WO2008001853A1 - procédé de traitement au plasma et équipement - Google Patents

procédé de traitement au plasma et équipement Download PDF

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Publication number
WO2008001853A1
WO2008001853A1 PCT/JP2007/063013 JP2007063013W WO2008001853A1 WO 2008001853 A1 WO2008001853 A1 WO 2008001853A1 JP 2007063013 W JP2007063013 W JP 2007063013W WO 2008001853 A1 WO2008001853 A1 WO 2008001853A1
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WIPO (PCT)
Prior art keywords
plasma
processing
pressure
gas
processing container
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PCT/JP2007/063013
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English (en)
Japanese (ja)
Inventor
Noriaki Fukiage
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Tokyo Electron Limited
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Publication of WO2008001853A1 publication Critical patent/WO2008001853A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Definitions

  • the present invention relates to a method and apparatus for performing plasma processing such as plasma film formation processing or plasma etching processing on an object to be processed such as a semiconductor wafer, and more particularly to a technique for improving throughput.
  • the plasma processing apparatus 2 includes a processing container 4 that can be evacuated, and a mounting table 6 on which a semiconductor wafer W is mounted is provided in the processing container 4.
  • the mounting table 6 is supported by a support column 8 standing from the bottom wall of the processing container 4.
  • a microwave-permeable disk-shaped top plate 10 made of aluminum nitride or quartz is provided on the ceiling of the processing vessel 4.
  • a gas nozzle 12 for introducing various gases into the processing container 4 is provided on the side wall of the processing container 4.
  • a disk-shaped planar antenna member 14 having a thickness of about several millimeters and a dielectric force for shortening the microwave wavelength in the radial direction of the planar antenna member 14 are also provided.
  • Wave material 16 is installed.
  • the planar antenna member 14 is formed with a slot 18 for microwave radiation composed of a number of elongated through holes.
  • a central conductor 22 of the coaxial waveguide 20 is connected to the center of the planar antenna member 14.
  • An exhaust port 28 is provided at the bottom of the processing container 4, An exhaust passage 34 in which a pressure control valve 30 and a vacuum pump 32 are interposed is connected to the vent 28 so that the atmosphere in the processing container 4 can be evacuated.
  • Plasma is generated in the processing space S by the energy of the microwave introduced into the processing container 4, and the plasma processing such as plasma etching or plasma deposition is performed on the semiconductor wafer and W using this plasma. .
  • the flow rate, (C) shows the pressure in the processing vessel, and (D) shows the microwave power for plasma generation.
  • CF gas which is a film forming gas, is used as the processing gas, and the plasma gas is not used.
  • a CF film is formed as a low dielectric constant (Low-k) film used for interlayer insulation films and the like.
  • the first step is performed.
  • the supply of Ar gas into the processing container 4 is started, and the pressure in the processing container 4 is maintained at a pressure at which plasma can be ignited, for example, about 500 mTorr (67 Pa) for a predetermined time, for example, about 5 seconds.
  • the microwave generator 24 is driven to supply microwaves into the processing container 4.
  • the microwave power at this time is about 2500W, which is slightly lower than the process power (semiconductor UE, microwave power supplied into the processing vessel 4 when film is formed on W), for example, 30 OOW (Watt))
  • the plasma is ignited and the plasma is stably maintained in the processing container 4.
  • the second process takes about 5 seconds.
  • the third step is performed.
  • the pressure in the processing container 4 is changed from 500 mTorr to the process pressure (pressure in the processing container 4 when a film is formed on the semiconductor wafer W), for example, 45 mTorr and stabilized at this process pressure.
  • the microwave power is increased from 2500W to the process power of 3000W.
  • the time for the third step is about 5 sec.
  • the fourth step is performed.
  • CF gas is fed into the processing container 4 at a predetermined flow rate. Supply. Thereby, the deposition of the CF film on the semiconductor wafer W starts.
  • the time of the 4th process depends on the target film thickness of the CF film.
  • the plasma film forming process described above is a single wafer process that processes wafers W one by one. In order to improve throughput, the time required for processing one wafer W is several seconds. It is also desirable to shorten it.
