WO2006131087A1 - Corps semi-conducteur a couche mince - Google Patents

Corps semi-conducteur a couche mince Download PDF

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Publication number
WO2006131087A1
WO2006131087A1 PCT/DE2006/000717 DE2006000717W WO2006131087A1 WO 2006131087 A1 WO2006131087 A1 WO 2006131087A1 DE 2006000717 W DE2006000717 W DE 2006000717W WO 2006131087 A1 WO2006131087 A1 WO 2006131087A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor body
layer
thin
radiation
film semiconductor
Prior art date
Application number
PCT/DE2006/000717
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German (de)
English (en)
Inventor
Volker HÄRLE
Stefan Bader
Berthold Hahn
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2006131087A1 publication Critical patent/WO2006131087A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures

Definitions

  • the invention relates to a thin-film semiconductor body and a method for its production.
  • Radiation-producing semiconductor bodies are often made of semiconductor materials whose refractive index is relatively high compared to a surrounding medium, for example air. In the decoupling of the radiation generated in the semiconductor body can thus occur at an interface between the semiconductor body and the surrounding medium from a certain critical angle total reflection, resulting in a significantly lower proportion auskoppelbarer radiation.
  • German Offenlegungsschrift DE 103 40 271 A1 discloses a thin-film light-emitting diode chip with improved radiation decoupling, in which a structured layer is arranged on a radiation decoupling surface.
  • the structured layer has a grid whose lateral dimension is smaller than a wavelength of a radiation emitted from the chip.
  • US Pat. No. 5,779,924 discloses a light-emitting semiconductor component with improved radiation decoupling which has a regularly structured interface.
  • the distance between the individual elements of the structure may be in the range of a wavelength of the light generated in the component.
  • a further object of the present invention is to specify a production method for such a thin-film semiconductor body. This object is achieved by a method according to claim 23.
  • the thin-film semiconductor body comprises an active layer provided for generating radiation, a radiation output surface arranged downstream of the active layer, and a reflection layer arranged on the side of the active layer facing away from the radiation coupling surface, the thin-film semiconductor body having a photonic crystal.
  • the thin-film semiconductor body is characterized in particular by at least one of the following characteristic features:
  • the active layer is part of a radiation-generating epitaxial layer sequence
  • the reflection layer which reflects back at least part of the electromagnetic radiation generated in the epitaxial layer sequence, is applied or formed on a first main surface of the epitaxial layer sequence facing a carrier;
  • the reflection layer is formed as a Bragg mirror, it may also be part of the Epitaxie WegenUSD;
  • the epitaxial layer sequence has a thickness in the range of 20 ⁇ m or less, in particular in the range between 4 ⁇ m and 10 ⁇ m;
  • the epitaxial layer sequence comprises at least one semiconductor layer having at least one surface which has a mixing structure which, in the ideal case, leads to an approximately ergodic distribution of the light in the epitaxial layer sequence, i. it has as ergodically stochastic scattering behavior as possible.
  • the thin-film semiconductor body is understood in particular to mean a semiconductor body which has a layer structure with epitaxially grown layers, from which preferably the growth substrate has been removed after growth. At least part of the epitaxially grown layers are semiconductor layers.
  • the thin-film semiconductor body has a photonic crystal.
  • the photonic crystal can be arranged in a second semiconductor layer formed on one side of the active layer facing away from the reflection layer.
  • the second semiconductor layer may be arranged downstream of a coupling-out layer, which preferably contains a semiconductor material, in which the photonic crystal is arranged or formed.
  • a light beam emanating from the semiconductor body is then totally reflected at the interface between the optically denser semiconductor material having a refractive index nl and the surrounding optically thinner medium, for example air, having a refractive index n2 when it strikes the interface at an angle greater than or is equal to the critical angle ⁇ of the total reflection, where:
  • the photonic crystal provided for the thin-film semiconductor body may advantageously cause a portion of the radiation incident on the photonic crystal at an angle equal to or greater than the critical angle ⁇ to be deflected at an angle smaller than the critical angle ⁇ impinges on the radiation decoupling surface and thus can decouple.
  • the photonic crystal comprises a plurality of first regions having a first refractive index and a plurality of second regions having a second refractive index.
