WO2006134880A1 - Multilayer film, method for producing same, method for selecting supporting body for multilayer film, and method for evaluating supporting body for multilayer film - Google Patents

Multilayer film, method for producing same, method for selecting supporting body for multilayer film, and method for evaluating supporting body for multilayer film Download PDF

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Publication number
WO2006134880A1
WO2006134880A1 PCT/JP2006/311766 JP2006311766W WO2006134880A1 WO 2006134880 A1 WO2006134880 A1 WO 2006134880A1 JP 2006311766 W JP2006311766 W JP 2006311766W WO 2006134880 A1 WO2006134880 A1 WO 2006134880A1
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WO
WIPO (PCT)
Prior art keywords
support
film
circuit
adhesive
laminated film
Prior art date
Application number
PCT/JP2006/311766
Other languages
French (fr)
Japanese (ja)
Inventor
Gentaro Seki
Kazuya Satou
Xiaoli Du
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Priority to JP2007521280A priority Critical patent/JPWO2006134880A1/en
Publication of WO2006134880A1 publication Critical patent/WO2006134880A1/en

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N19/00Investigating materials by mechanical methods
    • G01N19/04Measuring adhesive force between materials, e.g. of sealing tape, of coating
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]

Definitions

  • Laminated film and production method thereof method for selecting laminated film support, and evaluation method for laminated film support
  • the present invention relates to a laminated film and a method for producing the same, a method for selecting a laminated film support, and a method for evaluating a laminated film support.
  • connection between a liquid crystal display and TCP Tape Carrier Package
  • connection between an FPC (Flexible Printed Circuit) and TCP or connection between an FPC and a printed wiring board
  • conductive particles are dispersed in an adhesive.
  • An anisotropic conductive adhesive is used. This is intended to make the circuit connection more reliable.
  • flip chip mounting is performed in which the semiconductor silicon chip is directly mounted on the substrate face down instead of the conventional wire bond. Even in this case, the application of anisotropic conductive adhesive has started! Speak.
  • the adhesive film before use usually comprises a support on at least one side of the main surface to constitute a laminated film.
  • the support is coated with a release treatment agent so that the adhesive film provided on the surface can be easily removed.
  • this release treatment agent makes it easy to peel off the adherend from the support, a part of the release treatment agent component and the low molecular weight component contained in the release treatment agent component are intentionally transferred to the adherend side. It is designed to be Thereby, the light peeling of the adherend from the support is realized, but due to this, a part of the peeling treatment agent is transferred to the surface of the adhesive film.
  • a release treatment agent made of silicone resin is widely known.
  • the release treatment agent moves particularly easily to the adhesive film side (see, for example, Patent Documents 1 and 2). Therefore, as described in Patent Document 3, it is conceivable to adopt a support (release film) that does not contain silicone resin.
  • Patent Document 1 JP 2001-123130 A
  • Patent Document 2 Japanese Patent Laid-Open No. 2002-331614
  • Patent Document 3 Japanese Patent Laid-Open No. 2001-171033
  • Light release is realized by transferring a part of the release treatment component and a low molecular weight component contained in the release treatment component. Therefore, even when using such a support
  • the present invention is a laminated film obtained by laminating an adhesive film on the surface of a support, the laminated film having sufficient connection reliability, and a method for producing the same, and a laminated film support It is an object of the present invention to provide a body sorting method and a method for evaluating a laminated film support.
  • the present invention provides a laminated film in which an adhesive film containing an adhesive composition is formed on the surface of a support, and the support is formed on the surface thereof.
  • a laminated film having a residual adhesion ratio C of 80% or more is provided.
  • residual adhesion rate C on the surface of the support is a numerical value derived as follows.
  • peel strength A and above the peel strength between an adhesive tape (31B tape), which is a standard sample, and a predetermined metal plate is measured, and this is used as the reference peel strength A.
  • the adhesive tape is affixed to the substrate to be measured and peeled off, and the procedure for measuring the peel strength with a predetermined metal plate is repeated 5 times. Peel strength A and above
  • Patent Document 2 also describes the term “residual adhesion rate”.
  • the “residual adhesion rate” described in Patent Document 2 can be measured using the residual adhesion rate C defined in the present invention.
  • Patent Document 2 also differs from the present invention in that the peel strength to be measured is the first time. This has an important meaning as will be described later. This will be described in more detail with reference to FIGS.
  • a support 8 constituting a laminated film, a 25 mm wide acrylic foam double-sided adhesive tape 4, a glass plate 3, a 10 mm wide 31B tape 2 (manufactured by Nitto Denko), and a stainless steel (SUS) Prepare board 1.
  • the surface of the glass plate 3 is washed using various solvents such as toluene, acetone, methanol, etc., and organic components and inorganic components adhering to the surface are removed.
  • an acrylic foam double-sided adhesive tape 4 cut out to a length of 60 mm is attached to the surface of the glass plate 3 after washing using a rubber roll having a mass of 2 kg.
  • the release substrate of the acrylic foam double-sided adhesive tape 4 is peeled to expose the adhesive surface. Further, a support 8 cut out in a rectangular film shape of 20 mm ⁇ 55 mm is arranged on the center portion of the adhesive surface of the acrylic foam double-sided adhesive tape 4 so that the entire main surface of one side is placed.
  • 31B tape 2 newly cut to a length of 70 mm was attached to the surface of the support 8 using a rubber roll with a mass of 2 kg so that no scissors would enter, and FIG. It is configured as shown in the schematic front view of (a) and the schematic plan view of FIG.
  • the 31B tape 2 affixed to the surface of the support 8 is peeled 180 ° by a tensile tester at a pulling speed of 50 mmZmin as shown in the schematic front view of FIG. 1 (b). In this way, the 31B tape 6 is obtained.
  • the 31B tape 2 to be affixed to the surface of the support 8 is newly cut each time.
  • 31B tape 2 and stainless steel plate 1 are prepared. Furthermore, the surface of the stainless steel plate 1 is cleaned using various solvents such as toluene, acetone, methanol, etc., and organic components and inorganic components adhering to the surface are removed. Next, 31B tape 2 cut out to a length of 70 mm was affixed to the surface of the washed stainless steel plate 1 using a rubber roll with a mass of 2 kg so that no scissors could enter. It is configured as shown in the schematic front view.
  • the residual adhesion rate C is a numerical value obtained after repeating the operation [3] five times.
  • the peel strength may be measured by performing the operations [5] and [6] each time the operation [3] is performed once. In this case, if the peel strength obtained by the operation of [6] is B after the operation of [3] is repeated n times, the corresponding residual adhesion rate C is expressed by the following formula (2).
  • a support having a residual adhesion ratio C of 80% or more as defined in the present invention is a transfer of a release treatment agent.
  • connection reliability of the adhesive film can be sufficiently enhanced because the transfer of foreign matter to the adhesive film is suppressed.
  • the adhesive composition according to the present invention preferably contains conductive particles.
  • the circuit members can be more stably electrically connected while maintaining the insulation state between the circuit electrodes on the same substrate.
  • the present invention is a method for selecting a support for a laminated film, in which the support is selected from a laminate film in which an adhesive film containing an adhesive composition is formed on the surface of the support.
  • the support force is also peeled off to connect the circuit electrodes.
  • the adhesive film sandwiched between the electrodes can sufficiently maintain the connection reliability between the circuit electrodes.
  • the present invention includes a step of selecting a support having a surface residual adhesion ratio C of 80% or more, and a selection process.
  • the present invention also includes a step of forming a support so that the residual adhesion ratio C of the surface is 80% or more, and the support
  • the present invention measures the peel strength between an adhesive tape, which is a standard sample, and a predetermined metal plate.
  • a method for evaluating a support is provided.
  • a laminated film obtained by laminating an adhesive film on the surface of a support, wherein the adhesive film has sufficient connection reliability.
  • FIG. 1 is a process front view for explaining peel strength B.
  • FIG. 2 is a schematic plan view for explaining peel strength B.
  • FIG. 3 is a process front view for explaining peel strength A.
  • FIG. 4 is a schematic sectional view showing an embodiment of a circuit member connection structure according to the present invention.
  • FIG. 5 is a series of process diagrams for connecting circuit members according to the present invention.
  • FIG. 6 is a schematic cross-sectional view showing an embodiment of a semiconductor device according to the present invention.
  • (meth) acrylic acid means “acrylic acid” and its corresponding “methacrylic acid”
  • (meth) acrylate means “atallylate” and its corresponding “
  • Methodacrylate means “(meth) atalyloxy group” means “atallyloxy group” and the corresponding “methacryloxy group”.
  • a laminated film according to a preferred embodiment of the present invention is a laminated film in which an adhesive film containing an adhesive composition is formed on the surface of a support, and the support is a surface.
  • the residual adhesion C force is 3 ⁇ 40% or more.
  • the support is not particularly limited as long as the residual adhesion C on the surface thereof is 80% or more.
  • the support include, for example, a polyethylene terephthalate film, a polyethylene naphthalate film, a polyethylene isophthalate film, a polybutylene terephthalate film, a polyolefin-based film, a polyacetate film, a polycarbonate film, and a polyphenylene sulfide film.
  • a polyethylene terephthalate film a polyethylene naphthalate film
  • a polyethylene isophthalate film a polybutylene terephthalate film
  • a polyolefin-based film a polyacetate film, a polycarbonate film, and a polyphenylene sulfide film.
  • the film surface may be subjected to corona discharge treatment, anchor coating treatment, antistatic treatment or the
  • the support has a residual adhesion C of 80% or more and at the same time is formed on the surface thereof.
  • the surface of the adhesive film may be coated with a release treatment so that the adhesive film can be easily removed.
  • the release treatment agent include silicone resin, copolymer of silicone and organic resin, alkyd resin, amino alkyd resin, resin having a long-chain alkyl group, and resin having a fluoroalkyl group. Fat and shellac rosin are listed. Among these, from the viewpoint of more effectively preventing the release treatment agent from transferring from the support to the adhesive film, release treatment agents other than the release treatment agent mainly composed of silicone resin are preferred.
  • the thickness of the support is not particularly limited. However, storage and use of laminated film Considering the convenience of time, the thickness of the support is preferably 4 to 200 / ⁇ ⁇ . Furthermore, considering the material cost and productivity of the laminated film, the thickness of the support is more preferably 15 to 75 m.
  • the support is preferably evaluated by the above-described method for evaluating a laminated film support according to the present invention and selected by the method for selecting a laminated film support according to the present invention.
  • the method of selecting a support for example, multiple types of supports with different materials and manufacturing methods are prepared, and only those whose surface residual adhesion ratio C is 80% or more are prepared.
  • connection reliability of the adhesive film is improved, and the circuit connection structure formed using the adhesive film and the yield of the semiconductor device are sufficiently increased.
  • the support surface has a low content.
  • Examples include a method in which a low molecular weight component is not present as much as possible, a high molecular weight component is preferentially present, and control is performed so that a part of the molecule of the releasable treatment agent component does not easily fall off.
  • Examples of the high molecular weight component include amino alkyd resin.
  • the adhesive film may be, for example, one obtained by forming an adhesive composition into a film.
  • the adhesive composition preferably cures a polymerizable compound such as a polymerizable resin component for maintaining a connection state between electronic materials such as circuit electrodes, and the polymerizable compound.
  • U which preferably includes a polymerization initiator that is a curing agent for the purpose, and a film-forming component for imparting film-forming properties to the adhesive composition.
  • the polymerizable compound is a thermosetting compound that can be cured in a temperature range that is set according to the environment when the laminated film is used, or a light irradiation that is used depending on the environment when the laminated film is used. It may be a curable compound such as a photocurable compound that can be cured by the above method. As the curable compound, a radical polymerizable compound that is advantageous for low-temperature rapid curing is preferable.
  • the radical polymerizable compound is a compound having a functional group that is polymerized by radicals.
  • the radically polymerizable compound examples include (meth) atalytoi compound, maleimide compound, citraconimid compound, and nadiimide compound. These are one kind alone or Used in combination of two or more.
  • the radical polymerizable compound can be used in either a monomer or oligomer state, and the monomer and oligomer may be mixed and used.
  • Examples of (meth) ataretoy compounds include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, isobutyl (meth) acrylate, and heterangel recall (meth).
  • Atalylate diethylene glycol di (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylene glycol tetra (meth) acrylate, 2 —hydroxy mono 1,3 di (meth) talyloxy propane, 2, 2 bis [4 — (((Meth) Ataryloxymethoxy) phenol] propane, 2, 2 bis [4— (((Meth) Atalyloxyethoxy) phenol] propane, dicyclopentayl (meth) acrylate tricyclodehydryl ( (Meta) Atalylate, Tris ((Meth) Atari Mouth Kichetil) Isocyanurate, Urethane (Meta ) Atarylate, isocyanuric acid ethylene oxide-modified di (meth) acrylate. These may be used alone or in combination of two or more.
  • a (meth) acrylic resin can be obtained by radical polymerization of the above (meth) attale toy compound.
  • a maleimide compound is a compound having at least one maleimide group in the molecule.
  • maleimide compounds include: phenol maleimide, 1-methyl-2,4 bismaleimide benzene, N, N, 1m-phenol bismaleimide, N, N, 1p phenolene bismaleimide, N, N, -4 , 4-bi-bilenene bismaleimide, N, N, —4, 4— (3, 3-dimethylbiphenylene) bismaleimide, N, N, 1, 4, 4- (3, 3-dimethyldiphenylmethane) bis Maleimide, N, N, 1,4,4- (3,3-Jetyldiphenylmethane) bismaleimide, N, N, —4,4-diphenylmethane bismaleimide, N, N, 1,4,4-diphenylpropane Bismaleimide, N, N, 1,4,4-diphenyl ether bismaleimide, N, N, 1,4,4-diphenyl ether
  • a citraconimide compound is a compound having at least one citraconimide group in the molecule.
  • Citraconimide compounds include, for example, phenol citraconimide, 1-methyl-2,4 biscitraconimide benzene, N, N, 1 m-phenylene biscitraconimide, N, N, 1p -Lenbiscitraconimide, N, N, 1,4,4-biphenylene biscitraconimide, N, N, 4,4— (3,3-dimethylbiphenyl) biscitraconimide, N, N, —4,4 — (3,3-Dimethyldiphenylmethane) biscitraconimide, N, N, 4,4— (3,3-Detyldiphenylmethane) biscitraconeimide, N, ⁇ '— 4, 4-Diphenylmethane biscitracon Imido,
  • a nadiimide compound is a compound having at least one nadiimide group in the molecule.
  • Nadiimide compounds include, for example, ferronadiimide, 1-methyl 2,4 bisnadiimidebenzene, ⁇ , N, 1m-phenolene bisnadiimide, N, N, 1p phenylenediamine imide, N, N , —4, 4-Bi-phenylene bisnadiimide, N, N, —4, 4— (3, 3-dimethylbiphenylene) bisnadiimide, N, N, 1, 4, 4— (3, 3-dimethyldiphenylmethane) ) Bisnadiimide, N, N, —4, 4— (3, 3—Jetyldiphenylmethane) Bisnadiimide, N, N, 1,4,4-Diphenylmethane bisnadiimide, N, N, 1,4,4—Diphen
  • the polymerization initiator is a compound that can initiate a polymerization reaction with the polymerizable compound.
  • radical polymerization is used as the polymerization initiator. Use an initiator.
  • the radical polymerization initiator is not particularly limited as long as it is a compound that generates radicals by light irradiation and Z or heating.
  • Preferred radical polymerization initiators are compounds that generate radicals upon irradiation with light at 150 to 750 nm and heating at Z or 80 to 200 ° C. Specifically, peroxides, azo compounds, etc. Is preferred. These are selected in consideration of the target connection temperature, connection time, storage stability, etc.
  • the peroxide is preferably an organic peroxide from the viewpoint of high reactivity and storage stability. From the same viewpoint, among organic peroxides, organic peroxides having a half-life of 10 hours at a temperature of 40 ° C or higher and a half-life of 1 minute at a temperature of 200 ° C or lower are preferred. Particularly preferred are organic peroxides having a half-life of 10 hours at a temperature of 50 ° C or higher and a half-life of 1 minute at a temperature of 180 ° C or lower.
  • the connection time is 10 seconds or less, the amount of the radical polymerization initiator for obtaining a sufficient reaction rate is 0.1 to 20% by mass based on the total solid content of the adhesive composition. The preferred range is 2 to 15% by mass.
  • organic peroxides include disilver oxide, peroxydicarbonate, peroxyester, peroxyketal, dialkyl peroxide, nanomouth peroxide, and silyl peroxide. It is done.
  • peroxide esters, dialkyl peroxides, hydride peroxides, and silyl peroxides have a concentration of chlorine ions and organic acids in the initiator of 5000 ppm or less, and produce less organic acids after thermal decomposition. This is especially preferred because it can further reduce the corrosion of metal parts such as circuit electrodes.
  • disilver oxide examples include isobutyl peroxide, 2,4-dichlorobenzoyl peroxide, 3, 5, 5-trimethylhexanoyl peroxide, octane peroxide, lauroyl peroxide, stearoyl peroxide.
  • Oxides, succinic peroxides, benzoylperoxytoluene, benzoyl peroxide Can be mentioned.
  • peroxydicarbonate examples include di-n-propinoliver oxydicarbonate, diisopropyl peroxydicarbonate, bis (4-tert-butylcyclohexyl) peroxydicarbonate, and di-2-ethoxy. Examples include methoxy baroxy dicarbonate, di (2-ethylhexyloxy) dicarbonate, dimethoxybutyl dioxygen dicarbonate, and di (3-methyl-3-methoxybutyl dioxy) dicarbonate.
  • Examples of peroxyesters include Tamil peroxyneodecanoate, 1,1,3,3-tetramethylbutylperoxyneodecanoate, 1-cyclohexylene 1-methylethylperpero Xinoedecanoate, t-hexoxyloxyneodecanoate, t-butylperoxybivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2 , 5 Di (2-ethylhexylperoxy) hexane, 1-cyclohexylene 1-methylethylperoxy-2-ethylhexanate, t-hexyloxy-2-ethylhexanoate, t-butylperoxy-2-ethyl Xanonate, t-butylperoxyisobutyrate, 1,1 bis (t-butylperoxy) cyclohexane,
  • peroxyketals for example, 1, 1 bis (t-hexyloxy) 3, 3, 5 trimethylcyclohexane, 1,1-bis (t-hexyloxy) cyclohexane, 1, Examples include 1-bis (t-butylperoxy) 1,3,3,5 trimethylcyclohexane, 1,1- (t-butylperoxy) cyclododecane, and 2,2-bis (t-butylperoxy) decane.
  • dialkyl peroxide examples include ⁇ , ⁇ , monobis (t-butylperoxy).
  • hydride peroxide examples include diisopropylbenzene hydride peroxide and tamenoid oxid peroxide.
