WO2007041902A1 - Structure de conduction et de dissipation thermique pour un boitier a diodes electroluminescentes de lumiere blanche - Google Patents
Structure de conduction et de dissipation thermique pour un boitier a diodes electroluminescentes de lumiere blanche Download PDFInfo
- Publication number
- WO2007041902A1 WO2007041902A1 PCT/CN2005/001802 CN2005001802W WO2007041902A1 WO 2007041902 A1 WO2007041902 A1 WO 2007041902A1 CN 2005001802 W CN2005001802 W CN 2005001802W WO 2007041902 A1 WO2007041902 A1 WO 2007041902A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- led package
- heat dissipation
- phosphor
- layer
- dissipation structure
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- 239000012790 adhesive layer Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 230000017525 heat dissipation Effects 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 7
- ZKQDCIXGCQPQNV-UHFFFAOYSA-N Calcium hypochlorite Chemical compound [Ca+2].Cl[O-].Cl[O-] ZKQDCIXGCQPQNV-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007844 bleaching agent Substances 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 abstract description 6
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Definitions
- the present invention relates to an LED package structure, and in particular to a white light LED package heat conduction structure.
- LED As a kind of illuminating light source, LED has many advantages such as low energy consumption, low heat generation and long service life, and has been widely used in lighting and decorative lighting. Among them, the emergence of white LEDs has enabled the field of high-brightness LED applications to reach the market of high-efficiency lighting sources.
- the existing white LEDs use the blue illuminating crystal and the phosphor to cooperate with the lens principle to emit the white light required by the naked eye.
- the current white LED luminaires mostly use the structure of the white LED array to provide the overall illuminance of the luminaire. Therefore, although the calorific value of a single white LED is low, a large number of white LED devices are relatively sealed and have limited space. In the inner cavity, the heat generated during the operation is still accumulated due to difficulty in effectively dispersing, and inevitably, the heat generation of the entire lamp is large.
- the phosphor on the white LED illuminator burns out, which affects the use effect and life of the luminaire.
- the white LEDs currently produced and packaged on the market have a very short life span, and generally have a problem of attenuation or discoloration at 600 to 800 hours. At present, there is no effective way to solve the problem of heat conduction of white LEDs.
- the object of the present invention is to provide a light-emitting structure of a white LED package with a simple structure, which can effectively solve the problem of heat conduction caused by the operation of the LED white light diode.
- the white LED package guiding heat dissipation structure comprises two metal lead frames, wherein an upper end of a lead frame is a bracket cup, and a blue light emitting crystal and a phosphor are arranged in the cup.
- the glue layer and the blue light-emitting crystal lead two wires to be respectively connected with the two lead frames, and the upper end portions of the two lead frames enclose the colorless transparent resin; the upper and lower portions of the blue light-emitting crystal are respectively provided with a conductive heat-dissipating layer, two guides
- the heat-dissipating adhesive layer encloses the blue light-emitting crystal, and the phosphor glue layer is disposed on the upper conductive heat-dissipating layer.
- the conductive heat-dissipating adhesive layer is made by mixing and stirring rubber silica gel and resin, and the weight ratio of the rubber silica gel to the resin is 1:
- the phosphor layer is made of resin and fluorescent. Mixing powder, yellow toner and bleaching powder, the weight ratio of resin, phosphor, yellow toner and bleaching powder is
- the thickness of the above-mentioned heat conductive adhesive layer is between 0.001 mm and 3 mm.
- the phosphor layer has a thickness of between 0.001 mm and 5 mm.
- the heat generated by the white LED during operation can be quickly dissipated to the lead frame via the two conductive heat-dissipating layers, and then dissipated through the foot of the lead frame to make the working temperature of the white LED.
- the control is below 65 °C, and the service life of the phosphor is more than 40,000 hours, which effectively solves the problem of the phosphor life of the white LED.
- Figure 1 is a schematic view of the structure of the present invention
- Figure 2 is an exploded view of the structure of the present invention.
