CN104007401B - Planarized three-dimensional magnetic sensing chip - Google Patents
Planarized three-dimensional magnetic sensing chip Download PDFInfo
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- CN104007401B CN104007401B CN201310055189.XA CN201310055189A CN104007401B CN 104007401 B CN104007401 B CN 104007401B CN 201310055189 A CN201310055189 A CN 201310055189A CN 104007401 B CN104007401 B CN 104007401B
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Abstract
The invention discloses a planarized three-dimensional magnetic sensing chip. The planarized three-dimensional magnetic sensing chip includes a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a magnetic bundle deflection concentration structure which are all disposed on a circuit chip substrate. The first magnetic sensor and the second magnetic sensor together measure a first-direction component and a third-direction component of a magnetic flux. The third magnetic sensor measures a second-direction component of the magnetic flux. The magnetic bundle deflection concentration structure deflects the third-direction component of the magnetic flux to the first direction, so that the first magnetic sensor and the second magnetic sensor measure, in the first direction, the third-direction component of the magnetic flux. The magnetic bundle deflection concentration structure and other magnetic sensors are completed through semiconductor process, a third-direction magnetic sensor does not need to be assembled in a two-segment manner, and therefore the productivity and the yield are substantially improved.
Description
Technical field
The present invention relates to a kind of Three-Dimensional Magnetic sensor chip, especially with flux deviation concentrating structure, and can be same flat
Face measures the three-dimensional component of magnetic flux.
Background technology
Magnetic Sensor is widely used in various industries, is mainly used in sensing magnetic field, such as：Magnetic field of the earth senses
The various applications of device, linear transducer, angular transducer and switch sensor etc., use sensing magnetic field and position including direction to do
Or navigated or carried out measuring etc. multiformity change.With the development of science and technology, such as auto-navigation system, intelligent handss
Machine, is used as navigation, therefore, the demand of magnetic inductor is consequently increased, and by the characteristic of magnetic induction, promptly can apply
In navigation and global positioning system.Modern electronic product design is single towards the device of several difference in functionalitys is incorporated into one
In electronic product, when the compact design with electronic product, while reducing integral product volume, the design of magnetic inductor
Also tested.
Traditional magnetic inductor is to arrange three mutually isostructural magnetic inductors, both is arranged at conplane vertical
Direction, to the X-axis component and Y-axis component that measure magnetic field, and to measure another Magnetic Sensor of magnetic field z-component, needs
Both to be vertically arranged with other, as the size design of current integrated circuit is less and less, due to vertical connection, processing procedure needs
Two-part is carried out, and process connected vertically, and standardization is difficult on processing procedure, and yield is difficult to improve, and easily produces failure, and makes
Obtain overall cost to improve.
Accordingly, it would be desirable to one kind can reduce overall volume, the magnetic inductor in three directions is arranged at same plane to reduce
The sensor construction of the problem on processing procedure.
The content of the invention
The main object of the present invention is to provide a kind of Three-Dimensional Magnetic sensor chip of planarization, comprising circuit chip substrate,
One Magnetic Sensor, the second Magnetic Sensor, the 3rd Magnetic Sensor and flux deviation concentrating structure, the first Magnetic Sensor, the second magnetic
Sensor, the 3rd Magnetic Sensor and flux deviation concentrating structure are arranged at the upper surface of circuit chip substrate, and and circuit core
Circuit electrical connection in plate base.First Magnetic Sensor and the second Magnetic Sensor measure jointly a magnetic flux in a first direction with
And the component of third direction.3rd Magnetic Sensor to measure component of the magnetic flux in second direction, second direction with this first
Direction is mutually perpendicular in a plane, the vertical first direction of the third direction and the second direction.
Flux deviation concentrating structure, is arranged between first Magnetic Sensor and second Magnetic Sensor, by the magnetic flux
Concentrate in the component of the third direction, and deviation is to the first direction, so as to pass by first Magnetic Sensor and second magnetic
Sensor measures component of the magnetic flux in the third direction in the first direction.
