WO2007104206A1

WO2007104206A1 - An integrated three-dimensional magnetic field sensor and a manufacturing method thereof

Info

Publication number: WO2007104206A1
Application number: PCT/CN2006/003797
Authority: WO
Inventors: Xiufeng Han; Ming Ma; Qihang Tan; Lei Wang; Wuyan Lai; Wenshan Zhan
Original assignee: Institute Of Physics, Chinese Academy Of Sciences
Priority date: 2006-03-10
Filing date: 2006-12-31
Publication date: 2007-09-20
Also published as: CN101034145A; CN101034145B

Abstract

An integrated three-dimensional magnetic field sensor and a manufacturing method thereof comprise fabricating three single-dimensional magnetic field sensors by using a method of manufacturing film and photolithography, arranging the three single-dimensional magnetic field sensors on three adjacent faces of a cube (9) of non-magnetic material respectively, and adjacent planes of two single-dimensional magnetic field sensors perpendicular to each other. The magnetic multilayer film of the single-dimensional magnetic field sensor includes an anti-ferromagnetic layer (31), a pinned layer (32), a non-magnetic layer (33) and a free layer (34) in turn, a top electrode (4) and a closed superconducting loop are mounted on the free layer (34) in turn. The closed superconducting loop has a section with a width of 1~100µm and the length of the section is 10~200µm, the other sections have a width of 1~100mm, the location of the narrow section coincides with the location of the lower magnetic field sensor and the length direction is perpendicular to the magnetization direction of the pinned layer of the magnetic field sensor, and input terminals (Ui) of the three single-dimensional magnetic field sensors are connected in series.

Description

Three-dimensional integrated composite magnetic field sensor and preparation method thereof

The invention belongs to the field of sensor devices, and in particular to an integrated three-dimensional superconducting composite magnetic field sensor, a preparation method thereof, and a use for detecting a weak magnetic field in a three-dimensional direction. Background technique

Magnetic field sensors have a wide range of commercial applications, such as linear or toroidal encoders, geomagnetic field magnetometers, and the like. A common magnetic field sensor is currently based on the Hall effect to sense magnetic fields in the range of 100 Oe to 1000 Oe. Another common magnetic field sensor is based on the magnetoresistance (MR) effect in semiconductor or ferromagnetic materials to sense relatively small magnetic fields and magnetic fields at relatively long distances. A magnetic field sensor made of an anisotropic magnetoresistive (AMR) material and a giant magnetoresistance (GMR) material can sense a magnetic field of less than 50 Oe, for example, in US Patent No. 5,247,278 to Honeywell. One such magnetic field sensor is described.

Usually, an important use of the magnetic field sensor is to measure the earth's magnetic field, but the earth's magnetic field is only about 0.5Oe, and the existing magnetic field sensor has poor precision, and the magnetic field and the magnetic field below the magnitude of the earth's magnetic field cannot be well sensed. Summary of the invention

The object of the present invention is to overcome the poor measurement accuracy of the existing magnetic field sensor, to effectively measure the geomagnetic field (about 0.5 Oe), and to effectively measure the magnetic field defect lower than the geomagnetic field, thereby providing a magnetic coupling in the tunnel. A composite magnetic field sensor that produces a superconducting loop structure on a resistive (TMR), or giant magnetoresistance (GMR) material layer that accurately measures weak magnetic fields.

It is also an object of the present invention to provide a method of fabricating a three-dimensional integrated composite magnetic field sensor.

The object of the present invention is achieved by the following technical solutions:

The three-dimensional integrated composite magnetic field sensor provided by the invention comprises a substrate 1, a buffer layer 2 deposited on the substrate 1, and a bottom electrode 8 on the buffer layer 2, and a magnetic field measuring unit sequentially deposited on the bottom electrode 8 ( The magnetic multilayer film unit 3, and the top electrode 4 thereon constitute a one-dimensional magnetic field sensor; characterized in that it further comprises a hexahedral non-magnetic material block 9, and an insulating layer 5 is deposited on the top electrode layer, superconducting Material layer: The three-dimensional magnetic field sensor has three, three identical one-dimensional magnetic field sensors respectively fixed on three adjacent surfaces of the non-magnetic material block 9, two adjacent one-dimensional magnetic field sensors The planes of the magnetic multilayer film are in turn an antiferromagnetic layer 31, a pinning layer 32, a nonmagnetic layer 33 and a free layer 34, wherein the magnetization directions of the pinning layer 32 and the free layer 34 are perpendicular to each other. The top electrode 4 is sequentially disposed on the free layer 34, and the insulating layer 5 and the superconducting material layer are sequentially deposited on the free layer 34; the superconducting material layer is etched into a circular or rectangular boss with a width (with There is a closed superconducting loop), the circular or rectangular boss of the superconducting material has a length of 5 mm - 1000 mm, wherein a portion of the narrow portion 6' has a width of 1 to 100 μm, and the length of the narrow portion 6' is It is 10 to 200 μm _{; the} remaining portion (width portion 6) has a width of ~100 mm; wherein the position of the narrow portion 6' coincides with the position of the magnetic field measuring unit 3 below, and the length direction is pinned with the magnetic field measuring unit The magnetization direction of the layer is perpendicular; the input terminals Ui of the three one-dimensional magnetic field sensors are connected in series, and the constant current I is input from the output terminal U of each one-dimensional magnetic field sensor. The output signal is measured to obtain the integrated three-dimensional superconducting composite magnetic field sensor of the present invention.