  • silyl peroxides include t-butyltrimethylsilyl peroxide, bis (t-butyl) dimethylsilyl peroxide, t-butyltributylsilyl peroxide, bis (tbutyl) dibulylsilyl peroxide, tris ( Examples thereof include t-butyl) butylsilyl peroxide, t-butyltriallylsilyl peroxide, bis (t-butyl) diallylsilyl peroxide, and tris (t-butyl) arylsilyl peroxide.
  • radical polymerization initiators may be used singly or in combination of two or more, and may be used in combination with a decomposition accelerator, an inhibitor and the like.
  • the concentration of chlorine ions and organic acids contained in the radical polymerization initiator is 5000 ppm or less in order to suppress corrosion of circuit electrodes of circuit members. It is preferable that Furthermore, a radical polymerization initiator that generates less organic acid after thermal decomposition is more preferred. In addition, since the stability of the adhesive film after curing is improved, it is preferable to have a mass retention of 20% by mass or more after being left open at room temperature (25 ° C.) and normal pressure for 24 hours.
  • the adhesive composition may contain a radical polymerization inhibitor such as NO, idroquinone, methyl ether nodule quinone, etc. in a range that does not impair the curability.
  • a radical polymerization inhibitor such as NO, idroquinone, methyl ether nodule quinone, etc. in a range that does not impair the curability.
  • the adhesive composition may contain a thermosetting resin other than the radical polymerizable compound as the polymerizable compound.
  • thermosetting resin is epoxy resin.
  • Epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, talesole novolak type epoxy resin, bisphenol A novolak.
  • These epoxy resins may be halogenated or hydrogenated. These epoxy resins can be used singly or in combination of two or more.
  • the curing agent for the epoxy resin those used as an ordinary epoxy resin curing agent can be used. Specific examples include amine-based curing agents, phenol-based curing agents, acid anhydride-based curing agents, imidazole-based curing agents, and dicyandiamide. Furthermore, tertiary amines and organic phosphorus compounds that are usually used as curing accelerators may be used as appropriate.
  • cationic polymerization may be performed using a sulfone salt, a iodine salt, or the like.
  • the film-forming component is a component that makes the film-forming property of the adhesive film better, and can also improve the adhesiveness and the stress relaxation property during Z or curing.
  • the film-forming component include a film-forming polymer.
  • film-forming polymers include polybutyral resin, polybulal formal resin, polyester resin, polyamide resin, polyimide resin, xylene resin, phenoxy resin, polyurethane resin, and urea resin. Can be mentioned.
  • the film-forming component preferably has a weight average molecular weight of 1,000 to 10,000,000.
  • those obtained by modifying these polymers with radically polymerizable functional groups can also be used. Thereby, the heat resistance of an adhesive film improves.
  • the blending ratio of the film-forming component in the adhesive composition is preferably 2 to 80% by mass with respect to the total amount of the adhesive composition, and more preferably 5 to 70% by mass. It is especially preferable that it is -60 mass%. If the blending ratio of the film-forming component is less than 2% by mass, the stress relaxation property and adhesiveness tend to be lowered, and if it exceeds 80% by mass, the fluidity tends to be lowered.
  • the adhesive composition of the present invention preferably contains conductive particles.
  • Conductive particles enable electrical connection If it has such electroconductivity, it will not specifically limit.
  • the conductive particles include metal particles including alloys such as Au, Ag, Ni, Cu, Co, and solder, and carbon.
  • Conductive particle force Multi-layers in which core particles such as non-conductive glass, ceramics, and plastics are coated with a film containing a conductive material such as the metal or a particle containing a conductive material such as the metal. It may be.
  • the thickness of the coating film is preferably 10 nm or more in order to obtain more reliable conductivity.
  • the conductive particles When powerful multi-layered conductive particles or heat-meltable metal particles are used as the conductive particles, the conductive particles have a deformability that deforms when heated and pressurized. Therefore, when connecting the circuits using the adhesive composition containing such conductive particles, the contact area between the circuit and the conductive particles is increased, and variations in thickness between the plurality of electrodes can be absorbed. Therefore, the viewpoint power of improving reliability is also preferable.
  • the fine particles obtained by further coating the surface of the conductive particles with a resin film or the like can further suppress a short circuit caused by contact between the fine particles. Accordingly, since the insulation between the electrode circuits is improved, it may be blended into the adhesive composition, as appropriate, alone or mixed with conductive particles.
  • the content ratio of the conductive particles in the adhesive composition is preferably 0.1 to 30% by volume, more preferably 0.1 to 20% by volume. A volume% is particularly preferred.
  • the content ratio of the conductive particles is less than 0.1 part by volume, the cured product of the adhesive composition tends to be inferior in conductivity.
  • the content exceeds 30 parts by volume the adhesive composition is used for circuit connection. In some cases, a short circuit between the circuits to be insulated tends to occur.
  • the content of the conductive particles is preferably 0.5 to 30 parts by mass with respect to 100 parts by mass of the thermoplastic resin.
  • the content ratio of the conductive particles is determined based on the volume of each component in the adhesive composition before curing at 23 ° C.
  • the volume of each component may be converted into a volume based on the specific gravity.
  • the adhesive composition of the present invention is for the purpose of further improving the adhesiveness of the adhesive film
  • a coupling agent may be contained.
  • the coupling agent include alkoxysilanes such as trimethoxysilane methacrylate and ⁇ -glycidoxypropyltrimethoxysilane.
  • the adhesive composition according to the present invention can solve the problems of the present invention by adding a filler, a softening agent, an anti-aging agent, a colorant, a flame retardant, a coupling agent, and the like, if necessary. Please follow the range.
  • the adhesive film according to the present invention is suitably used as an adhesive film for electronic materials.
  • a method for producing a laminated film according to a preferred embodiment of the present invention includes a first step of selecting a support having a surface residual adhesion ratio C of 80% or more, and a support selected in the selection step.
  • a second step of forming an adhesive film containing the adhesive composition on the surface of the holder In the first step, a support having a residual surface adhesion C of 80% or more
  • Examples of a method for forming an adhesive film containing the adhesive composition on the support throughout the second step include the following methods. First, a solution obtained by adding a solvent or the like to the adhesive composition obtained by mixing the above-described components, if necessary, is applied on a support to form a coating film. Next, after removing the solvent, the adhesive film is obtained by making the coating film into a solid or semi-solid state. Alternatively, the adhesive composition may be heated to ensure fluidity, then a solvent is added to obtain a solution, and the solution is treated in the same manner as described above to form an adhesive film.
  • the laminated film of the present invention may be a laminated film having a two-layer force of a support and an adhesive film formed on the surface thereof.
  • it may be a laminated film in which two or more layers of adhesive films having the same or different composition and manufacturing method are provided on the surface of the support.
  • the laminated film is obtained by further forming an adhesive film as described above on the surface opposite to the support of the adhesive film formed on the surface of the support as described above. It is done.
  • the laminated film can be obtained by laminating adhesive films formed on the surfaces of separate supports with each other using a laminator or the like.
  • FIG. 4 is a schematic cross-sectional view showing an embodiment of a circuit member connection structure obtained by this manufacturing method.
  • the circuit member connection structure includes a first circuit member 20 and a second circuit member 30 that face each other, and the first circuit member 20 and the second circuit member 30 are provided. Between them, a circuit connecting member 10 is provided for connecting them.
  • the first circuit member 20 includes a circuit board (first circuit board) 21 and a circuit electrode (first circuit electrode) 22 formed on the main surface 21a of the circuit board 21.
  • the second circuit member 30 includes a circuit board (second circuit board) 31 and a circuit electrode (second circuit electrode) 32 formed on the main surface 31 a of the circuit board 31.
  • the circuit boards 21 and 31 include semiconductors, glass, ceramics and other inorganic substances, polyimides, polycarbonates, polyesters, polyethersulfone and other organic substances, and composite materials of these inorganic substances and organic substances (for example, glass Z polyepoxy resin). There are things that can help.
  • the first and second circuit members 20, 30 are not particularly limited as long as electrodes that require electrical connection are formed. Specific examples include electrodes used in liquid crystal displays, such as glass substrates or plastic substrates, printed wiring boards, ceramic wiring boards, and flexible wiring boards, which are made of V, ITO, or the like. Used in combination.
  • the circuit connecting member 10 contains an insulating substance 11 and conductive particles 7.
  • the conductive particles 7 are disposed not only between the circuit electrode 22 and the circuit electrode 32 facing each other but also between the main surfaces 21a and 31a.
  • the circuit electrodes 22 and 32 are electrically connected via the conductive particles 7. That is, the conductive particles 7 are in direct contact with both the circuit electrodes 22 and 32.
  • the conductive particles 7 correspond to the conductive particles that may be contained in the above-mentioned adhesive composition.
  • the opposing circuit electrode 22 and circuit electrode 32 are electrically connected via the conductive particles 7. For this reason, the connection resistance between the circuit electrodes 2 2 and 32 is sufficiently reduced. Therefore, the current between circuit electrodes 22 and 32 The flow can be made smooth, and the functions of the circuit can be fully exhibited.
  • circuit connecting member 10 does not contain the conductive particles 7, the circuit electrode 22 and the circuit electrode 32 are in direct contact with each other to be electrically connected.
  • the circuit connecting member 10 is made of a cured product of the adhesive film. Therefore, the connection reliability of the circuit connection member 10 with respect to the circuit member 20 or 30 is sufficiently high.
  • the first circuit member 20 and the film-like circuit connection material 40 described above are prepared (see FIG. 5 (a)).
  • the film-like circuit connecting material 40 is the above-described adhesive film, and is formed on the surface of the support 1 according to the present invention to form the laminated film 100 at the stage of preparation. Further, the film-like circuit connecting material 40 here contains conductive particles 7.
  • the film-like circuit connecting material 40 is usually drawn out from the state of being wound around the core and cut to a required length.
  • the film-like circuit connecting material 40 is placed on the surface of the first circuit member 20 on which the circuit electrodes 22 are formed. At this time, since the film-like circuit connecting material 40 is provided on the support 1, the film-like circuit connecting material 40 is placed on the first circuit member 20 so that the film-like circuit connecting material 40 side faces the first circuit member 20. .
  • the film-like circuit connecting material 40 can be easily interposed between the first circuit member 20 and the second circuit member 30. Connection work with the second circuit member 30 can be easily performed.
  • the film-like circuit connecting material 40 is temporarily fixed (temporarily connected) to the first circuit member 20. At this time, you may pressurize, heating. However, the heating temperature is a temperature at which the adhesive composition in the film-like circuit connecting material 40 is not cured.
  • the support 1 is peeled from the film-like circuit connecting material 40 (see FIG. 5 (b)).
  • the support 1 is a support according to the present invention, the support 1 and the film-like circuit connection material 40 are laminated, such as transfer of the release treatment agent from the support 1 to the film-like circuit connection material 40. It is possible to sufficiently suppress the deterioration factor of the connection reliability due to the fact.
  • the film-like circuit connecting material 40 is irradiated with actinic rays.
  • Fig. 5 (c) the second circuit member 30 is placed on the film-like circuit connecting material 40 so that the second circuit electrode faces the first circuit member 20.
  • the film-like circuit connecting material 40 is pressurized through the first and second circuit members 20 and 30 in the directions of arrows A and B in FIG.
  • the heating temperature at this time is a temperature at which the adhesive composition of the present invention can be cured.
  • the film-like circuit connecting material 40 is cured and the main connection is performed, so that a circuit member connection structure as shown in FIG. 4 is obtained.
  • the connection conditions are appropriately selected depending on the intended use, the adhesive composition, and the circuit member.
  • the heating temperature is 90 to 250 ° C
  • the pressure is generally 0.1 to 10 to the adherend.
  • connection time is preferably 1 second to 10 minutes.
  • the apparatus for heating and pressurizing is not particularly limited! However, in consideration of productivity and convenience, a pressurizing and heating apparatus including a pressurizing head with a built-in heater is preferable.
  • the method for producing a laminated film according to another embodiment of the present invention includes a step of forming a support so that the residual adhesion C on the surface is 80% or more, and the support
  • the composition and the composition are substantially the same as those of the support selected by the above-described support screening method and having a surface residual adhesion ratio C of 80% or more.
  • the support may be formed by a manufacturing method.
  • a curing process using light, ultrasonic waves, Z, or electromagnetic waves may be further performed.
  • an adhesive film may be used as a material for a semiconductor connection member that connects a semiconductor element and a circuit pattern in a semiconductor device.
  • FIG. 6 is a schematic cross-sectional view showing an embodiment of this semiconductor device.
  • the semiconductor device 80 of the present embodiment includes a semiconductor element 50 and a substrate 60 that serves as a semiconductor support member, and the semiconductor element that electrically connects them between the semiconductor element 50 and the substrate 60.
  • a connecting member 40 is provided.
  • the semiconductor element connection member 40 is laminated on the main surface 60a of the substrate 60, and the semiconductor element 50 is further laminated on the semiconductor element connection member 40.
  • the substrate 60 includes a circuit pattern 61, and the circuit pattern 61 is electrically connected to the semiconductor element 50 via the semiconductor connection member 40 on the main surface 60 a of the substrate 60 or directly. These are sealed with a sealing material 70 to form a semiconductor device 80.
  • the material of the semiconductor device 50 is not particularly limited, but is a group 4 semiconductor device of silicon, germanium, a group IIIV compound semiconductor device such as GaAs, InP, GaP, InGaAs, or the like, such as ⁇ gTe, HgCdTe, or CdMnTe.
  • Group VI compound semiconductor devices and various devices such as CuInSe (CIS) can be used.
  • the semiconductor element connecting member 40 contains the insulating substance 11 and the conductive particles 7, and is a cured product of the adhesive film of the present invention.
  • the conductive particles 7 are disposed not only between the semiconductor element 50 and the circuit pattern 61 but also between the semiconductor element 50 and the main surface 60a.
  • the semiconductor element 50 and the circuit pattern 61 are electrically connected via the conductive particles 7. For this reason, the connection resistance between the semiconductor element 50 and the circuit pattern 61 is sufficiently reduced. Therefore, the current flow between the semiconductor element 50 and the circuit pattern 61 can be made smooth, and the functions of the semiconductor can be fully exhibited.
  • the semiconductor element connection member 40 is made of the cured adhesive film according to the present invention, the connection reliability between the semiconductor element 50 and the circuit pattern 61 is improved, and the yield of the semiconductor device 80 is increased. Will be high enough.
  • PET film A polyethylene terephthalate (hereinafter referred to as “PET”) film was prepared as a base film.
  • amino alkyd resin trade name “TA31-209” manufactured by Hitachi Chemical Co., Ltd.
  • acid catalyst trade name “Dryer 900” manufactured by Hitachi Chemical Polymer Co., Ltd.
  • a product name “AH3” manufactured by Teijin Limited was prepared as the base material for support # 7
  • a product name “UH2” manufactured by Teijin Limited was prepared as the base material for support # 8.
  • the conductive particles are formed by forming a 0.2 ⁇ m thick nickel layer and a 0.04 ⁇ m thick gold layer in this order on the surface of polystyrene-based particles, and then forming a polybutyl alcohol on the surface. Obtained by forming a layer consisting of .
  • the average particle diameter of the conductive particles was 4 ⁇ m.
  • the first adhesive composition was applied onto the surface of the substrate for support # 1 using a coating apparatus to obtain a coating film.
  • the coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a first intermediate laminate having an adhesive film thickness of 25 ⁇ m.
  • the film-forming component fluorene-biphenyl type phenolic resin 40g the same bisphenol A type phenolic resin 10g, and the polymerizable compound tris (acrylochelchetil) ) 10g of isocyanurate, 10g of urethane acrylate, 10g of trimethoxysilane metatalylate as coupling agent, and 3g of n-butyl-4,4-bis (t-butylperoxy) valerate as polymerization initiator.
  • the second adhesive composition was applied onto the surface of the substrate for support # 2 using a coating apparatus to obtain a coating film.
  • the coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a second intermediate laminate having an adhesive film thickness of 25 ⁇ m.
  • the first intermediate laminate and the second intermediate laminate are laminated such that the adhesive films overlap each other and the adhesive films are sandwiched between the respective substrates for the support.
  • Lamination was performed under the conditions of ° C, 0.5 mmZmin, no pressure, and a laminated film was obtained.
  • the film-forming component fluorene biphenol type phenolic resin 10g, bisphenol A type phenolic resin 30g, polymerizable compound phenol novolac type epoxy resin 20g, coupling agent 5 g of ⁇ -glycidoxypropyltrimethoxysilane and 40 g of an imidazole curing agent as a curing agent were blended. Further, 40 g of conductive particles were mixed and dispersed in the same manner as in Example 1 to obtain a first adhesive composition. [0113] Next, a coating film was obtained by applying the first adhesive composition on the surface of the substrate for support # 1 using a coating apparatus. The coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a first intermediate laminate having an adhesive film thickness of 12 m.
  • the film-forming component fluorene biphenol type phenolic resin 10 g was obtained by blending 20 g of rosin, 5 g of ⁇ -glycidoxypropyltrimethoxysilane as a coupling agent, and 40 g of an imidazole curing agent as a curing agent.
  • the second adhesive composition was applied onto the surface of the substrate for support # 2 using a coating apparatus to obtain a coating film.
  • the coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a second intermediate laminate having an adhesive film thickness of 13 m.
  • the first intermediate laminate and the second intermediate laminate are laminated such that the adhesive films overlap each other and the adhesive films are sandwiched between the respective substrates for support.
  • Lamination was performed under the conditions of ° C, 0.5 mmZmin, no pressure, and a laminated film was obtained.
  • Example 2 In the same manner as in Example 1 except that the support substrate # 7 was used instead of the support substrate # 1, and the support substrate # 8 was used instead of the support substrate # 2. A laminated film was obtained.
  • the pasting conditions were: heating temperature 90 ° C, pressure IMPa (paste 3 seconds).
  • an IC chip with a gold bump electrode with a chip size of 1.7 mm x 17 mm x 0.55 mm, a bump area of 50 m x 50 ⁇ m, a bump height of 15 ⁇ m, and a bump count of 358 Prepared.
  • the base material for support # 1 of the laminated film attached to the circuit member was peeled off.
  • alignment is performed so that the adhesive film exposed by peeling off the substrate for support # 1 and the gold bump electrode side of the IC chip face each other, and the IC chip and the electrodes of the circuit member can be connected to each other.
  • the circuit member with laminated film and the IC chip were superposed.
  • connection temperature 200 ° C
  • pressing pressure 80 MPa (per total bump area)
  • connection resistance measurement samples according to Examples 2 to 4 and Comparative Examples 1 and 2 were obtained in the same manner as described above. Obtained.
  • connection resistance the electrical resistance value (connection resistance) between the electrode circuit in the circuit member and the bump electrode in the IC chip was measured using a digital multimeter by the 4-terminal measurement method. It was measured. The measurement current was 1 mA.
  • the measurement was performed immediately after preparation of the connection resistance measurement sample (initial stage) and after the sample was exposed to thermal cycle conditions (after cycle).
