CN101278073B - Feedstock supply unit and vapor deposition equipment - Google Patents
Feedstock supply unit and vapor deposition equipment Download PDFInfo
- Publication number
- CN101278073B CN101278073B CN2006800365146A CN200680036514A CN101278073B CN 101278073 B CN101278073 B CN 101278073B CN 2006800365146 A CN2006800365146 A CN 2006800365146A CN 200680036514 A CN200680036514 A CN 200680036514A CN 101278073 B CN101278073 B CN 101278073B
- Authority
- CN
- China
- Prior art keywords
- supply unit
- coating device
- evaporation coating
- raw material
- feedstock supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
A feedstock supply unit for evaporating or sublimating feedstock and supplying the resulting vapor to a treatment vessel in vapor deposition equipment, which is equipped with a feedstock vessel for holding the feedstock, a gas introduction port for supplying a carrier gas to the inside of the feedstock vessel, and a gas discharge port for discharging the evaporated or sublimated feedstock together with the carrier gas in order to supply them to the treatment vessel, characterized in that the feedstock vessel is provided with a gas flow controller for controlling the flow of the carrier gas in the inside thereof.
Description
Technical field
The present invention relates to evaporation coating device and be used for the feedstock supply unit of this evaporation coating device.
Background technology
Vapour deposition method is one of method that forms on the surface of processed substrate film etc.The evaporation raw material evaporation that vapour deposition method will be evaporated or distil forms film on processed substrate.
Be useful on the film of organic electroluminescent (below be expressed as EL) element in the film that forms by vapour deposition method.Use the display unit of EL element to be easy to miniaturization, consumed power is little, the face of can realizing is luminous, compare with liquid-crystal display to reduce significantly and apply voltage, therefore be subjected to extensively attracting attention in various field of display devices such as flat-panel screens.
Organic EL has the structure that forms luminescent layer between anode and negative electrode.This luminescent layer is that luminescent layer can use materials such as polycyclic aromatic hydrocarbons, heterocyclic aromatic compound, organometallic complex by the electronics layer luminous with combining again of hole, and above-mentioned materials can form luminescent layer by vapour deposition method.And, can between anode and luminescent layer, perhaps between negative electrode and luminescent layer, form the film that hole transporting layer or electron supplying layer etc. can improve luminous efficiency as required, these layers also can form by vapour deposition method.
The evaporation coating device that is used to form above-mentioned film has the processing vessel that can keep the inner pressure relief state, is arranged on the vapor deposition source that makes evaporation material gasification, evaporation or distillation in this processing vessel, by the evaporation raw material of vapor deposition source gasification, evaporation or distillation by evaporation to processed substrate.But, when forming film, the problem that is difficult to control by the evaporation material quantity of vapor deposition source evaporation or distillation is arranged by evaporation coating device.
This is owing to change caused by the vapor deposition source material amount of vapor deposition source evaporation or distillation according to institute's elapsed time, evaporation material quantity that vapor deposition source had or the subtle change of vapor deposition source temperature in the unit time.Therefore, be difficult to make the film forming speed of vapor-deposited film stable, and may make membrane thickness unevenness because of the variation of film forming speed.
Putting down in writing in the patent documentation 1 (Japan internationality application open " special table 2003-502494 communique ") baffle plate (porous plate) is being set in the vapor deposition source container, making the evaporation or the stable summary of the invention of distillation amount of evaporation raw material thus.But said structure does not use the carrier gases of the raw material of supply evaporation or distillation, does not utilize flowing of carrier gases.Therefore, when using above-mentioned baffle plate, be supplied to the few and film forming speed of the material quantity of evaporation coating device and significantly reduce, so be not practical structure.
Summary of the invention
The object of the present invention is to provide a kind of new and practical evaporation coating device that addresses the above problem.
The invention provides a kind of feedstock supply unit that is used for evaporation coating device, it has good stability the film forming speed of evaporation coating device, and the evaporation coating device with this feedstock supply unit.
