CN104007401A - Planarized three-dimensional magnetic sensing chip - Google Patents
Planarized three-dimensional magnetic sensing chip Download PDFInfo
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- CN104007401A CN104007401A CN201310055189.XA CN201310055189A CN104007401A CN 104007401 A CN104007401 A CN 104007401A CN 201310055189 A CN201310055189 A CN 201310055189A CN 104007401 A CN104007401 A CN 104007401A
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Abstract
The invention discloses a planarized three-dimensional magnetic sensing chip. The planarized three-dimensional magnetic sensing chip includes a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a magnetic bundle deflection concentration structure which are all disposed on a circuit chip substrate. The first magnetic sensor and the second magnetic sensor together measure a first-direction component and a third-direction component of a magnetic flux. The third magnetic sensor measures a second-direction component of the magnetic flux. The magnetic bundle deflection concentration structure deflects the third-direction component of the magnetic flux to the first direction, so that the first magnetic sensor and the second magnetic sensor measure, in the first direction, the third-direction component of the magnetic flux. The magnetic bundle deflection concentration structure and other magnetic sensors are completed through semiconductor process, a third-direction magnetic sensor does not need to be assembled in a two-segment manner, and therefore the productivity and the yield are substantially improved.
Description
Technical field
The present invention relates to a kind of Three-Dimensional Magnetic sensor chip, especially utilize flux deviation concentrating structure, and can measure at same plane the component of magnetic flux three-dimensional.
Background technology
Magnetic Sensor is widely used in various industries, be mainly used in sensing magnetic field, such as earth magnetic sensor, linear transducer, angular transducer and switch sensor etc. multiple application, use sensing magnetic field and do and comprise direction location or navigate or measure etc. diversity and change.Along with scientific and technological development, for example auto-navigation system, intelligent mobile phone, as the use of navigation, therefore, the demand of magnetic inductor also increases thereupon, by the characteristic of magnetic induction, can promptly be applied in navigation and GPS.Modern electronic product designs all towards the device of several difference in functionalitys being incorporated in a single electronic product, and when the compact design along with electronic product, when reducing integral product volume, the design of magnetic inductor is also tested.
Traditional magnetic inductor is the magnetic inductor that three same structures are set, both are arranged to conplane vertical direction, in order to measure X-axis component and the Y-axis component in magnetic field, and in order to measure another Magnetic Sensor of magnetic field Z axis component, need to both are vertical with other arrange, because the size design of current integrated circuit is more and more less, due to vertical connection, processing procedure needs two-part to carry out, and process connected vertically is difficult to standardization on processing procedure, yield is difficult to improve, easily produce unsuccessfully, and overall cost is improved.
Therefore, need one can reduce overall volume, the magnetic inductor of three directions is arranged to same plane and reduces the sensor construction of the problem on processing procedure.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of Three-Dimensional Magnetic sensor chip of complanation, comprise circuit chip substrate, the first Magnetic Sensor, the second Magnetic Sensor, the 3rd Magnetic Sensor and flux deviation concentrating structure, the first Magnetic Sensor, the second Magnetic Sensor, the 3rd Magnetic Sensor and flux deviation concentrating structure are arranged at the upper surface of circuit chip substrate, and are electrically connected with the circuit in circuit chip substrate.The common component of a magnetic flux at first direction and third direction that measure of the first Magnetic Sensor and the second Magnetic Sensor.The 3rd Magnetic Sensor is in order to measure the component of magnetic flux in second direction, and second direction is mutually vertical in a plane with this first direction, and this third direction is vertical with this second direction with this first direction.
Flux deviation concentrating structure, be arranged between this first Magnetic Sensor and this second Magnetic Sensor, this magnetic flux is concentrated at the component of this third direction, and deviation is to this first direction, thereby on this first direction, measure the component of this magnetic flux at this third direction by this first Magnetic Sensor and this second Magnetic Sensor.