  • the thermal cycle used was a thermal shock test apparatus (trade name “TSA-41L-A” manufactured by ESPEC) .
  • TSA-41L-A manufactured by ESPEC
  • the present invention it is possible to provide a laminated film obtained by laminating an adhesive film on the surface of a support, wherein the adhesive film has sufficient connection reliability.

Abstract

Disclosed is a multilayer film obtained by forming an adhesive film containing an adhesive composition on the surface of a supporting body. This multilayer film is characterized in that the supporting body has a surface having a residual adhesion ratio C5 of not less than 80%.

Description

明 細 書  Specification
積層フィルム及びその製造方法、積層フィルム用支持体の選別方法、並 びに積層フィルム用支持体の評価方法  Laminated film and production method thereof, method for selecting laminated film support, and evaluation method for laminated film support
技術分野  Technical field
[0001] 本発明は、積層フィルム及びその製造方法、積層フィルム用支持体の選別方法、 並びに積層フィルム用支持体の評価方法に関する。  The present invention relates to a laminated film and a method for producing the same, a method for selecting a laminated film support, and a method for evaluating a laminated film support.
背景技術  Background art
[0002] 半導体及び液晶ディスプレイなどの精密電子機器の分野にお!ヽて、電子材料を基 板等に固定し、回路接続を行うために、各種の接着剤が使用されている。これらの分 野では半導体チップや回路の高密度化及び高精密化が進んでいるため、それらを 接着'固定する接着剤にも高い接着力及び信頼性が求められている。  [0002] In the field of precision electronic equipment such as semiconductors and liquid crystal displays, various adhesives are used to fix electronic materials to a substrate and make circuit connections. In these fields, semiconductor chips and circuits are becoming denser and more precise, and adhesives that bond and fix them are also required to have high adhesive strength and reliability.
[0003] 例えば、液晶ディスプレイと TCP (Tape Carrier Package)との接続、 FPC (Flexible Printed Circuit)と TCPとの接続又は FPCとプリント配線板との接続には、接着剤中 に導電性粒子を分散させた異方導電性接着剤が使用されている。これは、回路接続 をより確実に行うことを意図している。また、半導体シリコンチップを基板に実装する 場合、従来のワイヤーボンドに代わり、半導体シリコンチップをフェイスダウンで基板 に直接実装するいわゆるフリップチップ実装が行われている。この場合でも、異方導 電性接着剤の適用が開始されて!ヽる。 [0003] For example, for connection between a liquid crystal display and TCP (Tape Carrier Package), connection between an FPC (Flexible Printed Circuit) and TCP, or connection between an FPC and a printed wiring board, conductive particles are dispersed in an adhesive. An anisotropic conductive adhesive is used. This is intended to make the circuit connection more reliable. When a semiconductor silicon chip is mounted on a substrate, so-called flip chip mounting is performed in which the semiconductor silicon chip is directly mounted on the substrate face down instead of the conventional wire bond. Even in this case, the application of anisotropic conductive adhesive has started! Speak.
[0004] 上述の接着剤として電子材料用の接着フィルムを用いる場合、使用前の接着フィ ルムは、通常、その主面の少なくとも片側に支持体を備えて、積層フィルムを構成し ている。支持体は、その表面上に設けられた接着フィルムを容易に除去できるように 、上記表面を剥離処理剤により被覆されているものが多い。また、この剥離処理剤は 、被着物を支持体から剥がしやすくするため、剥離処理剤の成分の一部や、剥離処 理剤の成分に含まれる低分子量成分が意図的に被着物側に転写されるように設計 されている。それにより、支持体からの被着物の軽剥離を実現しているが、そのことを 原因として、接着フィルムの表面に剥離処理剤の一部が移行してしまう。このような剥 離処理剤の一部 (異物)は、実装後の接続信頼性の低下を引き起こすことがある。 [0005] 代表的な剥離処理剤として、シリコーン榭脂製の剥離処理剤が広く知られている。 この剥離処理剤で被覆された支持体を用いた積層フィルムは、その剥離処理剤が接 着フィルム側に特に容易に移行する (例えば、特許文献 1、 2参照)。そこで、特許文 献 3に記載のように、シリコーン榭脂を含まない支持体 (剥離フィルム)を採用する対 策が考えられる。 [0004] When an adhesive film for electronic materials is used as the above-mentioned adhesive, the adhesive film before use usually comprises a support on at least one side of the main surface to constitute a laminated film. In many cases, the support is coated with a release treatment agent so that the adhesive film provided on the surface can be easily removed. In addition, since this release treatment agent makes it easy to peel off the adherend from the support, a part of the release treatment agent component and the low molecular weight component contained in the release treatment agent component are intentionally transferred to the adherend side. It is designed to be Thereby, the light peeling of the adherend from the support is realized, but due to this, a part of the peeling treatment agent is transferred to the surface of the adhesive film. Some of these stripping agents (foreign matter) may cause a decrease in connection reliability after mounting. [0005] As a typical release treatment agent, a release treatment agent made of silicone resin is widely known. In a laminated film using a support coated with this release treatment agent, the release treatment agent moves particularly easily to the adhesive film side (see, for example, Patent Documents 1 and 2). Therefore, as described in Patent Document 3, it is conceivable to adopt a support (release film) that does not contain silicone resin.
特許文献 1 :特開 2001—123130号公報  Patent Document 1: JP 2001-123130 A
特許文献 2 :特開 2002— 331614号公報  Patent Document 2: Japanese Patent Laid-Open No. 2002-331614
特許文献 3:特開 2001— 171033号公報  Patent Document 3: Japanese Patent Laid-Open No. 2001-171033
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0006] し力しながら、シリコーン榭脂を含まない支持体であっても、先に述べたのと同様に[0006] In the same way as described above, even if the support does not contain silicone resin,
、剥離処理剤成分の一部や、剥離処理剤成分に含まれる低分子量成分を転写する ことによって軽剥離を実現している。したがって、そのような支持体を用いた場合でもLight release is realized by transferring a part of the release treatment component and a low molecular weight component contained in the release treatment component. Therefore, even when using such a support
、接続信頼性の低下を引き起こす。 Cause a decrease in connection reliability.
課題を解決するための手段  Means for solving the problem
[0007] そこで、本発明は、支持体の表面上に接着フィルムを積層してなる積層フィルムで あって、上記接着フィルムが十分な接続信頼性を有する積層フィルム及びその製造 方法、積層フィルム用支持体の選別方法、並びに積層フィルム用支持体の評価方法 を提供することを目的とする。 Therefore, the present invention is a laminated film obtained by laminating an adhesive film on the surface of a support, the laminated film having sufficient connection reliability, and a method for producing the same, and a laminated film support It is an object of the present invention to provide a body sorting method and a method for evaluating a laminated film support.
[0008] 上記目的を達成するために、本発明は、支持体の表面上に、接着剤組成物を含有 する接着フィルムが形成されてなる積層フィルムであって、上記支持体は、その表面 の残留接着率 Cが 80%以上である積層フィルムを提供する。 In order to achieve the above object, the present invention provides a laminated film in which an adhesive film containing an adhesive composition is formed on the surface of a support, and the support is formed on the surface thereof. A laminated film having a residual adhesion ratio C of 80% or more is provided.
5  Five
[0009] ここで、支持体表面の「残留接着率 C」は下記のようにして導出される数値である。  Here, “residual adhesion rate C” on the surface of the support is a numerical value derived as follows.
5  Five
すなわち、まず、標準試料である粘着テープ (31Bテープ)と所定の金属板との間の 剥離強度を測定し、これを基準剥離強度 Aとする。次いで、上記粘着テープを測定 対象である支持体に貼り付けて力 剥離し、同じく所定の金属板との間の剥離強度 を測定する手順を 5回繰り返し、 5回目の剥離強度を Bとする。上述の剥離強度 A及  That is, first, the peel strength between an adhesive tape (31B tape), which is a standard sample, and a predetermined metal plate is measured, and this is used as the reference peel strength A. Next, the adhesive tape is affixed to the substrate to be measured and peeled off, and the procedure for measuring the peel strength with a predetermined metal plate is repeated 5 times. Peel strength A and above
5  Five
び Bから、下記式(1)で表される残留接着率 Cを導出する。 C =B /AX 100 (1) And B, the residual adhesion ratio C expressed by the following formula (1) is derived. C = B / AX 100 (1)
5 5  5 5
上述の特許文献 2にも「残留接着率」という用語が記載されている。しかし、特許文献 2に記載の「残留接着率」は、本発明で規定する残留接着率 Cに対して測定方法が  The above-mentioned Patent Document 2 also describes the term “residual adhesion rate”. However, the “residual adhesion rate” described in Patent Document 2 can be measured using the residual adhesion rate C defined in the present invention.
5  Five
同一ではない。また、特許文献 2では、測定する剥離強度が 1回目であるという点に おいても、本発明とは異なっている。このことは後述するように重要な意味を持つ。 これについて、図 1〜3を参照しながら、より詳細に説明する。  Not the same. Patent Document 2 also differs from the present invention in that the peel strength to be measured is the first time. This has an important meaning as will be described later. This will be described in more detail with reference to FIGS.
[0010] [1]まず、積層フィルムを構成する支持体 8、幅 25mmのアクリルフォーム両面接合 テープ 4、ガラス板 3、幅 10mmの 31Bテープ 2 (日東電工社製)、及びステンレス綱 ( SUS)板 1を準備する。次に、ガラス板 3の表面を、トルエン、アセトン、メタノール等の 各種溶剤を使用して洗浄し、その表面上に付着した有機成分及び無機成分を除去 する。続いて、洗浄後のガラス板 3の表面に、長さ 60mmに切り出したアクリルフォー ム両面接合テープ 4を、質量 2kgのゴムロールを用いて貼り付ける。  [0010] [1] First, a support 8 constituting a laminated film, a 25 mm wide acrylic foam double-sided adhesive tape 4, a glass plate 3, a 10 mm wide 31B tape 2 (manufactured by Nitto Denko), and a stainless steel (SUS) Prepare board 1. Next, the surface of the glass plate 3 is washed using various solvents such as toluene, acetone, methanol, etc., and organic components and inorganic components adhering to the surface are removed. Subsequently, an acrylic foam double-sided adhesive tape 4 cut out to a length of 60 mm is attached to the surface of the glass plate 3 after washing using a rubber roll having a mass of 2 kg.
[0011] [2]次 、で、アクリルフォーム両面接合テープ 4の剥離基材を剥離して接着面を露 出させる。更に、アクリルフォーム両面接合テープ 4の上記接着面の中央部上に、 20 mm X 55mmの矩形膜状に切り出した支持体 8を、その片方の主面全体が載るよう にして配置する。  [2] Next, the release substrate of the acrylic foam double-sided adhesive tape 4 is peeled to expose the adhesive surface. Further, a support 8 cut out in a rectangular film shape of 20 mm × 55 mm is arranged on the center portion of the adhesive surface of the acrylic foam double-sided adhesive tape 4 so that the entire main surface of one side is placed.
[0012] [3]次に、支持体 8の表面に、新しく長さ 70mmに切り出した 31Bテープ 2を、質量 2 kgのゴムロールを用いて、シヮが入らないように貼り付けて、図 1 (a)の模式正面図、 及び図 2の模式平面図に示すように構成する。続いて、支持体 8の表面に貼り付けら れた 31Bテープ 2について、引張り試験機により、図 1 (b)の模式正面図に示すように して 50mmZminの引っ張り速度で 180° 剥離を行う。こうして剥離された 31Bテー プ 6を得る。  [0012] [3] Next, 31B tape 2 newly cut to a length of 70 mm was attached to the surface of the support 8 using a rubber roll with a mass of 2 kg so that no scissors would enter, and FIG. It is configured as shown in the schematic front view of (a) and the schematic plan view of FIG. Subsequently, the 31B tape 2 affixed to the surface of the support 8 is peeled 180 ° by a tensile tester at a pulling speed of 50 mmZmin as shown in the schematic front view of FIG. 1 (b). In this way, the 31B tape 6 is obtained.
[0013] [4]残留接着率 Cのみを測定する場合は、上記(3)の操作を 5回繰り返す。この際  [0013] [4] When only the residual adhesion rate C is measured, the above operation (3) is repeated five times. On this occasion
5  Five
、支持体 8の表面に貼り付ける 31Bテープ 2は、都度新しく切り出したものを用いる。  The 31B tape 2 to be affixed to the surface of the support 8 is newly cut each time.
[0014] [5]次いで、ステンレス綱板 1の表面を、トルエン、アセトン、メタノール等の各種溶 剤を使用して洗浄し、その表面上に付着した有機成分及び無機成分を除去する。更 に、 5回目の上記 [3]の操作で得られた 31Bテープ 6を、洗浄後のステンレス綱板 1 の表面に、質量 2kgのゴムロールを用いて、シヮが入らないように貼り付けて、図 l (c )の模式正面図に示すように構成する。 [5] Next, the surface of the stainless steel plate 1 is washed using various solvents such as toluene, acetone, methanol, etc., and organic components and inorganic components adhering to the surface are removed. In addition, the 31B tape 6 obtained in the fifth operation [3] above is affixed to the surface of the washed stainless steel plate 1 using a rubber roll with a mass of 2 kg so that no scissors will enter. Figure l (c ) Is configured as shown in the schematic front view.
[0015] [6]続いて、ステンレス綱板 1に貼り付けられた 31Bテープ 6について、引張り試験 機〖こより、図 1 (d)の模式正面図に示すようにして 50mmZminの弓 |つ張り速度で 18 0° 剥離を行う。この時の剥離強度 Bを測定し記録する。  [0015] [6] Next, for 31B tape 6 affixed to stainless steel plate 1, from the tensile test machine, as shown in the schematic front view of Fig. 1 (d), a bow of 50mmZmin | At 180 ° peeling. Measure and record the peel strength B at this time.
5  Five
[0016] [7]上述の [1]〜 [6]の操作とは別に、 31Bテープ 2及びステンレス綱板 1を準備す る。更に、ステンレス綱板 1の表面を、トルエン、アセトン、メタノール等の各種溶剤を 使用して洗浄し、その表面上に付着した有機成分及び無機成分を除去する。続いて 、長さ 70mmに切り出した 31Bテープ 2を、洗浄後のステンレス綱板 1の表面に、質 量 2kgのゴムロールを用いて、シヮが入らないように貼り付けて、図 3 (a)の模式正面 図に示すように構成する。  [7] In addition to the operations [1] to [6] described above, 31B tape 2 and stainless steel plate 1 are prepared. Furthermore, the surface of the stainless steel plate 1 is cleaned using various solvents such as toluene, acetone, methanol, etc., and organic components and inorganic components adhering to the surface are removed. Next, 31B tape 2 cut out to a length of 70 mm was affixed to the surface of the washed stainless steel plate 1 using a rubber roll with a mass of 2 kg so that no scissors could enter. It is configured as shown in the schematic front view.
[0017] [8]その後、ステンレス綱板 1に貼り付けられた 31Bテープ 2について、引張り試験 機〖こより、図 3 (b)の模式正面図に示すようにして 50mmZminの弓 |つ張り速度で 18 0° 剥離を行う。この時の剥離強度 Aを測定し記録する。  [0017] [8] After that, for 31B tape 2 affixed to stainless steel plate 1, from a tensile test machine, as shown in the schematic front view of Fig. 3 (b), at a bow tension of 50mmZmin 18 0 ° Peel off. Measure and record the peel strength A at this time.
[0018] [9]上述のようにして得られた剥離強度 A及び Bから、上記式(1)により、残留接着  [0018] [9] From the peel strengths A and B obtained as described above, residual adhesion is obtained by the above equation (1).
5  Five
率 Cを導出する。  Deriving rate C.
5  Five
[0019] なお、残留接着率 Cは、上記 [3]の操作を 5回繰り返した後に得られる数値である  [0019] The residual adhesion rate C is a numerical value obtained after repeating the operation [3] five times.
5  Five
1S 上記 [3]の操作を 1回行う毎に、次いで、上記 [5]及び [6]の操作を行って、剥離 強度を測定してもよい。この場合、上記 [3]の操作を n回繰り返した後に、 [6]の操作 により得られる剥離強度を Bとすると、対応する残留接着率 Cは、下記式 (2)で表さ れる。  1S The peel strength may be measured by performing the operations [5] and [6] each time the operation [3] is performed once. In this case, if the peel strength obtained by the operation of [6] is B after the operation of [3] is repeated n times, the corresponding residual adhesion rate C is expressed by the following formula (2).
C =B /AX 100 (2)  C = B / AX 100 (2)
[0020] 本発明の積層フィルムが、十分な接続信頼性を有する要因は下記のとおりと考えら れる。ただし、要因はこれに限定されない。 [0020] The factors that the laminated film of the present invention has sufficient connection reliability are considered as follows. However, the factor is not limited to this.
[0021] 本発明で規定する残留接着率 Cが 80%以上である支持体とは、剥離処理剤の転 [0021] A support having a residual adhesion ratio C of 80% or more as defined in the present invention is a transfer of a release treatment agent.
5  Five
写のみによらない軽剥離設計であることを意味する。すなわち、従来のシリコーン榭 脂系の剥離処理剤では、上述のとおり、剥離処理剤成分の一部や、剥離処理剤成 分に含まれる低分子量成分を転写することによって軽剥離を実現して!/ヽる。このよう な剥離処理剤は、上記剥離試験を何度繰り返しても、剥離処理剤成分の一部や、剥 離処理剤成分に含まれる低分子量成分が剥がれ落ちる。そのため、残留接着率 C It means that it is a light release design that does not depend only on the photo. In other words, with conventional silicone resin-based release treatment agents, as described above, light release can be realized by transferring a part of the release treatment component or a low molecular weight component contained in the release treatment component! / Speak. Such a release treatment agent can remove a part of the release treatment agent component or the release treatment no matter how many times the above-mentioned release test is repeated. The low molecular weight component contained in the release agent component is peeled off. Therefore, residual adhesion rate C
5 は低い数値のままである。一方、軽剥離が剥離処理剤の転写のみによらない剥離処 理剤では、剥離試験が 1回目、 2回目のうちは、同じように剥離処理剤の一部が転写 したり、剥離処理剤成分に含まれる低分子量成分が剥がれ落ちたりする。したがって 、 1回目、 2回目における残留接着率は低い数値を表す。ところが、剥離試験を 5回ま で繰り返すことにより、そのような転写及び剥がれ落ちは完了するため、残留接着率 Cは 80%以上となる。このような残留接着率 Cを示す支持体は、実装時における接 5 remains low. On the other hand, in the case of a release treatment agent in which light release does not depend only on the transfer of the release treatment agent, a part of the release treatment agent is transferred in the same manner during the first and second release tests, or the release treatment agent component The low molecular weight component contained in the flakes off. Therefore, the residual adhesion rate in the first and second times represents a low value. However, by repeating the peeling test up to 5 times, such transfer and peeling-off are completed, and the residual adhesion rate C becomes 80% or more. Such a support having a residual adhesion rate C is in contact with the mounting.