The invention provides a kind of feedstock supply unit, this feedstock supply unit is fed in the processing vessel of evaporation coating device with raw materials evaporate or distillation and with it, feedstock supply unit have the material container of preserving described raw material in inside, to the gas inflow entrance of the inside of described material container supply carrier gases and will with described carrier gases be evaporated or the described raw material supply that distils to the gas discharge outlet of described processing vessel, wherein, in the inside of described material container the air-flow control part is set, to be used to control flowing of described carrier gases.
The invention provides a kind of evaporation coating device, this evaporation coating device has at the processing vessel of the processed substrate of inner support with raw materials evaporate or distillation and with it and is fed to the feedstock supply unit of described processing vessel, the described raw material evaporation that described evaporation coating device will be evaporated or distil is to described processed substrate, described feedstock supply unit has the material container of preserving described raw material in inside, gas inflow entrance to the inside of described material container supply carrier gases, and will with described carrier gases be evaporated or the described raw material supply that distils to the gas discharge outlet of described processing vessel, wherein, in the inside of described material container the air-flow control part is set, to be used to control flowing of described carrier gases.
Can be provided for the feedstock supply unit of evaporation coating device according to the present invention, it has good stability the film forming speed of evaporation coating device, and has the evaporation coating device of this feedstock supply unit.
Description of drawings
Fig. 1 is the sectional view of the feedstock supply unit of embodiment 1.
Fig. 2 is the sectional view of the feedstock supply unit of embodiment 2.
Fig. 3 is the sectional view of the feedstock supply unit of embodiment 3.
Fig. 4 is the synoptic diagram of the evaporation coating device of embodiment 4.
Main nomenclature:
100 is feedstock supply unit, 101 is cylindrical vessel, 102 is cap, 103 is material container, 102A is the air-flow control part, 102a is the support portion, 102b, 102c, 102d is a jut, 103A is the internal space, 104 is gas inflow entrance, and 105 is the gas flow channel, and 106 is gas discharge outlet, 107 is the gas flow channel, 108 is the gas exhaust channel, and 109 is strainer, and 110 is the gas inflow pipe, 110A is a valve, 110B is a connection section, and 111 is gas outlet pipe, and 111A is a valve, 111B is a connection section, 112 are the sealing material, and 113 is well heater, and 200 is evaporation coating device, 201,202 is processing vessel, 203 is brace table, and 204 is processed substrate, and 205 is moving track, 206 is exhaust cap, 206A is a hole portion, and 207 is locating device, and 208 is exhaust unit, 208A is a vapor pipe, 209 are raw material supply portion, 209A, 209B, 209C, 209D is the raw material mixing section, and 210 are the raw material supply nozzle, 211 is gate valve, 212A, 212B, 212C, 212D is a flue, 213A, 213B, 213C, 214A, 214B, 214C, 215A, 215B, 216A, 216B is a valve, 217A, 217B, 217C is mass flow controller (MFC), 218 is the carrier gases source of supply, and 300 is automatic Handling device.
Preferred forms of the present invention
Embodiments of the present invention are described below with reference to the accompanying drawings.
[embodiment 1]
The feedstock supply unit of embodiment 1 at first, is described.This feedstock supply unit is that raw material is evaporated or distils and it is fed to the device of the processing vessel of evaporation coating device (description architecture example in the back).Evaporation coating device has the processing vessel that supports processed substrate, the raw material that the feedstock supply unit of present embodiment is evaporated or distils to this processing vessel supply.
Fig. 1 is the schematic cross-section of the feedstock supply unit of the embodiment of the invention 1.
As shown in Figure 1, the feedstock supply unit 100 of present embodiment constitutes material container 103 by cylindrical vessel 101 and cap 102, and the inside of this material container 103 is provided with internal space 103A.In described internal space 103A, deposit and be the raw material 100A of solid (for example, Powdered) state under the normal temperature and pressure.The outside of described material container 103 is provided with well heater 113, and described raw material 100A is evaporated or distillation by these well heater 113 heating.
