WO2007072867A1

WO2007072867A1 - Feedstock supply unit and vapor deposition equipment

Info

Publication number: WO2007072867A1
Application number: PCT/JP2006/325392
Authority: WO
Inventors: Masaji Inoue; Toshihisa Nozawa
Original assignee: Tokyo Electron Limited
Priority date: 2005-12-22
Filing date: 2006-12-20
Publication date: 2007-06-28
Also published as: JP2007169728A; CN101278073A; KR20080045253A; TW200738895A; CN101278073B; KR100981474B1

Abstract

A feedstock supply unit for evaporating or sublimating feedstock and supplying the resulting vapor to a treatment vessel in vapor deposition equipment, which is equipped with a feedstock vessel for holding the feedstock, a gas introduction port for supplying a carrier gas to the inside of the feedstock vessel, and a gas discharge port for discharging the evaporated or sublimated feedstock together with the carrier gas in order to supply them to the treatment vessel, characterized in that the feedstock vessel is provided with a gas flow controller for controlling the flow of the carrier gas in the inside thereof.

Description

Specification

Raw material supply device and vapor deposition device

Technical field

The present invention relates to a vapor deposition apparatus and a raw material supply apparatus used for the vapor deposition apparatus.

Background art

[0002] As an example of a method for forming a thin film on the surface of a substrate to be processed, there is a vapor deposition method. The vapor deposition method is a method of forming a thin film by evaporating, for example, a vapor deposition raw material evaporated or sublimated on a substrate to be processed.

[0003] For example, as a thin film formed by a vapor deposition method, there is a thin film used for an organic electo-minescence (hereinafter referred to as EL) element. Display devices using organic EL elements are easy to miniaturize, can emit light with low power consumption, and can significantly reduce the applied voltage compared to liquid crystal displays. The use in various display devices is attracting attention.

[0004] For example, an organic EL element has a structure in which a light emitting layer is formed between an anode and a cathode. The light-emitting layer is a layer that emits light by recombination of electrons and holes. For the light-emitting layer, for example, a material such as a polycyclic aromatic hydrocarbon, a heteroaromatic compound, or an organometallic complex compound is used. The above materials can be formed by vapor deposition. In addition, a thin film for improving luminous efficiency such as a hole transporting layer or an electron transporting layer can be formed between the anode and the light emitting layer or between the cathode and the light emitting layer as necessary. These layers can also be formed by vapor deposition.

[0005] In this case, the vapor deposition apparatus used for forming the thin film described above, for example, a processing container capable of maintaining the inside in a reduced pressure state, and vaporizing or evaporating or sublimating the vapor deposition raw material installed in the processing container. And a vapor deposition source evaporated or evaporated or sublimated from the vapor deposition source is deposited on the substrate to be processed. However, when a thin film is formed by a vapor deposition apparatus, there has been a problem that it is difficult to control the amount of vapor deposition material evaporated or sublimated from the vapor deposition source.

[0006] This is because the amount of vapor deposition material per unit time that evaporates or sublimates from the vapor deposition source is an example. For example, it may be caused by a change in time, a slight change in the amount of vapor deposition raw material held in the vapor deposition source, or the temperature of the vapor deposition source. For this reason, it was difficult to stabilize the deposition rate of the deposited film, and the film deposition rate changed, resulting in variations in film thickness.

[0007] In addition, in the above-mentioned Patent Document 1 (Japanese Patent Publication No. 2003-502494), the evaporation of the evaporation material is carried out by installing a baffle plate (perforated plate) in the container of the evaporation source! An invention to stabilize is described. However, in the above structure, the carrier gas for supplying the evaporated or sublimated raw material is not used, and the flow of the carrier gas is not taken into consideration. For this reason, when the above-described kaffle plate is used, the film formation speed is remarkably reduced when the amount of raw material supplied to the vapor deposition apparatus is small.

Patent Document 1: Special Table 2003-502494

Disclosure of the invention

Problems to be solved by the invention

Accordingly, an object of the present invention is to provide a new and useful vapor deposition apparatus that solves the above problems.