  • the areas are arranged regularly.
  • the photonic crystal may have the structure of a two-dimensional lattice. In this case, the distance between two adjacent first regions or two adjacent second regions corresponds to the lattice constant. The photonic crystal can only achieve its effect if the lattice constant is adapted, on the one hand, to a wavelength of the radiation generated by the thin-film semiconductor body, and, on the other hand, to a distance between the active layer and the photonic crystal.
  • the distance between two adjacent first regions or two adjacent second regions corresponds approximately to the wavelength of the radiation generated by the thin-film semiconductor body. Particularly preferred is the distance between 10 ⁇ 9 m and ICT 6 m.
  • the first regions may on the one hand be formed by depressions in a periodic arrangement in the second semiconductor layer or in the coupling-out layer. On the other hand, it is possible to periodically arrange the regions themselves in a lattice-like manner, wherein these are formed in the manner of islands and are separated from one another by suitable intermediate spaces, for example a coherent depression.
  • the second possibility thus represents the inversion of the first possibility, in that the regions and the depressions are interchanged.
  • the recesses or interspaces may advantageously be filled with a filling material, for example a dielectric or another semiconductor material, whose refractive index differs from the refractive index of the first region.
  • the thin-film semiconductor body has a suitable distance between the active layer and the reflection layer in addition to a photonic crystal.
  • the distance is preferably chosen such that a radiation emitted by the active layer in the direction of the radiation coupling-out surface interferes with a radiation reflected by the reflective layer.
  • Radiation characteristic with at least one preferred direction As a result, the proportion of the radiation which can be coupled out can be further increased.
  • the radiation generated by the active layer and the radiation reflected by the reflective layer can constructively interfere with certain distances between the active layer and the reflective layer. For example, occur at a perpendicular to the radiation decoupling surface incident radiation intensity maxima, when the distance between the active layer and the reflection layer (2m + l) ⁇ / 4n, where n is the refractive index of the semiconductor body and m is 0, 1, 2 ... indicates the order of decoupling.
  • n the refractive index of the semiconductor body
  • m is 0, 1, 2 ... indicates the order of decoupling.
  • In the 0th order decoupling all photons are emitted into a cone whose axis of rotational symmetry is substantially perpendicular to the radiation decoupling surface.
  • the first-order decoupling there is an additional emission lobe with a larger angle to the normal of the decoupling surface.
  • the distance between the active layer and the reflection layer which is substantially (2m + 1) ⁇ / 4, for example, radiation with a preferred direction is achieved whose emission characteristic deviates from a Lambertian radiation characteristic and the areas arranged alternately having a high and a low intensity.
  • the distance between the reflection layer and the active layer can be chosen such that the emission characteristic within the semiconductor body can also be adjusted so that the incident angle is smaller than the critical angle of total reflection at the intensity maximum associated with the intensity maxima already at the first impingement on the radiation coupling-out surface.
  • the photonic crystal While taking into account the appropriate distance without use of the photonic crystal substantially zeroth and the 1st order come to the coupling, by means of the photonic crystal advantageously additionally decoupling the 2nd order or a higher order. In this case, the photonic crystal must be matched to the 1st and 2nd order and possibly higher orders of the radiation.
  • the active layer has a plurality of partial layers, for example in the form of a single quantum well or a multiple quantum well structure.
  • the thin-film semiconductor body has at least a first semiconductor layer of a first conductivity type, which is arranged between the active layer and the reflection layer, and at least the second semiconductor layer of a second conductivity type.
  • the first semiconductor layer is preferably p-type
  • the second semiconductor layer is preferably n-type.
  • the semiconductor layers are particularly preferably transparent to the radiation generated in the active layer.
  • the thin-film semiconductor body may, for example, comprise a barrier layer which is arranged between the first semiconductor layer and the reflection layer and acts, for example, as a charge carrier diffusion barrier, which prevents or at least reduces the emergence of charge carriers from the first semiconductor layer in the direction of the reflection layer.
  • the charge carrier barrier layer is preferably at least partially semiconductive and may contain aluminum in one variant.
  • the carrier barrier layer is preferably transparent to the radiation generated in the active layer.
  • the n-type second semiconductor layer is preferably epitaxially deposited.
  • the active layer or partial layers of the active layer preferably the p-conducting first semiconductor layer and optionally a charge carrier barrier layer are epitaxially grown in succession.
  • the reflective layer is preferably applied by sputtering or vapor deposition.
  • the reflection layer is preferably a metal layer.
  • the reflective layer is preferably highly reflective, using e.g. at least 70%, preferably at least 80% of the incident radiation reflects.
  • the reflective layer contains, for example, silver, gold, platinum or aluminum and / or an alloy containing at least two of these metals.
  • the reflection layer may also be a multi-layer sequence having multiple layers of various of the aforementioned metals and alloys.
  • the reflection layer may be formed as a Bragg mirror.
  • the layer composite comprising the epitaxial layer sequence, the growth substrate and the reflection layer is preferably firmly bonded to a support by eutectic bonding, which may be optimized in terms of electrical and / or thermal properties and to the optical properties, such as its transparency, no particular Requirements are made.
  • the carrier is preferably electrically conductive or at least semiconducting. Suitable carrier materials are, for example, germanium, gallium arsenide, silicon carbide, aluminum nitride or silicon. One of the reflective layer facing surface of the carrier is preferably planar. The growth substrate is detached from the semiconductor body after the connection of the layer composite with the carrier.
  • At least one adhesion-promoting layer can be provided between the reflection layer and the carrier.
  • the preferably electrically conductive adhesion-promoting layer connects the carrier to the layer composite, the reflection layer facing the carrier.
  • the adhesion-promoting layer may be a metal layer of, for example, PdSn (solder), AuGe, AuBe, AuSi, Sn, In or PdIn.
  • the reflective layer may be protected by a diffusion barrier layer disposed between the reflective layer and the primer layer containing, for example, Ti and / or W. A diffusion barrier layer prevents penetration of material from the primer layer into the reflective layer.
  • the second semiconductor layer can be arranged downstream of a further layer which serves as Auskoppel für.
  • the photonic crystal is arranged in the coupling-out layer.
  • the wavelength of the coupled-out radiation can be in the infrared range, visible range or ultraviolet range.
  • the semiconductor body can be produced on the basis of different semiconductor material systems.
  • a semiconductor body based on ln x GayAli_ x _yAs for visible red to yellow radiation, for example, a semiconductor body based on In x GayAli_ x _yP and for short-wave visible (green to blue) or UV radiation, for example, a semiconductor body based on In x GayAli_ x _yN suitable, where 0 ⁇ _ x ⁇ 1 and 0 ⁇ y ⁇ 1.
  • the semiconductor body contains GaN or at least one GaN compound such as AlGaN, InGaN or InAlGaN.
  • the distance between the first reflective layer and the active layer corresponds to the thickness of the first semiconductor layer.
  • the distance between the first reflection layer and the active layer is less than 2 ⁇ , where ⁇ . is the wavelength of the radiation generated in the semiconductor body.
  • the anti-reflection structure is formed by regularly arranged structural elements, for example in the form of so-called moth eyes.
  • the structural elements can be arranged between two first or second regions.
  • the lateral dimension between two adjacent structural elements is smaller than the wavelength of the radiation emitted by the semiconductor body.
  • the thin-film semiconductor body may comprise an optical resonator.
  • a thin-film semiconductor body can be, for example, a thin-film MCLED (thin-film micro cavity LED).
  • a thin-film semiconductor body having an optical resonator has a second reflection layer on the second semiconductor layer.
  • the emission direction of the semiconductor body typically runs parallel to the axis of a resonator thus formed from the first and second reflection layers.
  • the first reflection layer is highly reflective, while the second reflection layer can be transmissive or semitransparent for transmission of the radiation.
  • the radiation has a main emission direction, wherein the spectral width is advantageously low.
  • Both the first and the second reflection layer may be formed as a multilayer sequence.
  • the reflection layers contain a metal or another reflection-increasing material.
  • one of the active layer downstream radiation coupling surface, with a photonic crystal and arranged on the side facing away from the radiation decoupling side of the active layer reflection layer is applied or formed on a wall facing a carrier first major side of a radiation-generating epitaxial layer sequence, a reflection layer or at least a part of the epitaxial layer sequence electromagnetic radiation generated in this reflected back and a remote from the carrier second main side, which forms the later radiation decoupling surface is provided with a photonic crystal.
  • a decoupling layer is present on the side of the semiconductor body facing away from the first reflection layer, in which recesses can be introduced in order to form a photonic crystal.
  • the depressions can be introduced into the uppermost layer of the epitaxial layer sequence lying opposite the first reflection layer, preferably into the second semiconductor layer.
  • etching processes can be used to produce the depressions.
  • an embossing process for example a nanoimprint process, is used to transfer a shape of the depressions into the layer provided for the photonic crystal.
  • the nanoimprint process is particularly suitable for micro and nano structures. Furthermore, it is suitable for low-cost mass production.
  • a stamp on a stamp surface is a negative of the desired later form of the Recesses, pressed into a arranged on the semiconductor body layer of low viscosity.
  • the layer structured in this way serves as a mask for structuring the layer provided for the photonic crystal.
  • the structuring is preferably carried out by means of etching.
  • the semiconductor body may be patterned by laser beam exposure. Subsequently, the mask can be detached.
  • the recesses formed in this way can be filled with a filling material.
  • the refractive index of the filler differs from the refractive index of the surrounding layer.
  • the manufacturing method according to the invention has the advantage that a roughening associated with a connection region is eliminated, whereby an improved processability of the connection region is achieved.
  • FIG. 1 shows a schematic cross-sectional view of a first exemplary embodiment of a thin-film semiconductor body according to the invention
  • FIG. 2 shows a schematic cross-sectional view of a second exemplary embodiment of a thin-film semiconductor body according to the invention.
  • FIG. 3 shows a schematic cross-sectional view of a third exemplary embodiment of a thin-film semiconductor body according to the invention
  • FIG. 5 is a diagram of a simulation of a
  • FIG. 6 shows a schematic cross-sectional view of a fourth exemplary embodiment of a thin-film semiconductor body according to the invention
  • FIG. 7 shows a schematic cross-sectional view of a fifth exemplary embodiment of a thin-film semiconductor body according to the invention
  • FIG. 8 shows a schematic cross-sectional view of a radiation-emitting component with a thin-film semiconductor body according to the invention.
  • FIG. 1 schematically shows a thin-film semiconductor body 1 according to the invention.
  • This comprises by way of example four layers: a reflection layer 6, a first semiconductor layer 5, an active layer 4 and a second semiconductor layer 3.
  • a photonic crystal 7 is arranged in the second semiconductor layer 3 on the side facing away from the active layer 4 side, ie on the part of the radiation decoupling surface 21, a photonic crystal 7 is arranged.
  • the photonic crystal has regions 7a with a first refractive index and regions 7b with a second refractive index. While the regions 7b are formed of a same semiconductor material as the second semiconductor layer 3, the regions 7a are formed as recesses in the second semiconductor layer 3 and filled with a filler having a refractive index different from the semiconductor material.
  • the regions 7a are cylindrical. But any other form is conceivable.
  • the regions 7a are regularly arranged in the second semiconductor layer 3, so that a two-dimensional lattice results due to this arrangement.
  • Radiation 22, 23, which is generated in the active layer 4, can couple in directly into the second semiconductor layer 3 and reach the radiation decoupling surface 21.
  • the radiation such as the beam 29 illustrated, can reach the radiation decoupling surface 21 when it is first emitted by the active layer 4 in the direction of the reflection layer 6 and then reflected in the direction of the radiation decoupling surface 21.
  • the portion of the radiation which impinges on the radiation coupling-out surface 21 at an angle smaller than the limit angle ⁇ of the total reflection can leave the semiconductor body 1 on the first impact, as illustrated, for example, by the beam 22.
  • the proportion of the radiation which impinges at an angle greater than or equal to the critical angle of total reflection on the radiation coupling surface 21, such as the Beam 23 illustrates, would be totally reflected in a conventional semiconductor body at the first impact.
  • the photonic crystal 7 folds the beam 23 into a beam 24 by a folding process, represented by a flip-over vector 20, which then impinges on the radiation coupling-out surface 21 at an angle smaller than the angle ⁇ of the total reflection.
  • the flip-over process corresponds to statistical scattering in the photon image, whereby the wave vector of a photon can "turn around” due to the interaction with the lattice.
  • the likelihood of a flip-over depends on the photonic crystal and the energy and direction of the photon.
  • the direction of failure of the rays can collapse, which impinge on the photonic crystal 7 at an angle equal to or greater than the critical angle ⁇ , so that they impinge on the radiation coupling-out surface 21 at an angle smaller than the critical angle ⁇ and can thus decouple.
  • the beam 24 passes partially through the
  • Radiation decoupling surface 21 through what is represented by the beam 25, in part, it is reflected at the radiation decoupling surface 21, which is represented by the beam 26. It should be noted that the proportion of the reflected radiation corresponding to the beam 26 is considerably lower than the fraction reflected in a total reflection.
  • the effect of the photonic crystal 7 is comparable to an increase in the critical angle of total reflection.
  • the illustrated in Figure 2 embodiment of a thin-film semiconductor body 1 according to the invention corresponds to the embodiment shown in Figure 1 except for a further feature.
  • the further feature are structural elements 13, which are designed in the form of so-called moth eyes, which are regularly arranged in the regions 7b.
  • an anti-reflection structure formed in this way the proportion of the radiation which can be coupled out can be further increased. Because of the already mentioned almost continuous transition of the refractive index, starting from the regions 7a to the structural elements 13, a lesser proportion of the radiation upon the first impingement on the
  • Radiation decoupling surface 21 is reflected back into the semiconductor body.
  • a region 27 between two interference maxima 28 can be homogeneously illuminated.
  • FIG. 3 shows a third exemplary embodiment of a thin-film semiconductor body 1 according to the invention which has a carrier 9 and a multilayer structure 16. Between the carrier 9 and the multi-layer structure 16, an adhesion-promoting layer 8 is arranged.
  • the multilayer structure 16 comprises a light-emitting active layer 4 which is arranged between a p-type first semiconductor layer 5 and an n-type second semiconductor layer 3.
  • the first semiconductor layer 5 is arranged between the active layer 4 and a metallic reflection layer 6.
  • the electrically conductive reflection layer 6 functions both as a mirror and as an electrical contact layer to the first semiconductor layer 5.
  • the reflection layer 6 is protected by a diffusion barrier layer 12 which is arranged between the reflection layer 6 and the adhesion-promoting layer 8.
  • the second semiconductor layer 3 is followed by a decoupling layer 2, which has a photonic crystal 7 with the periodically arranged regions 7a and 7b.
  • the second semiconductor layer 3, the active layer 4 and the first semiconductor layer 5 are successively epitaxially formed on a growth substrate, not shown here.
  • the reflection layer 6 is applied by sputtering or vapor deposition.
  • the multilayer structure 16 is connected by means of the adhesion-promoting layer 8 to the support 9, which consists for example of germanium or comprises a substantial part of germanium. The growth substrate is then removed.
  • the main emission direction of the radiation generated in the active layer 4 and the radiation reflected by the reflection layer 6 is indicated in FIG. 3 by the arrows 10 and 11, respectively. This is due to the interference of the Both radiation components 10 and 11 generated light passes through the radiation coupling-out surface 21 from the thin-film semiconductor body 1 out.
  • the radiation characteristic can be adjusted so that at least the 0th and 1st order meet at an angle to the radiation decoupling surface 21, which is below the angle ⁇ of the total reflection, so that the radiation can decouple. Furthermore, by means of the photonic crystal 7 by folding processes, the second-order radiation and possibly higher orders can be decoupled from the semiconductor body 1.
  • FIGS. 4a and 4b show intensity distributions of two radiation-emitting thin-film semiconductor bodies with a smooth radiation coupling surface and without a photonic crystal based on GaN, the thin-film semiconductor bodies having a different spacing d.
  • FIG. 4 a shows the intensity distribution of a thin-film semiconductor body whose distance between the active layer 4 and the reflection layer 6 is approximately 155 nm.
  • the distance is set to be resonant, and constructive interference may occur in the main emission direction.
  • an interference maximum of 0th and 1st order may occur, with the maximum of the 0th order occurring at an angle of approximately 0 °.
  • the 0 and 1st order interference maxima are not clearly distinguishable due to their width.