Further, replace the 3rd Magnetic Sensor with one group of the 4th magnetic inductor and the 5th magnetic inductor, flux deviation concentrating structure is arranged between this first Magnetic Sensor and this second Magnetic Sensor, and/or the 4th between Magnetic Sensor and this five Magnetic Sensor, this magnetic flux is concentrated at the component of a third direction, and deviation is to this first direction or this second direction, and on this first direction, measure the component of this magnetic flux at this third direction by this first Magnetic Sensor and this second Magnetic Sensor, or in this second direction, measure the component of this magnetic flux at this third direction by the 4th Magnetic Sensor and the 5th Magnetic Sensor.
Utilize flux deviation concentrating structure can with the first Magnetic Sensor, the second Magnetic Sensor that measure first direction and second direction, the 3rd Magnetic Sensor (or the 4th magnetic strength is surveyed and and the 5th Magnetic Sensor), mode with manufacture of semiconductor completes, or the row cutting again of purchasing is in advance positioned over configured position, or with physical property or chemistry deposition and in addition etching form, can also carry out by damascene structures; Utilize the mode of deviation magnetic flux, measure in the plane three-dimensional magnetic flux, and do not need the Magnetic Sensor with the processing procedure installing third direction of two-part with traditional approach, and significantly improved productive rate and the yield of magnetic inductor.
Brief description of the drawings
Figure 1A is the schematic diagram of Three-Dimensional Magnetic sensor chip first embodiment of complanation of the present invention;
Figure 1B is the schematic diagram of Three-Dimensional Magnetic sensor chip second embodiment of complanation of the present invention;
Fig. 1 C is the schematic diagram of Three-Dimensional Magnetic sensor chip the 3rd embodiment of complanation of the present invention;
Fig. 2 A is the schematic diagram that the magnetic line of force of flux deviation concentrating structure distributes; And
Fig. 2 B is the simple and easy schematic diagram of vector of the magnetic of flux deviation concentrating structure.
Wherein, description of reference numerals is as follows:
The Three-Dimensional Magnetic sensor chip of 1 complanation
The Three-Dimensional Magnetic sensor chip of 2 complanations
The Three-Dimensional Magnetic sensor chip of 3 complanations
10 circuit chip substrates
21 first Magnetic Sensors
23 second Magnetic Sensors
30 the 3rd Magnetic Sensors
31 the 4th Magnetic Sensors
33 the 5th Magnetic Sensors
40 flux deviation concentrating structure
Embodiment
Below coordinate graphic and element numbers to do more detailed description to embodiments of the present invention, to make those skilled in the art can implement according to this with reference to instructions word.
Consult Figure 1A, the schematic diagram of Three-Dimensional Magnetic sensor chip the first embodiment that Figure 1A is complanation of the present invention.As shown in Figure 1A, the Three-Dimensional Magnetic sensor chip 1 of the complanation of the first embodiment comprises a circuit chip substrate 10, one first Magnetic Sensor 21, one second Magnetic Sensor 23, one the 3rd Magnetic Sensor 31, and a flux deviation concentrating structure 40.This first Magnetic Sensor 21, this second Magnetic Sensor 23, the 3rd Magnetic Sensor 30, and this flux deviation concentrating structure 40 is all arranged on the upper surface of circuit chip substrate 10, and with circuit (not visible) electrical connection in circuit chip substrate 10, this first Magnetic Sensor 21 and this second Magnetic Sensor 23 are in order to measure the component of magnetic flux first direction A, the 3rd Magnetic Sensor 30 is in order to measure the component of magnetic flux second direction B, and wherein second direction B is mutually vertical in a plane with first direction A.Flux deviation concentrating structure 40 is arranged between the first Magnetic Sensor 21 and one second Magnetic Sensor 23, the first Magnetic Sensor 21 and one second Magnetic Sensor 23 are based on flux deviation concentrating structure 40 symmetries, the component of magnetic flux third direction C is converted to deviation to first direction A, and can utilize this first Magnetic Sensor 21 and this second Magnetic Sensor 23 to measure the component of third direction C, wherein third direction C is vertical with first direction A and second direction B.