In the above technical solution, the bottom electrode 8 and the top electrode 4 are both "concave" or elongated, and further include making the area of the ends of the two legs of the electrode larger than the middle, so that it is convenient to connect with an external circuit. The bottom electrode 8 and the top electrode 4 are metals having a low electrical resistivity, preferably Au, Cu, and Ta, and have a thickness of 10 to 500 nm.

In the above technical solution, the hexahedral non-magnetic material block 9 is made of Cu, Al, stainless steel or other organic materials, such as polytetrafluoroethylene or the like.

In the above technical solution, the constituent material of the free layer 34 is a ferromagnetic metal having a high spin polarization and a low coercivity, and an alloy thereof, preferably Co, Ni, Fe, Co-Fe (eg: Co ₇₅ Fe ₂₅ , Co ₉₀ Fe ₁₀ ), Co-Fe-B (eg: Co ₄₀ Fe ₄₀ B ₂₀ , Co ₆₀ Fe ₂₀ B ₂ o), Co-Fe-Si-B or Ni-Fe alloy (eg: Ni ₈₁ Fe ₁₉ ), having a thickness of 1.0 to 10 nm.

In the above technical solution, the insulating layer 5 is A1 ₂ 0 ₃ or Si0 ₂ and has a thickness of 10 to 500 nm. In the above technical solution, the superconducting material layer 6 is Nb, Sn, Pb, In, Ta, Nb-Ti, Mo-Re,

V ₃ Si NbN, Nb ₃ Sn, b ₃ Ge, Pb-In-Au, Pb-Au, MgB ₂ and oxide YBaCuO, etc., have a thickness of 10 to 500 nm.

In the above technical solution, the antiferromagnetic layer 31 is an alloy having antiferromagnetic properties, preferably Ir-Mn, Fe-Mn, Pt-Mn, or Cr-Mn alloy, having a thickness of 2 to 20 nm;

In the above technical solution, the pinning layer 32 is a ferromagnetic metal having a high spin polarizability, such as Fe, Co, Ni and alloys thereof, preferably a Co-Fe alloy, a Ni-Fe alloy, and an amorphous CoFeB alloy, thickness 2~20 nm.

In the above technical solution, the non-magnetic layer 33 is made of an insulating material such as A1 ₂ 0 ₃ , MgO, A1N, Ta ₂ 0 ₅ , ZnO or Ti0 ₂ and has a thickness of 0.5 to 5 nm _; or Cu, Cr, Metal materials such as V, Nb, Mo, Ru, Ta, W, Re, Rh, Ir, etc., have a thickness of 0.4 to 10 nm.

In the above technical solution, the substrate 1 is a Si substrate or a Si-SiO ₂ substrate, and has a thickness of 0.3 to 1 mm. In the above technical solution, the buffer layer 2 is a metal material having a large electrical resistance, and is preferably Ta, Ru, Cr, Pt and has a thickness of 3 to 10 nm.

The method for preparing an integrated three-dimensional superconducting composite magnetic field sensor provided by the invention comprises the following steps -

1) Select substrate: Select Si or Si-SiO ₂ wafer as the substrate, and clear it by conventional semiconductor ultrasonic cleaning process. After washing and drying, a buffer layer is deposited on the substrate in a magnetron sputtering apparatus, and a sample after depositing the buffer layer is used; the buffer layer is a metal material having a large electrical resistance, preferably Ta, Ru, Cr, Pt, thickness is 3~10 nm _;

2) Making the bottom electrode 8: On the sample prepared in the step 1), the bottom electrode 8 layer 8 is deposited by a magnetron sputtering device, and then subjected to conventional semiconductor photolithography, after being coated, pre-baked and exposed, developed. Drying after fixing, and etching the bottom electrode 8 into a concave shape or an elongated shape by ion etching; further comprising making the area of the ends of the two legs of the electrode larger than the middle;

3) preparing a magnetic field measuring unit on the sample prepared in the step 3): depositing the antiferromagnetic layer 31, the pinning layer 32, and the non-magnetic layer of the magnetic field measuring unit 3 on the bottom electrode 88 by using a magnetron sputtering device 33 and the free layer 34; when depositing the antiferromagnetic layer, the pinning layer, and the free layer, an inductive magnetic field of 50 to 5000 Oe is applied; wherein the direction of the induced magnetic field applied to the antiferromagnetic layer and the pinned layer is the same, applied The direction of the magnetic field induced by the free layer is perpendicular to the direction of the induced magnetic field applied to the antiferromagnetic layer and the pinned layer, and finally the magnetization directions of the pinned layer and the free layer are both in the plane of the substrate, and the magnetization directions are perpendicular to each other;

4 ym ² 〜 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 100mm ² , finally immersed in acetone to remove glue;

5) fabricating the top electrode 4: depositing a top electrode layer on the magnetic field measuring unit 3 by using a magnetron sputtering device; then using a conventional semiconductor micromachining process to process the top electrode 4 into a "concave" shape or an elongated strip shape; Also included that the area of the ends of the two legs of the electrode is made larger than the middle;