  • the time of the first to third steps is relatively long.
  • the CF film is immediately after the start of the supply of CF gas.
  • the CF gas supply starting force does not start deposition About 5 seconds until the CF film deposition starts
  • This delay time causes a decrease in throughput.
  • FIG. 10 is a graph showing the relationship between the elapsed time from the start of the fourth step in the fourth step and the deposited film thickness. As is clear from FIG. 10, the film thickness does not increase until about 5 seconds after the CF gas supply start force elapses.
  • the time of about 5 seconds during which the film thickness does not increase is the delay time T1.
  • the delay time T1 occurs because the partial pressure of C F gas in the processing vessel 4 from the start of C F gas supply causes film deposition.
  • the delay time T1 varies depending on the capacity of the processing container 4 and the type of gas used.
  • a thin film of about 20 A is deposited on the wafer W at the start of the fourth process, but this thin film is deposited in the processing container 4 prior to the start of the film forming process.
  • a precoat film made of CF film adhered to the wall surface is deposited on the wafer surface by Ar sputtering in the second and third steps. The film quality of this thin film is slightly inferior to that of the film formed in the fourth step.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a plasma processing technique that can significantly improve the throughput by minimizing the delay time described above.
  • the present invention supplies an inert gas and a processing gas into a processing container that can be evacuated to a predetermined object with respect to an object to be processed in the presence of plasma.
  • processing An ignition pressure setting step for setting the pressure in the processing container to a pressure at which plasma can be ignited by starting the supply of an inert gas into the processing container, and the processing A plasma ignition step of starting the supply of the processing gas into the container, and igniting the plasma before the plasma becomes non-ignitable due to an increase in the partial pressure of the processing gas; and the pressure in the processing container A pressure adjusting step for changing to a process pressure for performing a predetermined process, and supplying / swinging the plasma to ignite and maintain the plasma power to a plasma power value for performing the predetermined process.
  • a plasma processing method characterized by including a process execution step for performing the predetermined process by changing.
  • the predetermined process may be a film forming process or an etching process.
  • the processing gas is supplied at the same flow rate as the supply flow rate of the processing gas in the processing execution step simultaneously with the start of the supply of the processing gas in the plasma ignition step.
  • the value of the plasma power in the process execution step is changed when the pressure in the process container reaches a process pressure for performing the predetermined process.
  • the plasma power in the plasma ignition step is lower than the plasma power in the processing execution step.
  • the plasma power in the plasma ignition step is lower than the plasma power in the processing execution step.
  • the pressure in the processing container in the ignition pressure setting step is higher than the pressure in the processing container in the processing execution step.
  • the present invention provides a plasma processing apparatus that performs a predetermined process in the presence of a plasma using a predetermined processing gas and an inert gas with respect to the target object.
  • a processing container provided with a mounting table, an exhaust system having a vacuum pump and a pressure control valve for exhausting the atmosphere in the processing container, the processing gas and an inert gas into the processing container
  • Gas supply means for supplying the plasma, plasma forming means for forming plasma in the processing container, and supply of an inert gas into the processing container is started so that the plasma can ignite the pressure in the processing container
  • An ignition pressure setting step for setting the pressure to a suitable pressure, and plasma for starting the supply of the processing gas into the processing container and igniting the plasma before the plasma cannot be ignited due to an increase in the partial pressure of the processing gas.
  • An ignition step a pressure adjusting step for changing the pressure in the processing container to a process pressure for performing the predetermined processing, and a plasma supplied to ignite and maintain the plasma.
  • At least the exhaust system, the gas supply means, and the plasma so that the process execution step of performing the predetermined process by changing the electric power to the value of the plasma power for performing the predetermined process is sequentially performed.
  • a control means for controlling the operation of the forming means.
  • the present invention provides a processing container provided with a mounting table on which a workpiece is placed, an exhaust system having a vacuum pump and a pressure control valve for exhausting the atmosphere in the processing container, and the processing
  • a gas supply means for supplying a processing gas and an inert gas into the container; and a plasma forming means for generating plasma in the processing container; and supplying the inert gas and the processing gas into the processing container.