Consult Figure 1B, the schematic diagram of Three-Dimensional Magnetic sensor chip the second embodiment that Figure 1B is complanation of the present invention.As shown in Figure 1B, the Three-Dimensional Magnetic sensor chip 2 of the complanation of the second embodiment is similar to the Three-Dimensional Magnetic sensor chip 1 of the complanation of the first embodiment in fact, just by the first Magnetic Sensor 21, one second Magnetic Sensor 23 changes direction, in order to measure the component of magnetic flux at second direction B, and the 3rd Magnetic Sensor 30 is in order to measure the component of magnetic flux first direction A.Flux deviation concentrating structure 40 is arranged between the first Magnetic Sensor 21 and one second Magnetic Sensor 23, the component of magnetic flux third direction C is converted to deviation to second direction B, and can utilizes this first Magnetic Sensor 21 and this second Magnetic Sensor 23 to measure the component of third direction C.
Consult Fig. 1 C, the schematic diagram of Three-Dimensional Magnetic sensor chip the 3rd embodiment that Fig. 1 C is complanation of the present invention.As shown in Figure 1 C, the 3rd embodiment the Three-Dimensional Magnetic sensor chip 3 of complanation be to be improved by the Three-Dimensional Magnetic sensor chip 1 of the complanation of the first embodiment, just the 3rd Magnetic Sensor 30 is changed into the 4th magnetic inductor 31 and the 5th magnetic inductor 33.This first Magnetic Sensor 21, this second Magnetic Sensor 23, the 4th magnetic inductor 31, the 5th magnetic inductor 33, and this flux deviation concentrating structure 40 is all arranged on the upper surface of circuit chip substrate 10, and with circuit chip substrate 10 in circuit (not visible) electrical connection.This first Magnetic Sensor 21 and this second Magnetic Sensor 23 are in order to measure the component of magnetic flux first direction A, and the 4th magnetic inductor 31 and the 5th magnetic inductor 33 are in order to measure the component of magnetic flux first direction B.Flux deviation concentrating structure 40 is arranged between the first Magnetic Sensor 21 and one second Magnetic Sensor 23, and the 4th between magnetic inductor 31 and the 5th magnetic inductor 33, the component of magnetic flux third direction C is converted to deviation to first direction A or second direction B, and can utilize this first Magnetic Sensor 21 and this second Magnetic Sensor 23, or the 4th magnetic inductor 31 and the 5th magnetic inductor 33 measure the component of third direction C.
Consult Fig. 2 A figure and Fig. 2 B, be respectively schematic diagram and the vectorial simple and easy schematic diagram of the magnetic line of force distribution of flux deviation concentrating structure.As shown in Figure 2 A, flux deviation concentrating structure 40 is concentrated the magnetic line of force of top input therein, and exports lower direction two sides of flux deviation concentrating structure 40.As shown in Figure 2 B, using aforementioned the first embodiment as example.When input the magnetic flux of third direction C above flux deviation concentrating structure 40, and by the magnetic flux deviation of third direction C to first direction A, and export towards both sides, make this first Magnetic Sensor 21, this second Magnetic Sensor 23 measure respectively magnetic flux A1, A2, due to the direction difference of magnetic flux A1, A2, take right side as forward, the magnetic flux of third direction C is essentially A1-A2.And at the input A of first party amount, when the first Magnetic Sensor 21, this second Magnetic Sensor 23 are arranged in the same way, when the first Magnetic Sensor 21, this second Magnetic Sensor 23 measure respectively magnetic flux A1, A2, the magnetic flux essence of first direction is A1+A2, and the magnetic flux of third direction is A1-A2; When the first Magnetic Sensor 21, this second Magnetic Sensor 23 reversed arrangement, the magnetic flux essence of first direction is A1-A2, and the magnetic flux of third direction is A1+A2.So, in fact obviously can separate, and can utilize the first Magnetic Sensor 21, this second Magnetic Sensor 23 to measure the component of magnetic flux in first direction and third party's amount, above only as example, and not in order to limit, in fact various axial computings can be applied.
