WO2006134662A1 - Appareil de mesure de film mince, procédé de mesure de film mince et procédé de fabrication de film mince - Google Patents

Appareil de mesure de film mince, procédé de mesure de film mince et procédé de fabrication de film mince Download PDF

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Publication number
WO2006134662A1
WO2006134662A1 PCT/JP2005/011136 JP2005011136W WO2006134662A1 WO 2006134662 A1 WO2006134662 A1 WO 2006134662A1 JP 2005011136 W JP2005011136 W JP 2005011136W WO 2006134662 A1 WO2006134662 A1 WO 2006134662A1
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WIPO (PCT)
Prior art keywords
thin film
measurement sample
measuring
current
seed layer
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PCT/JP2005/011136
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English (en)
Japanese (ja)
Inventor
Keizo Yamada
Original Assignee
Topcon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Topcon Corporation filed Critical Topcon Corporation
Priority to PCT/JP2005/011136 priority Critical patent/WO2006134662A1/fr
Publication of WO2006134662A1 publication Critical patent/WO2006134662A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness

Definitions

  • Thin film measuring apparatus thin film measuring method and thin film manufacturing method
  • the present invention relates to a thin film measuring device, a thin film measuring method, and a thin film manufacturing method.
  • the present invention provides a thin film measuring apparatus, a thin film measuring method, and a thin film manufacturing method suitable for performing a process evaluation during a semiconductor device manufacturing process using a probe such as an electron beam, an ion beam, an electromagnetic wave, a sound wave, and a vibration.
  • a probe such as an electron beam, an ion beam, an electromagnetic wave, a sound wave, and a vibration.
  • Cross-sectional SEM Sccanning Electron Microscope
  • FIB Free used Ion Beam
  • an electron beam is applied to a cross section of a sample in which a seed layer 44 is formed on an insulating film 42, and an image is formed, and the length is measured.
  • information on the cross section of the seed layer (such as the shape of hole 43) can be obtained.
  • Patent Document 1 Japanese Patent Laid-Open No. 2005-26449
  • the present invention has been made to solve such a problem, and its purpose is to A thin film measuring device, a thin film measuring method, and a thin film measuring device capable of measuring a minute current flowing through a measurement sample such as a semiconductor substrate by probe irradiation such as a film to know characteristics of a thin film such as a seed layer without destroying the sample. It is to provide a thin film manufacturing method.
  • Another object of the present invention is to provide a thin film measuring apparatus, a thin film measuring method, and a thin film manufacturing method capable of measuring a planar or three-dimensional seed layer geometry, which is impossible with the prior art. is there.
  • the thin film measuring apparatus of the present invention is a current for measuring a current generated in a measurement sample when a probe such as an electron beam is irradiated onto the measurement sample (or a product substrate).
  • a thin film measuring apparatus having a measuring means, wherein the current measuring means measures the measurement sample before forming the predetermined thin film on the measurement sample (for example, a current waveform), and the thin film is applied to the measurement sample.
  • a characteristic extracting means for measuring the characteristics of the thin film based on the result (for example, current waveform) measured by the current measuring means after the formation of the measurement sample is provided.
  • the current measuring means can measure the current (substrate current) generated in the measurement sample when the measurement sample such as a wafer is irradiated with the probe.
  • the characteristics of the thin film can be measured based on the substrate current before the thin film is formed on the measurement sample and the substrate current after the thin film is formed.
  • an electron beam, ion beam, electromagnetic wave, sound wave, vibration, or the like can be applied as the probe in the present invention.
  • the measurement sample may be Ueno, which is the source of a product that does not need to be a so-called exclusive sample, or the product itself.
  • the thin film measuring apparatus of the present invention is characterized in that the thin film is a seed layer, and the result measured by the current measuring means is a current waveform or data on the current waveform.
  • the current waveform is a waveform measured by the current measuring means when the irradiation position of the probe in the measurement sample is moved.
  • the thin film measuring apparatus of the present invention for example, based on the waveform formed by the substrate current when the probe is scanned with respect to the measurement sample, the thickness of the seed layer, the thickness distribution, the state of the drain, the shape, the composition, Electrical characteristics can be measured. Therefore, according to the present invention, it is possible to measure the geometric shape of a planar or three-dimensional seed layer, which was impossible with the prior art.