- the white LED package heat conduction structure of the present invention has two metal lead frames 1 , wherein the upper end of one lead frame is a bracket cup 1], and the cup is provided with blue.
- the illuminating crystal 2 and the phosphor layer 3, the blue illuminating crystal 2 leads the two wires 21 respectively connected to the two lead frame 1; the upper and lower portions of the blue illuminating crystal are respectively provided with a guiding heat dissipating layer 5, and two guiding heat dissipating layers 5
- the blue luminescent crystal 2 is encapsulated, and the phosphor layer 3 is disposed on the upper conductive layer.
- the upper end of the two-lead frame encloses the colorless transparent resin 4.
- the packaging process step of the invention is: firstly injecting a layer of heat-dissipating glue on the bottom of the cup of the bracket cup, then fixing a blue light-emitting crystal on the layer of the heat-dissipating glue, soldering the wire, and injecting the light on the blue light-emitting crystal
- the second layer of heat-dissipating glue is applied to the second layer of the heat-dissipating glue, and the epoxy resin layer is filled with the epoxy resin layer.
- the above-mentioned conductive heat-dissipating glue is made by mixing and stirring rubber silica gel and resin. According to different requirements, the weight ratio of rubber silica gel to resin is 1: 0.001-1 0
- the above phosphor powder layer is prepared by mixing resin, phosphor, yellow toner and bleaching powder. According to different requirements, the weight ratio of resin, phosphor, yellow toner and bleaching powder is 1: 0.001-1: 0.001-1: 0.001-1
- the thickness of the above-mentioned heat conductive adhesive layer is between 0.001 mm and 3 mm. '
- the phosphor powder layer has a thickness of between 0.001 mm and 5 mm.
- the heat emitted by the blue light-emitting crystal is conducted to the bracket cup and the lead frame via the two conductive heat-dissipating layers, and then is dissipated through the legs of the lead frame, so that the heat of the white LED is generally emitted. It can be quickly and effectively dissipated, ensuring that the phosphor layer will not burn out and discolor, ensuring that the white LED's phosphor powder has a lifetime of more than 40,000 hours.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Description
白光 LED封装导散热结构
本发明所属技术领域
本发明涉及 LED封装结构, 具体涉及一种白光 LED封装导散热结构。
在本发明之前的现有技术
LED作为一种发光光源, 具有能耗低、 发热量较低、 使用寿命长等诸多优点, 已经 越来越广泛地应用于照明和装饰灯具中。 其中, 白光 LED的出现, 更使高亮度 LED应 用领域跨足至高效率照明光源市场。
现有的白光 LED是采用蓝色发光晶体和荧光粉两者配合再利用透镜原理来发出肉眼 所需的白光的。 但是, 目前的白光 LED灯具多采用白光 LED阵列的结构形式来提供灯 具的总体发光亮度, 因此单个白光 LED的发热量虽然较低, 但数量较多的白光 LED装 置在相对密封且空间有限的灯具内腔里, 其工作时产生的热量仍因难以有效导散而形成 积聚, 进而不可避免地出现灯具整体发热量较大的问题。 按照目前的白光 LED封装技 术, 其工作温度一旦超过 65 °C, 则会造成白光 LED发光体上的荧光粉烧废, 进而影响到 灯具的使用效果和寿命。 还有, 由于现有的荧光粉调配技术原因, 目前市面上生产封装 的白光 LED寿命非常短, 一般在 600~800小时就出现衰减或变色问题。 目前, 尚没有行 之有效的方法来解决白光 LED的导散热问题。
发明目的
本发明的目的在于针对上述问题, 提供一种结构简单的白光 LED封装导散热结构, 其 可有效解决 LED白光二极管工作时产生热量的导散热问题。
本发明釆用的技术方案
为达到上述目的, 本发明的技术方案如下: 白光 LED封装导散热结构, 包括两个 金属引脚架, 其中一引脚架的上端部为支架杯, 杯内设有蓝色发光晶体及荧光粉胶层, 蓝色发光晶体引出两导线分别与两引脚架连接, 两引脚架的上端部包封无色透明树脂; 蓝色发光晶体的上、 下面分别设有一导散热胶层, 两导散热胶层将蓝色发光晶体包封, 及荧光粉胶层设在上导散热胶层的上面。
上述导散热胶层由橡硅胶及树脂混合搅拌而成, 橡硅胶与树脂的重量配比为 1 : 为进一步延长荧光粉的衰减周期和改善其变色问题, 上述荧光粉胶层由树脂、 荧光
粉、 黄色色粉、 漂白粉混合搅拌而成, 树脂、 荧光粉、 黄色色粉和漂白粉的重量配比为
1: 0.001-1: 0.001-1: 0.001-1
上述导散热胶层的厚度在 0.001毫米〜 3毫米之间。
上述荧光粉胶层的厚度在 0.001毫米〜 5亳米之间。
本发明通过采用上述结构, 白光 LED工作时发出的热量得以经两个导散热胶层迅 速地导散至引脚架上, 再经由引脚架的脚部导散出去, 使白光 LED的工作温度控制在 65 °C以下, 进而使荧光粉的使用寿命达到 40000小时以上, 有效解决了白光 LED的荧光粉 使用寿命问题。
附图说明
图 1是本发明的结构示意图;
图 2是本发明的结构分解图。
现结合附图和实施例对本发明作进一步说明:
实施例
如图 1、 图 2所示, 本发明所述的白光 LED封装导散热结构, 有两个金属引脚架 1 , 其中一引脚架的上端部为支架杯 1】, 杯内设有蓝色发光晶体 2及荧光粉胶层 3, 蓝色 发光晶体 2引出两导线 21分别与两引脚架 1连接; 蓝色发光晶体的上、 下面分别设有一 导散热胶层 5, 两导散热胶层 5将蓝色发光晶体 2包封, '及荧光粉胶层 3设在上导散热胶 层的上面。 两引脚架的上端部包封无色透明树脂 4。
本发明的封装工艺步骤为: 首先在支架杯的杯底注入一层导散热胶, 然后在该层导 散热胶上面固上蓝色发光晶体, 焊上导线, 再在蓝色发光晶体上面注入第二层导散热 胶, 第二层导散热胶上面注入调配好的莹光粉胶层后整体封上环氧树脂。
上述导散热胶是由橡硅胶和树脂混合搅拌而成, 根据不同的要求, 橡硅胶与树脂的 重量配比为 1 : 0.001-10
上述荧光粉胶层的调配是由树脂、 荧光粉、 黄色色粉、 漂白粉混合搅拌而成, 根据 不同的要求, 树脂、 荧光粉、 黄色色粉、 漂白粉的重量配比为 1 : 0.001-1: 0.001-1: 0.001-1
上述导散热胶层的厚度在 0.001亳米 ~3毫米之间。 '
上述荧光粉粉胶层的厚度在 0.001毫米〜 5毫米之间。
本发明工作时, 蓝色发光晶体发出的热量经由两个导散热胶层导散到支架杯和引脚 架上, 再经引脚架的脚部导散出去, 因此, 白光 LED整体发出的热量得以迅速有效地导 散出去, 保证了荧光粉胶层不会烧废和变色, 确保了白光 LED的莹光粉寿命达 40000小 时以上。
Claims
1、 白光 LED封装导散热结构, 包括两个金属引脚架, 其中一引脚架的上端部为支 架杯, 杯内设有蓝色发光晶体及荧光粉胶层, 蓝色发光晶体引出两导线分别与两引脚架 连接, 两引脚架的上端部包封无色透明树脂, 其特征是: 蓝色发光晶体的上、 下面分别 设有一导散热胶层, 两导散热胶层将蓝色发光晶体包封, 及荧光粉胶层设在上导散热胶 层的上面。
2、 根据权利要求 1所述的白光 LED封装导散热结构, 其特征是: 所述导散热胶层 由橡硅胶及树脂混合搅拌而成。
3、 根据权利要求 2所述的白光 LED封装导散热结构, 其特征是: 所述橡硅胶与树 脂的重量配比为 1 : 0.001-1
4、 根据权利要求 1所述的白光 LED封装导散热结构, 其特征是: 所述荧光粉胶层 由树脂、 荧光粉、 黄色色粉、 漂白粉混合搅拌而成。
5、 根据权利要求 4所述的白光 LED封装导散热结构, 其特征是: 所述树脂、 荧光 粉、 黄色色粉和漂白粉的重量配比为 1 : 0.001-1: 0.001-1: 0.001-1