  • the distance of the thin-film semiconductor body whose intensity distribution is shown in FIG. 4b is set so that destructive interference occurs in the forward direction.
  • the distance between the active layer 4 and the reflection layer 6 is about 180 nm.
  • FIG. 5 shows a simulation of a coupling-out efficiency, that is to say the ratio of the proportion of the coupled-out radiation to the radiation generated, with respect to the distance d.
  • the 2nd order can be decoupled by deflecting rays that hit the photonic crystal at an angle greater than or equal to 24 ° in such a way that they can be deflected impinge on the radiation decoupling surface 21 at an angle smaller than 24 °.
  • the carrier barrier layer 15 is preferably part of the semiconductor body 1 and therefore epitaxially grown and semiconducting.
  • a Decoupling layer 2 with a photonic crystal 7 is arranged on the second semiconductor layer 3 .
  • structural elements for forming an antireflective structure may be arranged between the regions 7a in accordance with the second embodiment shown in FIG.
  • the fifth exemplary embodiment shown in FIG. 7 corresponds to a micro cavity (resonant cavity LED).
  • the fifth exemplary embodiment has a second reflection layer 14 on the second semiconductor layer 3.
  • the distance f between the first reflection layer 6 and the second reflection layer 14 is set resonantly.
  • the distance f corresponds to the wavelength of the radiation emitted by the active layer 4.
  • the interference effects already mentioned in connection with FIG. 3 apply to the interference effects occurring in the semiconductor body 1.
  • FIG. 8 shows an optical component which comprises a packaged thin-film semiconductor body 1, for example according to the embodiments presented in FIGS. 1 to 5.
  • the semiconductor body 1 is mounted on a lead frame 17 and installed in a recess of the housing 18.
  • the recess of the housing 18 preferably has a radiation-reflecting surface.
  • the semiconductor body 1 is encapsulated with a potting compound 19.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

La présente invention concerne un corps semi-conducteur à couche mince (1) comprenant une couche active (4) qui sert à produire un rayonnement, une surface de sortie de rayonnement (21) appliquée après la couche active, une couche de réflexion (6) appliquée sur le côté de la couche active (4), opposé à la surface de sortie de rayonnement (21), le corps semi-conducteur à couche mince (1) présentant également un cristal photonique (7). L'invention a également pour objet un procédé pour réaliser un corps semi-conducteur à couche mince (1) qui présente un cristal photonique (7).
PCT/DE2006/000717 2005-06-10 2006-04-25 Corps semi-conducteur a couche mince WO2006131087A1 (fr)

Applications Claiming Priority (4)

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DE102005026895 2005-06-10
DE102005026895.1 2005-06-10
DE102005048408.5 2005-10-10
DE102005048408.5A DE102005048408B4 (de) 2005-06-10 2005-10-10 Dünnfilm-Halbleiterkörper

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WO2009095748A2 (fr) * 2007-12-19 2009-08-06 Koninklijke Philips Electronics N.V. Dispositif d'émission de lumière à semi-conducteurs ayant des structures d'extraction de lumière
DE102008021621A1 (de) * 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Strahlung emittierender Dünnfilm-Halbleiterchip
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US8247259B2 (en) 2007-12-20 2012-08-21 Osram Opto Semiconductors Gmbh Method for the production of an optoelectronic component using thin-film technology
EP2360730A3 (fr) * 2010-02-23 2015-01-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Composant semi-conducteur doté d'une structure photonique et possibilités d'utilisation
WO2015121205A1 (fr) * 2014-02-11 2015-08-20 Osram Opto Semiconductors Gmbh Composant optoélectronique comprenant une succession de couches réfléchissantes et procédé de réalisation d'une succession de couches réfléchissantes
US11041983B2 (en) 2018-12-21 2021-06-22 Lumileds Llc High brightness directional direct emitter with photonic filter of angular momentum
US11204153B1 (en) 2021-02-22 2021-12-21 Lumileds Llc Light-emitting device assembly with emitter array, micro- or nano-structured lens, and angular filter
US11508888B2 (en) 2021-02-22 2022-11-22 Lumileds Llc Light-emitting device assembly with emitter array, micro- or nano-structured lens, and angular filter
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

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