Understandably, in the time using the first Magnetic Sensor 21, the second Magnetic Sensor 23 and the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33, in the time that the first Magnetic Sensor 21, this second Magnetic Sensor 23 are arranged in the same way, the flux component being measured is added, can be the component of magnetic flux in first direction or second direction, and flux component is subtracted each other, for magnetic flux is at the component of third direction; Otherwise in the time of the first Magnetic Sensor 21, this second Magnetic Sensor 23 reversed arrangement, the flux component being measured is subtracted each other, and can be the component of magnetic flux in first direction or second direction, and flux component is added, for magnetic flux is at the component of third direction.When the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33 are arranged in the same way, the flux component that measurement is arrived is added, and can be the component of magnetic flux at second direction or first direction, when reversed arrangement, measurement to flux component subtract each other, can be the component of magnetic flux at second direction or first direction.
In like manner understandably, when using the first Magnetic Sensor 21, when the second Magnetic Sensor 23 and the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33, when the first Magnetic Sensor 21, when this second Magnetic Sensor 23 is arranged in the same way, the flux component being measured is added, can be the component of magnetic flux in first direction or second direction, the first Magnetic Sensor 21, when this second Magnetic Sensor 23 reversed arrangement, the flux component being measured is subtracted each other, can be the component of magnetic flux in first direction or second direction, when the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33 are arranged in the same way, the flux component that measurement is arrived is added, can be the component of magnetic flux at second direction or first direction, and flux component is subtracted each other, for magnetic flux is at the component of third direction, otherwise when reversed arrangement, the flux component measuring is subtracted each other, and can be the component of magnetic flux at second direction or first direction, and flux component is added, for magnetic flux is at the component of third direction.
This first Magnetic Sensor 21, this second Magnetic Sensor 23, the 3rd Magnetic Sensor 30 (or the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33), can be anisotropy magnetic resistance (anisotropic magnetic resistance, AMR) assembly, giant magnetoresistance (giant magnetic resistance, GMR) assembly, and wear tunnel magnetic resistance (tunneling magnetic reluctance, TMR) assembly at least one of them, each Magnetic Sensor can form independent bridge structure electrical connection each other more separately, or packet chain connects even, for example, this first Magnetic Sensor 21 and this second Magnetic Sensor 30 formation bridge structure that is connected to each other, be electrically connected each other with independent the 3rd sensor 30/ that forms bridge structure or interconnective the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33 again.
This first Magnetic Sensor 21, this second Magnetic Sensor 23, and the 3rd Magnetic Sensor 25 (or the 4th magnetic inductor 31 and the 5th magnetic inductor 33), can be respectively independent manufacture again on this circuit chip substrate 10 of row group device, or directly on this circuit chip substrate 10 with physical property or chemistry sedimentation and etching method formation.
The bottom surface of this flux deviation concentrating structure 40 and the first Magnetic Sensor 21, this second Magnetic Sensor 23, the 3rd Magnetic Sensor 30 (or the 4th Magnetic Sensor 31 and the 5th Magnetic Sensor 33) copline or a little more than or a little less than the plane of magnetic sensing component.This flux deviation concentrating structure 40 is column, and it can be solid cylinder, corner post or the polygon post with any the ratio of width to height, and its magnetoconductivity (permeability) is 1 ~ 10000H/m, for metallicity magnetic material or ceramic magnet material, containing metal magnetic material be iron, cobalt, nickel, ferrocobalt, cobalt-nickel alloy, iron-nickel alloy, iron cobalt nickel alloy and ferro-cobalt boron compound at least one of them.Ceramic magnet material is Ferrite (ferrimagnets), its crystal structure is spinel (spinel), inverse spinel (anti-spinel), and calcium iron ore (perovskite) at least one of them.
This flux deviation concentrating structure 40, can purchase in advance, cut and be positioned over again the position that this circuit chip substrate 10 configures, or deposit with etching with physical property or chemistry, directly on this circuit chip substrate 10, form, for example, on this circuit chip substrate 10, etch in advance column hole, then it is filled up to rear leveling and form with physical property or chemistry deposition.
