WO2008001798A1 - Procédé et dispositif de détection d'onde oscillante - Google Patents

Procédé et dispositif de détection d'onde oscillante Download PDF

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Publication number
WO2008001798A1
WO2008001798A1 PCT/JP2007/062863 JP2007062863W WO2008001798A1 WO 2008001798 A1 WO2008001798 A1 WO 2008001798A1 JP 2007062863 W JP2007062863 W JP 2007062863W WO 2008001798 A1 WO2008001798 A1 WO 2008001798A1
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WO
WIPO (PCT)
Prior art keywords
resonance
vibration wave
resonators
wave detection
beams
Prior art date
Application number
PCT/JP2007/062863
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English (en)
Japanese (ja)
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WO2008001798B1 (fr
Inventor
Shigeru Ando
Nobutaka Ono
Yuya Fujita
Naoki Ikeuchi
Original Assignee
The University Of Tokyo
Tokyo Electron Limited
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Filing date
Publication date
Application filed by The University Of Tokyo, Tokyo Electron Limited filed Critical The University Of Tokyo
Publication of WO2008001798A1 publication Critical patent/WO2008001798A1/fr
Publication of WO2008001798B1 publication Critical patent/WO2008001798B1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
    • G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H13/00—Measuring resonant frequency

Definitions

  • the present invention relates to a vibration wave detection method and apparatus for detecting the intensity of vibration waves for each frequency band.
  • Non-Patent Document 1 and Non-Patent Document 2 disclose resonator array type vibration sensors that detect the intensity of vibration waves for each frequency band.
  • This vibration sensor includes an array of resonators having different resonance frequencies. Each resonator resonates with the frequency component of the resonance frequency of its own resonator among the frequency components of vibration waves such as sound waves. This vibration sensor converts the resonance level of each resonator into an electrical signal and outputs it.
  • a piezoresistor is formed near the support portion of the resonator, and a change in the resistance value of the piezoresistor caused by the vibration (resonance) of the resonator is detected by a Wheatstone bridge or the like. Thus, an electrical output signal is extracted from the resonator.
  • the sensor described in Non-Patent Document 2 switches the multiplexer to obtain the Wheatstone bridge output signal at each resonator.
  • Patent Document 1 and Patent Document 2 propose a method of controlling the gain of a specific frequency band with a simple circuit configuration of a resonator array type. For example, in the technique described in Patent Document 1, in a resonator array type vibration sensor, each piezoresistor provided in each resonator is connected in parallel. By changing the resistance value by changing the power voltage applied to the parallel circuit or changing the shape of the piezoresistor, the gain in a specific frequency band is controlled.
  • Patent Document 2 utilizes the fact that the magnitude of distortion varies depending on the position of the resonator. That is, the gain of a specific frequency band is controlled by adjusting the position where the piezoresistor is provided in each resonator so that the level of the output signal in each frequency band becomes a desired level.
  • Non-specific 3 pm Reference 1 W. Benecke et al., A Frequencv-eiective, Piezoresistive Silicon Vi bration Sensor, "Digest of Technical Papers of TRANSDUCERS '85, pp. 105-108 (1 985)
  • Non-Patent Document 2 E. Peeters et al., "Vibration Signature Analysis Sensors for Predictive Diagnostics," Proceedings of SPIE, 97, vol. 3224, pp. 220-230 (1997)
  • Patent Document 1 JP 2000-46639 A
  • Patent Document 2 Japanese Patent Laid-Open No. 2000-46640
  • g be a Hilbert transform of f
  • f and g be a Hilbert transform pair.
  • the hinorebenore transformation is a function that connects the real and imaginary parts of the analytic function.
  • vibration phenomena are characterized by time-varying amplitude and phase.
  • Patent Document 1 a dynamically changeable frequency characteristic is realized by applying a negative voltage of a piezoresistive detector according to the resonance frequency of the resonator.
  • the load for vibration wave detection is limited to positive and negative real numbers, and the Hilbert transform versus output cannot be obtained in real time as instantaneous values.
  • the present invention has been made in view of such circumstances, and its purpose is to instantaneously
  • the object is to provide a vibration wave detection method and apparatus capable of obtaining a Hilbert transform versus output as a time value.
  • the vibration wave detection method includes:
  • the plurality of resonators are arranged so that the positions of the respective resonators are logarithmic linear proportional to the logarithm of their resonance frequencies
  • N is an integer of 2 or more, N ⁇ every other resonator is selected, and the outputs of the detectors are added to output a plurality of signals.
  • the vibration wave detection device according to the second aspect of the present invention provides:
  • a resonator array in which a plurality of resonators resonating at specific frequencies different from each other are arranged IJ so that the position of each resonator is logarithmically linear in proportion to the logarithm of the resonance frequency