  • a storage medium is provided which is configured to control the plasma processing apparatus.
  • FIG. 1 is a schematic cross-sectional view showing a configuration of an embodiment of a plasma processing apparatus according to the present invention.
  • FIG. 2 is a timing chart for explaining an embodiment of the plasma processing method according to the present invention.
  • FIG. 3 is a flowchart illustrating an embodiment of a plasma processing method according to the present invention.
  • FIG. 4 is a timing chart for explaining a first modification of the plasma processing method according to the present invention.
  • FIG. 5 is a timing chart for explaining a second modification of the plasma processing method according to the present invention.
  • FIG. 6 is a timing chart for explaining a third modification of the plasma processing method according to the present invention.
  • FIG. 7 is a graph showing the relationship between the elapsed time in the process execution process and the deposited film thickness of the CF film.
  • FIG. 8 is a schematic cross-sectional view showing a configuration of a conventional general plasma processing apparatus.
  • FIG. 9 is a timing chart illustrating an example of a conventional plasma film forming method.
  • FIG. 10 is a graph showing the relationship between the elapsed time in the fourth step and the deposited film thickness of the CF film.
  • FIG. 1 is a schematic cross-sectional view showing a configuration of an embodiment of a plasma processing apparatus according to the present invention.
  • a CF film is formed by plasma treatment using Ar gas and CF gas.
  • the plasma processing apparatus 40 has a cylindrical processing vessel 42 as a whole. Processing container
  • the side walls and bottom wall of 42 are formed of a conductor such as aluminum.
  • a sealed processing space S is defined inside the processing container 42, and plasma is formed in the processing space S.
  • the processing vessel 42 is electrically grounded.
  • a flat disk-shaped mounting table 44 is accommodated in the processing container 42. Upper surface of mounting table 44 A workpiece, for example, a semiconductor wafer W having a diameter of 300 mm is placed on the substrate.
  • the mounting table 44 is made of ceramic such as alumina.
  • the mounting table 44 is supported on the bottom wall of the container via an aluminum-made column 46.
  • a thin electrostatic chuck 50 is provided on the mounting table 44. Inside the electrostatic chuck 50, conductor wires arranged in a mesh shape as electrodes are provided. This conductor wire is connected to a DC power supply 54 via a wiring 52. By applying a DC voltage to the conductor wire, the wafer W placed on the mounting table 44, that is, on the electrostatic chuck 50 is removed. It is electrostatically attracted.
  • a bias high-frequency power source 56 is connected to the wiring 52 in order to apply a bias power of a predetermined frequency, for example, 13.56 MHz to the conductor wire of the electrostatic chuck 50.
  • a heating means 58 composed of a resistance heater is provided, and the wafer W can be heated by heat if necessary.
  • the mounting table 44 is provided with a plurality of elevating pins (not shown), for example, three that raise and lower the wafer W when the wafer W is carried in and out.
  • a gate valve 60 is provided that opens and closes when the Ueno and W are carried into and out of the processing vessel 42.
  • An exhaust port 62 is provided in the bottom wall of the container.
  • An exhaust system 64 is connected to the exhaust port 62 in order to exhaust, for example, vacuum exhaust the atmosphere in the processing container 42.
  • the exhaust system 64 has an exhaust passage 66 connected to the exhaust port 62.
  • a pressure control valve 68 made of, for example, a baffle valve is interposed in the upstream portion of the exhaust passage 66, and a vacuum pump 70 is interposed in the downstream portion of the exhaust passage 66.
  • a pressure detector 74 made of, for example, a capacitance manometer is provided on the side wall of the processing container 42, and the opening degree of the pressure control valve 68 is fed back based on the pressure in the processing container 42 measured by the pressure detector 74. Be controlled.
  • a ceramic material such as Al 2 O or a microphone having a quartz force is provided in the opening of the ceiling of the processing vessel 42.
  • a mouth wave permeable top plate 76 is airtightly attached through a seal member 78 such as an O-ring.
  • the thickness of the top plate 76 is, for example, about 20 mm in consideration of pressure resistance.