Described cylindrical vessel 101 is substantially the drum of an end opening, and the open side of this drum forms the flange that described cap 102 is installed.Described cap 102 is installed in this cylindrical vessel 101, is used for blocking the peristome of described cylindrical vessel 101, inserts sealing material 112 between this cap 102 and this cylindrical vessel 101, to keep the resistance to air loss of described internal space 103A.
At described cap 102 the air-flow control part 102A that extends towards described internal space 103A is set, will be described hereinafter about the detailed content of this air-flow control part 102A.
Connect the gas inflow pipe 110 that carrier gases is flowed into described internal space 103A on the described cap 102.The carrier gases that flows into from described gas inflow pipe 110 flows into path 10 5 through gas inflow path 10 7 that is formed on described cap 102 and the gas that is formed on described cylindrical vessel 101, flow into described internal space 103A by gas inflow entrance 104.This gas inflow entrance 104 is formed on the opposition side (first side of described material container 103) that a side of described cap 102 is installed in the described cylindrical vessel 101.
Flow into the carrier gases of described internal space 103A by described gas inflow entrance 104, discharge by the gas discharge outlet 106 that is formed on described cap 102 (being positioned at second side of the opposition side of described first side) with the described raw material that is evaporated or distil (below be called gas raw material).
Carrier gases and gas raw material by described internal space 103A discharges are discharged to the gas outlet pipe 111 that is connected in described cap 102 by the gas exhaust channel 108 that is formed on described cap 102.Described gas outlet pipe 111 is connected in the processing vessel of evaporation coating device (will be described below), supplies carrier gases and gas raw material by this vent pipe 111 to this processing vessel.
The characteristics of the feedstock supply unit of present embodiment are, are formed for controlling the described air-flow control part of the mobile 102A of carrier gases in described internal space 103.Described raw material 100A is stored in the described material container 103, and opposed with described air-flow control part 102A.Flow in the space of carrier gases between described air-flow control part 102A and described raw material 100A.
Described air-flow control part 102A control is fed to the delivery air-flow of described internal space 103A, such as, the Reynolds number by making the delivery air-flow more than or equal to 1000, thereby make the delivery air-flow become sinuous flow.
Therefore, can promote evaporation or the distillation of described raw material 100A, make the evaporation of described raw material 100A or near the state that the described relief outlet 106 of described internal space 103A, reaches capacity that distils, promptly reach so-called saturation vapour pressure.
If be less than or equal to supply gas raw material under the state of saturation vapour pressure, then big change can take place according to the subtle change of various factors in the amount of evaporation or distillation, therefore may cause the problem that changes significantly to the film forming film forming speed of processed substrate.For example, the beginning evaporation is after after a while the time, be difficult to suppress fully the phenomenon that occurs along with problem such as the variation of various conditions or the material quantity variation of being placed, and these factors be can not ignore sometimes to the influence of film forming speed.
The feedstock supply unit of present embodiment because gas raw material is discharged with saturation vapour pressure, therefore can stably be fed to gas raw material in the processing vessel of evaporation coating device.
Described air-flow control part 102A extends to the direction of described gas discharge outlet 106 (from described first side to the second side) from described gas inflow entrance 104.That is, described air-flow control part 102A extends along the flow direction of carrier gases.Therefore, can control flowing of carrier gases effectively.
Described air-flow control part 102A comprises the tabular support portion 102a and a plurality of jut 102b by described first side to the second side that are formed on the 102a of this support portion that extends to second side from described first side.Control it from the carrier gases of described influx 104 inflows by described jut 102b and flow, and it is become sinuous flow by increasing Reynolds number.Therefore, described air-flow control part 102A preferably has enough length in order to control flowing of carrier gases.
Preferably be provided with strainer 109 in the described gas exhaust channel 108, disperse to handling vessel side to prevent pulverous described raw material 100A.
Be respectively equipped with valve 110A, 111A in described gas inflow pipe 110 and the described gas outlet pipe 111.And, be connected connection section 110B, the 111B that constitutes by pipe-fitting joint etc. respectively on described gas inflow pipe 110 and the described gas outlet pipe 111.Therefore, under the state of closing described valve 110A, 111A, untie the pipe-fitting joint of described connection section 110B, 111B, can be from the described feedstock supply unit 100 of evaporation coating device (processing vessel) dismounting.
