WO2007127607A1 - Implementation of avalanche photo diodes in (bi) cmos processes - Google Patents
Implementation of avalanche photo diodes in (bi) cmos processes Download PDFInfo
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- WO2007127607A1 WO2007127607A1 PCT/US2007/066316 US2007066316W WO2007127607A1 WO 2007127607 A1 WO2007127607 A1 WO 2007127607A1 US 2007066316 W US2007066316 W US 2007066316W WO 2007127607 A1 WO2007127607 A1 WO 2007127607A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to the medical imaging arts. It finds particular application to photodiodes (e.g., avalanche photodiodes) used in medical imaging systems and/or other applications.
- photodiodes e.g., avalanche photodiodes
- PET Positron Emission Tomography
- the scintillation crystal detects the gamma photons convert part of their energy to optical photons with energies in the blue part of the electromagnetic spectrum.
- These optical photons are subsequently detected by one or more photodetectors, typically photomultipliers.
- the number of detected photons indicates the actual energy of the gamma, which can be lower than 51 1 keV because of scatter in the patient body.
- the time of the gamma hit is defined by the rising edge of the photodetector signal.
- timing resolution in nanosecond range is sufficient for the coincidence logic to detect coincident hits, i.e. hits occurring in a time window about 5-8 ns wide.
- higher timing resolution of well below a nanosecond will enable the localization of the particular decay along the line of response defined by the two gamma hits. This additional information can be used to significantly increase the signal-to-noise ratio of the acquired image.
- photomultipliers are able to deliver timing resolution sufficient to implement time-of-flight PET (TOF-PET).
- Photomultipliers being vacuum devices, have several drawbacks: they are bulky, require high voltage, and do not work well in high magnetic fields. Photodiodes have a significant advantage over photomultiplier tubes in the detectors for PET and/or other diagnostic scanners; however, photodiodes have a disadvantage in that their response is neither linear nor homogeneous across their entire face.
- a new class of photodetectors, the silicon photomultiplier has emerged as a viable replacement to conventional photodetectors. Silicon photomultiplier properties are similar to their vacuum counterparts; however, they do not have the above-mentioned disadvantages.
- readout electronics can be integrated along the sensors. Assuming mass production, standard CMOS or BiCMOS silicon photomultipliers could potentially lead to cheaper photodetectors with the same or even better performance achieved by integrating digital readout electronics and significantly reducing the parasitics on the diode node.
- the amount of freedom of adaptation of the process is limited for the purposes of making a more ideal photodiode. For example, it is not straightforward to avoid the pn junction edge breakdown effect like discrete diodes.
- the basic building block of the silicon photomultiplicr is an avalanche photodiode (APD) driven in a Geiger mode. In this mode of operation, the APD is biased several volts over the breakdown voltage.
- APD avalanche photodiode
- the diode junction is sensitive to single photons.
- the electron-hole pair generated in the junction by the absorbed optical photon will lead to a steep increase of the diode current due to avalanche multiplication of carriers in the junction.
- the current is either passively or actively quenched to allow the diode to recover and prepare for the detection of another photon.
- the APD can stay in this unstable region for relatively long time, up to several milliseconds, until either thermally generated carriers or tunnelling carriers force it to break down and initiate a dark count. Therefore, the breakdown behavior of the diode junction is of paramount importance. The breakdown is determined by the avalanche multiplication of carriers in the junction, which is dependent on the (semi-) local electric field strength.
- FIGURE 7 illustrates such curved pn junction of an exemplary prior art APD.
- the device In order to make the APD sensitive over a large area, the device should be constructed in such a way that the depletion layer is equally sensitive over this area. For this purpose, one has to avoid edge effects.
- a number of techniques have been proposed to lower the field strength at the perimeter of the diode, leading to substantial decrease in the sensitive area of the diode.
- FIGURE 8 illustrates a technique often used to avoid breakdown at the edges in which extra (in this case p-type) diffusions are added, which make the breakdown voltage higher at the edges.
- FIGURE 9 illustrates another technique for avoiding edge breakdown in which a secondary implantation is included below the sensitive area to locally increase the field strength in the breakdown region.
- the resulting doping gradient at the edge of the structure increases the breakdown voltage and reduces the probability of edge breakdown.
- the present application provides a new and improved photodiode and method of fabricating the photodiode that overcomes the above-referenced problems and others.
- a radiation detector in accordance with one aspect, includes a semiconductor layer(s) formed on a substrate.
- the semiconductor layer(s) includes an n-doped region disposed adjacent to the substrate, and a p-doped region disposed adjacent to the n-doped region.