[0009] A specific problem of the present invention is a raw material supply apparatus used in a vapor deposition apparatus, the raw material supply apparatus in which the stability of the deposition rate of the vapor deposition apparatus is good, and the vapor deposition including the raw material supply apparatus Is to provide a device.

Means for solving the problem

[0010] In a first aspect of the present invention, the above-described problem is a raw material supply apparatus that supplies a raw material by evaporating or sublimating it to a processing container of a vapor deposition apparatus, and the raw material that holds the raw material therein. A gas container, a gas inlet for supplying a carrier gas into the raw material container, and a gas outlet for supplying the raw material evaporated together with the carrier gas to the processing container. The problem is solved by a raw material supply device characterized in that a gas flow control unit for controlling the flow of the carrier gas is provided inside the raw material container.

[0011] Further, according to a second aspect of the present invention, the above-described problems are solved by a processing container that holds a substrate to be processed inside, and a raw material supply that feeds the processing container by evaporating the raw material. A vapor deposition apparatus that vaporizes the sublimated raw material. The raw material supply device includes a raw material container for holding the raw material therein, a gas inlet for supplying a carrier gas to the inside of the raw material container, and the raw material evaporated or sublimated together with the carrier gas. And a gas discharge port for supplying the gas to the processing container, and a gas flow control unit for controlling the flow of the carrier gas is provided inside the raw material container. .

The invention's effect

[0012] According to the present invention, there are provided a raw material supply device used in a vapor deposition apparatus, a raw material supply apparatus in which the stability of the film formation rate of the vapor deposition apparatus is good, and a vapor deposition apparatus having the raw material supply apparatus. Is possible.

Brief Description of Drawings

FIG. 1 is a cross-sectional view of a raw material supply apparatus according to Embodiment 1.

FIG. 2 is a cross-sectional view of a raw material supply apparatus according to Embodiment 2.

FIG. 3 is a cross-sectional view of a raw material supply apparatus according to Embodiment 3.

FIG. 4 shows a vapor deposition apparatus according to Example 4.

Explanation of symbols

[0014] 100 raw material supply device

101 Cylindrical container

102 Lid

103 Raw material container

102A Gas flow control unit

102a Support

102b, 102c, 102d Protrusion

103A interior space

104 Gas inlet

105 Gas introduction path

106 Gas outlet

107 Gas inlet

108 Gas exhaust passage 109 Huinoleta

110 Gas conductor line

11 OA valve

110B connection

111 Gas outlet line

111A valve

111B connection

112 Sinore wood

113 Heater

200 Vapor deposition equipment

201, 202 Processing container

203 Holding stand

204 Substrate

205 Moving Lenore

206 Exhaust cover

206A hole

207 alignment equipment

208 Exhaust means

208A exhaust line

209 Raw material mixing section

209A, 209B, 209C 209D Raw material mixing chamber

210 Raw material supply nozzle

211 Gate valve

212A, 212B, 212C 212D Gas line

213A, 213B, 213C 214A, 214B, 214C, 215A, 215B, 216A, 216B

217A, 217B, 217C MFC

218 Carrier gas supply source 300 Transfer robot

BEST MODE FOR CARRYING OUT THE INVENTION

Next, embodiments of the present invention will be described below with reference to the drawings.

Example 1

First, the raw material supply apparatus according to Example 1 will be described. The raw material supply apparatus is an apparatus for evaporating or sublimating the raw material and supplying it to a processing vessel of a vapor deposition apparatus (configuration example will be described later). The vapor deposition apparatus has a processing container for holding the substrate to be processed, and the raw material supply apparatus according to this embodiment supplies the raw material evaporated or sublimated to the processing container.

FIG. 1 is a cross-sectional view schematically showing a raw material supply apparatus according to Embodiment 1 of the present invention.

Referring to FIG. 1, in a raw material supply apparatus 100 according to this embodiment, a raw material container 103 is formed by combining a cylindrical container 101 and a lid 102, and an internal space is formed inside the raw material container 103. 103A is defined. The internal space 103A holds a raw material 100A that is solid (eg, powder) at normal temperature * normal pressure. A heater 113 is installed outside the raw material container 103, and the raw material 100A is evaporated or sublimated by being heated by the heater 113.