Feature of the present invention is, flux deviation concentrating structure can with the first Magnetic Sensor, the second Magnetic Sensor that measure first direction and second direction, the 3rd Magnetic Sensor (or the 4th magnetic strength is surveyed and the 5th Magnetic Sensor), mode with manufacture of semiconductor completes, utilize the mode of deviation magnetic flux, measure in the plane three-dimensional magnetic flux, and do not need the Magnetic Sensor with the processing procedure installing third direction of two-part with traditional approach, and significantly improved productive rate and the yield of magnetic inductor.
As described above is only in order to explain preferred embodiment of the present invention; not attempt is done any pro forma restriction to the present invention according to this; therefore, all have under identical invention spirit, do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protection.
Claims (25)
1. a Three-Dimensional Magnetic sensor chip for complanation, is characterized in that, comprises:
One circuit chip substrate;
One first Magnetic Sensor, is arranged at the upper surface of this circuit chip substrate;
One second Magnetic Sensor, is arranged at the upper surface of this circuit chip substrate, with the common component of a magnetic flux at a first direction and a third direction that measure of this first Magnetic Sensor;
One the 3rd Magnetic Sensor, be arranged at the upper surface of this circuit chip substrate, in order to measure the component of this magnetic flux in a second direction, wherein this second direction is mutually vertical in a plane with this first direction, and this third direction is vertical with this second direction with this first direction; And
One flux deviation concentrating structure, be arranged at the upper surface of this circuit chip substrate, be arranged between this first Magnetic Sensor and this second Magnetic Sensor, this magnetic flux is concentrated at the component of this third direction, and deviation is to this first direction, and on this first direction, measure the component of this magnetic flux at this third direction by this first Magnetic Sensor and this second Magnetic Sensor
The wherein circuit electrical connection in this first Magnetic Sensor, this second Magnetic Sensor, the 3rd Magnetic Sensor and this flux deviation concentrating structure and this circuit chip substrate, and this first Magnetic Sensor and this second Magnetic Sensor are based on this flux deviation concentrating structure symmetry.
2. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 1, is characterized in that, this flux deviation concentrating structure is column, and is solid cylinder, corner post, and one of them of polygon post.
3. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 1, is characterized in that, this flux deviation concentrating structure is a containing metal magnetic material or a ceramic magnet material, and the magnetoconductivity of this flux deviation concentrating structure is 1 ~ 10000H/m.
4. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 3, is characterized in that, this containing metal magnetic material be iron, cobalt, nickel, ferrocobalt, cobalt-nickel alloy, iron-nickel alloy, iron cobalt nickel alloy and ferro-cobalt boron compound at least one of them.
5. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 3, is characterized in that, this ceramic magnet material is Ferrite, and the crystal structure of this ceramic magnet material is spinel, inverse spinel, and calcium iron ore at least one of them.
6. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 1, it is characterized in that, this first Magnetic Sensor and this second Magnetic Sensor, if becoming in the same way, it arranges, this flux component of obtaining adds up to the component of this this magnetic flux at this first direction, its this flux component obtaining is subtracted each other, and is the component of this magnetic flux at this third direction; If it becomes reversed arrangement, this flux component is kept to the component of this magnetic flux at this first direction mutually, and it obtains this flux component and is added, and is the component of this magnetic flux at this third direction; The 3rd Magnetic Sensor independently measures the component of this magnetic flux in this second direction.
7. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 1, it is characterized in that, this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, for anisotropy magnetoresistive component, giant magnetoresistance assembly, and wear tunnel magnetoresistive component at least one of them, this first Magnetic Sensor, this second Magnetic Sensor, the 3rd Magnetic Sensor form the electrical connection each other again of independent bridge structure, or this first Magnetic Sensor, this second Magnetic Sensor are connected to form after bridge structure, then are connected with the 3rd magnetic inductor of independent bridge structure.
8. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 1, is characterized in that, this first Magnetic Sensor, this second Magnetic Sensor, and the 3rd Magnetic Sensor is for independently manufacturing respectively on this circuit chip substrate of row group device again.
9. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 1, is characterized in that, this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor directly form with physical property or chemistry sedimentation and etching method on this circuit chip substrate.
