WO2008001742A1 - PROCÉDÉ DE FABRICATION DE STRUCTURES DE SUBSTRAT, STRUCTURE DE SUBSTRAT, ÉLÉMENT ÉMETTEUR D'ÉLECTRONS, PROCÉDÉ DE FABRICATION D'ÉLÉMENTS ÉMETTEUR D'ÉLECTRONS, SOURCE D'ÉLECTRONS, DISPOSITIF D'AFFICHAGE D'IMAGE, ET PUCE STRATIFI&Eacute - Google Patents

PROCÉDÉ DE FABRICATION DE STRUCTURES DE SUBSTRAT, STRUCTURE DE SUBSTRAT, ÉLÉMENT ÉMETTEUR D'ÉLECTRONS, PROCÉDÉ DE FABRICATION D'ÉLÉMENTS ÉMETTEUR D'ÉLECTRONS, SOURCE D'ÉLECTRONS, DISPOSITIF D'AFFICHAGE D'IMAGE, ET PUCE STRATIFI&Eacute Download PDF

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Publication number
WO2008001742A1
WO2008001742A1 PCT/JP2007/062744 JP2007062744W WO2008001742A1 WO 2008001742 A1 WO2008001742 A1 WO 2008001742A1 JP 2007062744 W JP2007062744 W JP 2007062744W WO 2008001742 A1 WO2008001742 A1 WO 2008001742A1
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WO
WIPO (PCT)
Prior art keywords
substrate
hole
manufacturing
substrate structure
insert
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Application number
PCT/JP2007/062744
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English (en)
Japanese (ja)
Inventor
Yusuke Taki
Masaomi Kameyama
Akira Tanaka
Tomoyuki Yasukawa
Masato Suzuki
Hyunjung Lee
Hitoshi Shiku
Tomokazu Matsue
Original Assignee
Nikon Corporation
Tohoku University
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Application filed by Nikon Corporation, Tohoku University filed Critical Nikon Corporation
Publication of WO2008001742A1 publication Critical patent/WO2008001742A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Definitions

  • Substrate structure manufacturing method substrate structure, electron-emitting device, electron-emitting device manufacturing method, electron source, image display device, and multilayer chip
  • the present invention relates to a substrate structure and a manufacturing method thereof, an electron-emitting device and a manufacturing method thereof, an electron source, an image display device, and a multilayer chip.
  • CNT Carbon nanotubes
  • CNTs are generally elongated fibrous (columnar) carbon materials having a diameter of about 0.5 to about OOnm and a length of about 1 to about 100 ⁇ m.
  • FEDs field emission displays
  • CNTs are mixed in a resin such as a thermoplastic polyimide resin, and a thermoplastic polyimide resin composition pellet is obtained. It is known that a thin film having a thickness of about 500 xm or less (for example, 100 xm, 20 ⁇ m, etc.) is manufactured by extrusion molding or the like.
  • an object of the present invention is to provide a substrate structure in which CNTs and other fine particles are uniformly dispersed and arranged in the whole or a part of the substrate, or arranged at an arbitrary position or region in the substrate, And a method of manufacturing the substrate structure.
  • a first step of preparing a substrate having at least one fine hole a second step of installing an electrode and immersing the substrate in a dispersion medium including a plurality of inserts, And a third step of applying a predetermined voltage to the electrode.
  • a substrate having a diameter of 5 nm to at least one hole in a range of ⁇ ⁇ ⁇ and a thickness in a range of 1 ⁇ m to lmm, and a conductive layer.
  • a substrate structure comprising: at least one insert inserted into the hole having a semiconductive property.
  • a substrate structure that emits electrons when a voltage is applied for example, A substrate structure comprising at least one substrate having at least one minute hole and at least one insert inserted into the minute hole as an electrode of the substrate structure. Is done.
  • CNTs and other conductors are inserted into the holes of the substrate in which a plurality of holes are provided in an array perpendicular to the substrate surface.
  • the conductor is accurately vertically aligned in the substrate, and a substrate structure (for example, an electron-emitting device) suitable as an electron source such as FED is damaged. It can be easily manufactured without letting it go.
  • a substrate structure for example, a conductive sheet
  • a substrate structure for example, a conductive sheet
  • the present invention it is possible to obtain a substrate structure in which CNTs, other fine particles, and the like are uniformly distributed in the whole or a part of the substrate, or are arranged in any position or region in the substrate. Can do.
