JP6479562B2 - プラズマ処理装置の処理条件生成方法及びプラズマ処理装置 - Google Patents
プラズマ処理装置の処理条件生成方法及びプラズマ処理装置Info
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- 238000000034 method Methods 0.000 title claims description 215
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- 238000001816 cooling Methods 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- 239000000498 cooling water Substances 0.000 description 1
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- 230000008034 disappearance Effects 0.000 description 1
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Plasma Technology (AREA)
Description
図1は、第1の実施形態に係るプラズマ処理装置の概略を示す図である。図1に示すプラズマ処理装置1は、処理容器12、ステージ14、PLL(Phase Locked Loop)発振器16、アンテナ18、誘電体窓20及び制御部100を備えている。
第2の実施形態は、処理条件の選択手法が、第1の実施形態と異なる。そこで、以下では、処理条件の選択手法について主に説明する。
第3の実施形態は、処理条件の選択手法が、第1の実施形態と異なる。そこで、以下では、処理条件の選択手法について主に説明する。
12 処理容器
14 ステージ
16 PLL発振器
18 アンテナ
20 誘電体窓
25 検出器
30 スロット板
38 ガス供給系
80 分光センサ
100 制御部
101 コントローラ
102 ユーザインタフェース
103 記憶部
Claims (6)
- プラズマ処理装置の処理条件生成方法であって、
高周波を用いて処理ガスのプラズマを着火する着火工程と、前記プラズマにより被処理体を処理する処理工程との間に実行される中間工程に適用され、処理パラメータが異なる複数の処理条件を生成し、
前記着火工程と、各前記処理条件が適用された前記中間工程と、前記処理工程とを順に実行し、
前記中間工程が前記処理工程に切り替えられる場合に、前記処理工程の実行中における前記高周波の反射波のパワーを各前記処理条件に対応付けて測定し、
前記複数の処理条件の中から、前記高周波の反射波のパワーが最小となる処理条件を選択する
処理を含むことを特徴とするプラズマ処理装置の処理条件生成方法。 - 前記プラズマ処理装置は、被処理体が載置される載置台に前記高周波とは異なる他の高周波を供給する高周波電源をさらに備え、
前記測定する処理は、前記中間工程が前記処理工程に切り替えられる場合に、前記処理工程の実行中における前記高周波の反射波のパワーと、前記処理工程の実行中における前記他の高周波の反射波のパワーとを各前記処理条件に対応付けて測定し、
前記選択する処理は、前記複数の処理条件の中から、前記高周波の反射波のパワーが最小となり、かつ、前記他の高周波の反射波のパワーが最小となる処理条件を選択する
ことを特徴とする請求項1に記載のプラズマ処理装置の処理条件生成方法。 - 前記測定する処理は、前記中間工程が前記処理工程に切り替えられる場合に、前記処理工程の実行中における前記高周波の反射波のパワーと、前記処理工程の実行中における前記プラズマの発光強度とを各前記処理条件に対応付けて測定し、
前記選択する処理は、前記複数の処理条件の中から、前記高周波の反射波のパワーが最小となる処理条件を選択し、選択した処理条件に対応する前記プラズマの発光強度が所定値未満である場合に、当該処理条件を破棄する
ことを特徴とする請求項1又は2に記載のプラズマ処理装置の処理条件生成方法。 - 前記処理パラメータは、前記高周波が放射される処理容器の内部の圧力、前記処理ガスの種類、前記処理ガスの流量、前記高周波のパワー、前記高周波の周波数、被処理体が載置される載置台に供給される他の高周波のパワー、前記他の高周波の周波数及び処理時間の少なくともいずれか一つであることを特徴とする請求項1〜3のいずれか一つに記載のプラズマ処理装置の処理条件生成方法。
- 前記プラズマ処理装置は、前記着火工程、前記中間工程及び前記処理工程を実行する際に用いられるレシピを記憶する記憶部を備え、
前記選択する処理は、選択された前記処理条件が前記中間工程に適用されるように、前記レシピを書き換える
ことを特徴とする請求項1〜4のいずれか一つに記載のプラズマ処理装置の処理条件生成方法。 - 高周波を供給する高周波供給部と、
前記高周波を用いて処理ガスのプラズマを着火する着火工程と、前記プラズマにより被処理体を処理する処理工程との間に実行される中間工程に適用され、処理パラメータが異なる複数の処理条件を生成し、前記着火工程と、各前記処理条件が適用された前記中間工程と、前記処理工程とを順に実行し、前記中間工程が前記処理工程に切り替えられる場合に、前記処理工程の実行中における前記高周波の反射波のパワーを各前記処理条件に対応付けて測定し、前記複数の処理条件の中から、前記高周波の反射波のパワーが最小となる処理条件を選択する制御部と
を備えることを特徴とするプラズマ処理装置。
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JP2015095091A JP6479562B2 (ja) | 2015-05-07 | 2015-05-07 | プラズマ処理装置の処理条件生成方法及びプラズマ処理装置 |