  • a plurality of output synthesizers that select the plurality of resonators every N_ 1 and add the outputs of the detectors, where N is an integer greater than or equal to 2,
  • vibration wave detection method and vibration wave detection apparatus of the present invention it is possible to obtain a Hilbert transform pair output as an instantaneous value in real time (without performing an operation on data for a certain period).
  • FIG. 1 is a diagram showing an example of a sensor body in a vibration wave detection device of the present invention.
  • FIG. 2 is a circuit diagram showing an example of a vibration wave detection apparatus of the present invention.
  • FIG. 3 is a diagram schematically showing frequency characteristics of a resonant beam of the sensor body.
  • FIG.4 Shows an example of the sensor body in the case where a resonant beam is provided on both sides of the transverse beam
  • FIG. 5 is a circuit diagram showing an example of a vibration wave detection device of the present invention using the sensor body of FIG.
  • FIG. 6 is a circuit diagram showing an example of a vibration wave detection device of the present invention when the detector is a capacitor.
  • FIG. 7 is a diagram showing an example of a vibration wave detection device in which a resonance beam is provided on both sides of a transverse beam and the detector is a capacitor.
  • FIG. 8 is a circuit diagram showing an example of a piezoresistive vibration wave detector that outputs the sum of the outputs of the respective resonant beams.
  • FIG. 9 is a circuit diagram showing an example of a piezoresistive vibration wave detector using a plurality of bias voltage lines.
  • FIG. 1 is a diagram showing an example of a sensor body in the vibration wave detection device of the present invention.
  • Half The sensor body 1 formed on the conductive silicon substrate 20 includes a diaphragm 2 that receives sound waves, a transverse beam 3 that is connected to the diaphragm 2, a stop plate 4 that is connected to the tip of the transverse beam 3, and a transverse beam 3 5m (hereinafter collectively referred to as resonant beam 5), all of which are formed of semiconductor silicon. Yes.
  • the width of the transverse beam 3 is thickest at the end on the diaphragm 2 side, and then gradually narrows toward the end plate 4 side according to the direction force, and is narrowest at the end on the end plate 4 side.
  • Zn indicates the width of the transverse beam 3 at the position where the nth resonance beam 5n is supported.
  • Each resonant beam 5 is a resonator whose length is adjusted so as to resonate at a specific frequency.
  • the plurality of resonant beams 5 are selectively oscillated in response to the resonant frequency f expressed by the following equation (3).
  • the resonant frequency f can be set to a desired value.
  • Each resonant beam 5 has a unique resonant frequency.
  • the thickness a of all the resonant beams 5 is constant, and the length X of the resonant beams 5 is made to increase gradually from the right side (diaphragm 2 side) to the left side (end plate 4 side). That is, from the right side (diaphragm 2 side) to the left side (end plate 4 side)
  • the resonant frequency at which each resonant beam 5 inherently vibrates with increasing force is set from a high frequency to a low frequency.
  • each resonance beam 5 in the sensor body 1 is proportional to the logarithm of the resonance frequency of the resonance beam 5. This is called a log-linear structure.
  • the resonant beams 5 are configured to be arranged at equal intervals. That is, the ratio of the resonance frequencies of the adjacent resonance beams 5 is constant for any resonance beam 5.
  • the sensor body 1 configured in this way is called a fishbone sensor.
  • the shape from the position of the resonance beam 5 of the transverse beam 3 to the shape of the resonance beam 5 in any resonance beam 5 is the same structure (self (Similar).
  • the traveling speed of the vibration wave transmitted through the transverse beam 3 is proportional to the frequency, and the wavelength is constant regardless of the frequency.
  • the sensor main body 1 having the above-described configuration is manufactured on the semiconductor silicon substrate 20 by using a micromachine cache technique.
  • the vibration energy input from the diaphragm 2 is distributed to the respective resonant beams 5 through the transverse beams 3, absorbed by the mechanical-electric converters of the respective resonant systems, converted into signal energy, and extracted.
  • FIG. 8 is a circuit diagram showing an example of a conventional piezoresistive vibration wave detection device that outputs the sum of the outputs of the respective resonant beams 5 using the sensor body 1.
  • a positive DC bias is applied to the upper resonance beams 51a to 5ma
  • a negative DC bias is applied to the lower resonance beams 51b to 5mb
  • the current force of each resonance beam 5 is Added and output.
  • the upper and lower resonant beams 5 that make a pair vibrate in opposite phases, and the upper and lower piezoresistors 6 expand and contract in opposite phases.
  • the resistance value of the piezoresistor on the i-th upper resonant beam is R + ⁇ R (t)
  • the resistance value of the piezoresistor on the i-th lower resonant beam is R _ ⁇ R (t)