  • the characteristic extraction unit forms the thin film with a first edge that is an edge of the current waveform for the measurement sample before the thin film is formed. Then, the characteristics of the thin film are measured on the basis of the second edge that is the edge of the current waveform of the measurement sample.
  • the shape of the measurement sample without the thin film can be measured at the first edge, and the shape of the measurement sample with the thin film can be measured as the second characteristic. It can be measured at the edge. Therefore, based on the relative difference between the first edge and the second edge, the shape of the thin film itself, such as electrical characteristics, can be measured.
  • the characteristic extracting means includes a reference point specifying means for specifying a reference point (coordinate origin) as a reference position of coordinates for the measurement sample, and a reference point specifying means. There is provided means for obtaining a distance to the first edge and means for obtaining a distance from the reference point to the second edge.
  • the thin film measuring apparatus of the present invention it is possible to measure the shape of the thin film, such as electrical characteristics, while recognizing the reference point force of the measurement sample and the absolute distance to the irradiation position of the probe. Therefore, it is possible to measure the shape of the thin film at every absolute position in the measurement sample, such as the electrical characteristics, and to perform more accurate process management.
  • the measurement sample has a hole (for example, a hole or a depression) formed before the thin film is formed, and the thin film is also formed in the hole.
  • the characteristic extracting means is a means for obtaining a diameter of the hole before the thin film is formed, and a hole diameter that is a depression or a hole in the hole portion after the thin film is formed. And means for measuring characteristics of the thin film on the basis of the diameter of the hole and the diameter of the hole.
  • the thin film measuring apparatus of the present invention for example, the bottom surface of the hole formed in the wafer and For the measurement sample with the seed layer on the side, it is possible to accurately check whether the seed layer has a force that is formed as designed over the entire bottom and side.
  • the measurement sample is subjected to a flattening process on the thin film after a predetermined thin film is formed on the measurement sample, and the feature extraction is performed.
  • the means includes means for measuring a width of an edge of the thin film that appears on the surface of the measurement sample by the planarization process.
  • a hole may be formed in a wafer as a measurement sample, a seed layer may be formed on the side surface and bottom surface of the hole, and a conductor may be formed on the first seed layer so as to fill the hole. Thereafter, when the surface of the measurement sample is scraped by flattening such as CMP or etchback, the seed layer on the side surface of the hole is exposed on the surface of the measurement sample. According to the present invention, the width of the exposed portion of the seed layer can be precisely measured.
  • the planarization process can be performed as one of the manufacturing processes of the semiconductor device, it is possible to satisfactorily measure the characteristics of an extremely thin thin film such as a seed layer without destroying the measurement sample. it can.
  • the thin film measuring apparatus of the present invention has a means for irradiating a thinly focused electron beam toward the thin film formed on the measurement sample, and is generated in the measurement sample upon irradiation with the electric beam. It has a means for measuring a waveform of a substrate current, which is a current, and a means for making the magnitude of the substrate current correspond to the thickness of the thin film.
  • the thickness distribution and the like of the thin film on the measurement sample can be accurately and nondestructively measured by scanning the measurement sample with an electron beam.
  • the thin film measurement method of the present invention is a thin film measurement apparatus having a current measurement step for measuring a current generated in a measurement sample when the measurement sample is irradiated with a probe such as an electron beam.
  • the measurement result of the measurement sample before forming the predetermined thin film on the measurement sample for example, current waveform
  • the measurement after the thin film is formed on the measurement sample.
  • the characteristic extraction step which measures the characteristic of a thin film, It is characterized by the above-mentioned.
  • the thin film measurement method of the present invention when a measurement sample such as a wafer is irradiated with a probe, a current (substrate current) generated in the measurement sample can be measured.
  • the characteristics of the thin film can be measured based on the substrate current before the thin film is formed on the measurement sample and the substrate current after the thin film is formed.
  • the thin film measurement method of the present invention is configured so that the measurement sample has a coordinate at a depth and position in the measurement sample rather than a film thickness that is removed by flattening the measurement sample.
  • a coordinate origin which is a structure indicating a reference position of the thin film, and a thin film formed on the measurement sample, wherein the characteristics of the thin film to be planarized are measured using the coordinate origin.
  • the coordinate origin can be present in the measurement sample even after the measurement sample is flattened by CMP or etchback. Therefore, the present invention can measure the shape of the thin film for each absolute position in the measurement sample's electrical characteristics, etc., even for the measurement sample after the flattening treatment, and more accurate process management, etc. Can do.