10. the Three-Dimensional Magnetic sensor chip of complanation as claimed in claim 1, it is characterized in that, the bottom surface of this flux deviation concentrating structure and this first Magnetic Sensor, this second Magnetic Sensor, the 3rd Magnetic Sensor copline a little more than or a little less than the plane of this first Magnetic Sensor, this second Magnetic Sensor, the 3rd Magnetic Sensor.
The Three-Dimensional Magnetic sensor chip of 11. complanations as claimed in claim 1, is characterized in that, this flux deviation concentrating structure is purchased in advance to go to cut again and is positioned over configured position.
The Three-Dimensional Magnetic sensor chip of 12. complanations as claimed in claim 1, is characterized in that, this flux deviation concentrating structure physical property or chemistry deposit and are etched on this circuit chip substrate and form.
The Three-Dimensional Magnetic sensor chip of 13. 1 kinds of complanations, is characterized in that, comprises:
One circuit chip substrate;
One first Magnetic Sensor, is arranged at the upper surface of this circuit chip substrate;
One second Magnetic Sensor, is arranged at the upper surface of this circuit chip substrate, with the common magnetic flux that measures of this first Magnetic Sensor at a first direction component;
One the 4th Magnetic Sensor, is arranged at the upper surface of this circuit chip substrate;
One the 5th Magnetic Sensor, is arranged at the upper surface of this circuit chip substrate, and at a second direction component, this second direction is mutual vertical in a plane with this first direction with the common magnetic flux that measures of the 4th Magnetic Sensor; And
One flux deviation concentrating structure, be arranged at the upper surface of this circuit chip substrate, be arranged between this first Magnetic Sensor and this second Magnetic Sensor, and/or the 4th between Magnetic Sensor and this five Magnetic Sensor, this magnetic flux is concentrated at the component of a third direction, and deviation is to this first direction or this second direction, and on this first direction, measure the component of this magnetic flux at this third direction by this first Magnetic Sensor and this second Magnetic Sensor, or in this second direction, measure the component of this magnetic flux at this third direction by the 4th Magnetic Sensor and the 5th Magnetic Sensor,
Wherein this third direction is vertical with this second direction with this first direction, the wherein circuit electrical connection in this first Magnetic Sensor, this second Magnetic Sensor, the 4th Magnetic Sensor, the 5th Magnetic Sensor and this flux deviation concentrating structure and this circuit chip substrate, this first Magnetic Sensor and this second Magnetic Sensor, and/or the 4th Magnetic Sensor and the 5th Magnetic Sensor are based on this flux deviation concentrating structure symmetry.
The Three-Dimensional Magnetic sensor chip of 14. complanations as claimed in claim 13, is characterized in that, this flux deviation concentrating structure is column, and is solid cylinder, corner post, and one of them of polygon post.
The Three-Dimensional Magnetic sensor chip of 15. complanations as claimed in claim 13, is characterized in that, this flux deviation concentrating structure is a containing metal magnetic material or a ceramic magnet material, and the magnetoconductivity of this flux deviation concentrating structure is 1 ~ 10000H/m.
The Three-Dimensional Magnetic sensor chip of 16. complanations as claimed in claim 15, is characterized in that, this containing metal magnetic material be iron, cobalt, nickel, ferrocobalt, cobalt-nickel alloy, iron-nickel alloy, iron cobalt nickel alloy and ferro-cobalt boron compound at least one of them.
The Three-Dimensional Magnetic sensor chip of 17. complanations as claimed in claim 15, is characterized in that, this ceramic magnet material is Ferrite, and the crystal structure of this this ceramic magnet material is spinel, inverse spinel, and calcium iron ore at least one of them.
The Three-Dimensional Magnetic sensor chip of 18. complanations as claimed in claim 13, it is characterized in that, this first Magnetic Sensor, this second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor, for anisotropy magnetoresistive component, giant magnetoresistance assembly, and wear tunnel magnetoresistive component at least one of them, this first Magnetic Sensor, this second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor form the electrical connection each other again of independent bridge structure, or this first Magnetic Sensor, this second Magnetic Sensor is connected to form after bridge structure, the 4th Magnetic Sensor and the 5th Magnetic Sensor that are connected electric bridge with formation connect again.