As mentioned above, when keeping in repair, can easily this feedstock supply unit 100 be loaded and unloaded on evaporation coating device to described feedstock supply unit 100 additional raw materials or to described feedstock supply unit 100.
[embodiment 2]
The structure of air-flow control part is not limited to the structure shown in the embodiment 1, can carry out various distortion, change to it.
For example, Fig. 2 is the sectional view of the feedstock supply unit 100A of the embodiment of the invention 2.But, to the top identical symbol of part mark that has illustrated, and omit its explanation among the figure.And the part that does not offer some clarification on is identical with the structure of embodiment 1.
As shown in Figure 2, the jut 102c of present embodiment is than the jut 102b long (greatly) of embodiment 1, and leading section arrives described raw material 100A place.In the present embodiment, because carrier gases by described raw material 100A inside, therefore has the characteristics of the easier vapour pressure that reaches capacity.
[embodiment 3]
Fig. 3 is the schematic cross-section of the feedstock supply unit 100A of the embodiment of the invention 3.But, the identical symbol of part mark to having illustrated among the figure, and omit its explanation.And the part that does not offer some clarification on is identical with the structure of embodiment 1.
As shown in Figure 3, the cross-sectional shape of jut 102d is different with the cross-sectional shape of embodiment 1 in the present embodiment, and the cross-sectional shape of jut is a tetragon among the embodiment 1, and the cross-sectional shape of present embodiment is a trilateral, and leading section is sharp.As mentioned above, the shape of jut can be carried out various distortion, change according to the control condition (for example flow) of delivery air-flow or the difference (for example, the difference of vapour pressure) of raw material.
[embodiment 4]
Below, the configuration example of the evaporation coating device that uses above-mentioned raw materials feeding mechanism 100 is described with reference to Fig. 4.Fig. 4 is the mode chart of the evaporation coating device configuration example of the embodiment of the invention 4.
As shown in Figure 4, the evaporation coating device 200 of present embodiment comprises the processing vessel 202 that inside is provided with the processing vessel 201 of internal space 201A and is connected in this processing vessel 201.Be provided with the brace table 203 that supports processed substrate 204 among the described internal space 201A.Described brace table 203 has ESC (electrostatic adhesion dish), and supported 203 of described processed substrate is supported for the surface towards the direction that supplies raw material.Described brace table 203 is connected in moving track 205 movably, and can carry out parallel moving with respect to described processed substrate 204.
When described processed substrate 204 was moved into described processing vessel 201, the gate valve 211 that is arranged on this processing vessel 201 was opened, and moves into processed substrate 204 by the automatic Handling device 300 that is arranged on vacuum carrying chamber (not shown).After the processed substrate of moving into 204 positions by locating device 207, supported by described brace table 203.
Described internal space 201A forms decompression state by exhaust unit 208 exhausted airs that are made of turbomolecular pump that are connected in described processing vessel 201.Connect vapor pipe 208A on described exhaust unit 208, this vapor pipe 208A is connected in exhaust units such as dry vacuum pump (omission diagrammatic sketch).
Peristome in described processing vessel 201 bottom surfaces is provided with raw material supply portion 209 in the face of described brace table 203, and this raw material supply portion 209 is to described internal space 201A supply gas raw material.When described processed substrate 204 is carried out film forming (evaporation), reach processed substrate, carry out film forming thus by the gas raw material of described raw material supply portion 209 supplies.
Described processing vessel 202 is connected in the bottom surface of described processing vessel 201, is used to cover the described exhaust unit 208, described raw material supply portion 209 and the described locating device that are exposed at the outside, described processing vessel 201 bottom surfaces.