Further, with one group of the 4th Magnetic Sensor and the 5th Magnetic Sensor replacing the 3rd Magnetic Sensor, flux deviation
Concentrating structure is arranged between first Magnetic Sensor and second Magnetic Sensor, and the 4th Magnetic Sensor is passed with the 5th magnetic
Between sensor, component of the magnetic flux in a third direction is concentrated, and deviation is to the first direction or the second direction, and mat
Component of the magnetic flux in the third direction is measured in the first direction by first Magnetic Sensor and second Magnetic Sensor,
Or the magnetic flux is measured in the second direction in the third direction by the 4th Magnetic Sensor and the 5th Magnetic Sensor
Component.
Can be passed with the first Magnetic Sensor of first direction and second direction, the second magnetic is measured using flux deviation concentrating structure
Sensor, the 3rd Magnetic Sensor (or the 4th Magnetic Sensor and the 5th Magnetic Sensor), is completed in the way of manufacture of semiconductor, or
Row cutting again of purchasing in advance is positioned over configured position, or with physical property or chemical deposition and is etched and formed, and also may be used
Carried out with damascene structures；Using the mode of deviation magnetic flux, the magnetic flux of three-dimensional is measured in the plane, without with tradition
Mode installs the Magnetic Sensor of third direction with the processing procedure of two-part, and the yield and yield of Magnetic Sensor greatly improved.
Description of the drawings
Figure 1A is the schematic diagram of the Three-Dimensional Magnetic sensor chip first embodiment of present invention planarization；
Figure 1B is the schematic diagram of the Three-Dimensional Magnetic sensor chip second embodiment of present invention planarization；
Fig. 1 C are the schematic diagram of the Three-Dimensional Magnetic sensor chip 3rd embodiment of present invention planarization；
Schematic diagrams of the Fig. 2A for the magnetic line of force distribution of flux deviation concentrating structure；And
Vector simple schematic diagrams of Fig. 2 B for the magnetic of flux deviation concentrating structure.
Wherein, description of reference numerals is as follows：
The Three-Dimensional Magnetic sensor chip of 1 planarization
The Three-Dimensional Magnetic sensor chip of 2 planarizations
The Three-Dimensional Magnetic sensor chip of 3 planarizations
10 circuit chip substrates
21 first Magnetic Sensors
23 second Magnetic Sensors
30 the 3rd Magnetic Sensors
31 the 4th Magnetic Sensors
33 the 5th Magnetic Sensors
40 flux deviation concentrating structures
Specific embodiment
Schema and element numbers are below coordinated to do more detailed description to embodiments of the present invention, to make art technology
Personnel can implement according to this with reference to specification word.
Refering to Figure 1A, Figure 1A is the schematic diagram of the Three-Dimensional Magnetic sensor chip first embodiment of present invention planarization.Such as Figure 1A
Shown, the Three-Dimensional Magnetic sensor chip 1 of the planarization of first embodiment includes a circuit chip substrate 10, one first Magnetic Sensor
21st, one second Magnetic Sensor 23, one the 3rd Magnetic Sensor 30 and a flux deviation concentrating structure 40.First Magnetic Sensor
21st, second Magnetic Sensor 23, the 3rd Magnetic Sensor 30 and the flux deviation concentrating structure 40 are all disposed within circuit chip
The upper surface of substrate 10, and with circuit chip substrate 10 in circuit it is (not visible) electrical connection, first Magnetic Sensor 21
And second Magnetic Sensor 23, to measure the component of magnetic flux first direction A, the 3rd Magnetic Sensor 30 is to measure magnetic flux
The component of amount second direction B, wherein second direction B are mutually perpendicular in a plane with first direction A.Flux deviation concentrating structure
40 are arranged between the first Magnetic Sensor 21 and one second Magnetic Sensor 23, the first Magnetic Sensor 21 and one second Magnetic Sensor 23
It is symmetrical based on flux deviation concentrating structure 40, the component of magnetic flux third direction C is converted to into deviation to first direction A, and energy
First Magnetic Sensor 21 and second Magnetic Sensor 23 is enough utilized to measure the component of third direction C, wherein third direction C and the
One direction A and second direction B are all vertical.