[0019] The cylindrical container 101 has a substantially cylindrical shape with one end opened, and a flange for attaching the lid 102 is formed on the opened side of the cylindrical shape. The lid 102 is attached to the cylindrical container 101 so as to close the opening of the cylindrical container 101, and a sealing material 112 is inserted between the lid 102 and the cylindrical container 101, so that the internal space Airtightness of 103A is maintained.

[0020] Further, the lid 102 is provided with a gas flow control unit 102A that extends into the internal space 103A. Details of the gas flow control unit 102A will be described later.

The lid 102 is connected to a gas introduction line 110 for introducing a carrier gas into the internal space 103A. The carrier gas introduced from the gas introduction line 110 passes through the gas introduction path 107 formed in the lid portion 102 and the gas introduction path 105 formed in the cylindrical container 101. The gas is introduced into the internal space 103A through a gas inlet 104 formed on the side opposite to the side to which the lid 102 is attached (the first side of the raw material container 103). [0022] The carrier gas introduced into the internal space 103A from the gas inlet 104 is evaporated or sublimated with the raw material 100A (hereinafter referred to as gas raw material), and the lid 102 (opposite the first side). It is discharged from the gas discharge port 106 formed on the second side).

The carrier gas and the gas raw material discharged from the internal space 103A are discharged to a gas discharge line 111 connected to the lid portion 102 via a gas discharge path 108 formed in the lid portion 102. The The gas discharge line 111 is connected to a processing container of a vapor deposition apparatus, which will be described later, and has a structure in which a gaseous raw material is supplied to the processing container through the discharge line 111 together with a carrier gas.

[0024] The raw material supply apparatus according to the present embodiment is characterized in that the gas flow control unit 102A for controlling the flow of the carrier gas is formed in the internal space 103. The raw material 100A is held in the raw material container 103 so as to face the gas flow control unit 102A. In this case, the carrier gas flows between the gas flow control unit 102A and the raw material 100A.

[0025] The gas flow control unit 102A controls the flow of the carrier gas supplied to the internal space 103A. For example, by setting the Reynolds number of the carrier gas flow to 1000 or more, the carrier gas flow is turbulent. It can be.

[0026] For this reason, evaporation or sublimation of the raw material 100A is promoted, and in the vicinity of the discharge port 106 of the internal space 103A, a state in which the evaporation or sublimation of the raw material 100A is saturated, V, a so-called saturated vapor pressure. be able to.

[0027] For example, when trying to supply a gaseous raw material at a saturation vapor pressure or lower, the amount of evaporation or sublimation varies greatly according to slight changes in various factors, and thus a film is formed on a substrate to be processed. There may be a problem that the film formation rate changes greatly. For example, when the deposition progresses and time elapses, it is very difficult to completely suppress phenomena associated with changes in various conditions and changes in the amount of raw material that is retained. The impact on the situation may not be negligible.

On the other hand, in the raw material supply apparatus according to the present embodiment, the gaseous raw material is discharged at the saturated vapor pressure, so that the gaseous raw material can be stably supplied to the processing container of the vapor deposition apparatus.

[0029] The gas flow control unit 102A includes the gas introduction port 104 to the gas discharge port 106 (the above-mentioned The first side force is also formed to extend in the direction of the second side). That is, the gas flow control unit 102A is formed to extend along the flow of the carrier gas. For this reason, the flow of the carrier gas can be controlled efficiently.

[0030] Further, the gas flow rate control unit 102A includes a flat plate-like support part 102a extending from the first side to the second side, and the first side force is also applied to the support part 102a over the second side. A plurality of protrusions 102b are formed. The carrier gas introduced from the introduction port 104 is controlled in flow by the protrusion 102b, and the Reynolds number is increased to form turbulent flow. For this reason, the gas flow control unit 102A is preferably formed with a sufficient length to control the flow of the carrier gas.