  • FIG. 1 is a flowchart showing a method for manufacturing a substrate structure according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a substrate having a vertical through hole according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a state where an insert is inserted into the hole of the substrate shown in FIG.
  • FIG. 4 is a cross-sectional view showing a substrate having random through holes according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing a state in which an insert is inserted into the hole of the substrate shown in FIG.
  • FIG. 6 is a cross-sectional view showing a substrate having through holes obliquely crossed in a certain direction according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing a state where the insert is inserted into the hole of the substrate shown in FIG.
  • FIG. 8 is a cross-sectional view showing a substrate having random recessed holes according to an embodiment of the present invention.
  • FIG. 9 is a cross-sectional view showing a state where the insert is inserted into the hole of the substrate shown in FIG.
  • FIG. 10 is a cross-sectional view showing a substrate having a vertical depression hole according to an embodiment of the present invention.
  • FIG. 11 is a cross-sectional view showing a state where the insert is inserted into the hole of the substrate shown in FIG.
  • FIG. 12 is a diagram schematically showing a dielectrophoresis apparatus according to an embodiment of the present invention.
  • FIG. 13 is a diagram showing an electric field intensity distribution according to the embodiment of the present invention.
  • FIG. 14 is a diagram showing the relationship between applied frequency and dielectrophoretic force for metallic SWCNTs according to an embodiment of the present invention.
  • FIG. 15 is a diagram showing the relationship between applied frequency and dielectrophoretic force for semiconductor SWCNTs according to an embodiment of the present invention.
  • FIG. 16 is a graph showing conductivity and dielectric constant of metal SWCNTs and the like.
  • FIG. 17 is a diagram showing a schematic configuration of an FED according to an embodiment of the present invention.
  • FIG. 18 is a diagram (SEM photograph) showing a cross section of a substrate structure manufactured using the manufacturing method of the embodiment of the present invention.
  • FIG. 19 is an enlarged view of a part of FIG.
  • FIG. 20 is a diagram (SEM photograph) of a cross section of a substrate used in a manufacturing method according to an embodiment of the present invention, as seen in an oblique direction force.
  • FIG. 21 is a diagram (SEM photograph) of a cross section of a substrate structure manufactured using the manufacturing method according to the embodiment of the present invention, viewed from an oblique direction.
  • FIG. 22 is an enlarged view of a part of FIG.
  • FIG. 1 shows an outline of a method for manufacturing a substrate structure according to an embodiment of the present invention. It is a flowchart which shows an abbreviation.
  • This substrate preparation process includes a step of forming a hole in a thin plate or sheet or film base material (a plate-like body having no holes).
  • a substrate in which holes are formed at the same time as the manufacture of the substrate. In this case, the step of forming holes later is not necessary.
  • the base material of the substrate an insulating material may be used, and a semiconductive material may be used depending on the intended use.
  • the intermediate of 10 6 to the semi-conductive and electrical conductivity at room temperature is a metal insulator: refers to the nature of 10_ 7 SZM about a is material, the electrical conductivity of the semiconducting material and the insulating Less than the rate, the nature of the substance, and the conductivity described later refers to the nature of the substance greater than the electrical conductivity of the semiconductive substance.
  • a base material of the insulating substrate for example, a flexible transparent resin film such as polycarbonate, Teflon (registered trademark), polyethylene terephthalate, or the like can be used.
  • the base material of the substrate is not limited to such a transparent resin film having flexibility, and may not be flexible and may not be a resin that is not transparent.
  • an inorganic oxide such as aluminum oxide, magnesium oxide, titanium oxide, or silicon oxide may be used.
  • the material of the substrate (substrate base material) is appropriately selected according to the use of the substrate structure.
  • the thickness of the substrate (substrate base material) is selected according to the use of the substrate structure to be manufactured and the size of the insert described later, and is not particularly limited. Can do.
  • the term “flexibility” means that the function is not impaired even when a predetermined force that can be bent is applied to the substrate. Flexibility is evaluated by the bending resistance of the substrate. can do.
  • polycarbonate, Teflon (registered trademark) or poly (ethylene terephthalate) are preferred to have high resistance and bending resistance.
  • a method of forming a plurality of holes in the substrate base material used in the hole forming step various methods can be adopted depending on the diameter and direction of the hole to be formed, but a relatively small diameter (diameter 5 Onm
  • a method of etching by ion irradiation or fast neutron irradiation can be used.
  • the holes may be formed by an anodic oxidation method.
  • relatively large diameter (diameter In the case of about 50 nm or more)
  • a method of immersing in a predetermined etching solution by masking the portion other than the portion to be the hole may be used.
  • ion irradiation etching or the like may be performed while rotating and vibrating the substrate.
  • the diameter of the hole is selected according to the use of the substrate structure to be manufactured, the size and material of the insert to be described later, the dispersion medium in which the insert is dispersed, and the diameter is, for example, 5 nm to: lOO zm Can be of the order.
  • the cross-sectional shape of the hole to be formed is circular here, but may be an ellipse or other shapes.
  • the number of holes to be formed is arbitrarily set according to the use of the substrate structure to be manufactured, and may be one or more. Here, the number of holes is assumed to be plural (many).
  • the density (interval, etc.) in the case of forming a plurality of holes is appropriately selected in consideration of the use of the substrate structure to be manufactured and the strength of the substrate base material.
  • the hole to be formed may be a through hole penetrating the substrate or a recessed hole that does not penetrate the substrate.
  • the type and depth of the hole depends on the use of the substrate structure to be manufactured. It will be selected as appropriate.
  • the direction of the hole to be formed is selected according to the use of the substrate structure to be manufactured, etc., and may be substantially perpendicular to the substrate surface (substrate surface). You may be in contact.
  • each hole may be in the same direction (ie, parallel to each other) or in different directions.
  • the through hole may be formed by forming a recessed hole from one surface side of the substrate base material and performing back etching or the like from the other surface side.
  • all the holes may be randomly formed in an unspecified direction, or the plurality of holes may be divided into a plurality of gnoles, Within the group, the directions may be parallel to each other and different between the groups. Adjacent holes may or may not be in communication with each other. Cross communication means that the holes that contact P intersect each other and are connected to each other at the intersection.
  • the hole to be formed does not have to be linear, and all or part of the hole may be curved or bent.
  • all the holes 21 are formed so as to be orthogonal to the surface (substrate surface) of the substrate 20, FIG. As shown in the adjacent The holes 21 are formed in random directions so that the holes 21 are in cross communication with each other. As shown in FIG. 6, the adjacent holes 21 are obliquely crossed with respect to the substrate surface so that they are regularly cross connected. What was formed can be illustrated. As a specific example of a substrate having a plurality of recessed holes, as shown in FIG. 8, adjacent holes 21 are formed in a random direction so as to cross each other, as shown in FIG. An example is one in which all the holes 21 are formed so as to be orthogonal to the surface (substrate surface) of the substrate 20.
  • a step of immersing the substrate in a dispersion medium in which a plurality of inserted bodies are dispersed is performed (S12).
  • fine particles nano fine particles having conductive or semiconductive properties are used, and the fine particles may be fibrous substances such as CNTs depending on the use of the substrate structure to be manufactured.
  • Metal fine particles such as gold are used.
  • the CNTs may be single-walled CNTs (SWCNTs), double-walled CNTs (DWCNTs), triple-walled CNTs (3WCNTs), multi-walled CNTs (MWCNTs), or a mixture of these. Any of the semiconductor CNTs that have properties.
  • the size of the CNTs is, for example, a diameter of about 1 nm to several tens of nm and a length of about 1 ⁇ m.
  • the insert may be a cell, for example.
  • polymeric resins can be used as inserts.
  • the upper limit of the size of the insert is set in a range that is smaller than the hole in relation to the size of the hole formed in the substrate, and the lower limit of the size of the insert is too small. Since the brown motion of the insert is prioritized and dielectrophoresis may not be possible, the size exceeds that.
  • the insert material may be PbSe, PbTe, HgSe, HgTe, ZnS, ZnSe, CdS, CdSe, CdTe, CdS Se, GaAsP, InAsP, and GaInP.
  • Examples include nO, CaMnO, and La Ca MnO.
  • the solution ⁇ bodies are dispersed, pure water (deionized water) or pure water to surfactant (e.g., t W een20 (TM)) be used that was contained predetermined volume% it can.
  • the content of the tween 20 in a solution containing tween 20 in deionized water is, for example, 2
  • An example of the product% can be exemplified.
  • a surfactant to be contained in deionized water a nonionic surfactant, an ionic surfactant or the like may be used.
  • a method of immersing the substrate in a dispersion medium in which a plurality of inserts are dispersed in a solution a method of dropping droplets of the dispersion medium on the substrate is used.