Refering to Figure 1B, Figure 1B is the schematic diagram of the Three-Dimensional Magnetic sensor chip second embodiment of present invention planarization.Such as Figure 1B
It is shown, the three-dimensional magnetic strength of the Three-Dimensional Magnetic sensor chip 2 of the planarization of second embodiment substantially with the planarization of first embodiment
Survey chip 1 similar, simply by the first Magnetic Sensor 21, one second Magnetic Sensor 23 changes direction, magnetic flux is measured the
The component of two direction B, and the 3rd Magnetic Sensor 30 is to measure the component of magnetic flux first direction A.Flux deviation concentrates knot
Structure 40 is arranged between the first Magnetic Sensor 21 and one second Magnetic Sensor 23, and the component of magnetic flux third direction C is converted to
Deviation is to second direction B, and first Magnetic Sensor 21 and second Magnetic Sensor 23 can be utilized to measure dividing for third direction C
Amount.
Refering to Fig. 1 C, Fig. 1 C are the schematic diagram of the Three-Dimensional Magnetic sensor chip 3rd embodiment of present invention planarization.Such as Fig. 1 C
Shown, the Three-Dimensional Magnetic sensor chip 3 of the planarization of 3rd embodiment is sensed by the Three-Dimensional Magnetic of the planarization of first embodiment
Chip 1 is improved, and the 3rd Magnetic Sensor 30 is changed into the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33 simply.First magnetic
Sensor 21, second Magnetic Sensor 23, the 4th Magnetic Sensor 31, the 5th Magnetic Sensor 33 and the flux deviation concentrating structure
40 upper surfaces for being all disposed within circuit chip substrate 10, and electrically connect with the circuit (not visible) in circuit chip substrate 10
Connect.First Magnetic Sensor 21 and second Magnetic Sensor 23 are to measure the component of magnetic flux first direction A, the 4th magnetic sensing
Device 31 and the 5th Magnetic Sensor 33 are to measure the component of magnetic flux second direction B.Flux deviation concentrating structure 40 is arranged at
Between first Magnetic Sensor 21 and one second Magnetic Sensor 23 and between the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33, will
The component of magnetic flux third direction C is converted to deviation to first direction A or second direction B, and can be sensed using first magnetic
Device 21 and second Magnetic Sensor 23, or the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33 measure dividing for third direction C
Amount.
Refering to Fig. 2A figures and Fig. 2 B, the respectively schematic diagram of the magnetic line of force distribution of flux deviation concentrating structure and vector letter
Easy schematic diagram.As shown in Figure 2 A, the magnetic line of force that top is input into by flux deviation concentrating structure 40 is inner integrated at which, and in flux
Two side of the lower direction output of deviation concentrating structure 40.As shown in Figure 2 B, with aforementioned first embodiment as an example.When inclined in flux
The magnetic flux of third direction C is input into above folding concentrating structure 40, and in the magnetic flux deviation by third direction C to first direction A,
And export towards both sides so that first Magnetic Sensor 21, second Magnetic Sensor 23 measure magnetic flux A1, A2 respectively, due to
The direction of magnetic flux A1, A2 is different, and with right side as forward direction, the magnetic flux of third direction C is essentially A1-A2.And in first party
To the input of A, when the first Magnetic Sensor 21, second Magnetic Sensor 23 are collectively aligned, when the first Magnetic Sensor 21, second magnetic
Sensor 23 measures magnetic flux A1, A2 respectively, then the magnetic flux of first direction is substantially A1+A2, the magnetic flux of third direction
For A1-A2；When the first Magnetic Sensor 21,23 reversed arrangement of the second Magnetic Sensor, then the magnetic flux of first direction is substantially A1-
A2, and the magnetic flux of third direction is A1+A2.Thus, substantially can substantially separate, and the first Magnetic Sensor can be utilized
21st, second Magnetic Sensor 23 measures magnetic flux in a first direction and component of third party's amount, the above only as an example, and not
To limit, actually various axial computings can be applied.
It is to be appreciated that when with the first Magnetic Sensor 21, the second Magnetic Sensor 23 and the 4th Magnetic Sensor 31 and the 5th
During Magnetic Sensor 33, when the first Magnetic Sensor 21, second Magnetic Sensor 23 are collectively aligned, the measured flux component for arriving
Be added, can be magnetic flux in a first direction or second direction component, and flux component is subtracted each other, and is magnetic flux in third party
To component；Conversely, when the first Magnetic Sensor 21,23 reversed arrangement of the second Magnetic Sensor, the measured magnetic flux for arriving point
Amount is subtracted each other, can be magnetic flux in a first direction or second direction component, and flux component is added, and is magnetic flux the 3rd
The component in direction.When 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33 are collectively aligned, the flux component for measuring is added, can
Magnetic flux is thought in second direction or the component of first direction, during reversed arrangement, the flux component for measuring is subtracted each other, Ke Yiwei
Magnetic flux is in second direction or the component of first direction.