Described raw material supply portion 209 has the mixing section of a plurality of mixing multiple gases raw materials.Have along the be arranged in parallel structure of raw material mixing section 209A, 209B, 209C and 209D of the travel direction of described processed substrate 204 such as, described raw material supply portion 209.Be respectively equipped with raw material supply nozzle 210 among described raw material mixing section 209A, 209B, 209C and the 209D, carry out the blended gas raw material at each raw material mixing section and be fed to described internal space 201A, and carried out film forming to described processed substrate 204 by evaporation by this raw material supply nozzle 210.
Described raw material mixing section 209A, 209B, 209C and 209D connect each flue 212A, 212B, 212C and 212D, and the feedstock supply unit 100 that describes in this flue 209A, 209B, 209C and the 209D interface chart 1.
Illustrate described flue 212A, this flue 212A is connected in described mixing section 209A, and extends to the outside of described processing vessel 202, is connected with a plurality of described feedstock supply units 100 in the outside of this processing vessel 202.
Described flue 212A is connected to the described gas outlet pipe 111 of three described feedstock supply units 100 by valve 213A, 213B, 213C.That is, described raw material mixing section 209A is connected in three feedstock supply units by described flue 212A, and receives three kinds of gas raw materials and mix.At this raw material mixing section 209A blended gas raw material, be fed among the described internal space 201A by described gas supply nozzle 210.
Each gas inflow pipe 110 of described three feedstock supply units 100 is connected in carrier gases source of supply 218 by each valve 214A, 214B, 214C and MFC (mass flow controller) 217A, 217B, 217C, receives Ar carrier gaseses such as (argon gas) thus.Among Fig. 4, omitted the detailed structure (for example, internal structure) of the described feedstock supply unit 100 among Fig. 1.
Equally, described flue 212D is connected in described mixing section 209D, and extends to the outside of described processing vessel 202, is connected with a plurality of described feedstock supply units 100 in the outside of this processing vessel 202.
Described flue 212D is connected to the described gas outlet pipe 111 of two described feedstock supply units 100 by valve 215A, 215B.That is, described raw material mixing section 209D is connected in two feedstock supply units by described flue 212D, and the supply of accepting two kinds of gas raw materials mixes.At this raw material mixing section 209D blended gas raw material, be fed among the described internal space 201A by described gas supply nozzle 210.
Each gas inflow pipe 110 of described two feedstock supply units 100 is connected in described carrier gases source of supply 218 by each valve 216A, 216B, but this pipe connecting is not shown among Fig. 4.
Described flue 212B, 212C are also identical with above-mentioned gas pipe 212A, 212D, connect a plurality of feedstock supply units 100 (not shown), mix the multiple gases raw material in each described raw material mixing section 209B, 209C, and to described internal space 201A supply.
As mentioned above, because the evaporation coating device 200 of present embodiment uses the feedstock supply unit 100 of record among the embodiment 1, therefore having stably, the evaporation gas raw material carries out film forming and makes the stable characteristics of film forming speed.
Use above-mentioned film deposition system can form film with plurality of raw materials.When carrying out film forming, the stacked once more film that contains plurality of raw materials of described brace table 203 can be moved, baroque film forming can be carried out thus.Therefore, be applicable to luminous elements such as forming organic EL.
Such as, can use above-mentioned film deposition system 200 to form the organic EL of hole transporting layer, luminescent layer and electron supplying layer stacked.The material of main part of luminescent layer can use hydroxyquinoline aluminum (Alq3, Quinolinol Aluminum Complex), and dopant material can use lycid alkene (rubrene).
The purposes of described evaporation coating device is not limited to organic EL, can also form the vapor-deposited film of various uses in addition.
Above most preferred embodiment of the present invention is illustrated, but the present invention is not limited to above-mentioned certain embodiments, under the situation that does not break away from the technological thought of putting down in writing in the claim, can carries out various distortion, change.
[industrial application]
Evaporation coating device be can be provided for according to the present invention and feedstock supply unit that the film forming speed of evaporation coating device has good stability and evaporation coating device made with this feedstock supply unit.
The application of this world is with the Japanese patent application 2005-369898 number basis as the opinion right of priority of application on December 22nd, 2005, and the application quotes the full content of this Japanese publication.