  • the thin film manufacturing method of the present invention uses the substrate current, which is a current generated in the measurement sample, when the measurement sample is irradiated with a probe such as an electron beam. It is characterized in that the manufacturing process of the thin film is managed by obtaining characteristics of the formed thin film and comparing the characteristics of the thin film with a reference value.
  • the thin film manufacturing method of the present invention for example, it is possible to accurately confirm whether or not the thin film of the semiconductor device has been formed as designed during the manufacturing process of a semiconductor device such as a semiconductor integrated circuit. Therefore, according to the present invention, it is possible to quickly detect the occurrence of an abnormality in the manufacturing process before manufacturing a large number of defective semiconductor devices, and to manufacture a high-quality semiconductor device at a low cost. Become.
  • the thin film manufacturing apparatus of the present invention is characterized in that the characteristic of the thin film is the thickness of the thin film. It is a sign.
  • the thin film measuring apparatus of the present invention it is possible to accurately determine whether or not a very thin thin film such as a seed layer is normally formed as designed, and the thin film can be determined with high quality and low cost. Can be manufactured.
  • the characteristics of the thin film such as the seed layer can be known without breaking. Therefore, it is also possible to know the characteristics of the seed layer formed at the bottom of the hole on the wafer surface, which could not be known by the conventional method using SEM.
  • characteristics of a thin film such as a seed layer include the thickness of the thin film, the distribution of the thickness, the appearance of grains, the three-dimensional shape, and the composition. It also includes various electrical properties of thin films.
  • the characteristics of the thin film can be known without destroying the measurement sample, it is possible to know the quality of thin film formation immediately after the end of the process. Therefore, the occurrence of defects in the manufacturing process can be known in a short time, defect improvement can be performed immediately, and the process can be returned to a good state in a short time.
  • the present invention it is possible to confirm the quality of a thin film on a product, which is impossible by a method using a conventional SEM. Therefore, the present invention can detect a process defect directly connected to a product. In addition, the present invention can improve the process before the failure occurs, and can increase the yield. In addition, according to the present invention, when a problem is found by measurement, a warning can be displayed using the information, or a display device can display that the measurement target wafer (measurement sample) is defective.
  • the predetermined manufacturing apparatus when the characteristic of the thin film formed on the measurement sample exceeds a predetermined control value, the predetermined manufacturing apparatus can be automatically stopped, and a defect can be created. It is also possible to upload the information to the host computer for manufacturing management. As a result, the yield can be improved.
  • the present invention can be applied to the measurement of characteristics of an extremely thin thin film such as a seed layer, and can be applied to the measurement of characteristics of other various thin films.
  • the present invention is provided at the bottom of the wafer hole. It is suitable for measuring characteristics of extremely thin and thin films such as the formed seed layer, and can be applied to measuring characteristics of various thin films formed in other places.
  • the present invention can be applied to a thin film or a multilayer film having a plurality of material forces in addition to a single thin film.
  • FIG. 1 is a diagram showing a configuration example of a thin film measuring apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a result of measurement according to a second embodiment of the present invention, and is a diagram showing a relationship between a seed layer thickness and a substrate current value.
  • FIG. 3A is a partial cross-sectional view of a measurement sample before forming a thin film according to a third embodiment of the present invention.
  • FIG. 3B is a partial cross-sectional view of the above measurement sample after forming a thin film.
  • FIG. 4A is a partial cross-sectional view of a measurement sample before forming a thin film according to the fourth embodiment of the present invention.
  • FIG. 4B is a partial cross-sectional view of the above measurement sample after formation of a thin film.
  • FIG. 5A is a partial cross-sectional view of a measurement sample before formation of a thin film or the like according to a fifth embodiment of the present invention.
  • FIG. 5B is a partial cross-sectional view of the above measurement sample after forming a thin film.
  • FIG. 6A is a partial cross-sectional view of a measurement sample before forming a thin film according to a sixth embodiment of the present invention.
  • FIG. 6B is a partial cross-sectional view of the above measurement sample after formation of a thin film.
  • FIG. 7A is a partial cross-sectional view of a measurement sample according to a seventh embodiment of the present invention.
  • FIG. 7B is a waveform diagram of the substrate current generated in the measurement sample same as above.