The Three-Dimensional Magnetic sensor chip of 19. complanations as claimed in claim 13, it is characterized in that, this first Magnetic Sensor, this second Magnetic Sensor, this first Magnetic Sensor, this second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor are for independently manufacturing respectively on this circuit chip substrate of row group device again.
The Three-Dimensional Magnetic sensor chip of 20. complanations as claimed in claim 13, it is characterized in that, this first Magnetic Sensor, this second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor directly form with physical property or chemistry sedimentation and etching method on this circuit chip substrate.
The Three-Dimensional Magnetic sensor chip of 21. complanations as claimed in claim 13, it is characterized in that, the bottom surface of this flux deviation concentrating structure and this first Magnetic Sensor, this second Magnetic Sensor, the 3rd Magnetic Sensor copline a little more than or a little less than the plane of this first Magnetic Sensor, this second Magnetic Sensor, the 4th Magnetic Sensor and the 5th Magnetic Sensor device.
The Three-Dimensional Magnetic sensor chip of 22. complanations as claimed in claim 13, is characterized in that, this flux deviation concentrating structure is purchased in advance to go to cut again and is positioned over configured position.
The Three-Dimensional Magnetic sensor chip of 23. complanations as claimed in claim 13, is characterized in that, this flux deviation concentrating structure physical property or chemistry deposit and are etched on this circuit chip substrate and form.
The Three-Dimensional Magnetic sensor chip of 24. complanations as claimed in claim 13, it is characterized in that, in the time that the first Magnetic Sensor, this second Magnetic Sensor are arranged in the same way, this flux component being measured is added, for magnetic flux is at the component of this first direction or this second direction, and this flux component is subtracted each other, for magnetic flux is at the component of this third direction, otherwise, when this first Magnetic Sensor, when this second Magnetic Sensor 23 reversed arrangement, the flux component being measured is subtracted each other, for this magnetic flux is at the component of this first direction or this second direction, and this flux component is added, for this magnetic flux is at the component of this third direction, and the 4th Magnetic Sensor and the 5th Magnetic Sensor are while arranging in the same way, this flux component that measurement is arrived is added, for this magnetic flux is at the component of this second direction or this first direction, when reversed arrangement, measurement to flux component subtract each other, for this magnetic flux is at the component of this second direction or this first direction.
The Three-Dimensional Magnetic sensor chip of 25. complanations as claimed in claim 13, it is characterized in that, when this first Magnetic Sensor, when this second Magnetic Sensor is arranged in the same way, the flux component being measured is added, can be the component of this magnetic flux in this first direction or this second direction, and this first Magnetic Sensor, when this second Magnetic Sensor reversed arrangement, the flux component being measured is subtracted each other, can be the component of this magnetic flux in this first direction or this second direction, and the 4th Magnetic Sensor and the 5th Magnetic Sensor are while arranging in the same way, this flux component that measurement is arrived is added, for this magnetic flux is at the component of this second direction or this first direction, and this flux component is subtracted each other, for this magnetic flux is at the component of this third direction, in the time of this 4th Magnetic Sensor and the 5th Magnetic Sensor reversed arrangement, this flux component measuring is subtracted each other, and for this magnetic flux is at the component of this second direction or this first direction, and flux component is added, for this magnetic flux is at the component of this third direction.
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Cited By (1)
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| CN105449096A (en) * | 2015-11-17 | 2016-03-30 | 四川大学 | Magnetic thin film structure, manufacturing and usage methods thereof, magnetic sensitive sensing unit and array |
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| CN105449096A (en) * | 2015-11-17 | 2016-03-30 | 四川大学 | Magnetic thin film structure, manufacturing and usage methods thereof, magnetic sensitive sensing unit and array |
| CN105449096B (en) * | 2015-11-17 | 2017-10-24 | 四川大学 | Magnetic film structure and its manufacture, application method and magnetosensitive sensing unit, array |
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