KR1020160050746A KR102412248B1 (ko) | 2015-05-07 | 2016-04-26 | 플라즈마 처리 장치의 처리 조건 생성 방법 및 플라즈마 처리 장치 |
TW105113160A TW201643933A (zh) | 2015-05-07 | 2016-04-27 | 電漿處理裝置之處理條件產生方法及電漿處理裝置 |
US15/146,018 US9870901B2 (en) | 2015-05-07 | 2016-05-04 | Method of producing processing condition of plasma processing apparatus, and plasma processing apparatus |
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JP2021180070A (ja) * | 2020-05-11 | 2021-11-18 | 東京エレクトロン株式会社 | プラズマ処理装置及びマイクロ波制御方法 |
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JP4619468B2 (ja) | 1999-03-25 | 2011-01-26 | 株式会社東芝 | プラズマ処理方法、プラズマ処理装置およびプラズマモニタリング装置 |
JP5138131B2 (ja) * | 2001-03-28 | 2013-02-06 | 忠弘 大見 | マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法 |
JP4024053B2 (ja) * | 2002-02-08 | 2007-12-19 | キヤノンアネルバ株式会社 | 高周波プラズマ処理方法及び高周波プラズマ処理装置 |
US20050069651A1 (en) * | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Plasma processing system |
JP2005142486A (ja) * | 2003-11-10 | 2005-06-02 | Pearl Kogyo Co Ltd | 整合器 |
JP4739793B2 (ja) | 2005-03-31 | 2011-08-03 | 株式会社ダイヘン | 高周波電源装置 |
JP4838525B2 (ja) * | 2005-03-31 | 2011-12-14 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置及び可変整合器におけるインピーダンスのプリセット値を決定するためのプログラム |
JP2008010598A (ja) * | 2006-06-28 | 2008-01-17 | Tokyo Electron Ltd | プラズマ処理方法及びその装置 |
JP5319150B2 (ja) * | 2008-03-31 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体 |
US8502455B2 (en) * | 2009-05-29 | 2013-08-06 | Agilent Technologies, Inc. | Atmospheric inductively coupled plasma generator |
US8513889B2 (en) * | 2009-10-21 | 2013-08-20 | Applied Materials, Inc. | Methods and apparatus for tuning matching networks |
JP5100853B2 (ja) | 2011-01-11 | 2012-12-19 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP5955520B2 (ja) * | 2011-09-09 | 2016-07-20 | 東京エレクトロン株式会社 | マイクロ波処理装置およびその制御方法 |
JP6037688B2 (ja) * | 2012-07-09 | 2016-12-07 | 東京エレクトロン株式会社 | マイクロ波導入モジュールにおける異常検知方法 |
JP6099995B2 (ja) * | 2013-01-24 | 2017-03-22 | 東京エレクトロン株式会社 | 試験装置 |
KR102168064B1 (ko) * | 2013-02-20 | 2020-10-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
WO2015145663A1 (ja) * | 2014-03-27 | 2015-10-01 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
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JP2016213031A (ja) | 2016-12-15 |
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US9870901B2 (en) | 2018-01-16 |
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US20160329194A1 (en) | 2016-11-10 |
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