- a trench is formed within the semiconductor layer(s) and around the p-doped region and is filled with a material that reduces pn junction curvature at the edges of the pn junction, which reduces breakdown at the edges.
- a scintillator (30) is disposed over and optically coupled to the p-doped regions (18).
- the radiation detector further includes at least one conductive electrode that electrically contacts the n-doped region.
- Another advantage lies in increased photodetector detection efficiency. Another advantage resides in reduced photodetector or photodetector array package size. Still further advantages of the present invention will be appreciated to those of ordinary skill in the art upon reading and understand the following detailed description.
- FIGURE 1 is an exemplaiy medical imaging system.
- FIGURE 2 is a side sectional view of a photodiode fabricated using shallow tiench isolation technology to ieduce pn junction edge breakdown exhibited with conventional photodiodes.
- FIGURE 3 is a top-down view of the photodiode illustrated in FIGURE 2
- FIGURE 4 is a top-down view of an arrangement of a plurality of the photodiodes illustrated in FIGURE 2 mounted on a common substrate in an array or matrix configuration.
- FIGURE 5 is a side-view of the arrangement of photodiodes illustrated m FIGURE 4 having a scintillator or scintillation crystal mounted theieto
- FIGURE 6 is a method foi fabricating the photodiode of FIGURE 2.
- FIGURE 7 is an illustration showing a curved pn junction of an exemplary prior art avalanche photodiode.
- FIGURE 8 is an illustration showing a technique used increase the breakdown voltage at the edges of a pn junction by adding extra diffusion material.
- FIGURE 9 is an illustration showing a technique used increase the field strength in the bieakdown region through a secondary ion implantation proximate the sensitive area.
- FIGURE 2 depicts a side sectional view of the photodiode 10
- FIGURE 3 depicts a top-down view of the photodiode 10.
- the photodiode 10 includes a semiconductors layer(s) 12 (e g., silicon (Si), germanium (Ge), gallium arsenide (GaAs), etc.) formed (e.g., via photolithography, lithography, etc.) on a substrate 14 (e.g., a silicon, glass, sapphire, etc, wafer).
- the semiconductors layer(s) 12 includes an n-type (n- doped) well 16 disposed adjacent to a p- type (p- ⁇ - doped) region 18 that form a pn junction therebetween.
- Such regions are foimed via known techniques such as ion implantation (in which ions are implanted, thereby changing the physical properties semiconductor layer(s) 12), diffusion, and/or the like.
- a trench 20 is formed within the semiconductors laycr(s) 12 and surrounds the ⁇ -type region 18 and a portion of the n-type region 16.
- Various techniques such as etching are used to form the trench 20 in the semiconductor layer(s) 12.
- shallow trench isolation (STI) technology or the like is used to form the trench 20 in the semiconductor layer(s) 12.
- the trench 20 is formed (e.g., shaped) to substantially reduce the curvature at the edge of the pn junction (such as the curvature illustrated in the photodiodes shown in FIGURES 7-9), which reduces breakdown at the edges of diffusions through edge termination of the junction. That is, the trench 20 is formed with substantially vertical sidewalls such that the p- region 18 abruptly ends, instead of curving, to mitigate breakdown at the pn junction.
- the trench 20 is optionally oxidized and then subsequently filled with a material 22 such as a dielectric and/or a metal (e.g., to reduce crosstalk or cross contamination of light generated by neighboring photodiodes, etc.) via a deposition or other process.
- a material 22 such as a dielectric and/or a metal (e.g., to reduce crosstalk or cross contamination of light generated by neighboring photodiodes, etc.) via a deposition or other process.
- the trench 20 typically is formed and filled prior to the ion implantation process. Fringing fields at the pn junction and absorption by the oxide within the trench 20 decrease the electric fields at the edges of the photodiode 10.
- the trench 20 also widens the depiction layer at the edges as a result of the fringing field at these edges. This widening effect can cure or remedy processing effects that occur at the trench edges where p-typc dopants such as Boron or like are slightly sucked out and n-type dop
- depletion layer widening can be enhanced by minor modifications in the standard CMOS or BiCMOS processing flow with respect to the trench 20 processing.
- depletion layer widening can be enhanced or made stronger by using a dielectric material 22 that has a relatively high dielectric constant.
- suitable dielectrics 22 include, but are not limited to, a nitride (e.g., with a dielectric constant of about 7-8), an un-dopcd silicon (e.g., with a dielectric constant of about 12), Al 2 O 3 (e.g., with a dielectric constant of about 8), Ta 2 O;* (e.g., with a dielectric constant of about 22), and/or HfO 2 (e.g., with a dielectric constant of about 25).
- the trench 20 can additionally or alternatively be filled with a conducting material that can block light emitted by a neighboring avalanche photodiode and, through proper biasing, facilitate avoiding premature breakdown at the trench edges.
- the photodiode 10 also includes at least one conductive electrode (or n+ contact) 24 and an optional quenching resister 26 (at the p+ contact) that limits the amount of electrical current traveling through the photodiode 10, for example, to either actively or passively quench electrical current flow to allow the diode 10 to recover and prepare for the detection of another photon.
- the quenching resister 26 can be mounted to the photodiode via deposition, surface mount, solder, etc. technologies.
- the at least one electrode 24 is also used as the electrode for neighboring photodiodes, such as neighboring photodiodes within an array or matrix of photodiodes and/or a board with a plurality of such arrays or matrices.
- the photodiode 10 and variations thereof can be fabricated in any unmodified modern CMOS or BiCMOS process using deep or shallow trench isolation technology.
- the resulting photodiode 10 offers excellent electrical isolation between the anode and the cathode, requires only a minimum sensitive area to be sacrificed, and reduces optical crosstalk between neighboring photodiode cells.
- the resulting photodiode 10 can be reduced in size, which enables denser and reduced packaging size.
- the semiconductors layer(s) 12 is depicted as a rectangular volume; however, other shapes such as circular, elliptical, hexagonal, triangular, irregular, etc. are also contemplated.
- the photodiode 10 can be used in applications such as medical imaging systems, secure communications using photon entanglement, high-energy physics and astronomy, LADAR, etc. With medical imaging applications, the photodiode 10 can be used to detect light (e.g., at low photon fluxes) with high timing resolution in Gciger or other modes. Such applications include time-of-flight positron emission tomography (TOF-PET), single photon emission computed tomography (SPECT), optical mammography, spectral CT and time-resolved spectroscopy.
- TOF-PET time-of-flight positron emission tomography
- SPECT single photon emission computed tomography
- optical mammography spectral CT and time-resolved spectroscopy.
- FIGURE 4 illustrates a top-down view of a photodiode arrangement 28 in which MxN of the photodiodes 10, i.e., 10(,j., ..., 1 ⁇ M , ..., IOM ⁇ IO ⁇ , •• • > 10 I(2 , ..., 10 M ,2,
- each of the photodiodes 10 includes a pn junction formed at the interface between the n- well 16 (not visible) and the p+ region 18, i.e., 18 M , ..., 18 M , ..., 18 M , ⁇ , 18], 2 , ..., 18, )2 , .... 18 M(2 ,
- each of the photodiodes includes a suitably shaped trench 20, filled with a material 22, that surrounds each of the p+ regions 18 and the p+ contact 24, STI and/or other technology(s) are used to form each trench 20.
- the electrode 24 is shared by each of the MxN photodiodes 10 in the photodiode arrangement 28.
- more than one electrode 24 can be fo ⁇ ned within the photodiode arrangement 28, wherein one or more of the electrodes 24 are used by a single or multiple ones of the photodiodes 10, or each of the photodiodes 10 is associated with its own electrode 24.
- each of the photodiodes 10 in the photodiode arrangement 28 can be variously packaged in respect to its length, width, and/or depth.
- each of the photodiodes 10 is about 30 or 50 square microns or within a range from about 30 to 50 square microns.
- each of the photodiodes 10 is about 50 square microns
- about 400 or 20x20 of the photodiodes 10 can be formed on a 1 x.1 millimeter substrate,
- the depth of the N doped region is about 300 - 400 nanometers and the depth of the p doped region is about 100 nanometers.
- the photodiodes 10 can be rectangular in shape, as illustrated herein, or square, circular, elliptical, etc. in shape.
- FIGURE 5 illustrates a side view of the photodiode arrangement 28 in which a scintillator 30 is mounted (e.g., laminated) across at least one row (e.g., 10 M J, 10 M , 2 , ⁇ -, 10 M , N - I , 10 M , N ) of the photodiodes 10 and optionally covers a 1x1 millimeter array to define one detector element.
- the scintillator 30 includes a material (e.g., a crystal) that absorbs high energy (ionizing) electromagnetic or charged particle radiation and, in response, fluoresces photons at a characteristic wavelength, releasing the previously absorbed energy.
- Suitable scintillators include, but are not limited to, thallium doped sodium iodide crystals in gamma cameras used for nuclear medicine radioisotope imaging, bismuth germanate (BGO) coincidence detectors for detecting back-to-back gamma rays emitted upon positron annihilation in positron emission tomography machines, cerium-doped yttrium aluminum garnet (Ce: YAG) coating on the chip in some light- emitting diodes (LEDs), as well as LSO, YSO, LYSO, GSO, LGSO, etc.