5 5 5 5
着フィルムへの異物の移行を抑制されて ヽるため、接着フィルムの接続信頼性を十 分に高めることができると推測される。  It is speculated that the connection reliability of the adhesive film can be sufficiently enhanced because the transfer of foreign matter to the adhesive film is suppressed.
[0022] 本発明に係る接着剤組成物は、導電性粒子を含むことが好ましい。これ〖こより、同 一基板上の回路電極同士の絶縁状態を維持しつつ、回路部材同士をより安定して 電気的に接続できる。 [0022] The adhesive composition according to the present invention preferably contains conductive particles. Thus, the circuit members can be more stably electrically connected while maintaining the insulation state between the circuit electrodes on the same substrate.
[0023] 本発明は、支持体の表面上に、接着剤組成物を含有する接着フィルムが形成され てなる積層フィルムの、支持体を選別する積層フィルム用支持体の選別方法であつ て、支持体の表面の残留接着率 Cが 80%以上である支持体を選別する方法を提供  [0023] The present invention is a method for selecting a support for a laminated film, in which the support is selected from a laminate film in which an adhesive film containing an adhesive composition is formed on the surface of the support. Provides a method for selecting a support with a residual adhesion C of 80% or more on the surface of the body
5  Five
する。この支持体の選別方法によれば、選別された支持体の表面上に接着フィルム を積層してなる積層フィルムを用いて、回路電極同士等を接続する際、その支持体 力も剥離して回路電極等に挟まれる接着フィルムが、回路電極同士等の接続信頼性 を十分に保持することができる。  To do. According to this method of selecting a support, when connecting circuit electrodes and the like using a laminated film obtained by laminating an adhesive film on the surface of the selected support, the support force is also peeled off to connect the circuit electrodes. The adhesive film sandwiched between the electrodes can sufficiently maintain the connection reliability between the circuit electrodes.
[0024] 本発明は、表面の残留接着率 Cが 80%以上である支持体を選別する工程と、選 [0024] The present invention includes a step of selecting a support having a surface residual adhesion ratio C of 80% or more, and a selection process.
5  Five
別工程にお!ヽて選別された支持体の表面上に、接着剤組成物を含有する接着フィ ルムを形成する工程とを有する積層フィルムの製造方法を提供する。また、本発明は 、表面の残留接着率 Cが 80%以上となるように支持体を形成する工程と、その支持  And a step of forming an adhesive film containing the adhesive composition on the surface of the support selected in a separate step. The present invention also includes a step of forming a support so that the residual adhesion ratio C of the surface is 80% or more, and the support
5  Five
体の表面上に、接着剤組成物を含有する接着フィルムを形成する工程とを有する積 層フィルムの製造方法を提供する。これら製造方法によると、得られる積層フィルムを 用いて回路電極同士等を接続する際、支持体から剥離して回路電極等に挟まれる 接着フィルムが、回路電極同士等の接続信頼性を十分に保持することができる。  And a step of forming an adhesive film containing the adhesive composition on the surface of the body. According to these manufacturing methods, when connecting the circuit electrodes and the like using the obtained laminated film, the adhesive film that is peeled off from the support and sandwiched between the circuit electrodes and the like sufficiently maintains the connection reliability between the circuit electrodes and the like. can do.
[0025] 本発明は、標準試料である粘着テープと所定の金属板との剥離強度を測定し、こ れを基準剥離強度 Aとする工程と、上記粘着テープを測定対象である積層フィルム 用支持体に貼り付けて力 剥離し、上記所定の金属板との間の剥離強度を測定する 手順を 5回繰り返し、 5回目の剥離強度を Bとする工程と、上述の剥離強度 A及び B [0025] The present invention measures the peel strength between an adhesive tape, which is a standard sample, and a predetermined metal plate. The process of setting this as the reference peel strength A and the procedure for measuring the peel strength between the above-mentioned predetermined metal plate by attaching the adhesive tape to the laminated film support that is the object of measurement and peeling the force Repeatedly, the fifth peel strength as B and the above-mentioned peel strength A and B
5 5 から、下記式(1)で表される残留接着率 Cを導出する工程とを有する積層フィルム用  From 5 5 for a laminated film having a step of deriving a residual adhesion ratio C represented by the following formula (1)
5  Five
支持体の評価方法を提供する。  A method for evaluating a support is provided.
C =B /AX 100 (1)  C = B / AX 100 (1)
5 5  5 5
[0026] この評価方法によると、支持体から剥離した後の接着フィルムが十分な接続信頼性 を有する力否かについて、十分適切に判断することが可能となる。  [0026] According to this evaluation method, it is possible to sufficiently adequately determine whether or not the adhesive film after peeling from the support has sufficient connection reliability.
発明の効果  The invention's effect
[0027] 本発明によると、支持体の表面上に接着フィルムを積層してなる積層フィルムであ つて、上記接着フィルムが十分な接続信頼性を有する積層フィルムを提供することが できる。  [0027] According to the present invention, there can be provided a laminated film obtained by laminating an adhesive film on the surface of a support, wherein the adhesive film has sufficient connection reliability.
図面の簡単な説明  Brief Description of Drawings
[0028] [図 1]剥離強度 Bを説明するための工程正面図である。 FIG. 1 is a process front view for explaining peel strength B.
5  Five
[図 2]剥離強度 Bを説明するための模式平面図である。  FIG. 2 is a schematic plan view for explaining peel strength B.
5  Five
[図 3]剥離強度 Aを説明するための工程正面図である。  FIG. 3 is a process front view for explaining peel strength A.
[図 4]本発明に係る回路部材の接続構造の一実施形態を示す概略断面図である。  FIG. 4 is a schematic sectional view showing an embodiment of a circuit member connection structure according to the present invention.
[図 5]本発明に係る回路部材を接続する一連の工程図である。  FIG. 5 is a series of process diagrams for connecting circuit members according to the present invention.
[図 6]本発明に係る半導体装置の一実施形態を示す概略断面図である。  FIG. 6 is a schematic cross-sectional view showing an embodiment of a semiconductor device according to the present invention.
符号の説明  Explanation of symbols
[0029] 1· ··ステンレス綱(SUS)板、 2、 6· ··31Βテープ、 3· ··ガラス板、 4…アクリルフォーム 両面接合テープ、 7· ··導電性粒子、 8…支持体、 10· ··回路接続部材、 11· ··絶縁性 物質、 20…第 1の回路部材、 21· ··第 1の回路基板、 22…第 1の回路電極、 30…第 2 の回路部材、 31· ··第 2の回路基板、 32…第 2の回路電極、 40· ··半導体素子接続部 材、 50· ··半導体素子、 60…基板、 61…回路パターン、 70…封止材、 80· "半導体 装置。  [0029] 1 ··· Stainless steel (SUS) plate, 2, 6 ···· 31Β tape, 3 ··· Glass plate, 4 ··· Acrylic foam Double-sided adhesive tape, ························· , 10 ··· Circuit connection member, 11 ··· Insulating material, 20 ··· First circuit member, ············· 1st circuit board, 22 ··· 1st circuit electrode, 30 · · · 2nd circuit member 31 ... Second circuit board, 32 ... Second circuit electrode, 40 ... Semiconductor element connection member, 50 ... Semiconductor element, 60 ... Substrate, 61 ... Circuit pattern, 70 ... Sealant , 80 · “Semiconductor devices.
発明を実施するための最良の形態 [0030] 以下、必要に応じて図面を参照しつつ、本発明の好適な実施形態について詳細に 説明する。なお、図面中、同一要素には同一符号を付すこととし、重複する説明は省 略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係 に基づくものとする。更に、図面の寸法比率は図示の比率に限られるものではない。 また、本明細書における「 (メタ)アクリル酸」とは「アクリル酸」及びそれに対応する「メ タクリル酸」を意味し、「 (メタ)アタリレート」とは「アタリレート」及びそれに対応する「メ タクリレート」を意味し、「 (メタ)アタリロキシ基」とは「アタリロキシ基」及びそれに対応 する「メタクリロキシ基」を意味する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. In the drawings, the same elements are denoted by the same reference numerals, and duplicate descriptions are omitted. In addition, positional relationships such as up, down, left and right are based on the positional relationships shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios. In the present specification, “(meth) acrylic acid” means “acrylic acid” and its corresponding “methacrylic acid”, and “(meth) acrylate” means “atallylate” and its corresponding “ “Methacrylate” means “(meth) atalyloxy group” means “atallyloxy group” and the corresponding “methacryloxy group”.
[0031] 本発明の好適な実施形態に係る積層フィルムは、支持体の表面上に、接着剤組成 物を含有する接着フィルムが形成されてなる積層フィルムであって、上記支持体は表 面の残留接着率 C力 ¾0%以上であるものである。  [0031] A laminated film according to a preferred embodiment of the present invention is a laminated film in which an adhesive film containing an adhesive composition is formed on the surface of a support, and the support is a surface. The residual adhesion C force is ¾0% or more.
5  Five
[0032] 支持体は、その表面の残留接着率 Cが 80%以上であれば特に限定されない。  [0032] The support is not particularly limited as long as the residual adhesion C on the surface thereof is 80% or more.
5  Five
[0033] 支持体の具体例としては、例えば、ポリエチレンテレフタレートフィルム、ポリエチレ ンナフタレートフィルム、ポリエチレンイソフタレートフィルム、ポリブチレンテレフタレー トフイルム、ポリオレフイン系フィルム、ポリアセテートフィルム、ポリカーボネートフィル ム、ポリフエ-レンサルファイドフィルム、ポリアミドフィルム、エチレン—酢酸ビュル共 重合体フィルム、ポリ塩化ビュルフィルム、ポリ塩化ビ-リデンフィルム、合成ゴム系フ イルム、液晶ポリマーフィルムが挙げられる。これらは必要に応じて、フィルム表面に コロナ放電処理、アンカーコート処理、帯電防止処理などが施されていてもよい。  [0033] Specific examples of the support include, for example, a polyethylene terephthalate film, a polyethylene naphthalate film, a polyethylene isophthalate film, a polybutylene terephthalate film, a polyolefin-based film, a polyacetate film, a polycarbonate film, and a polyphenylene sulfide film. , Polyamide film, ethylene-butyl acetate copolymer film, polychlorinated bure film, poly (vinylidene chloride) film, synthetic rubber film, and liquid crystal polymer film. If necessary, the film surface may be subjected to corona discharge treatment, anchor coating treatment, antistatic treatment or the like.
[0034] 支持体は、 80%以上の残留接着率 Cを有すると同時に、その表面上に形成され  [0034] The support has a residual adhesion C of 80% or more and at the same time is formed on the surface thereof.
5  Five
た接着フィルムを容易に剥離除去できるように、その表面に剥離処理剤をコーティン グしてなるものであってもよい。剥離処理剤としては、例えば、シリコーン榭脂、シリコ ーンと有機系榭脂との共重合体、アルキッド榭脂、アミノアルキッド榭脂、長鎖アルキ ル基を有する榭脂、フルォロアルキル基を有する榭脂、セラック榭脂が挙げられる。こ れらの中で、剥離処理剤の支持体から接着フィルムへの移行をより有効に防止する 観点から、シリコーン榭脂を主成分とする剥離処理剤以外の剥離処理剤が好ま ヽ  The surface of the adhesive film may be coated with a release treatment so that the adhesive film can be easily removed. Examples of the release treatment agent include silicone resin, copolymer of silicone and organic resin, alkyd resin, amino alkyd resin, resin having a long-chain alkyl group, and resin having a fluoroalkyl group. Fat and shellac rosin are listed. Among these, from the viewpoint of more effectively preventing the release treatment agent from transferring from the support to the adhesive film, release treatment agents other than the release treatment agent mainly composed of silicone resin are preferred.
[0035] 支持体の厚みは特に制限されるものではな 、。ただし、積層フィルムの保管や使用 時の利便性などを考慮すると、支持体の厚みは 4〜200 /ζ πιであると好ましい。さらに は、積層フィルムの材料コストや生産性を考慮すると、支持体の厚みは 15〜75 m であることがより好ましい。 [0035] The thickness of the support is not particularly limited. However, storage and use of laminated film Considering the convenience of time, the thickness of the support is preferably 4 to 200 / ζ πι. Furthermore, considering the material cost and productivity of the laminated film, the thickness of the support is more preferably 15 to 75 m.
[0036] 支持体は、上述の本発明に係る積層フィルム用支持体の評価方法により評価され 、本発明に係る積層フィルム用支持体の選別方法により選択されたものが採用される と好ましい。支持体の選別方法では、例えば、材質や製法の異なる複数種の支持体 を準備し、それらの支持体のうち、表面の残留接着率 Cが 80%以上であるもののみ [0036] The support is preferably evaluated by the above-described method for evaluating a laminated film support according to the present invention and selected by the method for selecting a laminated film support according to the present invention. In the method of selecting a support, for example, multiple types of supports with different materials and manufacturing methods are prepared, and only those whose surface residual adhesion ratio C is 80% or more are prepared.
5  Five
を選択し、表面の残留接着率 Cが 80%未満の支持体を除去する。このようにして選  And remove the support with a residual surface adhesion C of less than 80%. In this way
5  Five
択された支持体のみを採用して積層フィルムを作製すると、接着フィルムの接続信頼 性が向上し、この接着フィルムを用いて形成された回路の接続構造や半導体装置の 歩留まりが十分に高くなる。  When a laminated film is produced using only the selected support, the connection reliability of the adhesive film is improved, and the circuit connection structure formed using the adhesive film and the yield of the semiconductor device are sufficiently increased.
[0037] 支持体の残留接着率 Cを 80%以上にするためには、例えば、支持体表面に低分 [0037] In order to increase the residual adhesion ratio C of the support to 80% or more, for example, the support surface has a low content.
5  Five
子量成分を極力存在させず、高分子量成分を優先的に存在させたり、剥離性処理 剤成分の分子の一部が脱落し難くなるように制御したりする手法が挙げられる。高分 子量成分としては、例えばアミノアルキッド榭脂が挙げられる。  Examples include a method in which a low molecular weight component is not present as much as possible, a high molecular weight component is preferentially present, and control is performed so that a part of the molecule of the releasable treatment agent component does not easily fall off. Examples of the high molecular weight component include amino alkyd resin.
[0038] 接着フィルムとしては、例えば、接着剤組成物をフィルム状に成形してなるものであ ればよい。接着剤組成物は、好適には、回路電極間等の電子材料間の接続状態を 保持するための重合性榭脂成分等の重合性ィ匕合物、その重合性ィ匕合物を硬化させ るための硬化剤である重合開始剤、並びに、接着剤組成物にフィルム形成性を付与 するためのフィルム形成成分を含むことが好ま U、。  [0038] The adhesive film may be, for example, one obtained by forming an adhesive composition into a film. The adhesive composition preferably cures a polymerizable compound such as a polymerizable resin component for maintaining a connection state between electronic materials such as circuit electrodes, and the polymerizable compound. U, which preferably includes a polymerization initiator that is a curing agent for the purpose, and a film-forming component for imparting film-forming properties to the adhesive composition.
[0039] 重合性化合物は、積層フィルムを用いる際の環境に応じて設定される温度範囲で 硬化可能な熱硬化性化合物、ある ヽは積層フィルムを用いる際の環境に応じて用い られる光の照射により硬化可能な光硬化性化合物などの硬化性化合物であればよ い。硬化性化合物としては、低温速硬化性に有利なラジカル重合性ィ匕合物が好まし い。  [0039] The polymerizable compound is a thermosetting compound that can be cured in a temperature range that is set according to the environment when the laminated film is used, or a light irradiation that is used depending on the environment when the laminated film is used. It may be a curable compound such as a photocurable compound that can be cured by the above method. As the curable compound, a radical polymerizable compound that is advantageous for low-temperature rapid curing is preferable.
[0040] ラジカル重合性化合物は、ラジカルにより重合する官能基を有する化合物である。  [0040] The radical polymerizable compound is a compound having a functional group that is polymerized by radicals.
ラジカル重合性ィ匕合物としては、例えば、(メタ)アタリレートイ匕合物、マレイミドィ匕合物 、シトラコンイミドィ匕合物、ナジイミド化合物が挙げられる。これらは、 1種を単独で又は 2種以上を組み合わせて用いられる。また、ラジカル重合性ィ匕合物は、モノマー、又 はオリゴマーのいずれの状態でも使用することができ、モノマーとオリゴマーとを混合 して使用してちょい。 Examples of the radically polymerizable compound include (meth) atalytoi compound, maleimide compound, citraconimid compound, and nadiimide compound. These are one kind alone or Used in combination of two or more. In addition, the radical polymerizable compound can be used in either a monomer or oligomer state, and the monomer and oligomer may be mixed and used.
[0041] (メタ)アタリレートイ匕合物としては、例えば、メチル (メタ)アタリレート、ェチル (メタ) アタリレート、イソプロピル (メタ)アタリレート、イソブチル (メタ)アタリレート、ェテレング リコールジ (メタ)アタリレート、ジエチレングリコールジ (メタ)アタリレート、トリメチロー ルプロパントリ(メタ)アタリレート、テトラメチレングリコールテトラ (メタ)アタリレート、 2 —ヒドロキシ一 1, 3 ジ (メタ)アタリロキシプロパン、 2, 2 ビス [4— ( (メタ)アタリロキ シメトキシ)フエ-ル]プロパン、 2, 2 ビス [4— ( (メタ)アタリロキシエトキシ)フエ-ル ]プロパン、ジシクロペンテ-ル (メタ)アタリレートトリシクロデ力-ル (メタ)アタリレート 、トリス((メタ)アタリ口キシェチル)イソシァヌレート、ウレタン (メタ)アタリレート、イソシ ァヌール酸エチレンォキシド変性ジ (メタ)アタリレートが挙げられる。これらは、 1種を 単独で又は 2種以上を組み合わせて用いられる。上記 (メタ)アタリレートイ匕合物をラ ジカル重合させることで、(メタ)アクリル榭脂が得られる。  [0041] Examples of (meth) ataretoy compounds include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, isobutyl (meth) acrylate, and heterangel recall (meth). Atalylate, diethylene glycol di (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylene glycol tetra (meth) acrylate, 2 —hydroxy mono 1,3 di (meth) talyloxy propane, 2, 2 bis [4 — (((Meth) Ataryloxymethoxy) phenol] propane, 2, 2 bis [4— (((Meth) Atalyloxyethoxy) phenol] propane, dicyclopentayl (meth) acrylate tricyclodehydryl ( (Meta) Atalylate, Tris ((Meth) Atari Mouth Kichetil) Isocyanurate, Urethane (Meta ) Atarylate, isocyanuric acid ethylene oxide-modified di (meth) acrylate. These may be used alone or in combination of two or more. A (meth) acrylic resin can be obtained by radical polymerization of the above (meth) attale toy compound.
[0042] マレイミドィ匕合物は、マレイミド基を分子内に少なくとも 1つ有する化合物である。マ レイミド化合物としては、例えば、フエ-ルマレイミド、 1ーメチルー 2, 4 ビスマレイミ ドベンゼン、 N, N,一m—フエ-レンビスマレイミド、 N, N,一p フエ-レンビスマレ イミド、 N, N,—4, 4—ビフエ-レンビスマレイミド、 N, N,—4, 4— (3, 3—ジメチル ビフエ-レン)ビスマレイミド、 N, N,一 4, 4— (3, 3—ジメチルジフエ-ルメタン)ビス マレイミド、 N, N,一4, 4— (3, 3—ジェチルジフエ-ルメタン)ビスマレイミド、 N, N, —4, 4ージフエニルメタンビスマレイミド、 N, N,一4, 4ージフエニルプロパンビスマ レイミド、 N, N,一 4, 4—ジフエ-ルエーテルビスマレイミド、 N, N,一 4, 4—ジフエ ニルスルホンビスマレイミド、 2, 2 ビス(4— (4 マレイミドフエノキシ)フエニル)プロ パン、 2, 2 ビス(3 s ブチル 3, 4— (4 マレイミドフエノキシ)フエ-ル)プロパ ン、 1, 1—ビス(4— (4 マレイミドフエノキシ)フエ-ル)デカン、 4, 4,一シクロへキシ リデン一ビス(1— (4—マレイミドフエノキシ)フエノキシ) 2—シクロへキシルベンゼ ン、 2, 2 ビス(4一(4 マレイミドフエノキシ)フエ-ル)へキサフルォロプロパンが挙 げられる。これらは、 1種を単独で又は 2種以上を組み合わせて用いられる。 [0043] シトラコンイミドィ匕合物は、シトラコンイミド基を分子内に少なくとも 1つ有する化合物 である。シトラコンイミドィ匕合物としては、例えば、フエ-ルシトラコンイミド、 1—メチル - 2, 4 ビスシトラコンイミドベンゼン、 N, N,一 m—フエ二レンビスシトラコンイミド、 N, N,一p フエ-レンビスシトラコンイミド、 N, N,一 4, 4—ビフエ-レンビスシトラコ ンイミド、 N, N,一4, 4— (3, 3—ジメチルビフエ-レン)ビスシトラコンイミド、 N, N, —4, 4— (3, 3—ジメチルジフエ-ルメタン)ビスシトラコンイミド、 N, N,一4, 4— (3, 3—ジェチルジフエ-ルメタン)ビスシトラコンイミド、 N, Ν'— 4, 4—ジフエ-ルメタン ビスシトラコンイミド、 Ν, Ν,一4, 4ージフエニノレプロノ ンビスシトラコンイミド、 Ν, Ν, —4, 4—ジフエ-ルエーテルビスシトラコンイミド、 Ν, Ν,— 4, 4—ジフエ-ルスルホ ンビスシトラコンイミド、 2, 2 ビス(4— (4 シトラコンイミドフエノキシ)フエ-ル)プロ パン、 2, 2 ビス(3 s ブチル 3, 4— (4 シトラコンイミドフエノキシ)フエ-ル) プロパン、 1, 1—ビス(4— (4 シトラコンイミドフエノキシ)フエ-ル)デカン、 4, 4,一 シクロへキシリデン一ビス(1— (4—シトラコンイミドフエノキシ)フエノキシ) 2—シクロ へキシルベンゼン、 2, 2 ビス(4— (4 シトラコンイミドフエノキシ)フエ-ル)へキサ フルォロプロパンが挙げられる。これらは、 1種を単独で又は 2種以上を組み合わせ て用いられる。 [0042] A maleimide compound is a compound having at least one maleimide group in the molecule. Examples of maleimide compounds include: phenol maleimide, 1-methyl-2,4 bismaleimide benzene, N, N, 1m-phenol bismaleimide, N, N, 1p phenolene bismaleimide, N, N, -4 , 4-bi-bilenene bismaleimide, N, N, —4, 4— (3, 3-dimethylbiphenylene) bismaleimide, N, N, 1, 4, 4- (3, 3-dimethyldiphenylmethane) bis Maleimide, N, N, 1,4,4- (3,3-Jetyldiphenylmethane) bismaleimide, N, N, —4,4-diphenylmethane bismaleimide, N, N, 1,4,4-diphenylpropane Bismaleimide, N, N, 1,4,4-diphenyl ether bismaleimide, N, N, 1,4,4-diphenylsulfone bismaleimide, 2,2bis (4- (4 maleimidephenoxy) phenyl) pro Bread, 2, 2 bis (3 s butyl 3, 4— (4 maleimide phenoxy) Ethyl), 1,1-bis (4- (4 maleimidophenoxy) phenol) decane, 4,4, monocyclohexylidene monobis (1- (4-maleimidophenoxy) (Phenoxy) 2-cyclohexylbenzen, 2,2 bis (4-maleimidephenoxy) hexafluoropropane. These may be used alone or in combination of two or more. [0043] A citraconimide compound is a compound having at least one citraconimide group in the molecule. Citraconimide compounds include, for example, phenol citraconimide, 1-methyl-2,4 biscitraconimide benzene, N, N, 1 m-phenylene biscitraconimide, N, N, 1p -Lenbiscitraconimide, N, N, 1,4,4-biphenylene biscitraconimide, N, N, 4,4— (3,3-dimethylbiphenyl) biscitraconimide, N, N, —4,4 — (3,3-Dimethyldiphenylmethane) biscitraconimide, N, N, 4,4— (3,3-Detyldiphenylmethane) biscitraconeimide, N, Ν'— 4, 4-Diphenylmethane biscitracon Imido, Ν, Ν, 1,4-Diphenylenopropronone biscitraconimide, Ν, Ν, —4, 4-Diphenyl ether biscitraconimide, Ν, Ν, — 4, 4-Diphenylsulfonbis Citraconimide, 2, 2 screw (4— (4 Citracon Imidophene) phenol) propan, 2, 2 bis (3 s butyl 3, 4— (4 citraconimide phenoxy) phenol) Propane, 1, 1—bis (4— (4 citracone imide phenol) ) Phenol) Decane, 4, 4, 1 Cyclohexylidene monobis (1— (4-Citraconimidephenoxy) phenoxy) 2-Cyclohexylbenzene, 2, 2 Bis (4— (4 Citraconimide) Enoxy) phenol) hexafluoropropane. These may be used alone or in combinations of two or more.
[0044] ナジイミドィ匕合物は、ナジイミド基を分子内に少なくとも 1つ有する化合物である。ナ ジイミドィ匕合物としては、例えば、フエ-ルナジイミド、 1—メチル 2, 4 ビスナジイミ ドベンゼン、 Ν, N,一m—フエ-レンビスナジイミド、 N, N,一p フエ-レンビスナジ イミド、 N, N,—4, 4—ビフエ-レンビスナジイミド、 N, N,—4, 4— (3, 3—ジメチル ビフエ二レン)ビスナジイミド、 N, N,一 4, 4— (3, 3—ジメチルジフエ-ルメタン)ビス ナジイミド、 N, N,—4, 4— (3, 3—ジェチルジフエ-ルメタン)ビスナジイミド、 N, N ,一4, 4—ジフエ-ルメタンビスナジイミド、 N, N,一 4, 4—ジフエ-ルプロパンビスナ ジイミド、 N, N,—4, 4ージフエ-ルエーテルビスナジイミド、 N, N,—4, 4ージフエ ニルスルホンビスナジイミド、 2, 2 ビス(4— (4 ナジイミドフエノキシ)フエ-ル)プロ パン、 2, 2 ビス(3 s ブチル 3, 4— (4 ナジイミドフエノキシ)フエ-ル)プロパ ン、 1, 1—ビス(4— (4 ナジイミドフエノキシ)フエ-ル)デカン、 4, 4,一シクロへキ シリデン一ビス(1— (4 ナジイミドフエノキシ)フエノキシ) 2 シクロへキシルベン ゼン、 2, 2—ビス(4— (4—ナジイミドフエノキシ)フエ-ル)へキサフルォロプロパンが 挙げられる。これらは、 1種を単独で又は 2種以上を組み合わせて用いられる。 [0044] A nadiimide compound is a compound having at least one nadiimide group in the molecule. Nadiimide compounds include, for example, ferronadiimide, 1-methyl 2,4 bisnadiimidebenzene, 一, N, 1m-phenolene bisnadiimide, N, N, 1p phenylenediamine imide, N, N , —4, 4-Bi-phenylene bisnadiimide, N, N, —4, 4— (3, 3-dimethylbiphenylene) bisnadiimide, N, N, 1, 4, 4— (3, 3-dimethyldiphenylmethane) ) Bisnadiimide, N, N, —4, 4— (3, 3—Jetyldiphenylmethane) Bisnadiimide, N, N, 1,4,4-Diphenylmethane bisnadiimide, N, N, 1,4,4—Diphenyl -Lupropane bisnadiimide, N, N, —4,4-diphenyl ether bisnadiimide, N, N, —4,4-diphenylsulfone bisnadiimide, 2,2 bis (4- (4 nadiimidephenoxy) phenol -Le) propan, 2, 2 bis (3 s butyl 3, 4— (4 nadiimidephenoxy) -L) propan, 1,1-bis (4- (4 nadiimidephenoxy) phenol) decane, 4,4,1 cyclohexylidene monobis (1— (4 nadiimidephenoxy) Phenoxy) 2 cyclohexylben And 2,2-bis (4- (4-nadiimidephenoxy) phenol) hexafluoropropane. These may be used alone or in combination of two or more.
[0045] 重合開始剤は、上記重合性化合物による重合反応を開始可能な化合物であれば よぐ重合性ィ匕合物としてラジカル重合性ィ匕合物を用いる場合、重合開始剤としてラ ジカル重合開始剤を用いればよ 、。 [0045] The polymerization initiator is a compound that can initiate a polymerization reaction with the polymerizable compound. When a radical polymerizable compound is used as the polymerizable compound, radical polymerization is used as the polymerization initiator. Use an initiator.
[0046] ラジカル重合開始剤は、光照射及び Z又は加熱によりラジカルを発生する化合物 であれば特に制限はない。力かるラジカル重合開始剤としては、 150〜750nmの光 照射及び Z又は 80〜200°Cの加熱によりラジカルを発生する化合物が好ましぐ具 体的には、過酸化物、ァゾィ匕合物等が好ましい。これらは、目的とする接続温度、接 続時間、保存安定性等を考慮し選択される。  [0046] The radical polymerization initiator is not particularly limited as long as it is a compound that generates radicals by light irradiation and Z or heating. Preferred radical polymerization initiators are compounds that generate radicals upon irradiation with light at 150 to 750 nm and heating at Z or 80 to 200 ° C. Specifically, peroxides, azo compounds, etc. Is preferred. These are selected in consideration of the target connection temperature, connection time, storage stability, etc.
[0047] 過酸ィ匕物としては、高反応性と保存安定性の点から、有機過酸化物が好ま 、。同 様の観点から、有機過酸化物の中では、半減期 10時間の温度が 40°C以上、かつ半 減期 1分の温度が 200°C以下の有機過酸ィ匕物が好ましぐ半減期 10時間の温度が 5 0°C以上、かつ半減期 1分の温度が 180°C以下の有機過酸ィ匕物が特に好ましい。な お、接続時間を 10秒以下とする場合、十分な反応率を得るためのラジカル重合開始 剤の配合量は、接着剤組成物の固形分全量を基準として、 0. 1〜20質量%が好ま しぐ 2〜 15質量%が特に好ましい。  [0047] The peroxide is preferably an organic peroxide from the viewpoint of high reactivity and storage stability. From the same viewpoint, among organic peroxides, organic peroxides having a half-life of 10 hours at a temperature of 40 ° C or higher and a half-life of 1 minute at a temperature of 200 ° C or lower are preferred. Particularly preferred are organic peroxides having a half-life of 10 hours at a temperature of 50 ° C or higher and a half-life of 1 minute at a temperature of 180 ° C or lower. When the connection time is 10 seconds or less, the amount of the radical polymerization initiator for obtaining a sufficient reaction rate is 0.1 to 20% by mass based on the total solid content of the adhesive composition. The preferred range is 2 to 15% by mass.
[0048] 有機過酸ィ匕物としては、具体的には、ジァシルバーオキサイド、パーォキシジカー ボネート、パーォキシエステル、パーォキシケタール、ジアルキルパーオキサイド、ノヽ イド口パーオキサイド、シリルパーオキサイドが挙げられる。これらの中でも、パーォキ シエステル、ジアルキルパーオキサイド、ハイド口パーオキサイド、シリルパーォキサイ ドは、開始剤中の塩素イオンや有機酸の濃度が 5000ppm以下であり、加熱分解後 に発生する有機酸が少なぐ回路部材の回路電極等、金属部材の腐食をより抑える ことができるため特に好ま 、。  [0048] Specific examples of the organic peroxides include disilver oxide, peroxydicarbonate, peroxyester, peroxyketal, dialkyl peroxide, nanomouth peroxide, and silyl peroxide. It is done. Among these, peroxide esters, dialkyl peroxides, hydride peroxides, and silyl peroxides have a concentration of chlorine ions and organic acids in the initiator of 5000 ppm or less, and produce less organic acids after thermal decomposition. This is especially preferred because it can further reduce the corrosion of metal parts such as circuit electrodes.
[0049] ジァシルバーオキサイドとしては、例えば、イソブチルパーオキサイド、 2, 4ージクロ 口ベンゾィルパーオキサイド、 3, 5, 5—トリメチルへキサノィルパーオキサイド、ォクタ ノィルパーオキサイド、ラウロイルパーオキサイド、ステアロイルパーオキサイド、スクシ ニックパーオキサイド、ベンゾィルパーォキシトルエン、ベンゾィルパーオキサイドが 挙げられる。 [0049] Examples of disilver oxide include isobutyl peroxide, 2,4-dichlorobenzoyl peroxide, 3, 5, 5-trimethylhexanoyl peroxide, octane peroxide, lauroyl peroxide, stearoyl peroxide. Oxides, succinic peroxides, benzoylperoxytoluene, benzoyl peroxide Can be mentioned.
[0050] パーォキシジカーボネートとしては、例えば、ジー n プロピノレバーオキシジカーボ ネート、ジイソプロピルパーォキシジカーボネート、ビス(4—tーブチルシクロへキシ ル)パーォキシジカーボネート、ジー 2—エトキシメトキシバーオキシジカーボネート、 ジ(2—ェチルへキシルバーォキシ)ジカーボネート、ジメトキシブチルバ一才キシジ カーボネート、ジ(3—メチルー 3—メトキシブチルバ一才キシ)ジカーボネートが挙げ られる。  [0050] Examples of peroxydicarbonate include di-n-propinoliver oxydicarbonate, diisopropyl peroxydicarbonate, bis (4-tert-butylcyclohexyl) peroxydicarbonate, and di-2-ethoxy. Examples include methoxy baroxy dicarbonate, di (2-ethylhexyloxy) dicarbonate, dimethoxybutyl dioxygen dicarbonate, and di (3-methyl-3-methoxybutyl dioxy) dicarbonate.
[0051] パーォキシエステルとしては、例えば、タミルパーォキシネオデカノエート、 1, 1, 3 , 3—テトラメチルブチルパーォキシネオデカノエート、 1ーシクロへキシルー 1ーメチ ルェチルパーォキシノエデカノエート、 t一へキシルバーォキシネオデカノエート、 t ブチルパーォキシビバレート、 1, 1, 3, 3—テトラメチルブチルパーォキシ 2 ェ チルへキサノネート、 2, 5 ジメチルー 2, 5 ジ(2 ェチルへキサノィルパーォキシ )へキサン、 1ーシクロへキシルー 1 メチルェチルパーォキシ 2—ェチルへキサノ ネート、 t一へキシルバーォキシ 2—ェチルへキサノネート、 t ブチルパーォキシ 2—ェチルへキサノネート、 t—ブチルパーォキシイソブチレート、 1, 1 ビス(t— ブチルパーォキシ)シクロへキサン、 t一へキシルバーォキシイソプロピルモノカーボ ネート、 t—ブチルパーォキシ 3, 5, 5—トリメチルへキサノネート、 t—ブチルパー ォキシラウレート、 2, 5 ジメチルー 2, 5 ジ(m—トルオイルパーォキシ)へキサン、 t ブチノレパーォキシイソプロピノレモノカーボネート、 tーブチノレパーォキシ 2—ェ チルへキシルモノカーボネート、 t一へキシルパーォキシベンゾエート、 tーブチノレパ 一ォキシアセテート, n—ブチルー 4, 4 ビス(t ブチルパーォキシ)バレレートが 挙げられる。  [0051] Examples of peroxyesters include Tamil peroxyneodecanoate, 1,1,3,3-tetramethylbutylperoxyneodecanoate, 1-cyclohexylene 1-methylethylperpero Xinoedecanoate, t-hexoxyloxyneodecanoate, t-butylperoxybivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2 , 5 Di (2-ethylhexylperoxy) hexane, 1-cyclohexylene 1-methylethylperoxy-2-ethylhexanate, t-hexyloxy-2-ethylhexanoate, t-butylperoxy-2-ethyl Xanonate, t-butylperoxyisobutyrate, 1,1 bis (t-butylperoxy) cyclohexane, t-hexyloxyisopropyl Carbonate, t-butylperoxy 3,5,5-trimethylhexanoate, t-butylperoxylaurate, 2,5 dimethyl-2,5 di (m-toluoylperoxy) hexane, t-butinoreperoxyisopropinolemono And carbonate, tert-butylenoperoxy 2-ethylhexyl monocarbonate, tert-hexylperoxybenzoate, tert-butylenoperoxyacetate, n-butyl-4,4 bis (t-butylperoxy) valerate.
[0052] パーォキシケタールとしては、例えば、 1, 1 ビス(t一へキシルバーォキシ) 3, 3, 5 トリメチルシクロへキサン、 1, 1—ビス(t—へキシルバーォキシ)シクロへキサ ン、 1, 1—ビス(t—ブチルパーォキシ)一3, 3, 5 トリメチルシクロへキサン、 1, 1— (t ブチルパーォキシ)シクロドデカン、 2, 2—ビス(t ブチルパーォキシ)デカンが 挙げられる。  [0052] As peroxyketals, for example, 1, 1 bis (t-hexyloxy) 3, 3, 5 trimethylcyclohexane, 1,1-bis (t-hexyloxy) cyclohexane, 1, Examples include 1-bis (t-butylperoxy) 1,3,3,5 trimethylcyclohexane, 1,1- (t-butylperoxy) cyclododecane, and 2,2-bis (t-butylperoxy) decane.
[0053] ジアルキルパーオキサイドとしては、例えば、 α , α , 一ビス(t一ブチルパーォキシ )ジイソプロピルベンゼン、ジクミルパーオキサイド、 2, 5 ジメチルー 2, 5 ジ(t— ブチルパーォキシ)へキサン、 t ブチルタミルパーオキサイドが挙げられる。 [0053] Examples of the dialkyl peroxide include α, α, monobis (t-butylperoxy). ) Diisopropylbenzene, dicumyl peroxide, 2,5 dimethyl-2,5 di (t-butylperoxy) hexane, t-butyltamyl peroxide.
[0054] ハイド口パーオキサイドとしては、例えば、ジイソプロピルベンゼンハイド口パーォキ サイド、タメンノヽイド口パーオキサイドが挙げられる。  [0054] Examples of the hydride peroxide include diisopropylbenzene hydride peroxide and tamenoid oxid peroxide.
[0055] シリルパーオキサイドとしては、 tーブチルトリメチルシリルパーオキサイド、ビス (t- ブチル)ジメチルシリルパーオキサイド、 t—ブチルトリビュルシリルパーオキサイド、ビ ス(t ブチル)ジビュルシリルパーオキサイド、トリス(t ブチル)ビュルシリルバーオ キサイド、 tーブチルトリアリルシリルパーオキサイド、ビス(tーブチル)ジァリルシリル パーオキサイド、トリス (t—ブチル)ァリルシリルパーオキサイドが挙げられる。  [0055] Examples of silyl peroxides include t-butyltrimethylsilyl peroxide, bis (t-butyl) dimethylsilyl peroxide, t-butyltributylsilyl peroxide, bis (tbutyl) dibulylsilyl peroxide, tris ( Examples thereof include t-butyl) butylsilyl peroxide, t-butyltriallylsilyl peroxide, bis (t-butyl) diallylsilyl peroxide, and tris (t-butyl) arylsilyl peroxide.
[0056] これらのラジカル重合開始剤は、 1種を単独で又は 2種以上を混合して使用するこ とができ、分解促進剤、抑制剤等を混合して用いてもよい。  [0056] These radical polymerization initiators may be used singly or in combination of two or more, and may be used in combination with a decomposition accelerator, an inhibitor and the like.
[0057] さらには、これらのラジカル重合開始剤をポリウレタン系、ポリエステル系の高分子 物質等で被覆してマイクロカプセルィ匕したものは、可使時間が延長されるために好ま しい。  [0057] Further, those encapsulating these radical polymerization initiators with a polyurethane-based or polyester-based polymeric substance or the like and being microcapsulated are preferable because the pot life is extended.
[0058] また、接着フィルムが回路接続材料に使用される場合には、回路部材の回路電極 の腐食を抑えるため、ラジカル重合開始剤中に含有される塩素イオンや有機酸の濃 度は 5000ppm以下であることが好ましい。さらに、加熱分解後に発生する有機酸が 少ないラジカル重合開始剤がより好ましい。また、接着フィルムの硬化後の安定性が 向上することから、室温(25°C)及び常圧下で 24時間の開放放置後に 20質量%以 上の質量保持率を有することが好まし ヽ。  [0058] When an adhesive film is used as a circuit connecting material, the concentration of chlorine ions and organic acids contained in the radical polymerization initiator is 5000 ppm or less in order to suppress corrosion of circuit electrodes of circuit members. It is preferable that Furthermore, a radical polymerization initiator that generates less organic acid after thermal decomposition is more preferred. In addition, since the stability of the adhesive film after curing is improved, it is preferable to have a mass retention of 20% by mass or more after being left open at room temperature (25 ° C.) and normal pressure for 24 hours.
[0059] また、必要に応じて、接着剤組成物は、ノ、イドロキノン、メチルエーテルノヽイド口キノ ン等のラジカル重合禁止剤を硬化性が損なわれな 、範囲で含有してもよ 、。  [0059] Further, if necessary, the adhesive composition may contain a radical polymerization inhibitor such as NO, idroquinone, methyl ether nodule quinone, etc. in a range that does not impair the curability.
[0060] 接着剤組成物は、ラジカル重合性化合物以外の熱硬化性榭脂を、重合性化合物 として含んでもよい。このような熱硬化性榭脂としては、エポキシ榭脂が挙げられる。 エポキシ榭脂としては、ビスフエノール A型エポキシ榭脂、ビスフエノール F型ェポキ シ榭脂、ビスフエノール S型エポキシ榭脂、フエノールノボラック型エポキシ榭脂、タレ ゾールノボラック型エポキシ榭脂、ビスフエノール Aノボラック型エポキシ榭脂、ビスフ ェノール Fノボラック型エポキシ榭脂、脂環式エポキシ榭脂、グリシジルエステル型ェ ポキシ榭月旨、グリシジノレアミン型エポキシ榭月旨、ヒダントイン型エポキシ榭脂、イソシァ ヌレート型エポキシ榭脂、脂肪族鎖状エポキシ榭脂等が挙げられる。これらのェポキ シ榭脂は、ハロゲンィ匕されていてもよぐ水素添加されていてもよい。これらのェポキ シ榭脂は、 1種を単独で又は 2種以上を組み合わせて用いられる。 [0060] The adhesive composition may contain a thermosetting resin other than the radical polymerizable compound as the polymerizable compound. An example of such thermosetting resin is epoxy resin. Epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, talesole novolak type epoxy resin, bisphenol A novolak. Type epoxy resin, bisphenol F novolac type epoxy resin, alicyclic epoxy resin, glycidyl ester type Poxy soy sauce, glycidinoleamine type epoxy soy sauce, hydantoin type epoxy resin, isocyanurate type epoxy resin, aliphatic chain epoxy resin, and the like. These epoxy resins may be halogenated or hydrogenated. These epoxy resins can be used singly or in combination of two or more.
[0061] また、上記エポキシ榭脂の硬化剤としては、通常のエポキシ榭脂の硬化剤として使 用されているものが使用できる。具体的には、アミン系硬化剤、フ ノール系硬化剤、 酸無水物系硬化剤、イミダゾール系硬化剤、ジシアンジアミド等が挙げられる。さらに 、硬化促進剤として通常使用されている 3級ァミン類、有機リン系化合物を適宜使用 してちよい。 [0061] Further, as the curing agent for the epoxy resin, those used as an ordinary epoxy resin curing agent can be used. Specific examples include amine-based curing agents, phenol-based curing agents, acid anhydride-based curing agents, imidazole-based curing agents, and dicyandiamide. Furthermore, tertiary amines and organic phosphorus compounds that are usually used as curing accelerators may be used as appropriate.
[0062] また、エポキシ榭脂を反応させる方法として、上記硬化剤を使用する以外に、スル ホ -ゥム塩、ョードニゥム塩等を使用して、カチオン重合させてもよい。  [0062] Further, as a method of reacting the epoxy resin, in addition to using the above-described curing agent, cationic polymerization may be performed using a sulfone salt, a iodine salt, or the like.
[0063] フィルム形成成分は、接着フィルムのフィルム形成性をより良好にする成分であり、 接着性、及び Z又は硬化時の応力緩和性を向上させることもできる。フィルム形成成 分としては、フィルム形成性の高分子が挙げられる。フィルム形成性の高分子として は、例えば、ポリビュルブチラール榭脂、ポリビュルホルマール榭脂、ポリエステル榭 脂、ポリアミド榭脂、ポリイミド榭脂、キシレン榭脂、フエノキシ榭脂、ポリウレタン榭脂、 尿素樹脂が挙げられる。  [0063] The film-forming component is a component that makes the film-forming property of the adhesive film better, and can also improve the adhesiveness and the stress relaxation property during Z or curing. Examples of the film-forming component include a film-forming polymer. Examples of film-forming polymers include polybutyral resin, polybulal formal resin, polyester resin, polyamide resin, polyimide resin, xylene resin, phenoxy resin, polyurethane resin, and urea resin. Can be mentioned.
[0064] フィルム形成成分は、その重量平均分子量が 10000〜10000000であると好まし い。また、これらの高分子をラジカル重合性の官能基で変性したものも用いることが できる。これにより、接着フィルムの耐熱性が向上する。  [0064] The film-forming component preferably has a weight average molecular weight of 1,000 to 10,000,000. In addition, those obtained by modifying these polymers with radically polymerizable functional groups can also be used. Thereby, the heat resistance of an adhesive film improves.
[0065] フィルム形成成分の接着剤組成物中の配合割合は、接着剤組成物の総量に対し て 2〜80質量%であると好ましぐ 5〜70質量%であるとより好ましぐ 10〜60質量 %であると特に好ましい。フィルム形成成分の配合割合が 2質量%未満であると、応 力緩和性や接着性が低下する傾向にあり、 80質量%を超えると、流動性が低下する 傾向にある。  [0065] The blending ratio of the film-forming component in the adhesive composition is preferably 2 to 80% by mass with respect to the total amount of the adhesive composition, and more preferably 5 to 70% by mass. It is especially preferable that it is -60 mass%. If the blending ratio of the film-forming component is less than 2% by mass, the stress relaxation property and adhesiveness tend to be lowered, and if it exceeds 80% by mass, the fluidity tends to be lowered.
[0066] 本発明の接着剤組成物は導電性粒子を含有すると好ましい。これにより、接着フィ ルムを回路電極等の接続に用いた場合、更に優れた接続信頼性を有することが可 能となり、異方導電性を示すようにもなる。導電性粒子は、電気的接続が可能となる ような導電性を有していれば特に限定されない。導電性粒子としては、例えば、 Au、 Ag、 Ni、 Cu、 Co及びはんだなどの合金を含む金属粒子、並びにカーボンが挙げら れる。また、導電性粒子力 非導電性のガラス、セラミックス、プラスチックなどの核と なる粒子を、上記金属等の導電性物質を含む膜、あるいは上記金属等の導電性物 質を含む粒子で被覆した多層のものであってもよい。被覆する膜の厚さは、より確実 な導電性を得るために、 10nm以上であることが好ま U、。 [0066] The adhesive composition of the present invention preferably contains conductive particles. As a result, when the adhesive film is used for connecting circuit electrodes or the like, it becomes possible to have further excellent connection reliability and to exhibit anisotropic conductivity. Conductive particles enable electrical connection If it has such electroconductivity, it will not specifically limit. Examples of the conductive particles include metal particles including alloys such as Au, Ag, Ni, Cu, Co, and solder, and carbon. Conductive particle force Multi-layers in which core particles such as non-conductive glass, ceramics, and plastics are coated with a film containing a conductive material such as the metal or a particle containing a conductive material such as the metal. It may be. The thickness of the coating film is preferably 10 nm or more in order to obtain more reliable conductivity.
[0067] 力かる多層の導電性粒子、あるいは熱溶融性の金属粒子を導電性粒子として用い た場合、その導電性粒子は加熱加圧により変形する変形性を有する。そのため、か かる導電性粒子を含有する接着剤組成物を用いて、回路間を接続する際、回路と導 電性粒子との接触面積が増加し、複数の電極間の厚みのばらつきを吸収できるので 、信頼性向上の観点力も好ましい。  When powerful multi-layered conductive particles or heat-meltable metal particles are used as the conductive particles, the conductive particles have a deformability that deforms when heated and pressurized. Therefore, when connecting the circuits using the adhesive composition containing such conductive particles, the contact area between the circuit and the conductive particles is increased, and variations in thickness between the plurality of electrodes can be absorbed. Therefore, the viewpoint power of improving reliability is also preferable.
[0068] また、導電性粒子の表面を更に榭脂膜などで被覆した微粒子は、微粒子間の接触 に起因する短絡を一層抑制することができる。したがって、電極回路間の絶縁性が向 上することから、適宜これを単独又は導電性粒子と混合して接着剤組成物に配合し てもよい。  [0068] Further, the fine particles obtained by further coating the surface of the conductive particles with a resin film or the like can further suppress a short circuit caused by contact between the fine particles. Accordingly, since the insulation between the electrode circuits is improved, it may be blended into the adhesive composition, as appropriate, alone or mixed with conductive particles.
[0069] 接着剤組成物中の導電性粒子の含有割合は、 0. 1〜30体積%であると好ましぐ 0. 1〜20体積%であるとより好ましぐ 0. 1〜: LO体積%であると特に好ましい。導電 性粒子の含有割合が 0. 1体積部未満であると、接着剤組成物の硬化物が導電性に 劣る傾向があり、 30体積部を超えると接着剤組成物を回路間接続に用いた場合に、 絶縁させたい回路間の短絡が発生しやすくなる傾向がある。また、同様の観点から、 導電性粒子の含有割合は、熱可塑性榭脂 100質量部に対して、 0. 5〜30質量部で あっても好ましい。  [0069] The content ratio of the conductive particles in the adhesive composition is preferably 0.1 to 30% by volume, more preferably 0.1 to 20% by volume. A volume% is particularly preferred. When the content ratio of the conductive particles is less than 0.1 part by volume, the cured product of the adhesive composition tends to be inferior in conductivity. When the content exceeds 30 parts by volume, the adhesive composition is used for circuit connection. In some cases, a short circuit between the circuits to be insulated tends to occur. From the same viewpoint, the content of the conductive particles is preferably 0.5 to 30 parts by mass with respect to 100 parts by mass of the thermoplastic resin.
[0070] なお、導電性粒子の含有割合は、 23°Cにおける硬化前の接着剤組成物中の各成 分の体積に基づいて決定される。各成分の体積は、比重を利用して質量カゝら体積に 換算してもよい。また、メスシリンダー等にその成分を溶解したり膨潤させたりせず、そ の成分をよく濡らす適当な溶媒 (水、アルコール等)を入れた容器に、その成分を投 入し増加した体積をその体積として求めることもできる。  [0070] The content ratio of the conductive particles is determined based on the volume of each component in the adhesive composition before curing at 23 ° C. The volume of each component may be converted into a volume based on the specific gravity. In addition, do not dissolve or swell the component in a graduated cylinder, etc., and put the component in a container that contains a suitable solvent (water, alcohol, etc.) that wets the component well. It can also be determined as a volume.
[0071] また、本発明の接着剤組成物は、接着フィルムの接着性を更に改善する目的で、 カップリング剤を含有してもよい。カップリング剤としては、例えばトリメトキシシランメタ タリレート、 γ—グリシドキシプロピルトリメトキシシランなどのアルコキシシランが挙げ られる。 [0071] Also, the adhesive composition of the present invention is for the purpose of further improving the adhesiveness of the adhesive film, A coupling agent may be contained. Examples of the coupling agent include alkoxysilanes such as trimethoxysilane methacrylate and γ-glycidoxypropyltrimethoxysilane.
[0072] 本発明に係る接着剤組成物には、その他、必要に応じて、充填剤、軟化剤、老化 防止剤、着色剤、難燃剤、カップリング剤などを、本発明の課題を解決できる範囲で 添カロしてちょい。  [0072] The adhesive composition according to the present invention can solve the problems of the present invention by adding a filler, a softening agent, an anti-aging agent, a colorant, a flame retardant, a coupling agent, and the like, if necessary. Please follow the range.
[0073] 本発明に係る接着フィルムは、電子材料用の接着フィルムとして好適に用いられる  [0073] The adhesive film according to the present invention is suitably used as an adhesive film for electronic materials.
[0074] 本発明の好適な実施形態に係る積層フィルムの製造方法は、表面の残留接着率 C が 80%以上である支持体を選別する第 1工程と、選別工程において選別された支[0074] A method for producing a laminated film according to a preferred embodiment of the present invention includes a first step of selecting a support having a surface residual adhesion ratio C of 80% or more, and a support selected in the selection step.
5 Five
持体の表面上に、接着剤組成物を含有する接着フィルムを形成する第 2工程とを有 するものである。第 1工程において、表面の残留接着率 Cが 80%以上である支持体  And a second step of forming an adhesive film containing the adhesive composition on the surface of the holder. In the first step, a support having a residual surface adhesion C of 80% or more
5  Five
を選別する方法は、上述の支持体の選別方法を採用すればょ ヽ。  If the above-mentioned method of selecting the support is adopted as the method of selecting the substrate.
[0075] 第 2工程にぉ ヽて、接着剤組成物を含有する接着フィルムを支持体上に形成する 方法としては、例えば下記の方法が挙げられる。まず、上述の各成分を混合して得ら れる接着剤組成物に必要により溶剤等を加えるなどして得られる溶液を、支持体上 に塗布して塗膜を形成する。次いで、溶剤の除去などを経て、塗膜を固体又は半固 体状にして、接着フィルムが得られる。あるいは、接着剤組成物を加熱して流動性を 確保した後に溶剤を加えて溶液を得、その溶液を上述と同様に処理して、接着フィ ルムを形成してもよい。 [0075] Examples of a method for forming an adhesive film containing the adhesive composition on the support throughout the second step include the following methods. First, a solution obtained by adding a solvent or the like to the adhesive composition obtained by mixing the above-described components, if necessary, is applied on a support to form a coating film. Next, after removing the solvent, the adhesive film is obtained by making the coating film into a solid or semi-solid state. Alternatively, the adhesive composition may be heated to ensure fluidity, then a solvent is added to obtain a solution, and the solution is treated in the same manner as described above to form an adhesive film.
[0076] 本発明の積層フィルムは、支持体、及びその表面上に形成された接着フィルムの 2 層力 なる積層フィルムであってもよい。あるいは、支持体の表面上に、組成及び Ζ 又は製法が互いに同一又は異なる 2層以上の接着フィルムを設けてなる積層フィル ムであってもよい。この場合、積層フィルムは、上述のようにして支持体の表面上に形 成された接着フィルムの支持体とは反対側の表面上に、更に接着フィルムを上述の ようにして形成することによって得られる。あるいは、積層フィルムは、別々の支持体 の表面上に形成された接着フィルムを、ラミネーター等を用いて互いに重ね合わせる こと〖こよっても得られる。 [0077] 次に、本発明の積層フィルムを用いた回路部材の接続構造の製造方法について 好適な実施形態を説明する。図 4は、この製造方法によって得られる回路部材の接 続構造の一実施形態を示す概略断面図である。図 4に示すように、この回路部材の 接続構造は、相互に対向する第一の回路部材 20及び第二の回路部材 30を備えて おり、第一の回路部材 20と第二の回路部材 30との間には、これらを接続する回路接 続部材 10が設けられている。 [0076] The laminated film of the present invention may be a laminated film having a two-layer force of a support and an adhesive film formed on the surface thereof. Alternatively, it may be a laminated film in which two or more layers of adhesive films having the same or different composition and manufacturing method are provided on the surface of the support. In this case, the laminated film is obtained by further forming an adhesive film as described above on the surface opposite to the support of the adhesive film formed on the surface of the support as described above. It is done. Alternatively, the laminated film can be obtained by laminating adhesive films formed on the surfaces of separate supports with each other using a laminator or the like. Next, a preferred embodiment of a method for manufacturing a circuit member connection structure using the laminated film of the present invention will be described. FIG. 4 is a schematic cross-sectional view showing an embodiment of a circuit member connection structure obtained by this manufacturing method. As shown in FIG. 4, the circuit member connection structure includes a first circuit member 20 and a second circuit member 30 that face each other, and the first circuit member 20 and the second circuit member 30 are provided. Between them, a circuit connecting member 10 is provided for connecting them.
