WO2007144677A8 - Processus intégré cmos de fabrication de silicium monocristallin - Google Patents

Processus intégré cmos de fabrication de silicium monocristallin

Info

Publication number
WO2007144677A8
WO2007144677A8 PCT/HU2007/000053 HU2007000053W WO2007144677A8 WO 2007144677 A8 WO2007144677 A8 WO 2007144677A8 HU 2007000053 W HU2007000053 W HU 2007000053W WO 2007144677 A8 WO2007144677 A8 WO 2007144677A8
Authority
WO
WIPO (PCT)
Prior art keywords
sensor chip
integrated process
cmos integrated
monocrystalline silicon
fabricating
Prior art date
Application number
PCT/HU2007/000053
Other languages
English (en)
Other versions
WO2007144677A3 (fr
WO2007144677A2 (fr
Inventor
Antalne Adam
Istvan Barsony
Csaba Duecsoe
Magdolna Eroes
Tibor Mohacsy
Karolyne Payer
Eva Vazsonyi
Original Assignee
Mta Mueszaki Fiz Es Anyagtudom
Antalne Adam
Istvan Barsony
Csaba Duecsoe
Magdolna Eroes
Tibor Mohacsy
Karolyne Payer
Eva Vazsonyi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mta Mueszaki Fiz Es Anyagtudom, Antalne Adam, Istvan Barsony, Csaba Duecsoe, Magdolna Eroes, Tibor Mohacsy, Karolyne Payer, Eva Vazsonyi filed Critical Mta Mueszaki Fiz Es Anyagtudom
Priority to AT07733870T priority Critical patent/ATE449744T1/de
Priority to DE602007003470T priority patent/DE602007003470D1/de
Priority to EP07733870A priority patent/EP2027058B1/fr
Publication of WO2007144677A2 publication Critical patent/WO2007144677A2/fr
Publication of WO2007144677A3 publication Critical patent/WO2007144677A3/fr
Publication of WO2007144677A8 publication Critical patent/WO2007144677A8/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/22—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers
    • G01L5/226—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers to manipulators, e.g. the force due to gripping
    • G01L5/228—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers to manipulators, e.g. the force due to gripping using tactile array force sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)

Abstract

L'invention porte sur un processus de fabrication d'élément micromécanique au Si monocristallin intégré à un élément de circuit CMOS dans la technologie CMOS, caractérisé en ce qu'un domaine de seconde propriété conductrice est formé dans un substrat de première propriété conductrice, la seconde propriété conductrice étant l'inverse de la première propriété conductrice, puis simultanément ou immédiatement après cette opération un domaine de Si monocristallin est formé dans le substrat pour fabriquer un élément micromécanique. Après cela, un élément de circuit CMOS est fabriqué dans le substrat par le biais des étapes connues de la technologie CMOS puis l'élément de circuit, de même qu'une partie dudit domaine de fabrication de l'élément micromécanique qui portera l'élément micromécanique après sa fabrication sont recouverts d'une couche de protection. Puis, le commencement d'une étape de gravure au Si, poreuse, isotrope de la face avant depuis la surface exposée dudit domaine pour la fabrication de l'élément micromécanique et la continuation de cette étape de gravure jusqu'à ce que ladite partie qui portera l'élément micromécanique après sa fabrication devienne au moins sous-gravée dans son intégralité, permettent de créer une couche sacrificielle au Si poreuse, celle-ci renfermant au moins partiellement ladite partie qui portera l'élément micromécanique après sa fabrication. Lors de l'étape suivante, la surface exposée de ladite couche sacrificielle au Si, poreuse est passivée par application d'un mince film métallique sur celle-ci et des pièces de contact métalliques de l'élément de circuit sont formées par l'intermédiaire des phases connues de la technologie CMOS. Enfin, le mince film métallique qui recouvre la surface exposée de la couche sacrificielle au Si, poreuse est retiré, et l'élément micromécanique est formé par dissolution chimique de ladite couche sacrificielle au Si, poreuse.
PCT/HU2007/000053 2006-06-13 2007-06-13 Processus intégré cmos de fabrication de silicium monocristallin WO2007144677A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AT07733870T ATE449744T1 (de) 2006-06-13 2007-06-13 Monolithisch integrierte einkristalline mikromechanische elemente
DE602007003470T DE602007003470D1 (de) 2006-06-13 2007-06-13 Monolithisch integrierte einkristalline mikromechanische elemente
EP07733870A EP2027058B1 (fr) 2006-06-13 2007-06-13 Elements micromecaniques monocristallins intégrés monolithiquement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
HUP0600488 2006-06-13
HU0600488A HUP0600488A2 (en) 2006-06-13 2006-06-13 Method for producing micromechanical elements can be integrated into cmos technology, carrying monolith si and monolith sio produced by porous si micromanufacturing process

Publications (3)

Publication Number Publication Date
WO2007144677A2 WO2007144677A2 (fr) 2007-12-21
WO2007144677A3 WO2007144677A3 (fr) 2008-02-14
WO2007144677A8 true WO2007144677A8 (fr) 2008-04-10