Claims (16)
1. feedstock supply unit, this feedstock supply unit is fed in the processing vessel of evaporation coating device with raw materials evaporate or distillation and with it, and described feedstock supply unit is characterised in that to have:
Preserve the material container of described raw material in the bottom surface of internal space;
Gas inflow entrance to the internal space of described material container supply carrier gases; And
Will with described carrier gases be evaporated or the described raw material supply that distils to the gas discharge outlet of described processing vessel;
Wherein, the air-flow control part is set, is used to control flowing of described carrier gases in the internal space of described material container,
Described air-flow control part is configured to relative with the bottom surface of described internal space and maintains at interval,
In described internal space, described carrier gases flows between the bottom surface of described air-flow control part and described internal space.
2. feedstock supply unit according to claim 1 is characterized in that, described air-flow control part comprises the jut that is formed on described material container inside.
3. feedstock supply unit according to claim 2 is characterized in that, described jut is a plurality of.
4. feedstock supply unit according to claim 2 is characterized in that described raw material is placed in the described material container, and in the face of described jut.
5. feedstock supply unit according to claim 1 is characterized in that, described gas inflow entrance is formed on first side of described material container, and described gas discharge outlet is formed on second side of described material container, and this second side is the opposition side of described first side.
6. feedstock supply unit according to claim 5 is characterized in that, described air-flow control part is formed between described first side and described second side.
7. evaporation coating device, this evaporation coating device has at the processing vessel of the processed substrate of inner support with raw materials evaporate or distillation and with it and is fed to the feedstock supply unit of described processing vessel, the described raw material evaporation that this evaporation coating device will be evaporated or distil is to described processed substrate, described evaporation coating device is characterised in that described feedstock supply unit comprises:
Preserve the material container of described raw material in the bottom surface of internal space;
Gas inflow entrance to the internal space of described material container supply carrier gases; And
Will with described carrier gases be evaporated or the described raw material supply that distils to the gas discharge outlet of described processing vessel;
Wherein, the air-flow control part is set, is used to control flowing of described carrier gases in the internal space of described material container,
Described air-flow control part is configured to relative with the bottom surface of described internal space and maintains at interval,
In described internal space, described carrier gases flows between the bottom surface of described air-flow control part and described internal space.
8. evaporation coating device according to claim 7 is characterized in that, described air-flow control part comprises the jut that is formed on described material container inside.
9. evaporation coating device according to claim 8 is characterized in that, described jut is a plurality of.
10. evaporation coating device according to claim 8 is characterized in that described raw material is placed in the described material container, and in the face of described jut.
11. evaporation coating device according to claim 7 is characterized in that, described gas inflow entrance is formed on first side of described material container, and described gas discharge outlet is formed on second side of described material container, and this second side is the opposition side of described first side.
12. evaporation coating device according to claim 11 is characterized in that, described air-flow control part is formed between described first side and described second side.
13. evaporation coating device according to claim 7 is characterized in that, described feedstock supply unit is a plurality of.
14. evaporation coating device according to claim 13 is characterized in that, has mixing section, this mixing section mixes the raw material that is evaporated or distils by described a plurality of feedstock supply unit supplies.
15. evaporation coating device according to claim 14 is characterized in that, described mixing section is a plurality of.