  • a plasma forming means 80 is provided on the upper surface side of the top plate 76.
  • the plasma forming means 80 has a disk-shaped planar antenna member 82 provided on the upper surface of the top plate 76 so as to face the mounting table 44.
  • Planar antenna section A slow wave material 84 is provided on the material 82.
  • the slow wave material 84 also has a high dielectric constant material force, and shortens the wavelength of the microwave propagating therein.
  • the entire surface of the slow wave member 84 is covered with a conductive waveguide box 86 in the form of a hollow cylindrical container.
  • the planar antenna member 82 constitutes the bottom plate of the waveguide box 86.
  • the peripheral portions of the waveguide box 86 and the planar antenna member 82 are both electrically connected to the processing container 42.
  • the outer conductor 88A of the coaxial waveguide 88 is connected to the central portion of the upper portion of the waveguide box 86.
  • the central conductor 88B of the coaxial waveguide 88 is connected to the central portion of the planar antenna member 82 through the through hole at the center of the slow wave member 84.
  • the coaxial waveguide 88 is connected to a microwave generator 94 having a predetermined frequency, for example, 2.45 GHz, through a waveguide 92 having a mode converter 90 and a matching unit (not shown) in the middle thereof. Then, the microwave is propagated to the planar antenna member 82.
  • the planar antenna member 82 is a conductor plate, for example, a copper plate or aluminum plate force with a silver-plated surface.
  • the planar antenna member 82 is formed with a number of microwave radiation slots 96 in the form of elongated through holes.
  • the slots 96 can be arranged, for example, concentrically, spirally, or radially.
  • a gas supply means 98 for supplying various gases necessary for processing is provided in the processing container 42.
  • the gas supply means 98 has a shower head portion 100 disposed above the mounting table 44 in the processing container 42.
  • the shower head unit 100 can be configured by combining a plurality of quartz tubular bodies in which a large number of gas injection holes 102 are formed in a lattice shape.
  • the shower head unit 100 can be in the form of a box-shaped container having a number of gas injection holes formed on the lower surface thereof.
  • a gas flow path 104 is connected to the shower head unit 100.
  • a plurality of gas flow paths 104 are branched into two branch paths here on the base end side, and gas sources 104A and 104B are connected to the respective branch paths.
  • One gas source 104A stores an inert gas as a plasma gas.
  • the force in which Ar gas is used as an inert gas is not limited to this, and other inert gases such as He gas, Ne gas, and N gas are used.
  • a sex gas can also be used.
  • the other gas source 104B stores a film forming gas as a processing gas.
  • a CF gas as a film forming gas, specifically, Replacing force using F gas Not limited to this, other CF gas may be used.
  • the gas supply means 98 includes a supply source of an inert gas such as N gas.
  • the two branch paths are respectively provided with flow controllers 106A and 106B for controlling the flow rate of the gas flowing therethrough, and further on the upstream side and the downstream side of each of the flow controllers 106A and 106B.
  • On-off valves 108A and 108B are interposed, respectively.
  • each gas can be supplied to the shower head unit 100 while controlling the flow rate as necessary.
  • the overall operation of the plasma processing apparatus 40 is controlled by a control means 110 having, for example, a microcomputer equal power.
  • a program for controlling the computer is stored in a storage medium 112 such as a flexible disk, CD (Compact Disc), HDD (Hard Disk Drive), or flash memory.
  • a storage medium 112 such as a flexible disk, CD (Compact Disc), HDD (Hard Disk Drive), or flash memory.
  • supply of each processing gas and flow control, supply of microwaves and power control (control of plasma power), control of process temperature and process pressure, and the like are performed.
  • the semiconductor wafer W is loaded into the processing container 42 by the transfer arm (not shown) through the opened gate valve 60, and the upper and lower pins (not shown) are moved up and down to move the wafer W to the upper surface of the mounting table 44. Then, the wafer W is electrostatically adsorbed by the electrostatic chuck 50.
  • the temperature of the wafer W is controlled as necessary by the heating means 58 built in the mounting table 44.