  • FIG. 8A is a plan view showing an electron beam scanning method according to a seventh embodiment of the present invention.
  • FIG. 8B is a waveform diagram of a substrate current generated by the electron beam scanning method same as above.
  • FIG. 9 is a diagram showing a semiconductor device manufacturing management apparatus according to a ninth embodiment of the present invention.
  • FIG. 10 is a cross-sectional view showing an example of a sample on which a seed layer is formed.
  • Electron beam source (probe irradiation means) 2 ... Condenser lens
  • FIG. 1 is a diagram showing an example of the overall configuration of a thin film measuring apparatus according to the first embodiment of the present invention.
  • the thin film measuring apparatus according to the present embodiment includes an electron beam source 1, a tray 5, an XY stage 6, a vacuum chamber 7, a current amplifier 8, a high voltage power source 9, and an electron gun 11. ing .
  • the electron gun 11 includes a condenser lens 2, an objective lens 3, an aperture 10, and a secondary electron detector 12.
  • the electron beam source (probe irradiating means) 1 emits an electron beam (probe) 13 with a constant energy.
  • the vacuum chamber 7 is for controlling the atmosphere so that the electron beam 13 can be emitted. Then, the electron beam 13 is illuminated in the vacuum chamber 7.
  • a measurement sample (sample) 4 that is irradiated and is to be measured, a tray 5 and an XY stage 6 are arranged.
  • the high-voltage power source 9 applies a high voltage necessary for the electron gun 11 to generate the electron beam 13 having a desired energy level.
  • the thin film measuring apparatus is provided with a control power source (not shown) for controlling a voltage for deflecting the electron beam 13.
  • the measurement sample 4 is an object to be measured, and corresponds to a semiconductor substrate such as a wafer during the semiconductor device manufacturing process.
  • the tray 5 supports the measurement sample 4 and also functions as an electrode for collecting the substrate current flowing through the measurement sample 4.
  • the XY stage 6 is a positioning mechanism for irradiating the electron beam 13 to a desired place. For the XY stage 6, one using a ball screw or one using ceramic vibration can be applied. In order to perform alignment more precisely, an optical microscope or a method of performing pattern matching using a secondary electron image obtained upon irradiation with the electron beam 13 may be applied as a positioning mechanism.
  • the current amplifier 8 is an amplifier circuit for measuring a current generated in the measurement sample 4 when the measurement sample 4 is irradiated with the electron beam 13.
  • the current amplifier 8 is connected to the measurement sample 4 via a tray (electrode) 5.
  • the current is continuously taken into the converter as a waveform and stored in the storage device as a function of the electron beam irradiation position.
  • the current amplifier 8 when the measurement sample 4 is irradiated with the electron beam 13, the current amplifier 8 can amplify a minute current generated in the measurement sample 4. As a result, according to the present embodiment, the measurement sample 4 can be measured with a very low noise and a minute current having a wide frequency band.
  • FIG. 2 is a view showing a substrate current measurement result according to the second embodiment of the present invention.
  • FIG. 2 shows the results of measuring the substrate current for a plurality of measurement samples 4 using the thin film measuring apparatus shown in FIG.
  • each of the plurality of measurement samples 4 has a seed layer formed on the surface of the wafer, and the thickness of the seed layer is changed for each measurement sample 4.
  • the horizontal axis of the graph of FIG. 2 is the thickness of the seed layer, and the vertical axis is the value of the substrate current flowing through the measurement sample 4 having the seed layer of that thickness.
  • the seed layer is formed prior to electrical plating for the purpose of attaching an electrical plating layer.
  • the seed layer has a thickness of several atomic layers and is very thin. The formation of the seed layer requires strict management because the quality of the subsequent plating process is determined by how the seed layer is applied.
  • copper is used as a seed layer.
  • a dense film called a diffusion layer is formed so that copper does not diffuse, such as a TiN film, SiN film, or tantalum film.
  • the amount of secondary electrons generated when the electron beam 13 is irradiated changes.
  • the TiN film generates a small amount of secondary electrons, but a large amount of it occurs in copper.
  • the precipitated copper seed contains impurities or has a different crystal orientation, it will also change.
  • the tip of the electron beam 13 can be reduced to several nm or less, such a narrow region can be measured.
  • an appropriate value is selected and used depending on the object to be measured.
  • the irradiation current value is usually in the order of several pA to nA.
  • 3A and 3B are partial cross-sectional views of a measurement sample according to the third embodiment of the present invention.
  • FIG. 3A and 3B are partial cross-sectional views of the measurement sample 4 shown in FIG.
  • the measurement sample 4 includes a Si substrate 41, an insulating film 42 formed on the Si substrate 41, and a hole 43 formed so as to penetrate the insulating film 42.
  • FIG. 3A shows the state of the measurement sample 4 before the seed layer 44 is formed.
  • FIG. 3B shows the state after the seed layer 44 is formed by the measurement sample 4 of FIG. 3A.
  • the seed layer 44 is a metal thin film used in a damascene process for creating a wiring, a via, a contact or the like in a semiconductor process.
  • Damascene process is a general term for technologies for making embedded wiring, vias, or contact structures by electrically attaching a conductor such as copper into a hole opened by etching.
  • the thin metal layer (seed metal) for this purpose is called the seed layer.
  • the seed layer 44 is formed by sputtering or CVD using a metal to be deposited as a target. When electroless plating is applied, tin or palladium may be used as a seed layer. Its thickness is on the order of several nm to several lOnm.
  • the seed layer 44 is formed in a hole 43 that is a hole provided in advance by etching or the like.
  • FIG. 3A shows a cross-sectional structure of a semiconductor device immediately after etching, for example. In this state, the seed layer 44 is still provided.
  • CD SEM refers to a case in which an electron beam 13 is irradiated onto a measurement site as shown in FIG. 1, and secondary electrons whose surface force is also emitted are detected by the secondary electron detector 12 in FIG. In this method, the dimensions of the part to be measured are measured without contact.
  • EBSCOPE is a technology that measures the substrate current using the thin-film measuring device shown in Fig. 1, and measures the characteristics of measurement sample 4 using the substrate current.
  • the seed layer is not necessarily uniform as described above, various directions can be used as necessary. It is desirable to try and measure as a whole. That is, when the surface of the measurement sample 4 is irradiated with the electron beam 13 being focused to a minimum, scanning is performed so that the minimum irradiation region moves on the surface of the sample 4. The scanning passes through the hole 43 and is preferably performed so as to cross various directional forces with respect to the hole 43. In addition, it is preferable to scan across each part of the hole 43.
  • FIG. 3B shows a state after the seed layer 44 is provided at the same place as FIG. 3A.
  • the hole top diameter c and bottom diameter d of hole 43 are precisely measured using CDSEM, EBSCOPE, etc. as described above.
  • FIGS. 4A and 4B are partial cross-sectional views of a measurement sample according to the fourth embodiment of the present invention.
  • FIGS. 4A and 4B the same components as those in FIGS. 3A and 3B are denoted by the same reference numerals.
  • FIG. 4A shows the state of the measurement sample 4 before the seed layer 44 is formed.
  • FIG. 4B shows a state after the seed layer 44 is formed for the measurement sample 4 in FIG. 4A.
  • the thickness of a thin film such as the seed layer 44 can be measured more precisely.
  • the feature of this embodiment is that before and after the seed layer 44 is formed by directly measuring the distance from the coordinate origin (measurement origin) 45a provided on the measurement sample 4 (for example, Ueno) to the hole edge. By comparing these distances, the thickness of the seed layer 44 formed in the hole 43 is measured.
  • the coordinate origin 45 that forms the origin of the absolute coordinate system is set on the measurement sample 4.
  • an alignment mark in the measurement sample 4 or a structure whose absolute position does not change even if the process progresses is used.
  • the recognition of these coordinate origins 45 is based on the present invention. This is an operation performed by the reference point specifying means.
  • the distance from the coordinate origin 45 to the edge of the hole 43 is measured in a state before the seed layer 44 is formed.
  • This measurement is performed using the measurement methods of the first to third embodiments. For example, measure the distance from the coordinate origin 45 to each of the edges XI, X2, X3, and X4, such as hole top edges XI and X4 and hole bottom edges ⁇ ⁇ ⁇ 2 and X3. These distances can be replaced by coordinates XI, X2, X3, X4.
  • a seed layer 44 is formed, and the distance from the coordinate origin 45 to each edge X5, X6, X7, X8 is measured in this state.
  • hole top edges X5 and X8 and hole bottom edges X6 and X7 are measured. These distances can also be replaced by coordinates X5, X6, X7, X8.
  • the difference between the edge distances measured in the absolute coordinate system that is, the hole top edge XI (first edge) before forming the seed layer 44 and the hole top after forming the seed layer 44.
  • the difference between the edge X5 (second edge) of the hole and the edge X2 of the hole bottom before forming the seed layer 44 and the edge X6 of the hole bottom after forming the seed layer 44 is calculated.
  • the calculation of these differences is an operation performed by the characteristic extraction unit of the present invention.
  • the film thickness on the left side of the hole top is obtained from edge (coordinate) X5-edge (coordinate) XI
  • the film thickness on the right side of the hole top part is obtained from edge (coordinate) X4 -edge (coordinate) X8. It is done.
  • the film thickness on the left side of the hole bottom can be obtained from edge (coordinate) X6-edge (coordinate) X2
  • the film thickness on the right side of the hole bottom can be obtained from edge (coordinate) X3-edge (coordinate) X7.
  • the shape of the hole 43 is not necessarily symmetrical! /, So by calculating the edge length in various directions as necessary, the shape of the seed layer 44 formed in the hole 43 is The thickness in various directions can be measured.
  • FIGS. 5A and 5B are partial cross-sectional views of a measurement sample according to the fifth embodiment of the present invention.
  • FIGS. 5A and 5B the same components as those in FIGS. 3A and 3B are denoted by the same reference numerals.
  • FIG. 5A shows the state of the measurement sample 4 before the seed layer 44 and the metal 46 are formed.
  • FIG. 5B shows the state after forming the seed layer 44 and the metal 46 for the measurement sample 4 in FIG. 5A.
  • the edge of the thin film forming the semiconductor device cannot be seen from the surface.
  • the hole 43 is formed by hole etching, the seed layer 44 is formed, the metal 46 is buried in the hole 43, and then polishing such as CMP is performed so that the edge portion of the seed layer 44 is made of silicon. It comes out on the wafer surface (see Figure 5B).
  • the surface of the seed layer 44 can be obtained by performing EBSCOPE observation using CDSEM or substrate current.
  • the thickness of the top part of the hole 43 at can be measured. More specifically, the hole edge portion is scanned in a straight line with the electron beam 13 narrowed down by the thin film measuring apparatus shown in FIG. 1 on the measurement sample 4 in the state shown in FIG. 5B. Then, a secondary electron waveform or a substrate current waveform is obtained. Since the buried metal 46 and the seed layer 44 have different material structures, changes occur in how secondary electrons are emitted and how the substrate current flows. This change occurs at material boundaries. Therefore, the thickness e and f of the seed layer 44 can be obtained by performing this waveform force edge extraction. The same effect can be obtained by using other means such as AFM to measure the surface distance.
  • FIGS. 4A and 4B are partial cross-sectional views of a measurement sample according to the sixth embodiment of the present invention. 6A and 6B, the same components as those in FIGS. 4A and 4B are denoted by the same reference numerals.
  • FIG. 6A shows the state of the measurement sample 4 before the seed layer 44 is formed.
  • FIG. 6B shows a state after the seed layer 44 is formed for the measurement sample 4 in FIG. 6A.
  • CMP is a process for planarizing the semiconductor surface. Normally, alignment marks etc. provided on the wafer are uneven. It is often formed of a structure. However, when the CMP process is performed, the wafer surface is polished flat and the alignment mark disappears.
  • a coordinate origin (alignment mark or the like) 450 at a position deeper than the surface of the wafer, the disappearance of the reference is prevented, and an absolute coordinate system measurement is possible.
  • the impurity concentration in a silicon wafer changes, the amount of secondary electrons and the amount of substrate current generated by electron beam irradiation are affected by the change. Therefore, coordinates that form a reference mark by introducing impurities having a different polarity from the material around the reference object (around the position where the coordinate origin 450 is formed) into the silicon wafer by diffusion or ion implantation.
  • the origin 450 is made in the silicon wafer. Metal may be embedded. A simple hole may be acceptable.
  • the coordinate origin 450 can be clearly detected by electron beam irradiation, and functions as a reference mark even if the surface of the silicon wafer is polished flat by CMP or the like. Can do.
  • FIG. 7A is a partial sectional view of a measurement sample according to the seventh embodiment of the present invention.
  • FIG. 7B is a waveform diagram of the substrate current generated in the measurement sample of FIG. 7A. 7A and 7B, the same components as those in FIGS. 3A and 3B are denoted by the same reference numerals. This embodiment is described with reference to a method for directly obtaining the seed layer 44 film thickness profile.
  • the thickness of the seed layer 44 is on the order of several nanometers
  • the output of secondary electrons and substrate current changes according to the thickness, and the amount of transmitted electron beam changes.
  • the seed layer 44 is thin. In this case, electrons pass through the seed layer 44 and the insulating film 42 To reach.
  • the seed layer 44 functions as an electrode of a kind of capacitor, and has a function of flowing current by forming an electric capacity between the seed layer 44 and the silicon substrate.
  • the capacitor is composed of an insulating film 42 and a seed layer 44 and a silicon member sandwiching the insulating film 42. Is done.
  • the electron beam 13 is squeezed finely onto the seed layer 44, and the signal waveform of the substrate current generated by this irradiation is used as a function of the electron beam irradiation position. Observe. Then, as shown in FIG. 7B, the thickness distribution of the seed layer 44 can be known.
  • the seed layer 44 may be formed in a grain shape.
  • a wave is generated in the current waveform.
  • the size of the grain can be estimated.
  • a management value can also be set for the size of the grain. For example, a grain having a size of lOnm or more can be judged as good or bad by setting a management value as defective.
  • FIG. 8A and 8B are diagrams showing an eighth embodiment of the present invention.
  • FIG. 8A is a plan view showing an electron beam scanning method for a measurement sample.
  • FIG. 8B is a diagram showing a substrate current or an output waveform of secondary electrons generated when scanned by the method of FIG. 8A.
  • measurement is performed by scanning a measurement sample with an electron beam two-dimensionally to obtain a two-dimensional distribution of a seed layer formed on the hole bottom.
  • FIG. 8A and FIG. 8B show the substrate current obtained by scanning the entire portion of the hole 43 in which the seed layer 44 is formed as shown in FIG. 6B, for example, with a focused electron beam.
  • the signal is displayed as a function of scanning position.
  • the positions X10, X20, and Y10 on the coordinates in FIG. 8B correspond to the positions X10, X20, and Y10 on the measurement sample in FIG. 8A.
  • the waveforms (nl, n2, n3, n4, n5, n6) in FIG. 8B correspond to the scanning lines nl, n2, n3, n4, n5, n6 on the measurement sample in FIG. 8A.
  • the actual height distribution of the seed film can be measured by converting the resulting substrate current value into a height.
  • FIG. 9 is a diagram showing a semiconductor device manufacturing management apparatus according to the ninth embodiment of the present invention.
  • the In this embodiment an example of managing the seed layer formation process by using the measurement result obtained by any of the first to eighth embodiments in the semiconductor manufacturing process will be described. Show me.
  • the Cu seed layer is formed by sputtering or CVD with respect to holes obtained by etching.
  • the thickness of the Cu seed layer is several nm, and the seed layer is uniformly formed on the bottom of the hole.
  • the seed layer may not be deposited uniformly due to incorrect recipe settings, abnormal equipment, or abnormal previous processes. In this case, if the process is continued, the plating is not formed normally, leading to defects. Therefore, it is important to be able to grasp the condition of the seed layer immediately after the seed layer formation process.
  • the characteristics of the seed layer can be measured in-line and non-destructively. For example, after the etching is completed, the hole top diameter and the bottom diameter of the hole A formed on the measurement sample to be managed are first measured and stored. Next, a seed layer is formed on the measurement sample. Then, the hole top diameter and bottom diameter of the same hole A as in the above measurement are measured and stored. These measurements and storage are performed by an electron beam irradiation device 101, a substrate current measurement device 102, and a substrate current waveform storage device 103 corresponding to the thin film measurement device of FIG. Next, the measured value force thin film thickness extracting device 104 calculates the thickness of the seed layer (thin film). That is, the thin film thickness extracting device 104 constitutes the characteristic extracting means of the present invention. These measured values and film thicknesses are stored in a storage device such as a computer and sent to the pass / fail information generator 107.
  • the pass / fail information generating apparatus 107 can determine pass / fail of the process by comparing the measured value and film thickness sent to the control value.