6) depositing an insulating layer: using an magnetron sputtering device, depositing an insulating layer 5 around the bottom electrode 88, the magnetic field measuring unit 3 and the top electrode 44;

7) fabricating a superconducting layer: depositing a superconducting material layer on the insulating layer 5 obtained in step 6) by using a magnetron sputtering device; then processing the superconducting material layer into a width with a conventional semiconductor processing process a circular or rectangular boss (having a closed superconducting loop) having a length of 5 mm - 1000 mm, wherein a portion of the narrow portion 6' has a width of 1 to 100 μm, The length is 10 to 200 μm _{; the} remaining portion has a width of 1 to 100 mm; wherein the position of the narrow portion 6' coincides with the position of the magnetic field measuring unit 3 below, and the length direction and the magnetization direction of the pinning layer of the magnetic field measuring unit Vertically, a one-dimensional magnetic field sensor is fabricated, and three identical one-dimensional magnetic field sensors are produced;

8) Step 7) to obtain three identical one-dimensional magnetic field sensors, respectively fixed on three adjacent faces of a hexahedral non-magnetic metal material block 9 (shown in Figure 6), and two planes of three magnetic field sensors Two vertical, then the input terminals Ui of the three magnetic field sensors are connected in series, and the constant current I is input from the output terminal U of each one-dimensional magnetic field sensor. The output signal is measured to obtain the integrated three-dimensional superconducting composite magnetic field sensor of the present invention.

In the above technical solution, the hexahedral non-magnetic material block 9 is Cu, Al, stainless steel or the like. Organic materials, such as: PTFE.

In the above technical solution, the constituent material of the free layer 34 is a ferromagnetic metal having a high spin polarization and a low coercivity, and an alloy thereof, preferably Co, Ni, Fe, Co-Fe (eg: Co ₇₅ Fe ₂₅ , Co ₉₀ Fe ₁₀ ), Co-Fe-B (eg: Co ₄₀ Fe ₄₀ B ₂₀ , Co ₆ oFe ₂₀ B ₂₀ ), Co-Fe-Si-B or Ni-Fe alloy (eg Ni ₈₁ Fe ₁₉ ), thickness 1.0~10 nm.

In the above technical solution, the insulating layer 5 is A1 ₂ 0 ₃ or Si0 ₂ and has a thickness of 10 to 500 nm. In the above technical solution, the superconducting material layer 6 is Nb, Sn, Pb, In, Ta, Nb-Ti, Mo-Re, V ₃ Si, NbN, Nb ₃ Sn, Nb ₃ Ge, Pb- In-Au, Pb-Au, MgB _2, and oxide YBaCuO, etc., have a thickness of 10 to 500 nm. '

In the above technical solution, the antiferromagnetic layer in step 3) is an alloy having antiferromagnetic properties, preferably Ir-Mn, Fe-Mn, Pt-Mn or Cr-Mn, having a thickness of 2 to 20 nm;

In the above technical solution, the pinning layer in the step 3) is a ferromagnetic metal having a relatively high spin polarization, and is Fe, Co, Ni and an alloy thereof, preferably a Co-Fe alloy, a Ni-Fe alloy, and a crystalline CoFeB alloy having a thickness of 2 to 20 nm;

In the above technical solution, the non-magnetic layer 33 is made of an insulating material such as A1 ₂ 0 ₃ , MgO, A1N, Ta ₂ 0 ₅ , ZnO or Ti0 ₂ and has a thickness of 0.5 to 5 nm; or Cu, Cr, V is used. Metal materials such as Nb, Mo, Ru, Ta, W, Re, Rh, Ir, etc., having a thickness of 0.4 to 10 nm;

In the above technical solution, the bottom electrode 8 and the top electrode 4 are metals having a small specific resistance, preferably Au, Cu, Ta, etc., and have a thickness of 10 to 500 nm.

The integrated three-dimensional superconducting composite magnetic field sensor provided by the invention can be used for detecting a weak magnetic field, and the cross-section and magnetic field direction at the magnetic field measuring unit 3 are as shown in Fig. 3. When the sensor is operating, input a constant current source or a constant voltage source at the input after series connection, and measure the output voltage at the output Uo of each one-dimensional sensor. When there is an external magnetic field, a current will be generated in the superconducting loop, and the current in the loop generates a magnetic field around the superconducting. In the portion where the loop width is thin, due to the large current density, a magnetic field is generated several orders of magnitude higher than the external magnetic field, and the magnetic field measuring unit measures the induced magnetic field. When the external magnetic field changes, the induced magnetic field changes accordingly, and the magnetic resistance of the magnetic field measuring unit changes at the same time, causing the output voltage to change. The output voltage is linearly related to the change of the external magnetic field within a certain range, and the magnitude of the external magnetic field can be obtained from the output voltage.

The advantages of the invention are:

Compared with the existing magnetic field sensor, the integrated three-dimensional superconducting composite magnetic field sensor provided by the invention is fixed on three adjacent faces of a hexahedral non-magnetic block by using three identical one-dimensional magnetic field sensors. It is convenient to measure the strength of three magnetic fields in mutually perpendicular directions to achieve the purpose of sensing a three-dimensional magnetic field.