[0031] In addition, it is preferable that a filter 109 is formed in the gas discharge path 108 in order to prevent the powdery raw material 100A from scattering to the processing container side.

In addition, valves 110A and 111A are installed in the gas introduction line 110 and the gas discharge line 111, respectively. Further, connecting portions 110B and 111B made of, for example, a pipe joint are connected to the gas introduction line 110 and the gas discharge line 111, respectively. Therefore, by removing the pipe joints of the connecting portions 110B and 11IB in the state where the nozzles 110A and 111A are closed, the raw material supply apparatus 100 can be easily removed from the vapor deposition apparatus (processing vessel). Become.

That is, when the raw material supply apparatus 100 is replenished with raw materials or when the raw material supply apparatus 100 is maintained, the raw material supply apparatus 100 can be easily attached and detached from the vapor deposition apparatus. ! RU

Example 2

In addition, the structure of the gas flow control unit is not limited to the structure shown in the first embodiment, and can be modified and changed in various ways.

For example, FIG. 2 is a cross-sectional view schematically showing a raw material supply apparatus 100A according to Example 2 of the present invention. However, in the figure, the same reference numerals are given to the parts described above, and the description will be omitted. In addition, parts that are not particularly described are the same as those of the first embodiment.

Referring to FIG. 2, in the case of the present embodiment, the protrusion 102c is longer (larger) than the protrusion 102b in the case of Example 1, and the tip reaches the raw material 100A. . Of this example In this case, since the carrier gas passes through the inside of the raw material 100A, there is a feature that it is easy to reach the saturated vapor pressure.

Example 3

[0037] FIG. 3 is a cross-sectional view schematically showing a raw material supply apparatus 100A according to Example 3 of the present invention. However, in the figure, the same reference numerals are given to the parts described above, and the description will be omitted. In addition, parts that are not particularly described are the same as those of the first embodiment.

[0038] Referring to FIG. 2, in the case of this example, the cross-sectional shape of the protrusion 102d is different from that of Example 1, whereas in Example 1, the cross-sectional shape was a square. In the present embodiment, the shape is triangular and the tip is sharp. As described above, the shape of the protrusion may be variously changed or changed in accordance with the conditions for controlling the flow of the carrier gas (for example, the flow rate), the difference in the raw material (for example, the difference in vapor pressure).

Example 4

Next, an example of the configuration of a vapor deposition apparatus using the raw material supply apparatus 100 described above will be described with reference to FIG. FIG. 4 is a diagram schematically showing an example of the configuration of the vapor deposition apparatus according to Example 4 of the present invention.

Referring to FIG. 4, a vapor deposition apparatus 200 according to the present embodiment includes a processing container 201 in which an internal space 201A is defined, and a processing container 202 connected to the processing container 201. ing. A holding table 203 for holding the substrate to be processed 204 is installed in the internal space 201A. The holding table 203 has an ESC (electrostatic chuck), and the substrate to be processed is held such that the surface thereof faces the direction in which the raw material is supplied. The holding table 203 is connected to the moving rail 205 so as to be movable, and is configured to be movable in a direction parallel to the substrate 204 to be processed.

[0041] When the substrate to be processed 204 is carried into the processing container 201, the gate valve 211 installed in the processing container 201 is opened, and installed in a vacuum transfer chamber (not shown), for example. It is carried in by the transport robot 300. The loaded substrate to be processed is aligned by the alignment device 207 and then held on the holding table 203.

[0042] Further, the internal space 201A is connected to the processing vessel 201, for example, a turbo component. The air is exhausted by an exhaust means 208 comprising a child pump, and the pressure is reduced. An exhaust line 208A is connected to the exhaust means 208, and the exhaust line 208A is connected to an exhaust means (not shown) such as a dry pump.

In addition, a raw material supply unit 209 that supplies a gaseous raw material to the internal space 201 A is installed in the opening on the bottom surface of the processing container 201 so as to face the holding table 203. When film formation (evaporation) is performed on the substrate to be processed 204, the gas material supplied from the material supply unit 209 reaches the substrate to be processed.