6、 根据权利要求 1所述的白光 LED封装导散热结构, 其特征是: 所述导散热胶层 的厚度在 0.001毫米〜 3毫米之间。
7、 根据权利要求 1所述的白光 LED封装导散热结构, 其特征是: 所述荧光粉胶层 的厚度在 0.001毫米〜 5毫米之间。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN200510100253.7 | 2005-10-12 | ||
CNB2005101002537A CN100414728C (zh) | 2005-10-12 | 2005-10-12 | 白光led封装导散热结构 |
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WO2007041902A1 true WO2007041902A1 (fr) | 2007-04-19 |
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PCT/CN2005/001802 WO2007041902A1 (fr) | 2005-10-12 | 2005-10-31 | Structure de conduction et de dissipation thermique pour un boitier a diodes electroluminescentes de lumiere blanche |
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WO (1) | WO2007041902A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102157668A (zh) * | 2011-04-01 | 2011-08-17 | 饶曼夫 | 发光二极管的荧光粉封装结构及其封装方法 |
CN104681698A (zh) * | 2015-01-06 | 2015-06-03 | 司红康 | 一种装饰用led封装结构 |
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CN105023988B (zh) * | 2014-04-25 | 2018-03-13 | 日月光半导体制造股份有限公司 | 发光半导体封装及相关方法 |
CN108071962A (zh) * | 2017-06-13 | 2018-05-25 | 马文波 | 一种加强led灯条散热的方法 |
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CN2590181Y (zh) * | 2002-09-10 | 2003-12-03 | 山西至诚科技有限公司 | 大功率白光二极管 |
KR20040092512A (ko) * | 2003-04-24 | 2004-11-04 | (주)그래픽테크노재팬 | 방열 기능을 갖는 반사판이 구비된 반도체 발광장치 |
CN1652361A (zh) * | 2004-02-05 | 2005-08-10 | 李坤锥 | 白光发光装置 |
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2005
- 2005-10-12 CN CNB2005101002537A patent/CN100414728C/zh not_active Expired - Fee Related
- 2005-10-31 WO PCT/CN2005/001802 patent/WO2007041902A1/zh active Application Filing
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US20020093287A1 (en) * | 2001-01-17 | 2002-07-18 | Hsing Chen | White light LED |
JP2004303854A (ja) * | 2003-03-31 | 2004-10-28 | Denso Corp | 半導体装置 |
US6921927B2 (en) * | 2003-08-28 | 2005-07-26 | Agilent Technologies, Inc. | System and method for enhanced LED thermal conductivity |
CN1564330A (zh) * | 2004-03-16 | 2005-01-12 | 南亚塑胶工业股份有限公司 | 高散热led发光组件及其制造方法 |
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CN102157668A (zh) * | 2011-04-01 | 2011-08-17 | 饶曼夫 | 发光二极管的荧光粉封装结构及其封装方法 |
CN104681698A (zh) * | 2015-01-06 | 2015-06-03 | 司红康 | 一种装饰用led封装结构 |
CN104681698B (zh) * | 2015-01-06 | 2017-12-19 | 安徽康力节能电器科技有限公司 | 一种装饰用led封装结构 |
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