[0078] 第一の回路部材 20は、回路基板 (第一の回路基板) 21と、回路基板 21の主面 21 a上に形成される回路電極 (第一の回路電極) 22とを備えている。一方、第二の回路 部材 30は、回路基板 (第二の回路基板) 31と、回路基板 31の主面 31a上に形成さ れる回路電極 (第二の回路電極) 32とを備えている。なお、回路基板 21、 31としては 、半導体、ガラス、セラミック等の無機物、ポリイミド、ポリカーボネート、ポリエステル、 ポリエーテルスルホン等の有機物、これら無機物や有機物を複合化した材料 (例えば ガラス Zポリエポキシ榭脂)力 なるものが挙げられる。  The first circuit member 20 includes a circuit board (first circuit board) 21 and a circuit electrode (first circuit electrode) 22 formed on the main surface 21a of the circuit board 21. Yes. On the other hand, the second circuit member 30 includes a circuit board (second circuit board) 31 and a circuit electrode (second circuit electrode) 32 formed on the main surface 31 a of the circuit board 31. The circuit boards 21 and 31 include semiconductors, glass, ceramics and other inorganic substances, polyimides, polycarbonates, polyesters, polyethersulfone and other organic substances, and composite materials of these inorganic substances and organic substances (for example, glass Z polyepoxy resin). There are things that can help.
[0079] 第一及び第二の回路部材 20、 30としては、電気的接続を必要とする電極が形成さ れているものであれば特に制限はない。具体的には、液晶ディスプレイに用いられて V、る ITO等で電極が形成されて 、るガラス基板又はプラスチック基板、プリント配線 板、セラミック配線板、フレキシブル配線板が挙げられ、これらは必要に応じて組み合 わせて使用される。 [0079] The first and second circuit members 20, 30 are not particularly limited as long as electrodes that require electrical connection are formed. Specific examples include electrodes used in liquid crystal displays, such as glass substrates or plastic substrates, printed wiring boards, ceramic wiring boards, and flexible wiring boards, which are made of V, ITO, or the like. Used in combination.
[0080] 回路接続部材 10は、絶縁性物質 11及び導電性粒子 7を含有して ヽる。導電性粒 子 7は、対向する回路電極 22と回路電極 32との間のみならず、主面 21a、 31a同士 間にも配置されている。回路部材の接続構造においては、回路電極 22、 32が、導電 性粒子 7を介して電気的に接続されている。すなわち、導電性粒子 7が回路電極 22 、 32の双方に直接接触している。  [0080] The circuit connecting member 10 contains an insulating substance 11 and conductive particles 7. The conductive particles 7 are disposed not only between the circuit electrode 22 and the circuit electrode 32 facing each other but also between the main surfaces 21a and 31a. In the circuit member connection structure, the circuit electrodes 22 and 32 are electrically connected via the conductive particles 7. That is, the conductive particles 7 are in direct contact with both the circuit electrodes 22 and 32.
[0081] ここで、導電性粒子 7は、上述の接着剤組成物に含有されてもよい導電性粒子に 相当する。  Here, the conductive particles 7 correspond to the conductive particles that may be contained in the above-mentioned adhesive composition.
[0082] この回路部材の接続構造においては、上述したように、対向する回路電極 22と回 路電極 32とが導電性粒子 7を介して電気的に接続されている。このため、回路電極 2 2、 32間の接続抵抗が十分に低減される。したがって、回路電極 22、 32間の電流の 流れを円滑にすることができ、回路の持つ機能を十分に発揮することができる。なおIn the circuit member connection structure, as described above, the opposing circuit electrode 22 and circuit electrode 32 are electrically connected via the conductive particles 7. For this reason, the connection resistance between the circuit electrodes 2 2 and 32 is sufficiently reduced. Therefore, the current between circuit electrodes 22 and 32 The flow can be made smooth, and the functions of the circuit can be fully exhibited. In addition
、回路接続部材 10が導電性粒子 7を含有していない場合には、回路電極 22と回路 電極 32とが直接接触することで、電気的に接続される。 When the circuit connecting member 10 does not contain the conductive particles 7, the circuit electrode 22 and the circuit electrode 32 are in direct contact with each other to be electrically connected.
[0083] 回路接続部材 10は後述するように、上記接着フィルムの硬化物により構成されてい る。したがって、回路部材 20又は 30に対する回路接続部材 10の接続信頼性が十分 に高くなる。 [0083] As will be described later, the circuit connecting member 10 is made of a cured product of the adhesive film. Therefore, the connection reliability of the circuit connection member 10 with respect to the circuit member 20 or 30 is sufficiently high.
[0084] 本発明に係る回路部材の接続構造の製造方法では、まず、上述した第一の回路 部材 20と、フィルム状回路接続材料 40を用意する(図 5 (a)参照)。フィルム状回路 接続材料 40は、上述の接着フィルムであり、用意された段階では、本発明に係る支 持体 1の表面上に形成されて積層フィルム 100をなしている。また、ここでのフィルム 状回路接続材料 40は、導電性粒子 7を含有している。フィルム状回路接続材料 40 は、通常は卷芯に卷回されている状態から引き出されて、必要な長さに切断される。  In the method for manufacturing a circuit member connection structure according to the present invention, first, the first circuit member 20 and the film-like circuit connection material 40 described above are prepared (see FIG. 5 (a)). The film-like circuit connecting material 40 is the above-described adhesive film, and is formed on the surface of the support 1 according to the present invention to form the laminated film 100 at the stage of preparation. Further, the film-like circuit connecting material 40 here contains conductive particles 7. The film-like circuit connecting material 40 is usually drawn out from the state of being wound around the core and cut to a required length.
[0085] 次に、フィルム状回路接続材料 40を第一の回路部材 20の回路電極 22が形成され ている面上に載せる。この際、フィルム状回路接続材料 40は支持体 1上に設けられ ているので、フィルム状回路接続材料 40側を第一の回路部材 20に向けるようにして 、第一の回路部材 20上に載せる。回路接続材料力フィルム状であることにより、第一 の回路部材 20と第二の回路部材 30との間にフィルム状回路接続材料 40を容易に 介在させることができ、第一の回路部材 20と第二の回路部材 30との接続作業を容易 に行うことができる。  Next, the film-like circuit connecting material 40 is placed on the surface of the first circuit member 20 on which the circuit electrodes 22 are formed. At this time, since the film-like circuit connecting material 40 is provided on the support 1, the film-like circuit connecting material 40 is placed on the first circuit member 20 so that the film-like circuit connecting material 40 side faces the first circuit member 20. . By being in the form of a circuit connecting material force film, the film-like circuit connecting material 40 can be easily interposed between the first circuit member 20 and the second circuit member 30. Connection work with the second circuit member 30 can be easily performed.
[0086] そして、図 5 (a)の矢印 A及び B方向に加圧し、フィルム状回路接続材料 40を第一 の回路部材 20に仮固定 (仮接続)する。このとき、加熱しながら加圧してもよい。ただ し、加熱温度はフィルム状回路接続材料 40中の接着剤組成物が硬化しな 、温度と する。  Then, pressure is applied in the directions of arrows A and B in FIG. 5A, and the film-like circuit connecting material 40 is temporarily fixed (temporarily connected) to the first circuit member 20. At this time, you may pressurize, heating. However, the heating temperature is a temperature at which the adhesive composition in the film-like circuit connecting material 40 is not cured.
[0087] 次に、フィルム状回路接続材料 40から支持体 1を剥離する(図 5 (b)参照)。この際 、支持体 1は本発明に係る支持体であるため、支持体 1からフィルム状回路接続材料 40への剥離処理剤の移行など、支持体 1とフィルム状回路接続材料 40とが積層され ていたことに起因する接続信頼性の低下要因を十分に抑制することができる。  Next, the support 1 is peeled from the film-like circuit connecting material 40 (see FIG. 5 (b)). At this time, since the support 1 is a support according to the present invention, the support 1 and the film-like circuit connection material 40 are laminated, such as transfer of the release treatment agent from the support 1 to the film-like circuit connection material 40. It is possible to sufficiently suppress the deterioration factor of the connection reliability due to the fact.
[0088] 続 、て、フィルム状回路接続材料 40に活性光線を照射する。次 、で、図 5 (c)に示 すように、第二の回路部材 30を、第二の回路電極を第一の回路部材 20に向けるよう にしてフィルム状回路接続材料 40上に載せる。 Subsequently, the film-like circuit connecting material 40 is irradiated with actinic rays. Next, in Fig. 5 (c) In this manner, the second circuit member 30 is placed on the film-like circuit connecting material 40 so that the second circuit electrode faces the first circuit member 20.
[0089] そして、フィルム状回路接続材料 40を加熱しながら、図 5 (c)の矢印 A及び B方向 に第一及び第二の回路部材 20、 30を介して加圧する。このときの加熱温度は、本発 明の接着剤組成物が硬化可能な温度とする。こうして、フィルム状回路接続材料 40 が硬化処理され、本接続が行われ、図 4に示すような回路部材の接続構造が得られ る。なお、接続の条件は、使用する用途、接着剤組成物、回路部材によって適宜選 択される。 [0089] Then, the film-like circuit connecting material 40 is pressurized through the first and second circuit members 20 and 30 in the directions of arrows A and B in FIG. The heating temperature at this time is a temperature at which the adhesive composition of the present invention can be cured. In this way, the film-like circuit connecting material 40 is cured and the main connection is performed, so that a circuit member connection structure as shown in FIG. 4 is obtained. The connection conditions are appropriately selected depending on the intended use, the adhesive composition, and the circuit member.
[0090] 例えば、加熱温度は、 90〜250°C、圧力は、一般的には被着体に対して 0. 1〜10 [0090] For example, the heating temperature is 90 to 250 ° C, and the pressure is generally 0.1 to 10 to the adherend.
MPa、加熱及び加圧に要する時間(接続時間)は 1秒〜 10分であることが好ましい。 The time required for MPa and heating and pressurization (connection time) is preferably 1 second to 10 minutes.
[0091] また、加熱及び加圧する装置は特に限定されな!、が、生産性や利便性を考慮する と、ヒーターが内蔵された加圧ヘッドを備える加圧加熱装置であると好ましい。 [0091] The apparatus for heating and pressurizing is not particularly limited! However, in consideration of productivity and convenience, a pressurizing and heating apparatus including a pressurizing head with a built-in heater is preferable.
[0092] 上述のようにして、回路部材の接続構造を製造すると、得られる回路部材の接続構 造において、接続信頼性が向上するので、回路部材の接続構造の歩留まりが十分 に高くなる。 When the circuit member connection structure is manufactured as described above, the connection reliability is improved in the obtained circuit member connection structure, and therefore the yield of the circuit member connection structure is sufficiently increased.
[0093] 以上、本発明の好適な実施形態について説明したが、本発明はこれらに限定され るものではない。例えば、本発明の別の実施形態に係る積層フィルムの製造方法は 、表面の残留接着率 Cが 80%以上となるように支持体を形成する工程と、その支持  [0093] Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these. For example, the method for producing a laminated film according to another embodiment of the present invention includes a step of forming a support so that the residual adhesion C on the surface is 80% or more, and the support
5  Five
体の表面上に、接着剤組成物を含有する接着フィルムを形成する工程とを有するも のである。支持体を形成する工程においては、上述の支持体の選別方法によって選 択された、表面の残留接着率 Cが 80%以上である支持体と実質的に同一の組成及  Forming an adhesive film containing the adhesive composition on the surface of the body. In the step of forming the support, the composition and the composition are substantially the same as those of the support selected by the above-described support screening method and having a surface residual adhesion ratio C of 80% or more.
5  Five
び製法で、支持体を形成すればよい。  The support may be formed by a manufacturing method.
[0094] また、回路部材の接続構造の製造方法において、加熱及び加圧による硬化処理の 後に、更に光、超音波及び Z又は電磁波を用いた硬化処理を行ってもよい。 [0094] Further, in the method for manufacturing a circuit member connection structure, after the curing process by heating and pressurization, a curing process using light, ultrasonic waves, Z, or electromagnetic waves may be further performed.
[0095] さらには、本発明の別の実施形態において、接着フィルムが、半導体装置における 半導体素子と回路パターンとを接続する半導体接続部材の材料として用いられても よい。 [0095] Furthermore, in another embodiment of the present invention, an adhesive film may be used as a material for a semiconductor connection member that connects a semiconductor element and a circuit pattern in a semiconductor device.
[0096] 図 6は、この半導体装置の一実施形態を示す概略断面図である。図 6に示すように 、本実施形態の半導体装置 80は、半導体素子 50と、半導体の支持部材となる基板 60とを備えており、半導体素子 50及び基板 60の間には、これらを電気的に接続す る半導体素子接続部材 40が設けられている。また、半導体素子接続部材 40は基板 60の主面 60a上に積層され、半導体素子 50は更にその半導体素子接続部材 40上 に積層されている。 FIG. 6 is a schematic cross-sectional view showing an embodiment of this semiconductor device. As shown in Figure 6 The semiconductor device 80 of the present embodiment includes a semiconductor element 50 and a substrate 60 that serves as a semiconductor support member, and the semiconductor element that electrically connects them between the semiconductor element 50 and the substrate 60. A connecting member 40 is provided. The semiconductor element connection member 40 is laminated on the main surface 60a of the substrate 60, and the semiconductor element 50 is further laminated on the semiconductor element connection member 40.
[0097] 基板 60は回路パターン 61を備えており、回路パターン 61は、基板 60の主面 60a 上で半導体接続部材 40を介して又は直接に半導体素子 50と電気的に接続されて いる。そして、これらが封止材 70により封止され、半導体装置 80が形成される。  The substrate 60 includes a circuit pattern 61, and the circuit pattern 61 is electrically connected to the semiconductor element 50 via the semiconductor connection member 40 on the main surface 60 a of the substrate 60 or directly. These are sealed with a sealing material 70 to form a semiconductor device 80.
[0098] 半導体素子 50の材料としては特に制限されないが、シリコン、ゲルマニウムの 4族 の半導体素子、 GaAs、 InP、 GaP、 InGaAsなどの III V族化合物半導体素子、 Η gTe、 HgCdTe、 CdMnTe等の Π— VI族化合物半導体素子、そして、 CuInSe (CI S)などの種々のものを用いることができる。  [0098] The material of the semiconductor device 50 is not particularly limited, but is a group 4 semiconductor device of silicon, germanium, a group IIIV compound semiconductor device such as GaAs, InP, GaP, InGaAs, or the like, such as ΗgTe, HgCdTe, or CdMnTe. — Group VI compound semiconductor devices and various devices such as CuInSe (CIS) can be used.
[0099] 半導体素子接続部材 40は、絶縁性物質 11及び導電性粒子 7を含有しており、本 発明の接着フィルムの硬化物である。導電性粒子 7は、半導体素子 50と回路パター ン 61との間のみならず、半導体素子 50と主面 60aとの間にも配置されている。本実 施形態の半導体装置 80においては、半導体素子 50と回路パターン 61とが、導電性 粒子 7を介して電気的に接続されている。このため、半導体素子 50及び回路パター ン 61間の接続抵抗が十分に低減される。したがって、半導体素子 50及び回路バタ ーン 61間の電流の流れを円滑にすることができ、半導体の有する機能を十分に発揮 することができる。また、この導電性粒子 7を上述した配合割合とすることによって電 気的な接続の異方性を示すことも可能である。  [0099] The semiconductor element connecting member 40 contains the insulating substance 11 and the conductive particles 7, and is a cured product of the adhesive film of the present invention. The conductive particles 7 are disposed not only between the semiconductor element 50 and the circuit pattern 61 but also between the semiconductor element 50 and the main surface 60a. In the semiconductor device 80 of this embodiment, the semiconductor element 50 and the circuit pattern 61 are electrically connected via the conductive particles 7. For this reason, the connection resistance between the semiconductor element 50 and the circuit pattern 61 is sufficiently reduced. Therefore, the current flow between the semiconductor element 50 and the circuit pattern 61 can be made smooth, and the functions of the semiconductor can be fully exhibited. In addition, it is possible to show the anisotropy of electrical connection by setting the conductive particles 7 to the above-described mixing ratio.
[0100] 半導体素子接続部材 40は、本発明に係る接着フィルムの硬化物により構成されて いることから、半導体素子 50及び回路パターン 61間の接続信頼性が向上すると共 に、半導体装置 80の歩留まりも十分に高くなる。  [0100] Since the semiconductor element connection member 40 is made of the cured adhesive film according to the present invention, the connection reliability between the semiconductor element 50 and the circuit pattern 61 is improved, and the yield of the semiconductor device 80 is increased. Will be high enough.
実施例  Example
[0101] 以下、実施例によって本発明を更に詳細に説明するが、本発明はこれらの実施例 に限定されるものではない。  [0101] Hereinafter, the present invention will be described in more detail by way of examples. However, the present invention is not limited to these examples.
[0102] [支持体の準備] 基材フィルムとして、ポリエチレンテレフタレート(以下、「PET」と表記する。)フィル ムを準備した。それとは別に、アミノアルキッド榭脂(日立化成ポリマー社製、商品名「 TA31 - 209」 )と酸性触媒(日立化成ポリマー社製、商品名「ドライヤー 900」 )とを、 固形分の質量比で 100 : 1〜: LOO : 5の割合で混合し、更に溶剤で希釈して溶液を得 た。得られた溶液を、上記 PETフィルムの片面にコーティングして、更に溶媒を揮発 させることにより、 # 1〜# 6の支持体用基材を作製した。また、支持体用基材 # 7とし て帝人社製、商品名「AH3」、支持体用基材 # 8として、帝人社製、商品名「UH2」 を準備した。 [0102] [Preparation of support] A polyethylene terephthalate (hereinafter referred to as “PET”) film was prepared as a base film. Separately, amino alkyd resin (trade name “TA31-209” manufactured by Hitachi Chemical Co., Ltd.) and acid catalyst (trade name “Dryer 900” manufactured by Hitachi Chemical Polymer Co., Ltd.) in a mass ratio of 100% solids. : 1 ~: LOO: 5 was mixed and further diluted with a solvent to obtain a solution. The obtained solution was coated on one side of the PET film, and the solvent was volatilized to prepare # 1 to # 6 support substrates. In addition, a product name “AH3” manufactured by Teijin Limited was prepared as the base material for support # 7, and a product name “UH2” manufactured by Teijin Limited was prepared as the base material for support # 8.
[0103] 支持体用基材 # 1〜8の厚みを測定した。また、支持体用基材 # 1〜8表面の残留 接着率 Cを、上述のようにして測定した。結果を表 1に示す。  [0103] The thicknesses of base materials for support # 1-8 were measured. Further, the residual adhesion rate C on the surface of the substrate for support # 1-8 was measured as described above. The results are shown in Table 1.
5  Five
[0104] [表 1]  [0104] [Table 1]
Figure imgf000022_0001
Figure imgf000022_0001
[0105] (実施例 1) [0105] (Example 1)
まず、固形分の重量で、フィルム形成成分のフルオレンービフヱ-ル型フヱノキシ 榭脂 40g、同じくビスフエノール A型フエノキシ榭脂 10g、重合性ィ匕合物のトリス (ァク リロキシェチル)イソシァヌレート 10g、同じくウレタンアタリレート 10g、カップリング剤 のトリメトキシシランメタタリレート 10g、並びに、重合開始剤の n—ブチル 4, 4 ビ ス (t ブチルパーォキシ)バレレート 3gを配合した。そこに、更に導電性粒子を 40g 配合分散させて、第 1の接着剤組成物を得た。導電性粒子は、ポリスチレンを核とす る粒子の表面に、厚み 0. 2 μ mのニッケル層及び厚み 0. 04 μ mの金層をこの順で 形成させて、更にその表面にポリビュルアルコールからなる層を形成させて得られた 。この導電性粒子の平均粒径は 4 μ mであった。 First, based on the weight of solids, the film-forming component fluorene biphenyl type phenoloxy resin 40g, bisphenol A type phenoloxy resin 10g, polymerizable compound tris (acryloxychetyl) isocyanurate 10g Similarly, 10 g of urethane acrylate, 10 g of trimethoxysilane metatalylate as a coupling agent, and 3 g of n-butyl 4,4-bis (t-butylperoxy) valerate as a polymerization initiator were blended. Thereto, 40 g of conductive particles were further mixed and dispersed to obtain a first adhesive composition. The conductive particles are formed by forming a 0.2 μm thick nickel layer and a 0.04 μm thick gold layer in this order on the surface of polystyrene-based particles, and then forming a polybutyl alcohol on the surface. Obtained by forming a layer consisting of . The average particle diameter of the conductive particles was 4 μm.
[0106] 次に、支持体用基材 # 1の表面上に、塗工装置を用いて、上記第 1の接着剤組成 物を塗布して塗膜を得た。その塗膜を 70°Cで 5分間熱風により乾燥し、接着フィルム の厚さが 25 μ mである第 1の中間積層体を得た。  [0106] Next, the first adhesive composition was applied onto the surface of the substrate for support # 1 using a coating apparatus to obtain a coating film. The coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a first intermediate laminate having an adhesive film thickness of 25 μm.
[0107] 次いで、固形分の重量で、フィルム形成成分のフルオレンービフヱ-ル型フエノキ シ榭脂 40g、同じくビスフエノール A型フエノキシ榭脂 10g、重合性ィ匕合物のトリス (ァ クリロキシェチル)イソシァヌレート 10g、同じくウレタンアタリレート 10g、カップリング 剤のトリメトキシシランメタタリレート 10g、並びに、重合開始剤の n—ブチル—4, 4— ビス (t—ブチルパーォキシ)バレレート 3gを配合して第 2の接着剤組成物を得た [0107] Next, in terms of the weight of the solid content, the film-forming component fluorene-biphenyl type phenolic resin 40g, the same bisphenol A type phenolic resin 10g, and the polymerizable compound tris (acrylochelchetil) ) 10g of isocyanurate, 10g of urethane acrylate, 10g of trimethoxysilane metatalylate as coupling agent, and 3g of n-butyl-4,4-bis (t-butylperoxy) valerate as polymerization initiator. Obtained an adhesive composition
[0108] 続いて、支持体用基材 # 2の表面上に、塗工装置を用いて、上記第 2の接着剤組 成物を塗布して塗膜を得た。その塗膜を 70°Cで 5分間熱風により乾燥し、接着フィル ムの厚さが 25 μ mである第 2の中間積層体を得た。 [0108] Subsequently, the second adhesive composition was applied onto the surface of the substrate for support # 2 using a coating apparatus to obtain a coating film. The coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a second intermediate laminate having an adhesive film thickness of 25 μm.
[0109] 第 1の中間積層体及び第 2の中間積層体を、互いの接着フィルムが重ね合い、そ れぞれの支持体用基材でそれら接着フィルムを挟むようにして、ラミネーターを用い て、 40°C、 0. 5mmZmin、無加圧の条件で貼り合わせ、積層フィルムを得た。  [0109] Using the laminator, the first intermediate laminate and the second intermediate laminate are laminated such that the adhesive films overlap each other and the adhesive films are sandwiched between the respective substrates for the support. Lamination was performed under the conditions of ° C, 0.5 mmZmin, no pressure, and a laminated film was obtained.
[0110] (実施例 2)  [0110] (Example 2)
支持体用基材 # 1に代えて支持体用基材 # 3を用い、支持体用基材 # 2に代えて 支持体用基材 # 4を用いた以外は実施例 1と同様にして、積層フィルムを得た。  In the same manner as in Example 1, except that the support substrate # 3 was used instead of the support substrate # 1, and the support substrate # 4 was used instead of the support substrate # 2. A laminated film was obtained.
[0111] (実施例 3) [0111] (Example 3)
支持体用基材 # 1に代えて支持体用基材 # 5を用い、支持体用基材 # 2に代えて 支持体用基材 # 6を用いた以外は実施例 1と同様にして、積層フィルムを得た。  In the same manner as in Example 1, except that the support substrate # 5 was used instead of the support substrate # 1, and the support substrate # 6 was used instead of the support substrate # 2. A laminated film was obtained.
[0112] (実施例 4) [0112] (Example 4)
まず、固形分の重量で、フィルム形成成分のフルオレンービフヱ-ル型フヱノキシ 榭脂 10g、同じくビスフエノール A型フエノキシ榭脂 30g、重合性化合物のフエノール ノボラック型エポキシ榭脂 20g、カップリング剤の γ —グリシドキシプロピルトリメトキシ シラン 5g、並びに、硬化剤のイミダゾール系硬化剤 40gを配合した。そこに、更に実 施例 1で用いたものと同様に導電性粒子を 40g配合分散させて、第 1の接着剤組成 物を得た。 [0113] 次に、支持体用基材 # 1の表面上に、塗工装置を用いて、上記第 1の接着剤組成 物を塗布して塗膜を得た。その塗膜を 70°Cで 5分間熱風により乾燥し、接着フィルム の厚さが 12 mである第 1の中間積層体を得た。 First, based on the weight of the solids, the film-forming component fluorene biphenol type phenolic resin 10g, bisphenol A type phenolic resin 30g, polymerizable compound phenol novolac type epoxy resin 20g, coupling agent 5 g of γ-glycidoxypropyltrimethoxysilane and 40 g of an imidazole curing agent as a curing agent were blended. Further, 40 g of conductive particles were mixed and dispersed in the same manner as in Example 1 to obtain a first adhesive composition. [0113] Next, a coating film was obtained by applying the first adhesive composition on the surface of the substrate for support # 1 using a coating apparatus. The coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a first intermediate laminate having an adhesive film thickness of 12 m.
[0114] 次いで、固形分の重量で、フィルム形成成分のフルオレンービフヱ-ル型フエノキ シ榭脂 10g、同じくビスフエノール A型フエノキシ榭脂 30g、重合性ィ匕合物のフエノー ルノボラック型エポキシ榭脂 20g、カップリング剤の γ—グリシドキシプロピルトリメトキ シシラン 5g、並びに、硬化剤のイミダゾール系硬化剤 40gを配合して第 2の接着剤組 成物を得た  [0114] Next, in terms of the weight of the solid content, the film-forming component fluorene biphenol type phenolic resin 10 g, the same bisphenol A type phenolic resin 30 g, the polymerizable novolac type epoxy resin A second adhesive composition was obtained by blending 20 g of rosin, 5 g of γ-glycidoxypropyltrimethoxysilane as a coupling agent, and 40 g of an imidazole curing agent as a curing agent.
[0115] 続いて、支持体用基材 # 2の表面上に、塗工装置を用いて、上記第 2の接着剤組 成物を塗布して塗膜を得た。その塗膜を 70°Cで 5分間熱風により乾燥し、接着フィル ムの厚さが 13 mである第 2の中間積層体を得た。  [0115] Subsequently, the second adhesive composition was applied onto the surface of the substrate for support # 2 using a coating apparatus to obtain a coating film. The coating film was dried with hot air at 70 ° C. for 5 minutes to obtain a second intermediate laminate having an adhesive film thickness of 13 m.
[0116] 第 1の中間積層体及び第 2の中間積層体を、互いの接着フィルムが重ね合い、そ れぞれの支持体用基材でそれら接着フィルムを挟むようにして、ラミネーターを用い て、 40°C、 0. 5mmZmin、無加圧の条件で貼り合わせ、積層フィルムを得た。  [0116] Using the laminator, the first intermediate laminate and the second intermediate laminate are laminated such that the adhesive films overlap each other and the adhesive films are sandwiched between the respective substrates for support. Lamination was performed under the conditions of ° C, 0.5 mmZmin, no pressure, and a laminated film was obtained.
[0117] (比較例 1)  [0117] (Comparative Example 1)
支持体用基材 # 1に代えて支持体用基材 # 7を用い、支持体用基材 # 2に代えて 支持体用基材 # 8を用いた以外は実施例 1と同様にして、積層フィルムを得た。  In the same manner as in Example 1 except that the support substrate # 7 was used instead of the support substrate # 1, and the support substrate # 8 was used instead of the support substrate # 2. A laminated film was obtained.
[0118] (比較例 2) [0118] (Comparative Example 2)
支持体用基材 # 1に代えて支持体用基材 # 7を用い、支持体用基材 # 2に代えて 支持体用基材 # 8を用いた以外は実施例 4と同様にして、積層フィルムを得た。  In the same manner as in Example 4 except that the support substrate # 7 was used instead of the support substrate # 1, and the support substrate # 8 was used instead of the support substrate # 2, A laminated film was obtained.
[0119] [接続抵抗測定用サンプルの作製] [0119] [Preparation of connection resistance measurement sample]
回路電極としてインジウム—錫酸ィ匕物(以下、「ITO」と表記する。)からなる回路 (ラ イン幅 50 μ m、ピッチ 100 μ m、厚み 250nm(2500A μ m)がガラス基板(コーニン グ社製、商品名「# 1737」、 28mm X 32mm X O. 7mm)上に形成された回路部材 を準備した。次に、実施例 1で作製した積層フィルムを 2. 5mm X 20mmに切り出し た。続いて、この積層フィルムにおける支持体用基材 # 2を剥離し、それにより露出し た接着フィルムが上述の回路部材の上記回路形成側の主面と相対するようにして、 積層フィルムを貼り付けた。貼り付けの条件は、加熱温度 90°C、加圧圧力 IMPa (貼 り付け面積当たり)、 3秒間とした。 A circuit (line width 50 μm, pitch 100 μm, thickness 250 nm (2500 A μm) made of indium-stannate (hereinafter referred to as “ITO”) as a circuit electrode is a glass substrate (coning A circuit member formed on a product name “# 1737”, 28 mm × 32 mm × O. 7 mm) was prepared, and the laminated film produced in Example 1 was cut into 2.5 mm × 20 mm. Subsequently, the base material for support # 2 in this laminated film is peeled off, and the laminated film is pasted so that the exposed adhesive film faces the main surface of the circuit member on the circuit forming side. The pasting conditions were: heating temperature 90 ° C, pressure IMPa (paste 3 seconds).
[0120] 次に、チップサイズが 1. 7mmX 17mm X 0. 55mm,バンプ面積が 50 m X 50 μ m、バンプ高さが 15 μ m、バンプ数が 358個の金バンプ電極を配置した ICチップ を準備した。続いて、上記回路部材に貼り付けた積層フィルムの支持体用基材 # 1を 剥離した。次いで、支持体用基材 # 1の剥離により露出した接着フィルムと、 ICチッ プの金バンプ電極側とが対向し、かつ ICチップ及び上記回路部材の電極同士が接 続できるように位置合わせを行 、ながら、積層フィルム付き回路部材と ICチップとを 重ね合わせた。そして、加圧加熱ヘッドを備える加圧加熱装置を用いて、それらを IC チップ側力ゝらの加熱加圧により圧着して、実施例 1に係る接続抵抗測定用サンプル を得た。加熱加圧の条件は、接続温度 200°C、加圧圧力 80MPa (バンプの総面積 当たり)、 3秒間とした。 [0120] Next, an IC chip with a gold bump electrode with a chip size of 1.7 mm x 17 mm x 0.55 mm, a bump area of 50 m x 50 μm, a bump height of 15 μm, and a bump count of 358 Prepared. Subsequently, the base material for support # 1 of the laminated film attached to the circuit member was peeled off. Next, alignment is performed so that the adhesive film exposed by peeling off the substrate for support # 1 and the gold bump electrode side of the IC chip face each other, and the IC chip and the electrodes of the circuit member can be connected to each other. However, the circuit member with laminated film and the IC chip were superposed. Then, using a pressure heating device equipped with a pressure heating head, they were pressure-bonded by heating and pressing by an IC chip side force, and the connection resistance measurement sample according to Example 1 was obtained. The heating and pressing conditions were a connection temperature of 200 ° C, a pressing pressure of 80 MPa (per total bump area), and 3 seconds.
[0121] また、実施例 2〜4、比較例 1、 2の積層フィルムをそれぞれ用いて、上述と同様にし て、それぞれ実施例 2〜4、比較例 1、 2に係る接続抵抗測定用サンプルを得た。  [0121] In addition, using the laminated films of Examples 2 to 4 and Comparative Examples 1 and 2, respectively, the connection resistance measurement samples according to Examples 2 to 4 and Comparative Examples 1 and 2 were obtained in the same manner as described above. Obtained.
[0122] [接続抵抗の測定]  [0122] [Measurement of connection resistance]
得られた接続抵抗測定用サンプルにつ 、て、回路部材における電極回路と ICチッ プにおけるバンプ電極との間の電気抵抗値 (接続抵抗)を、 4端子測定法によりデジ タルマルチメータを用いて測定した。測定電流は 1mAとした。測定は、接続抵抗測 定用サンプル作製直後(初期)、並びに、そのサンプルを熱サイクル条件に曝した後 (サイクル後)で行った。なお、熱サイクルは ESPEC社製冷熱衝撃試験装置 (商品名 「TSA— 41L— A)を使用した。また、熱サイクル条件は、— 40°Cで 15分間の保持と 100°Cで 15分間の保持とを 1000回繰り返す条件とした。結果を表 2に示す。  For the obtained connection resistance measurement sample, the electrical resistance value (connection resistance) between the electrode circuit in the circuit member and the bump electrode in the IC chip was measured using a digital multimeter by the 4-terminal measurement method. It was measured. The measurement current was 1 mA. The measurement was performed immediately after preparation of the connection resistance measurement sample (initial stage) and after the sample was exposed to thermal cycle conditions (after cycle). The thermal cycle used was a thermal shock test apparatus (trade name “TSA-41L-A” manufactured by ESPEC) .The thermal cycle conditions were: −40 ° C for 15 minutes and 100 ° C for 15 minutes. The condition was repeated 1000 times, and the results are shown in Table 2.
[0123] [表 2] 実施例 比較例  [0123] [Table 2] Examples Comparative examples
1 2 3 4 1 2 1 2 3 4 1 2
# 1 #3 #5 # 1 #7 #フ 支持体 # 1 # 3 # 5 # 1 # 7 #F Support
#2 #4 #6 #2 #8 #8 接続抵抗(Ω )  # 2 # 4 # 6 # 2 # 8 # 8 Connection resistance (Ω)
初期 1 1 1 1 1 0 5 サイクル後 36 32 30 20 84 65 産業上の利用可能性 Initial 1 1 1 1 1 0 5 After cycle 36 32 30 20 84 65 Industrial applicability
本発明によると、支持体の表面上に接着フィルムを積層してなる積層フィルムであ つて、上記接着フィルムが十分な接続信頼性を有する積層フィルムを提供することが できる。  According to the present invention, it is possible to provide a laminated film obtained by laminating an adhesive film on the surface of a support, wherein the adhesive film has sufficient connection reliability.

Claims

請求の範囲 The scope of the claims
[1] 支持体の表面上に、接着剤組成物を含有する接着フィルムが形成されてなる積層 フィルムであって、前記支持体は、前記表面の残留接着率 C力 ¾0%以上である、積  [1] A laminated film in which an adhesive film containing an adhesive composition is formed on the surface of a support, wherein the support has a residual adhesion rate C force of ≧ 0% or more on the surface.
5  Five
層フィルム。  Layer film.
[2] 前記接着剤組成物は導電性粒子を含む、請求項 1記載の積層フィルム。  [2] The laminated film according to [1], wherein the adhesive composition contains conductive particles.
[3] 支持体の表面上に、接着剤組成物を含有する接着フィルムが形成されてなる積層 フィルムの、前記支持体を選別する積層フィルム用支持体の選別方法であって、 前記表面の残留接着率 C力 ¾0%以上である前記支持体を選別する方法。 [3] A method for sorting a laminated film support for sorting the support of a laminated film in which an adhesive film containing an adhesive composition is formed on the surface of the support, wherein the surface remains A method of selecting the support having an adhesion rate C force of ¾0% or more.
5  Five
[4] 表面の残留接着率 Cが 80%以上である支持体を選別する工程と、  [4] A step of selecting a support having a residual surface adhesion C of 80% or more,
5  Five
前記選別工程にお!ヽて選別された前記支持体の前記表面上に、接着剤組成物を 含有する接着フィルムを形成する工程と、を有する、積層フィルムの製造方法。  Forming an adhesive film containing an adhesive composition on the surface of the support that has been selected in the screening step.
[5] 表面の残留接着率 Cが 80%以上となるように支持体を形成する工程と、 [5] forming a support so that the residual adhesion C on the surface is 80% or more;
5  Five
前記支持体の前記表面上に、接着剤組成物を含有する接着フィルムを形成するェ 程と、を有する、積層フィルムの製造方法。  A process for forming an adhesive film containing an adhesive composition on the surface of the support.
[6] 標準試料である粘着テープと所定の金属板との剥離強度を測定し、これを基準剥 離強度 Aとする工程と、前記粘着テープを測定対象である積層フィルム用支持体に 貼り付けて力 剥離し、前記所定の金属板との間の剥離強度を測定する手順を 5回 繰り返し、 5回目の剥離強度を Bとする工程と、前記剥離強度 A及び Bから、下記式 [6] Measure the peel strength between the adhesive tape, which is a standard sample, and a predetermined metal plate, and use this as the reference peel strength A, and attach the adhesive tape to the laminated film support that is the object of measurement. The procedure of measuring the peel strength between the predetermined metal plate and the predetermined metal plate is repeated 5 times, and the following formula is obtained from the step of setting the fifth peel strength to B and the peel strength A and B:
5 5  5 5
(1)で表される残留接着率 Cを導出する工程と、を有する積層フィルム用支持体の  A step of deriving a residual adhesion rate C represented by (1),
5  Five
評価方法。  Evaluation methods.
C =B /AX 100 (1)  C = B / AX 100 (1)
PCT/JP2006/311766 2005-06-14 2006-06-12 Multilayer film, method for producing same, method for selecting supporting body for multilayer film, and method for evaluating supporting body for multilayer film WO2006134880A1 (en)

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