In the same manner understandably, when with the first Magnetic Sensor 21, the second Magnetic Sensor 23 and the 4th Magnetic Sensor 31 and
During five Magnetic Sensors 33, when the first Magnetic Sensor 21, second Magnetic Sensor 23 are collectively aligned, the measured magnetic flux for arriving point
Amount be added, can be magnetic flux in a first direction or second direction component, the first Magnetic Sensor 21, second Magnetic Sensor 23
During reversed arrangement, it is measured to flux component subtract each other, can be magnetic flux in a first direction or second direction component, the
When four Magnetic Sensors 31 and the 5th Magnetic Sensor 33 are collectively aligned, the flux component for measuring is added, and can exist for magnetic flux
The component of second direction or first direction, and flux component is subtracted each other, and is component of the magnetic flux in third direction；Conversely, reversely
During arrangement, the flux component for measuring is subtracted each other, and can be magnetic flux in second direction or the component of first direction, and magnetic flux
Component is added, and is component of the magnetic flux in third direction.
First Magnetic Sensor 21, second Magnetic Sensor 23, the 3rd Magnetic Sensor 30 (or the 4th Magnetic Sensor 31 and
33) 5th Magnetic Sensor, can be anisotropy magnetic resistance (anisotropic magnetic resistance, AMR) component, huge
Magnetic resistance (giant magnetic resistance, GMR) component and tunnel magneto-resistance (tunneling magnetic
Reluctance, TMR) component at least one, each Magnetic Sensor can form respective independent bridge structure electricity each other again
Gas connects, or packet series connection connects, and for example, first Magnetic Sensor 21 and second Magnetic Sensor 23 are connected to each other to form electricity
Bridge construction, then with the 3rd Magnetic Sensor 30/ or the 4th Magnetic Sensor 31 being connected with each other for being individually formed bridge structure and
5th Magnetic Sensor 33 is electrically connected to each other.
First Magnetic Sensor 21, second Magnetic Sensor 23 and the 3rd Magnetic Sensor 30 (or the 4th Magnetic Sensor
31 and the 5th Magnetic Sensor 33), can be independently to manufacture on row group device circuit chip substrate 10 again, or directly in the electricity
Formed with etching method with physical property or chemical sedimentation on road chip substrate 10.
The bottom surface of the flux deviation concentrating structure 40 is passed with the first Magnetic Sensor 21, second Magnetic Sensor 23, the 3rd magnetic
30 (or the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33) copline of sensor or slightly above or below magnetic sensing component it is flat
Face.The flux deviation concentrating structure 40 is column, and which can be the solid cylinder with any the ratio of width to height, corner post or polygon
Post, and its permeability (permeability) is 1～10000H/m, is metallicity magnetic material or ceramic magnet material, contains
Metallicity magnetic material is that ferrum, cobalt, nickel, ferrocobalt, cobalt-nickel alloy, iron-nickel alloy, iron cobalt nickel alloy and ferro-cobalt boronation are closed
At least one of thing.Ceramic magnet material is Ferrite (ferrimagnets), and its crystal structure is spinelle
(spinel), at least one of inverse spinel (anti-spinel) and calcium nutrition (perovskite).
The flux deviation concentrating structure 40, can purchase in advance, cut and be positioned over what the circuit chip substrate 10 was configured again
Position, or deposited with physical property or chemical to etch, directly formed on the circuit chip substrate 10, for example, in the electricity
Etch column hole on road chip substrate 10 in advance, then with physical property or chemical deposition by it fill up after leveling and formed.
