KR20090033247A - 온도 제어 장치 및 웨이퍼 온도 제어 방법 - Google Patents

온도 제어 장치 및 웨이퍼 온도 제어 방법 Download PDF

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Publication number
KR20090033247A
KR20090033247A KR1020097001508A KR20097001508A KR20090033247A KR 20090033247 A KR20090033247 A KR 20090033247A KR 1020097001508 A KR1020097001508 A KR 1020097001508A KR 20097001508 A KR20097001508 A KR 20097001508A KR 20090033247 A KR20090033247 A KR 20090033247A
Authority
KR
South Korea
Prior art keywords
cooling gas
edge
rear cooling
gas passage
wafer
Prior art date
Application number
KR1020097001508A
Other languages
English (en)
Korean (ko)
Inventor
리지엔 리우
Original Assignee
베이징 엔엠씨 씨오., 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베이징 엔엠씨 씨오., 엘티디. filed Critical 베이징 엔엠씨 씨오., 엘티디.
Publication of KR20090033247A publication Critical patent/KR20090033247A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020097001508A 2006-08-23 2006-11-27 온도 제어 장치 및 웨이퍼 온도 제어 방법 KR20090033247A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2006101125688A CN100468619C (zh) 2006-08-23 2006-08-23 刻蚀设备的控温装置及其控制晶片温度的方法
CN200610112568.8 2006-08-23

Publications (1)

Publication Number Publication Date
KR20090033247A true KR20090033247A (ko) 2009-04-01

Family

ID=39129124

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001508A KR20090033247A (ko) 2006-08-23 2006-11-27 온도 제어 장치 및 웨이퍼 온도 제어 방법

Country Status (4)

Country Link
KR (1) KR20090033247A (zh)
CN (1) CN100468619C (zh)
TW (1) TW200908073A (zh)
WO (1) WO2008028352A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101507548B1 (ko) * 2014-01-17 2015-04-07 피에스케이 주식회사 지지 유닛 및 기판 처리 장치

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8960686B2 (en) * 2011-09-30 2015-02-24 Electro Scientific Industries, Inc. Controlled surface roughness in vacuum retention
CN103137517B (zh) * 2011-11-25 2016-08-03 中芯国际集成电路制造(北京)有限公司 用于处理晶圆的反应装置、静电吸盘和晶圆温度控制方法
US9916998B2 (en) * 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
CN104134624B (zh) * 2013-05-02 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 托盘及等离子体加工设备
CN104241184B (zh) * 2013-06-19 2017-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 承载装置及等离子体加工设备
CN104377105B (zh) * 2013-08-15 2017-02-08 中微半导体设备(上海)有限公司 等离子体处理装置及氦气管
CN104746008B (zh) * 2013-12-30 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 去气腔室
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
CN107768300B (zh) * 2016-08-16 2021-09-17 北京北方华创微电子装备有限公司 卡盘、反应腔室及半导体加工设备
CN106373916A (zh) * 2016-10-24 2017-02-01 上海华力微电子有限公司 电镀机台对准模块及其晶圆吸盘
CN111834247B (zh) * 2019-04-23 2023-09-08 北京北方华创微电子装备有限公司 冷却装置和半导体处理设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883778A (en) * 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
US5748435A (en) * 1996-12-30 1998-05-05 Applied Materials, Inc. Apparatus for controlling backside gas pressure beneath a semiconductor wafer
JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
KR100541447B1 (ko) * 2003-07-23 2006-01-11 삼성전자주식회사 웨이퍼용 정전척

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101507548B1 (ko) * 2014-01-17 2015-04-07 피에스케이 주식회사 지지 유닛 및 기판 처리 장치
US10109466B2 (en) 2014-01-17 2018-10-23 Psk Inc. Support unit and apparatus for treating substrate

Also Published As

Publication number Publication date
WO2008028352A1 (fr) 2008-03-13
CN101131917A (zh) 2008-02-27
TW200908073A (en) 2009-02-16
CN100468619C (zh) 2009-03-11
TWI340988B (zh) 2011-04-21

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E601 Decision to refuse application