In addition, the processing container 202 is exposed to the outside of the bottom surface of the processing container 201, and covers the exhaust unit 208, the raw material supply unit 209, and the alignment device so as to cover the bottom surface of the processing container 201. Connected to the side!

[0045] The raw material supply unit 209 has a plurality of mixing chambers in which a plurality of gaseous raw materials are mixed.

For example, the raw material supply unit 209 may have a structure in which raw material mixing chambers 209A, 209B, 209C, and 209D force are arranged in parallel along the moving direction of the substrate 204 to be processed. A raw material supply nozzle 210 is installed in each of the raw material mixing chambers 209A, 209B, 209C, and 209D, and the gaseous raw material mixed in each raw material mixing chamber is supplied from the raw material supply nozzle 210 to the internal space 201. A is supplied to A and deposited on the substrate to be processed 204 to form a film.

[0046] The raw material mixing chambers 209A, 209B, 209C, and 209D are connected to gas lines 21 2A, 212B, 212C, and 212D respectively, and the gas lines 212A, 21 2B, 212C, And 212D are connected to the raw material supply apparatus 100 described above with reference to FIG.

For example, the gas line 212A will be described as an example. The gas line 212A is connected to the mixing chamber 209A and is formed to extend to the outside of the processing vessel 202. The plurality of raw material supply apparatuses 100 are connected to the outside.

[0048] In this case, the gas line 212A is connected to the gas discharge lines 111 of the three raw material supply apparatuses 100 via the nozzles 213A, 213B, and 213C, respectively. In other words, three raw material supply devices are connected to the raw material mixing chamber 209A via the gas line 212A, and three kinds of gaseous raw materials are supplied and mixed. Raw material The gas raw material mixed in the mixing chamber 209A is supplied from the gas supply nozzle 210 to the internal space 201A.

[0049] In addition, each of the gas introduction lines 110 of the three raw material supply apparatuses 100 includes valves 214A, 214B, and 214C, and MFCs (mass flow controllers) 217A, 217B, and 217C, respectively. For example, a carrier gas such as Ar is supplied to the carrier gas supply source 218. In the drawing, the details (for example, the internal structure) of the raw material supply apparatus 100 shown in FIG. 1 are not shown.

[0050] Similarly, the gas line 212D is connected to the mixing chamber 209D and formed to extend to the outside of the processing vessel 202, and a plurality of the raw material supply devices are provided outside the processing vessel 202. Connected with 100.

[0051] In this case, the gas line 212D is connected to the gas discharge lines 111 of the two raw material supply apparatuses 100 via the nozzles 215A and 215B, respectively. That is, two raw material supply devices are connected to the raw material mixing chamber 209D via the gas line 212D, and two kinds of gas raw materials are supplied and mixed. The gaseous raw material mixed in the raw material mixing chamber 209D is supplied from the gas supply nozzle 210 to the internal space 201A.

[0052] Further, each of the gas introduction lines 110 of the two raw material supply devices 100 is connected to the carrier gas supply source 218 via valves 216A and 216B, respectively. Illustration of the connection line is omitted.

[0053] Similarly to the gas lines 212A and 212D described above, a plurality of raw material supply apparatuses 100 are connected to the gas lines 212B and 212C (not shown), and the raw material mixing chambers 209B and 209B, respectively. Also in 209C, a plurality of gaseous raw materials are mixed and supplied to the internal space 201A.

Further, an exhaust cover 206 having a hole portion 206 A through which the gas supply nozzle 210 is exposed may be installed on the bottom surface of the processing container 201. The exhaust cover is installed so as to cover the raw material supply unit 209 together with the exhaust unit 208, and suppresses mixing of gaseous raw materials supplied from a plurality of raw material mixing chambers before reaching the substrate to be processed. Then! [0055] As described above, in the vapor deposition apparatus 200 according to the present embodiment, by using the raw material supply apparatus 100 described in the first embodiment, it is possible to stably deposit a gas raw material to form a film. In addition, the film forming speed is stable.