It is a feature of the present invention that flux deviation concentrating structure can be passed with the first magnetic for measuring first direction and second direction
Sensor, the second Magnetic Sensor, the 3rd Magnetic Sensor (or the 4th Magnetic Sensor and the 5th Magnetic Sensor), with the side of manufacture of semiconductor
Formula is completed, and using the mode of deviation magnetic flux, measures the magnetic flux of three-dimensional in the plane, without with traditional approach with two sections
The processing procedure of formula installs the Magnetic Sensor of third direction, and the yield and yield of Magnetic Sensor greatly improved.
As described above is only, to explain presently preferred embodiments of the present invention, to be not intended to be the present invention any shape according to this
Restriction in formula, therefore, it is all to have made any modification for the present invention or change under identical spirit, should all wrap
Include the invention is intended to the category of protection.
Claims (25)
1. the Three-Dimensional Magnetic sensor chip of a kind of planarization, it is characterised in that include：
One circuit chip substrate；
One first Magnetic Sensor, is arranged at the upper surface of the circuit chip substrate；
One second Magnetic Sensor, is arranged at the upper surface of the circuit chip substrate, measures jointly a magnetic with first Magnetic Sensor
Flux is in a first direction and the component of a third direction；
One the 3rd Magnetic Sensor, is arranged at the upper surface of the circuit chip substrate, to measure the magnetic flux in a second direction
Component, the wherein second direction is mutually perpendicular in a plane with the first direction, and the vertical first party of the third direction
To with the second direction；And
One flux deviation concentrating structure, is arranged at the upper surface of the circuit chip substrate, is arranged at first Magnetic Sensor and is somebody's turn to do
Between second Magnetic Sensor, component of the magnetic flux in the third direction is concentrated, and deviation is to the first direction, and by this
First Magnetic Sensor and second Magnetic Sensor measure component of the magnetic flux in the third direction in the first direction,
Wherein first Magnetic Sensor, second Magnetic Sensor, the 3rd Magnetic Sensor and the flux deviation concentrating structure with
Circuit electrical connection in the circuit chip substrate, and first Magnetic Sensor and second Magnetic Sensor are inclined based on the flux
Folding concentrating structure is symmetrical.
2. the Three-Dimensional Magnetic sensor chip of planarization as claimed in claim 1, it is characterised in that the flux deviation concentrating structure is
Column, and be one of solid cylinder, polygon post.
3. the Three-Dimensional Magnetic sensor chip of planarization as claimed in claim 1, it is characterised in that the flux deviation concentrating structure is
One magnetic material containing metallicity or a ceramic magnet material, and the permeability of the flux deviation concentrating structure is 1～10000H/
m。
4. the Three-Dimensional Magnetic sensor chip of planarization as claimed in claim 3, it is characterised in that this contains metallicity magnetic material and is
At least one of ferrum, cobalt, nickel, ferrocobalt, cobalt-nickel alloy, iron-nickel alloy, iron cobalt nickel alloy and ferro-cobalt boron compound.
5. the Three-Dimensional Magnetic sensor chip for planarizing as claimed in claim 3, it is characterised in that the ceramic magnet material is ferrum oxygen
Magnet, and the crystal structure of the ceramic magnet material is at least one of spinelle, inverse spinel and calcium nutrition.
6. the Three-Dimensional Magnetic sensor chip of planarization as claimed in claim 1, it is characterised in that first Magnetic Sensor and this
Two Magnetic Sensors, if which is into being collectively aligned, the resulting flux component adds up to the magnetic flux in the first direction
Component, the flux component obtained by which subtract each other, then for the magnetic flux the third direction component；If which is into reversely row
Row, then the flux component is mutually kept to component of the magnetic flux in the first direction, and obtained by which, the flux component is added, then
For the magnetic flux the third direction component；And the 3rd Magnetic Sensor then independently measures the magnetic flux in the second direction
Component.
7. the Three-Dimensional Magnetic sensor chip of planarization as claimed in claim 1, it is characterised in that first Magnetic Sensor, this
Two Magnetic Sensors and the 3rd Magnetic Sensor, be anisotropy magnetoresistive component, giant magnetoresistance component and tunnel magneto-resistance component extremely
One of few, first Magnetic Sensor, second Magnetic Sensor, the 3rd Magnetic Sensor form independent bridge structure again each other
Electrical connection, or after first Magnetic Sensor, second Magnetic Sensor connect and to form bridge structure, then with independent bridge structure
3rd Magnetic Sensor connects.