  • FIG. 9 is a circuit diagram showing an example of a conventional piezoresistive vibration wave detector using a plurality of noise voltage lines. Using the circuit in Fig. 9, dynamic gain adjustment by frequency is possible. If the bias voltage of the i-th resonant beam is soil V, the output voltage V is expressed by the following equation (6).
  • the vibration wave detection device shown in FIG. 9 has variable frequency characteristics, but the gain that can be set for each frequency is limited to a real number.
  • the gain in frequency filtering becomes real or pure imaginary only when the impulse response is symmetric or anti-symmetric. If the gain set for each frequency is limited to a real number, an arbitrary impulse response cannot be realized.
  • Fig. 8 or Fig. 9 In any of the vibration wave detectors shown in Fig. 1, the output is limited to the real part, and the output of the Hilbert transform pair cannot be obtained.
  • FIG. 2 is a circuit diagram showing an example of the vibration wave detection apparatus of the present invention using the sensor body 1.
  • Piezoresistors 61, 62, and 6m (hereinafter collectively referred to as piezoresistors 6) are formed in the distortion generating portions (crossing beam 3 side) of each resonance beam 5 of the sensor body 1.
  • the plurality of piezoresistors 6 are connected in parallel, and one end of the piezoresistor 6 is connected to a power source 7a having a bias voltage V.
  • the other end of the piezoresistor 6 is connected to the input terminal of operational amplifiers 10a, 10b, and 10c (hereinafter collectively referred to as operational amplifier 10) by a common line every other N_1, where N is a positive integer. It is connected. That is, the current outputs from the piezoresistors 6 having the same number of N remainders (modulo) are added and input to different operational amplifiers 10 respectively.
  • Such a configuration is called the N-phase addition method.
  • N is 3
  • the transfer impedance type operational amplifier 10 is a current-voltage conversion amplifier having an input impedance of 0 and an output impedance of 0.
  • the + input terminal of the operational amplifier 10 is grounded.
  • the common line connected every other N— is connected to the negative voltage—V power supply 7b through a dummy resistor Rd.
  • FIG. 3 is a diagram schematically showing the frequency characteristic Fn (Q) of the resonant beam 5 of the sensor body 1. Since the ratio of the resonant frequencies of the adjacent resonant beams 5 is constant, the frequency characteristics Fn (Q) expressed on the logarithmic frequency are almost the same shape and are arranged at equal intervals ⁇ .
  • ⁇ ⁇ () ⁇ F n + kN (Q)
  • Equation (9) is obtained.
  • Equation 10 H (c) and f (c) are Fourier transforms on the logarithmic frequency axis of ⁇ ⁇ ( ⁇ ) and F (Q), respectively, and can be expressed as equations (11) and (12), respectively. it can.
  • the sensor body 1 has a logarithmic linear structure.
  • the logarithmic frequency ⁇ is proportional to the longitudinal position of the transverse beam 3 (the interval between the resonant beams 5 is proportional to the difference of the logarithmic frequency ⁇ ).
  • H ( ⁇ ) can be regarded as a kind of wave on transverse beam 3. Therefore, h (c) corresponds to the transformation of the wave H ( ⁇ ) into the (spatial) frequency domain.
  • ⁇ ( ⁇ ) to ⁇ ( ⁇ ) is a representation of the Hilbert transform pair in terms of power.
  • the structural parameter is controlled so that the Fourier transform f (c) of the frequency characteristic on the logarithmic frequency axis becomes narrow enough to satisfy the equation (13), and the amplitude peak of f (c) for c
  • N 3 and the Hilbert transform pair output is obtained as an instantaneous value in real time in three phases every 2 ⁇ / 3. From Equations (7) to (20), if the ratio of resonant frequencies of resonant beams selected every other line ( ⁇ ⁇ ) is constant, ⁇ is not constant. I can tell you what you need to do. When ⁇ is constant, the N-phase is equidistant on the complex plane.
  • ⁇ is made constant, that is, the ratio of the resonant frequencies of the adjacent resonant beams is made constant, and output is made in three phases, it is easy to handle the output as soon as the sensor body 1 creates it.
  • a component orthogonal to the first output can be obtained from the outputs of the second and third phases by appropriately adjusting the gain.
  • the declination angle differs by ⁇ ⁇ 2, so the first and third phases, and the second and fourth phases become opposite phase signals, but the real part (first and third phases) Phase) and imaginary part (2nd and 4th phase) signals
  • the vibration wave detection method of the present invention can be used in any scene where a conventional microphone or vibration sensor is used. Furthermore, it can be used in the following cases, which could not be done in the past.
  • vibration / acoustic detection with high time resolution for example, abnormal sound can be detected instantaneously in a continuously operating machine.
  • a wideband AM / FM demodulator can be realized. Then, noise detection can be performed using the redundant signal of the negative phase.
  • FIG. 4 shows an example of a vibration wave detection device in the case where the resonant beam 5 is provided on both sides of the transverse beam 3.
  • the resonant beams 5 on both sides of the transverse beam 3 have the same resonant frequency, and ⁇ sets of resonant beams 5 are formed in pairs facing each other.