16. evaporation coating device according to claim 7 is characterized in that, described feedstock supply unit is arranged on the outside of described processing vessel, and is removable at this processing vessel.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP369898/2005 | 2005-12-22 | ||
| JP2005369898A JP2007169728A (en) | 2005-12-22 | 2005-12-22 | Raw material feeder, and vapor deposition apparatus |
| PCT/JP2006/325392 WO2007072867A1 (en) | 2005-12-22 | 2006-12-20 | Feedstock supply unit and vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101278073A CN101278073A (en) | 2008-10-01 |
| CN101278073B true CN101278073B (en) | 2011-12-14 |
Family
ID=38188643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006800365146A Expired - Fee Related CN101278073B (en) | 2005-12-22 | 2006-12-20 | Feedstock supply unit and vapor deposition equipment |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2007169728A (en) |
| KR (1) | KR100981474B1 (en) |
| CN (1) | CN101278073B (en) |
| TW (1) | TW200738895A (en) |
| WO (1) | WO2007072867A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5527933B2 (en) * | 2007-11-30 | 2014-06-25 | 東京エレクトロン株式会社 | Film forming apparatus control method, film forming method, film forming apparatus, organic EL electronic device, and storage medium storing control program thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883362A (en) * | 1987-01-31 | 1989-11-28 | U.S. Philips Corp. | Device for enriching a carrier gas with the vapor of a sparingly volatile substance |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232048A (en) * | 1993-01-29 | 1994-08-19 | Matsushita Electric Ind Co Ltd | Device for vaporizing and supplying organometallic compound |
| JP3909792B2 (en) * | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | Raw material supply apparatus and raw material supply method in chemical vapor deposition |
-
2005
- 2005-12-22 JP JP2005369898A patent/JP2007169728A/en active Pending
-
2006
- 2006-12-20 KR KR1020087007720A patent/KR100981474B1/en not_active IP Right Cessation
- 2006-12-20 WO PCT/JP2006/325392 patent/WO2007072867A1/en active Application Filing
- 2006-12-20 CN CN2006800365146A patent/CN101278073B/en not_active Expired - Fee Related
- 2006-12-22 TW TW095148483A patent/TW200738895A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883362A (en) * | 1987-01-31 | 1989-11-28 | U.S. Philips Corp. | Device for enriching a carrier gas with the vapor of a sparingly volatile substance |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007169728A (en) | 2007-07-05 |
| WO2007072867A1 (en) | 2007-06-28 |
| CN101278073A (en) | 2008-10-01 |
| KR20080045253A (en) | 2008-05-22 |
| TW200738895A (en) | 2007-10-16 |
| KR100981474B1 (en) | 2010-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4911555B2 (en) | Film forming apparatus and film forming method | |
| JP4599727B2 (en) | Vapor deposition equipment | |
| KR101238793B1 (en) | Deposition source unit, deposition apparatus and temperature control apparatus for deposition source unit | |
| US20100068375A1 (en) | Evaporating apparatus and method for operating the same | |
| US20100043710A1 (en) | Inner plate and crucible assembly for deposition having the same | |
| US20100071623A1 (en) | Evaporating apparatus | |
| US20130081700A1 (en) | Source gas supply unit, and deposition apparatus and method using the same | |
| JP4602054B2 (en) | Vapor deposition equipment | |
| KR20170026532A (en) | Device and method for generating vapor for a cvd- or pvd device | |
| KR101871717B1 (en) | Chemical delivery system | |
| JP5091678B2 (en) | Deposition material estimation method, analysis method, and film formation method | |
| CN101278073B (en) | Feedstock supply unit and vapor deposition equipment | |
| US20100259162A1 (en) | Film forming device control method, film forming method, film forming device, organic el electronic device, and recording medium storing its control program | |
| JP6321785B2 (en) | Apparatus and method for applying a material to a substrate | |
| JP6276007B2 (en) | Vapor deposition apparatus, film forming method, and manufacturing method of organic EL apparatus | |
| JP2003155555A (en) | Multiple molecular beam source cell for thin film deposition | |
| KR20040009579A (en) | Method for organic material deposition and the apparatus adopting the same | |
| US20050241585A1 (en) | System for vaporizing materials onto a substrate surface | |
| JP6549835B2 (en) | Vapor deposition apparatus, and method of manufacturing organic EL apparatus | |
| JP6282852B2 (en) | Vapor deposition apparatus, film forming method, and manufacturing method of organic EL apparatus | |
| WO2003104520A1 (en) | Method for forming organic thin film | |
| US20230128048A1 (en) | Canister of semiconductor product device | |
| KR20080079924A (en) | Source supply device of substrate manufacturing apparatus | |
| KR200379129Y1 (en) | apparatus for depositing organic thin film | |
| JP2004217968A (en) | Gas carrier system, film deposition system, and device of producing organic el element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111214 Termination date: 20161220 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |