WO2008018137A1 - Dispositif optique et procédé de fabrication de dispositif optique - Google Patents

Dispositif optique et procédé de fabrication de dispositif optique Download PDF

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Publication number
WO2008018137A1
WO2008018137A1 PCT/JP2006/315848 JP2006315848W WO2008018137A1 WO 2008018137 A1 WO2008018137 A1 WO 2008018137A1 JP 2006315848 W JP2006315848 W JP 2006315848W WO 2008018137 A1 WO2008018137 A1 WO 2008018137A1
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WO
WIPO (PCT)
Prior art keywords
layer
light emitting
optical device
organic
upper electrode
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Application number
PCT/JP2006/315848
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English (en)
Japanese (ja)
Inventor
Michio Menda
Ryuichi Satoh
Masashi Fukuzaki
Original Assignee
Pioneer Corporation
Tohoku Pioneer Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corporation, Tohoku Pioneer Corporation filed Critical Pioneer Corporation
Priority to PCT/JP2006/315848 priority Critical patent/WO2008018137A1/fr
Priority to JP2008528696A priority patent/JP4652451B2/ja
Publication of WO2008018137A1 publication Critical patent/WO2008018137A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations

Definitions

  • the present invention relates to an optical device and a method for manufacturing an optical device.
  • Optical devices are, for example, cell phones, in-vehicle monitors, home appliance monitors, personal computer display devices, information display devices that perform dot matrix display such as television receivers, watches, and advertisements. It is used in various devices such as fixed display devices such as panels, lighting devices such as light sources for scanners and printers, lighting, and liquid crystal backlights, and optical communication devices that use photoelectric conversion functions.
  • This optical device is generally formed by a plurality of pixels, and displays desired information by performing display driving or non-display driving for each pixel.
  • a pixel that employs a self-luminous element is known as a pixel forming the optical device.
  • Self-emitting elements have the advantage of low power and no need for a backlight.
  • organic EL elements As typical self-luminous elements, inorganic EL elements, organic EL (electric aperture luminescence) elements, FED (Field Emission Display) elements, light emitting diodes, and the like are known.
  • the organic EL element is also called, for example, an organic EL (OEL) device, an organic light emitting diode (OLED) device, a self-emitting element, or an electroluminescent light source.
  • OEL organic EL
  • OLED organic light emitting diode
  • an organic EL element has a structure in which an organic layer (light emitting layer) is sandwiched between an anode (corresponding to an anode and a hole injection electrode) and a force sword (corresponding to a cathode and an electron injection layer).
  • the organic layer has a structure in which a plurality of functional layers are laminated, for example, a structure in which a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and the like are sequentially laminated.
  • Each layer consists of a single layer that also has a single organic material force, a mixed layer that combines multiple materials, and a polymer binder.
  • a layer in which a functional material such as an organic material or an inorganic material (charge transport function, light emission function, charge blocking function, optical function, etc.) is dispersed can be employed.
  • each layer has a buffer function so that the organic layer is not damaged when the upper electrode is formed by sputtering, or an organic EL element that has a flattening function to prevent unevenness due to the film formation process. Is also known.
  • the organic EL element having the above-described configuration, by applying a voltage to both electrodes, holes injected and transported from the anode into the organic layer and electrons injected and transported from the force sword into the organic layer are generated. Recombination occurs in the organic layer, and due to this recombination, the electronic state of organic molecules in the organic layer changes from the ground state to the excited state, and light is emitted when the excited state changes to the ground state.
  • FIG. 1 is a cross-sectional view showing an optical device provided with a general organic EL (electric mouth luminescence) element.
  • FIG. 2 is a front view for explaining the deterioration of the organic EL element of the optical device.
  • a general optical device 1J uses an organic EL element as one pixel 11.
  • the optical device 1J shown in FIG. 1 is a bottom emission type, and a first electrode (also called a lower electrode) made of a transparent conductive material such as ITO (Indium Tin Oxide) on a glass substrate 2J.
  • Organic light-emitting functional layer (may be plural or singular) 3J is deposited 'and a light emitting layer is formed on top of it. 5J is deposited, and a second electrode (such as A1) is formed on top of it. 6J is filmed 'patterning.
  • a lead wire 3a is formed at the end of the first electrode 3J.
  • the organic EL element 100 is manufactured on the substrate 2J by the above manufacturing process.
  • As the substrate 2J for example, an active drive substrate using TFT (Thin Film Transistor) or the like, or a passive drive substrate on which stripe electrodes are formed can be employed.
  • TFT Thin Film Transistor
  • the organic EL element 100 is sealed and bonded by a sealing substrate 91J such as glass.
  • a sealing substrate 91J such as glass.
  • Various methods such as hermetic sealing, membrane sealing, and solid sealing are known as sealing and joining methods for the optical device 1J.
  • the element-side substrate 2J and the sealing substrate 91 are sealed through an adhesive 92J such as epoxy resin. At this time, apply adhesive 92J to the entire surface on which the organic EL element is formed. And seal.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2005-63928
  • Such an intrusion phenomenon of the deterioration factor (hi) deteriorates the organic EL element 100 in the manufacturing process of the optical device 1J using the organic EL element 100 as one pixel.
  • the deterioration factor (hi) enters the interface 56J between the layers, for example as shown in FIGS.
  • a non-light-emitting portion is generated in the peripheral portion of the pixel 11
  • the width (w) of the non-light-emitting portion gradually increases, and the light-emitting defective portion of the optical device 1J is enlarged.
  • An object of the present invention is to deal with such a problem. That is, in an optical device having a self-luminous element in which an organic light emitting functional layer including a light emitting layer is sandwiched between a lower electrode and an upper electrode, water, oxygen, organic gas, etc. are present at the interface between the upper electrode and the organic light emitting functional layer. It is an object of the present invention to reduce light emitting defects caused by the intrusion of deterioration factors, and to reduce display defects of optical devices due to light emitting defects of self-luminous elements such as organic EL elements.
  • one of the objects is to solve the above-mentioned problems!
  • a single light-emitting element in which an organic light-emitting functional layer including a light-emitting layer is sandwiched between a lower electrode and an upper electrode is used as one pixel, and one or a plurality of the pixels are formed on a substrate.
  • An optical device formed directly or via another layer, the organic material layer formed on the upper electrode of the self-luminous element, the lower electrode and the upper electrode,
  • the organic material layer has an inorganic layer formed on the organic material layer, and a sealing portion that seals the light-emitting element formed on the substrate with a sealing material.
  • the end of the region where the layer and the inorganic layer overlap is separated from the end of the region where the organic light emitting functional layer and the upper electrode overlap from the end of the sealing portion via the organic material layer. It is characterized by being formed.
  • the invention according to claim 12 is an optical device using an organic EL element having at least a light emitting layer sandwiched between a pair of electrodes as one pixel, and directly or indirectly on the substrate and the substrate.
  • a first insulating film patterned on the substrate and Z or the lower electrode to form a pixel region, and a light emitting layer formed in the pixel region by the first insulating film.
  • the invention according to claim 13 is characterized in that a single light-emitting element in which an organic light-emitting functional layer including at least a light-emitting layer is sandwiched between a pair of electrodes is used as one pixel, and one or a plurality of the pixels are formed.
  • a method for manufacturing an optical device comprising: forming a lower electrode directly on a substrate or via another layer; and forming the organic light emitting functional layer including the light emitting layer on the lower electrode.
  • the end of the region where the organic material layer and the inorganic layer overlap is sealed from the end of the region where the organic light emitting functional layer and the upper electrode overlap.
  • the invention according to claim 16 is characterized in that a single light-emitting element in which an organic light-emitting functional layer including at least a light-emitting layer is sandwiched between a pair of electrodes is used as one pixel, and one or a plurality of the pixels are formed.
  • a method of manufacturing an optical device comprising: a lower electrode forming step of forming a lower electrode directly on a substrate or via another layer; and a pattern of a first insulating film on the substrate and Z or the lower electrode.
  • FIG. 1 is a cross-sectional view showing an optical device including a general organic EL (electrical mouth luminescence) element.
  • FIG. 2 is a front view for explaining the deterioration of the organic EL element of the optical device.
  • FIG. 3 is a cross-sectional view for explaining the optical device 1 according to the first embodiment of the present invention.
  • FIG. 4 is a diagram showing a specific example of a temporal change in the width of a non-light emitting portion generated at an end portion of a pixel for explaining the effect of the optical device according to the present invention.
  • FIG. 5 is a diagram for explaining the effect of the optical device according to the first example of the present invention.
  • FIG. 6 is a diagram for explaining the effect of the optical device according to the second embodiment of the present invention.
  • FIG. 7 is a cross-sectional view for explaining an optical device according to a second embodiment of the present invention.
  • FIG. 8 is a diagram for explaining an optical device 1 according to a third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view around the region A shown in (A).
  • FIG. 9 is a view for explaining a lower electrode forming step of the optical device manufacturing method according to the third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view in the vicinity of the region A shown in (A).
  • FIG. 10 is a view for explaining a pixel region forming step (first insulating film forming step) of the method for manufacturing an optical device 1 according to the third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view in the vicinity of the region A shown in (A).
  • FIG. 11 is a view for explaining a first charge transport layer forming step of the optical device manufacturing method according to the third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view near the region A shown in (A).
  • FIG. 12 is a view for explaining a light emitting layer forming step of the optical device manufacturing method according to the third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view in the vicinity of the region A shown in (A).
  • FIG. 13 is a view for explaining a second charge transport layer forming step of the method for manufacturing an optical device according to the third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view near the region A shown in (A).
  • FIG. 14 is a view for explaining an upper electrode forming step of the optical device manufacturing method according to the third embodiment of the invention.
  • (A) is a top view
  • (B) is a cross-sectional view near the region A shown in (A).
  • FIG. 15 is a view for explaining an organic material layer forming step of the optical device manufacturing method according to the third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view in the vicinity of region A shown in (A).
  • FIG. 16 is a diagram for explaining an inorganic layer forming step of the optical device manufacturing method according to the third embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view in the vicinity of the region A shown in (A).
  • FIG. 17 is a cross-sectional view for explaining an optical device 1B according to a fourth embodiment of the present invention.
  • FIG. 18 is a diagram for explaining an optical device 1C according to a fifth embodiment of the present invention.
  • (A) is a top view
  • (B) is a cross-sectional view around the region A shown in (A).
  • An optical device includes a self-luminous element in which an organic light-emitting functional layer including a light-emitting layer is sandwiched between a lower electrode and an upper electrode as one pixel, one or a plurality of pixels, a substrate
  • An optical device formed directly on or through another layer The organic material layer formed on the upper electrode of the optical element, the inorganic layer formed on the organic material layer in a state in which insulation between the lower electrode and the upper electrode is ensured, and the self-light emission formed on the substrate
  • a sealing portion that seals the element with a sealing material, and the end of the region where the organic material layer and the inorganic layer overlap is located outside the pixel from the end of the region where the organic light emitting functional layer and the upper electrode overlap.
  • it is characterized in that it is formed on the outer end portion side of the sealing portion, with an organic material layer interposed therebetween.
  • the organic material layer includes at least one organic material constituting the organic light emitting functional layer.
  • the inorganic layer is made of the same material as that of the upper electrode.
  • an organic material layer is formed on a self-luminous element in which an organic light emitting functional layer is sandwiched between a lower electrode and an upper electrode, and an inorganic layer is formed on the organic material layer. Therefore, for example, deterioration factors such as an uncured component of the adhesive, a solvent, water and oxygen from the external atmosphere, and the like enter the interface between the upper electrode and the organic light emitting functional layer can be reduced.
  • the degradation factor is preferentially captured at the edge force interface between the organic material layer and the inorganic layer, so that the degradation factor is interfaced between the upper electrode and the organic light emitting functional layer. It is possible to reduce the amount of intrusion.
  • the optical device has a structure in which, for example, the end portion of the interface between the organic light emitting functional layer and the upper electrode is in contact with the organic material layer, and therefore, a degradation factor to the interface between the organic light emitting functional layer and the upper electrode Intrusion can be reduced.
  • the optical device since the optical device has a structure in which, for example, the end portion of the interface between the organic light emitting functional layer and the upper electrode is in contact with the first insulating film, the degradation factor enters the interface between the organic light emitting functional layer and the upper electrode. Can be reduced.
  • the organic material layer contains at least one organic material constituting the organic light emitting functional layer, for example, the organic material prepared at the time of forming the organic light emitting layer without preparing a new organic material at the time of forming the organic material layer.
  • An organic material layer can be easily formed using a material.
  • the optical device uses an organic material layer for the edge of the interface between the organic light emitting functional layer and the upper electrode.
  • the inorganic layer having a relatively high thermal conductivity is provided on the self-luminous element, there is an effect of radiating heat generated when the optical device performs display driving.
  • the organic material layer and the inorganic layer are sequentially formed on the upper electrode. Can be prevented from expanding.
  • the method for manufacturing an optical device includes a self-luminous element in which an organic light-emitting functional layer including at least a light-emitting layer is sandwiched between a pair of electrodes as one pixel.
  • a method of manufacturing an optical device in which one or a plurality of optical devices are formed, wherein a lower electrode is formed on a substrate directly or via another layer, and an organic light emitting device including a light emitting layer on the lower electrode.
  • the end of the region where the organic material layer and the inorganic layer overlap is placed closer to the outer end of the sealing portion than the end of the region where the organic light emitting functional layer and the upper electrode overlap. It is characterized in that they are formed apart via each other.
  • an optical device having the above configuration can be easily manufactured.
  • the organic light emitting functional layer, the upper electrode, the organic material layer, and the inorganic layer are formed by a vacuum deposition method, for example, a sputtering method.
  • a vacuum deposition method for example, a sputtering method.
  • the optical device is directly or directly on the substrate.
  • the lower electrode formation process that forms the lower electrode through another layer, and the organic light emitting functional layer formation that forms the organic light emitting functional layer that functions as a pixel by light emission and Z or non-light emission on the lower electrode by vacuum deposition A step of forming an upper electrode by vacuum deposition so that a part of a region where the organic light emitting functional layer is formed is exposed on the organic light emitting functional layer; and the organic light emitting functional layer is exposed.
  • An organic material layer forming step of forming an organic material layer containing at least one material constituting the organic light emitting functional layer in a region where the organic light emitting functional layer is exposed by vacuum deposition; and an upper surface of the organic material layer and the exposed region In this range, the inorganic layer forming step of forming the inorganic layer by vacuum vapor deposition is included, so that the optical device having the above configuration according to the present invention can be easily produced.
  • FIG. 3 is a cross-sectional view for explaining the optical device 1 according to the first embodiment of the present invention.
  • the optical device 1 according to the first embodiment of the present invention has one pixel 11 or a plurality of pixels 11.
  • a plurality of pixels 11 are formed on the substrate 2 in a grid pattern.
  • the formation region of the pixel 11 corresponds to an embodiment of the pixel region according to the present invention.
  • the self-luminous element 100 corresponding to one pixel displays various information by light emission Z non-light emission of the light emitting layer formed between the electrodes.
  • an organic EL (electric mouth luminescence) element can be adopted.
  • the optical device 1 for example, an active matrix driving type or a passive matrix driving type is adopted. be able to.
  • an example of a bottom emission type passive matrix drive organic EL panel employing an optical device according to an embodiment of the present invention will be described in detail.
  • the optical device 1 includes a substrate 2, a lower electrode (first electrode) 3, an organic light emitting functional layer 5 including a light emitting layer, and an upper electrode (second electrode) 6.
  • the substrate 2 corresponds to one embodiment of the substrate according to the present invention
  • the lower electrode 3 corresponds to one embodiment of the lower electrode according to the present invention
  • the organic light emitting functional layer 5 corresponds to the organic light emitting according to the present invention. This corresponds to an embodiment of the functional layer.
  • the upper electrode 6 corresponds to an embodiment of the upper electrode according to the present invention
  • the organic material layer 7 corresponds to an embodiment of the organic material layer according to the present invention.
  • the inorganic layer 8 corresponds to one embodiment of the inorganic layer according to the present invention
  • the sealing member 9 corresponds to one embodiment of the sealing portion according to the present invention.
  • the material for which the substrate 2 is preferably a flat plate or a film, for example, glass or plastic can be used.
  • the substrate 2 is formed from a transparent material.
  • the lower electrode (first electrode) 3 is made of a conductive material, and is formed on the substrate 2 directly or via another layer (for example, a moisture-impermeable layer).
  • a material for forming the lower electrode 3 for example, a transparent conductive material such as ITO is adopted.
  • the organic light emitting functional layer 5 including the light emitting layer is formed on the lower electrode 3 directly or via another layer (for example, a charge transport layer).
  • the organic light emitting functional layer 5 has a laminated structure such as a charge transport layer and a light emitting layer (also referred to as a light emitting layer).
  • the organic light emitting functional layer 5 is formed by, for example, a vacuum evaporation method. Alternatively, it may be formed by a coating, printing method or laser transfer method.
  • the upper electrode (second electrode) 6 is made of a conductive material and is formed on the organic light emitting functional layer 5. Specifically, as shown in FIG. 3, the upper electrode 6 is formed in a narrow range on the organic light emitting functional layer 5 so that the end 6a is located on the inner side of the end 5 of the organic light emitting functional layer 5. ing. Specifically, as shown in FIG. 3, the upper electrode 6 is formed by vacuum deposition of the second electrode so that a part of the region where the organic light emitting functional layer 5 is formed is exposed.
  • the self-light emitting element 100 is formed by the lower electrode 3, the organic light emitting functional layer 5, and the upper electrode 6. Since the self-luminous element 100 is significantly deteriorated by deterioration factors such as moisture, the sealing member 9 Thus, the self-luminous element 100 is sealed to prevent deterioration of the element.
  • the organic material layer 7 and the inorganic layer 8 are formed on the upper electrode 6, and a sealing material 92 such as an adhesive is applied thereon to seal the sealing substrate 91. Thus, the self-luminous element 100 is sealed.
  • the light emitting layer of the organic light emitting functional layer 5 is substantially effective. It corresponds to the light emitting area.
  • the organic material layer 7 is formed on the upper electrode 6 on the organic EL element 100 as shown in FIG. Specifically, the organic material layer 7 is formed on the upper electrode 6 in a range wider than the film formation region of the upper electrode 6, and the organic light emitting functional layer 5 and the interface 57 are formed.
  • the organic material layer 7 preferably includes at least one material constituting the organic light emitting functional layer 5, for example.
  • Various organic materials can be used as the material of the organic material layer 7 depending on the external environment of the optical device 1 and the driving conditions.
  • an aluminum complex Alq or copper phthalocyanine (CuPc) can be used as the organic material layer 7.
  • the inorganic layer 8 is formed on the organic material layer in a state in which insulation from the lower electrode and the upper electrode is ensured.
  • the inorganic layer 8 is formed by vacuum deposition of a conductive layer containing a conductive material, for example, in a range on the upper surface of the organic material layer 7 and the exposed region.
  • This inorganic layer 8 is electrically insulated from, for example, an external circuit that drives and controls the organic EL element when the conductive material is formed by vacuum deposition.
  • Various materials can be adopted as the material for forming the inorganic layer 8 depending on the external conditions, driving conditions, and the like of the optical device 1.
  • the inorganic layer 8 can employ various metals such as aluminum and conductive materials such as metal oxides.
  • the inorganic layer 8 is preferably made of the same material as the upper electrode 6.
  • the inorganic layer 8 is formed in a range narrower than the region where the organic material layer 7 is formed, and is formed in a range wider than the region where the upper electrode 6 is formed.
  • the inorganic layer 8 is formed by vacuum deposition.
  • the organic light emitting functional layer 5, the upper electrode 6, the organic material layer 7, and the inorganic layer 8 are formed by a vacuum deposition method, thereby simplifying the manufacturing process. .
  • the sealing member 9 seals the organic EL element 100 formed on the substrate 2 with a sealing material.
  • Various methods such as hermetic sealing, membrane sealing, and solid sealing can be employed as the sealing and joining method of the optical device 1J. In this embodiment, as shown in FIG.
  • sealing between an element-side substrate 2 and a sealing substrate 91 made of various materials such as glass and metal materials is performed using an adhesive such as epoxy resin. Seal through material 92. At this time, an adhesive is applied and sealed on the entire surface on which the organic EL element is formed. Further, a sealing substrate 91 having a recess at a position corresponding to the organic EL element is bonded and sealed to the substrate 2 with an adhesive. At this time, film sealing may be performed using a sealing material 92 that can form a drying member in the recess as a sealing film. That is, the sealing material 92 corresponds to an embodiment of the sealing portion according to the present invention.
  • the end portion 8a of the region where the organic material layer 7 and the inorganic layer 8 overlap (interface between the organic material layer 7 and the inorganic layer 8) 78 has the organic light emitting functional layer 5 and the upper electrode 6 Area (interface between the organic light emitting functional layer 5 and the upper electrode 6) is formed on the outer end portion 901a side of the sealing portion 9 from the end portion 6a of the 56, with the organic material layer 7 interposed therebetween. Yes.
  • the end portion 6 a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is covered with the organic material layer 7.
  • this trapping part utilizes the characteristics that the deterioration factor easily enters the interface between the organic material layer 7 and the inorganic layer 8, for example.
  • the self-light-emitting element 100 of the optical device 1 having the above-described configuration is such that electrons are applied from the cathode side formed on one of the lower electrode 3 and the upper electrode 6 by applying a voltage between the lower electrode 3 and the upper electrode 6. Then, holes are injected from the anode side formed on the other of the lower electrode 3 and the upper electrode 6, and they are recombined in the light emitting layer 52. By this recombination, organic molecules in the light emitting layer 52 are injected. Emits light when its electronic state transitions from the ground state to the excited state and from the excited state to the ground state.
  • the organic material layer 7 is formed on the self-luminous element 100 in which the organic light emitting functional layer 5 is sandwiched between the lower electrode 3 and the upper electrode 6, and the organic material Since the inorganic layer 8 is formed on the layer 7, for example, an uncured component of the sealing member 92, a solvent, It is possible to reduce deterioration factors such as water and oxygen having an external atmosphere force from entering the interface 56 between the upper electrode 6 and the organic light emitting functional layer 5.
  • the degradation factor is captured at the interface 78 between the organic material layer 7 and the inorganic layer 8, and the degradation of the organic light emitting functional layer 5 due to the degradation factor can be reduced. it can .
  • the amount of degradation factors entering the interface 56 between the upper electrode 6 and the organic light emitting functional layer 5 can be reduced. That is, the light emission failure of the optical device 1 can be reduced.
  • the end portion 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is formed in a structure covered with, for example, an organic material layer 7 having a prescribed thickness. Further, it is possible to reduce the intrusion of deterioration factors into the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6.
  • the optical device 1 having the above configuration includes the inorganic layer 8 having a relatively high thermal conductivity via the organic material layer 7 on the self-luminous element 100, so that the optical device 1 is driven to emit light. It has the effect of dissipating the generated heat.
  • the organic material layer 7 and the inorganic layer 8 are sequentially formed on the upper electrode 6, so that the defect is eliminated. It is possible to prevent the expansion of dark spots as a factor.
  • FIG. 4 is a diagram showing a specific example of the change over time of the width of the non-light-emitting portion generated at the end portion of the pixel, for explaining the effect of the optical device according to the present invention.
  • the vertical axis represents the width (w) of the non-light-emitting portion generated at the end of the pixel 11
  • the horizontal axis represents the storage time (t) in a high-temperature and high-humidity environment.
  • the progress of the non-light emitting portion is not observed before a predetermined time (tl).
  • a predetermined time (tl) an increase in the non-light-emitting portion is observed at a constant rate (evaluated by the width (w) of the non-light-emitting portion).
  • the deterioration factor that has entered the adhesive 92J from the outer end 901a of the sealing portion 9 takes the organic light emitting functional layer 5J and the upper electrode over a predetermined time (tl). It is thought that it reached the interface 56J of 6J and entered further.
  • the optical device 1 according to the present invention shown in FIG. 3 for example, as shown in the graph P1 shown in FIG. Time (t 1) The progress of the non-emission part is not observed after (within the observation time). For example, as shown in FIG. 3, this is considered to be an effect obtained by capturing a deterioration factor at the interface 78 between the organic material layer 7 and the inorganic layer 8 of the optical device 1 according to the present invention.
  • the end portion 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is covered with an organic material layer 7 having a predetermined thickness, Since the material layer 7 has a structure formed on the organic light emitting functional layer 5, the organic EL element 100 has an effect of further reducing intrusion into the deterioration factor.
  • An anode made of ITO is formed as a lower electrode 3 on a glass substrate 2, and an organic light emitting functional layer 5 made of a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer is formed thereon. And an organic EL element 100 in which a cathode made of A1 is formed as the upper electrode 7 thereon.
  • LiF lithium fluoride
  • A1 aluminum
  • the organic material layer 7 is formed by vacuum vapor deposition
  • a film is formed so as to cover the interface 56 between the electroluminescent functional layer 5 and the upper electrode 6.
  • A1 of the same material as the upper electrode 6 was formed as an inorganic layer 8 on the organic material layer 7 by lOOnm.
  • the inorganic layer 8 is formed by vacuum deposition, and the end 8a of the interface 78 between the organic material layer 7 and the inorganic layer 8 is located outside the sealing portion more than the end 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6.
  • the film is formed so as to be formed on the end 90 la side.
  • the prepared organic EL device is sealed with epoxy resin 9
  • the glass sealing substrate 91 and the substrate 2 were sealed so as not to form a space, and the optical device according to the first example was completed.
  • an optical device according to the second example was fabricated.
  • the description of the same configuration as that of the optical device according to the first embodiment is omitted.
  • the organic material layer 7 was fabricated in the same manner as the optical device fabricated in the previous example 1, except that 60 nm of CuPc, which is the same material as the hole injection layer, which is one of the organic light emitting functions, was formed. did.
  • the element was sealed without forming the organic material layer 7 and the inorganic layer 8, and an optical device according to a comparative example was produced. Since other configurations are the same as those of the first and second embodiments, the description thereof is omitted.
  • FIG. 5 and FIG. 6 are diagrams for explaining the effect of the optical device according to the example of the present invention.
  • FIG. 5 shows that the optical device according to the first embodiment of the present invention and the optical device according to the comparative example are stored in a high-temperature and high-humidity environment at a temperature of 60 ° C. and a humidity of 90%.
  • FIG. 6 is a diagram showing the width (w) (vertical unit; zm) of a non-light-emitting portion generated at the end of the pixel 11 with respect to the elapsed time t (horizontal unit time (h)) as shown in FIG.
  • FIG. 6 shows a similar experiment in which the optical device according to the second embodiment of the present invention and the optical device according to the comparative example were stored in a high-temperature and high-humidity environment at a temperature of 60 ° C. and a humidity of 90%. It is a figure which shows the result of having performed.
  • the progress of the non-light-emitting portion was not observed about 240 hours ago, and further, after about 240 hours had elapsed. However, the progress of the non-light emitting part was not observed (within the observation time).
  • the progress of the non-light-emitting portion was not observed about 240 hours ago, and after about 240 hours had passed. However, the progress of the non-light emitting part was not observed (within the observation time).
  • FIG. 7 is a cross-sectional view for explaining an optical device according to the second embodiment of the present invention. A description of the same configurations and functions as those in the above embodiment will be omitted.
  • a lower electrode 3 is patterned on an upper part of a substrate 2, and a pixel (region) is formed on the upper part by a first insulating film 4 such as SiO 2 or polyimide.
  • Area 11 is formed.
  • One or a plurality of the pixels 11 are formed, and a current flows in the organic light emitting functional layer 5 by applying a voltage to the lower electrode 3 and the upper electrode 6, whereby display Z non-display of the pixel 11 is selected.
  • the optical device displays the desired information by the display Z non-display of the pixel 11.
  • An organic light emitting functional layer 5 and an upper electrode 6 are formed on the pixel 11 and the first insulating film 4.
  • an interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is formed on the first insulating film 4 formed at the end of the pixel 11 closest to the outer end 901a.
  • a second insulating film 41 is formed so as to cover the self light emitting element.
  • a second insulating film 41 is formed on the upper electrode 6 so as to cover the interface 56.
  • the second insulating film 41 is formed so as to cover the entire region where the first insulating film 4 is formed.
  • the second insulating film 41 is made of MoO (acid molybdenum)
  • a metal oxide such as SnO (tin oxide) is formed by vacuum deposition.
  • the organic material layer 7 is formed in a range covering the interface 56 on the second insulating film 41, and the inorganic layer 8 is formed thereon.
  • the film is formed so that the end portion of the interface 78 between the organic material layer 7 and the inorganic layer 8 is formed closer to the outer end portion 901a side of the sealing portion 9 than the end portion of the interface 56 below the second insulating film 41.
  • the pixel region 11 is formed by the patterned first insulating film 4, the self-emitting element 100 is formed in the pixel region 11, and the organic light emitting functional layer 5 and the upper electrode are formed. Since the end portion of the interface 56 with 6 is formed on the first insulating film 4 and covered with the second insulating film 41, the organic light emitting functional layer 5 and It is possible to reduce deterioration factors from entering the interface 56 of the upper electrode 6.
  • FIG. 8 is a view for explaining an optical device 1 according to the third embodiment of the present invention.
  • 8A is a top view
  • FIG. 8B is a cross-sectional view in the vicinity of the region A shown in FIG. 8A.
  • a description of the same configurations and functions as those in the first embodiment is omitted.
  • a plurality of self-luminous elements (organic EL elements) 100 are formed on the substrate 2 in a substantially lattice shape.
  • the This optical device 1 has at least one pixel 11, in the present embodiment, a plurality of pixels 11 in a matrix form, and the organic EL element 100 forming this pixel is interposed between the lower electrode 3 and the upper electrode 6, An organic light emitting functional layer 5 including the light emitting layer 52 is sandwiched.
  • the optical device 1 according to the present embodiment emits light from each self-luminous element by an input signal from an external circuit such as a power supply circuit or a controller IC (Integrated circuit). Z Non-light emission is controlled.
  • the optical device 1 displays various kinds of information by the light emission Z non-light emission of each self-luminous element.
  • an organic EL panel using an organic EL element which is a self-luminous element will be described.
  • the optical device 1 includes a substrate 2, a lower electrode (first electrode) 3, a first insulating film 4, a light emitting functional layer 5, and an upper electrode (second electrode). 6. It has an organic material layer 7, an inorganic layer 8, and a sealing member 9.
  • the organic light emitting functional layer 5 includes a first charge transport layer 51, a light emitting layer 52, and a second charge transport layer 53.
  • a transparent electrode such as ITO is formed as a lower electrode 3 on a substrate 2 such as glass to form one pixel 11.
  • the opening of the first insulating film 4 such as 2 or polyimide is formed and patterned.
  • a first charge transport layer is formed of a hole transport layer such as NPD on the surface of the lower electrode 3 in the opening.
  • the first charge transport layer 51 is formed in the opening and above the first insulating film 4 forming the opening and to the top of the first insulating film 4 formed on the outermost part.
  • a light emitting layer 52 is formed on the first charge transport layer 51.
  • the light emitting material of the light emitting layer 52 may be appropriately selected according to the design items of the optical device, for example, single color display, full color display, dot matrix, icon display, and segment display.
  • DCM1 (disyanomethylene) 2-methyl 6- (4,1 dimethylaminostyryl) 4H-pyran) and other materials that emit red light, and blue light such as distyryl derivatives and triazole derivatives.
  • a material, a phosphorescent material using Ir (iridium) complex, or the like may be used.
  • a second charge transport layer 53 is formed on the light emitting layer 52.
  • the second charge transport layer 53 is made of various materials such as aluminum complex (Alq).
  • An electron transport layer is formed. Similar to the first charge transport layer 51, the light emitting layer 52 and the second charge transport layer 53 are formed up to the top of the first insulating film 4 forming the opening and the top of the first insulating film 4 formed on the outermost part. .
  • the upper electrode 6 is formed on the organic light emitting functional layer 5 including the first charge transport layer 51, the light emitting layer 52, and the second charge transport layer 53.
  • various metal materials such as A1 can be employed.
  • the upper electrode 6 is formed up to the upper part of the first insulating film 4 forming the opening and the upper part of the first insulating film 4 formed on the outermost part, but as shown in FIG. It is preferable that the light emitting functional layer 5 is formed in a film forming range narrower than the film forming range.
  • the organic material layer 7 is formed in a wider range than the film formation range of the upper electrode 6.
  • the organic material layer 7 is preferably selected from the same materials among the organic materials constituting the organic light emitting functional layer 5.
  • Alq which is a material for forming the second charge transport layer 53, has an aluminum (A1) force.
  • the film forming range of the organic material layer 7 is formed in a wider range than the upper electrode 6.
  • the organic light emitting functional layer 5 and the organic material layer 7 are formed so as to overlap each other outside the pixel from the end 6a of the upper electrode 6.
  • the degradation factor of the organic EL element 100 is reduced by eliminating the interface between the organic light emitting functional layer 5 and the organic material layer 7. Intrusion into the interface of the organic EL element 100 can be reduced, and the light emitting failure of the organic EL element 100 caused by the reduction can be reduced.
  • an inorganic layer 8 is formed on the organic material layer 7 with a conductive material.
  • This inorganic layer 8 is electrically insulated from the lower electrode 3 and the upper electrode 6 of the organic EL element 100, and an external circuit 85 (851 for driving the organic EL element 100 of the optical device 1). , 852), the first electrode side flexible substrate 801 (80) and the second electrode side flexible substrate 802 (80), electrical insulation is ensured.
  • the organic material layer 7 and the inorganic layer 8 are not involved in the light emitting Z non-light emission of the organic EL element 100.
  • a sealing substrate 91 is bonded to the upper portion of the inorganic layer 8 by a sealing material (adhesive) 92.
  • a sealing material for example, an organic resin such as a thermosetting resin or a photo-curing resin can be employed.
  • the sealing substrate 91 is preferably formed of a flat glass material, a metal substrate, a plastic material, or the like and having a function of blocking moisture.
  • the end of the region where the organic material layer 7 and the inorganic layer 8 overlap (the interface between the organic material layer 7 and the inorganic layer 8) 78 is the organic light emitting functional layer 5 and the upper electrode 6 Is formed on the outer end portion 901a side of the sealing portion 9 from the end portion 6a of the organic light emitting functional layer 5 and the upper electrode 6 through the organic material layer 7.
  • the manufacturing method of the optical device 1 according to the present embodiment includes, for example, a lower electrode forming step, a first insulating film forming step, an organic light emitting functional layer forming step (first transport layer forming step, light emitting layer forming step, second transport layer). Forming step), upper electrode forming step, organic material layer forming step, inorganic layer forming step, sealing step, and post-processing step.
  • a lower electrode forming step for manufacturing the optical device 1 according to the present embodiment includes, for example, a lower electrode forming step, a first insulating film forming step, an organic light emitting functional layer forming step (first transport layer forming step, light emitting layer forming step, second transport layer). Forming step), upper electrode forming step, organic material layer forming step, inorganic layer forming step, sealing step, and post-processing step.
  • FIG. 9 is a view for explaining a lower electrode forming step of the optical device manufacturing method according to the embodiment of the present invention.
  • 9A is a top view
  • FIG. 9B is a cross-sectional view in the vicinity of the region A shown in FIG. 9A.
  • a transparent electrode such as ITO or IZO (Indium Zinc Oxide) is used as a lower electrode (first electrode) 3 by various film forming methods such as a sputter film forming method to form a substantially constant film on the entire surface. Thick film is formed.
  • the lower electrode 3 is described as a hole injection electrode, but conversely, it may be formed as an electron injection electrode.
  • the lower electrode 3 which is a part of the organic EL element, the lower electrode bow I input wiring 3a and the upper electrode (second electrode) for inputting the light emission Z non-emission control signal of the organic EL element 100 from the external circuit ) Pattern I put out wiring 3b.
  • FIG. 10 is a view for explaining a pixel region forming step (first insulating film forming step) in the method for manufacturing the optical device 1 according to the embodiment of the present invention.
  • FIG. 10A is a top view
  • FIG. 10B is a cross-sectional view in the vicinity of the region A shown in FIG. 10A.
  • one organic EL device 100 is used as one pixel 11 for one organic EL display to display information.
  • An organic EL display having a plurality of pixels 11 is shown, and a light emitting region of the pixels 11 is formed in the opening of the first insulating film 4.
  • the first insulating film 4 is formed on the entire surface of the lower electrode patterning side of the substrate 2 with, for example, an organic material polyimide, an inorganic material silicon oxide, or the like.
  • a first insulating film material such as a polyimide precursor, novolac resin, silicon oxide or the like is formed on the entire surface of the first electrode formation side on the substrate 2 by a manufacturing method such as spin coating or sputtering. To do. Thereafter, as shown in FIGS. 10A and 10B, the first insulating film is patterned in a lattice pattern. More specifically, the first insulating film 4 is patterned in a plurality of stripes so as to form a lattice pattern between the lower electrode lines 3A and in a direction perpendicular to the lower electrode lines 3A. Patting with one. After patterning, a curing process is performed as necessary.
  • FIG. 10A and 10B the first insulating film material is patterned in a lattice pattern. More specifically, the first insulating film 4 is patterned in a plurality of stripes so as to form a lattice pattern between the lower electrode lines 3A and in a direction perpendicular to the lower electrode lines 3A. Patting
  • FIG. 10B shows that there are a plurality of first insulating films 4 at both ends of the lower electrode 3, the first insulating film 4 according to this embodiment is shown in FIG.
  • the first insulating film 4 formed by one film formation is patterned into a prescribed shape.
  • the first insulating film 4 may be formed by performing a plurality of film formation and patterning of an insulating material. It is only necessary to form the optical device 1 according to the present invention. Further, in the pixel region forming process (first insulating film forming process), the partition wall having an overhang for patterning the upper electrode 6 and the coating mask are not in contact with the organic light emitting functional layer 5. A mask support layer may be formed to do this.
  • FIG. 11 is a diagram for explaining a first charge transport layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention.
  • FIG. 11 (A) is a top view
  • FIG. 11 (B) is a cross-sectional view in the vicinity of the region A shown in FIG. 11 (A).
  • the substrate 2 on which the first electrode, the first insulating film 4, etc. are formed Apply processing steps.
  • a cleaning process using a surfactant or pure water, and various cleaning processes such as UV (Ultraviolet) irradiation Z ozone cleaning and plasma cleaning can be adopted.
  • a vacuum 1 X 10- 4 Pa (not shown) in, for example, formed of an organic material by various manufacturing methods such as resistance heating vapor deposition method Do the membrane.
  • the resistance heating vapor deposition method the substrate 2 is placed in the film formation chamber, and the film formation source filled with the film formation material is heated by calorie. A film is formed inside.
  • a film forming method using a vacuum vapor deposition method will be described.
  • a film forming layer is formed by a polymer material coating method, a film forming method using a printing method, a film forming method using a laser thermal transfer method, or the like. Also good.
  • NPB N, N-di (naphtalence) -N, N-dipheneyl-benzidene
  • the first charge transport layer 51 has a function of transporting holes (or electrons) injected from the lower electrode 3 to the light emitting layer 52.
  • the first charge transport layer 51 may be a single layer or a stack of two or more layers.
  • the first charge transport layer 51 has a high charge transport capability that allows a single layer to be formed of a plurality of materials rather than a single material, and provides a host material with a charge donating (accepting) property. High!
  • the guest material may be doped.
  • the first charge transport layer 51 is formed in the opening, to the top of the first insulating film 4 that forms the opening, and to the top of the first insulating film 4 formed on the outermost part.
  • a hole injection layer such as copper phthalocyanine (CuPc) may be formed between the first charge transport layer 51 and the lower electrode 3.
  • the organic light emitting functional layer 5 can use a general material used as a hole transport layer.
  • the organic light-emitting functional layer 5 is not limited to the above embodiment, and the material, film thickness, film forming method, etc. are designed according to various conditions such as the situation and environment in which the optical device 1 according to the present invention is used. A little.
  • FIG. 12 is a diagram for explaining a light emitting layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention.
  • FIG. 12A is a top view
  • FIG. 12B is a cross-sectional view in the vicinity of the region A shown in FIG.
  • the light emitting layer 52 is formed on the first charge transport layer 51.
  • the red (R), green (G), and blue (B) light emitting layers are formed in the respective film formation regions using a coating mask by resistance heating vapor deposition.
  • Red (R) is an organic material that emits red light, such as styryl dyes such as DCM1.
  • Green (G), such as Alq is emitted.
  • Blue (B) is an organic material that emits blue light, such as a distyryl derivative or a triazole derivative.
  • the light emission form which may be a host-guest layer structure may be a fluorescent light emitting material or a phosphorescent light emitting material.
  • the light emitting layer 52 is formed in the opening, to the top of the first insulating film 4 forming the opening and to the top of the first insulating film 4 formed on the outermost part.
  • FIG. 13 is a diagram for explaining a second charge transport layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention.
  • FIG. 13A is a top view
  • FIG. 13B is a cross-sectional view in the vicinity of region A shown in FIG. 13A.
  • various materials such as a resistance heating vapor deposition method, for example, various materials such as aluminum complex (Alq) are used as the second charge transport layer 53 as the light emitting layer. 52 top
  • the film is formed.
  • the second charge transport layer 53 has a function of transporting electrons injected from the upper electrode 6 to the light emitting layer 52.
  • the second charge transport layer 53 may have a multilayer structure in which only one layer is stacked or two or more layers are stacked.
  • the second charge transport layer 53 has a high charge donating (accepting) property to a host material having a high charge transport ability, which may be formed by a plurality of materials rather than a single material film. Can be formed by doping guest material.
  • the upper electrode 6 according to the present embodiment corresponds to an electron injection electrode, the second charge transport layer 53 can use a general material used as an electron transport layer.
  • the second charge transport layer 53 is not limited to the above embodiment, and the material, film thickness, and film formation method may be designed according to various conditions such as the situation and environment in which the optical device 1 is used.
  • the second charge transport layer 53 is formed in the opening, to the top of the first insulating film 4 that forms the opening, and to the top of the first insulating film 4 formed on the outermost part.
  • FIG. 14 shows an upper electrode forming step of the optical device manufacturing method according to the embodiment of the present invention. It is a figure for demonstrating.
  • FIG. 14 (A) is a top view
  • FIG. 14 (B) is a cross-sectional view in the vicinity of region A shown in FIG. 14 (A).
  • the upper electrode 6 is formed on the second charge transport layer 53. More specifically, a material for forming the upper electrode 6 is formed and patterned on the second charge transport layer 53 along the direction perpendicular to the upper electrode (first electrode) line 3 A to form the upper electrode 6. Form. As shown in FIG. 14A, the upper electrode 6 formed in a line shape is referred to as an upper electrode (second electrode) line.
  • This patterning method may be a patterning method using a film-forming mask or a patterning method using partition walls provided in a direction parallel to the upper electrode line.
  • the upper electrode line is formed so as to be electrically connected to the upper electrode 6 in which the opening of the first insulating film 4 is formed and the upper electrode lead wiring 3b formed in the lower electrode forming step.
  • the upper electrode 6 uses a material having a lower work function than the hole injection electrode so as to function as an electron injection electrode.
  • the upper electrode 6 preferably uses, for example, aluminum (A1) or a magnesium alloy (Mg—Ag). However, since A1 has a low electron injection capability, it is preferable to provide an electron injection layer such as LiF between A1 and the second charge transport layer 53.
  • the film formation range of the upper electrode 6 is formed in a region narrower than the film formation range of the organic light emitting functional layer 5.
  • paint using a vapor deposition mask is formed so that the end region 50 la of the organic light emitting functional layer 5 is exposed.
  • FIG. 15 is a diagram for explaining an organic material layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention.
  • FIG. 15 (A) is a top view
  • FIG. 15 (B) is a cross-sectional view in the vicinity of the region A shown in FIG. 15 (A).
  • the organic light emitting functional layer 5 including the first charge transport layer 51, the light emitting layer 52, and the second charge transport layer 53 on the upper electrode 6 is provided.
  • the organic material layer 7 is formed and patterned using the same material as any one of the organic layers.
  • the organic material layer 7 is formed by the same vacuum deposition from the second charge transport layer 53, for example.
  • the organic material layer 7 is, for example, an end of the organic light emitting functional layer 5 as shown in FIGS. 15 (A) and 15 (B).
  • a film is formed so as to cover the partial region 501a.
  • the interface 57 between the organic material layer 7 and the organic light emitting functional layer 5 has a relatively large affinity between the layers, so that there is substantially no interface.
  • FIG. 16 is a diagram for explaining an inorganic layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention.
  • FIG. 16 (A) is a top view
  • FIG. 16 (B) is a cross-sectional view around the region A shown in FIG. 16 (A).
  • an inorganic layer is formed on the organic material layer 7 using various metal materials such as aluminum (A1).
  • the inorganic layer 8 is formed with a smaller area than the organic material layer 7.
  • the inorganic layer 8 is formed by the same vacuum deposition from the first charge transport layer forming step.
  • the end portion 8a of the region 78 where the organic material layer 7 and the inorganic layer 8 overlap is formed.
  • the organic light emitting functional layer 5 and the upper electrode 6 are formed on the outer side of the pixel from the end portion 6a of the region 56, with the organic material layer 7 interposed therebetween.
  • the organic material layer 7 and the inorganic layer 8 are formed so that the end portion of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is covered with the organic material layer 7. .
  • the sealing member 9 is formed by a sealing substrate 91 made of various materials such as glass and a sealing material 92 such as an adhesive. Specifically, the sealing material is filled with an epoxy resin or the like in a sealing space between the substrate 2 and the sealing substrate 91 and solidified. In addition, even if concave processed glass, flat glass, etc. are used as a sealing member and bonded via an adhesive, a solid drying member is disposed in the space even if the space formed is filled with a liquid such as silicone oil. You may do it. To reduce the thickness of the organic EL display, the sealing member 9 is made of silicon nitride, silicon nitride oxide, MoO (molybdenum oxide), SnO (molybdenum oxide), SnO (molybdenum oxide), SnO (molybdenum oxide), SnO (molybdenum oxide), SnO (molybdenum oxide), SnO (molybdenum oxide), SnO (molybdenum oxide), SnO (
  • the sealing film may be formed of a sealing film made of a metal oxide such as (3 2 tin oxide).
  • the sealing film is an organic material. It is formed so as to cover the entire surface of the material layer and the inorganic layer.
  • the sealing film may be formed by vacuum deposition or by CVD or coating.
  • the optical device can be sealed by applying a solid sealing with a sealing substrate and a sealing material to an optical device that can be sealed only by film sealing using a sealing film.
  • the optical device may be formed by hermetically sealing with a sealing substrate.
  • the lower electrode lead formed on the substrate 2 is connected to the substrate 2 on which the above components are formed to connect the organic EL element 100 and the external circuit 85 (851, 852).
  • a wiring board such as the flexible board 80 (801, 802) is pressure-bonded to the positions of the wiring 3a and the upper electrode lead-out wiring 3b.
  • a force driving circuit in which the external circuit 85 is connected to the upper electrode and the lower electrode by the flexible substrate 80 is formed on the substrate.
  • COG Chip on glass
  • the driving circuit is formed on the flexible substrate 80.
  • Various mounting technologies such as FOG (Flip Chip on Glass) may be adopted.
  • the optical device 1 is completed after the inspection process and the aging process are performed after the external circuit 85 and the pressure bonding are completed.
  • the first charge transport layer forming step, the light emitting layer forming step, the second charge transport layer forming step, the upper electrode forming step, the organic material layer forming step, the inorganic layer Simplification of the manufacturing process can be achieved by performing the formation process by vacuum deposition.
  • the organic material layer 7 and the inorganic layer 8 are formed on the organic EL element 100, so that deterioration factors invade between the organic light emitting functional layer 5 and the upper electrode 6. It is possible to reduce light emission defects due to turning on.
  • the optical device 1 according to the present invention is not limited to the force that is a noisy matrix drive type.
  • the optical device according to the present invention is applied to an active drive type organic EL panel provided with (Thin Film Transistor). You can apply 1! /.
  • the optical device 1 having the above-described configuration can be easily manufactured by the method for manufacturing the optical device 1.
  • FIG. 17 is a cross-sectional view for explaining an optical device 1B according to the fourth embodiment of the present invention. About the same configuration and function as the first embodiment and the second embodiment, Description is omitted.
  • the optical device 1B As shown in FIG. 17, insulation between the organic material layer 7 formed on the upper electrode 6 of the self-luminous element 100 and the lower electrode 3 and the upper electrode 6 is ensured. And an inorganic layer 8 formed on the organic material layer 7.
  • the optical device 1B has a structure in which the end portion 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is covered with the first insulating film 4, as shown in FIG.
  • the end 6a of the upper electrode 6, the end 7a of the organic material layer 7 and the end 8a of the inorganic layer 8 are formed on the first insulating film 4 formed on the substrate 2 and / or the lower electrode 3.
  • the optical device 1B has a region where the organic material layer 7 and the inorganic layer 8 overlap (the interface between the organic material layer 7 and the inorganic layer 8) as shown in FIG. )) 78 is the region where the organic light emitting functional layer 5 and the upper electrode 6 overlap (interface between the organic light emitting functional layer 5 and the upper electrode 6) From the end of 56, the outer end 901a of the sealing part 9 It is formed on the side with an organic material layer 7 therebetween.
  • a capture unit that captures the degradation factor and reduces the degradation of the organic light emitting functional layer due to the degradation factor is formed. ing.
  • the organic light emitting functional layer 5 is formed in a structure in which the end portions of the layers are in contact with the first insulating film 4
  • the optical device 1B having the above-described configuration for example, even if a deterioration factor enters through the interface between the inorganic layer 8 and the first insulating film 4, it is formed at the interface between the organic material layer 7 and the inorganic layer 8. ! Since the deterioration factor is trapped in the capturing part, it is possible to further reduce the deterioration factor from entering between the organic light emitting functional layer 5 and the upper electrode 6.
  • FIG. 18 is a view for explaining an optical device 1C according to the fifth embodiment of the present invention.
  • 18A is a top view
  • FIG. 18B is a cross-sectional view in the vicinity of region A shown in FIG. 18A.
  • the optical device 1C according to the present embodiment is of an active matrix drive type, and in detail, as shown in FIGS. 18 (A) and 18 (B), a substrate on which a TFT for controlling the drive of the organic EL element 100 is formed. 2
  • the organic EL element 100 is formed on the (TFT substrate).
  • the optical device 1C has a region where the organic material layer 7 and the inorganic layer 8 overlap (interface between the organic material layer 7 and the inorganic layer 8).
  • the edge of the area where the organic light emitting functional layer 5 and the upper electrode 6 overlap (interface between the organic light emitting functional layer 5 and the upper electrode 6) 56 is closer to the outer end 901a side of the sealing part 9
  • the organic material layer 7 is spaced apart.
  • the TFT is electrically connected to the lower electrode 3. This TFT may be formed adjacent to the lower electrode 3 as shown in FIG. 18 (B), or a flattening layer (not shown) is formed on the substrate 2 and the flattening is performed. It may be formed in the chemical layer.
  • the present invention may be applied to the active matrix drive type optical device 1C.
  • the organic light emitting functional layer 5 may be formed of various organic materials that are not limited to the above-described embodiments.
  • the optical device 1 includes a self-emitting element (organic EL element) 100 in which the organic light emitting functional layer 5 including the light emitting layer 52 is sandwiched between the lower electrode 3 and the upper electrode 6.
  • a self-emitting element organic EL element 100 in which the organic light emitting functional layer 5 including the light emitting layer 52 is sandwiched between the lower electrode 3 and the upper electrode 6.
  • One pixel 11 or two or more pixels 11 are formed on the substrate 2 directly or via another layer, and an organic material layer 7 formed on the upper electrode 6 of the organic EL element 100.
  • the organic light emitting functional layer 5 and the upper electrode 6 overlap at the end of the region where the organic material layer 7 and the inorganic layer 8 overlap (interface 78).
  • the organic material layer 7 is spaced apart from the end of the region (interface 56) on the outer end (901a) side of the sealing portion 9, the upper electrode 6 and Degradation factor between aircraft light-emitting functional layer 5 can be reduced from entering. Further, it is possible to reduce the light emission failure caused by the penetration of the deterioration factor.
  • the end portion of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is the organic material layer 7 or the first electrode. Since it has a structure covered with the insulating film 4, it is possible to reduce deterioration factors from entering between the upper electrode 6 and the organic light emitting functional layer 5.
  • the organic material layer 7 is formed on the upper electrode 6 in a range wider than the film formation region of the upper electrode 6, and the inorganic layer 8 is formed on the organic material layer 7. It is formed in a narrower range than the film formation area. Accordingly, the organic material layer 7 is formed so as to form the interface 57 on a part of the organic light emitting functional layer 5.
  • the organic material layer 7 includes at least one organic material constituting the organic light emitting functional layer, so that the interface 57 between the organic light emitting functional layer 5 and the organic material layer 7 has substantially no interface. It is possible to reduce the intrusion of deterioration factors between the upper electrode 6 and the organic light emitting functional layer 5.
  • the first insulating film 4 formed on the substrate 2 and / or the lower electrode 3 is in contact with the end of the upper electrode 6, the end of the organic material layer 7, and the end of the inorganic layer 8.
  • the edge of the region where the organic material layer 7 and the inorganic layer 8 overlap is organic outside the end of the region where the organic light emitting functional layer 5 and the upper electrode 6 overlap (interface 56). Since they are formed so as to be separated from each other via the material layer 7, it is possible to further reduce deterioration factors from entering between the upper electrode 6 and the organic light emitting functional layer 5.
  • the organic light emitting functional layer 5, the upper electrode 6, the organic material layer 7, and the inorganic layer 8 by a vacuum deposition method, for example, compared with the case where the upper electrode 6 is formed by a sputtering method, Damage to the light emitting functional layer 5 can be reduced, and an optical device having a configuration according to the present invention can be formed by a simple manufacturing process.

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  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un dispositif optique comportant un élément émetteur de lumière autonome incorporant une couche fonctionnelle organique émettrice de lumière comprenant une couche émettrice de lumière prise en sandwich entre une paire d'électrodes. Les pertes d'émission de lumière dues à l'influence de facteurs dégradants sont réduites dans une région où une électrode supérieure chevauche la couche fonctionnelle organique émettrice de lumière. Dans un élément émetteur de lumière autonome (élément EL organique)(100) formant un pixel (11), une couche fonctionnelle organique (5) émettrice de lumière comprenant une couche (52) émettrice de lumière est prise en sandwich entre une électrode inférieure (3) et une électrode supérieure (6). Dans un dispositif optique (1), un ou plusieurs pixels (11) sont formés directement ou par l'intermédiaire d'autres couches sur un substrat (2). Le dispositif optique est doté d'une couche de matière organique (7) formée sur l'électrode supérieure (6) ; d'une couche inorganique (8) formée sur la couche de matière organique (7) de manière à créer une isolation entre l'électrode inférieure (3) et l'électrode supérieure ; et d'une partie d'étanchéité (9) destinée à assurer l'étanchéité de l'élément émetteur de lumière autonome formé sur le substrat à l'aide d'une matière d'étanchéité. Une partie d'extrémité d'une région (interface (78)), où la couche de matière organique (7) chevauche la couche inorganique (8), est formée séparément de façon à ce que la couche de matière organique (7) y soit intercalée du côté d'une extrémité extérieure de la partie d'étanchéité (9) en dehors de la partie d'extrémité d'une région (interface (56)) où la couche fonctionnelle organique (5) émettrice de lumière chevauche l'électrode supérieure (6).
PCT/JP2006/315848 2006-08-10 2006-08-10 Dispositif optique et procédé de fabrication de dispositif optique WO2008018137A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2006/315848 WO2008018137A1 (fr) 2006-08-10 2006-08-10 Dispositif optique et procédé de fabrication de dispositif optique
JP2008528696A JP4652451B2 (ja) 2006-08-10 2006-08-10 光デバイス、および光デバイスの製造方法

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PCT/JP2006/315848 WO2008018137A1 (fr) 2006-08-10 2006-08-10 Dispositif optique et procédé de fabrication de dispositif optique

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010027502A (ja) * 2008-07-23 2010-02-04 Tdk Corp 有機ｅｌ表示装置
JP2012517091A (ja) * 2009-02-05 2012-07-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 封止されたエレクトロルミネセント装置
EP2608288A1 (fr) * 2011-12-22 2013-06-26 Samsung Display Co., Ltd. Appareil à affichage luminescent organique et son procédé de fabrication
JP2021007111A (ja) * 2009-01-08 2021-01-21 株式会社半導体エネルギー研究所 発光装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06231881A (ja) * 1993-02-08 1994-08-19 Fuji Electric Co Ltd 有機薄膜発光素子
JPH07169567A (ja) * 1993-12-16 1995-07-04 Idemitsu Kosan Co Ltd 有機ｅｌ素子
JPH11111466A (ja) * 1997-10-06 1999-04-23 Tdk Corp 有機ｅｌ素子の電極
JP2004342515A (ja) * 2003-05-16 2004-12-02 Casio Comput Co Ltd 封止構造
JP2005011760A (ja) * 2003-06-20 2005-01-13 Casio Comput Co Ltd 封止方法及び封止構造

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06231881A (ja) * 1993-02-08 1994-08-19 Fuji Electric Co Ltd 有機薄膜発光素子
JPH07169567A (ja) * 1993-12-16 1995-07-04 Idemitsu Kosan Co Ltd 有機ｅｌ素子
JPH11111466A (ja) * 1997-10-06 1999-04-23 Tdk Corp 有機ｅｌ素子の電極
JP2004342515A (ja) * 2003-05-16 2004-12-02 Casio Comput Co Ltd 封止構造
JP2005011760A (ja) * 2003-06-20 2005-01-13 Casio Comput Co Ltd 封止方法及び封止構造

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010027502A (ja) * 2008-07-23 2010-02-04 Tdk Corp 有機ｅｌ表示装置
JP2021007111A (ja) * 2009-01-08 2021-01-21 株式会社半導体エネルギー研究所 発光装置
JP7048699B2 (ja) 2009-01-08 2022-04-05 株式会社半導体エネルギー研究所 発光装置
JP2012517091A (ja) * 2009-02-05 2012-07-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 封止されたエレクトロルミネセント装置
EP2608288A1 (fr) * 2011-12-22 2013-06-26 Samsung Display Co., Ltd. Appareil à affichage luminescent organique et son procédé de fabrication
US8952360B2 (en) 2011-12-22 2015-02-10 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same

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JP4652451B2 (ja) 2011-03-16

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