  • FIG. 5 is a circuit diagram showing an example of the vibration wave detection apparatus of the present invention using the sensor body 1 of FIG.
  • Ezoresistors 61a, 61b to 6ma, 6mb (hereinafter collectively referred to as piezoresistor 6) are formed.
  • the plurality of piezoresistors 6 are connected in parallel, and one ends of the upper piezoresistors 61a to 6ma in FIG. 5 are connected to a power source 7a having a bias voltage V.
  • One ends of the resistors 61b to 6mb are connected to a power source 7b having a bias voltage—V.
  • the other end of the piezoresistor 6 is connected to the input terminal of the operational amplifier 10 by a common line every other N_1, where N is a positive integer.
  • N is 3, and the other end of the piezoresistor 6 is
  • 63a and 63b are connected to the operational amplifier 10c.
  • the + input terminal of the operational amplifier 10 is grounded. Since every other N ⁇ output line is connected to the power supply 7b via the piezoresistor 6nb of the paired resonant beam 5nb, the dummy resistor Rd is not required.
  • the resonance frequencies of the paired resonance beams 5na and 5nb are the same and are added as the same phase, so the same result as the configuration of FIG. 2 is obtained.
  • the sensitivity is doubled because the upper and lower piezoresistors 6 are differential.
  • FIG. 6 is a circuit diagram showing an example of the vibration wave detection device of the present invention when the detector is a capacitor.
  • Electrodes 91 to 9m are formed on the semiconductor silicon substrate 20 at positions facing the front end portions 81 to 8m (hereinafter collectively referred to as front end portions 8) of the respective resonant beams 5.
  • a capacitor is constituted by the tip 8 of each resonance beam 5 and each electrode 9 opposed thereto.
  • the tip 8 of the resonant beam 5 is a movable electrode that moves up and down with vibration.
  • the electrode 9 formed on the semiconductor silicon substrate 20 is a fixed electrode whose position does not move.
  • the plurality of electrodes 9 are connected in parallel and connected to a power source 7a with a bias voltage V.
  • the tip 8 of each resonant beam 5 is connected to the input terminal of the operational amplifier 10 by a common line every N_l, where N is a positive integer.
  • N is 3
  • the tips 81,... Are connected to the operational amplifier 10a
  • the tips 82 are connected to the operational amplifier 10b
  • the tips 83 are connected to the operational amplifier 10c.
  • the + input terminal of the operational amplifier 10 is grounded.
  • a common line connected every N_ l lines is connected to a negative voltage—V power supply 7b via a dummy resistor Rd.
  • the vibration wave detection device of FIG. 6 is completely different from that of the first embodiment except that the phase of the resistance to the vibration wave and the change of the capacitor are different from those of the sensor body 1 of the piezoresistor 6 of FIG. The same can be handled. Therefore, even if the detector is a capacitor, every H ⁇ 1 every other time, the Hilbert transform pair output can be obtained as an instantaneous value in real time.
  • FIG. 7 shows an example of a vibration wave detection device in which the resonance beam 5 is provided on both sides of the transverse beam 3 and the detector is a capacitor.
  • the resonance beams 5 on both sides of the transverse beam 3 have the same resonance frequency, and m pairs of resonance beams 5 are formed in pairs. ing. Electrodes 91a, 91b-9ma, and 9mb (hereinafter referred to as electrodes 9) are disposed on the semiconductor silicon substrate 20 at positions facing the distal ends 81a, 81b to 8ma, and 8mb (hereinafter collectively referred to as distal ends 8) of the resonance beams 5, respectively. And a capacitor is constituted by the tip 8 of each resonance beam 5 and each electrode 9 opposed thereto.
  • the upper electrodes 91a to 9ma in Fig. 7 are connected to a power source 7a having a bias voltage V.
  • the lower electrodes 91b to 9mb are connected to a power supply 7b having a noisy voltage ⁇ V.
  • each resonant beam 5 is connected to the input terminal of the operational amplifier 10 by a common line every other N—where N is a positive integer.
  • the tips 81a, 81b, ... are connected to the operational amplifier 10a
  • the tips 82a, 82b, ... are connected to the operational amplifier 10b
  • the tips 83a, 83b, ... are connected to the operational amplifier 10c.
  • the + input terminal of the operational amplifier 10 is grounded
  • the vibration wave detecting device of FIG. 7 is a modification of the first embodiment except that the phase of the resistance change and the change of the capacitor with respect to the vibration wave is different from that of the sensor body 1 of the piezoresistor 6 of FIG. Example Can be handled exactly the same. Therefore, even if the detector is a capacitor, the output from the Hilbert transform can be obtained by adding every N ⁇ 1. Further, compared with the configuration of the resonant beam 5 on one side in FIG.
  • the vibration wave detection apparatus of the present invention it is possible to obtain the Hilbert transform pair output as an instantaneous value in real time even when the detector is a capacitor.
  • the present invention can be used for a frequency detection device that detects the frequency of sound waves.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)