Family

ID=89986840

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/HU2007/000053 WO2007144677A2 (fr) 2006-06-13 2007-06-13 Processus intégré cmos de fabrication de silicium monocristallin

Country Status (6)

Country Link
US (1) US8115240B2 (fr)
EP (1) EP2027058B1 (fr)
AT (1) ATE449744T1 (fr)
DE (1) DE602007003470D1 (fr)
HU (1) HUP0600488A2 (fr)
WO (1) WO2007144677A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP0600488A2 (en) * 2006-06-13 2008-05-28 Mta Mueszaki Fiz Es Anyagtudom Method for producing micromechanical elements can be integrated into cmos technology, carrying monolith si and monolith sio produced by porous si micromanufacturing process
TWI373450B (en) * 2009-07-29 2012-10-01 Pixart Imaging Inc Microelectronic device and method for fabricating mems resonator thereof
CA2772776C (fr) * 2009-09-01 2016-10-25 Blue-Zone Technologies Ltd. Adsorbant et systemes et procedes pour recuperation d'hydrocarbures halogenes
DE102011081033B4 (de) * 2011-08-16 2022-02-17 Robert Bosch Gmbh Verfahren zur Herstellung einer mikromechanischen Struktur und mikromechanische Struktur
CN103644985A (zh) * 2013-12-11 2014-03-19 江苏物联网研究发展中心 多量程cmos mems电容式压力传感器芯片
WO2018067136A1 (fr) * 2016-10-05 2018-04-12 Hewlett-Packard Development Company, L.P. Capteurs isolés
DE102017218883A1 (de) * 2017-10-23 2019-04-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikroelektromechanisches Bauteil sowie ein Verfahren zu seiner Herstellung

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745812A (en) * 1987-03-25 1988-05-24 The United States Of America As Represented By The Secretary Of The Army Triaxial tactile sensor
US5055838A (en) * 1988-12-09 1991-10-08 The Regents Of The University Of Michigan Silicon tactile imaging array and method of making same
US5237879A (en) * 1991-10-11 1993-08-24 At&T Bell Laboratories Apparatus for dynamically varying the resolution of a tactile sensor array
CA2203297A1 (fr) * 1991-12-13 1993-06-14 American Telephone And Telegraph Company Surfaces de travail intelligentes
US5760530A (en) * 1992-12-22 1998-06-02 The United States Of America As Represented By The Secretary Of The Air Force Piezoelectric tactile sensor
JP3399660B2 (ja) * 1994-10-06 2003-04-21 株式会社東海理化電機製作所 表面型の加速度センサの製造方法
US5604144A (en) * 1995-05-19 1997-02-18 Kulite Semiconductor Products, Inc. Method for fabricating active devices on a thin membrane structure using porous silicon or porous silicon carbide
SG96541A1 (en) * 1997-08-14 2003-06-16 Inst Of Microelectronics Design of a novel tactile sensor
SG68002A1 (en) * 1997-11-25 1999-10-19 Inst Of Microelectronics Natio Cmos compatible integrated pressure sensor
DE10064494A1 (de) * 2000-12-22 2002-07-04 Bosch Gmbh Robert Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist
US7521257B2 (en) * 2003-02-11 2009-04-21 The Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of Nevada, Reno Chemical sensor with oscillating cantilevered probe and mechanical stop
US7260980B2 (en) * 2003-03-11 2007-08-28 Adams Jesse D Liquid cell and passivated probe for atomic force microscopy and chemical sensing
US7357035B2 (en) * 2003-06-06 2008-04-15 The Board Of Trustees Of The University Of Illinois Sensor chip and apparatus for tactile and/or flow sensing
US7694346B2 (en) * 2004-10-01 2010-04-06 Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of Nevada Cantilevered probe detector with piezoelectric element
FR2883372B1 (fr) * 2005-03-17 2007-06-29 Commissariat Energie Atomique Dispositif de mesure de force par detection resistive a double pont de wheastone
US8127623B2 (en) * 2005-05-18 2012-03-06 Pressure Profile Systems Inc. Capacitive tactile tile sensor
US7661319B2 (en) * 2006-06-02 2010-02-16 The Board Of Trustees Of The University Of Illinois Micromachined artificial haircell
HUP0600488A2 (en) * 2006-06-13 2008-05-28 Mta Mueszaki Fiz Es Anyagtudom Method for producing micromechanical elements can be integrated into cmos technology, carrying monolith si and monolith sio produced by porous si micromanufacturing process

Also Published As

Publication number Publication date
EP2027058A2 (fr) 2009-02-25
US20090261387A1 (en) 2009-10-22
WO2007144677A3 (fr) 2008-02-14
WO2007144677A2 (fr) 2007-12-21
HU0600488D0 (en) 2006-08-28
HUP0600488A2 (en) 2008-05-28
EP2027058B1 (fr) 2009-11-25
ATE449744T1 (de) 2009-12-15
DE602007003470D1 (de) 2010-01-07
US8115240B2 (en) 2012-02-14

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