[0056] Further, in the above-described film forming apparatus, a film having a plurality of raw materials can be formed. Further, by moving the holding table 203 during film formation, it is possible to form a film having a complicated structure by further stacking films containing a plurality of raw materials. Therefore, it is suitable for forming a light emitting element such as an organic EL element.

[0057] For example, by using the film forming apparatus 200 described above, an organic EL element in which a hole transport layer, a light emitting layer, and an electron transport layer are stacked can be formed. In this case, for example, an aluminoquinolinol complex (Alq3) can be used for the host material of the light emitting layer, and rubrene can be used for the doping material.

In addition, the above-described vapor deposition apparatus is not limited to the organic EL element, and it is possible to form vapor deposition films for various other purposes.

[0059] While the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the specific embodiments described above, and various modifications can be made within the spirit and scope of the claims. · Change is possible.

Industrial applicability

[0060] According to the present invention, there are provided a raw material supply apparatus used in a vapor deposition apparatus, the raw material supply apparatus in which the stability of the deposition rate of the vapor deposition apparatus is good, and the vapor deposition apparatus having the raw material supply apparatus. Is possible.

[0061] This international application claims priority based on the Japanese patent application 2005-369898 filed on December 22, 2005. The entire contents of 2005-369898 are hereby incorporated by reference. Incorporate.

Claims

The scope of the claims

[1] A raw material supply apparatus for evaporating or sublimating a raw material into a processing container of a vapor deposition apparatus,

A raw material container for holding the raw material therein;

A gas inlet for supplying a carrier gas into the raw material container;

A gas outlet for supplying the raw material evaporated or sublimated together with the carrier gas to the processing vessel,

A raw material supply apparatus, wherein a gas flow control unit for controlling the flow of the carrier gas is provided inside the raw material container.

2. The raw material supply apparatus according to claim 1, wherein the gas flow control unit includes a protrusion formed inside the raw material container.

[3] The raw material supply apparatus according to claim 2, wherein a plurality of the protrusions are formed!

4. The raw material supply apparatus according to claim 2, wherein the raw material is configured to be held in the raw material container so as to face the protruding portion.

[5] The gas inlet is formed on the first side of the raw material container, and the gas outlet is formed on the second side opposite to the first side of the raw material container. The raw material supply apparatus according to claim 1.

6. The raw material supply apparatus according to claim 5, wherein the gas flow control unit is formed between the first side and the second side!

[7] A processing container that holds the substrate to be processed inside, and a raw material supply device that supplies the processing container by evaporating or sublimating the raw material, and supplying the raw material evaporated or sublimated to the processing substrate. A vapor deposition apparatus for vapor deposition,

The raw material supply device

A raw material container for holding the raw material therein;

A gas inlet for supplying a carrier gas into the raw material container;

A gas outlet for supplying the raw material evaporated or sublimated together with the carrier gas to the processing vessel, A vapor deposition apparatus, wherein a gas flow control unit for controlling the flow of the carrier gas is provided inside the raw material container.

8. The vapor deposition apparatus according to claim 7, wherein the gas flow control unit includes a protrusion formed inside the raw material container.

[9] The vapor deposition apparatus according to [8], wherein a plurality of the protrusions are formed!

10. The vapor deposition apparatus according to claim 8, wherein the raw material is configured to be held in the raw material container so as to face the protruding portion.

[11] The gas inlet is formed on the first side of the raw material container, and the gas outlet is formed on the second side opposite to the first side of the raw material container. The vapor deposition apparatus according to claim 7.

12. The vapor deposition apparatus according to claim 11, wherein the gas flow control unit is formed between the first side and the second side!

13. The vapor deposition apparatus according to claim 7, wherein a plurality of the raw material supply apparatuses are installed.

14. The vapor deposition apparatus according to claim 13, further comprising a mixing chamber for mixing evaporated or sublimated raw materials supplied from the plurality of raw material supply apparatuses.

15. The vapor deposition apparatus according to claim 14, comprising a plurality of the mixing chambers.

16. The vapor deposition apparatus according to claim 7, wherein the raw material supply apparatus is installed outside the processing container, and the raw material supply apparatus is configured to be detachable from the processing container.