Abstract

L'invention concerne un procédé et un dispositif de détection d'onde oscillante capable d'obtenir une sortie de paire de transformées de Hilbert sous forme de valeur instantanée en temps réel. Le procédé de détection de l'onde oscillante amène une onde oscillante à se propager jusqu'à une pluralité de faisceaux de résonance (5 l à 5 m), chacun résonant à une fréquence particulière, et détecte une oscillation de chacun des faisceaux de résonance (5 l à 5 m) sous forme de signal électrique par l'utilisation de résistances piézo-électriques (6 l à 6 m) disposées dans les faisceaux de résonance (5 l à 5 m). Les faisceaux de résonance (5 l à 5 m) sont disposés de telle sorte que les positions des résonateurs respectifs sont disposées en forme linéaire logarithmique proportionnelle à un logarithme de leurs fréquences de résonance. Lorsque N est un entier non inférieur à 2, les faisceaux de résonance (5 l à 5 m) sont choisis par un N-1 sur deux et les sorties des résistances piézo-électriques (6 l à 6 m) sont ajoutées de façon à émettre une pluralité de signaux. De façon davantage préférée, N est un entier égal ou supérieur à 3, les faisceaux de résonance (5 l à 5 m) sont disposés et les fréquences de résonance sont établies de telle sorte que le rapport des fréquences de résonance des faisceaux de résonance (5 l à 5 m) d'un N-1 sur deux est constant.
PCT/JP2007/062863 2006-06-27 2007-06-27 Procédé et dispositif de détection d'onde oscillante WO2008001798A1 (fr)

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JP2006-177199 2006-06-27
JP2006177199A JP2008008683A (ja) 2006-06-27 2006-06-27 振動波検出方法及び装置

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WO2008001798A1 true WO2008001798A1 (fr) 2008-01-03
WO2008001798B1 WO2008001798B1 (fr) 2008-03-13

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KR20180015482A (ko) 2016-08-03 2018-02-13 삼성전자주식회사 음향 스펙트럼 분석기 및 이에 구비된 공진기들의 배열방법
JP7030331B2 (ja) * 2018-03-28 2022-03-07 リバーエレテック株式会社 Ａｅセンサ素子及びａｅセンサ
TWI681371B (zh) * 2018-03-31 2020-01-01 鈺紳科技股份有限公司 振動與聲波整合感測系統及方法
CN112595408B (zh) * 2020-12-10 2021-07-23 四川度飞科技有限责任公司 动态共振传感装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0265131U (fr) * 1988-11-04 1990-05-16
JPH10254460A (ja) * 1997-03-12 1998-09-25 Rion Co Ltd ノイズ発生装置及びこれを用いた残響時間測定装置
JPH10325753A (ja) * 1997-05-26 1998-12-08 Sumitomo Metal Ind Ltd 音響センサ
JP2000046639A (ja) * 1998-05-22 2000-02-18 Sumitomo Metal Ind Ltd 振動波検出方法及び装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0265131A (ja) * 1988-08-31 1990-03-05 Hitachi Ltd プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0265131U (fr) * 1988-11-04 1990-05-16
JPH10254460A (ja) * 1997-03-12 1998-09-25 Rion Co Ltd ノイズ発生装置及びこれを用いた残響時間測定装置
JPH10325753A (ja) * 1997-05-26 1998-12-08 Sumitomo Metal Ind Ltd 音響センサ
JP2000046639A (ja) * 1998-05-22 2000-02-18 Sumitomo Metal Ind Ltd 振動波検出方法及び装置

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