- Each scintillator is optionally covered by a reflective layer to hold high photons in the crystal and to block crosstalk between adjacent crystals.
- each of the photodiodes 10 detects a single photon.
- the photon is absorbed, resulting in generation of an electron and/or electron hole. If the absorption occurs in the junction's depletion region, these carriers are swept from the junction, producing an electrical signal (e.g., a photocurrent) that is proportional to the energy of the detected photon.
- each carrier may be multiplied by avalanche breakdown, resulting in internal gain within the photodiode, which increases the effective responsivity of the device.
- FIGURE 6 illustrates a method for fabricating the photodiode 10. ⁇ n this example, a single photodiode 10 is formed; however, it is to be appreciated that the steps can be used to concurrently or serially form multiple photodiodes 10 to create the photodiode arrangement 28 shown in FIGURES 4 and 5, including an array or matrix of photodiodes, as described above.
- the resulting photodiode 10 can be used in various applications such as medical imaging applications in which the scintillator 30 is laminated to the photodiodes 10, and a plurality of detector boards (e.g., a plurality of printed circuit boards, each including a plurality of the photodiode arrangements 28) are used within a medical imaging scanner (e.g., SPECT, PET, CT, etc.) to detect light transmitted through or emitted from within a subject.
- SPECT SPECT, PET, CT, etc.
- the substrate 14 is procured (e.g., purchased, fabricated, etc.).
- the substrate 14 is a semiconductor wafer formed from silicon and/or other semiconductor materials such as glass, sapphire, etc.
- the semiconductor layer(s) 12 is formed over the substrate 14.
- Various known process technologies including deposition technologies such as physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE), atomic layer deposition (ALD), etc. can be used to form the semiconductor layer(s) 12 over the substrate 14.
- PVD physical vapor deposition
- CVD chemical vapor deposition
- ECD electrochemical deposition
- MBE molecular beam epitaxy
- ALD atomic layer deposition
- a removal process is used to form the trench 20, Such processes include deep or shallow trench isolation (STI) technology, etching (e.g., wet, dry, plasma, etc.), chemical-mechanical planarization (CMP), etc.
- the trench 20 is formed with substantially vertical side walls in order to prevent pn junction curvature and abruptly terminate the p-layer at the pn junction.
- the trench 20 is optionally oxidized.
- the trench 20 is filled with a material such as a dielectric (e.g., low k insulating materials) and/or metal.
- the properties of the semiconductor layer(s) 12 are modified.
- the semiconductor layer(s) 12 is doped to create the p-and n-doped regions using techniques such as diffusion or ion implantation.
- the doping process is followed by furnace anneal, rapid thermal anneal (RTA), or other processes that activate the implanted dopants.
- RTA rapid thermal anneal
- the scintillator 30 is mounted over the photodiode 10.
- the doping step 42 is performed prior to the trenching step 36.
- each detector includes one scintillator 30, the n- well 16 and the array p+ regions 18 separated by the trench 20 filled with the material 22, and an associated one or more of the electrodes 24, which is shared by the neighboring photodiodes 10.
- the medical imaging system 44 is a timc-of-fiight positron emission tomography (TOF-PET).
- TOF-PET timc-of-fiight positron emission tomography
- other medical imaging systems such as conventional PET, single photon emission computed tomography (SPECT), optical mammography, spectral CT, etc. are also contemplated herein.
- the imaging system 44 includes a plurality of rings of the radiation detectors 46 (e.g., hundreds, thousands, etc.) arranged around an imaging region 48 to detect radiation events (e.g., gamma rays) emitted from within the imaging region 48.
- Each of the radiation detectors 46 includes a plurality of the photodiodes 10 adjacent to one or more of the scintillators 30 and configured in an array or matrix.
- the plurality of radiation detectors 46 can be arranged in multiple rings (e.g., two, ten, a hundred, etc.) of detectors along an axial direction.
- the system 44 further includes a support mechanism 50 for positioning a patient or an imaging subject in the imaging region 48.
- the support mechanism 50 is linearly movable in an axial direction generally transverse to the radiation detectors 46. ⁇ n preparation for imaging with the system 44, a suitable radiopharmaceutical is administered to the subject that will be scanned, and the subject is positioned within the imaging region 48. The radiopharmaceutical undergoes radioactive decay, which results in an emission of positrons. Each positron interacts with one or more nearby electrons and annihilates, which produces two oppositely directed (180 degrees) gamma rays having energies of about 51 1 keV each.
- the two oppositely directed gamma rays may strike opposing detectors at substantially the same time, i.e., coincidently when positions originate equidistant from the pair of detectors. There is a slight time offset between coincident events due to the different travel distances.
- Each of the scintillation crystals 30 produces a scintillation of light when struck by a radiation event such as a gamma ray produced from positron annihilation.
- the light produced by each crystal is received by one or more of the photodetectors 10 that are optically coupled to it.
- Each of the photodetectors 10 converts the light into a representative electrical signal.
- Each detector may also be associated with local and/or remote processing circuitry (not shown) that provides signal amplification, filtering, conditioning, etc.
- the conversion from gamma photon to light photons and light (photons) to electrical signal, as well as any other processing, can introduce different time delays into each of the resulting signals.
- the electrical signals are conveyed to a converter 52, which digitizes and time stamps the signals.
- a pair detector 54 identifies pairs of substantially simultaneous or coincident gamma ray detections belonging to corresponding electron-positron annihilation events.
- This processing can include, for example, energy windowing (e.g., discarding radiation detection events outside of a selected energy window disposed about 51 1 keV) and coincidence-detecting circuitry (e.g., discarding radiation detection event pairs temporally separated from each other by greater than a selected time-window).
- energy windowing e.g., discarding radiation detection events outside of a selected energy window disposed about 51 1 keV
- coincidence-detecting circuitry e.g., discarding radiation detection event pairs temporally separated from each other by greater than a selected time-window.
- a line of response (LOR) processor 56 processes the spatial information for each pair of events to identify a spatial LOR connecting the two gamma ray detections. Since the two gamma rays emitted by a positron-electron annihilation event are oppositely spatially directed, the electron-positron annihilation event is known to have occurred somewhere on the LOR.
- the radiation detectors 46 and the time stamping of the converter 52 have sufficiently high temporal resolution to detect a time-of-flight (TOF) difference between the two substantially simultaneous gamma ray detections.
- a TOF processor 58 analyzes the time difference between the times of each event of the coincident pair to localize the positron-electron annihilation event along the LOR.
- the result includes a set of histoprojections.
- the histoprojections are conveyed to a reconstruction engine 60 that reconstructs the histoprojections to generate one or more images using a suitable reconstruction algorithm such as filtered backprojection, iterative backprojection with correction, etc.
- the raw data and/or reconstructed images are stored in storage 62, and can be displayed, printed, archived, filmed, processed, transferred to another device, displayed on a monitor 64, etc.
- a radiologist or other suitable clinician can use the raw data and/or reconstructed image to control the TOF-PET system 44, diagnose the subject, etc.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Nuclear Medicine (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Amplifiers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
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Priority Applications (5)
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JP2009507887A JP5437791B2 (en) | 2006-04-25 | 2007-04-10 | (Bi) Manufacturing method of avalanche photodiode by CMOS process |
DE602007012854T DE602007012854D1 (en) | 2006-04-25 | 2007-04-10 | IMPLEMENTATION OF AVERAGE PHOTODIODES IN (BI) CMOS PROCEDURES |
US12/298,206 US7759650B2 (en) | 2006-04-25 | 2007-04-10 | Implementation of avalanche photo diodes in (Bi)CMOS processes |
EP07760388A EP2013916B1 (en) | 2006-04-25 | 2007-04-10 | Implementation of avalanche photo diodes in (bi) cmos processes |
AT07760388T ATE500621T1 (en) | 2006-04-25 | 2007-04-10 | IMPLEMENTATION OF AVALANCHE PHOTODIODES IN (BI) CMOS PROCESSES |
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US74554906P | 2006-04-25 | 2006-04-25 | |
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US (1) | US7759650B2 (en) |
EP (1) | EP2013916B1 (en) |
JP (2) | JP5437791B2 (en) |
CN (2) | CN104538459A (en) |
AT (1) | ATE500621T1 (en) |
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Also Published As
Publication number | Publication date |
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JP2014045198A (en) | 2014-03-13 |
CN101432893A (en) | 2009-05-13 |
US7759650B2 (en) | 2010-07-20 |
US20090065704A1 (en) | 2009-03-12 |
JP5771252B2 (en) | 2015-08-26 |
EP2013916A1 (en) | 2009-01-14 |
CN104538459A (en) | 2015-04-22 |
JP5437791B2 (en) | 2014-03-12 |
ATE500621T1 (en) | 2011-03-15 |
JP2009535821A (en) | 2009-10-01 |
EP2013916B1 (en) | 2011-03-02 |
DE602007012854D1 (en) | 2011-04-14 |
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