8. the Three-Dimensional Magnetic sensor chip of planarization as claimed in claim 1, it is characterised in that first Magnetic Sensor, this
After two Magnetic Sensors and the 3rd Magnetic Sensor are independently to manufacture, then it is assembled on the circuit chip substrate.
9. the Three-Dimensional Magnetic sensor chip of planarization as claimed in claim 1, it is characterised in that first Magnetic Sensor, this
Two Magnetic Sensors and the 3rd Magnetic Sensor are directly with physical property or chemical sedimentation and erosion on the circuit chip substrate
Lithography is formed.
10. the Three-Dimensional Magnetic sensor chip for planarizing as claimed in claim 1, it is characterised in that the flux deviation concentrating structure
Bottom surface and first Magnetic Sensor, second Magnetic Sensor, the 3rd Magnetic Sensor copline or slightly above or below should
First Magnetic Sensor, second Magnetic Sensor, the plane of the 3rd Magnetic Sensor.
The Three-Dimensional Magnetic sensor chip of 11. planarizations as claimed in claim 1, it is characterised in that the flux deviation concentrating structure
Row cutting again of purchasing in advance is positioned over configured position.
The Three-Dimensional Magnetic sensor chip of 12. planarizations as claimed in claim 1, it is characterised in that the flux deviation concentrating structure
Deposit and be etched in physical property or chemical and formed on the circuit chip substrate.
The Three-Dimensional Magnetic sensor chip of 13. a kind of planarizations, it is characterised in that include：
One circuit chip substrate；
One first Magnetic Sensor, is arranged at the upper surface of the circuit chip substrate；
One second Magnetic Sensor, is arranged at the upper surface of the circuit chip substrate, measures jointly a magnetic with first Magnetic Sensor
Flux is in a first direction component；
One the 4th Magnetic Sensor, is arranged at the upper surface of the circuit chip substrate；
One the 5th Magnetic Sensor, is arranged at the upper surface of the circuit chip substrate, measures jointly a magnetic with the 4th Magnetic Sensor
Flux is mutually perpendicular to the first direction in a plane in a second direction component, the second direction；And
One flux deviation concentrating structure, is arranged at the upper surface of the circuit chip substrate, is arranged at first Magnetic Sensor and is somebody's turn to do
Between second Magnetic Sensor, and between the 4th Magnetic Sensor and the 5th Magnetic Sensor, by the magnetic flux in a third direction
Component concentrate, and deviation is to the first direction or the second direction, and senses by first Magnetic Sensor and second magnetic
Device measures component of the magnetic flux in the third direction in the first direction, or by the 4th Magnetic Sensor and the 5th
Magnetic Sensor measures component of the magnetic flux in the third direction in the second direction,
The wherein vertical first direction of the third direction and the second direction, wherein first Magnetic Sensor, second magnetic are sensed
In device, the 4th Magnetic Sensor, the 5th Magnetic Sensor and the flux deviation concentrating structure and the circuit chip substrate one
Circuit electrical connection, first Magnetic Sensor and second Magnetic Sensor, and the 4th Magnetic Sensor and the 5th Magnetic Sensor
It is symmetrical based on the flux deviation concentrating structure.
The Three-Dimensional Magnetic sensor chip of 14. planarizations as claimed in claim 13, it is characterised in that the flux deviation concentrating structure
For column, and for one of solid cylinder, polygon post.
The Three-Dimensional Magnetic sensor chip of 15. planarizations as claimed in claim 13, it is characterised in that the flux deviation concentrating structure
For a magnetic material containing metallicity or a ceramic magnet material, and the permeability of the flux deviation concentrating structure be 1～
10000H/m。
The Three-Dimensional Magnetic sensor chip of 16. planarizations as claimed in claim 15, it is characterised in that this contains metallicity magnetic material
For ferrum, cobalt, nickel, ferrocobalt, cobalt-nickel alloy, iron-nickel alloy, iron cobalt nickel alloy and ferro-cobalt boron compound at least within it
One.
The Three-Dimensional Magnetic sensor chip of 17. planarizations as claimed in claim 15, it is characterised in that the ceramic magnet material is ferrum
Oxygen magnet, and the crystal structure of the ceramic magnet material is at least one of spinelle, inverse spinel and calcium nutrition.
