利要求 7所述的控温装置， 其特征在于， 所述的气源有一个或 多个。
9、 一种利用控温装置控制晶片温度的方法， 其特征在于， 包括以下步 骤：
A、 由气源向中心背冷气体通道和边缘背冷气体通道通入背冷气体， 并 使边缘背冷气体通道中的背冷气体部分泄漏；
B、 通过控制中心背冷气体通道中背冷气体的压强控制晶片中部的温 度； 并通过控制边缘背冷气体通道中背冷气体的流量控制晶片边缘部分的温 度。
10、 居权利要求 9所述的控制晶片温度的方法， 其特征在于， 所述的 步骤 A中：
边缘背冷气体通道中的背冷气体通过静电卡盘边缘处的粗糙面或背冷气 体泄漏孔部分泄漏；
所述步骤 B中：
通过中心气路上设有的压强控制器控制中心背冷气体通道中背冷气体的 压强； 并通过边缘气路上设有的质量流量控制器控制边缘背冷气体通道中背 冷气体的流量。
11、 根据权利要求 9所述的控制晶片温度的方法， 其特征在于， 所述的 背冷气体为氦气。
12、 根据权利要求 9 - 11中任一项所述的控制晶片温度的方法， 其特征 在于， 所述晶片放置于刻蚀设备中的静电卡盘上。
PCT/CN2006/003175 2006-08-23 2006-11-27 Appareil de régulation de la température et procédé de régulation de la température d'une tranche WO2008028352A1 (fr)

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