The second point of the present invention is also applied to a magnetic field measuring unit and an insulating layer to form a superconducting closed loop, external magnetic field energy An induced current is generated in the loop, and the current generates an amplified magnetic field in a portion where the loop width is thin, which can be detected by the magnetic field measuring unit, and functions to amplify the magnetic field. The superconducting composite magnetic field sensor has high resolution, and the amplification of the superconducting loop can increase the magnetic field resolution of the present invention by 100 to 1000 times than that of the general magnetoresistive sensor, and can be used to measure the geomagnetic field or even smaller. magnetic field.

At the same time, the sensor provided by the present invention is a three-dimensional magnetic field sensor, and has a wider application range than a general one-dimensional sensor. DRAWINGS

1 is a top plan view of a one-dimensional magnetic field sensor in a composite magnetic field sensor provided by the present invention;

2 is a schematic diagram of a bottom electrode 8, a magnetic field measuring unit and a top electrode 4 of a one-dimensional magnetic field sensor according to the present invention. FIG. 4 is a schematic diagram of a cross-section and a magnetic field direction of a magnetic field measuring unit 3 of a composite magnetic field sensor according to the present invention. FIG. Schematic diagram of the superconducting loop shape (square ring);

Figure 5 is a schematic view showing the shape of another superconducting loop of the composite magnetic field sensor of the present invention (ring);

Figure 6 is a schematic view showing the assembly of the composite magnetic field sensor of the present invention;

Figure 7 is a schematic diagram of assisting in calculating the accuracy of the sensor magnetic field measurement;

Picture description:

1-substrate 2-buffer layer 3 magnetic field measuring unit

4-top electrode 5-insulation 6-width wide section

6, - narrow width part 8 bottom electrode 9-hexahedral non-magnetic material block

31 - antiferromagnetic layer 32 - pinned layer 33 - non-magnetic layer

34 - free layer

The magnetic field sensor structure of the present invention will be described in detail below with reference to the accompanying drawings and specific preparation methods.

1), select a Si-Si0 ₂ substrate with a thickness of 1 mm as the substrate 1, and clean it by a conventional semiconductor cleaning process, for example, ultrasonic cleaning in an organic solvent such as acetone or alcohol, and then dried, then placed in a magnetron splash. meter shot depositing 5 nm thick Ta buffer layer 2 on the substrate, wherein the vacuum deposition conditions than 5xl (T ⁷ Pa, the deposition rate was 0. 1 nm / s, under an argon pressure of 0. 07Pa is deposited;

2), in the magnetron sputtering apparatus, depositing a 10 nm thick Cu bottom electrode layer on the buffer layer 2 under the same conditions; then, using a conventional semiconductor photolithography process, coating, pre-baking, and utilizing A lithographic plate for processing a pattern, after exposure on an ultraviolet exposure machine, developing, fixing, post-baking, and etching the bottom electrode layer by ion etching The bottom electrode 8 of the "concave" shape (as shown in FIG. 2), wherein the two ends of the two long legs are extended and then formed into a square shape, or the direction can be changed to make a bend, and the end area is large to facilitate connection with an external circuit;

3) depositing the layers of the magnetic field measuring unit 3 on the bottom electrode 8 in the same condition on the magnetron sputtering apparatus, firstly depositing 10 nm of IrMn as the antiferromagnetic layer 31, and then 4.0 nm Co ₇₅ Fe _{25 was} used as the pinning layer 32, 1.0 nm of Al ₂ O ₃ as the nonmagnetic layer 33, and 4.0 nm of Co ₇₅ Fe ₂₅ as the free layer 34. When the antiferromagnetic layer, the pinning layer and the free layer are deposited, the magnetic field induced by lOOOe is added, wherein the induced magnetic field directions of the antiferromagnetic layer and the pinned layer are the same, and the induced magnetic field and the antiferromagnetic layer and the pinning layer are induced by the free layer. The direction of the magnetic field is perpendicular, and finally the magnetization directions of the pinning layer and the free layer are both in the plane of the substrate, and the magnetization directions are perpendicular to each other;

4) The magnetic multilayer film of the magnetic field measuring unit is processed into a strip shape of 5 μιη><10 μm, the long side direction of the strip and the magnetization direction of the free layer of the magnetic measuring unit are processed by a conventional semiconductor processing process. Vertical

5), using the same sputtering conditions as in step 4) on the magnetron sputtering apparatus, depositing a 20 nm Au top electrode 4 layer 4 on the magnetic field measuring unit 3, and then using a conventional semiconductor processing process for the top electrode 4 layer, Etching into a "concave" shape as shown in FIG. 2, and the beam of the "concave" top electrode 4 layer 4 is longer than the bottom electrode, wherein the ends of the two long legs are elongated and then squared, or the direction can be changed. Made into a bend, the end area is large, convenient to connect with external circuits;

6), on the magnetron sputtering device using the same sputtering conditions as step 4), a layer of 100 nm SiO ₂ insulating layer 5 is deposited on the top electrode 4 layer 4 and elsewhere;

7), using the same sputtering conditions as in step 4) on the magnetron sputtering apparatus, depositing a 100 nm thick Nb superconducting layer on the insulating layer 5 obtained in the step 6), and then using the superconducting material layer for the superconducting material layer. The conventional semiconductor processing process is processed into a superconducting loop; the superconducting loop is a boss of a square ring having a certain width as shown in FIG. 4, wherein the outer side of the boss of the square ring has a length of 4 mni, and the inner side length is 2mm, there is a section of narrower width 6', the narrower portion 6' is longer than ΙΟΟμιηΧ 20 m wide _{; the} narrow portion 6' coincides with the position of the lower magnetic field measuring unit 3; The length ImmX of the rest of the part 6' is 0.1 mm, which is a one-dimensional magnetic field sensor;

8) Prepare the same two one-dimensional magnetic field sensors according to the steps 1 to 8). As shown in Fig. 6, fix the three one-dimensional sensors to three adjacent faces of a regular cube made of stainless steel. Upper, the fixing method can be glued, the planes of the three sensors are perpendicular to each other, and then the input terminals Ui of the three one-dimensional magnetic field sensors are connected in series, and the constant current I is input, from the output end of each one-dimensional magnetic field sensor. U. The output signal is measured to obtain the integrated three-dimensional superconducting composite magnetic field sensor of the present invention. The measurement accuracy of the magnetic field of the sensor provided by the present invention is calculated as follows (the schematic diagram is as shown in FIG. 7): The magnetic field Bsc generated by the "narrower portion" of the superconducting ring (the plane of the unit is measured by the magnetic field, and the direction is parallel to the X-axis, It is perpendicular to the current Jy) is the x-component,

(1)

Where Jsc is the current flowing through the superconducting ring, and the width of the "narrowed portion" is 2s.

The superconducting ring has a uniform external area of A and an inductance of L. The magnetic field to be measured Bext, get,

Bext■ A = L- Jsc (2)

It can be seen that by increasing the area A of the superconducting ring, the superconducting current Jsc is increased.

Combine the two formulas (1) and (2) to get

s+x s-x

B _sc ^x (x,y)=Bext^- arctg + arctg - (3)

Ns y y )

As shown in Fig. 7, the narrowed portion of the superconducting ring is at y=0, and the magnetic field measuring unit is at a position close to its lower (or upper) surface. The distance between the two is far less than the width of the narrow portion. 2s: y = h « 2s

It can be verified that Bsc does not change with X at this time. That is, the direction is parallel to the X-axis, and the intensity is constant. For simplicity, you can make x=0. Get:

Bsc Bext \arctg ≡Bsc (4)

2TIS h

The outer length of the superconducting ring is D, and the width of the superconducting ring is /, which is calculated.

A π-D

(5)

L-2μ _ϋ ln(D//)

gain:

₀ Beff Bsc

β = ~— «

Bext Bext substitutes (4) into the above formula to get Mo

Arc arctg\

271S

Where A/L is determined by equation (5). So, the magnification

Numerical estimation of the magnification (6) formula:

χ = 0, Η = 0Λμ, 100. : 1.3863

The amplification factor of the superconducting ring is

« 112.6

That is, the magnetic field at the magnetic field measuring unit is 112.6 times larger than the magnetic field to be measured. At present, the accuracy of the existing magnetic field measuring unit can be greater than 0.5mv/Oe, and only the output voltage greater than lmv can be detected well, that is, the minimum magnetic field that the magnetic field measuring unit can detect is about 20e, considering super The amplification of the guide ring, the minimum magnetic field that the entire sensor can detect will be less than 0.018 Oe. If the size parameter of the superconducting ring is re-optimized, the accuracy can be higher. Therefore, it is possible to meet the requirements of measuring a magnetic field (about 0.50 e) or even a smaller magnetic field. Example 2

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 1.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measurement unit is 10 μ πιχ20 μ πι. The superconducting ring is a ring as shown in Fig. 5. The 6 part has a width of lmm, and the 6' part has a width of ΙΟΟ μ πι and a length of 200 m. The regular hexahedral material is polytetrafluoroethylene.

Table 1. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 3

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 2.

The induced magnetic field applied during deposition was 1000 Oe. The magnetic field measuring unit is 100 nm x 200 nm. The superconducting ring is a ring as shown in Fig. 5, the 6 part has a width of 10 mm, the 6' part has a width of 10 um, and the length is 20 m. The regular hexahedral material is Table 2. Structure of magnetic multilayer film for integrated three-dimensional superconducting composite magnetic field sensor of the present invention

Example 4

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 3.

The induced magnetic field applied during deposition was 5000 Oe. The magnetic field measuring unit is 200 nm x 400 nm. The superconducting ring is a ring as shown in Fig. 5. The 6 part has a width of 100 mm, the 6' part has a width of 1 μm, and the length is 2 μm. The regular hexahedral material is Al.

Table 3. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 5

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 4. ,

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 400 nm x 800 nm. The superconducting ring is a square ring as shown in Fig. 4. The 6-part width is 10 mm, the 6' part width is ΙΟ μ ιη, and the length is 20 μ ηι. The regular hexahedral material is polytetrafluoroethylene. Table 4, Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 6

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 5. ■

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 1 μ πι><2 μ m. The superconducting ring is a square ring as shown in Fig. 4. The width of the 6-part is 100 mm, the width of the 6' portion is 1 μm, and the length is 2 μm. The regular hexahedral material is polytetrafluoroethylene. '

Table 5 shows the structure of the magnetic multilayer film for integrated three-dimensional superconducting composite magnetic field sensor of the present invention

Example 7

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 6.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 2μηη><4μπι. The superconducting ring is a ring as shown in FIG. 5, the 6 portion has a width of 1 mm, the 6' portion has a width of ΙΟΟμιη, and the length is 200 μm. The regular hexahedral material is polytetrafluoroethylene. Table 6. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 8

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 7.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 4μηηχ8μηι. The superconducting ring is a ring as shown in Fig. 5. The width of the 6 part is lmm, the width of the 6' part is ΙΟΟμπι, and the length is 200μπι. The regular hexahedral material is polytetrafluoroethylene.

Table 7. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 9

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 8.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measurement unit is 20 m><40 m. The superconducting ring is a ring as shown in Fig. 5. The width of the 6 part is 1 mm, the width of the 6' part is ΙΟΟμηι, and the length is 200 μm. The regular hexahedral forest material is polytetrafluoroethylene. Table 8. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 10

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 9.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 40 μm χ 80 μηι. The superconducting ring is a ring as shown in Fig. 5, the width of the 6 part is lmm, the width of the 6' part is ΙΟΟμπι, and the length is 200 μιη. The regular hexahedral material is polytetrafluoroethylene. '

Table 9. Structure of magnetic multilayer film for integrated three-dimensional superconducting composite magnetic field sensor of the present invention

Example 11

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 10.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 100 μπιχ200 μπι. The superconducting ring is a ring as shown in Fig. 5, the 6 portion has a width of 1 mm, the 6' portion has a width of 100 μm, and the length is 200 μm. The regular hexahedral material is polytetrafluoroethylene. Table 10, Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 12

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 11.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 200 μπιχ400 μηι. The superconducting ring is a ring as shown in Fig. 5. The 6 part has a width of 1 mm, the 6' part has a width of 100 μm, and the length is 200 wm. The regular hexahedral material is polytetrafluoroethylene.

Table 11. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 13

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 12.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 400wm<80 (^m. The superconducting ring is a ring as shown in Fig. 5, the width of the 6 part is lmm, the width of the 6' part is ΙΟΟμηι, and the length is 200μηι. The material of the regular hexahedron is polytetrafluoroethylene. Table 12, Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 14

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 13.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is lmmx2mm. The superconducting ring is a ring as shown in Fig. 5. The width of the 6 part is lmm, the width of the 6' part is 100.μ ηι, and the length is 200 μ η. The regular hexahedral material is polytetrafluoroethylene.

Table 13. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 15

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 14.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 2mm x 4mm. The superconducting ring is a ring as shown in Fig. 5, the 6 part has a width of 1 mm, the 6' part has a width of ΙΟΟ μ ηι, and the length is 200 nm. The regular hexahedral material is polytetrafluoroethylene. Table 14. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 16

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 15.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 4mm x 8mm. The superconducting ring is a ring as shown in Fig. 5, the width of the 6 part is lmm, the width of the 6' part is ΙΟΟμηι, and the length is 200 μιη. The regular hexahedral material is polytetrafluoroethylene.

Table 15. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 17

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 16.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 10μηιχ20μπι. The superconducting ring is a ring as shown in Fig. 5, the 6-part width is an In dish, and the 6' portion has a width of ΙΟΟμηι and a length of 200 μm. The regular hexahedral material is polytetrafluoroethylene. Table 16. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 18

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 17.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 10μπιχ20μηι. The superconducting ring is a ring as shown in Fig. 5, the width of the 6 part is lmrn, the width of the 6' part is ΙΟΟμηι, and the length is 200μηι. The regular hexahedral material is polytetrafluoroethylene.

Table 17. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 19

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 18.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measuring unit is 10 μπι 20 μιη. The superconducting ring is a ring as shown in Fig. 5, the 6 part has a width of 1 mm, the 6' part has a width of ΙΟΟμηι, and the length is 200 μm. The regular hexahedral material is polytetrafluoroethylene. Table 18. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

Example 20

The integrated three-dimensional superconducting composite magnetic field sensor of the present invention was prepared in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 19.

The induced magnetic field applied during deposition was 50 Oe. The magnetic field measurement unit is 10 μ πι><20 μ πι. The superconducting ring is a ring as shown in Fig. 5. The width of the 6 part is lmm, the width of the 6' part is ΙΟΟ μ ηι, and the length is 200 μ η. The regular hexahedral material is polytetrafluoroethylene.

Table 19. Structure of Magnetic Multilayer Film for Integrated Three-Dimensional Superconducting Composite Magnetic Field Sensor of the Present Invention

The above integrated three-dimensional magnetic field sensor provided by the present invention can be used to detect a three-dimensional magnetic field. In operation, the Ui terminals of the three sensors a, b, c are connected in series, connected to a constant voltage source or a constant current source, when the currents on the three sensors are the same, given at the Uo end of &, b, c The output signals correspond to the three directions of x, y, and z, respectively. When there is an external magnetic field, a current will be generated in the superconducting loop, and the current in the loop generates a magnetic field around the superconducting. In the portion where the loop width is small, due to the large current density, a magnetic field is generated several orders of magnitude higher than the external magnetic field, and the magnetic field measuring unit measures the induced magnetic field. When the external magnetic field changes, the induced magnetic field changes accordingly, causing changes in the magnetoresistance of the three sensors a, b, and c, resulting in changes in the output signal. When the free layer is perpendicular to the direction of the pinning layer, the output voltage is linear with the change of the external magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the output voltage.

Claims

Rights request

A three-dimensional integrated composite magnetic field sensor comprising a substrate, a buffer layer (2) deposited on the substrate (1), and a bottom electrode (8) above the buffer layer (2), and a bottom electrode (8) Magnetic field measurement unit

The magnetic multilayer film unit of (3), and the top electrode (8) thereon constitute a one-dimensional magnetic field sensor; characterized in that it further comprises a hexahedral non-magnetic material block (9) and deposited on the top electrode layer Insulating layer (5), superconducting material layer: There are three one-dimensional magnetic field sensors, and three identical one-dimensional magnetic field sensors are respectively fixed on three adjacent surfaces of the non-magnetic material block (9). The planes of two adjacent one-dimensional magnetic field sensors are perpendicular to each other; the magnetic multilayer film unit is an antiferromagnetic layer (31), a pinning layer (32), a non-magnetic layer (33), and a free layer ( 34), wherein the magnetization directions of the pinned layer and the free layer are perpendicular to each other; the top electrode (8) is provided with a free layer (34), and the free layer (34) is sequentially deposited with an insulating layer (5) and super a layer of conductive material; the layer of superconducting material is etched into a ring or a rectangle having a width of 5 mm to 1000 mm, wherein a portion having a narrow width (6') is 1 to 100. μ ιη, the length of the segment is 10~200 m; the rest is width part

(6) is l~100mm _; wherein the position of the narrow portion (6') coincides with the position of the magnetic field measuring unit below, and the length direction is perpendicular to the magnetization direction of the pinning layer of the magnetic field measuring unit; The input end Ui of the dimensional magnetic field sensor is connected in series to obtain the integrated three-dimensional superconducting composite magnetic field sensor of the present invention.

2. The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein said bottom electrode 8 (8) and said top electrode (8) are both "concave" or elongated; or The end portions of the two legs are made larger than the middle; the bottom electrode (8) and the top electrode (4) are Au, Cu or Ta metal and have a thickness of 10 to 500 nm.

The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein the hexahedral non-magnetic material block (9) is Cu, Al or stainless steel, or an organic material, and the organic material is polytetrafluoroethylene.

4. The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein said free layer (34) is Co, Fe, Co-Fe, Co-Fe-B, Co-Fe-Si-B. Or an M-Fe alloy having a thickness of 1.0 to 10 nm.

The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein the insulating layer (5) is A1 ₂ 0 ₃ or Si0 ₂ and has a thickness of 10 to 500 nm.

6. The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein the superconducting material layer is Nb, Sn, Pb, In, Ta, Nb-Ti, Mo-Re, V ₃ Si, NbN. Nb ₃ Sn, Nb ₃ Ge, Pb-In-Au, Pb-Au, MgB ₂ and oxide YBaCuO have a thickness of 10 to 500 nm.

7. The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein said antiferromagnetic layer (31) is an alloy having antiferromagnetic properties, and said alloy comprises Ir-Mn, Fe-Mn, Pt- Mn, or Cr-Mn alloy;; the thickness of the antiferromagnetic layer is 2~20 nm _;

8. The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein said pinning layer (32) The ferromagnetic metal having a spin polarizability is a Co-Fe alloy, a Ni-Fe alloy, and an amorphous CoFeB alloy; the pinned layer has a thickness of 2 to 20 nm.

The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein the non-magnetic layer (33) is made of A1 ₂ 0 ₃ , MgO, AlN, Ta ₂ _{5 5} , ZnO or Ti _{2 2} insulating materials; The thickness thereof is 0.5 to 5 nm; or a metal material of Cu, Cr, V, Nb, Mo, Ru, Ta, W, Re, R, Ir is used, and the thickness thereof is 0.4 to 10 nm.

10. The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein the substrate (1) is a Si substrate or a Si-SiO ₂ substrate having a thickness of 0.3 to 1 mm.

The three-dimensional integrated composite magnetic field sensor according to claim 1, wherein the buffer layer (2) is Ta, Ru, Cr, Pt; and has a thickness of 3 to 10 nm.

12. A method of fabricating the three-dimensional integrated composite magnetic field sensor of claim 1 comprising the steps of:

1) Selecting the substrate: Selecting the Si or Si-SiO ₂ wafer as the substrate (1), after being cleaned and dried by a conventional semiconductor ultrasonic cleaning process, placed in a magnetron sputtering apparatus to deposit a buffer layer on the substrate (2) The sample after depositing the buffer layer is used; the buffer layer (2) is Ta, Ru, Cr, Pt, and the deposition thickness is 3 to 10 nm;

2) Making the bottom electrode 8: On the sample prepared in the step 1), depositing Au or Cu metal as a bottom electrode layer by a magnetron sputtering device, and then using a conventional semiconductor photolithography process, after being glued, pre-baked and exposed After development, fixing and drying, the bottom electrode (8) is etched into a "concave" shape or a long strip shape by ion etching; or the end portions of the two legs of the electrode are made larger than the middle;

3) preparing a magnetic field measuring unit on the sample prepared in the step 2): depositing a magnetic multilayer measuring unit of the magnetic field measuring unit on the bottom electrode (8) by using a magnetron sputtering device, the magnetic multilayer film unit including Antiferromagnetic layer (31), pinning layer (32), non-magnetic layer (33) and free layer (34); when depositing antiferromagnetic layer (31), pinning layer (32), free layer (34) ), an inductive magnetic field of 50 to 5000 Oe is applied; wherein the direction of the induced magnetic field applied to the antiferromagnetic layer (31) and the pinned layer (32) is the same, and the direction of the induced magnetic field applied to the free layer (34) is applied to the opposite Ferromagnetic layer

(31), the direction of the induced magnetic field of the pinning layer (32) is perpendicular, and the magnetization directions of the pinning layer (32) and the free layer (34) are both in the plane of the substrate, and the magnetization directions are perpendicular to each other;

4 m. The area of the long side of the strip is perpendicular to the direction of the magnetization of the free layer, and the area is 0.01 mm. ² ~ 100mm ² , finally immersed in acetone to remove the photoresist;

5) Making the top electrode 4: Using a magnetron sputtering device, depositing a layer of Au or Cu metal film on the magnetic field measuring unit as the top electrode layer; then using a conventional semiconductor micromachining process to process the top electrode (8) "concave" or elongated; or the end of the two legs of the electrode is made larger than the middle;

6) Depositing the insulating layer: Using a magnetron sputtering device, at the bottom electrode (8), the magnetic field measuring unit (3) and the top Depositing an A1 ₂ 0 ₃ or SiO ₂ insulating layer (5) around the pole (8), having a thickness of 10 to 500 nm;

7) Making a superconducting layer: depositing a layer of superconducting material on the insulating layer (5) by means of a magnetron sputtering device; then processing the superconducting material layer into a ring or rectangle with a width using a conventional semiconductor processing process a boss, the circular or rectangular boss of the superconducting material has a length of 5 mm - 1000 mm, wherein a narrow portion (6') is 1 to 100 m, and the narrow portion (6') has a length of 10 200 μ ιη _; the width of the wide portion (6) has a width of 1 to 100 mm; wherein the position of the narrow portion (6') coincides with the position of the magnetic field measuring unit (3) below, and the length direction and the magnetic field measuring unit The magnetization direction of the pinning layer (32) is perpendicular to the one-dimensional magnetic field sensor; three identical one-dimensional magnetic field sensors are produced;

8) The three one-dimensional magnetic field sensors prepared in step 7) are respectively fixed on three adjacent faces of the hexahedral non-magnetic metal material block (9), and the planes of the three magnetic field sensors are perpendicular to each other, and then The input terminals Ui of the three magnetic field sensors are connected in series to obtain the integrated three-dimensional composite magnetic field sensor of the present invention.

13. The method of preparing a three-dimensional integrated composite magnetic field sensor according to claim 12, wherein the hexahedral non-magnetic material block (9) is Cu, Al, stainless steel, or an organic material, and the organic material is a poly Tetrafluoroethylene.

14. The method of claim 3, wherein the free layer (34) is made of Co, Ni, Fe, Co-Fe alloy, Co ₄₀ Fe ₄₀ B2. ₀ , Co ₆₀ Fe ₂₀ B ₂₀ , Co-Fe-Si-B alloy or Ni-Fe alloy, the thickness of which is 1.0 to 10 nm.

15. The method of claim 3, wherein the superconducting material layer is Nb, Sn, Pb, In, Ta, b-Ti, Mo-Re V ₃ Si NbN, Nb ₃ Sn, Nb ₃ Ge', Pb-In-Au, Pb-Au, MgB ₂ and oxide YBaCuO have a thickness of 10 to 500 nm.

16. The method according to claim 12, wherein the antiferromagnetic layer (31) in step 3) is Ir-Mn, Fe-Mn, Pt-Mn or Cr-Mn. , thickness is 2~20 nm.

17. The method of preparing a three-dimensional integrated composite magnetic field sensor according to claim 12, wherein the pinning layer (32) in step 3) is a Co-Fe alloy, a Ni-Fe alloy, an amorphous CoFeB alloy, and a thickness. It is 2~20 nm.

18. The method according to claim 12, wherein the non-magnetic layer (33) in step 3) is A1 ₂ 0 ₃ , MgO, A1N, Ta ₂ _{5 5} , ZnO, Or Ti0 ₂ insulating material, the thickness is 0.5~5nm; or Cu, Cr, V, Nb, Mo, Ru, Ta, W, Re, R, Ir metal material, the thickness is 0.4~10 nm.

The method for preparing a three-dimensional integrated composite magnetic field sensor according to claim 12, wherein the bottom electrode (8) and the top electrode (8) are Au, Cu or Ta metal films, and the thickness thereof is 10~ 500nm.