  • the management value is set by the management reference value setting device 105 and stored in the management reference value storage device 106. Then, the management value stored in the management reference value storage device 106 is taken into the pass / fail information generation device 107 as necessary.
  • the pass / fail information generator 107 determines that the measurement sample is non-defective when the measured value is within the range of the control value, and determines that it is defective otherwise. Also pass or fail If necessary, the information generator 107 generates information indicating that the measurement sample or measurement location is non-defective if it is determined to be non-defective, and if it is determined to be defective, the information generation device 107 indicates that the measurement location is non-defective or the measurement sample is defective. Generates information indicating that a good product is included. Based on these pieces of information, information indicating pass / fail judgment is displayed on the pass / fail display device having the power of the display device.
  • the pass / fail information generating apparatus 107 transmits information indicating pass / fail judgment to the manufacturing apparatus control apparatus 108 which is a computer that manages the semiconductor device manufacturing apparatus.
  • the manufacturing apparatus control apparatus 108 controls the manufacturing apparatus to automatically stop, enter a maintenance mode, change a set value, and the like based on the transmitted and uploaded information indicating the quality determination.
  • the hole edge after the etching measured using the absolute value criterion and the hole edge and force measured using the absolute value criterion after forming the seed layer are also used.
  • a method for measuring the thickness of the film can also be used. Then, the quality of the seed layer is judged by comparing the measured value with the management value.
  • a thin film measuring apparatus using an electron beam has been described.
  • the present invention is not limited thereto, and the present invention is applied to a thin film measuring apparatus using an ion beam, various electromagnetic waves, a probe, or the like. Can also be applied.
  • the present invention is useful for a thin film measuring apparatus, a thin film measuring method, and a thin film manufacturing method used for inspection, manufacturing, measurement, or evaluation in a semiconductor device or its manufacturing process.
  • the present invention can be applied to a thin film measuring apparatus, a thin film measuring method, and a thin film manufacturing method using a method of irradiating a semiconductor substrate such as a wafer with an electron beam, light, electromagnetic wave, or ion beam.

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L’invention concerne un appareil de mesure de film mince permettant de mesurer un courant très faible s’écoulant dans un échantillon de mesure comme un substrat semi-conducteur par irradiation de sondes de faisceaux électroniques ou similaire et de détecter les caractéristiques d’un film mince comme une couche d’ensemencement sans détruire l’échantillon. Elle concerne également un procédé de mesure de film mince et un procédé de fabrication de film mince. L’appareil de mesure de film mince est pourvu d’un moyen de mesure d’un courant de substrat généré dans l’échantillon de mesure lorsque l’échantillon de mesure est irradié par des faisceaux à sonde électronique ou similaire. L’appareil de mesure de film mince est caractérisé en ce qu‘il est doté d’un moyen de mesure des caractéristiques du film mince sur la base du courant du substrat avant de former le film mince sur l’échantillon de mesure et du courant du substrat après la formation du film mince sur l’échantillon de mesure.
PCT/JP2005/011136 2005-06-17 2005-06-17 Appareil de mesure de film mince, procédé de mesure de film mince et procédé de fabrication de film mince WO2006134662A1 (fr)

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PCT/JP2005/011136 WO2006134662A1 (fr) 2005-06-17 2005-06-17 Appareil de mesure de film mince, procédé de mesure de film mince et procédé de fabrication de film mince

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PCT/JP2005/011136 WO2006134662A1 (fr) 2005-06-17 2005-06-17 Appareil de mesure de film mince, procédé de mesure de film mince et procédé de fabrication de film mince

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105814676A (zh) * 2013-12-10 2016-07-27 信越半导体株式会社 单晶硅基板的缺陷浓度评价方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185970A (ja) * 1989-01-12 1990-07-20 Ishikawajima Harima Heavy Ind Co Ltd 蒸着装置用の膜厚計
JP2004235464A (ja) * 2003-01-30 2004-08-19 Fab Solution Kk 半導体デバイス解析装置および解析方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185970A (ja) * 1989-01-12 1990-07-20 Ishikawajima Harima Heavy Ind Co Ltd 蒸着装置用の膜厚計
JP2004235464A (ja) * 2003-01-30 2004-08-19 Fab Solution Kk 半導体デバイス解析装置および解析方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105814676A (zh) * 2013-12-10 2016-07-27 信越半导体株式会社 单晶硅基板的缺陷浓度评价方法

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