The Three-Dimensional Magnetic sensor chips of 18. planarizations as claimed in claim 13, it is characterised in that first Magnetic Sensor, should
Second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor, be anisotropy magnetoresistive component, giant magnetoresistance component and
At least one of tunnel magneto-resistance component, first Magnetic Sensor, second Magnetic Sensor, the 4th Magnetic Sensor and should
It is electrically connected to each other again that 5th Magnetic Sensor forms independent bridge structure, or first Magnetic Sensor, second Magnetic Sensor connect
Connect after forming bridge structure, then be connected the 4th Magnetic Sensor and the 5th Magnetic Sensor connection of electric bridge with formation.
The Three-Dimensional Magnetic sensor chips of 19. planarizations as claimed in claim 13, it is characterised in that first Magnetic Sensor, should
After second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor are independently to manufacture, then it is assembled in the circuit
On chip substrate.
The Three-Dimensional Magnetic sensor chips of 20. planarizations as claimed in claim 13, it is characterised in that first Magnetic Sensor, should
Second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor directly on the circuit chip substrate with physical property or
Chemical sedimentation is formed with etching method.
The Three-Dimensional Magnetic sensor chip of 21. planarizations as claimed in claim 13, it is characterised in that the flux deviation concentrating structure
Bottom surface and first Magnetic Sensor, second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor copline
Or it is slightly above or below first Magnetic Sensor, second Magnetic Sensor, the 4th Magnetic Sensor and the 5th magnetic sensing
The plane of device.
The Three-Dimensional Magnetic sensor chip of 22. planarizations as claimed in claim 13, it is characterised in that the flux deviation concentrating structure
Row cutting again of purchasing in advance is positioned over configured position.
The Three-Dimensional Magnetic sensor chip of 23. planarizations as claimed in claim 13, it is characterised in that the flux deviation concentrating structure
Deposit and be etched in physical property or chemical and formed on the circuit chip substrate.
The Three-Dimensional Magnetic sensor chip of 24. planarizations as claimed in claim 13, it is characterised in that when the first Magnetic Sensor, be somebody's turn to do
When second Magnetic Sensor is collectively aligned, measured flux component for arriving is added, be magnetic flux the first direction or this
The component in two directions, and the flux component is subtracted each other, and is component of the magnetic flux in the third direction；Conversely, when first magnetic is passed
When sensor, the second Magnetic Sensor reversed arrangement, it is measured to flux component subtract each other, be the magnetic flux in the first direction
Or the component of the second direction, and the flux component is added, and is component of the magnetic flux in the third direction, and the 4th magnetic
When sensor and the 5th Magnetic Sensor are collectively aligned, the flux component for measuring is added, be the magnetic flux this second
Direction or the component of the first direction, during reversed arrangement, the flux component for measuring is subtracted each other, and is the magnetic flux in the second party
To or the first direction component.
The Three-Dimensional Magnetic sensor chips of 25. planarizations as claimed in claim 13, it is characterised in that when first Magnetic Sensor,
When second Magnetic Sensor is collectively aligned, the measured flux component for arriving is added, and is the magnetic flux in the first direction or is somebody's turn to do
The component of second direction, and when first Magnetic Sensor, the second Magnetic Sensor reversed arrangement, the measured flux component for arriving
Subtract each other, be the magnetic flux in the first direction or the component of the second direction, and the 4th Magnetic Sensor and the 5th magnetic sensing
When device is collectively aligned, the flux component for measuring is added, be the magnetic flux the second direction or the first direction point
Amount, and the flux component is subtracted each other, and is component of the magnetic flux in the third direction；When the 4th Magnetic Sensor and the 5th magnetic
During sensor reversed arrangement, the flux component for measuring is subtracted each other, and is the magnetic flux in the second direction or the first direction
Component, and flux component be added, be component of the magnetic flux in the third direction.
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| CN101034145A (en) * | 2006-03-10 | 2007-09-12 | 中国科学院物理研究所 | Integrated three-dimensional superconductive composite magnetic field sensor and manufacturing method and use thereof |
| TW201237447A (en) * | 2010-11-23 | 2012-09-16 | Bosch Gmbh Robert | Micro-magnetic field sensor, micro-magnetic field sensor device and method |
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