  • the Ar gas and Z or C F gas are supplied from the gas supply means 98 through the gas flow path 104 at the flow rates described in the timing chart of FIG.
  • the pressure in the processing vessel 42 is controlled to the pressure described in the timing chart of FIG. 2 through driving of the vacuum pump 70 of the exhaust system 64 and adjusting the opening of the pressure control valve 68.
  • the microwave generator 94 of the plasma forming means 80 generates microwaves having the output shown in the timing chart of FIG. 2 and the generated microphone mouth wave is planarized through the waveguide 92 and the coaxial waveguide 88.
  • the microwave whose wavelength is shortened by the slow wave material 84 is introduced into the processing space S in the processing container 42 after being supplied to the antenna member 82. Then, the gas in the processing space S is turned into plasma by the microwave energy, A film is deposited on the surface of the wafer w by the active species generated at this time.
  • FIG. 2 (A) is the Ar gas supply flow rate, (B) is the CF gas supply flow rate, (C) is the pressure inside the processing vessel, and (D) is the pre-flow rate.
  • Razma power meaning microwave power to generate plasma; the same applies hereinafter.
  • throughput is improved by suppressing the delay time T1 (see Fig. 7) that occurs in the conventional method.
  • the pressure at which the plasma can be ignited varies depending on the type of gas used.
  • the pressure is in the range of 5 to: LOOOOmTorr.
  • the pressure in the processing vessel 42 is set to 500 mTorr in consideration of the certainty of ignition.
  • the time for the ignition pressure setting step (S4) is, for example, about 1 sec.
  • the supply of 5 8 is started and plasma is ignited (S5: plasma ignition process).
  • the flow rate of DC F gas can be in the range of 10 to 1000 sccm, for example,
  • the flow rate of CF gas here is the flow rate in the process execution process described later.
  • the plasma power used for plasma ignition is preferably as low as possible. The reason is to suppress etching of the surface of the member exposed to the plasma such as the top plate 76 by Ar sputtering, as will be described later.
  • the lower limit of the plasma power that is, the microwave power required to ignite the plasma depends on the gas type and the pressure in the container. In the case of this embodiment, the lower limit of the plasma power required to ignite the plasma is about 1000 W (watts).
  • the time of the plasma ignition step (S5) is set to a minimum time required for the plasma to ignite and stabilize, for example, about 2 seconds.
  • the supply of CF gas and the supply of plasma power are started simultaneously.
  • the power supply may be started or vice versa. In any case, supply of CF gas and supply of plasma power are started within a short time of about 2 seconds. Processing capacity
  • the pressure in the processing container 42 is set to the process pressure (the pressure in the processing container when the CF film is deposited on the wafer W).
  • S6 Pressure adjustment process
  • the process pressure here can be in the range of 10 to 1000 mTorr, for example, and here it is 48 mTorr (6.4 Pa).
  • the time of the pressure adjustment process is the time required to change the pressure to the process pressure of the plasma ignition process, for example, about 3 seconds.
  • the plasma power is the process power (meaning the plasma power when the CF film is deposited on the wafer W. The same applies hereinafter) while maintaining the flow rate of each gas. ))
  • S7 process execution step
  • the plasma power that is, the process power
  • the plasma power can be set within a range of 1000 to 6000 W, for example, 3000 W here.
  • the time of the process execution step S7 is determined depending on the target film thickness of the CF film.
  • the processed wafer W is carried out of the processing container 42 (S9). If there is an unprocessed wafer W (NO in S10), the process returns to step S1. Repeat the above steps to complete the processing of all wafers (YES in S10)
  • the supply of the CF gas is started before the time point at which the process conditions for the deposition of the CF film are completely adjusted (that is, the start time of the processing execution step).
  • the delay time that has occurred in the conventional technology does not occur, so the wafer processing time per sheet is greatly shortened, and the throughput can be greatly improved.
  • the preceding supply time of CF gas depends on the plasma ignition process and pressure.
  • the sum of the time of the force adjustment process that is, 5 seconds. If this pre-feed time is too long, film deposition may begin before the plasma power is raised to process power. A film deposited under a condition different from the process condition in the processing execution step is inferior in film quality. In order to prevent the deposition of films with poor film quality, the capacity of the processing vessel 42 and the flow rate of CF gas must be adjusted.
  • the advance supply time of CF gas should be shorter than twice the delay time T1.
  • the delay time can be shortened compared to the conventional film formation method (see Fig. 9).
  • the starting force of the process execution process can substantially reduce the delay time until the deposition of the film starts. There is no risk of inferior CF film depositing on the wafer prior to the process.
  • the starting time of the plasma ignition process and the period until the end of the pressure adjustment process is the V ⁇ incubation time during which no film is formed.
  • the supply of CF gas was started after the start of the plasma ignition process and 5 seconds before the start of the process execution process.
  • the flow rate, pressure in the processing vessel, and plasma power were the same as those described in the timing chart of Fig. 2.
  • the experimental results are shown in the graph of Fig. 7.
  • the graph in Fig. 7 shows the relationship between the elapsed time from the start of the process execution process (when the plasma power is increased to 3000 W) and the total film thickness of the film deposited on the wafer.
  • A shows a comparative example
  • line B shows an example.
  • Ar plasma energy is given to CF gas, which reduces the amount of Ar sputtering.
  • the plasma power when igniting the plasma is set to about 1500 W, which is considerably lower than 2500 W in the conventional method (see FIG. 6).
  • Ar top sputtering made of alumina can be prevented from being sputtered. For this reason, it is possible to suppress the incorporation of the A1 component into the CF film deposited on wafer W.
  • the aluminum concentration in the CF film formed by the conventional method is “100”
  • the aluminum concentration in the CF film formed by the method of the present invention is 0.94-5. It was reduced to about 8 ”.
  • the film to be formed is a CF film.
  • the film is not limited to this, but may be any kind of film, such as a SiCO film, a SiN film, or a SiO film. Also,
  • the type of the plasma treatment is not limited to the film formation process, and may be another plasma process such as an etching process, an ashing process, or a cleaning process.
  • the target object is not limited to a semiconductor wafer, but may be another type of target object such as a glass substrate, an LCD substrate, or a ceramic substrate.

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  • Formation Of Insulating Films (AREA)

Abstract

Lorsque l'on réalise un traitement prédéterminé, par exemple un traitement de déposition de film, sur une pièce d'usinage (W) en présence de plasma en injectant du gaz inerte et du gaz de traitement dans un contenant de traitement, une phase consistant à régler une pression dans le contenant de traitement sur une valeur capable d'enflammer le plasma en lançant l'injection de gaz inerte dans le contenant de traitement, une phase consistant à lancer l'injection de gaz de traitement dans le contenant de traitement et à enflammer le plasma avant que cela ne devienne impossible en raison d'une augmentation de la pression partielle du gaz de traitement, une phase consistant à réguler la pression dans le contenant de traitement sur une pression de traitement permettant de réaliser le traitement prédéterminé, et une phase consistant à réaliser le traitement prédéterminé en modifiant la puissance du plasma injecté pour enflammer et maintenir le plasma à la valeur de puissance de plasma permettant de réaliser le traitement prédéterminé, sont réalisées de manière séquentielle. Comme le traitement prédéterminé se déroule de manière efficace sur la pièce d'usinage immédiatement après le début de la phase consistant à réaliser le traitement prédéterminé, le rendement peut être nettement amélioré.
PCT/JP2007/063013 2006-06-28 2007-06-28 procédé de traitement au plasma et équipement WO2008001853A1 (fr)

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JP2006-178786 2006-06-28
JP2006178786A JP2008010598A (ja) 2006-06-28 2006-06-28 プラズマ処理方法及びその装置

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JP6479562B2 (ja) * 2015-05-07 2019-03-06 東京エレクトロン株式会社 プラズマ処理装置の処理条件生成方法及びプラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135213A (ja) * 2004-11-09 2006-05-25 Tokyo Electron Ltd プラズマ処理方法、成膜方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135213A (ja) * 2004-11-09 2006-05-25 Tokyo Electron Ltd プラズマ処理方法、成膜方法

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