  • the substrate is immersed in the dispersion medium 10 with a pair of electrodes (upper electrode 30, lower electrode 40) provided in the dielectrophoresis apparatus having the configuration shown in FIG.
  • a step of installing so as to sandwich the substrate 20 is performed (S13).
  • the electrodes 30 and 40 conductive glass formed by depositing metal oxide films (for example, IT O: Indium Tin Oxide) 32 and 42 on the surfaces of the glass substrates 31 and 41 by physical vapor deposition or chemical vapor deposition is used. be able to
  • An insulating film 43 having an opening 44 at a predetermined position is patterned on the metal oxide film 42 of the lower electrode 40, and the lower surface of the substrate 20 is connected to the lower electrode 40 via the insulating film 43. To be faced.
  • the position of the opening 44 of the insulating film 43 is set corresponding to the region where the hole into which the insert of the substrate 20 is to be inserted exists when the insert is inserted into the hole of the substrate 20 by dielectrophoresis described later. ing.
  • step of installing the force electrodes 30, 40 described as performing the step of installing the electrodes 30, 40 (S13) after the step of immersing the substrate in the dispersion medium (S12) (S13) After performing step 13), a step of immersing the substrate in the dispersion medium (S12) may be performed.
  • the AC power supply 50 of FIG. 12 is operated to apply an AC voltage between the electrodes 30 and 40 (S14).
  • a force in this case, a positive dielectrophoretic force
  • a force is applied to the inserted body in the dispersion medium 10 based on the principle of dielectrophoresis. Is inserted into the hole in the board 20.
  • the frequency of the AC voltage applied between the electrodes 30 and 40 is, for example, in the range of 1 kHz to 100 MHz, depending on the dielectric constant of the dispersion medium and the dielectric constant of the insert. It is set appropriately so that a positive dielectrophoretic force acts. It should be noted that the insert inserted into the hole 21 of the substrate 20 can be extracted outside the hole 21 by setting the frequency high so that a negative dielectrophoretic force acts. In addition, the maximum value of the applied frequency is not much If the frequency is too high, the dispersion medium may boil, so the frequency is set sufficiently lower than the boiling frequency.
  • the AC voltage applied between the electrodes 30 and 40 is set, for example, within a range of 1 to:! OOVpp.
  • the higher the applied voltage the greater the dielectrophoretic force acting on the insert, and the speed required to insert the insert into the hole in the substrate can be increased.
  • the electric field strength is too high, bubbles may be generated due to electrolysis, so it is necessary to set the voltage to a level that does not generate the bubbles.
  • the inserted body is a cell, if a high voltage is applied, the cell may be killed. Therefore, although the insertion requires a long time, a low voltage (for example, several micro to It is desirable to carry out at several millimeters Vpp).
  • a is the particle radius [m]
  • ⁇ is the dielectric constant [F / m]
  • the subscripts p and m are the particle and dispersion medium, respectively.
  • E is the electric field (V / m)
  • Re [f (x)] is an operator that extracts only the real part of the complex number f (x). ⁇
  • the content of Re [] in Equation (1) is called Clausius-Mossotti factor (CM factor: ⁇ ( ⁇ )) and represents the degree of polarization.
  • this CM factor depends on the conductivity and dielectric constant of the dispersion medium and particles, and the frequency to be applied, and takes values from -0.5 to 1.0.
  • the direction of dielectrophoretic force depends on the CM factor. That is, when the real part of the CM factor is positive, the dielectrophoretic force is positive, positive dielectrophoresis that induces particles to act on the larger electric field strength, and in the negative case The electrophoretic force becomes negative, and the negative dielectrophoretic force that induces particles acts on the weaker electric field strength.
  • FIG. 13 shows the result of the electric field intensity distribution by the finite element simulation performed by the inventors of the present invention.
  • 20 is a substrate
  • 21 is a hole in the substrate
  • 10 and 10 are dispersion media.
  • the electrodes 30 and 40 are located outside (upper and lower) of the dispersion media 10 and 10, respectively.
  • Fig. 13 shows a simulation result assuming that a DC voltage (10V) is applied between the electrodes. Even when an AC voltage is applied, it is considered that a similar electric field strength distribution is exhibited.
  • the figure shows that the electric field strength is weaker than the inside of the hole 21 in the dispersion medium outside the hole 21 (shown by the number 12) where the electric field strength is strong inside the hole 21 of the substrate 20 (shown by the number 11). Is shown.
  • the portion between the hole 21 where the electric field strength is strong and the adjacent hole 21 is the same as the inside of hole 21. This shows that the electric field strength is weaker than the outside of the hole 21 (indicated by reference numeral 12).
  • the electric field strength in the inside of the hole 21 of the substrate 20 is stronger than that in the dispersion medium outside the hole 21, so that it is dispersed in the dispersion medium by applying a positive dielectrophoretic force. It is understood that the inserted insert (particle) can be guided and inserted into the hole 21 of the substrate 20.
  • Figure 14 shows the relationship between the dielectrophoretic force (vertical axis) and the frequency (horizontal axis) when metallic SWCNTs are used as the particles to be dielectrophoresed and pure water containing tween20 is used as the dispersion medium. It is a figure which shows the result of lacing.
  • dispersion media pure water containing 2% by volume of tween20 and pure water containing 0.2% by volume of tween20. The former is shown by a one-dot chain line and the latter is used. It is shown with a solid line.
  • FIG. 15 shows the relationship between the dielectrophoretic force (vertical axis) and the frequency (horizontal axis) when semiconductor SWCNTs are used as the particles to be dielectrophoresed and pure water containing tween20 is used as the dispersion medium. It is a figure which shows the result of simulation. Two types of dispersion media are used: pure water containing 2 parts by volume of tween20 and pure water containing 0.2% by volume of tween20. The former is a dotted line and the latter is a solid line. Show. In addition, what is displayed in the upper right part in FIG. 15 is an enlarged view of the part having a frequency of 10 5 to 10 8 Hz.
  • a positive dielectrophoretic force is generated at a frequency of about 10 6 Hz to 10 7 ⁇ (1 ⁇ to 10 MHz) or less, and 1 MHz to : It is understood that a negative dielectrophoretic force is generated when the frequency is about 10 MHz or higher. This result is considered to have the same tendency with other semiconductor particles, which is the force of semiconductor SWCNTs.
  • the positive dielectrophoretic force is large when the frequency is about 10 4 Hz to l 0 z (10 kHz to 100 kHz) or less.
  • a frequency of about 10 kHz to 100 kHz or less it is preferable to apply a frequency of about 10 6 ⁇ (1 ⁇ ) or more. It is understood that when semiconductor particles are removed from the hole in the substrate, a frequency of about 10 6 ⁇ (1 ⁇ ) or more should be applied in order to exert a negative dielectrophoretic force.
  • a removal process for removing the electrodes 30, 40 is performed (S16), and a cleaning process is performed as a post-processing (S17).
  • the cleaning process the dispersion used for the dielectrophoresis Wash off the adhering material adhering to the substrate surface using a medium (a non-dispersed material). The cleaning step may be omitted if it is not necessary.
  • a heating and cooling process is performed (S18), and the series of processes is completed.
  • the heating and cooling process is, for example, gold as an insert
  • the metal particles are used, the metal particles inserted into the holes of the substrate are heated and melted to be integrated with each other, and the insert is fixed in the holes.
  • the heating / cooling process may be omitted if it is not necessary.
  • a drying process is performed in which the substrate after electrode removal or cleaning is naturally dried.
  • the vicinity of the opening of the hole in the substrate that is, the vicinity of the portion where the inner wall of the hole intersects the substrate surface (surface) is the same as the inside of the hole. Since the electric field strength is relatively high, the inserted body (particles) may remain in the vicinity of the opening of the hole and hinder the penetration of the inserted body into the hole. In order to cope with this problem, it is desirable to make the hole diameter of the board near the surface of the board (near the opening) larger than the inside of the board (smooth shape such as an arc shape or chamfered shape). .
  • etching may be performed using a predetermined etching solution after forming the hole in the substrate.
  • a predetermined etching solution For example, when aluminum oxide is used as the substrate, it is possible to obtain a desired shape by dissolving the vicinity of the opening of the hole by using an alkaline etching solution and washing after an appropriate period of time. .
  • an electroconductive film is manufactured using the manufacturing method of the board
  • a flexible transparent resin film such as polycarbonate or polyethylene terephthalate is used as the substrate (base material), and as shown in Fig. 4, a plurality of through-holes are formed randomly (disorderly) at an equal density.
  • the formation density is set in relation to the diameter of the through-holes so that the through-holes located next to or in the vicinity of each other are appropriately crossed and communicated with each other.
  • CNTs as a fibrous material are used here.
  • metal particles such as gold particles may be used.
  • the CNTs used here may be any of SWCNTs, DWCNTs, 3WC NTs, MWCNTs, and mixtures thereof, but it is desirable that they contain a large amount of metallic CNTs.
  • Examples of the dispersion medium include pure water, nonionic surfactant aqueous solution, and ionic surfactant aqueous solution. Either an organic solvent such as a liquid or an aqueous solution containing tween 20 may be used.
  • an organic solvent such as a liquid or an aqueous solution containing tween 20 may be used.
  • the diameter of the through hole should be set within the range of 10nm to: OOnm. On the other hand, if multiple CNTs are inserted into one through hole, the diameter of the through hole may be set to lOOnm or more.
  • the CNTs 22 are dispersed at a uniform density over the entire area of the substrate 20 without causing the CNTs 22 to agglomerate in a local area in the substrate 20. is doing.
  • the through holes 21 are connected to each other, the inserted NTs 22 are in contact with each other. Therefore, the entire substrate has conductivity.
  • the conductivity of the conductive film to be manufactured can be adjusted, and a conductive film having a desired conductivity can be obtained.
  • the diameter and the formation density of the through-holes 21 are locally changed in accordance with this, so that the conductivity having locally different conductivities is obtained. It is also possible to obtain a film.
  • the substrate 20 having the through holes 21 present in a disorderly manner as shown in FIG. 4 is used, but the substrate 20 having the through holes 21 formed with a predetermined tendency as shown in FIG. 6 is used.
  • a conductive film in which CNTs 22 are inserted into the through holes 21 can be obtained.
  • the substrate 20 having the through holes 21 substantially orthogonal to the surface (substrate surface) of the substrate 20 as shown in FIG. 2, as shown in FIG. It is possible to obtain a conductive film in which CNTs 22 are inserted, and this conductive film has conductivity in a direction perpendicular to the substrate surface and does not have conductivity in a direction along the substrate surface. It becomes an oriented conductive film.
  • the hole formed in the substrate is not limited to the through hole. As shown in FIG. 8, it is also possible to use a hole in which a depressed hole 21 having a predetermined depth is formed on the surface of the substrate 20. In this case, as shown in FIG. 9, a conductive film having conductivity only on the surface layer of the substrate can be obtained. You can.
  • a conductive film can be manufactured using the method for manufacturing a substrate structure according to the present embodiment, and the desired specifications can be obtained by appropriately changing and adjusting the specifications of the holes formed in the substrate. It is possible to easily produce a conductive film having the following performance.
  • the flexible transparent conductive film produced in this way can be used as a transparent electrode for electronic paper, a flexible display, a flat panel display, and the like. Note that, here, a transparent film having flexibility is used as the substrate, but it may or may not have flexibility. Further, in the above-described example, a conductive film having uniform conductivity can be obtained only in one or a plurality of local regions in the force film exemplifying a conductive film having conductivity uniformly throughout the substrate. it can.
  • an FED field emission display
  • an inorganic oxide substrate such as aluminum oxide is used as the substrate (base material).
  • a substrate in which through holes are formed at substantially equal intervals with respect to the substrate surface. Is used. The diameter of the through holes and the distance between the through holes may be adjusted according to the brightness and definition when used for FED.
  • CNTs as a fibrous material are used.
  • the CNTs used here may be SWCNTs, DWCNTs, 3WCNTs, MWCNTs, or a mixture of these, but in order to keep the in-plane electron emission density constant, CNTs aligned with a specific number of graph ensheets. It is desirable to use
  • any of organic solvents such as pure water, nonionic surfactant aqueous solution, ionic surfactant aqueous solution, and tween20-containing aqueous solution may be used.
  • This substrate is installed in the dielectrophoresis device of FIG. 12 according to the flowchart of FIG. 1 , and between the electrodes: L 00 kHz to i
  • the diameter of the through hole should be set within the range of 10-50 Onm. In addition, if only one CNTs is inserted into one through hole, the diameter of the through hole should be set in the range of 10nm to 100nm. This and Conversely, when inserting multiple CNTs into one through hole, the diameter of the through hole should be 100 ⁇ m or more.
  • the substrate structure (electron-emitting device) manufactured in this way is evenly spaced over the entire substrate without the CNT s22 being unevenly distributed in the local region in the substrate 20.
  • CNTsl 11 as an insert protrudes from the surface (upper surface and lower surface) of the substrate.
  • etching with an alkaline solution or the like to remove a predetermined amount of the surface of the substrate is performed.
  • an FED electron-emitting device can be manufactured by using the method for manufacturing a substrate structure according to this embodiment, and the diameters and arrangement intervals of holes formed in the substrate can be appropriately changed. Thus, an electron-emitting device having desired performance can be easily manufactured.
  • FIG. 17 is an enlarged view of a main part of the FED including the electron-emitting device manufactured by using the manufacturing method described above.
  • reference numeral 100 denotes an emitter substrate (emitter electrode).
  • a large number of CNT si 11 are inserted into the through-holes of the substrate manufactured using the manufacturing method described above.
  • the electron-emitting devices 110 are arranged in a matrix. These electron-emitting devices 110 can be fixed on the emitter substrate 100 by, for example, sticking using a conductive paste.
  • An insulating layer 120 is formed between the portions of the emitter substrate 100 where the electron-emitting devices 110 are disposed, and a gate electrode 130 is provided on the insulating layer 120.
  • Anode substrates 140 are provided at predetermined intervals through a spacer so as to face the emitter substrate 100.
  • the anode substrate 140 is a transparent electrode made of ITO or the like, and a phosphor layer (RGB phosphor) 141 is formed on the surface (inner surface) facing the electron-emitting device 110.
  • the portion between the emitter substrate 100 and the anode substrate 140 is in a vacuum state.
  • a DC voltage is applied between the emitter substrate 100 and the anode substrate 140 by the DC power supply 150, electrons are emitted from the electron-emitting device 110 and collide with the phosphor layer 141 to excite and emit light. Display is made.
  • An electron-emitting device manufactured using the method for manufacturing a substrate structure according to this embodiment CNTs are evenly distributed in the substrate without being unevenly distributed, and are aligned perpendicular to the substrate surface, so when used as an FED electron-emitting device, extremely good electron emission characteristics are achieved. FED having extremely good display performance with no variation in brightness and definition can be obtained. In addition, since the number of graph sheets of CNTs has been made uniform, this also makes it possible to make the brightness and life almost constant.
  • SiP system in package
  • SiP is a device (laminated chip) in which a plurality of LSIs (chips) including memory, CPU, and other circuits are stacked three-dimensionally and mounted in a single package.
  • LSIs LSIs
  • wire bonding is used for the connection between the layers, it is difficult to increase the speed and the number of wires is limited.
  • each layer (each chip, for example, the first chip and the second chip) of the multilayer chip can be three-dimensionally connected.
  • holes are formed in advance in portions to be via holes or through holes for interlayer connection.
  • metal CNTs or gold fine particles as the insert, and inserting the insert into the hole using the dielectrophoresis apparatus of FIG. 12, via holes or through holes for interlayer connection can be easily created. Is possible.
  • the signal wiring length can be shortened, the wiring resistance can be reduced, the number of wirings can be increased, and high performance and low power consumption can be achieved. It is also possible to mount the circuit components in such a way that each insert is connected to each other by inserting the insert into a circuit hole using semiconductor CNTs or other semiconductors and inserting it into the hole in the substrate.
  • CNTs are grown by being oriented perpendicular to the electrode substrate, and the CNTs bumps and the flip chip are joined.
  • the manufacturing conditions of the CNTs are limited by the properties of the electrode substrate. There is a possibility that the shape of CNTs that can be produced is limited, and the electrode substrate is exposed to high-temperature carbon deposition conditions, so that the material of the electrode substrate may deteriorate.
  • metal CNTs are inserted into the through holes of the substrate having the through holes as shown in FIG. 2, and the substrate as shown in FIG.
  • the cells are dispersed in a dispersion medium as an insert, and the insert is inserted into the hole using, for example, the dielectrophoresis apparatus shown in FIG. 12 on a substrate having a depression hole as shown in FIG.
  • a cell specimen as shown in FIG. 11 can also be created.
  • the applied voltage be as small as possible so as not to adversely affect the cells.
  • Example 1 Example 1
  • FIG. 18 and FIG. 19 are diagrams (SEM photographs) showing the results of experiments performed by the inventors of the present application, and FIG. 18 is a cross-sectional view of a substrate structure manufactured using the manufacturing method of the present embodiment.
  • FIG. 19 is an enlarged sectional view of the upper right 25 / im portion of FIG. This experiment was performed using a substrate having fine holes as a substrate, a dispersion medium in which the insert was dispersed in pure water, and the dielectrophoresis apparatus shown in FIG.
  • the material of the substrate is aluminum oxide (alumina), the substrate The thickness of the substrate is 60 ⁇ , the substrate size is 25 mm in diameter, and the hole diameter is 200 nm.
  • the insert is a gold microparticle (gold colloid) with a particle size of lOOnm.
  • a dispersion medium 100 / L in which the insert was dispersed in pure water at a dispersion concentration of 1.1 ⁇ 10 12 particles / mL was used.
  • As a method of immersing the substrate in the dispersion medium a method of dropping a droplet of the dispersion medium onto the substrate was used.
  • the AC voltage applied between the electrodes is 31 Vpp, and the frequency is 70 kHz.
  • the AC voltage was applied for 5 minutes.
  • the conductivity of gold is 45.2 X 10 6 S / m, and the dielectric constant of pure water is 81 ⁇ .
  • FIGS. 20 to 22 are diagrams (SEM photographs) showing the results of experiments conducted by the inventors of the present application, and FIG. 20 shows the substrate (inserted body inserted) used in the manufacturing method of the present embodiment.
  • FIG. 21 is an oblique image of the cross section of the substrate structure inserted with the insert using the manufacturing method according to the embodiment of the present invention, and FIG. It is the figure which expanded a part of. This experiment was carried out using a dielectrophoresis apparatus shown in FIG. 12, using a substrate having fine holes as a substrate, using a dispersion medium in which a filler was dispersed in pure water.
  • the substrate material is polycarbonate, the substrate thickness is 60 x m, the substrate size is 25mm in diameter, and the hole diameter is lOOnm.
  • the inclusions are MWCNTs.
  • a dispersion medium (20 ⁇ L) in which the filler was dispersed in pure water at a dispersion concentration of 5 mg / mL was used.
  • As a method of immersing the substrate in the dispersion medium a method of dropping a droplet of the dispersion medium onto the substrate was used.
  • the AC voltage applied between the electrodes is 20 Vpp, and the frequency is 55 kHz. The AC voltage was applied for 5 minutes.
  • MWCNTs are inserted from the surface of the substrate to the inside, and conductivity can be expressed throughout the substrate.
  • the MWCNTs were fixed in the substrate holes by natural drying.

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  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

La présente invention concerne un procédé de fabrication de structure de substrat comprenant une première étape (S11) consistant à préparer un substrat comportant au moins un trou fin, une deuxième étape (S12, S13) consistant à monter des électrodes et à immerger le substrat dans un milieu de dispersion contenant une pluralité d'insertions, et une troisième étape (S14) consistant à appliquer une tension prédéterminée aux électrodes.
PCT/JP2007/062744 2006-06-29 2007-06-26 PROCÉDÉ DE FABRICATION DE STRUCTURES DE SUBSTRAT, STRUCTURE DE SUBSTRAT, ÉLÉMENT ÉMETTEUR D'ÉLECTRONS, PROCÉDÉ DE FABRICATION D'ÉLÉMENTS ÉMETTEUR D'ÉLECTRONS, SOURCE D'ÉLECTRONS, DISPOSITIF D'AFFICHAGE D'IMAGE, ET PUCE STRATIFI&Eacute WO2008001742A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013118872A1 (fr) * 2012-02-10 2013-08-15 国立大学法人東北大学 Procédé de fabrication de structure de source d'électrons pour réseau d'émetteurs d'électrons en silicium nanocristallin
TWI727169B (zh) * 2017-05-18 2021-05-11 日商夏普股份有限公司 電子放出元件及其製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073504A (ja) * 2004-08-30 2006-03-16 Samsung Electro Mech Co Ltd カーボンナノチューブのセルフアセンブリングを利用した電界放出エミッタ電極の製造方法及びこれにより製造された電界放出エミッタ電極

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073504A (ja) * 2004-08-30 2006-03-16 Samsung Electro Mech Co Ltd カーボンナノチューブのセルフアセンブリングを利用した電界放出エミッタ電極の製造方法及びこれにより製造された電界放出エミッタ電極

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013118872A1 (fr) * 2012-02-10 2013-08-15 国立大学法人東北大学 Procédé de fabrication de structure de source d'électrons pour réseau d'émetteurs d'électrons en silicium nanocristallin
TWI727169B (zh) * 2017-05-18 2021-05-11 日商夏普股份有限公司 電子放出元件及其製造方法

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